BD00IA5MHFV-M [ROHM]
BD00IA5MHFV-M是可提供0.5A输出电流的稳压器。输出精度为Ta＝-40°C～+105°C下±3%。可使用外接电阻在0.8V～4.5V范围内任意设置输出电压。封装组件采用小型且散热性优良的HVSOF6。本机型内置用于防止因输出短路等发生IC破坏的过流保护电路、关断时使电路电流为0μA的ON/OFF开关、以及防止因过负荷状态等使IC发生热破坏的温度保护电路。另外，采用了陶瓷电容器，有助于整机的小型化和长寿化。;
| 型号： | BD00IA5MHFV-M |
| 厂家： | 
ROHM |
| 描述： | BD00IA5MHFV-M是可提供0.5A输出电流的稳压器。输出精度为Ta＝-40°C～+105°C下±3%。可使用外接电阻在0.8V～4.5V范围内任意设置输出电压。封装组件采用小型且散热性优良的HVSOF6。本机型内置用于防止因输出短路等发生IC破坏的过流保护电路、关断时使电路电流为0μA的ON/OFF开关、以及防止因过负荷状态等使IC发生热破坏的温度保护电路。另外，采用了陶瓷电容器，有助于整机的小型化和长寿化。 开关 电容器 陶瓷电容器 稳压器 |
| 文件： | 总30页 (文件大小：2526K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Datasheet
Automotive 0.5A Variable Output
LDO Regulator
BD00IA5MHFV-M
General Description
Key Specifications
Input Power Supply Voltage Range:
Output Voltage Range(Variable type): 0.8V to 4.5V
BD00IA5MHFV-M is a LDO regulator with output
current 0.5A. The output accuracy is ±3% between
Ta=-40°C to +105°C. The variable output voltage can
be varied from 0.8V to 4.5V using external resistors. It
has package type: HVSOF6 which is small and good
heat resistance. Over current protection (for protecting
the IC destruction by output short circuit), circuit
current ON/OFF switch (for setting the circuit 0μA at
shutdown mode), and thermal shutdown circuit (for
protecting IC from heat destruction by over load
condition) are all built in. It is usable for ceramic
capacitor and enables to improve smaller set and
long-life.
2.4V to 5.5V
Output Current:
0.5A (Max)
Shutdown Current:
0μA(Typ)
Ambient Temperature Range Ta: -40°C to +105°C
Package
W(Typ) x D(Typ) x H(Max)
1.60mm x 3.00mm x 0.75mm
HVSOF6
Features
AEC-Q100 Qualified(Note 1)
High Accuracy Reference Voltage Circuit
Built-in Over Current Protection Circuit (OCP)
Built-in Thermal Shut Down Circuit (TSD)
With Shutdown Switch
(Note 1) Grade2
Application
Automotive (Body)
Typical Application Circuit
VCC
EN
VO
FB
COUT
CIN
R1
R2
GND EXP-PAD
CIN,COUT : Ceramic Capacitor
Figure 1. Application Circuit
〇Product structure : Silicon monolithic integrated circuit 〇This product has no designed protection against radioactive rays
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BD00IA5MHFV-M
Contents
General Description......................................................................................................................................................................1
Features.........................................................................................................................................................................................1
Key Specifications........................................................................................................................................................................1
Package
W(Typ) x D(Typ) x H(Max) .......................................................................................................................................1
Typical Application Circuit...........................................................................................................................................................1
Contents ........................................................................................................................................................................................2
Pin Configuration..........................................................................................................................................................................3
Pin Description .............................................................................................................................................................................3
Block Diagram...............................................................................................................................................................................3
Absolute Maximum Ratings.........................................................................................................................................................4
Operating Conditions...................................................................................................................................................................4
Electrical Characteristics.............................................................................................................................................................4
Thermal Resistance(Note 1) .............................................................................................................................................................5
Typical Performance Curves........................................................................................................................................................6
Power Dissipation.......................................................................................................................................................................15
Thermal Design...........................................................................................................................................................................16
Input-to-Output Capacitor..........................................................................................................................................................18
I/O Equivalent circuits ................................................................................................................................................................19
Linear Regulators Surge Voltage Protection............................................................................................................................20
Applying Positive Surge to the Input.....................................................................................................................................20
Applying Negative Surge to the input ...................................................................................................................................20
Linear Regulators Reverse Voltage Protection ........................................................................................................................20
Reverse Input /Output Voltage ...............................................................................................................................................20
Protection against Input Reverse Voltage.............................................................................................................................21
Protection against Output Reverse Voltage when Output Connect to an Inductor...........................................................22
Operational Notes.......................................................................................................................................................................23
1.
2.
3.
4.
5.
6.
7.
8.
Reverse Connection of Power Supply........................................................................................................................23
Power Supply Lines .....................................................................................................................................................23
Ground Voltage.............................................................................................................................................................23
Ground Wiring Pattern.................................................................................................................................................23
Operating Conditions...................................................................................................................................................23
Inrush Current...............................................................................................................................................................23
Testing on Application Boards....................................................................................................................................23
Inter-pin Short and Mounting Errors...........................................................................................................................23
Unused Input Pins........................................................................................................................................................23
Regarding the Input Pin of the IC................................................................................................................................24
Ceramic Capacitor........................................................................................................................................................24
Thermal Shutdown Circuit(TSD) .................................................................................................................................24
Over Current Protection Circuit (OCP) .......................................................................................................................24
9.
10.
11.
12.
13.
Ordering Information..................................................................................................................................................................25
Marking Diagram.........................................................................................................................................................................25
Physical Dimension and Packing Information .........................................................................................................................26
Revision History .........................................................................................................................................................................27
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BD00IA5MHFV-M
Pin Configuration
1
2
3
6
5
4
VO
FB
VCC
N.C
EN
EXP-PAD
GND
Figure 2. HVSOF6 (TOP VIEW)
Pin Description
Pin No.
Pin name
Pin Function
1
VO
FB
Output pin
2
Feedback pin
GND pin
3
GND
4
EN
Enable pin
5
6
N.C(Note 1)
Non Connection (Used to connect GND or OPEN state.)
VCC
Input pin
Reverse
EXP-PAD
GND
(Note 1) N.C. pin can be opened because it isn’t connected it inside of IC.
Block Diagram
(Vo+VDROP) to 5.5V
VCC
5
6
N.C
EN
Ceramic
1.0µF
Capacitor
OCP
Body
Diode
SOFT
START
-
-
+
EN
4
3
0.8V to 4.5V
VO
FB
1
2
VREF
R1
TSD
GND
R2
Ceramic
1.0µF
Capacitor
Figure 3. Block Diagram
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BD00IA5MHFV-M
Absolute Maximum Ratings
Parameter
Symbol
VCC
Limits
-0.3 to +7.0 (Note 1)
-0.3 to +7.0
-55 to +150
+150
Unit
V
Power Supply Voltage
EN Voltage
VEN
V
Storage Temperature Range
Tstg
°C
Maximum Junction Temperature
Tjmax
°C
Caution 1:Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit
between pins or an open circuit between pins and the internal circuitry. Therefore, it is important to consider circuit
protection measures, such as adding a fuse, in case the IC is operated over the absolute maximum ratings.
Caution 2:Should by any chance the maximum junction temperature rating be exceeded the rise in temperature of the chip may
result in deterioration of the properties of the chip. In case of exceeding this absolute maximum rating, design a PCB
boards with thermal resistance and power dissipation taken into consideration by increasing board size and copper
area so as not to exceed the maximum junction temperature rating.
(Note 1) Not to exceed Tjmax
Operating Conditions
Parameter
Input Power Supply Voltage
Operating Temperature
EN Voltage
Symbol
VCC
Ta
Min
2.4
Max
5.5
+105
5.5
4.5
0.5
-
Unit
V
-40
°C
V
VEN
VO
0.0
Output Voltage Setting Range
Output Current
0.8
V
IO
0.0
1.0(Note 2)
A
Input Capacitor
CIN
µF
Output Capacitor
COUT
1.0(Note 2)
-
µF
(Note 2) Set the value of the capacitor so that it does not fall below the minimum value.
Take into consideration the temperature characteristics, DC device characteristics and degradation with time.
Electrical Characteristics
(Unless otherwise noted, Ta=-40°C to +105°C, EN=3V, VCC=3.3V, R1=16kΩ, R2=7.5kΩ)
Parameter
Circuit Current
Symbol
Min
Typ
Max
Unit
Conditions
ISD
-
0
5
μA
EN=0V, OFF mode
at Shutdown Mode
Bias Current
ICC
-
250
700
+1.0
+1.5
0.70
μA
%
%
V
Line Regulation
Reg.I
Reg.IO
VDROP
-1.0
-1.5
-
-
-
VCC =( Vo+0.6V ) to 5.5V
IO=0 to 500mA
Load Regulation
0.40
VCC =3.3V, IO =500mA
Minimum Dropout Voltage
Output Reference Voltage
(Variable type)
VFB
0.776
0.800
0.824
V
IO=0mA
EN Low Voltage
EN High Voltage
EN Bias Current
VEN(Low)
VEN(High)
IEN
0
2.4
-
-
-
0.8
5.5
9
V
V
3
µA
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BD00IA5MHFV-M
Thermal Resistance(Note 1)
Thermal Resistance (Typ)
Parameter
Symbol
Unit
1s(Note 3)
2s2p(Note 4)
HVSOF6
Junction to Ambient
Junction to Top Characterization Parameter(Note 2)
θJA
283.8
35
65.2
16
°C/W
°C/W
ΨJT
(Note 1) Based on JESD51-2A(Still-Air).
(Note 2) The thermal characterization parameter to report the difference between junction temperature and the temperature at the top center of the outside
surface of the component package.
(Note 3) Using a PCB board based on JESD51-3.
(Note 4) Using a PCB board based on JESD51-5, 7.
Layer Number of
Measurement Board
Material
FR-4
Board Size
Single
114.3 mm x 76.2 mm x 1.57 mmt
Top
Copper Pattern
Thickness
Footprints and Traces
70 μm
Thermal Via(Note 5)
Layer Number of
Measurement Board
Material
FR-4
Board Size
114.3 mm x 76.2 mm x 1.6 mmt
2 Internal Layers
Pitch
Diameter
4 Layers
1.20 mm
Φ0.30 mm
Top
Copper Pattern
Bottom
Thickness
Copper Pattern
Thickness
Copper Pattern
Thickness
Footprints and Traces
70 μm
74.2 mm x 74.2 mm
35 μm
74.2 mm x 74.2 mm
70 μm
(Note 5) This thermal via connects with the copper pattern of all layers.
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BD00IA5MHFV-M
Typical Performance Curves
(Unless otherwise noted, EN=3V, VCC=3.3V, R1=16kΩ, R2=7.5kΩ)
VO(AC)
500mV/div
VO(AC)
500mV/div
IO(DC)
200mA/div
IO(DC)
200mA/div
10.0μs/div
10.0μs/div
Figure 4. Transient Response
(Io:1mA to 500mA)
Figure 5. Transient Response
(Io:1mA to 500mA)
(CIN=COUT=1µF, Ta=-40°C)
(CIN=COUT=1µF, Ta=+25°C)
VO(AC)
500mV/div
VO(AC)
500mV/div
IO(DC)
200mA/div
IO(DC)
200mA/div
10.0μs/div
200μs/div
Figure 6. Transient Response
(Io:1mA to 500mA)
Figure 7. Transient Response
(Io:500mA to 1mA)
(CIN=COUT=1µF, Ta=+105°C)
(CIN=COUT=1µF, Ta=-40°C)
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Typical Performance Curves - continued
VO(AC)
500mV/div
VO(AC)
500mV/div
IO(DC)
IO(DC)
200mA/div
200mA/div
200µs/div
200μs/div
Figure 8. Transient Response
(Io:500mA to 1mA)
Figure 9. Transient Response
(Io:500mA to 1mA)
(CIN=COUT=1µF, Ta=+25°C)
(CIN=COUT=1µF, Ta=+105°C)
VEN(DC)
2V/div
VEN(DC)
2V/div
VCC(DC)
2V/div
VCC(DC)
2V/div
VO(DC)
2V/div
VO(DC)
2V/div
400μs/div
400μs/div
Figure 10. Input sequence 1
(Vcc:0V to 3.3V)
Figure 11. Input sequence 1
(Vcc:0V to 3.3V)
(CIN=COUT=1µF, Ta=-40°C, tr=30µs)
(CIN=COUT =1µF, Ta=+25°C, tr=30µs)
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Typical Performance Curves - continued
VEN(DC)
2V/div
VEN(DC)
2V/div
VCC(DC)
2V/div
VCC(DC)
2V/div
VO(DC)
2V/div
VO(DC)
2V/div
400μs/div
100μs/div
Figure 12. Input sequence 1
(Vcc:0V to 3.3V)
Figure 13. OFF sequence 1
(Vcc:3.3V to 0V)
(CIN=COUT =1µF, Ta=+105°C, tr=30µs)
(CIN=COUT =1µF, Ta=-40°C, tf=30µs)
VEN(DC)
VEN(DC)
2V/div
2V/div
VCC(DC)
2V/div
VCC(DC)
2V/div
VO(DC)
2V/div
VO(DC)
2V/div
100μs/div
Figure 14. OFF sequence 1
100μs/div
Figure 15. OFF sequence 1
(Vcc:3.3V to 0V)
(Vcc:3.3V to 0V)
(CIN=COUT =1µF, Ta=+25°C, tf=30µs)
(CIN=COUT =1µF, Ta=+150°C, tf=30µs)
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Typical Performance Curves - continued
VEN(DC)
2V/div
VEN(DC)
2V/div
VCC(DC)
2V/div
VCC(DC)
2V/div
VO(DC)
2V/div
VO(DC)
2V/div
400μs/div
400μs/div
Figure 16. Input sequence 2
(EN:0V to 3V)
Figure 17. Input sequence 2
(EN:0V to 3V)
(CIN=COUT =1µF, Ta=-40°C, tr=20µs)
(CIN=COUT =1µF, Ta=+25°C, tr=20µs)
VEN(DC)
2V/div
VEN(DC)
2V/div
VCC(DC)
2V/div
VCC(DC)
2V/div
VO(DC)
2V/div
VO(DC)
2V/div
400μs/div
20.0ms/div
Figure 18. Input sequence 2
(EN:0V to 3V)
Figure 19. OFF sequence 2
(EN:3V to 0V)
(CIN=COUT =1µF, Ta=+125°C, tr=20µs)
(CIN=COUT =1µF, Ta=-40°C, tf=20µs)
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Typical Performance Curves - continued
VEN(DC)
2V/div
VEN(DC)
2V/div
VCC(DC)
2V/div
VCC(DC)
2V/div
VO(DC)
2V/div
VO(DC)
2V/div
20.0ms/div
20.0ms/div
Figure 20. OFF sequence 2
(EN:3V to 0V)
(CIN=COUT =1µF, Ta=+25°C, tf=20µs)
Figure 21. OFF sequence 2
(EN:3V to 0V)
(CIN=COUT =1µF, Ta=+105°C, tf=20µs)
700
600
500
400
300
200
100
0
2.575
2.565
2.555
2.545
2.535
2.525
2.515
2.505
2.495
2.485
2.475
2.465
2.455
2.445
2.435
2.425
-40
-20
0
20
40
60
80
100
-40
-20
0
20
40
Ta[°C]
Figure 23. ICC vs Ta
60
80
100
Ta[℃]
Figure 22. VO vs Ta
(IO=0mA)
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Typical Performance Curves - continued
Figure 24. ISD vs Ta
(VEN=0V)
Figure 25. IEN vs Ta
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
2.610
Ta=+25°C
2.595
2.580
2.565
2.550
2.535
2.520
2.505
2.490
2.475
2.460
2.445
2.430
2.415
2.400
2.385
Ta=+25℃
Ta=-40°C
Ta=-40℃
Ta=+105°C
Ta=+105℃
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
0
0.1
0.2
0.3
0.4
0.5
VCC[V]
Io[A]
Figure 26. VO vs IO
Figure 27. ISD vs VCC
(VEN=0V)
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Typical Performance Curves - continued
3.0
2.5
2.0
1.5
1.0
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Ta=+25℃
0.5
0.0
Ta=-40℃
Ta=+105℃
100
120
140
160
180
200
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
Vcc[V]
Ta[℃]
Figure 29. VO vs Ta
TSD (IO=0mA)
Figure 28. VO vs VCC
(Io=0mA)
0.7
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.6
0.5
0.4
0.3
0.2
0.1
0
Ta=+25℃
Ta=-40℃
Ta=+105℃
-40
-20
0
20
40
Ta[°C]
60
80
100
0
0.2
0.4
0.6
0.8
1
Io[A]
Figure 30. VO vs IO
Figure 31. VDROP vs Ta
(VCC=3.3V, IO=0.5A, VFB=0V)
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Typical Performance Curves - continued
10.00
1.00
700
600
500
400
300
200
100
0
Ta=+25℃
Ta=-40℃
Ta=+105℃
0.10
Safety Area
0.01
0.00
0
0.2
0.4
0.6
0.8
1
0
0.2
0.4
0.6
0.8
1
Io[A]
Io[A]
Figure 32. ESR vs IO
Figure 33. ICC vs IO
(Operation Safety area)
(-40 °C ≤ Ta ≤ +105 °C)
(2.4V ≤ VCC ≤ 5.5V, CIN=COUT=1µF)
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
80
60
40
20
0
Ta=+25℃
Ta=-40℃
Ta=+105℃
Ta=+25℃
Ta=-40℃
Ta=+105℃
-20
-40
0
0.1
0.2
0.3
0.4
0.5
100
1000
10000
100000 1000000 10000000
Io[A]
Frequency[Hz]
Figure 34. PSRR vs Frequency
(ein=50mVpp、IO=100mA、COUT=1µF)
Figure 35. VDROP vs Io
(VCC=2.4V, VFB=0V)
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Typical Performance Curves - continued
0.7
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
Ta=+25℃
Ta=+25℃
0.6
0.5
0.4
0.3
0.2
0.1
0.0
Ta=-40℃
Ta=-40℃
Ta=+105℃
Ta=+105℃
0
0.1
0.2
0.3
0.4
0.5
0
0.1
0.2
0.3
0.4
0.5
Io[A]
Io[A]
Figure 36. VDROP vs Io
(VCC=3.3V, VFB=0V)
Figure 37. VDROP vs Io
(VCC=4V, VFB=0V)
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
Ta=+25℃
Ta=-40℃
Ta=+105℃
0
0.1
0.2
0.3
0.4
0.5
Io[A]
Figure 38. VDROP vs Io
(VCC=5.5V, VFB=0V)
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BD00IA5MHFV-M
Power Dissipation
■HVSOF6
IC mounted on ROHM standard board based on JEDEC.
1 : 1-layer PCB
(Copper foil area on the reverse side of PCB: 0mm × 0mm)
Board material: FR4
2.5
Board size: 114.3mm × 76.2mm × 1.57mmt
Mount condition: PCB and exposed pad are soldered.
Top copper foil: ROHM recommended footprint
+ wiring to measure, 2 oz. copper.
2: 1.91W
2
2 : 4-layer PCB
1.5
1
(Copper foil area on the reverse side of PCB: 74.2mm × 74.2mm)
Board material: FR4
Board size: 114.3mm × 76.2mm × 1.60mmt
Mount condition: PCB and exposed pad are soldered.
Top copper foil: ROHM recommended footprint
+ wiring to measure, 2 oz. copper.
1: 0.44W
0.5
2 inner layers copper foil area of PCB:
74.2mm × 74.2mm, 1 oz. copper.
Copper foil area on the reverse side of PCB:
74.2mm × 74.2mm, 2 oz. copper.
0
0
25
50
75
100
125
150
Condition 1 : θJA = 283.8 °C/W, ΨJT (top center) = 35°C/W
Condition 2 : θJA = 65.2°C/W, ΨJT (top center) = 16°C/W
Ambient Temperature: Ta[°C]
Figure 39. HVSOF6 Power Dissipation Graph
(Reference Data)
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Thermal Design
Within this product, the power consumption is decided by the dropout voltage condition, the load current and the circuit
current. Refer to Package Data illustrated in Figure 39 when using the IC in an environment of Ta ≥ 25 °C. Even if the
ambient temperature Ta is at 25 °C, depending on the input voltage and the load current, chip junction temperature can be
very high. Consider the design to be Tj ≤ Tjmax = 150 °C in all possible operating temperature range. On the reverse side
of the package (HVSOF6) there is exposed heat pad for improving the heat dissipation.
Should by any condition the maximum junction temperature Tjmax = 150 °C rating be exceeded by the temperature
increase of the chip, it may result in deterioration of the properties of the chip. The thermal impedance in this specification is
based on recommended PCB and measurement condition by JEDEC standard. Verify the application and allow sufficient
margins in the thermal design by the following method is used to calculate the junction temperature Tj.
Tj can be calculated by either of the two following methods.
1.
The following method is used to calculate the Tj: Junction Temperature from Ta: Ambient Temperature.
Tj = Ta + PC × θJA
Where:
Tj
: Junction Temperature
: Ambient Temperature
: Power Consumption
Ta
PC
θJA
: Thermal Impedance
(Junction to Ambient)
2.
The following method is also used to calculate the Tj: Junction Temperature from TT: top Center of Case’s (mold)
Temperature.
Tj = TT + PC × ΨJT
Where:
Tj
TT
PC
: Junction Temperature
: Top Center of Case’s (mold) Temperature
: Power consumption
ΨJT
: Thermal Impedance
(Junction to Top Center of Case)
The following method is used to calculate the power consumption Pc (W) from input and output voltage, output current
and circuit current.
Pc = (VCC - VO) × IO + VCC × ICC
Where:
PC
VCC
VO
IO
: Power Consumption
: Input Voltage
: Output Voltage
: Output Current
: Circuit Current
ICC
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Thermal Design – continued
If VCC = 5.0 V, VO = 3.3 V, IO = 0.1 A, ICC = 250 μA, the power consumption Pc can be calculated as follows:
PC = (VCC - VO) × IO + VCC × ICC
= (5.0 V – 3.3 V) × 0.1 A + 5.0 V × 250 μA
= 0.17125 W
At the ambient temperature Tamax = 105°C, the thermal Impedance (Junction to Ambient) θJA = 65.2 °C / W ( 4-layer PCB ),
Tj = Tamax + PC × θJA
= 105 °C + 0.17125 W × 65.2 °C / W
= 116.2 °C
When operating the IC, the top center of case’s (mold) temperature TT = 100 °C, ΨJT = 16 °C / W (4-layer PCB),
Tj = TT + PC × ΨJT
= 100 °C + 0.17125 W × 16 °C / W
= 102.7 °C
For optimum thermal performance, it is recommended to expand the copper foil area of the board, increasing the layer and
thermal via between thermal land pad.
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Input-to-Output Capacitor
It is recommended that a capacitor is placed nearby pin between Input pin and GND, output pin and GND.
A capacitor, between input pin and GND, is valid when the power supply impedance is high or drawing is long. Also as for a
capacitor, between output pin and GND, the greater the capacity, more sustainable the line regulation and it makes
improvement of characteristics by load change. However, check by mounted on a board for the actual application. Ceramic
capacitor usually has difference, thermal characteristics and series bias characteristics, and moreover capacity decreases
gradually by using conditions.
For more detail, be sure to inquire the manufacturer, and select the best ceramic capacitor.
Equivalent Series Resistance ESR
10.00
1.00
0.10
0.01
0.00
In order to prevent oscillation, a capacitor needs to be placed
between the output pin and GND. Generally, Capacitor has ESR
(Equivalent Series Resistance). This product works stable in a
specific ESR area.
Refer to ESR vs IO characteristics data regarding safety area.
This reference measurement data condition is output ceramic
capacitor (1.0µF) connected resistor in series.
Generally, there is difference in ESR value among electrolytic,
tantalum and ceramic capacitors. It recommends confirming
ESR value is in safety area of ESR vs IO characteristics graph.
Safety Area
Provided however, the stable domain of this graph is based on
the measurement result from single IC on our board with
resistive load. In the actual environment, stability is affected by
wire impedance on the board, input power supply impedance
and load impedance, therefore it is strongly recommended
thorough verification in the actual usage environment.
0
0.2
0.4
0.6
0.8
1
Io[A]
Figure 40. ESR vs IO characteristics
(-40 °C ≤ Ta ≤ +105 °C)
(2.4V ≤ VCC ≤ 5.5V, CIN=COUT=1µF)
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I/O Equivalent circuits
Pin6(VCC) / Pin1(VO)
Pin6(VCC)
Pin2(FB)
Pin4(EN)
Pin2(FB)
2kΩ(Typ)
Pin4(EN)
520kΩ(Typ)
Pin1(VO)
480kΩ(Typ)
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Linear Regulators Surge Voltage Protection
In the following, it explains the protection method for ICs when surge exceed absolute maximum ratings is applied to the
input.
Applying Positive Surge to the Input
If the positive surge that exceeds absolute maximum ratings 7 V is applied to the input, a Zener Diode should be
placed to protect the device in between the IN and the GND as shown in the figure 41.
IN
OUT
VIN
VOUT
COUT
GND
D1
CIN
Figure 41. Surges Higher than 7 V is Applied to the Input
Applying Negative Surge to the input
If the negative surge that exceeds absolute maximum ratings -0.3V is applied to the input, a Schottky Diode should be
place to protect the device in between the IN and the GND as shown in the figure 42.
IN
OUT
VIN
VOUT
COUT
GND
D1
CIN
Figure 42. Surges Lower than -0.3 V is Applied to the Input
Linear Regulators Reverse Voltage Protection
A linear regulator integrated circuit (IC) requires that the input voltage is always higher than the output voltage. Output
voltage, however, may become higher than the input voltage under specific situations or circuit configurations, and that
reverse voltage and current may cause damage to the IC. A reverse polarity connection or certain inductor components can
also cause a polarity reversal between the input and output pins. In the following, it explains the protection method for ICs
when a condition of voltage reverses.
Reverse Input /Output Voltage
In a MOS linear regulator, a body diode exists as a parasitic element in the drain-source junction portion of its power
MOSFET. Reverse input/output voltage triggers the current flow from the output to the input through the body diode.
The inverted current may damage or destroy the semiconductor elements of the regulator since the effect of the
parasitic body diode is not guaranteed the operation (Figure 43).
IR
VOUT
VIN
Error
AMP.
VREF
Figure 43. Reverse Current Path in a MOS Linear Regulator
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Reverse Input /Output Voltage -continued
An effective solution to this is to connect an external bypass diode connected in-between the input and output to
prevent the reverse current from flowing inside the IC (see Figure 44). Note that the bypass diode must be turned on
before the internal circuit of the IC. Bypass diodes in the internal circuits of MOS linear regulators must have low
forward voltage VF. When the reverse current from this bypass diode is large, leakage current of the diode flows a lot
from the input to the output even if it turns off the output with IC the shutdown function; therefore, it is necessary to
choose one that has a small reverse current. Specifically, select a diode with a rated reverse voltage greater than the
input to output voltage differential and rated forward current greater than the reverse current.
D1
IN
OUT
VIN
VOUT
COUT
GND
CIN
Figure 44. Bypass Diode for Reverse Current Diversion
The lower forward voltage (VF) of Schottky barrier diodes cater to requirements of MOS linear regulators, however the
main drawback is that their reverse current (IR), which is relatively high. So, one with a low reverse current is
recommended when choosing a Schottky diode. The VR-IR characteristics versus temperatures show increases at
higher temperatures. It is recommended that confirming the datasheet for Schottky barrier diodes.
If VIN is open in a circuit as shown in the following Figure 45 with its input/output voltage being reversed, the only
current that flows in the reverse current path is the bias current of the IC. Because the amperage is too low to damage
or destroy the parasitic element, a reverse current bypass diode is not required for this type of circuit.
ON→OFF
IBIAS
IN
OUT
VOUT
COUT
VIN
GND
CIN
Figure 45. Open VIN
Protection against Input Reverse Voltage
Accidental reverse polarity at the input connection flows a large current to the diode for electrostatic breakdown
protection between the input pin of the IC and the GND pin, which may destroy the IC (see Figure 46).
A Schottky barrier diode or rectifier diode connected in series with the power supply as shown in Figure 47 is the
simplest solution to prevent this from happening. There is a power loss calculated as VF x IOUT, as the forward voltage
VF of the diode drops in a correct connection. The lower VF of a Schottky barrier diode than that of a rectifier diode
gives a slightly smaller power loss. Because diodes generate heat, select a diode that has enough allowance in power
dissipation. A reverse connection allows a negligible reverse current to flow in the diode.
VIN
VOUT
COUT
GND
IN
OUT
D1
-
IN
OUT
VOUT
COUT
VIN
GND
CIN
GND
CIN
+
GND
Figure 46. Current Path in Reverse Input Connection
Figure 47. Protection against Reverse Polarity 1
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Protection against Input Reverse Voltage -continued
Figure 48 shows a circuit in which a P-channel MOSFET is connected in series with the power. The diode located in
the drain-source junction portion of the MOSFET is a body diode (parasitic element). The voltage drop in a correct
connection is calculated by multiplying the resistance of the MOSFET being turned on by the output current IOUT
,
therefore it is smaller than the voltage drop by the diode (see Figure 48) and results in less of a power loss. No current
flows in a reverse connection where the MOSFET remains off.
If the voltage taking account of derating is greater than the voltage rating of MOSFET gate-source junction, lower the
gate-source junction voltage by connecting voltage dividing resistors as shown in Figure 49.
Q1
VIN
Q1
VOUT
IN
OUT
IN
OUT
VIN
VOUT
COUT
R1
GND
GND
R2
CIN
COUT
CIN
Figure 48. Protection against Reverse Polarity 2
Figure 49. Protection against Reverse Polarity 3
Protection against Output Reverse Voltage when Output Connect to an Inductor
If the output load is inductive, electrical energy accumulated in the inductive load is released to the ground upon
the output voltage turning off. In-between the IC output and ground pin is a diode for preventing electrostatic
breakdown, in which a large current flows that could destroy the IC. To prevent this from happening, connect a
Schottky barrier diode in parallel with the diode (see Figure 50).
Further, if a long wire is in use for the connection between the output pin of the IC and the load, observe the waveform
on an oscilloscope, since it is possible that the load becomes inductive. An additional diode is needed for a motor load
because a similar electric current flows by its counter electromotive force.
VOUT
VIN
OUT
IN
GND
D1
CIN
XLL
COUT
GND
GND
Figure 50. Current Path in Inductive Load (Output: Off)
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Operational Notes
1.
2.
Reverse Connection of Power Supply
Connecting the power supply in reverse polarity can damage the IC. Take precautions against reverse polarity when
connecting the power supply, such as mounting an external diode between the power supply and the IC’s power
supply pins.
Power Supply Lines
Design the PCB layout pattern to provide low impedance supply lines. Furthermore, connect a capacitor to ground at
all power supply pins. Consider the effect of temperature and aging on the capacitance value when using electrolytic
capacitors.
3.
4.
Ground Voltage
Ensure that no pins are at a voltage below that of the ground pin at any time, even during transient condition.
Ground Wiring Pattern
When using both small-signal and large-current ground traces, the two ground traces should be routed separately but
connected to a single ground at the reference point of the application board to avoid fluctuations in the small-signal
ground caused by large currents. Also ensure that the ground traces of external components do not cause variations
on the ground voltage. The ground lines must be as short and thick as possible to reduce line impedance.
5.
6.
Operating Conditions
The function and operation of the IC are guaranteed within the range specified by the operating conditions. The
characteristic values are guaranteed only under the conditions of each item specified by the electrical characteristics.
Inrush Current
When power is first supplied to the IC, it is possible that the internal logic may be unstable and inrush current may
flow instantaneously due to the internal powering sequence and delays, especially if the IC has more than one power
supply. Therefore, give special consideration to power coupling capacitance, power wiring, width of ground wiring,
and routing of connections.
7.
Testing on Application Boards
When testing the IC on an application board, connecting a capacitor directly to a low-impedance output pin may
subject the IC to stress. Always discharge capacitors completely after each process or step. The IC’s power supply
should always be turned off completely before connecting or removing it from the test setup during the inspection
process. To prevent damage from static discharge, ground the IC during assembly and use similar precautions during
transport and storage.
8.
9.
Inter-pin Short and Mounting Errors
Ensure that the direction and position are correct when mounting the IC on the PCB. Incorrect mounting may result in
damaging the IC. Avoid nearby pins being shorted to each other especially to ground, power supply and output pin.
Inter-pin shorts could be due to many reasons such as metal particles, water droplets (in very humid environment)
and unintentional solder bridge deposited in between pins during assembly to name a few.
Unused Input Pins
Input pins of an IC are often connected to the gate of a MOS transistor. The gate has extremely high impedance and
extremely low capacitance. If left unconnected, the electric field from the outside can easily charge it. The small
charge acquired in this way is enough to produce a significant effect on the conduction through the transistor and
cause unexpected operation of the IC. So unless otherwise specified, unused input pins should be connected to the
power supply or ground line.
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Operational Notes – continued
10. Regarding the Input Pin of the IC
This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them
isolated. P-N junctions are formed at the intersection of the P layers with the N layers of other elements, creating a
parasitic diode or transistor. For example (refer to figure below):
When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.
When GND > Pin B, the P-N junction operates as a parasitic transistor.
Parasitic diodes inevitably occur in the structure of the IC. The operation of parasitic diodes can result in mutual
interference among circuits, operational faults, or physical damage. Therefore, conditions that cause these diodes to
operate, such as applying a voltage lower than the GND voltage to an input pin (and thus to the P substrate) should
be avoided.
Resistor
Transistor (NPN)
Pin A
Pin B
Pin B
B
E
C
Pin A
B
C
E
P
P+
P+
N
P+
P
P+
N
N
N
N
N
N
N
Parasitic
Elements
Parasitic
Elements
P Substrate
GND GND
P Substrate
GND
GND
Parasitic
Elements
Parasitic
Elements
N Region
close-by
Figure 51. Example of monolithic IC structure
11. Ceramic Capacitor
When using a ceramic capacitor, determine a capacitance value considering the change of capacitance with
temperature and the decrease in nominal capacitance due to DC bias and others.
12. Thermal Shutdown Circuit(TSD)
This IC has a built-in thermal shutdown circuit that prevents heat damage to the IC. Normal operation should always
be within the IC’s maximum junction temperature rating. If however the rating is exceeded for a continued period, the
junction temperature (Tj) will rise which will activate the TSD circuit that will turn OFF power output pins. When the Tj
falls below the TSD threshold, the circuits are automatically restored to normal operation.
Note that the TSD circuit operates in a situation that exceeds the absolute maximum ratings and therefore, under no
circumstances, should the TSD circuit be used in a set design or for any purpose other than protecting the IC from
heat damage.
13. Over Current Protection Circuit (OCP)
This IC incorporates an integrated overcurrent protection circuit that is activated when the load is shorted. This
protection circuit is effective in preventing damage due to sudden and unexpected incidents. However, the IC should
not be used in applications characterized by continuous operation or transitioning of the protection circuit.
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Ordering Information
B D
0
0
I
A
5 M H F V - M T R
Part
Number
Output
voltage
Voltag Output
Characteristic Package
HFV:HVSOF6
Packaging and
e
current
forming specification
M: Automotive Grade
TR: Emboss tape reel
resista
M:Automotive
00:Variable nce
I:7V
A5:0.5A
Marking Diagram
HVSOF6 (TOP VIEW)
Part Number Marking
B1
LOT Number
Pin 1 Mark
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Physical Dimension and Packing Information
Package Name
HVSOF6
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Revision History
Date
Revision
001
Changes
14.Mar.2018
New release
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Notice
Precaution on using ROHM Products
(Note 1)
1. If you intend to use our Products in devices requiring extremely high reliability (such as medical equipment
,
aircraft/spacecraft, nuclear power controllers, etc.) and whose malfunction or failure may cause loss of human life,
bodily injury or serious damage to property (“Specific Applications”), please consult with the ROHM sales
representative in advance. Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way
responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of any
ROHM’s Products for Specific Applications.
(Note1) Medical Equipment Classification of the Specific Applications
JAPAN
USA
EU
CHINA
CLASSⅢ
CLASSⅣ
CLASSⅡb
CLASSⅢ
CLASSⅢ
CLASSⅢ
2. ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor
products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate
safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which
a failure or malfunction of our Products may cause. The following are examples of safety measures:
[a] Installation of protection circuits or other protective devices to improve system safety
[b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure
3. Our Products are not designed under any special or extraordinary environments or conditions, as exemplified below.
Accordingly, ROHM shall not be in any way responsible or liable for any damages, expenses or losses arising from the
use of any ROHM’s Products under any special or extraordinary environments or conditions. If you intend to use our
Products under any special or extraordinary environments or conditions (as exemplified below), your independent
verification and confirmation of product performance, reliability, etc, prior to use, must be necessary:
[a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents
[b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust
[c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2,
H2S, NH3, SO2, and NO2
[d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves
[e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items
[f] Sealing or coating our Products with resin or other coating materials
[g] Use of our Products without cleaning residue of flux (even if you use no-clean type fluxes, cleaning residue of
flux is recommended); or Washing our Products by using water or water-soluble cleaning agents for cleaning
residue after soldering
[h] Use of the Products in places subject to dew condensation
4. The Products are not subject to radiation-proof design.
5. Please verify and confirm characteristics of the final or mounted products in using the Products.
6. In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse. is applied,
confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power
exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect
product performance and reliability.
7. De-rate Power Dissipation depending on ambient temperature. When used in sealed area, confirm that it is the use in
the range that does not exceed the maximum junction temperature.
8. Confirm that operation temperature is within the specified range described in the product specification.
9. ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in
this document.
Precaution for Mounting / Circuit board design
1. When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product
performance and reliability.
2. In principle, the reflow soldering method must be used on a surface-mount products, the flow soldering method must
be used on a through hole mount products. If the flow soldering method is preferred on a surface-mount products,
please consult with the ROHM representative in advance.
For details, please refer to ROHM Mounting specification
Notice-PAA-E
Rev.003
© 2015 ROHM Co., Ltd. All rights reserved.
Precautions Regarding Application Examples and External Circuits
1. If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the
characteristics of the Products and external components, including transient characteristics, as well as static
characteristics.
2. You agree that application notes, reference designs, and associated data and information contained in this document
are presented only as guidance for Products use. Therefore, in case you use such information, you are solely
responsible for it and you must exercise your own independent verification and judgment in the use of such information
contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses
incurred by you or third parties arising from the use of such information.
Precaution for Electrostatic
This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper
caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be
applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron,
isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).
Precaution for Storage / Transportation
1. Product performance and soldered connections may deteriorate if the Products are stored in the places where:
[a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2
[b] the temperature or humidity exceeds those recommended by ROHM
[c] the Products are exposed to direct sunshine or condensation
[d] the Products are exposed to high Electrostatic
2. Even under ROHM recommended storage condition, solderability of products out of recommended storage time period
may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is
exceeding the recommended storage time period.
3. Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads
may occur due to excessive stress applied when dropping of a carton.
4. Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of
which storage time is exceeding the recommended storage time period.
Precaution for Product Label
A two-dimensional barcode printed on ROHM Products label is for ROHM’s internal use only.
Precaution for Disposition
When disposing Products please dispose them properly using an authorized industry waste company.
Precaution for Foreign Exchange and Foreign Trade act
Since concerned goods might be fallen under listed items of export control prescribed by Foreign exchange and Foreign
trade act, please consult with ROHM in case of export.
Precaution Regarding Intellectual Property Rights
1. All information and data including but not limited to application example contained in this document is for reference
only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any
other rights of any third party regarding such information or data.
2. ROHM shall not have any obligations where the claims, actions or demands arising from the combination of the
Products with other articles such as components, circuits, systems or external equipment (including software).
3. No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any
third parties with respect to the Products or the information contained in this document. Provided, however, that ROHM
will not assert its intellectual property rights or other rights against you or your customers to the extent necessary to
manufacture or sell products containing the Products, subject to the terms and conditions herein.
Other Precaution
1. This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM.
2. The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written
consent of ROHM.
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Products or this document for any military purposes, including but not limited to, the development of mass-destruction
weapons.
4. The proper names of companies or products described in this document are trademarks or registered trademarks of
ROHM, its affiliated companies or third parties.
Notice-PAA-E
Rev.003
© 2015 ROHM Co., Ltd. All rights reserved.
Daattaasshheeeett
General Precaution
1. Before you use our Products, you are requested to carefully read this document and fully understand its contents.
ROHM shall not be in any way responsible or liable for failure, malfunction or accident arising from the use of any
ROHM’s Products against warning, caution or note contained in this document.
2. All information contained in this document is current as of the issuing date and subject to change without any prior
notice. Before purchasing or using ROHM’s Products, please confirm the latest information with a ROHM sales
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concerning such information.
Notice – WE
Rev.001
© 2015 ROHM Co., Ltd. All rights reserved.
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