BA33D18HFP-TL [ROHM]
Regulator, 2 Output, BIPolar,;
| 型号： | BA33D18HFP-TL |
| 厂家： | 
ROHM |
| 描述： | Regulator, 2 Output, BIPolar, 线性稳压器IC 调节器 电源电路 输出元件 |
| 文件： | 总9页 (文件大小：303K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Secondary LDO Regulators
Dual Output
Secondary Fixed Output LDO Regulators
No.11026EBT01
BA3258HFP, BA33D15HFP, BA33D18HFP
●Description
The BA3258HFP, BA33D15HFP, BA33D18HFP are fixed 2-output low-saturation regulators with a voltage accuracy at both
outputs of 2%. These series incorporate both overcurrent protection and thermal shutdown (TSD) circuits in order to
prevent damage due to output short-circuiting and overloading, respectively.
●Features
1) Output voltage accuracy: 2%.
2) Output current capacity: 1A (BA3258HFP), 0.5A (BA33D□□ Series)
3) A ceramic capacitor can be used to prevent output oscillation (BA3258HFP).
4) High Ripple Rejection (BA33D□□ Series)
5) Built-in thermal shutdown circuit
6) Built-in overcurrent protection circuit
●Applications
FPDs, TVs, PCs, DSPs in DVDs and CDs
●Product Lineup
Part Number
BA3258HFP
Output voltage
Vo1
Output voltage
Vo2
Current capability Current capability
Package
Io1
Io2
3.3 V
3.3 V
3.3 V
1.5 V
1.5 V
1.8 V
1 A
1 A
HRP5
HRP5
HRP5
BA33D15HFP
BA33D18HFP
0.5 A
0.5 A
0.5 A
0.5 A
●Absolute Maximum Ratings
BA3258HFP
BA33D□□ Series
Symbol
Ratings
Unit
V
Symbol
Ratings
18*1
Unit
Parameter
Applied voltage
Power dissipation
Parameter
VCC
Pd
15*1
Applied voltage
VCC
Pd
V
2300*2
mW
Power dissipation
2300*2
mW
Operating
temperature range
Operating
temperature range
Topr
Tstg
−30 to 85
−55 to 150
150
℃
℃
℃
Topr
Tstg
−25 to 105
−55 to 150
150
℃
℃
℃
Ambient storage
temperature
Ambient storage
temperature
Maximum junction
temperature
Maximum junction
temperature
Tjmax
Tjmax
*1 Must not exceed Pd
*2. Derated at 18.4 mW/℃ at Ta>25℃ when mounted on a glass epoxy board (70 mm 70 mm 1.6 mm)
●Recommended Operating Conditions
BA3258HFP
BA33D□□Series
Ratings
Min. Typ. Max.
Ratings
Min. Typ. Max.
Symbol
VCC
Unit
V
Symbol
VCC
Unit
V
Parameter
Parameter
Input power supply
voltage
Input power supply
voltage
4.75
-
14.0
4.1
-
16.0
3.3 V output current
1.5 V output current
Io1
Io2
-
-
-
-
1
1
A
A
3.3 V output current
1.5V output current
1.8 V output current
Io1
Io2
Io2
-
-
-
-
-
-
0.5
0.5
0.5
A
A
A
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© 2011 ROHM Co., Ltd. All rights reserved.
1/8
2011.03 - Rev.B
Technical Note
BA3258HFP,BA33D15HFP,BA33D18HFP
●Electrical Characteristics
BA3258HFP (Unless otherwise specified, Ta = 25℃, Vcc = 5 V)
Limits
Parameter
Symbol
IB
Unit
Conditions
Min. Typ. Max.
Bias current
-
3
5
mA Io1 = 0 mA, Io2 = 0 mA
[3.3 V Output Block]
Output voltage1
Vo1 3.234 3.300 3.366
V
V
A
Io1 = 50 mA
Minimum output voltage difference 1
Output current capacity 1
Ripple rejection 1
∆Vd1
Io1
-
1.0
46
-
1.1
1.3
-
Io1 = 1 A, Vcc = 3.8 V
-
52
R.R.1
Reg.I1
Reg.L1
Tcvo1
-
dB f=120 Hz,ein=0.5Vp-p,Io1=5mA
mV Vcc = 4.75→14 V, Io1 = 5 mA
mV Io1 = 5 mA→1A
Input stability 1
5
15
20
-
Load stability 1
Temperature coefficient of output voltage 1*3
-
5
-
%/℃ Io1 = 5 mA, Tj = 0℃ to 85℃
0.01
[1.5 V Output Block]
Output voltage 2
Vo2 1.470 1.500 1.530
V
A
Io2 = 50 mA
Output current capacity 2
Ripple rejection 2
Io2
1.0
-
52
-
-
R.R.2
Reg.I2
Reg.L2
Tcvo2
46
-
dB f=120 Hz,ein=0.5Vp-p,Io2=5mA
mV Vcc = 4.1→14 V, Io2 = 5 mA
mV Io2 = 5 mA→1 A
Input stability 2
5
15
20
-
Load stability 2
Temperature coefficient of output voltage 2*3
-
5
-
%/℃ Io2 = 5 mA, Tj = 0℃ to 125℃
0.01
*3: Design is guaranteed within these parameters. (No total shipment inspection is made.)
BA33D□□Series (Unless otherwise specified, Ta = 25℃, Vcc = 5 V)
Limits
Parameter
Symbol
Ib
Unit
Conditions
Min. Typ. Max.
Bias current
-
0.7
1.6
mA Io1 = 0 mA, Io2 = 0 mA
[3.3V Output Block]
Output voltage 1
Vo1 3.234 3.300 3.366
V
V
A
Io1 = 250 mA
Minimum output voltage difference 1
Output current capacity 1
Ripple rejection 1
∆Vd1
Io1
－
0.25 0.50
Io1 = 250 mA, Vcc = 3.135 V
0.5
-
68
-
-
R.R.1
Reg.I1
Reg.L1
Tcvo1
-
-
-
-
dB f=120 Hz,ein =1Vp-p,Io1=100mA
mV Vcc=4.1V→16V,Io1=250mA
mV Io1= 0 mA→0.5 A
Input stability 1
5
30
75
-
Load stability 1
30
Temperature coefficient of output voltage 1*3
BA33D15HFP Vo2 output
[1.5V Output Block]
0.01
%/℃ Io1 = 5 mA, Tj=0℃ to 125℃
Output voltage 2
Output current capacity 2
Ripple rejection 2
Input stability 2
Vo2 1.470 1.500 1.530
V
A
Io2 = 250 mA
Io2
0.5
-
74
-
-
R.R.2
Reg.I2
Reg.L2
Tcvo2
-
-
-
-
dB f=120 Hz,ein=1Vp-p,Io2=100mA
mV Vcc =4.1V→16 V,Io2=250mA
mV Io2 = 0 mA→0.5A
5
30
75
-
Load stability 2
Temperature coefficient of output voltage 2*3
30
%/℃ Io2 = 5 mA,Tj = 0℃ to 125℃
0.01
BA33D18HFP Vo2 output
[1.8V Output Block]
Output voltage 2
Vo2 1.764 1.800 1.836
V
A
Io2=250 mA
Output current capacity 2
Ripple rejection 2
Io2
0.5
-
72
-
-
R.R.2
Reg.I2
Reg.L2
Tcvo2
-
-
-
-
dB f =120Hz,ein =1Vp-p,Io2=100mA
mV Vcc = 4.1V→16V,Io2=250mA
mV Io2 = 0 mA→0.5 A
Input stability 2
5
30
75
-
Load stability 2
Temperature coefficient of output voltage 2*3
30
%/℃ Io2 = 5 mA, Tj = 0℃ to 125℃
0.01
*3: Design is guaranteed within these parameters. (No total shipment inspection is made.)
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© 2011 ROHM Co., Ltd. All rights reserved.
2/8
2011.03 - Rev.B
Technical Note
BA3258HFP,BA33D15HFP,BA33D18HFP
●BA3258HFP Electrical Characteristics Curves (Unless otherwise specified, Ta = 25℃, Vcc = 5V)
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
5
4
3
2
1
0
5
4
3
2
1
0
0
2
4
6
8
10
SUPPLY VOLTAGE Vcc V
［ ］
12
14
0.0
0.2
OUTPUT CURRENT Io1 A
［ ］
0.4
0.6
0.8
1.0
0.0
0.2
OUTPUT CURRENT Io2 A
［ ］
0.4
0.6
0.8
1.0
：
：
：
Fig. 2 Circuit Current vs Load Current Io2 Fig. 3 Circuit Current vs Load Current Io2
(Io1 = 0 1 A) (Io2 = 0 1 A)
Fig.1 Circuit Current
(with no load)
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
2
4
6
8
10
SUPPLY VOLTAGE Vcc V
［ ］
12
14
0.0
0.5
OUTPUT CURRENT Io1 A
［ ］
1.0
1.5
2.0
2.5
0
2
4
6
8
10
SUPPLY VOLTAGE Vcc V
［ ］
12
14
：
：
：
Fig. 6 Load Stability
(3.3 V output)
Fig. 4 Input Stability
(3.3 V output with no load)
Fig. 5 Input Stability
(1.5 V output with no load)
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
80
70
60
50
40
30
20
10
0
R.R.(1.5 V output)
R.R.(3.3 V output)
0.0
0.2
OUTPUT CURRENT Io1 A
［ ］
0.4
0.6
0.8
1.0
10
100
1000
： ［
10000
0.0
0.5
OUTPUT CURRENT Io2 A
［ ］
1.0
1.5
2.0
2.5
：
FREQUENCY f Hz
］
：
Fig. 7 Load Stability
Fig. 8 I/O Voltage Difference (3.3 V output)
Fig. 9 R.R. Characteristics
(ein = 0.5 Vp-p, Io = 5 mA)
(Vcc = 3.8 V, Io1 = 0 1 A)
1.506
1.504
1.502
1.500
1.498
1.496
1.494
1.492
1.490
3.325
3.315
3.305
3.295
3.285
3.275
3.265
3.255
3.245
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
-30 -15
0
15 30 45 60 75
-30 -15
0
15 30 45 60 75
-30 -15
0
15 30 45 60 75
TEMPERATURE Ta
：
［℃］
TEMPERATURE Ta
：
［℃］
TEMPERATURE Ta
：
［℃］
Fig. 12 Circuit Current vs Temperature
(Io = 0 mA)
Fig. 10 Output Voltage vs Temperature
(3.3 V output)
Fig. 11 Output Voltage vs Temperature
(1.5 V output)
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3/8
2011.03 - Rev.B
© 2011 ROHM Co., Ltd. All rights reserved.
Technical Note
BA3258HFP,BA33D15HFP,BA33D18HFP
●BA33D15HFP Electrical Characteristics Curves (Unless otherwise specified, Ta = 25℃, Vcc = 5V)
40
35
30
25
20
15
10
5
40
35
30
25
20
15
10
5
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
0
0
2
4
6
8
10 12 14 16 18
0.0
0.1
OUTPUT CURRENT Io1 A
［ ］
0.2
0.3
0.4
0.5
0.0
0.1
OUTPUT CURRENT Io2 A
［ ］
0.2
0.3
0.4
0.5
SUPPLY VOLTAGE Vcc V
：
［ ］
：
：
Fig. 15 Circuit Current vs Load Current Io2
Fig. 13 Circuit Current
(with no load)
Fig. 14 Circuit Current vs Load Current Io1
(Io2 = 0 500 mA)
(Io1 = 0 500 mA)
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
2
4
6
8
10 12 14 16 18
0
2
4
6
8
10 12 14 16 18
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
SUPPLY VOLTAGE Vcc V
SUPPLY VOLTAGE Vcc V
：
［
］
：
［ ］
OUTPUT CURRENT Io1 A
［ ］
：
Fig. 18 Load Stability
(3.3 V output)
Fig. 16 Input Stability
(3.3 V output, Io1 = 250 mA）
Fig. 17 Input Stability
(1.5 V output, Io2 = 250 mA)
80
70
60
50
40
30
20
10
0
1.6
0.5
0.4
0.3
0.2
0.1
0.0
Vo2(1.5V output)
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
Vo1(3.3V output)
100
1000
10000
0.0
0.1
OUTPUT CURRENT Io1 A
［ ］
0.2
0.3
0.4
0.5
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
OUTPUT CURRENT Io1 A
FREQUENCY f Hz
： ［
］
：
［ ］
：
Fig. 21 R.R. Characteristics
(ein = 1 Vp-p, Io = 100 mA)
Fig. 20 I/O Voltage Difference
(Vcc = 3.135 V, 3.3 V output)
Fig. 19 Load Stability
(1.5 V output)
3.45
3.40
3.35
3.30
3.25
3.20
3.15
1050
950
850
750
650
550
450
350
250
1.60
1.55
1.50
1.45
1.40
-25 -10
5
20 35 50 65 80 95
-25
-5
15
35
55
75
95
-25 -10
5
20 35 50 65 80 95
TEMPERATURE Ta
TEMPERATURE Ta
：
［℃］
：
［℃］
TEMPERATURE Ta
：
［℃］
Fig. 22 Output Voltage vs Temperature
(3.3 V output)
Fig. 23 Output Voltage vs Temperature
(1.5 V output)
Fig. 24 Circuit Current vs Temperature
(Io = 0 mA)
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© 2011 ROHM Co., Ltd. All rights reserved.
4/8
2011.03 - Rev.B
Technical Note
BA3258HFP,BA33D15HFP,BA33D18HFP
●Block Diagrams / Standard Example Application Circuits
BA3258HFP
VO1
5
Pin No.
Pin name
Vcc
Function
3.3V
Current
Limit
1
2
Power supply pin
CO1
V02_S
GND
Vo2
Output voltage monitor pin
GND pin
1μF
3
4
1.5 V output pin
3.3 V output pin
GND pin
VO2
4
1.5V
5
Vo1
Current
Limit
GND
3
CO2
FIN
GND
1μF
GND
Thermal
FIN
2
TOP VIEW
Shutdown
External capacitor
setting range
V02_S
Vcc
PIN
Vcc (1 Pin) Approximately 3.3µF
Vo1 (5 Pin) 1µF to 1000µF
Vo2 (4 Pin) 1µF to 1000µF
VIN
VREF
1
CIN
3.3μF
1
2
3
4
5
Fig.25 BA3258HFP Block Diagram
HRP5
BA33D□□Series
GND(Fin)
Vcc
Pin No.
Pin name
Vcc
Function
Power supply pin
N.C. pin
Vcc
1
2
Reference
Voltage
N.C.
Current
Limit
3
GND
Vo1
GND pin
Sat.
Prevention
4
3.3 V output pin
1.5 V/1.8 V output pin
GND pin
5
Vo2
FIN
GND
Vcc
Vcc
*The N.C. pin is not electrically connected internally
TOP VIEW
Thermal
Shut Down
Current
Limit
External capacitor
setting range
PIN
Sat.
Prevention
Vcc (1 Pin) Approximately 3.3µF
Vo1 (4 Pin) 10µF to 1000µF
Vo2 (5 Pin) 10µF to 1000µF
1
2
N.C.
3
4
5
1
2
3
4
5
Vcc
GND
Vo1
Vo2
Co
10μF
HRP5
Co
10μF
1μF
Fig.26 BA33D□□ Series Block Diagram
●Input / Output Equivalent Circuits
BA3258HFP
BA33D□□Series
Vcc
Vcc
Vcc
Vo1/Vo2
Vo2
Vo2_S
Vo1
Fig. 27 BA3258HFP Input / Output Equivalent Circuit
Fig. 28 BA33D□□Series Equivalent Circuit
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© 2011 ROHM Co., Ltd. All rights reserved.
5/8
2011.03 - Rev.B
Technical Note
BA3258HFP,BA33D15HFP,BA33D18HFP
●Thermal Design
If the IC is used under excessive power dissipation conditions, the chip temperature will rise, which will have an adverse
effect on the electrical characteristics of the IC, such as a reduction in current capability. Furthermore, if the temperature
exceeds Tjmax, element deterioration or damage may occur. Implement proper thermal designs to ensure that the power
dissipation is within the permissible range in order to prevent instantaneous IC damage resulting from heat and maintain the
reliability of the IC for long-term operation. Refer to the power derating characteristics curves in Fig. 29.
・Power Consumption (Pc) Calculation Method
*Vcc: Applied voltage
Vcc
IP
Vcc
Io1: Load current on Vo1 side
Io2: Load current on Vo2 side
3.3 V output
IO1
・Power consumption of 3.3V power transistor:
Pc1 = (Vcc − 3.3) Io1
・Power consumption of Vo2 power transistor:
Pc2 = (Vcc − Vo2) Io2
・Power consumption due to circuit current:
Pc3 = Vcc Icc
Power Tr
Power Tr
Vo1
Icc: Circuit current
Controller
Vcc
* The Icc (circuit current) varies with the load.
(See reference data in Figs. 2, 3, 14, and 15.)
IO2
Vo2
Icc
1.5 V output or
1.8 V output
GND
→Pc = Pc1 + Pc2 + Pc3
Refer to the above and implement proper thermal designs so that the IC will not be used under excessive power dissipation
conditions under the entire operating temperature range.
・Calculation example (BA33D15HFP)
Example: Vcc = 5V, Io1 = 200mA, and Io2 = 100mA
・Power consumption of 3.3V power transistor:
・Power consumption of 1.5V power transistor:
Pc1 = (Vcc − 3.3) Io1 = (5 − 3.3) 0.2 = 0.34W
Pc2 = (Vcc − 1.5) Io2 = (5 − 1.5) 0.2 = 0.35W
・Power consumption due to circuit current: Pc3 = Vcc Icc = 5 0.0085 = 0.0425 (W) (See Figs. 14 and 15)
Implement proper thermal designs taking into consideration the dissipation at full power consumption
(i.e., Pc1 + Pc2 + Pc3 = 0.34 + 0.35 + 0.0425 = 0.7325W).
●Explanation of External Components
○BA3258HFP
1) Pin 1 (Vcc pin)
Connecting a ceramic capacitor with a capacitance of approximately 3.3F between Vcc and GND as close to the pins
as possible is recommended.
2) Pins 4 and 5 (Vo pins)
Insert a capacitor between the Vo and GND pins in order to prevent output oscillation. The capacitor may oscillate if
the capacitance changes as a result of temperature fluctuations. Therefore, it is recommended that a ceramic
capacitor with a temperature coefficient of X5R or above and a maximum capacitance change (resulting from
temperature fluctuations) of 10% be used. The capacitance should be between 1F and 1,000µF. (Refer to Fig. 30)
○BA33D□□Series
1) Pin 1 (Vcc pin)
Insert a 1F capacitor between Vcc and GND. The capacitance will vary depending on the application. Check the
capacitance with the application set and implement designing with a sufficient margin.
2) Pins 4 and 5 (Vo pins)
Insert a capacitor between the Vo and GND pins in order to prevent oscillation. The capacitance may vary greatly with
temperature changes, thus making it impossible to completely prevent oscillation. Therefore, use a tantalum aluminum
electrolytic capacitor with a low ESR (Equivalent Serial Resistance). The output will oscillate if the ESR is too high or too
low, so refer to the ESR characteristcs in Fig. 31 and operate the IC within the stable operating region. If there is a
sudden load change, use a capacitor with higher capacitance. A capacitance between 10F and 1,000F is
recommended.
Board size: 70 mm 70 1.6 mm (with a thermal via incorporated by the board)
10
10.0
5.0
10.0
5.0
4.0
2.0
Board surface area: 10.5 mm 10.5 mm
Unstable region
9
8
(1) 2-layer board (Backside copper foil area: 15 mm 15mm)
(2) 2-layer board (Backside copper foil area: 70 mm 70 mm)
(3) 4-layer board (Backside copper foil area: 70 mm 70mm)
(3) 7.3 W
(2) 5.5 W
Unstable region
2.0
1.0
7
6
5
1.0
Stable region
0.5
0.2
0.5
0.2
0.15
0.1
4
3
2
1
0
Stable region
(1) 2.3 W
0.1
0.05
0.05
Unstable region
0.02
0.01
0.02
0.01
0
25
50
75
100 125 150
0
200
400 600
Io [mA]
800 1000
0
200
400 600
Io [mA]
800 1000
AMBIENT TEMPERATURE：Ta［℃］
Fig. 29 Thermal Derating Curves
Fig. 30 BA3258HFP ESR characteristics
Fig. 31 BA33D□□Series ESR
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© 2011 ROHM Co., Ltd. All rights reserved.
6/8
2011.03 - Rev.B
Technical Note
BA3258HFP,BA33D15HFP,BA33D18HFP
●Notes for use
1) Absolute maximum ratings
An excess in the absolute maximum ratings, such as supply voltage, temperature range of operating conditions, etc., can break
down the devices, thus making impossible to identify breaking mode, such as a short circuit or an open circuit. If any over rated
values will expect to exceed the absolute maximum ratings, consider adding circuit protection devices, such as fuses.
2) GND voltage
The potential of GND pin must be minimum potential in all operating conditions.
3) Thermal Design
Use a thermal design that allows for a sufficient margin in light of the power dissipation (Pd) in actual operating conditions.
4) Inter-pin shorts and mounting errors
Use caution when positioning the IC for mounting on printed circuit boards. The IC may be damaged if there is any
connection error or if pins are shorted together.
5) Actions in strong electromagnetic field
Use caution when using the IC in the presence of a strong electromagnetic field as doing so may cause the IC to malfunction.
6) Testing on application boards
When testing the IC on an application board, connecting a capacitor to a pin with low impedance subjects the IC to stress.
Always discharge capacitors after each process or step. Always turn the IC's power supply off before connecting it to or
removing it from a jig or fixture during the inspection process. Ground the IC during assembly steps as an antistatic
measure. Use similar precaution when transporting or storing the IC.
7) Regarding input pin of the IC
This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them isolated.
P-N junctions are formed at the intersection of these P layers with the N layers of other elements, creating a parasitic diode
or transistor. For example, the relation between each potential is as follows:
When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.
When GND > Pin B, the P-N junction operates as a parasitic transistor.
Parasitic diodes can occur inevitable in the structure of the IC. The operation of parasitic diodes can result in mutual
interference among circuits, operational faults, or physical damage. Accordingly, methods by which parasitic diodes
operate, such as applying a voltage that is lower than the GND (P substrate) voltage to an input pin, should not be used.
8) Ground Wiring Pattern
When using both small signal and large current GND patterns, it is recommended to isolate the two ground patterns,
placing a single ground point at the ground potential of application so that the pattern wiring resistance and voltage
variations caused by large currents do not cause variations in the small signal ground voltage. Be careful not to change the
GND wiring pattern of any external components, either.
9) Thermal Shutdown Circuit (TSD)
This IC incorporates a built-in thermal shutdown circuit for protection against thermal destruction. Should the junction
temperature (Tj) reach the thermal shutdown ON temperature threshold, the TSD will be activated, turning off all output
power elements. The circuit will automatically reset once the chip's temperature Tj drops below the threshold temperature.
Operation of the thermal shutdown circuit presumes that the IC's absolute maximum ratings have been exceeded.
Application designs should never make use of the thermal shutdown circuit.
10) Overcurrent protection circuit
An overcurrent protection circuit is incorporated in order to prevention destruction due to short-time overload currents. Continued
use of the protection circuits should be avoided. Please note that the current increases negatively impact the temperature.
11) Damage to the internal circuit or element may occur when the polarity of the Vcc pin is opposite to that of the other pins in
applications. (I.e. Vcc is shorted with the GND pin while an external capacitor is charged.) Use a maximum capacitance of
1000 mF for the output pins. Inserting a diode to prevent back-current flow in series with Vcc or bypass diodes between
Vcc and each pin is recommended.
Bypass diode
Resistor
Transistor (NPN)
(Pin B)
GND
B
Diode for preventing back current flow
C
（Pin A）
（Pin B）
C
E
E
B
VCC
GND
N
Output pin
P
P
P＋
P＋
P＋
P＋
Parasitic elements or
transistors
N
N
N
N
N
N
Ｎ
(Pin A)
P substrate
P
ara
si
tic
elements
x
Parasitic elements
GND
GND
GND
Fig32 Bypass diode
Fig. 33 Example of Simple Bipolar IC Architecture
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© 2011 ROHM Co., Ltd. All rights reserved.
7/8
2011.03 - Rev.B
Technical Note
BA3258HFP,BA33D15HFP,BA33D18HFP
●Ordering part number
B
A
3
5
2
8
H
F
P
-
T
R
Part No.
Part No.
3528
33D15
33D18
Package
HFP:HRP5
Packaging and forming specification
TR: Embossed tape and reel
(HRP5)
HRP5
<Tape and Reel information>
9.395 0.125
(MAX 9.745 include BURR)
Tape
Embossed carrier tape
2000pcs
8.82 0.1
(6.5)
1.905 0.1
Quantity
TR
Direction
of feed
The direction is the 1pin of product is at the upper right when you hold
reel on the left hand and you pull out the tape on the right hand
(
)
1pin
1
2
3
4
5
1.2575
+5.5°
4.5°
−4.5°
+0.1
0.27
−0.05
S
0.73 0.1
0.08
Direction of feed
Order quantity needs to be multiple of the minimum quantity.
1.72
S
Reel
(Unit : mm)
∗
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© 2011 ROHM Co., Ltd. All rights reserved.
8/8
2011.03 - Rev.B
Notice
N o t e s
No copying or reproduction of this document, in part or in whole, is permitted without the
consent of ROHM Co.,Ltd.
The content specified herein is subject to change for improvement without notice.
The content specified herein is for the purpose of introducing ROHM's products (hereinafter
"Products"). If you wish to use any such Product, please be sure to refer to the specifications,
which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specified in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.
The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
implicitly, any license to use or exercise intellectual property or other rights held by ROHM and
other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the
use of such technical information.
The Products specified in this document are intended to be used with general-use electronic
equipment or devices (such as audio visual equipment, office-automation equipment, commu-
nication devices, electronic appliances and amusement devices).
The Products specified in this document are not designed to be radiation tolerant.
While ROHM always makes efforts to enhance the quality and reliability of its Products, a
Product may fail or malfunction for a variety of reasons.
Please be sure to implement in your equipment using the Products safety measures to guard
against the possibility of physical injury, fire or any other damage caused in the event of the
failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM
shall bear no responsibility whatsoever for your use of any Product outside of the prescribed
scope or not in accordance with the instruction manual.
The Products are not designed or manufactured to be used with any equipment, device or
system which requires an extremely high level of reliability the failure or malfunction of which
may result in a direct threat to human life or create a risk of human injury (such as a medical
instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuel-
controller or other safety device). ROHM shall bear no responsibility in any way for use of any
of the Products for the above special purposes. If a Product is intended to be used for any
such special purpose, please contact a ROHM sales representative before purchasing.
If you intend to export or ship overseas any Product or technology specified herein that may
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Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact us.
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© 2011 ROHM Co., Ltd. All rights reserved.
R1120
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