BD00IC0MEFJ-M [ROHM]

BDxxIC0MEFJ-M系列是可提供1.0A输出电流的稳压器。输出精度为±1%。有可使用外接电阻在0.8V~4.5V范围内任意设置输出电压的可变型以及1.0V/1.2V/1.5V/1.8V/2.5V/3.0V/3.3V固定输出型两种。封装组件采用散热性优良的HTSOP-J8。本机型内置用于防止因输出短路等发生IC破坏的过电流保护电路、关断时使电路电流为0µA的ON/OFF开关、以及防止因过负荷状态等使IC发生热破坏的温度保护电路。另外,采用了陶瓷电容器,有助于整机的小型化和长寿化。;
BD00IC0MEFJ-M
型号: BD00IC0MEFJ-M
厂家: ROHM    ROHM
描述:

BDxxIC0MEFJ-M系列是可提供1.0A输出电流的稳压器。输出精度为±1%。有可使用外接电阻在0.8V~4.5V范围内任意设置输出电压的可变型以及1.0V/1.2V/1.5V/1.8V/2.5V/3.0V/3.3V固定输出型两种。封装组件采用散热性优良的HTSOP-J8。本机型内置用于防止因输出短路等发生IC破坏的过电流保护电路、关断时使电路电流为0µA的ON/OFF开关、以及防止因过负荷状态等使IC发生热破坏的温度保护电路。另外,采用了陶瓷电容器,有助于整机的小型化和长寿化。

开关 过电流保护 电容器 陶瓷电容器 稳压器
文件: 总24页 (文件大小:1203K)
中文:  中文翻译
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Datasheet  
Automotive 1.0A Variable Output  
LDO Regulator  
BDxxIC0MEFJ-M BDxxIC0VEFJ-M  
General Description  
BDxxIC0MEFJ-M BDxxIC0VEFJ-M is a LDO regulator with output current 1.0A. The output accuracy is ±1% of output  
voltage. With external resistance, it is available to set the output voltage at random (from 0.8V to 4.5V).It has package type:  
HTSOP-J8. Over current protection (for protecting the IC destruction by output short circuit), circuit current ON/OFF switch  
(for setting the circuit 0μA at shutdown mode), and thermal shutdown circuit (for protecting IC from heat destruction by over  
load condition) are all built in. It is usable for ceramic capacitor and enables to improve smaller set and long-life.  
(Typ.)  
(Typ.)  
(Max.)  
Package  
HTSOP-J8  
Features  
High accuracy reference voltage circuit  
4.90mm x 6.00mm x 1.00mm  
Built-in Over Current Protection circuit (OCP)  
Built-in Thermal Shut Down circuit (TSD)  
With shut down switch  
AEC-Q100 Qualified  
Key Specifications  
Input power supply voltage range:  
Output voltage range(Variable type):  
2.5V to 5.5V  
0.8V to 4.5V  
Output voltage(Fixed type): 1.0V/1.2V1.5V/1.8V/2.5V  
/3.0V/3.3V  
Output current:  
Shutdown current:  
1.0A (Max.)  
0μA(Typ.)  
Operating temperature range:  
-40to +105℃  
HTSOP-J8  
Typical Application Circuit  
VCC  
EN  
VO  
VCC  
EN  
VO  
COUT  
COUT  
CIN  
CIN  
R1  
R2  
VO_S  
FB  
GND  
FIN  
GND  
FIN  
CIN,COUT : Ceramic Capacitor  
CIN,COUT : Ceramic Capacitor  
Product structureSilicon monolithic integrated circuit This product is not designed protection against radioactive rays.  
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Datasheet  
BDxxIC0MEFJ-M BDxxIC0VEFJ-M  
Ordering Information  
B D x x  
I
C
0 y E F J  
-
M E 2  
Part  
Output  
Voltage  
resistance current  
Output  
Automotive Package  
“M”:M series  
Packaging and forming specification  
Number voltage  
00:Variable I:7V  
C0:1.0A “V”:  
M Series,  
EFJ:HTSOP-J8 E2:Emboss tape reel  
10:1.0V  
12:1.2V  
15:1.5V  
18:1.8V  
25:2.5V  
30:3.0V  
33:3.3V  
Additional  
production  
line  
Output Voltage  
Variable  
Package  
Ordering Code  
Production Line(Note 1)  
BD00IC0MEFJ-ME2  
BD00IC0VEFJ-ME2  
BD10IC0MEFJ-ME2  
BD10IC0VEFJ-ME2  
BD12IC0MEFJ-ME2  
BD12IC0VEFJ-ME2  
BD15IC0MEFJ-ME2  
BD15IC0VEFJ-ME2  
BD18IC0MEFJ-ME2  
BD18IC0VEFJ-ME2  
BD25IC0MEFJ-ME2  
BD25IC0VEFJ-ME2  
BD30IC0MEFJ-ME2  
BD30IC0VEFJ-ME2  
BD33IC0MEFJ-ME2  
BD33IC0VEFJ-ME2  
A
B
A
B
A
B
A
B
A
B
A
B
A
B
A
B
1.0V  
1.2V  
1.5V  
1.8V  
2.5V  
3.0V  
3.3V  
HTSOP-J8  
(Note1) For the purpose of improving production efficiency, Production Line A and B have a multi-line configuration.  
Electric characteristics noted in Datasheet does not differ between Production Line A and B. Production Line B is recommended  
for new product.  
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Datasheet  
BDxxIC0MEFJ-M BDxxIC0VEFJ-M  
Block Diagram  
BD00IC0MEFJ-M BD00IC0VEFJ-M  
(VO+0.60) to 5.5V  
Ceramic  
GND  
3
VCC  
8
1.0μF  
Capacitor  
OCP  
SOFT  
START  
0.8V to 4.5V  
Vo  
FB  
1
2
Ceramic  
Capacitor  
R1  
R2  
1.0μF  
EN  
5
TSD  
Fig.1 Block Diagram  
BDxxIC0MEFJ-M BDxxIC0VEFJ-M (Fixed type)  
2.45.5V  
VCC  
8
Ceramic  
Capacitor  
1.0μF  
OCP  
SOFT  
START  
VO  
EN  
5
1
2
TSD  
Ceramic  
Capacitor  
1.0μF  
GND  
3
VO_S  
FIN  
Fig.2 Block Diagram (Fixed type)  
TOP VIEW  
Pin Configuration  
VO  
FB/Vo_s  
GND  
VCC  
N.C.  
N.C.  
EN  
N.C.  
Pin Description  
Pin No.  
Pin name  
VO  
Pin Function  
1
Output pin  
Feedback pin  
GND pin  
2
FB/Vo_s  
GND  
N.C.  
EN  
3
4
Non Connection (Used to connect GND or OPEN state.)  
Enable pin  
5
6
N.C.  
N.C.  
VCC  
Non Connection (Used to connect GND or OPEN state.)  
Non Connection (Used to connect GND or OPEN state.)  
Input pin  
7
8
Reverse  
FIN  
Substrate(Connect to GND)  
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Datasheet  
BDxxIC0MEFJ-M BDxxIC0VEFJ-M  
Absolute Maximum Ratings (Ta=25)  
Parameter  
Symbol  
VCC  
Limits  
7.0 *1  
Unit  
V
Power supply voltage  
EN voltage  
VEN  
7.0  
V
Power dissipation  
HTSOP-J8  
Pd*2  
2110 *2  
-40 to +105  
-55 to +150  
+150  
mW  
Operating Temperature Range  
Storage Temperature Range  
Topr  
Tstg  
Junction Temperature  
Tjmax  
*1 Not to exceed Pd  
*2 Reduced by 16.9mW/for each increase in Ta of 1over 25. (when mounted on a board 70mm×70mm×1.6mm glass-epoxy board, two layer)  
Recommended Operating Ratings (Ta=25)  
Parameter  
Input power supply voltage  
EN voltage  
Symbol  
VCC  
VEN  
VO  
Min.  
2.4  
0.0  
0.8  
0.0  
Max.  
5.5  
Unit  
V
5.5  
V
Output voltage setting range  
Output current  
4.5  
V
IO  
1.0  
A
Electrical Characteristics (Unless otherwise noted, EN=3V, Vcc=3.3V, R1=16kΩ, R2=7.5kΩ)  
Parameter  
Circuit current at shutdown  
mode  
Symbol  
Temp  
25℃  
Min.  
Typ.  
Max.  
5
Unit  
Conditions  
-
0
ISD  
μA EN=0V, OFF mode  
μA  
-40~105℃  
25℃  
-
-
5
-
250  
500  
700  
50  
Bias current  
ICC  
Reg.I  
Reg IO  
VCO  
-40~105℃  
25℃  
-
-
-
25  
Line regulation  
mV VCC =( Vo+0.6V )5.5V  
mV IO=01.0A  
-40~105℃  
25℃  
-
-
50  
-
25  
75  
Load regulation  
Minimum dropout Voltage  
-40~105℃  
25℃  
-
-
75  
-
-
0.4  
0.6  
V
V
VCC=3.3V, IO=1.0A  
IO=0mA  
-40~105℃  
25℃  
-
0.9  
0.792  
0.776  
Vo×0.99  
0.800  
0.808  
0.824  
Vo×1.01  
Vo×1.03  
0.8  
Output reference voltage  
(Variable type)  
VFB  
-40~105℃  
25℃  
-
Vo  
Vo  
-
Output voltage(Fixed type)  
EN Low voltage  
VO  
V
IO=0mA  
-40~105Vo×0.97  
25℃  
-40~105℃  
25℃  
0
0
VEN(Low)  
VEN(High)  
IEN  
V
-
0.8  
2.4  
2.4  
1
-
5.5  
EN High voltage  
V
-40~105℃  
25℃  
-
5.5  
3
-
9
EN Bias current  
µA  
-40~105℃  
-
9
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Datasheet  
BDxxIC0MEFJ-M BDxxIC0VEFJ-M  
Typical Performance Curves  
(Unless otherwise noted, EN=3V, VCC=3.3V, R1=16kΩ, R2=7.5kΩ)  
Vo  
Vo  
200mV/div  
200mV/div  
Io  
Io  
0.5A/div  
0.5A/div  
10usec/div  
10usec/div  
Fig.3  
Fig.4  
Transient Response  
Transient Response  
(01.0A)  
(1.00A)  
Co=1µF,Ta=-40℃  
Co=1µF,Ta=25℃  
Vo  
Vo  
200mV/div  
200mV/div  
Io  
Io  
0.5A/div  
0.5A/div  
10usec/div  
2msec/div  
Fig.5  
Fig.6  
Transient Response  
Transient Response  
(01.0A)  
(1.00A)  
Co=1µF,Ta=105℃  
Co=1µF,Ta=-40℃  
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Datasheet  
BDxxIC0MEFJ-M BDxxIC0VEFJ-M  
Vo  
Vo  
200mV/div  
200mV/div  
Io  
Io  
0.5A/div  
0.5A/div  
2msec/div  
2msec/div  
Fig.7  
Transient Response  
Fig.8  
Transient Response  
(1.00A)  
(1.00A)  
Co=1µF,Ta=25℃  
Co=1µF,Ta=105℃  
VEN  
VEN  
2V/div  
2V/div  
Vcc  
Vcc  
2V/div  
2V/div  
Vo  
2V/div  
Vo  
2V/div  
1msec/div  
1msec/div  
Fig.9  
Input sequence 1  
Fig.10  
Input sequence 1  
Co=1µF,Ta=-40℃  
Co=1µF,Ta=25℃  
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Datasheet  
BDxxIC0MEFJ-M BDxxIC0VEFJ-M  
VEN  
VEN  
2V/div  
2V/div  
Vcc  
Vcc  
2V/div  
2V/div  
Vo  
Vo  
2V/div  
2V/div  
1msec/div  
20msec/div  
Fig.12  
OFF sequence 1  
Co=1µF,Ta=-40℃  
Fig.11  
Input sequence 1  
Co=1µF,Ta=105℃  
VEN  
VEN  
2V/div  
2V/div  
Vcc  
Vcc  
2V/div  
2V/div  
Vo  
Vo  
2V/div  
2V/div  
20msec/div  
20msec/div  
Fig.13  
Fig.14  
OFF sequence 1  
OFF sequence 1  
Co=1µF,Ta=25℃  
Co=1µF,Ta=105℃  
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Datasheet  
BDxxIC0MEFJ-M BDxxIC0VEFJ-M  
VEN  
2V/div  
VEN  
2V/div  
Vcc  
Vcc  
2V/div  
2V/div  
Vo  
Vo  
2V/div  
2V/div  
1msec/div  
1msec/div  
Fig.16  
Input sequence 2  
Fig.15  
Input sequence 2  
Co=1µF,Ta=25℃  
Co=1µF,Ta=-40℃  
VEN  
VEN  
2V/div  
2V/div  
Vcc  
Vcc  
2V/div  
2V/div  
Vo  
Vo  
2V/div  
2V/div  
1msec/div  
20msec/div  
Fig.18  
OFF sequence 2  
Co=1µF,Ta=-40℃  
Fig.17  
Input sequence 2  
Co=1µF,Ta=105℃  
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Datasheet  
BDxxIC0MEFJ-M BDxxIC0VEFJ-M  
VEN  
2V/div  
VEN  
2V/div  
Vcc  
2V/div  
Vcc  
2V/div  
Vo  
2V/div  
Vo  
2V/div  
20msec/div  
20msec/div  
Fig.20  
OFF sequence 2  
Co=1µF,Ta=105℃  
Fig.19  
OFF sequence 2  
Co=1µF,Ta=25℃  
Ta[]  
Ta[]  
Fig.22  
Ta-ICC  
Fig.21  
Ta-VO (IO=0mA)  
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Datasheet  
BDxxIC0MEFJ-M BDxxIC0VEFJ-M  
Ta []  
Ta []  
Fig.23  
Ta-ISD  
(VEN=0V)  
Fig.24  
Ta-IEN  
IO [A]  
VCC [V]  
Fig.25  
IO-VO  
Fig.26  
Vcc-IsD  
(Ven=0V)  
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Datasheet  
BDxxIC0MEFJ-M BDxxIC0VEFJ-M  
VCC [V]  
Ta []  
Fig.28  
TSD (IO=0mA)  
Fig.27  
Vcc-Vo  
(Io=0mA)  
Ta []  
IO [A]  
Fig.30  
Minimum dropout  
Voltage1  
Fig.29  
IO-VO  
VCC=3.3VIO=1.0A)  
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Datasheet  
BDxxIC0MEFJ-M BDxxIC0VEFJ-M  
IO [A]  
IO [A]  
Fig.31  
Operation Safety area  
Fig.32  
IO-ICC  
IO [A]  
Fig.34  
Fig.33  
PSRR (IO=0mA)  
Minimum dropout Voltage 2  
VCC=2.4V, Ta=25℃)  
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Datasheet  
BDxxIC0MEFJ-M BDxxIC0VEFJ-M  
IO [A]  
IO [A]  
Fig.36  
Fig.35  
Minimum dropout Voltage 2  
Minimum dropout Voltage 2  
VCC=4V, Ta=25℃)  
VCC=3.3, Ta=25℃)  
IO [A]  
Fig.37  
Minimum dropout Voltage 5  
VCC=5.5VTa=25℃)  
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Datasheet  
BDxxIC0MEFJ-M BDxxIC0VEFJ-M  
Power Dissipation  
HTSOP-J8  
4.0  
3.76W  
Measure condition: mounted on a ROHM board,  
and IC  
Substrate size: 70mm × 70mm × 1.6mm  
(Substrate with thermal via)  
3.0  
Solder the substrate and package reverse  
exposure heat radiation part  
2.11W  
IC only  
2.0  
θj-a=249.5/W  
1-layercopper foil are :0mm×0mm)  
θj-a=153.2/W  
2-layercopper foil are :15mm×15mm)  
θj-a=113.6/W  
1.10W  
1.0  
0.82W  
2-layercopper foil are :70mm×70mm)  
θj-a=59.2/W  
0.50W  
4-layercopper foil are :70mm×70mm)  
θj-a=33.3/W  
0
0
25  
50  
75  
100  
125  
150  
AmbientTemperature:Ta []  
Thermal design should allow operation within the following conditions. Note that the temperatures listed are the allowed  
temperature limits, and thermal design should allow sufficient margin from the limits.  
1. Ambient temperature Ta can be no higher than 105.  
2. Chip junction temperature (Tj) can be no higher than 150.  
Chip junction temperature can be determined as follows:  
Calculation based on ambient temperature (Ta)  
Tj=Ta+θj-a×W  
Reference values>  
1-layer substrate (copper foil density 0mm×0mm)  
2-layer substrate (copper foil density 15mm×15mm)  
2-layer substrate (copper foil density 70mm×70mm)  
4-layer substrate (copper foil density 70mm×70mm)  
θj-a: HTSOP-J8 153.2/W  
113.6/W  
59.2/W  
33.3/W  
Substrate size: 70mm×70mm×1.6mm (substrate with thermal via)  
Most of the heat loss that occurs in the BDxxIC0MEFJ-M BDxxIC0VEFJ-M is generated from the output Pch FET. Power  
loss is determined by the total VCC-VO voltage and output current. Be sure to confirm the system input and output voltage  
and the output current conditions in relation to the heat dissipation characteristics of the VCC and VO in the design. Bearing  
in mind that heat dissipation may vary substantially depending on the substrate employed (due to the power package  
incorporated in the BDxxIC0MEFJ-M BDxxIC0VEFJ-M make certain to factor conditions such as substrate size into the  
thermal design.  
Power consumption[W] = Input voltage (VCC) - Output voltage (VO) ×IO(Ave)  
Example) Where VCC=5.0V, VO=3.3V, IO(Ave) = 0.1A,  
Power consumption[W] = 5.0V - 3.3V ×0.1A  
=0.17W  
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Datasheet  
BDxxIC0MEFJ-M BDxxIC0VEFJ-M  
Input-to-Output Capacitor  
It is recommended that a capacitor is placed nearby pin between Input pin and GND, output pin and GND.  
A capacitor, between input pin and GND, is valid when the power supply impedance is high or drawing is long. Also as for  
a capacitor, between output pin and GND, the greater the capacity, more sustainable the line regulation and it makes  
improvement of characteristics by load change. However, please check by mounted on a board for the actual application.  
Ceramic capacitor usually has difference, thermal characteristics and series bias characteristics, and moreover capacity  
decreases gradually by using conditions.  
For more detail, please be sure to inquire the manufacturer, and select the best ceramic capacitor.  
10  
0
Rated Voltage10V  
B1 characteristics  
Rated Voltage10V  
B characteristics  
-10  
-20  
-30  
-40  
-50  
-60  
-70  
-80  
-90  
-100  
Rated Voltage6.3V  
B characteristics  
Rated Voltage:10V  
F characteristics  
Rated Voltage4V  
X6S characteristics  
0
1
2
3
4
DC Bias Voltage  
[V]  
Ceramic capacitor capacity – DC bias characteristics  
(Characteristics example)  
Equivalent Series Resistance ESR (ceramic capacitor etc.)  
10.00  
1.00  
Please attach an anti-oscillation capacitor between VO and  
GND. Capacitor usually has ESR(Equivalent Series  
Resistance), and operates stable in ESR-IO range, showed  
right. Generally, ESR of ceramic, tantalum and electronic  
capacitor etc. is different for each, so please be sure to check  
a capacitor which is going to use, and use it inside the stable  
operating region, showed right. Then, please evaluate for the  
actual application.  
Safety area  
0.10  
0.01  
0
0.2  
0.4  
Io [A]  
0.6  
0.8  
1
ESR – IO characteristics  
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TSZ2211115001  
Datasheet  
BDxxIC0MEFJ-M BDxxIC0VEFJ-M  
Evaluation Board Circuit  
C3  
C7  
8
1
2
VCC  
N.C  
N.C  
EN  
VO  
C6  
C5  
C2  
C1  
R1  
R2  
7
FB  
VCC  
GND  
3
4
6
5
GND  
N.C.  
U1  
SW1  
VO  
EN  
FIN  
Evaluation Board Parts List  
Designation Value  
Part No.  
Company Designation Value  
Part No.  
Company  
R1  
R2  
R3  
R4  
R5  
R6  
C1  
43kΩ  
8.2kΩ  
MCR01PZPZF4302  
ROHM  
C4  
C5  
C6  
C7  
C8  
C9  
C10  
MCR01PZPZF8201  
ROHM  
1µF  
CM105X7R105K16AB  
KYOCERA  
1µF  
CM105B105K16A  
KYOCERA  
BD00IC0MEFJ-M  
BD00IC0VEFJ-M  
C2  
C3  
U1  
U2  
ROHM  
Board Layout  
EN  
GND  
CIN  
(
VCC V  
)
IN  
R1  
R2  
COUT  
VO  
Input capacitor CIN of VCC (VIN) should be placed very close to VCC(VIN) pin as possible, and used broad wiring pattern.  
Output capacitor COUT also should be placed close to IC pin as possible. In case connected to inner layer GND plane,  
please use several through hole.  
FB pin has comparatively high impedance, and is apt to be effected by noise, so floating capacity should be minimum as  
possible. Please be careful in wiring drawing  
Please take GND pattern space widely, and design layout to be able to increase radiation efficiency.  
For output voltage setting  
Output voltage can be set by FB pin voltage0.800V typ.and external resistance R1, R2.  
R1+R2  
VO = VFB×  
R2  
The use of resistors with R1+R2=1k to 90kΩ is recommended)  
www.rohm.com  
TSZ02201-0R6R0AN00300-1-2  
2021.10.11 Rev.002  
© 2012 ROHM Co., Ltd. All rights reserved.  
16/21  
TSZ2211115001  
Datasheet  
BDxxIC0MEFJ-M BDxxIC0VEFJ-M  
I/O Equivalent circuits (Variable type)  
8pin(VCC) / 1pin(VO)  
2pin(FB)  
5pin(EN)  
2pin(FB)  
8pin(VCC  
)
5pin(EN)  
520kΩ  
480kΩ  
1pn(VO)  
I/O Equivalent circuits (Fixed type)  
8pin(VCC) / 1pin(VO)  
2pin(VO_S)  
5pin(EN)  
8pin(VCC  
)
2pin(VO_S  
)
5pin(EN)  
520kΩ  
480kΩ  
1pin(VO)  
www.rohm.com  
TSZ02201-0R6R0AN00300-1-2  
2021.10.11 Rev.002  
© 2012 ROHM Co., Ltd. All rights reserved.  
17/21  
TSZ2211115001  
Datasheet  
BDxxIC0MEFJ-M BDxxIC0VEFJ-M  
Operational Notes  
(1). Absolute maximum ratings  
An excess in the absolute maximum ratings, such as supply voltage, temperature range of operating conditions, etc.,  
can break down the devices, thus making impossible to identify breaking mode, such as a short circuit or an open  
circuit. If any over rated values will expect to exceed the absolute maximum ratings, consider adding circuit protection  
devices, such as fuses.  
(2). Connecting the power supply connector backward  
Connecting of the power supply in reverse polarity can damage IC. Take precautions when connecting the power  
supply lines. An external direction diode can be added.  
(3). Power supply lines  
Design PCB layout pattern to provide low impedance GND and supply lines. To obtain a low noise ground and supply  
line, separate the ground section and supply lines of the digital and analog blocks. Furthermore, for all power supply  
terminals to ICs, connect a capacitor between the power supply and the GND terminal. When applying electrolytic  
capacitors in the circuit, not that capacitance characteristic values are reduced at low temperatures.  
(4). GND voltage  
The potential of GND pin must be minimum potential in all operating conditions.  
(5). Thermal design  
Use a thermal design that allows for a sufficient margin in light of the power dissipation (Pd) in actual operating  
conditions.  
(6). Inter-pin shorts and mounting errors  
Use caution when positioning the IC for mounting on printed circuit boards. The IC may be damaged if there is any  
connection error or if pins are shorted together.  
(7). Actions in strong electromagnetic field  
Use caution when using the IC in the presence of a strong electromagnetic field as doing so may cause the IC to  
malfunction.  
(8). ASO  
When using the IC, set the output transistor so that it does not exceed absolute maximum ratings or ASO.  
(9). Thermal shutdown circuit  
The IC incorporates a built-in thermal shutdown circuit (TSD circuit). The thermal shutdown circuit (TSD circuit) is  
designed only to shut the IC off to prevent thermal runaway. It is not designed to protect the IC or guarantee its  
operation. Do not continue to use the IC after operating this circuit or use the IC in an environment where the  
operation of this circuit is assumed.  
TSD ON Temperature[] (typ.)  
Hysteresis Temperature [] (typ.)  
BDxxIC0MEFJ-M  
BDxxIC0VEFJ-M  
175  
15  
(10). Testing on application boards  
When testing the IC on an application board, connecting a capacitor to a pin with low impedance subjects the IC to  
stress. Always discharge capacitors after each process or step. Always turn the IC’s power supply off before  
connecting it to or removing it from a jig or fixture during the inspection process. Ground the IC during assembly  
steps as an antistatic measure. Use similar precaution when transporting or storing the IC.  
www.rohm.com  
TSZ02201-0R6R0AN00300-1-2  
2021.10.11 Rev.002  
© 2012 ROHM Co., Ltd. All rights reserved.  
18/21  
TSZ2211115001  
Datasheet  
BDxxIC0MEFJ-M BDxxIC0VEFJ-M  
(11). Regarding input pin of the IC  
This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them  
isolated.  
P-N junctions are formed at the intersection of these P layers with the N layers of other elements, creating a parasitic  
diode or transistor. For example, the relation between each potential is as follows:  
When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.  
When GND > Pin B, the P-N junction operates as a parasitic transistor.  
Parasitic diodes can occur inevitable in the structure of the IC.  
The operation of parasitic diodes can result in mutual interference among circuits, operational faults, or physical  
damage. Accordingly, methods by which parasitic diodes operate, such as applying a voltage that is lower than the  
GND(P substrate) voltage to an input pin, should not be used.  
Transistor (NPN)  
Resistor  
B
Pin A  
Pin B  
Pin B  
C
E
Pin A  
B
C
E
N
N
N
P+  
P+  
P+  
P+  
P
P
Parasitic  
element  
N
N
N
Parasitic  
element  
P substrate  
P substrate  
GND  
GND  
GND  
GND  
Parasitic element  
Parasitic element  
Other adjacent elements  
(12). Ground Wiring Pattern.  
When using both small signal and large current GND patterns, it is recommended to isolate the two ground patterns,  
placing a single ground point at the ground potential of application so that the pattern wiring resistance and voltage  
variations caused by large currents do not cause variations in the small signal ground voltage. Be careful not to  
change the GND wiring pattern of any external components, either.  
Status of this document  
The Japanese version of this document is formal specification. A customer may use this translation version only for a reference  
to help reading the formal version.  
If there are any differences in translation version of this document formal version takes priority.  
www.rohm.com  
TSZ02201-0R6R0AN00300-1-2  
2021.10.11 Rev.002  
© 2012 ROHM Co., Ltd. All rights reserved.  
19/21  
TSZ2211115001  
Datasheet  
BDxxIC0MEFJ-M BDxxIC0VEFJ-M  
Physical Dimension Tape and Reel Information  
Marking Diagram  
HTSOP-J8 (TOP VIEW)  
Part Number Marking  
x x I C 0 y  
LOT Number  
1PIN MARK  
Part Number Marking  
00IC0M  
10IC0M  
12IC0M  
15IC0M  
18IC0M  
25IC0M  
30IC0M  
33IC0M  
00IC0V  
Part Number  
BD00IC0MEFJ-ME2  
BD10IC0MEFJ-ME2  
BD12IC0MEFJ-ME2  
BD15IC0MEFJ-ME2  
BD18IC0MEFJ-ME2  
BD25IC0MEFJ-ME2  
BD30IC0MEFJ-ME2  
BD33IC0MEFJ-ME2  
BD00IC0VEFJ-ME2  
BD10IC0VEFJ-ME2  
BD12IC0VEFJ-ME2  
BD15IC0VEFJ-ME2  
BD18IC0VEFJ-ME2  
BD25IC0VEFJ-ME2  
BD30IC0VEFJ-ME2  
BD33IC0VEFJ-ME2  
10IC0V  
12IC0V  
15IC0V  
18IC0V  
25IC0V  
30IC0V  
33IC0V  
www.rohm.com  
TSZ02201-0R6R0AN00300-1-2  
2021.10.11 Rev.002  
© 2012 ROHM Co., Ltd. All rights reserved.  
20/21  
TSZ2211115001  
Datasheet  
BDxxIC0MEFJ-M BDxxIC0VEFJ-M  
Revision History  
Date  
Revision  
001  
Changes  
31.Aug.2012  
New Release  
Add BDxxIC0VEFJ-M Series  
Deleted improper lineups.  
11.Oct.2021  
002  
www.rohm.com  
TSZ02201-0R6R0AN00300-1-2  
2021.10.11 Rev.002  
© 2012 ROHM Co., Ltd. All rights reserved.  
21/21  
TSZ2211115001  
Notice  
Precaution on using ROHM Products  
(Note 1)  
1. If you intend to use our Products in devices requiring extremely high reliability (such as medical equipment  
,
aircraft/spacecraft, nuclear power controllers, etc.) and whose malfunction or failure may cause loss of human life,  
bodily injury or serious damage to property (“Specific Applications”), please consult with the ROHM sales  
representative in advance. Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way  
responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of any  
ROHM’s Products for Specific Applications.  
(Note1) Medical Equipment Classification of the Specific Applications  
JAPAN  
USA  
EU  
CHINA  
CLASS  
CLASSⅣ  
CLASSb  
CLASSⅢ  
CLASSⅢ  
CLASSⅢ  
2. ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor  
products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate  
safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which  
a failure or malfunction of our Products may cause. The following are examples of safety measures:  
[a] Installation of protection circuits or other protective devices to improve system safety  
[b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure  
3. Our Products are not designed under any special or extraordinary environments or conditions, as exemplified below.  
Accordingly, ROHM shall not be in any way responsible or liable for any damages, expenses or losses arising from the  
use of any ROHM’s Products under any special or extraordinary environments or conditions. If you intend to use our  
Products under any special or extraordinary environments or conditions (as exemplified below), your independent  
verification and confirmation of product performance, reliability, etc, prior to use, must be necessary:  
[a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents  
[b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust  
[c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2,  
H2S, NH3, SO2, and NO2  
[d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves  
[e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items  
[f] Sealing or coating our Products with resin or other coating materials  
[g] Use of our Products without cleaning residue of flux (Exclude cases where no-clean type fluxes is used.  
However, recommend sufficiently about the residue.); or Washing our Products by using water or water-soluble  
cleaning agents for cleaning residue after soldering  
[h] Use of the Products in places subject to dew condensation  
4. The Products are not subject to radiation-proof design.  
5. Please verify and confirm characteristics of the final or mounted products in using the Products.  
6. In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse, is applied,  
confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power  
exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect  
product performance and reliability.  
7. De-rate Power Dissipation depending on ambient temperature. When used in sealed area, confirm that it is the use in  
the range that does not exceed the maximum junction temperature.  
8. Confirm that operation temperature is within the specified range described in the product specification.  
9. ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in  
this document.  
Precaution for Mounting / Circuit board design  
1. When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product  
performance and reliability.  
2. In principle, the reflow soldering method must be used on a surface-mount products, the flow soldering method must  
be used on a through hole mount products. If the flow soldering method is preferred on a surface-mount products,  
please consult with the ROHM representative in advance.  
For details, please refer to ROHM Mounting specification  
Notice-PAA-E  
Rev.004  
© 2015 ROHM Co., Ltd. All rights reserved.  
Precautions Regarding Application Examples and External Circuits  
1. If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the  
characteristics of the Products and external components, including transient characteristics, as well as static  
characteristics.  
2. You agree that application notes, reference designs, and associated data and information contained in this document  
are presented only as guidance for Products use. Therefore, in case you use such information, you are solely  
responsible for it and you must exercise your own independent verification and judgment in the use of such information  
contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses  
incurred by you or third parties arising from the use of such information.  
Precaution for Electrostatic  
This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper  
caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be  
applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron,  
isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).  
Precaution for Storage / Transportation  
1. Product performance and soldered connections may deteriorate if the Products are stored in the places where:  
[a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2  
[b] the temperature or humidity exceeds those recommended by ROHM  
[c] the Products are exposed to direct sunshine or condensation  
[d] the Products are exposed to high Electrostatic  
2. Even under ROHM recommended storage condition, solderability of products out of recommended storage time period  
may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is  
exceeding the recommended storage time period.  
3. Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads  
may occur due to excessive stress applied when dropping of a carton.  
4. Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of  
which storage time is exceeding the recommended storage time period.  
Precaution for Product Label  
A two-dimensional barcode printed on ROHM Products label is for ROHM’s internal use only.  
Precaution for Disposition  
When disposing Products please dispose them properly using an authorized industry waste company.  
Precaution for Foreign Exchange and Foreign Trade act  
Since concerned goods might be fallen under listed items of export control prescribed by Foreign exchange and Foreign  
trade act, please consult with ROHM in case of export.  
Precaution Regarding Intellectual Property Rights  
1. All information and data including but not limited to application example contained in this document is for reference  
only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any  
other rights of any third party regarding such information or data.  
2. ROHM shall not have any obligations where the claims, actions or demands arising from the combination of the  
Products with other articles such as components, circuits, systems or external equipment (including software).  
3. No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any  
third parties with respect to the Products or the information contained in this document. Provided, however, that ROHM  
will not assert its intellectual property rights or other rights against you or your customers to the extent necessary to  
manufacture or sell products containing the Products, subject to the terms and conditions herein.  
Other Precaution  
1. This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM.  
2. The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written  
consent of ROHM.  
3. In no event shall you use in any way whatsoever the Products and the related technical information contained in the  
Products or this document for any military purposes, including but not limited to, the development of mass-destruction  
weapons.  
4. The proper names of companies or products described in this document are trademarks or registered trademarks of  
ROHM, its affiliated companies or third parties.  
Notice-PAA-E  
Rev.004  
© 2015 ROHM Co., Ltd. All rights reserved.  
Daattaasshheeeett  
General Precaution  
1. Before you use our Products, you are requested to carefully read this document and fully understand its contents.  
ROHM shall not be in any way responsible or liable for failure, malfunction or accident arising from the use of any  
ROHM’s Products against warning, caution or note contained in this document.  
2. All information contained in this document is current as of the issuing date and subject to change without any prior  
notice. Before purchasing or using ROHM’s Products, please confirm the latest information with a ROHM sales  
representative.  
3. The information contained in this document is provided on an “as is” basis and ROHM does not warrant that all  
information contained in this document is accurate and/or error-free. ROHM shall not be in any way responsible or  
liable for any damages, expenses or losses incurred by you or third parties resulting from inaccuracy or errors of or  
concerning such information.  
Notice – WE  
Rev.001  
© 2015 ROHM Co., Ltd. All rights reserved.  

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