BD18395EFV-M_技术文档

Datasheet

Buck LED Driver

Buck LED Driver for Automotive

Suitable for Matrix LED Control

BD18395EFV-M

General Description

Key Specifications

BD18395EFV-M is a Buck LED driver suitable for matrix

LED control. It has a wide input voltage range from 4.5 V

to 70 V with a possible average output current of 2.0 A

max. A shutdown function reduces power consumption.

The LED current can be set by an external current setting

resistor, and it operates by peak current detection OFF

TIME control. The device includes self-protection

features such as UVLO, overcurrent protection, LED

open detection, low output voltage detection, status good

output and a thermal shutdown function.

◼Input Voltage Range:

4.5 V to 70 V

0 V to 60 V

0.1 A to 2.0 A

170 mΩ (Typ)

0 μA (Typ)

◼Output Voltage Range:

◼Average Output Current:

◼High side FET ON Resistance:

◼Standby Current:

◼Operating Temperature Range:

-40 °C to +125 °C

Package

HTSSOP-B20

W (Typ) x D (Typ) x H (Max)

6.5 mm x 6.4 mm x 1.0 mm

The device is suitable for matrix control of LEDs.

Features

◼

AEC-Q100 Qualified ^{(Note 1)}

Functional Safety Supportive Automotive Products

Peak Current Detection OFF TIME Control System

For Use with Matrix LED Control

(High-speed Response Current Control)

High-side LED Current Detection

LED Voltage Maximum 60 V

Shutdown for Low Power Consumption

Control Loop Compensating Circuit is not needed

Normal State Flag Output (Status Good Signal)

◼

HTSSOP-B20

Various Protection Functions

(Note 1) Grade 1

Applications

◼ Automotive Exterior Lamps

(Rear, Turn, DRL/Position, Fog, Dynamic Indicator,

High/Low Beam, AFS Head Lamp, ADB Head Lamp

etc.)

Typical Application Circuit

〇Product structure : Silicon integrated circuit 〇This product has no designed protection against radioactive rays

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Pin Configuration

HTSSOP-B20

(TOP VIEW)

Pin Description

Pin No.

Pin Name

VPOW

SNSN

SNSP

VB

Function

1

2

Power supply input for high side FET

Inductor current sense input (-)

Inductor current sense input (+)

Power supply input

3

4

5

6

N.C.

Non connected ^{(Note 1)}

7

Enable input

EN

8

SG

Status good output

9

Analog dimming input

DCDIM

PWM

VLED

GND

10

11

12

13

14

15

16

17

18

19

20

-

PWM dimming input

LED voltage detection input

GND

SFON

TOFF

LVD

Short detection flag enable input

Resistor connection for OFF TIME setting

Low voltage detection setting input

Connecting capacitor for 5 V gate drive

Non connected ^{(Note 1)}

VREG

N.C.

BOOT

SW

Connecting boot strap capacitor for high side gate drive

Connecting to high side FET source

Heat radiation pad. The EXP-PAD is connected to GND.

SW

EXP-PAD

(Note 1) Leave this pin unconnected.

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Block Diagram

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Description of Blocks

1

Control Method (OFF TIME Control)

This product uses the OFF TIME control method for LED current control.

OFF TIME control consists of a comparator that detects the peak current of the LED and an OFF TIME generation

circuit that generates a set signal in a time according to the output voltage.

First turn on the high side FET and let the current flow through the inductor. Current flowing through the inductor flows

directly to the LED. The current flowing through the inductor is monitored by the voltage generated between the peak

current detection resistors R_SE, and when the set peak current is detected, the high side FET is turned off. After that,

when the OFF TIME set inside the circuit elapses according to the Vf voltage of the generated LED, the high side FET

is turned on again. By repeating this, LED current is controlled.

One characteristic of the OFF TIME control method is that it can reduce the output capacitor C_OUT. If the output

capacitor is increased, the charge of the output capacitor flows to the LED as the rush current when reducing the

number of LED lamps by matrix control, so it may cause flickering of the LED and breakdown beyond the rating. Also,

when switching the number of LED lights, delay in output responsiveness due to LC filter made up of inductor and

capacitor occurs. For this reason, it is necessary to minimize the output capacitor during matrix control.

VIN

0.2 V

SNSP

R_SE

SNSN

VPOW

BOOT

IL

reset

C_BOOT

L

SW

Driver

Logic

D1 C_OUT

set

GND

VLED

TOFF

OFF

TIME

R_TOFF

Figure 1. OFF TIME Control Method

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Description of Blocks – continued

2

Reference Voltage VREG (5 V Output)

The VREG voltage 5.0 V (Typ) is generated from the VB pin voltage and VREF block. This voltage is used as the

internal power supply of the IC and the FET drive. It also supplies current to the SG pin and the LVD pin connected

resistor. The total current supplied to the resistor must be 10 mA or less. Connect C_VREG= 2.2 µF as feedback

compensation capacitor to the VREG pin. Place ceramic capacitor close to the IC to minimize trace length to the

VREG pin also to the IC ground. Do not use the VREG as a power supply other than this IC.

When the EN pin voltage exceeds the threshold voltage V_ENH, the reference voltage generation circuit starts operating.

When the EN pin voltage falls below the threshold voltage V_ENL, all internal circuits including the reference voltage

generation circuit stop operating and the circuit current becomes 0 µA (Typ).

3

SG (Status Good Signal)

The SG pin has an open drain output and requires an external pull-up to the power supply for use. When the LED

driver is activated and the current control circuit detects the peak current three times, the SG pin is Hiz controlled. In

addition, when a failure is detected (UVLO, TSD, OCP, LED OPEN), the SG pin is controlled low. (See 7. Fault

Detection / Protection Functions.) This SG signal can be used as an enable signal for the Matrix SW driver. (For

applications using Matrix SW, refer to the application circuit example.)

Figure 2. Explanation of SG Signal Operation (When Switching the EN Pin Low/High)

4

Average LED Current Control

4.1 SECOMP (Peak current detection)

The voltage between the SNSP and SNSN pins is used to detect the peak current flowing through the inductor.

The detection resistor R_SEis connected between the SNSP pin and the SNSN pin, and the voltage between the

pins is adjusted to V_SNS= 200 mV (Typ). Therefore, the LED peak current I_{LED_MAX}can be set by the following

formula.

0.2

퐼_{퐿퐸퐷_푀퐴푋}

=

[A]

푅

푆ꢀ

ꢁ_ꢂ퐸: Peak current detection resistance

4.2 OFF TIME Control (OFF TIME Generation Circuit)

OFF TIME block generates the set signal of the time to depend on the VLED pin voltage V_VLED. When peak current

is detected, the high side FET is off, and the OFF TIME count starts. When OFF TIME passes, the set signal is

output, and the high side FET is turned on. Since the OFF TIME is generated according to the VLED pin voltage, it

varies under the control of the Matrix SW controller, but the ripple of the LED current is controlled to be constant.

The OFF TIME can be changed by the external resistor R_TOFFconnected to the TOFF pin, and the switching

frequency can be adjusted. The maximum time is set in OFF TIME (MAX OFF TIME Detection), and the set signal

is automatically output when counting 80 μs or more (same time as t_OPEN).

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4.2 OFF TIME Control (OFF TIME Generation Circuit) – continued

The OFF TIME (t_OFF) is set using the formula shown below.

푅

푉

푇ꢄꢅꢅ

푡_푂퐹퐹= 1.ꢃ5 × 1ꢃ⁻⁹

×

[s]

ꢆꢇꢀꢈ

ꢁ_ꢉ푂퐹퐹: External resistance value connected to the TOFF pin

ꢊ_푉퐿퐸퐷: LED Vf voltage (= VLED pin voltage)

t_OFFaffects the switching frequency f_SW. f_SWcan be determined according to the formula below.

푉

−푉

ꢋ

푆푁푆푃

ꢆꢇꢀꢈ

푓

ꢂ푊

=

×

[Hz]

푉

+푉

ꢌ

푆푁푆푃

푆퐵ꢈ

ꢄꢅꢅ

ꢁ_ꢉ푂퐹퐹: External resistance value connected to the TOFF pin

ꢊ_푉퐿퐸퐷: LED Vf voltage (= VLED pin voltage)

ꢊ

ꢂꢍꢂꢎ

: SNSP pin voltage

ꢊ

ꢂꢏ퐷

: Schottky barrier diode forward voltage

This formula shows parabolic characteristics and the switching frequency becomes maximum when V_VLED= V_SNSP

/

2.

The maximum value of the switching frequency f_{SW_MAX}is calculated by the formula below.

ꢐ

푉

푆푁푆푃

푓

=

[Hz]

ꢂ푊_푀퐴푋

ꢑꢒ

2×(푉

+푉

)×2.ꢋ0×ꢋ0 ×푅

푆푁푆푃

푆퐵ꢈ 푇ꢄꢅꢅ

ꢁ_ꢉ푂퐹퐹: External resistance value connected to the TOFF pin

ꢊ

ꢂꢍꢂꢎ

: SNSP pin voltage

ꢊ

ꢂꢏ퐷

: Schottky barrier diode forward voltage

Due to the circuit delay, f_{SW_MAX}will be lower than this calculation suggests.

Figure 3. Switching Frequency vs V_VLED

(V_SNSP= 30 V, V_SBD= 0.7 V, R_TOFF= 10 kΩ, 20 kΩ, 47 kΩ)

Using the above graph, determine the maximum switching frequency f_{SW_MAX}and R_TOFFfor a given V_SNSP

.

ꢐ

푉

푆푁푆푃

ꢁ_ꢉ푂퐹퐹

=

[Ω]

ꢑꢒ

2×(푉

+푉

)×2.ꢋ0×ꢋ0 ×ꢓ

푆푁푆푃

푆퐵ꢈ 푆ꢔ_ꢕꢖꢗ

ꢊ

ꢂꢍꢂꢎ

: SNSP pin voltage

ꢊ

ꢂꢏ퐷

: Schottky barrier diode forward voltage

4.3 DRV Logic (Output control logic)

The high side FET is controlled according to the output signal (reset) of the SECOMP circuit and the output signal

(set) of the OFF TIME circuit. The switching frequency can be adjusted.

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Description of Blocks – continued

5

Dimming Function

To adjust the LED current, the PWM dimming function and analog dimming function is integrated in this IC.

5.1 PWM Control (PWM Dimming)

The LED current ON/OFF is controlled by inputting a PWM signal to the PWM pin. It is ON control when PWM =

High and OFF control when PWM = Low. No additional FET are required for PWM control.

Figure 4. PWM Dimming Operation

5.2 DC Dimming (Analog Dimming)

If a derating in the current is desired, due to LED temperature, the analog dimming function can be used. The LED

peak current is adjusted according to the voltage applied to the DCDIM pin. If the DCDIM voltage V_DCDIMis above

1.0 V (Typ), the peak detection voltage V_SNSis 200 mV (Typ). If a lower voltage is applied, the peak detection

voltage will be reduced, as shown in the diagram below. If the analog dimming function is not used, connect the

DCDIM pin to the VREG pin with 10 kΩ or more.

Figure 5. Analog Dimming

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Description of Blocks – continued

6

Zero LED Operation

When driving Matrix SW such as dynamic indicator, all Matrix SW may be turned on and LED may be 0. At this time,

the current supplied from the LED driver does not flow to the LED but flows to the Matrix SW, and the switching

operation continues.

Figure 6. Current Path at Zero LED

6.1 Low Voltage Detection (LED Anode Low Voltage Detection Function)

BD18395EFV-M has the LVD (Low Voltage Detection) function in order to detect if the voltage of the VLED pin

which connects to the LED anode side goes down. When the voltage of the VLED pin becomes lower than the set

voltage when the SFON pin voltage V_SFON> 2.4 V, it acts as ground fault detection (SCP) on the LED anode side

and outputs the SG pin Low to notify abnormality. When the SFON pin voltage V_SFON< 0.6 V, the current drive

operation is continued while keeping the SG pin Hiz output. The detection voltage of LVD is set by the voltage

value externally input to the LVD pin. Connect external resistors R_LVDH, R_LVDLbetween the VREG pin and the GND

pin, and set arbitrarily according to Vf of LED.

Figure 7. How to Set the LVD Voltage

The low voltage detection voltage V_LVDis calculated by the following formula. The minimum VLED pin voltage

depends upon the number of LEDs and their Vf. The LVD detection voltage must be between 1.5 V and 2.75 V.

푅

ꢇꢆꢈꢇ

ꢊ

퐿푉퐷

= ꢊ_푅퐸퐺

×

[V]

푅

+푅

ꢇꢆꢈꢇ

ꢇꢆꢈ퐻

ꢊ_푅퐸퐺: VREG output voltage

_퐿푉퐷ꢘ, ꢁ_퐿푉퐷퐿: LVD pin connection resistance

ꢁ

The low voltage detection voltage V_LVDshould be set lower than a single LED Vf. Therefore, consider the variation

of LED Vf when setting the low voltage detection voltage. An example is shown below.

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6.1. Low Voltage Detection (LED Anode Low Voltage Detection Function) – continued

6.1.1

The Low Voltage Detection Voltage Setting Example (When Using the Matrix SW)

Conditions.

LED Forward Voltage

(Vf)

: Min 1.6 V, Max 2.4 V

(Including current range of used LED and temperature characteristics)

Number of LEDs

Average LED Current

LED Current Ripple

(N)

(I_{LED_AVE}) : 1.0 A

(ΔI_LED: 0.1 A

: 8

)

Matrix SW ON Resistance (R_{ON_MIN}) : 0.12 Ω/ch

Min voltage value of the LED anode side, in case of a single LED

ꢊ

퐿퐸퐷

= ꢊ ꢙ (퐼_{퐿퐸퐷_퐴푉퐸}ꢚ 훥퐼_퐿퐸퐷) × ꢁ_{푂ꢍ_푀ꢛꢍ}× (ꢜ ꢚ 1)

[V]

ꢓ

= 1.6 V + (1.0 A - 0.1 A) x 0.12 Ω x (8－1) = 2.356 V

Taking the dispersion (±5 %) of V_REGinto consideration, the low voltage detection voltage is set to 2.0 V.

Therefore, determine the resistance to be connected the LVD pin: R_LVDH= 30 kΩ, R_LVDL= 20 kΩ.

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Description of Blocks – continued

7

Malfunction Detection / Protective Functions

Detection conditions (Typ)

Detection/Protection

function

SG output during

detection

Operation during detection

High side FET OFF

Detection

Release

V_SNSP< 4.1 V

or

V_SNSP≥ 4.5 V

and

UVLO

TSD

V_B< 4.1 V

or

V_B≥ 4.5 V

and

SG = Low

V_REG< 3.8 V

V_REG≥ 4.0 V

Tj > 175 °C

I_VPOW> 3.5 A

I_TOFF> 0.5 mA

Tj ≤ 150 °C

I_VPOW≤ 3.5 A

I_TOFF≤ 0.5 mA

High side FET OFF

Overcurrent

protection

OCP

OFF TIME operation starts

after High side FET OFF

The TOFF

pin short protection

High side FET OFF

LED open detection High side FET ON time High side FET ON time

OFF TIME operation starts

after High side FET OFF

timer

> 80 μs

≤ 80 μs

SG = Low

(effective only when

SFON = High)

LED anode short

detection

V_LVD< Setting voltage

(1.50 V to 2.75 V)

V_LVD≥ Setting voltage

(1.50 V to 2.75 V)

-

7.1 Under Voltage Locked Out (UVLO)

UVLO is a protection circuit that prevents IC malfunction at power-on or power-off. This IC is equipped with 3

UVLO circuits: UVLO VB for the VB voltage, UVLO VREG for the VREG voltage and UVLO SNSP for the SNSP

voltage. When UVLO is detected, the switching operation stop, and the high side FET is turned off. Also, during

UVLO detection, the SG pin is set to Low output to notify the outside of an abnormality.

7.2 Thermal Protection Circuit (TSD Thermal Shutdown)

TSD is a protection circuit to prevent IC destruction due to abnormal heat generation.

The TSD stops switching at 175 ° C (Typ), recovers at 150 ° C (Typ), and starts switching operation again. Also,

during TSD detection, the SG pin is set to Low output to notify the outside of the abnormality.

7.3 Overcurrent Protection Circuit (OCP)

By detecting the current flowing between the VPOW pin and the SW pin and prevents destruction due to an excess

current higher than the tolerance of the high side FET, inductor or LED. When the OCP operates, it stops the

step-down switching operation and the high side FET turned off. Hence the output of the SW pin will be Low. The

step-down switching operation starts again when the OFF TIME, which depends on the VLED pin voltage, has

passed, after the output of the SW pin has become Low.

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7.3 Overcurrent Protection Circuit (OCP) – continued

If OCP is detected even once, the SG pin is set to Low output to notify the outside of the abnormality. If OCP is

detected twice when the SG pin is low output, it will be in a hiccup operation, and after 10 ms (Typ) of OCP

detection has elapsed, the step-down switching operation will start again. If the peak current detection comparator

operates three times in succession without detecting OCP, the SG pin returns from the Low state to the Hiz state.

Figure 8. OCP Detection Operation

7.4 LED Open Detection (LED OPEN)

An abnormality is detected when an open failure occurs in the LED or a connector opening to the LED board

occurs. Since no current flows through the current detection resistor when the LED is open, no peak current

detection signal is generated, and the high side FET is kept on. When 80 μs or more of the high side FET is turned

on, it recognizes the LED open state and outputs the reset signal to turn off the high side FET. Also, output the SG

pin Low to notify abnormality to the outside.

Figure 9. LED OPEN Detection Operation

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7

Malfunction Detection / Protective Functions – continued

7.5 TOFF Pin Short Detection Function

When the TOFF pin short-circuited with GND or when external resistor R_TOFFshort-circuited, the TOFF pin short

detection function detects abnormality. When the TOFF pin short detection function detects abnormality, the high

side FET is turned off, and the SG pin outputs Low.

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Absolute Maximum Ratings (Ta = 25 °C)

Parameter

Symbol

V_B

Rating

-0.3 to +72

Unit

V

Power Supply Voltage (VB)

Power Supply Voltage (SNSP)

VREG Pin Voltage

V_SNSP

-0.3 to +72

V

V_REG

-0.3 to +7 ≤ V_B+ 0.3

-0.3 to +72 ≤ V_B+ 0.3

-0.3 to +72 ≤ V_SNSP+ 0.3

-0.3 to +2

V

EN Pin Voltage

V_EN

V

VPOW, SNSN, SW, VLED Pin Voltage

SNSP to SNSN Pin Voltage

SNSP to VPOW Pin Voltage

BOOT Pin Voltage

V_POW, V_SNSN, V_SW, V_VLED

V_{SNSP_SNSN}

V_{SNSP_VPOW}

V_BOOT

V

-0.3 to +2

V

-0.3 to +72 ≤ V_SNSP+ 7

-0.3 to +7

V

BOOT to SW Pin Voltage

DCDIM, TOFF, LVD Pin Voltage

PWM, SFON, SG Pin Voltage

DCDIM Pin Input Current

Maximum Junction Temperature

Storage Temperature Range

V_{BOOT_SW}

V_DCDIM, V_TOFF, V_LVD

V_PWM, V_SFON, V_SG

I_DCDIM

V

-0.3 to +7 ≤ V_REG+ 0.3

-0.01 to +10

V

mA

°C

Tjmax

150

Tstg

-55 to +150

Caution 1: Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit

between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is

operated over the absolute maximum ratings.

Caution 2: Should by any chance the maximum junction temperature rating be exceeded the rise in temperature of the chip may result in deterioration of the

properties of the chip. In case of exceeding this absolute maximum rating, design a PCB with thermal resistance taken into consideration by

increasing board size and copper area so as not to exceed the maximum junction temperature rating.

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Thermal Resistance ^{(Note 1)}

Thermal Resistance (Typ)

Parameter

Symbol

Unit

1s ^{(Note 3)}

2s2p ^{(Note 4)}

HTSSOP-B20

Junction to Ambient

Junction to Top Characterization Parameter ^{(Note 2)}

θ_JA

143.0

8

26.8

4

°C/W

Ψ_JT

(Note 1) Based on JESD51-2A (Still-Air).

(Note 2) The thermal characterization parameter to report the difference between junction temperature and the temperature at the top center of the outside

surface of the component package.

(Note 3) Using a PCB board based on JESD51-3.

(Note 4) Using a PCB board based on JESD51-5, 7.

Layer Number of

Measurement Board

Material

Board Size

Single

FR-4

114.3 mm x 76.2 mm x 1.57 mmt

Top

Copper Pattern

Thickness

70 μm

Footprints and Traces

Layer Number of

Measurement Board

Thermal Via ^{(Note 5)}

Material

Board Size

114.3 mm x 76.2 mm x 1.6 mmt

2 Internal Layers

Pitch

Diameter

4 Layers

FR-4

1.20 mm

Φ0.30 mm

Top

Copper Pattern

Bottom

Thickness

70 μm

Copper Pattern

Thickness

35 μm

Copper Pattern

Thickness

70 μm

Footprints and Traces

74.2 mm x 74.2 mm

(Note 5) This thermal via connects with the copper pattern of all layers.

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Recommended Operating Conditions

Parameter

Symbol

Min

Typ

Max

Unit

Operating Voltage (VB)^{(Note 1)(Note 2)}

Operating Voltage (SNSP)^{(Note 1)((Note 2)}

Operating Temperature

V_B

4.5

-40

0

13.0

70.0

+125

60

V

V_SNSP

Topr

V_VLED

I_SW

13.0

-

°C

V

VLED Voltage

LED Average Current Setting

VREG Output Current

0.1

-

2.0

A

I_VREG

I_TOFF

f_PWM

V_LVD

10

mA

μA

Hz

V

TOFF Output Current

2

250

2000

2.75

PWM Frequency Input

100

1.50

Low Voltage Detection Voltage

(Note 1) ASO should not be exceeded.

(Note 2) At start-up time, apply the voltage 5 V or more once. The value is the voltage range after the temporary rise to 5 V or more.

Recommended Setting Parts Range

Parameter

Symbol

Min

Typ

Max

Unit

Capacitor Connecting to VREG Pin^{(Note 3)}

Capacitor Connecting to VLED Pin^{(Note 3)}

Capacitor for BOOST ^{(Note 3)}

Inductor Set Range

C_VREG

C_VLED

C_{BOOT_SW}

L

1.0

10

2.2

100

0.22

220

47

4.7

1000

0.33

470

μF

nF

μF

μH

kΩ

0.10

22

Resistor for SG Pin

R_SG

10

200

(Note 3) Capacitor capacitance should be set considering temperature characteristics, DC bias characteristics, etc.

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Electrical Characteristics

(Unless otherwise specified V_B= 13 V, V_SNSP= 13 V, V_EN= 5 V, Tj = 25 °C)

Limit

Parameter

Symbol

Unit

Conditions

Min

Typ

Max

[Total]

VB Circuit Current

I_CCVB

I_CCSNSP

I_STVB

-

2.5

0.4

0

6.0

2.0

10

mA

μA

V

V_PWM= 5 V, V_DCDIM= 5 V

SNSP Circuit Current

-

V_PWM= 5 V, V_DCDIM= 5 V

VB Standby Current

-

V_EN= 0 V

V_Bfalling

V_Brising

-

SNSP Standby Current

VB UVLO Detection Voltage

VB UVLO Release Voltage

VB UVLO Hysteresis Voltage

SNSP UVLO Detection Voltage

SNSP UVLO Release Voltage

SNSP UVLO Hysteresis Voltage

[Reference Voltage]

I_STSNSP

0

10

V_BUVD

3.75

4.15

-

4.10

4.50

0.4

4.10

4.50

0.4

4.45

4.85

-

V_BUVR

V

V_BUVHYS

V_SNSPUVD

V_SNSPUVR

V_SNSPUVHYS

V

3.75

4.15

-

4.45

4.85

-

V

V_SNSPfalling

V_SNSPrising

-

V

VREG Voltage

V_REG

4.75

5.00

10

5.25

V

C_VREG= 2.2 μF

C_VREG= 2.2 μF,

V_B= 13 V to 70 V

C_VREG= 2.2 μF

I_VREG= -10 mA

VREG Line Regulation

VREG Load Regulation

V_LINEREG

-

mV

V_LOADREG

4.75

5.00

5.25

V

[EN]

EN Pin Input Current

EN Threshold Voltage H (Rising)

EN Threshold Voltage L (Falling)

EN Hysteresis Voltage

[PWM]

-

2.4

-

7

-

15

-

μA

V

V_EN= 5 V

V_ENrising

V_ENfalling

-

I_EN

V_ENH

V_ENL

-

0.6

-

V

-

50

mV

V_ENHYS

PWM Pin Input Current

PWM Threshold Voltage H (Rising)

PWM Threshold Voltage L (Falling)

PWM Hysteresis Voltage

[DCDIM]

-

2.0

-

50

100

μA

V

V_PWM= 5 V

V_PWMrising

V_PWMfalling

-

I_PWM

V_PWMH

V_PWML

-

0.8

-

V

-

0.25

V

V_PWMHYS

DCDIM Gain

GA_DCDIM

V_DCDIM

I_DCDIM

-

0.2

1.00

3.5

-

V/V

V

V_SNS/ V_DCDIM

DCDIM Voltage

-

DCDIM Pin Output Current

1.0

7.0

μA

V_DCDIM= GND

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BD18395EFV-M

Electrical Characteristics - continued

(Unless otherwise specified V_B= 13 V, V_SNSP= 13 V, V_EN= 5 V, Tj = 25 °C)

Limit

Parameter

Symbol

Unit

Conditions

Min

Typ

Max

[Status Good]

I_SGLK

V_SGL

-

0

10

μA

V

V_SG= 5 V

SG Output Leak Current

SG Pin Low Output Voltage

[SFON (Short Flag ON)]

SFON Threshold Voltage H(Rising)

SFON Threshold Voltage L(Falling)

SFON Hysteresis Voltage

[Low Voltage Detection]

LVD Threshold Voltage

0.1

0.4

I_SG= 0.5 mA input

V_SFONH

V_SFONL

2.4

-

0.6

-

V

V_SFONrising

V_SFONfalling

-

V_SFONHYS

50

mV

V_LVDTH

I_LVD

1.9

2.0

0

2.1

10

V

V_VLED= 2 V

V_LVD= 2 V

LVD Pin Input Current

-

μA

[Buck Converter]

MOS FET ON Resistance between

the VPOW and SW Pins

MOS FET ON Resistance between

the SW and GND Pins

R_ONH

R_ONL

-

170

6

500

15

mΩ

Ω

I_SW= -100 mA

I_SW= 10 mA

Ta = 25 °C,

V_VLED= 5 V,

196

200

205

mV

V_SNS= V_SNSP- V_SNSN

Ta = -40 °C to +125 °C,

V_VLED= 5 V,

LED Peak Current Detection Voltage

V_SNS

194

200

206

mV

V_SNS= V_SNSP- V_SNSN

V_VLED

t_OFF

x

44.40

49.35

54.20

Vμs

R_TOFF= 47 kΩ

V_VLEDx t_OFF

I_VLED

0

-

15

200

80

30

μA

ns

μs

A

V_PWM= 5 V, V_VLED= 5 V

VLED Pin Input Current

SW Pin Minimum ON Time

LED Open Detection Time

Overcurrent Detection

HICCUP Time

t_ONMIN

t_OPEN

I_OCP

-

60

3.0

-

100

3.5

10

-

t_HICCUP

ms

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BD18395EFV-M

Typical Performance Curves (Reference Data)

10

6

5

4

3

2

1

0

-40 °C

8

+25 °C

+150 °C

+25 °C

+150 °C

6

4

2

0

10

20

30

40

50

60

70

0

10

20

30

40

50

60

70

VB Pin Voltage [V]

Figure 10. VB Standby Current vs VB Pin Voltage

Figure 11. VB Circuit Current vs VB Pin Voltage

10

2.0

-40 °C

8

-40 °C

1.6

+25 °C

+150 °C

6

+150 °C

1.2

4

2

0

0.8

0.4

0.0

0

10

20

30

40

50

60

70

0

10

20

30

40

50

60

70

SNSP Pin Voltage [V]

Figure 12. SNSP Standby Current vs SNSP Pin Voltage

Figure 13. SNSP Circuit Current vs SNSP Pin Voltage

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BD18395EFV-M

Typical Performance Curves (Reference Data) - continued

4.9

4.8

4.7

4.6

4.5

4.4

4.3

4.2

4.1

4.0

3.9

3.8

4.9

Release Voltage

Detection Voltage

Release Voltage

Detection Voltage

4.8

4.7

4.6

4.5

4.4

4.3

4.2

4.1

4.0

3.9

3.8

-50 -25

0

25 50 75 100 125 150

-50 -25

0

25 50 75 100 125 150

Ambient Temperature [℃]

Figure 14. VB UVLO Detection/Release Voltage vs

Ambient Temperature

Figure 15. SNSP UVLO Detection/Release Voltage vs

Ambient Temperature

5.25

5.20

5.15

5.10

5.05

5.00

4.95

4.90

4.85

4.80

4.75

5.25

5.20

5.15

5.10

5.05

5.00

4.95

4.90

4.85

4.80

4.75

-50 -25

0

25 50 75 100 125 150

0

10

20

30

40

50

60

70

Ambient Temperature [℃]

VB Pin Voltage [V]

Figure 16. VREG Voltage vs VB Pin Voltage

Figure 17. VREG Voltage vs Ambient Temperature

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BD18395EFV-M

Typical Performance Curves (Reference Data) - continued

1.020

1.015

1.010

1.005

1.000

0.995

0.990

0.985

1.020

1.015

1.010

1.005

1.000

0.995

0.990

0.985

0.980

-50 -25

0

25 50 75 100 125 150

4 10 16 22 28 34 40 46 52 58 64 70

VB Pin Voltage [V]

Ambient Temperature [℃]

Figure 18. DCDIM Voltage vs VB Pin Voltage

Figure 19. DCDIM Voltage vs Ambient Temperature

500

400

300

200

100

0

15

12

9

6

3

0

-50 -25

0

25 50 75 100 125 150

-50 -25

0

25 50 75 100 125 150

Ambient Temperature [℃]

Figure 20. MOS FET ON Resistance between the VPOW

and SW Pins vs Ambient Temperature

(I_SW= -100 mA)

Figure 21. MOS FET ON Resistance between the SW and

GND Pins vs Ambient Temperature

(I_SW= 10 mA)

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BD18395EFV-M

Typical Performance Curves (Reference Data) - continued

100

95

90

85

80

75

70

65

60

206

204

202

200

198

196

194

-50 -25

0

25 50 75 100 125 150

-50 -25

0

25 50 75 100 125 150

Ambient Temperature [℃]

Figure 22. LED Peak Detection Voltage vs Ambient

Temperature

Figure 23. LED Open Detection Time vs Ambient

Temperature

4.0

VPOW = 5 V

3.9

VPOW = 30 V

3.8

VPOW = 60 V

3.7

3.6

3.5

3.4

3.3

3.2

3.1

3.0

-50 -25

0

25 50 75 100 125 150

Ambient Temperature [℃]

Figure 24. Overcurrent Detection vs Ambient Temperature

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BD18395EFV-M

Typical Performance Curves (Reference Data) - continued

1.03

1.02

1.01

1.00

0.99

0.98

0.97

100

14 LED

16 LED

12 LED

10 LED

8 LED

6 LED

95

90

85

80

75

70

4 LED

16 LED

14 LED

12 LED

10 LED

8 LED

6 LED

4 LED

2 LED

L = 100 μH

I_LED= 1 A

R_TOFF= 20 kΩ

L = 100 μH

R_TOFF= 20 kΩ

0

5 10 15 20 25 30 35 40 45 50 55 60

SNSP Pin Voltage [V]

0

5 10 15 20 25 30 35 40 45 50 55 60

SNSP Pin Voltage [V]

Figure 25. Efficiency vs SNSP Pin Voltage

(V_B= 13 V, I_LED= 1 A, R_TOFF= 20 kΩ, L = 100 μH)

Figure 26. LED Current vs SNSP Pin Voltage

(V_B= 13 V, R_TOFF= 20 kΩ, L = 100 μH)

700

600

EN (5.0 V/div)

10 kΩ

500

SG (5.0 V/div)

SW (5.0 V/div)

20 kΩ

47 kΩ

400

300

200

100

I_LED(500 mA/div)

Time (20 μs/div)

0

0 2 4 6 8 1012141618202224262830

VLED Pin Voltage: V_VLED[V]

Figure 27. Frequency vs VLED Pin Voltage

(V_SNSP= 30 V, R_TOFF= 10 kΩ, 20 kΩ, 47 kΩ)

Figure 28. EN Start-up

(V_B= 13 V, V_SNSP= 13 V, L = 47 μH, I_LED= 1 A)

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BD18395EFV-M

Typical Performance Curves (Reference Data) - continued

PWM (5.0 V/div)

SW (5.0 V/div)

PWM (5.0 V/div)

SW (5.0 V/div)

I_LED(500 mA/div)

Time (20 μs/div)

I_LED(500 mA/div)

Time (200 μs/div)

Figure 29. PWM Dimming

Figure 30. PWM Dimming

(V_B= 13 V, V_SNSP= 13 V, L = 47 μH, I_LED= 1 A,

PWM = 1 kHz, Duty = 50 %)

(V_B= 13 V, V_SNSP= 13 V, L = 47 μH, I_LED= 1 A,

PWM = 1 kHz, Duty = 0.5 %)

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BD18395EFV-M

Timing Chart

1. Start-up Sequence Controlled EN

(Start-up sequence of VB/SNSP is arbitrary)

Figure 31. Timing Chart (ON/OFF Control with the EN Pin)

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BD18395EFV-M

Timing Chart – continued

2. Start-up Sequence for SNSP Rising 1 [EN Tied to VB]

(VB Start-up → SNSP Start-up / SNSP Shutdown → VB Shutdown)

Figure 32. Timing Chart (VB Start-up → SNSP Start-up)

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BD18395EFV-M

Timing Chart – continued

3. Start-up Sequence for SNSP Rising 2 [EN Tied to VB]

(SNSP Start-up → VB Start-up / VB Shutdown → SNSP Shutdown)

Figure 33. Timing Chart (SNSP Start-up → VB Start-up)

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BD18395EFV-M

Application Examples

1 3 LEDs (White), I_LED= 2 A Setting

Figure 34. V_B= 13 V, I_LED= 2 A, LED = 3 Series, Frequency = 210 kHz

Recommended Parts List

Product

Maker

Parts

IC

Symbol

Parts Name

Value

Unit

U1

R_SE

BD18395EFV-M

LTR18

-

91

47

10

11

-

ROHM

murata

ROHM

TDK

mΩ

kΩ

μF

-

R_SG

MCR01

R_DCDIM

R_TOFF

R_LVDH

R_LVDL

C_VB1

C_VB2

C_BOOT

C_VREG

C_OUT

D

MCR01

Resistor

MCR01

30

20

10

0.1

0.22

2.2

0.01

-

MCR01

GCM32EC71H106KA

GCM155R71H104KE

GCM155R71C224KE

GCM21BR71E225KA

GCM155R71H103KA

RBR5LAM60ATF

CLF12577NIT-330M-D

Capacitor

Diode

Inductor

L

33

μH

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BD18395EFV-M

Application Examples - continued

2 8 LEDs (White), I_LED= 1 A Setting

Figure 35. V_IN= 48 V, V_B= 13 V, I_LED= 1 A, LED = 8 Series, Frequency = 250 kHz

Recommended Parts List

Product

Maker

Parts

IC

Symbol

Parts Name

Value

Unit

U1

R_SE

BD18395EFV-M

LTR18

-

ROHM

Murata

ROHM

TDK

182

47

mΩ

kΩ

μF

-

R_SG

MCR01

R_DCDIM

R_TOFF

R_LVDH

R_LVDL

C_VIN

C_VB

MCR01

10

Resistor

MCR01

40

MCR01

30

MCR01

20

GCM32EC71H106KA

GCM21BR71C225KA

GCM155R71C224KE

GCM21BR71E225KA

GCM155R71H103KA

RB058LAM100TF

CLF12577NIT-221M-D

10

2.2

0.22

2.2

0.01

-

Capacitor

C_BOOT

C_VREG

C_OUT

D

Diode

Inductor

L

220

μH

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BD18395EFV-M

Application Examples - continued

3 16 LEDs (Yellow), I_LED= 350 mA Setting

Figure 36. V_IN= 60 V, V_B= 13 V, I_LED= 350 mA, LED = Yellow 16 Series, Frequency = 350 kHz

Recommended Parts List

Product

Maker

Parts

IC

Symbol

Parts Name

Value

Unit

U1

R_SE

BD18395EFV-M

LTR18

-

ROHM

Murata

ROHM

TDK

510

47

mΩ

kΩ

μF

-

R_SG

MCR01

R_DCDIM

R_TOFF

R_LVDH

R_LVDL

C_VIN

C_VB

MCR01

10

Resistor

MCR01

36

MCR01

39

MCR01

22

GCM32DC72A475KE

GCM21BR71C225KA

GCM155R71C224KE

GCM21BR71E225KA

GCM155R71H103KA

RB058LAM100TF

CLF12577NIT-471M-D

4.7

2.2

0.22

2.2

0.01

-

Capacitor

C_BOOT

C_VREG

C_OUT

D

Diode

Inductor

L

470

μH

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BD18395EFV-M

Application Examples - continued

4 8 LEDs (Yellow), I_LED= 300 mA, with the Matrix SW Setting

Figure 37. Use BD18395EFV-M and BD18362EFV-M ^{(Note 1)}8 ch Dynamic Indicator

{BD18395EFV-M: V_IN= 24 V, V_B= 13 V, I_LED= 300 mA, LED = Yellow 8 Series (18.4 V), Frequency = 310 kHz}

{BD18362EFV-M: 8 ch Setting, The Sequential Lighting Phase Time t_PS1= 15 ms, The Sequential Lighting Start-up

Delay Time t_DLY= 1.25 ms}

- Application of Dynamic Indicator (Use BD18395EFV-M and BD18362EFV-M ^{(Note 1)}

)

The BD18395EFV-M has SG function (status good), and by using this function, it is easy to design the dynamic indicator

application using BD18362EFV-M (8 ch Matrix SW).

· Connect the SG signal of BD18362EFV-M to the EN pin of BD18395EFV-M

· Connect the SG signal of BD18395EFV-M to the SETDLY pin of BD18362EFV-M

By starting the operation by connecting the above two points

Start operation

→ All the SW of BD18362EFV-M are ON (the SG pin of BD18362EFV-M = High).

→ The EN pin of BD18395EFV-M becomes High, so the driver operation starts.

→ Driver operation is normal, the SG pin of BD18395EFV-M = High.

→ The SETDLY pin of BD18362EFV-M becomes High, so sequential operation is started.

This prevents chattering at LED startup due to variation in startup time setting.

(Note 1) Please refer to datasheet for usage of BD18362EFV-M.

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BD18395EFV-M

4 8 LEDs (Yellow), I_LED= 300 mA, with the Matrix SW Setting - continued

Recommended Parts List

Product

Maker

Parts

IC

Symbol

Parts Name

Value

Unit

U1

R_SE

BD18395EFV-M

LTR18

-

510

47

-

ROHM

Murata

ROHM

TDK

mΩ

kΩ

μF

-

R_SG1

R_DCDIM

R_TOFF

R_LVDH

R_LVDL

C_VIN

MCR01

10

Resistor

MCR01

13

MCR01

39

MCR01

22

GCM32EC71H106KA

GCM21BR71C225KA

GCM155R71C224KE

GCM21BR71E225KA

GCM155R71H103KA

RBR5LAM60ATF

CLF12577NIT-221M-D

BD18362EFV-M

MCR01

4.7

2.2

0.22

2.2

0.01

-

C_VB

Capacitor

C_BOOT

C_VREG

C_OUT

D

Diode

Inductor

IC

L

220

-

μH

-

U2

ROHM

Murata

R_HAZ

R_SET

R_CMPLT

R_FLAG

R_SG2

C_VCC1

C_VCC2

C_VREG2

C_SETDLY

C_SETCLK

C_CF

10

kΩ

μF

MCR01

10

Resistor

MCR01

22

MCR01

22

MCR01

22

GCM32EC71H106KA

GCM155R71H104KE

GCM21BR71C225KA49

GCM155R71H473KE01

GCM2162C1K472JA01

GCJ188R71H473KA12

10

0.1

2.2

0.047

0.0047

0.047

Capacitor

C_CP

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BD18395EFV-M

Selection of Parts Externally Connected

Please follow the below procedure for selecting application parts.

1. Confirm Usage Conditions.

(Power supply voltage, LED current, number of LED lamps,

oscillating frequency, etc.).

2. Selection of the Resistance R_TOFFto Set Oscillating Frequency.

3. Selection of the Inductor.

If the loss exceeds the

tolerance, review the

selected parts.

4. Selection of the Peak Current Detection Resistance R_SE.

5. Calculate Power Consumption.

6. Setting the Low Voltage Detection.

7. Selection of the Input Capacitor and the Output Capacitor.

8. Selection of the Schottky Barrier Diode.

9. Confirm Operation in Actual Application.

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BD18395EFV-M

Selection of Parts Externally Connected - continued

1. Confirm Usage Conditions

Confirm the following usage conditions before proceeding with calculations.

1.1

1.2

1.3

1.4

1.5

LED current (Average)

Power supply voltage

VLED voltage

Oscillating frequency

Schottky barrier diode forward direction voltage

: I_{LED_AVE}

: V_SNSP

: V_VLED

: f_SW

: V_SBD

2. Selection of the Resistance R_TOFFto Set Oscillating Frequency

Calculate oscillating frequency from power supply voltage V_SNSPand the VLED pin voltage V_VLED.Oscillating frequency

can be adjusted by the external resistance R_TOFF. Oscillating frequency, f_SWcan be calculated by the following formula:

푉

−푉

ꢋ

푉

−푉

푉

푆푁푆푃

ꢆꢇꢀꢈ

푆푁푆푃

ꢆꢇꢀꢈ

ꢑꢒ

푓

ꢂ푊

=

×

=

×

ꢋ.0ꢝ×ꢋ0 ×푅

푇ꢄꢅꢅ

[Hz]

푉

+푉

ꢌ

푉

+푉

푆푁푆푃

푆퐵ꢈ

ꢄꢅꢅ

푆푁푆푃

푆퐵ꢈ

ꢁ_ꢉ푂퐹퐹

ꢊ_푉퐿퐸퐷

: External resistance value to connect at the TOFF pin

: LED Vf voltage (= VLED pin voltage)

ꢊ

ꢂꢍꢂꢎ

: SNSPpin voltage

ꢊ

ꢂꢏ퐷

: External Schottky barrier diode forward direction voltage

When used in combination with Matrix SW controller, while switching LEDs, the frequency becomes minimum with either

the minimum number of LED lights (other than zero) or the maximum number of LED lights. Also, when V_VLED= V_SNSP/ 2,

the oscillation frequency becomes maximum.

3. Selection of the Inductor

Calculate the desired LED current ripple I_{LED_RIPPLE}by selecting an optimal inductor value.

Recommended output ripple current is within 5 % to 20 % of desired LED current.

Value of inductor can be calculated by substituting the values of R_TOFFfrom step 2 above and desired LED current ripple,

in the following formula:

푉

ꢆꢇꢀꢈ

+푉

푉

ꢆꢇꢀꢈ

+푉

푅

푉

푇ꢄꢅꢅ

퐼_{퐿퐸퐷_푅ꢛꢎꢎ퐿퐸}

=

^푆퐵ꢈ× 푡_푂퐹퐹

=

^푆퐵ꢈ× 1.ꢃ5 × 1ꢃ⁻⁹

×

[A]

퐿

ꢆꢇꢀꢈ

ꢁ_ꢉ푂퐹퐹

ꢊ_푉퐿퐸퐷

: External resistance value to connect at the TOFF pin

: LED Vf voltage (= VLED pin voltage)

: External Schottky barrier diode forward direction voltage

: Inductor value

ꢊ

ꢂꢏ퐷

ꢞ

4. Selection of the Peak Current Detection Resistance R_SE

Calculate the average LED current I_{LED_AVE}and select the value of the peak current detection resistor R_SE

.

Calculate the LED average current based on the R_TOFFand L values obtained in 2 and 3 above and calculate the peak

current detection resistance value.

The average LED current I_{LED_AVE}is calculated by the following formula:

0.2

ꢚ ^ꢛ

[A]

ꢇꢀꢈ_ꢟꢠ푃푃ꢇꢀ

퐼_{퐿퐸퐷_퐴푉퐸}

=

푅

2

푆ꢀ

ꢁ_ꢂ퐸

퐼_{퐿퐸퐷_푅ꢛꢎꢎ퐿퐸}

: Peak current detection resistance

: LED ripple current

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Selection of Parts Externally Connected - continued

5. Calculate Power Consumption

Calculate power consumption from input voltage, number of LEDs, LED average current and oscillating frequency.

Use the following formulae to calculate IC power consumption:

ꢡ_{ꢉ푂ꢉ퐴퐿}= ꢡ_퐹퐸ꢉꢙ ꢡ_{푝푟푒퐷푅푉}ꢙ ꢡ

[W]

ꢛ퐶퐶

ꢡ_퐹퐸ꢉ= ꢡ ꢙ ꢡ ꢙ ꢡ ꢙ ꢡ

ꢡ_{푝푟푒퐷푅푉}= 푄_푔× ꢊ_푅퐸퐺× 푓 [W]

ꢂ푊

ꢌ푟

ꢌꢓ

ꢌ표푛

ꢌ표ꢓꢓ

ꢡ

ꢛ퐶퐶

= ꢊ_ꢏ× 퐼_퐶퐶푉ꢏꢙ ꢊ

× 퐼_{퐶퐶ꢂꢍꢂꢎ}[W]

ꢡ = ꢊ

× 퐼_{퐿_퐴푉퐸}× ꢃ.5 × 푡_푟× 푓

[W]

ꢂꢍꢂꢎ

ꢌ푟

ꢂꢍꢂꢎ

ꢂ푊

푉

+푉

ꢆꢇꢀꢈ

푆퐵ꢈ

ꢡ = ꢊ

× 퐼_{퐿_퐴푉퐸}× ꢃ.5 × 푡_ꢓ× 푓

[W]

ꢡ = 퐼_{퐿_퐴푉퐸}× 퐼_{퐿_퐴푉퐸}× ꢁ_푂ꢍꢘ

ꢌ표푛

×

[W]

ꢌꢓ

ꢂꢍꢂꢎ

ꢂ푊

+푉

푆푁푆푃

푆퐵ꢈ

ꢐ

푉

−푉

푆퐵ꢈ

푆푁푆푃 ꢆꢇꢀꢈ

ꢡ

ꢌ표ꢓꢓ

=

×

[W]

푅

푉

+푉

푆푁푆푃 푆퐵ꢈ

ꢄ푁ꢇ

ꢡ_{ꢉ푂ꢉ퐴퐿}

: Total power consumption

: SNSPvoltage

: VB voltage

ꢊ

ꢂꢍꢂꢎ

ꢊ_ꢏ

ꢊ_푉퐿퐸퐷

ꢊ_푅퐸퐺

: VLED voltage

: VREG voltage

ꢊ

: External schottky barrier diode forward direction voltage

:Average inductor current

: SNSPcurrent

: VB supply current

: Internal gate charge (1.4 nC)

ꢂꢏ퐷

퐼_{퐿_퐴푉퐸}

퐼_{퐶퐶ꢂꢍꢂꢎ}

퐼_퐶퐶푉ꢏ

푄_푔

푓

ꢂ푊

: Oscillating frequency

ꢁ_푂ꢍꢘ

ꢁ_푂ꢍ퐿

푡_푟

: MOS FETON resistance between the VPOW and SW pins

: MOS FETON resistance between the SW and GND pins

: SW pin rising time

푡_ꢓ

: SW pin falling time

6. Setting the Low Voltage Detection

If you have a situation where you are using the Matrix SW controller and all the switches are on and the LEDs are 0, you

need to set the low voltage detection voltage V_LVDto detect that the LEDs are 0. The low voltage detection voltage is set

by the voltage value input from the outside to the LVD pin. Connect external resistors R_LVDHand R_LVDLbetween the

VREG pin and the GND pin. Also, set the low voltage detection voltage to be in the range of 1.5 V to 2.75 V. It must be

set lower than the Vf voltage when one LED is lit.

The low voltage detection voltage V_LVDis calculated by the following formula.

푅

ꢇꢆꢈꢇ

ꢊ

퐿푉퐷

= ꢊ_푅퐸퐺

×

[V]

푅

+푅

ꢇꢆꢈꢇ

ꢇꢆꢈ퐻

Figure 38. How to Set the Low Voltage Detection

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Selection of Parts Externally Connected - continued

7. Selection of the Input Capacitor and the Output Capacitor

A capacitor is required on the input side of switching type LED driver as peak current flows between input and output.

Capacitor value of 4.7 μF or more with ESR of 100 mΩ or less, is recommended at the input. Capacitor beyond this

range may cause excessive ripple on the input, causing malfunction of the IC.

8. Selection of the Schottky Barrier Diode

In the switching type Buck LED driver, when the High side FET is turned off, the current is supplied from the external

Schottky barrier diode. Therefore, select a schottky barrier diode whose current capacity is sufficiently higher than the

LED current. Also, if the Vf voltage of the diode is high, not only the power loss will increase, but also the SW pin voltage

will become a negative voltage, which may cause the circuit inside the LSI to malfunction. Therefore, a diode with as low

a Vf voltage as possible is recommended.

9. Confirm Operation in Actual Application

The characteristics will change depending on the LED current, input voltage, output voltage, inductor value, load

capacity, switching frequency, mounting pattern, etc., so be sure to check with the actual application.

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I/O Equivalence Circuit

1

2

4

19

20

VPOW

SNSP

SW

9

DCDIM

SW

3

SNSN

10

11

13

14

PWM

5

16

VB

VREG

VLED

SFON

TOFF

7

EN

8

SG

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I/O Equivalence Circuit - continued

15

LVD

18

BOOT

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Operational Notes

1. Reverse Connection of Power Supply

Connecting the power supply in reverse polarity can damage the IC. Take precautions against reverse polarity when

connecting the power supply, such as mounting an external diode between the power supply and the IC’s power

supply pins.

2. Power Supply Lines

Design the PCB layout pattern to provide low impedance supply lines. Furthermore, connect a capacitor to ground at

all power supply pins. Consider the effect of temperature and aging on the capacitance value when using electrolytic

capacitors.

3. Ground Voltage

Ensure that no pins are at a voltage below that of the ground pin at any time, even during transient condition. However,

pins that drive inductive loads (e.g. motor driver outputs, DC-DC converter outputs) may inevitably go below ground

due to back EMF or electromotive force. In such cases, the user should make sure that such voltages going below

ground will not cause the IC and the system to malfunction by examining carefully all relevant factors and conditions

such as motor characteristics, supply voltage, operating frequency and PCB wiring to name a few.

4. Ground Wiring Pattern

When using both small-signal and large-current ground traces, the two ground traces should be routed separately but

connected to a single ground at the reference point of the application board to avoid fluctuations in the small-signal

ground caused by large currents. Also ensure that the ground traces of external components do not cause variations

on the ground voltage. The ground lines must be as short and thick as possible to reduce line impedance.

5. Recommended Operating Conditions

The function and operation of the IC are guaranteed within the range specified by the recommended operating

conditions. The characteristic values are guaranteed only under the conditions of each item specified by the electrical

characteristics.

6. Inrush Current

When power is first supplied to the IC, it is possible that the internal logic may be unstable and inrush current may flow

instantaneously due to the internal powering sequence and delays, especially if the IC has more than one power

supply. Therefore, give special consideration to power coupling capacitance, power wiring, width of ground wiring, and

routing of connections.

7. Testing on Application Boards

When testing the IC on an application board, connecting a capacitor directly to a low-impedance output pin may

subject the IC to stress. Always discharge capacitors completely after each process or step. The IC’s power supply

should always be turned off completely before connecting or removing it from the test setup during the inspection

process. To prevent damage from static discharge, ground the IC during assembly and use similar precautions during

transport and storage.

8. Inter-pin Short and Mounting Errors

Ensure that the direction and position are correct when mounting the IC on the PCB. Incorrect mounting may result in

damaging the IC. Avoid nearby pins being shorted to each other especially to ground, power supply and output pin.

Inter-pin shorts could be due to many reasons such as metal particles, water droplets (in very humid environment) and

unintentional solder bridge deposited in between pins during assembly to name a few.

9. Unused Input Pins

Input pins of an IC are often connected to the gate of a MOS transistor. The gate has extremely high impedance and

extremely low capacitance. If left unconnected, the electric field from the outside can easily charge it. The small

charge acquired in this way is enough to produce a significant effect on the conduction through the transistor and

cause unexpected operation of the IC. So unless otherwise specified, unused input pins should be connected to the

power supply or ground line.

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Operational Notes – continued

10. Regarding the Input Pin of the IC

This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them

isolated. P-N junctions are formed at the intersection of the P layers with the N layers of other elements, creating a

parasitic diode or transistor. For example (refer to figure below):

When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.

When GND > Pin B, the P-N junction operates as a parasitic transistor.

Parasitic diodes inevitably occur in the structure of the IC. The operation of parasitic diodes can result in mutual

interference among circuits, operational faults, or physical damage. Therefore, conditions that cause these diodes to

operate, such as applying a voltage lower than the GND voltage to an input pin (and thus to the P substrate) should be

avoided.

Resistor

Transistor (NPN)

Pin A

Pin B

B

E

C

Pin A

B

C

E

P

P⁺

N

P⁺

P

P⁺

N

Parasitic

Elements

Parasitic

Elements

P Substrate

GND GND

P Substrate

GND

Parasitic

Elements

Parasitic

Elements

N Region

close-by

Example of Monolithic IC Structure

11. Ceramic Capacitor

When using a ceramic capacitor, determine a capacitance value considering the change of capacitance with

temperature and the decrease in nominal capacitance due to DC bias and others.

12. Thermal Shutdown Circuit (TSD)

This IC has a built-in thermal shutdown circuit that prevents heat damage to the IC. Normal operation should always

be within the IC’s maximum junction temperature rating. If however the rating is exceeded for a continued period, the

junction temperature (Tj) will rise which will activate the TSD circuit that will turn OFF power output pins. When the Tj

falls below the TSD threshold, the circuits are automatically restored to normal operation.

Note that the TSD circuit operates in a situation that exceeds the absolute maximum ratings and therefore, under no

circumstances, should the TSD circuit be used in a set design or for any purpose other than protecting the IC from

heat damage.

13. Over Current Protection Circuit (OCP)

This IC incorporates an integrated overcurrent protection circuit that is activated when the load is shorted. This

protection circuit is effective in preventing damage due to sudden and unexpected incidents. However, the IC should

not be used in applications characterized by continuous operation or transitioning of the protection circuit.

14. Functional Safety

“ISO 26262 Process Compliant to Support ASIL-*”

A product that has been developed based on an ISO 26262 design process compliant to the ASIL level described in

the datasheet.

“Safety Mechanism is Implemented to Support Functional Safety (ASIL-*)”

A product that has implemented safety mechanism to meet ASIL level requirements described in the datasheet.

“Functional Safety Supportive Automotive Products”

A product that has been developed for automotive use and is capable of supporting safety analysis with regard to the

functional safety.

Note: “ASIL-*” is stands for the ratings of “ASIL-A”, “-B”, “-C” or “-D” specified by each product's datasheet.

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BD18395EFV-M

Ordering Information

B D 1

8

3

9

5 E F V

-

M E 2

Package

EFV: HTSSOP-B20

Packaging and forming specification

M: for Automotive

Packaging and forming specification

E2: Embossed tape and reel

Marking Diagram

HTSSOP-B20 (TOP VIEW)

Part Number Marking

LOT Number

D 1 8 3 9 5

Pin 1 Mark

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Physical Dimension and Packing Information

Package Name

HTSSOP-B20

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BD18395EFV-M

Revision History

Date

Revision

001

Changes

15.Dec.2020

New Release

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Notice

Precaution on using ROHM Products

(Note 1)

1. If you intend to use our Products in devices requiring extremely high reliability (such as medical equipment

,

aircraft/spacecraft, nuclear power controllers, etc.) and whose malfunction or failure may cause loss of human life,

bodily injury or serious damage to property (“Specific Applications”), please consult with the ROHM sales

representative in advance. Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way

responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of any

ROHM’s Products for Specific Applications.

(Note1) Medical Equipment Classification of the Specific Applications

JAPAN

USA

EU

CHINA

CLASSⅢ

CLASSⅣ

CLASSⅡb

CLASSⅢ

2. ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor

products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate

safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which

a failure or malfunction of our Products may cause. The following are examples of safety measures:

[a] Installation of protection circuits or other protective devices to improve system safety

[b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure

3. Our Products are not designed under any special or extraordinary environments or conditions, as exemplified below.

Accordingly, ROHM shall not be in any way responsible or liable for any damages, expenses or losses arising from the

use of any ROHM’s Products under any special or extraordinary environments or conditions. If you intend to use our

Products under any special or extraordinary environments or conditions (as exemplified below), your independent

verification and confirmation of product performance, reliability, etc, prior to use, must be necessary:

[a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents

[b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust

[c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2,

H2S, NH3, SO2, and NO2

[d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves

[e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items

[f] Sealing or coating our Products with resin or other coating materials

[g] Use of our Products without cleaning residue of flux (Exclude cases where no-clean type fluxes is used.

However, recommend sufficiently about the residue.); or Washing our Products by using water or water-soluble

cleaning agents for cleaning residue after soldering

[h] Use of the Products in places subject to dew condensation

4. The Products are not subject to radiation-proof design.

5. Please verify and confirm characteristics of the final or mounted products in using the Products.

6. In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse, is applied,

confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power

exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect

product performance and reliability.

7. De-rate Power Dissipation depending on ambient temperature. When used in sealed area, confirm that it is the use in

the range that does not exceed the maximum junction temperature.

8. Confirm that operation temperature is within the specified range described in the product specification.

9. ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in

this document.

Precaution for Mounting / Circuit board design

1. When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product

performance and reliability.

2. In principle, the reflow soldering method must be used on a surface-mount products, the flow soldering method must

be used on a through hole mount products. If the flow soldering method is preferred on a surface-mount products,

please consult with the ROHM representative in advance.

For details, please refer to ROHM Mounting specification

Notice-PAA-E

Rev.004

Precautions Regarding Application Examples and External Circuits

1. If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the

characteristics of the Products and external components, including transient characteristics, as well as static

characteristics.

2. You agree that application notes, reference designs, and associated data and information contained in this document

are presented only as guidance for Products use. Therefore, in case you use such information, you are solely

responsible for it and you must exercise your own independent verification and judgment in the use of such information

contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses

incurred by you or third parties arising from the use of such information.

Precaution for Electrostatic

This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper

caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be

applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron,

isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).

Precaution for Storage / Transportation

1. Product performance and soldered connections may deteriorate if the Products are stored in the places where:

[a] the Products are exposed to sea winds or corrosive gases, including Cl₂, H₂S, NH₃, SO₂, and NO₂

[b] the temperature or humidity exceeds those recommended by ROHM

[c] the Products are exposed to direct sunshine or condensation

[d] the Products are exposed to high Electrostatic

2. Even under ROHM recommended storage condition, solderability of products out of recommended storage time period

may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is

exceeding the recommended storage time period.

3. Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads

may occur due to excessive stress applied when dropping of a carton.

4. Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of

which storage time is exceeding the recommended storage time period.

Precaution for Product Label

A two-dimensional barcode printed on ROHM Products label is for ROHM’s internal use only.

Precaution for Disposition

When disposing Products please dispose them properly using an authorized industry waste company.

Precaution for Foreign Exchange and Foreign Trade act

Since concerned goods might be fallen under listed items of export control prescribed by Foreign exchange and Foreign

trade act, please consult with ROHM in case of export.

Precaution Regarding Intellectual Property Rights

1. All information and data including but not limited to application example contained in this document is for reference

only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any

other rights of any third party regarding such information or data.

2. ROHM shall not have any obligations where the claims, actions or demands arising from the combination of the

Products with other articles such as components, circuits, systems or external equipment (including software).

3. No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any

third parties with respect to the Products or the information contained in this document. Provided, however, that ROHM

will not assert its intellectual property rights or other rights against you or your customers to the extent necessary to

manufacture or sell products containing the Products, subject to the terms and conditions herein.

Other Precaution

1. This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM.

2. The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written

consent of ROHM.

3. In no event shall you use in any way whatsoever the Products and the related technical information contained in the

Products or this document for any military purposes, including but not limited to, the development of mass-destruction

weapons.

4. The proper names of companies or products described in this document are trademarks or registered trademarks of

ROHM, its affiliated companies or third parties.

Notice-PAA-E

Rev.004


型号：	BD18395EFV-M
厂家：	ROHM
描述：	BD18395EFV-M是可用于矩阵LED控制(时序控制)的降压LED驱动器。输入电压范围可达4.5V至70V，具备低功耗关断功能，可提供最大2.0A的平均输出电流。LED电流可使用外接电流设定电阻来设定，通过峰值电流检测OFFTIME控制进行动作。内置UVLO、过电流保护、LED开路检测、热关断功能、LED低电压检测、状态良好输出功能。适合进行矩阵控制的LED驱动器。驱动过电流保护驱动器
文件：	总45页 (文件大小：2271K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

BD18395EFV-M [ROHM]

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