BD5340G-2M [ROHM]

罗姆的延迟时间自由设置型CMOS电压检测器IC系列是内置了采用CMOS工艺的高精度、低消耗电流延迟电路的CMOS RESET IC系列。可通过外接电容器设定延迟时间。为保证客户可根据应用进行选择,备有Nch漏极开路输出(BD52xx-2M)系列和CMOS输出(BD53xx-2M)系列产品。备有检测电压为0.9V~5.0V的0.1V阶跃的产品阵容。在-40°C到105°C的整个工作温度范围内,将延迟时间精度控制在±30%内。;
BD5340G-2M
型号: BD5340G-2M
厂家: ROHM    ROHM
描述:

罗姆的延迟时间自由设置型CMOS电压检测器IC系列是内置了采用CMOS工艺的高精度、低消耗电流延迟电路的CMOS RESET IC系列。可通过外接电容器设定延迟时间。为保证客户可根据应用进行选择,备有Nch漏极开路输出(BD52xx-2M)系列和CMOS输出(BD53xx-2M)系列产品。备有检测电压为0.9V~5.0V的0.1V阶跃的产品阵容。在-40°C到105°C的整个工作温度范围内,将延迟时间精度控制在±30%内。

电容器
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Datasheet  
Voltage Detector (Reset) IC Series for Automotive Application  
Free Time Delay Setting  
CMOS Voltage Detector (Reset) IC  
BD52xx-2M Series and BD53xx-2M Series  
General Description  
Key Specifications  
ROHM's BD52xx-2M and BD53xx-2M series are highly  
accurate, low current consumption Voltage Detector  
ICs with a capacitor controlled time delay. The lineup  
includes N-channel open drain output (BD52xx-2M)  
and CMOS output (BD53xx-2M) so that the users can  
select depending on the application. The devices are  
available for specific detection voltage ranging from  
0.9V to 5.0V with 0.1V increment.  
Detection Voltage:  
0.9V to 5.0V (Typ.)  
0.1V step  
Ultra-Low Current Consumption:  
270nA (Typ.)  
Time Delay Accuracy:  
±30% (-40°C to +105°C, )  
(CT pin capacitor 1nF)  
Special Characteristics  
Detection Voltage Accuracy:  
The time delay has ±30% accuracy in the overall  
operating temperature range of -40°C to 105°C.  
±2.0%±12mV (VDET=0.9V to 1.6V)  
±2.5% (VDET=1.7V to 5.0V)  
Special Features  
AEC-Q100 Qualified (Note1)  
Package  
Nano Energy  
SSOP5:  
W(typ) x D(typ) x H(max)  
Delay Time Setting controlled by external capacitor  
Two output types (Nch open drain and CMOS output)  
Very small, lightweight and thin package  
Package SSOP5 is similar to SOT-23-5 (JEDEC)  
(Note1: Grade 1)  
2.90mm x 2.80mm x 1.25mm  
Application  
Automotive (audio system, navigation system, etc.)  
Application Circuit  
VDD1  
VDD2  
VDD1  
RL  
Microcontroller  
RST  
Microcontroller  
BD52xx-2M  
BD53xx-2M  
RST  
CCT  
CCT  
GND  
GND  
Figure 1. Open Drain Output Type  
BD52xx-2M Series  
Figure 2. CMOS Output Type  
BD53xx-2M Series  
Pin Configuration  
SSOP5  
Pin Description  
CT  
N.C.  
SSOP5  
Function  
TOP VIEW  
PIN No.  
Symbol  
1
2
3
4
VOUT Output pin  
VDD  
GND  
N.C.  
Power supply voltage  
GND  
Lot No.  
Marking  
No connection pin  
Capacitor connection pin  
for output delay time setting  
VOUT VDD GND  
5
CT  
N.C. pin is electrically open and can  
be connected to either VDD or GND.  
Nano Energy is a combination of technologies which realizes ultra low quiescent current operation.  
Product structureSilicon monolithic integrated circuit This product has no designed protection against radioactive rays  
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BD52xx-2M Series BD53xx-2M Series  
Ordering Information  
B
D
x
x
x
x
x
-
2
M
T
R
Part  
Number  
Output Type  
52 : Open Drain  
53 : CMOS  
Detection Voltage  
09 : 0.9V  
Package  
G : SSOP5  
Product Rank  
M : for Automotive specification  
TR : Embossed tape and reel  
Packaging and forming  
0.1V step  
50 : 5.0V  
Lineup  
Output Type  
Open Drain  
CMOS  
Part Number  
Detection Voltage  
Part Number  
Marking  
Marking  
5.0V  
4.9V  
4.8V  
4.7V  
4.6V  
4.5V  
4.4V  
4.3V  
4.2V  
4.1V  
4.0V  
3.9V  
3.8V  
3.7V  
3.6V  
3.5V  
3.4V  
3.3V  
3.2V  
3.1V  
3.0V  
2.9V  
2.8V  
2.7V  
2.6V  
2.5V  
2.4V  
2.3V  
2.2V  
2.1V  
2.0V  
1.9V  
1.8V  
1.7V  
1.6V  
1.5V  
1.4V  
1.3V  
1.2V  
1.1V  
1.0V  
0.9V  
1Z  
1Y  
1X  
1W  
1V  
1U  
1T  
1S  
1R  
1Q  
1P  
1N  
08  
07  
06  
05  
04  
03  
02  
01  
5G  
Z9  
Z8  
Z7  
XS  
XR  
24  
23  
22  
21  
20  
19  
18  
17  
16  
15  
14  
13  
12  
11  
BD5250  
BD5249  
BD5248  
BD5247  
BD5246  
BD5245  
BD5244  
BD5243  
BD5242  
BD5241  
BD5240  
BD5239  
BD5238  
BD5237  
BD5236  
BD5235  
BD5234  
BD5233  
BD5232  
BD5231  
BD5230  
BD5229  
BD5228  
BD5227  
BD5226  
BD5225  
BD5224  
BD5223  
BD5222  
BD5221  
BD5220  
BD5219  
BD5218  
BD5217  
BD5216  
BD5215  
BD5214  
BD5213  
BD5212  
BD5211  
BD5210  
BD5209  
90  
89  
88  
87  
86  
85  
84  
83  
82  
81  
80  
79  
78  
77  
76  
75  
74  
73  
72  
71  
70  
69  
68  
67  
66  
65  
64  
63  
62  
61  
60  
59  
58  
57  
56  
55  
54  
53  
52  
51  
5F  
5E  
BD5350  
BD5349  
BD5348  
BD5347  
BD5346  
BD5345  
BD5344  
BD5343  
BD5342  
BD5341  
BD5340  
BD5339  
BD5338  
BD5337  
BD5336  
BD5335  
BD5334  
BD5333  
BD5332  
BD5331  
BD5330  
BD5329  
BD5328  
BD5327  
BD5326  
BD5325  
BD5324  
BD5323  
BD5322  
BD5321  
BD5320  
BD5319  
BD5318  
BD5317  
BD5316  
BD5315  
BD5314  
BD5313  
BD5312  
BD5311  
BD5310  
BD5309  
10  
09  
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BD52xx-2M Series BD53xx-2M Series  
Absolute Maximum Ratings (Ta=+25°C)  
Parameter  
Symbol  
Limit  
-0.3 to +7  
Unit  
V
VDD-GND  
Power Supply Voltage  
Nch Open Drain Output  
CMOS Output  
GND-0.3 to +7  
GND-0.3 to VDD+0.3  
70  
Output Voltage  
Output Current  
VOUT  
V
Io  
mA  
°C  
°C  
°C  
Operating Temperature Range  
Maximum Junction Temperature  
Storage Temperature Range  
Topr  
-40 to +105  
+150  
Tjmax  
Tstg  
-55 to +150  
Caution 1: Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit  
between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is  
operated over the absolute maximum ratings.  
Caution 2: Should by any chance the maximum junction temperature rating be exceeded the rise in temperature of the chip may result in deterioration of the  
properties of the chip. In case of exceeding this absolute maximum rating, increase the board size and copper area to prevent exceeding the  
maximum junction temperature rating.  
Thermal Resistance(Note 1)  
Thermal Resistance (Typ)  
Parameter  
Symbol  
Unit  
1s(Note 3)  
2s2p(Note 4)  
SSOP5  
Junction to Ambient  
Junction to Top Characterization Parameter(Note 2)  
θJA  
376.5  
40  
185.4  
30  
°C/W  
°C/W  
ΨJT  
(Note 1)Based on JESD51-2A(Still-Air).  
(Note 2)The thermal characterization parameter to report the difference between junction temperature and the temperature at the top center of the outside  
surface of the component package.  
(Note 3)Using a PCB board based on JESD51-3.  
Layer Number of  
Measurement Board  
Material  
FR-4  
Board Size  
Single  
114.3mm x 76.2mm x 1.57mmt  
Top  
Copper Pattern  
Thickness  
Footprints and Traces  
70μm  
(Note 4)Using a PCB board based on JESD51-7.  
Layer Number of  
Material  
Board Size  
114.3mm x 76.2mm x 1.6mmt  
2 Internal Layers  
Measurement Board  
4 Layers  
FR-4  
Top  
Bottom  
Copper Pattern  
74.2mm x 74.2mm  
Copper Pattern  
Thickness  
Copper Pattern  
Thickness  
Thickness  
Footprints and Traces  
70μm  
74.2mm x 74.2mm  
35μm  
70μm  
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TSZ02201-0GIG0G300010-1-2  
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BD52xx-2M Series BD53xx-2M Series  
Electrical Characteristics (Unless otherwise specified Ta=-40°C to +105°C, VDD=0.8V to 6V)  
Limit  
Parameter  
Symbol  
Condition  
Unit  
V
Min  
VDET(T)  
×0.98  
-0.012  
VDET (T)  
×0.975  
Typ  
Max  
VDET(T)  
×1.02  
+0.012  
VDET(T)  
×1.025  
VDET(T)  
VDET=0.9V to 1.6V, VDD=HL, RL=100kΩ  
VDET=1.7V to 5.0V, VDD=HL, RL=100kΩ  
DetectionVoltage  
VDET  
VDET(T)  
VDET  
VDET  
VDET  
×0.07  
1.00  
1.10  
-
HysteresisVoltage  
VDET VDD=LHL, RL=100kΩ  
V
×0.03  
×0.05  
0.23  
Circuit Current when ON  
Circuit Current when OFF  
Operating Voltage Range  
IDD1 VDD= VDET-0.2V  
-
µA  
µA  
V
0.27  
IDD2 VDD= VDET+0.5V  
-
VOPL VOL0.4V, Ta=-40°C to 105°C, RL=100kΩ  
VDD=0.8V, ISINK = 0.17mA, VDET=0.9V to 1.6V  
0.80  
-
-
-
-
-
-
-
0.4  
“LowOutput Voltage (Nch)  
VOL  
VDD=1.2V, ISINK = 1.0mA, VDET=1.7V to 5.0V  
VDD=2.4V, ISINK = 2.0mA, VDET=2.7V to 5.0V  
VDD=4.8V, ISOURCE=2.0mA,  
VDET(0.9V to 4.2V)  
0.4  
V
0.4  
VDD-0.4  
-
-
VOH  
“HighOutput Voltage (Pch)  
V
VDD=6.0V, ISOURCE=2.5mA,  
VDET(0.9V to 5.0V)  
VDD-0.4  
-
-
-
Output Leak Current (BD52xx) ILEAK VDD= VDS=6V  
-
1.0  
72.1  
µA  
ms  
V
OUTGND50%, CT=0.01μF  
Delay Time (L H)  
tPLH  
38.9  
55.5  
Note 1 Note 2  
VDET(T) : Standard Detection Voltage(0.9V to 5.0V, 0.1V step)  
RL: Pull-up resistor to be connected between VOUT and power supply.  
Note 1 tPLH : VDD=(VDET(T)0.1V) → (VDET(T)+0.5V) for VDET=0.9V to 1.2V  
tPLH : VDD=(VDET(T)–0.5V) → (VDET(T)+0.5V) for VDET=1.3V to 5.0V  
Note 2 CT delay capacitor range: open to 4.7µF.  
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BD52xx-2M Series BD53xx-2M Series  
Block Diagram  
VDD  
VOUT  
Delay  
Vref  
Circuit  
*1  
*1  
*1  
GND  
*1: Parasitic Diode  
CT  
Figure 3. BD52xx-2M Series  
VDD  
*1  
*1  
Delay  
Circuit  
Vref  
VOUT  
*1  
*1  
GND  
*1: Parasitic Diode  
CT  
Figure 4. BD53xx-2M Series  
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BD52xx-2M Series BD53xx-2M Series  
Typical Performance Curves  
1.0  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
BD5209G-2M  
BD5209G-2M  
0.9  
0.8  
0.7  
Ta=105°C  
0.6  
VDD=VDET+0.5V  
Ta=25°C  
0.5  
0.4  
0.3  
0.2  
VDD=VDET-0.2V  
Ta=-40°C  
0.1  
0.0  
-40  
-20  
0
20  
40  
60  
80  
100  
0
1
2
3
4
5
6
Supply Voltage : VDD [V]  
Temperature : Ta [°C]  
Figure 5. Circuit Current vs. VDD  
Figure 6. Circuit Current vs. Temp  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
BD5230G-2M  
BD5230G-2M  
VDD=VDET+0.5V  
Ta=105°C  
Ta=25°C  
VDD=VDET-0.2V  
Ta=-40°C  
-40  
-20  
0
20  
Temperature : Ta [°C]  
Figure 8. Circuit Current vs. Temp  
40  
60  
80  
100  
0
1
2
3
4
5
6
Supply Voltage : VDD [V]  
Figure 7. Circuit Current vs. VDD  
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TSZ02201-0GIG0G300010-1-2  
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TSZ2211115001  
BD52xx-2M Series BD53xx-2M Series  
Typical Performance Curves - continued  
1.0  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
BD5250G-2M  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
BD5250G-2M  
VDD=VDET+0.5V  
Ta=105°C  
Ta=25°C  
VDD=VDET-0.2V  
Ta=-40°C  
-40  
-20  
0
20  
40  
60  
80  
100  
0
1
2
3
4
5
6
Temperature : Ta [°C]  
Supply Voltage : VDD [V]  
Figure 10. Circuit Current vs. Temp  
Figure 9. Circuit Current vs. VDD  
6.0  
5.0  
4.0  
3.0  
2.0  
1.0  
0.0  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
BD5209G-2M  
BD5209G-2M  
VDET + ΔVDET  
VDET  
0.7  
0.8  
0.9  
1.0  
1.1  
1.2  
-40  
-20  
0
20  
40  
60  
80  
100  
Supply Voltage : VDD [V]  
Temperature : Ta [°C]  
Figure 11. Detection Voltage  
Figure 12. Detection Voltage and Release Voltage  
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TSZ2211115001  
BD52xx-2M Series BD53xx-2M Series  
Typical Performance Curves - continued  
6.0  
3.6  
3.5  
3.4  
3.3  
3.2  
3.1  
3.0  
2.9  
2.8  
2.7  
2.6  
BD5230G-2M  
BD5230G-2M  
5.0  
VDET + ΔVDET  
4.0  
3.0  
2.0  
1.0  
0.0  
VDET  
2.7 2.8 2.9  
3
3.1 3.2 3.3 3.4 3.5  
-40  
-20  
0
20  
40  
60  
80  
100  
Supply Voltage : VDD [V]  
Temperature : Ta [°C]  
Figure 13. Detection Voltage  
Figure 14. Detection Voltage and Release Voltage  
5.6  
5.5  
5.4  
5.3  
5.2  
5.1  
5.0  
4.9  
4.8  
4.7  
4.6  
6.0  
5.0  
4.0  
3.0  
2.0  
1.0  
0.0  
BD5250G-2M  
BD5250G-2M  
VDET + ΔVDET  
VDET  
4.7 4.8 4.9 5.0 5.1 5.2 5.3 5.4 5.5 5.6  
-40  
-20  
0
20  
40  
60  
80  
100  
Supply Voltage : VDD [V]  
Temperature : Ta [°C]  
Figure 16. Detection Voltage and Release Voltage  
Figure 15. Detection Voltage  
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TSZ2211115001  
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05.Jul.2018 Rev.002  
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BD52xx-2M Series BD53xx-2M Series  
Typical Performance Curves - continued  
Pull-up to 5V  
Pull-up resistance: 100kΩ  
Pull-up to VDD  
Pull-up resistance: 100kΩ  
6.0  
5.0  
4.0  
3.0  
2.0  
1.0  
0.0  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
BD5230G-2M  
BD5230G-2M  
Ta=105°C  
Ta=25°C  
Ta=-40°C  
Ta=105°C  
Ta=25°C  
Ta=-40°C  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
Supply Voltage : VDD [V]  
Supply Voltage : VDD [V]  
Figure 17. I/O Characteristics  
Figure 18. I/O Characteristics  
Pull-up to 5V  
Pull-up to VDD  
Pull-up resistance: 100kΩ  
Pull-up resistance: 100kΩ  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
-40  
-20  
0
20  
Temperature : Ta [°C]  
Figure 19. Operating Limit Voltage  
40  
60  
80  
100  
-40  
-20  
0
20  
Temperature : Ta [°C]  
Figure 20. Operating Limit Voltage  
40  
60  
80  
100  
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TSZ2211115001  
BD52xx-2M Series BD53xx-2M Series  
Typical Performance Curves - continued  
70  
70  
60  
50  
40  
30  
20  
10  
0
BD5309G-2M  
BD5250G-2M  
VDD = 2V  
60  
VDD = 4V  
50  
40  
30  
20  
10  
0
VDD = 3V  
VDD = 1.2V  
VDD = 2V  
VDD = 0.85V  
VDD = 1.2V  
0.0  
1.0  
2.0  
3.0  
4.0  
5.0  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
Drain-Source Voltage : VDS [V]  
Drain-Source Voltage : VDS [V]  
Figure 21. “High” Output Current  
Figure 22. “Low” Output Current  
35  
30  
25  
20  
15  
10  
5
70  
60  
50  
40  
30  
20  
10  
0
BD5220G-2M  
BD5309G-2M  
Ta=-40°C  
Ta=-40°C  
Ta=25°C  
Ta=25°C  
Ta=105°C  
Ta=105°C  
0
0.0  
1.0  
2.0  
3.0  
4.0  
5.0  
6.0  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
Supply Voltage : VDD [V]  
Supply Voltage : VDD [V]  
Figure 23. “High” Output Current (VDS=0.5V)  
Figure 24. “Low” Output Current (VDS=0.5V)  
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Typical Performance Curves - continued  
70  
60  
50  
40  
30  
20  
10  
0
80  
70  
CCT=10nF  
60  
50  
40  
CCT=4.7nF  
30  
20  
10  
0
-40  
-20  
0
20  
Temperature : Ta [°C]  
Figure 26. Output Delay Time (H to L)  
40  
60  
80  
100  
-40  
-20  
0
20  
40  
60  
80  
100  
Temperature : Ta [°C]  
Figure 25. Output Delay Time (L to H)  
100000  
10000  
1000  
100  
70  
60  
50  
40  
30  
20  
10  
0
Ta=-40°C  
Ta=25°C  
Ta=105°C  
10  
1
0.1  
0.0001  
0.001  
0.01  
0.1  
1
10  
0.0001  
0.001  
0.01  
0.1  
1
10  
CT Pin Capacitance : CCT [µF]  
CT Pin Capacitance : CCT [µF]  
Figure 27. Output Delay Time (L to H)  
Figure 28. Output Delay Time (H to L)  
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Application Information  
1. Explanation of Operation  
For both the open drain type (Figure 29) and the CMOS output type (Figure 30), the detection and release voltages  
are used as threshold voltages. When the voltage applied to the VDD pin reaches the applicable threshold voltage,  
the VOUT pin voltage switches from either “High” to “Low” or from “Low” to “High”. BD52xx-2M series and  
BD53xx-2M series have delay time function which set tPLH (output “Low” to ”High”) using an external capacitor  
connected in CT pin (CCT). Because the BD52xx-2M series uses an open drain output type, it is necessary to connect  
a pull up resistor to VDD or another power supply if needed [The output “High” voltage (VOUT) in this case becomes  
VDD or the voltage of the other power supply].  
VDD  
VDD  
VOUT  
Delay  
Delay  
Vref  
Vref  
VOUT  
Circuit  
Circuit  
GND  
GND  
CT  
CT  
Figure 30. (BD53xx-2M type internal block diagram)  
Figure 29. (BD52xx-2M type internal block diagram)  
2. Setting of Detector Delay Time  
Delay time L to H (tPLH) is the time when VOUT rises to 1/2 of VDD after VDD rises up and beyond the release  
voltage (VDET+∆VDET). The delay time (tPLH) at the rise of VDD is determined by delay coefficient, CT capacitor and  
delay time when CT pin is open (tCTO) and calculated from the following formula. When CT capacitor ≥ 1nF, tCTO has  
less effect and tPLH computation is shown on Example No.2. The result has ±30% tolerance within the operating  
temperature range of -40°C to +105°C  
Formula: (Ta=25°C)  
푃퐿퐻 = 퐶ꢀ푇 × 퐷푒푙푎푦 퐶표푒푓푓푖푐푖푒푛푡 + ꢀ푇푂  
[s]  
where:  
CCT is the CT pin external capacitor  
Delay Coefficient is equal to 5.55 x 106  
tCTO is the delay time when CT=open Note1  
Delay Time (tCTO  
)
Temperature  
Min  
Typ  
Max  
Ta = -40°C to +105°C  
15µs  
50µs  
150µs  
Note1: tCTO is design guarantee only; outgoing inspection is not done on all products.  
Example No.1:  
CT capacitor = 100pF  
−ꢃ2  
× 5.55 × 106 × 0.7 + 15 × 10−6 = 403µ푠  
)
(
푃퐿퐻_푚ꢁꢂ = 100 × 10  
−ꢃ2  
× 5.55 × 106 × 1.0 + 50 × 10−6 = ꢆ05µ푠  
)
(
푃퐿퐻_ꢄꢅ푝 = 100 × 10  
−ꢃ2  
× 5.55 × 106 × 1.3 + 150 × 10−6 = 87ꢈµ푠  
)
(
푃퐿퐻_푚ꢇ푥 = 100 × 10  
Example No.2:  
CT capacitor = 1nF  
푃퐿퐻_ꢄꢅ푝 = 1 × 10−9 × 5.55 × 106 = 5.55ꢉ푠  
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3. Timing Waveform  
The following shows the relationship between the input voltage VDD and the output voltage VOUT when the power supply  
voltage VDD is sweep up and sweep down.  
VDD  
RL  
VDD  
Delay  
Circuit  
Vref  
VOUT  
GND  
CT  
CCT  
Figure 31. BD52xx-2M Set-up  
VDD  
VDET+ΔVDET  
Hysteresis Voltage (ΔVDET  
)
VDET  
VOPL: <0.8V  
t
3
4
5
1
2
4
5
2
3
2
1
VOUT  
t
undefined  
undefined  
tPLH  
tPLH  
tPHL  
tPHL  
Figure 32. Timing Diagram  
1. When the power supply turns on, the Output Voltage (VOUT) is undefined until VDD overcomes the Operating  
Voltage Limit (VOPL).  
2. VOUT will turn to “Low” as VDD increases above VOPL but less than the Release Voltage (VDET+ΔVDET),  
3. When VDD exceeds the Release Voltage (VDET+ΔVDET), delay time (tPLH) set by capacitor at CT pin (CCT)  
will happen then VOUT will switch from “Low” to “High”.  
4. VOUT will remain Highuntil VDD do not fall below the Detection Voltage (VDET).  
5. When VDD drops below VDET, VOUT will switch from Highto Lowwith a delay of tPHL  
.
*The potential difference between the detection voltage and the release voltage is known as the Hysteresis  
Voltage width (∆VDET). The system is designed such that the output will not toggle with power supply fluctuations  
within this hysteresis width, preventing malfunctions due to noise.  
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4. Circuit Applications  
(1) Examples of common application circuits  
VDD1  
VDD2  
Application examples of BD52xx-2M series  
(Open-drain output type) and BD53xx-2M series  
(CMOS output type) are shown below.  
RL  
Microcontroller  
CASE1: Power supply of the microcontroller (VDD2  
differs from the power supply of the reset detection  
(VDD1).  
)
RST  
BD52xx-2M  
CCT  
Use an open drain output type (BD52xx-2M) device  
with a load resistance RL attached as shown  
in Figure33.  
GND  
Figure 33. Open Drain Output Type  
CASE2: Power supply of the microcontroller (VDD1) is  
the same as the power supply of the reset detection  
(VDD1).  
VDD1  
Use a CMOS output type (BD53xx-2M) device or an  
open-drain output type (BD52xx-2M) device with a  
pull-up resistor between the output and VDD1  
.
Microcontroller  
RST  
BD53xx-2M  
CCT  
GND  
Figure 34. CMOS Output type  
(2) The following is an example of circuit application in which an OR connection between two types of detection voltage  
resets the microcontroller.  
VDD1  
VDD2  
VDD3  
RL  
Microcontroller  
RST  
BD52xx-2M  
NO.1  
BD52xx-2M  
NO.2  
CCT  
CCT  
GND  
Figure 35. OR Circuit Connection Application  
To reset the microcontroller when many independent power supplies are used in the system, OR connect an open  
drain output type (BD52xx-2M series) to the microcontroller’s input with pull-up resistor to the supply voltage of the  
microcontroller (VDD3) as shown in Figure 35. By pulling-up to VDD3, output “High” voltage of micro-controller power  
supply is possible.  
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Circuit Applications (continued)  
(3) Examples of the power supply with resistor dividers  
In applications wherein the power supply voltage of an IC comes from a resistor divider circuit, an inrush current will  
flow into the circuit when the output level switches from Low” to “High” or vice versa. Inrush current is a sudden  
surge of current that flows from the power supply (VDD) to ground (GND) as the output logic changes its state. This  
current flow may cause malfunction in the systems operation such as output oscillations, etc.  
V1  
(Note1)  
IDD  
RA  
(RA100kohm)  
I1  
VDD  
Inrush Current  
(Note1)  
CVDD  
(CVDD≥0.1μF)  
BD52xx-2M  
BD53xx-2M  
RB  
VOUT  
GND  
VDD  
0
VDET  
Figure 36. Resistor Divider Connection Application  
Figure 37. VDD Voltage vs. Current Consumption  
A voltage drop [Inrush current (I1)] × [input resistor (RA)] is caused by the inrush current, and causes the input  
voltage to drop when the output switches from “Low” to “High”. When the input voltage decreases and falls below  
the detection voltage, the output voltage switches from “High” to “Low”. At this time, the inrush current stops flowing  
through output Low”, and the voltage drop is reduced. As a result, the output switches from “Low” to “High”, which  
again causes the inrush current to flow and the voltage to drop. This operation repeats and will result to oscillation.  
In case resistor divider will not use and only RA will use, same response will happen.  
Note1: The circuit connection mentioned above does not guarantee successful operation.  
Please perform thorough evaluation using the actual application and set countermeasures  
100  
100.0  
10.0  
1.0  
BD5309G-2M  
BD5309G-2M  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
0.1  
1.0  
2.0  
3.0  
4.0  
5.0  
6.0  
-40  
-20  
0
20  
Temperature : Ta (°C)  
Figure 39. IDD Inrush Current VDD=6V  
40  
60  
80  
100  
Supply Voltage : VDD (V)  
Figure 38. IDD Inrush Current Ta=25°C  
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Circuit Applications (continued)  
Depending on the application set-up, there are times that VDD voltage is always below the Release Voltage (VDET+ΔVDET  
)
because of the effect of inrush current as shown in Figure 40.  
Voltage  
V1  
ΔVDROP = Inrush Current x RA  
VDD  
VDETVDET  
Hysteresis Voltage (ΔVDET  
)
VDET  
t
Figure 40. VDD Drop Caused by Inrush Current  
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Operational Notes  
1. Reverse Connection of Power Supply  
Connecting the power supply in reverse polarity can damage the IC. Take precautions against reverse polarity when  
connecting the power supply, such as mounting an external diode between the power supply and the IC’s power supply  
pins.  
2. Power Supply Line  
Design the PCB layout pattern to provide low impedance supply lines. Furthermore, connect a capacitor to ground at all  
power supply pins. Consider the effect of temperature and aging on the capacitance value when using electrolytic  
capacitors.  
3. Ground Voltage  
Ensure that no pins are at a voltage below that of the ground pin at any time, even during transient condition.  
4. Ground Wiring Pattern  
When using both small-signal and large-current ground traces, the two ground traces should be routed separately but  
connected to a single ground at the reference point of the application board to avoid fluctuations in the small-signal  
ground caused by large currents. Also ensure that the ground traces of external components do not cause variations on  
the ground voltage. The power supply and ground lines must be as short and thick as possible to reduce line  
impedance.  
5. Thermal Consideration  
Should by any chance the maximum junction temperature rating be exceeded the rise in temperature of the chip may  
result in deterioration of the properties of the chip. In case of exceeding this absolute maximum rating, increase the  
board size and copper area to prevent exceeding the maximum junction temperature rating.  
6. Recommended Operating Conditions  
These conditions represent a range within which the expected characteristics of the IC can be approximately obtained.  
The electrical characteristics are guaranteed under the conditions of each parameter.  
7. Inrush Current  
When power is first supplied to the IC, it is possible that the internal logic may be unstable and inrush current may flow  
instantaneously due to the internal powering sequence and delays, especially if the IC has more than one power supply.  
Therefore, give special consideration to power coupling capacitance, power wiring, width of GND wiring, and routing of  
connections.  
8. Operation Under Strong Electromagnetic Field  
Operating the IC in the presence of a strong electromagnetic field may cause the IC to malfunction.  
9. Testing on Application Boards  
When testing the IC on an application board, connecting a capacitor directly to a low-impedance output pin may subject  
the IC to stress. Always discharge capacitors completely after each process or step. The IC’s power supply should  
always be turned off completely before connecting or removing it from the test setup during the inspection process. To  
prevent damage from static discharge, ground the IC during assembly and use similar precautions during transport and  
storage.  
10. Inter-pin Short and Mounting Errors  
Ensure that the direction and position are correct when mounting the IC on the PCB. Incorrect mounting may result in  
damaging the IC. Avoid nearby pins being shorted to each other especially to ground, power supply and output pin.  
Inter-pin shorts could be due to many reasons such as metal particles, water droplets (in very humid environment) and  
unintentional solder bridge deposited in between pins during assembly to name a few.  
11. Unused Input Pins  
Input pins of an IC are often connected to the gate of a MOS transistor. The gate has extremely high impedance and  
extremely low capacitance. If left unconnected, the electric field from the outside can easily charge it. The small charge  
acquired in this way is enough to produce a significant effect on the conduction through the transistor and cause  
unexpected operation of the IC. So unless otherwise specified, unused input pins should be connected to the power  
supply or ground line  
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Operational Notes continued  
12. Regarding Input Pins of the IC  
In the construction of this IC, P-N junctions are inevitably formed creating parasitic diodes or transistors. The operation  
of these parasitic elements can result in mutual interference among circuits, operational faults, or physical damage.  
Therefore, conditions which cause these parasitic elements to operate, such as applying a voltage to an input pin lower  
than the ground voltage should be avoided. Furthermore, do not apply a voltage to the input pins when no power supply  
voltage is applied to the IC. Even if the power supply voltage is applied, make sure that the input pins have voltages  
within the values specified in the electrical characteristics of this IC  
13. Ceramic Capacitor  
When using a ceramic capacitor, determine the dielectric constant considering the change of capacitance with  
temperature and the decrease in nominal capacitance due to DC bias and others  
14. Area of Safe Operation (ASO)  
Operate the IC such that the output voltage, output current, and the maximum junction temperature rating are all within  
the Area of Safe Operation (ASO).  
15. Bypass Capacitor for Noise Rejection  
To help reject noise, put more than 0.1µF capacitor between VDD pin and GND. Be careful when using extremely big  
capacitor as transient response will be affected.  
16. The VDD line impedance might cause oscillation because of the detection current.  
17. A VDD to GND capacitor (as close connection as possible) should be used in high VDD line impedance condition.  
18. External Parameters  
The recommended value of CT Capacitor is from open to 4.7µF and pull-up resistance value is 50kΩ to 1MΩ. There are  
many factors (board layout, etc) that can affect characteristics. Operating beyond the recommended values does not  
guarantee correct operation. Please verify and confirm using practical applications.  
19. When VDD falls below the minimum operating voltage, output will be open. When output is connected to pull-up voltage,  
output will be equivalent to pull-up voltage.  
20. Power-on Reset Operation  
Please note that the power on reset output varies with the VDD rise time. Please verify the behavior in the actual  
operation.  
21. CT Pin Discharge  
Due to the capabilities of the CT pin discharge transistor, the CT pin may not completely discharge when a short input  
pulse is applied, and in this case the delay time may not be controlled. Please verify the actual operation.  
22. This IC has extremely high impedance pins. Small leak current due to the uncleanness of PCB surface might cause  
unexpected operations. Application values in these conditions should be selected carefully. If 10MΩ leakage is assumed  
between the CT and GND pin, it is recommended to insert 1MΩ resistor between CT and VDD pin. However, delay time  
will change when resistor is connected externally to CT pin so verify the delay time requirements when using this set-up.  
Also, when similar leakage is assumed between VOUT and GND pin, consider to set the value of pull up resistor lower  
than 1/10 of the impedance of assumed leakage route.  
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External Dimension Diagram, Packaging and Forming Specification  
Package Name  
SSOP5  
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Revision History  
Date  
Revision  
Changes  
2017/05/12  
2018/07/05  
001  
002  
New  
Add notation of Nano Energy”  
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Notice  
Precaution on using ROHM Products  
(Note 1)  
1. If you intend to use our Products in devices requiring extremely high reliability (such as medical equipment  
,
aircraft/spacecraft, nuclear power controllers, etc.) and whose malfunction or failure may cause loss of human life,  
bodily injury or serious damage to property (Specific Applications), please consult with the ROHM sales  
representative in advance. Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way  
responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of any  
ROHMs Products for Specific Applications.  
(Note1) Medical Equipment Classification of the Specific Applications  
JAPAN  
USA  
EU  
CHINA  
CLASS  
CLASSⅣ  
CLASSb  
CLASSⅢ  
CLASSⅢ  
CLASSⅢ  
2. ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor  
products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate  
safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which  
a failure or malfunction of our Products may cause. The following are examples of safety measures:  
[a] Installation of protection circuits or other protective devices to improve system safety  
[b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure  
3. Our Products are not designed under any special or extraordinary environments or conditions, as exemplified below.  
Accordingly, ROHM shall not be in any way responsible or liable for any damages, expenses or losses arising from the  
use of any ROHM’s Products under any special or extraordinary environments or conditions. If you intend to use our  
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[c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2,  
H2S, NH3, SO2, and NO2  
[d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves  
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[f] Sealing or coating our Products with resin or other coating materials  
[g] Use of our Products without cleaning residue of flux (even if you use no-clean type fluxes, cleaning residue of  
flux is recommended); or Washing our Products by using water or water-soluble cleaning agents for cleaning  
residue after soldering  
[h] Use of the Products in places subject to dew condensation  
4. The Products are not subject to radiation-proof design.  
5. Please verify and confirm characteristics of the final or mounted products in using the Products.  
6. In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse. is applied,  
confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power  
exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect  
product performance and reliability.  
7. De-rate Power Dissipation depending on ambient temperature. When used in sealed area, confirm that it is the use in  
the range that does not exceed the maximum junction temperature.  
8. Confirm that operation temperature is within the specified range described in the product specification.  
9. ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in  
this document.  
Precaution for Mounting / Circuit board design  
1. When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product  
performance and reliability.  
2. In principle, the reflow soldering method must be used on a surface-mount products, the flow soldering method must  
be used on a through hole mount products. If the flow soldering method is preferred on a surface-mount products,  
please consult with the ROHM representative in advance.  
For details, please refer to ROHM Mounting specification  
Notice-PAA-E  
Rev.003  
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Precautions Regarding Application Examples and External Circuits  
1. If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the  
characteristics of the Products and external components, including transient characteristics, as well as static  
characteristics.  
2. You agree that application notes, reference designs, and associated data and information contained in this document  
are presented only as guidance for Products use. Therefore, in case you use such information, you are solely  
responsible for it and you must exercise your own independent verification and judgment in the use of such information  
contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses  
incurred by you or third parties arising from the use of such information.  
Precaution for Electrostatic  
This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper  
caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be  
applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron,  
isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).  
Precaution for Storage / Transportation  
1. Product performance and soldered connections may deteriorate if the Products are stored in the places where:  
[a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2  
[b] the temperature or humidity exceeds those recommended by ROHM  
[c] the Products are exposed to direct sunshine or condensation  
[d] the Products are exposed to high Electrostatic  
2. Even under ROHM recommended storage condition, solderability of products out of recommended storage time period  
may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is  
exceeding the recommended storage time period.  
3. Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads  
may occur due to excessive stress applied when dropping of a carton.  
4. Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of  
which storage time is exceeding the recommended storage time period.  
Precaution for Product Label  
A two-dimensional barcode printed on ROHM Products label is for ROHMs internal use only.  
Precaution for Disposition  
When disposing Products please dispose them properly using an authorized industry waste company.  
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trade act, please consult with ROHM in case of export.  
Precaution Regarding Intellectual Property Rights  
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only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any  
other rights of any third party regarding such information or data.  
2. ROHM shall not have any obligations where the claims, actions or demands arising from the combination of the  
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Other Precaution  
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