BD60GA3MEFJ-M [ROHM]
BDxxGA3MEFJ-M系列是可提供0.3A输出电流的稳压器。输出精度为±1%。有可使用外接电阻在1.5V～13.0V范围内任意设置输出电压的可变型以及1.5V/1.8V/2.5V/3.0V/3.3V/5V/6V/7V/8V/9V/10V/12V固定输出型两种。封装组件采用散热性优良的HTSOP-J8。本机型内置用于防止因输出短路等发生IC破坏的过电流保护电路、关断时使电路电流为0µA的ON/OFF开关、以及防止因过负荷状态等使IC发生热破坏的温度保护电路。另外，采用了陶瓷电容器，有助于整机的小型化和长寿化。;
| 型号： | BD60GA3MEFJ-M |
| 厂家： | 
ROHM |
| 描述： | BDxxGA3MEFJ-M系列是可提供0.3A输出电流的稳压器。输出精度为±1%。有可使用外接电阻在1.5V～13.0V范围内任意设置输出电压的可变型以及1.5V/1.8V/2.5V/3.0V/3.3V/5V/6V/7V/8V/9V/10V/12V固定输出型两种。封装组件采用散热性优良的HTSOP-J8。本机型内置用于防止因输出短路等发生IC破坏的过电流保护电路、关断时使电路电流为0µA的ON/OFF开关、以及防止因过负荷状态等使IC发生热破坏的温度保护电路。另外，采用了陶瓷电容器，有助于整机的小型化和长寿化。 开关 过电流保护 电容器 陶瓷电容器 稳压器 |
| 文件： | 总24页 (文件大小：991K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Datasheet
Automotive 300mA Variable Output
LDO Regulator
BDxxGA3MEFJ-M BDxxGA3VEFJ-M
●General Description
BDxxGA3MEFJ-M BDxxGA3VEFJ-M is a LDO regulator with output current 0.3A. The output accuracy is ±1% of output
voltage. With external resistance, it is available to set the output voltage at random (from 1.5V to 13.0V).It has package
type: HTSOP-J8. Over current protection (for protecting the IC destruction by output short circuit), circuit current ON/OFF
switch (for setting the circuit 0μA at shutdown mode), and thermal shutdown circuit (for protecting IC from heat destruction
by over load condition) are all built in. It is usable for ceramic capacitor and enables to improve smaller set and long-life.
●
(Typ.)
(Typ.)
(Max.)
Package
HTSOP-J8
●Features
◼ High accuracy reference voltage circuit
4.90mm x 6.00mm x 1.00mm
◼ Built-in Over Current Protection circuit (OCP)
◼ Built-in Thermal Shut Down circuit (TSD)
◼ With shut down switch
◼ AEC-Q100 Qualified
●Key Specifications
◼ Input power supply voltage range:
◼ Output voltage range(Variable type):
4.5V to 14.0V
1.5V to 13.0V
◼ Output voltage(Fixed type):1.5V/1.8V/2.5V/3.0V/3.3V
5.0V/6.0V/7.0V/8.0V/9.0V/10V/12V
◼ Output current:
◼ Shutdown current:
0.3A (Max.)
0μA(Typ.)
◼ Operating temperature range:
-40℃ to +105℃
HTSOP-J8
●Typical Application Circuit
VCC
EN
VO
VCC
EN
VO
COUT
COUT
CIN
CIN
R1
R2
VO_S
FB
GND
FIN
GND
FIN
CIN,COUT : Ceramic Capacitor
CIN,COUT : Ceramic Capacitor
○Product structure：Silicon monolithic integrated circuit ○This product is not designed protection against radioactive rays.
www.rohm.com
TSZ02201-0R6R0AN00220-1-2
2021.10.11 Rev.002
© 2012 ROHM Co., Ltd. All rights reserved.
1/21
TSZ22111･14･001
Datasheet
BDxxGA3MEFJ-M BDxxGA3VEFJ-M
●Ordering Information
B D x x G
A
3 y E F J - M E 2
Part
Output
Voltage
resistance current
Output
Automotive Package
“M”:M Series
Packaging and forming specification
Number voltage
00:Variable G:15V
A3:0.3A “V”:
EFJ:HTSOP-J8 E2:Emboss tape reel
15:1.5V
18:1.8V
25:2.5V
30:3.0V
33:3.3V
50:5.0V
60:6.0V
70:7.0V
80:8.0V
90:9.0V
J0:10.0V
J2:12.0V
M Series,
Additional
production
line
Output Voltage
Variable
Package
Ordering Code
Production Line(Note 1)
BD00GA3MEFJ-ME2
BD00GA3VEFJ-ME2
BD15GA3MEFJ-ME2
BD15GA3VEFJ-ME2
BD18GA3MEFJ-ME2
BD18GA3VEFJ-ME2
BD25GA3MEFJ-ME2
BD25GA3VEFJ-ME2
BD30GA3MEFJ-ME2
BD30GA3VEFJ-ME2
BD33GA3MEFJ-ME2
BD33GA3VEFJ-ME2
BD50GA3MEFJ-ME2
BD50GA3VEFJ-ME2
BD60GA3MEFJ-ME2
BD60GA3VEFJ-ME2
BD70GA3MEFJ-ME2
BD70GA3VEFJ-ME2
BD80GA3MEFJ-ME2
BD80GA3VEFJ-ME2
BD90GA3MEFJ-ME2
BD90GA3VEFJ-ME2
BDJ0GA3MEFJ-ME2
BDJ0GA3VEFJ-ME2
BDJ2GA3MEFJ-ME2
BDJ2GA3VEFJ-ME2
A
B
A
B
A
B
A
B
A
B
A
B
A
B
A
B
A
B
A
B
A
B
A
B
A
B
1.5V
1.8V
2.5V
3.0V
3.3V
5.0V
6.0V
7.0V
8.0V
9.0V
10.0V
12.0V
HTSOP-J8
(Note1) For the purpose of improving production efficiency, Production Line A and B have a multi-line configuration.
Electric characteristics noted in Datasheet does not differ between Production Line A and B. Production Line B is recommended
for new product.
www.rohm.com
TSZ02201-0R6R0AN00220-1-2
2021.10.11 Rev.002
© 2012 ROHM Co., Ltd. All rights reserved.
2/21
TSZ22111･15･001
Datasheet
BDxxGA3MEFJ-M BDxxGA3VEFJ-M
●Block Diagram
BD00GA3MEFJ-M BD00GA3VEFJ-M
(VO+0.90) to 14.0V
GND
3
VCC
8
Ceramic
≧ 1.0μF
Capacitor
OCP
SOFT
START
1.5V to 13.0V
Vo
FB
2
Ceramic
R1
≧ 1.0μF
Capacitor
EN
5
R2
TSD
Figure 1. Block Diagram
BDxxGA3MEFJ-M BDxxGA3VEFJ-M (Fixed type)
4.5～14.0V
VCC
8
Ceramic
≧ 1.0μF
Capacitor
OCP
SOFT
START
VO
EN
1
5
3
TSD
Ceramic
≧ 1.0μF
Capacitor
GND
FIN
VO_S
Figure 2. Block Diagram (Fixed type)
TOP VIEW
●Pin ConFigure uration
VO
VCC
FB/Vo_s
GND
N.C.
N.C.
EN
N.C.
●Pin Description
Pin No.
Pin name
VO
Pin Function
1
Output pin
Feedback pin
GND pin
2
FB/Vo_s
GND
N.C.
EN
3
4
Non Connection (Used to connect GND or OPEN state.)
Enable pin
5
6
N.C.
N.C.
VCC
Non Connection (Used to connect GND or OPEN state.)
Non Connection (Used to connect GND or OPEN state.)
Input pin
7
8
Reverse
FIN
Substrate(Connect to GND)
www.rohm.com
TSZ02201-0R6R0AN00220-1-2
2021.10.11 Rev.002
© 2012 ROHM Co., Ltd. All rights reserved.
3/21
TSZ22111･15･001
Datasheet
BDxxGA3MEFJ-M BDxxGA3VEFJ-M
●Absolute Maximum Ratings (Ta=25℃)
Parameter
Power supply voltage
Symbol
Limits
15.0 *1
Unit
V
VCC
VEN
EN voltage
15.0
V
Power dissipation
HTSOP-J8
Pd*2
Topr
Tstg
Tjmax
2110 *2
mW
℃
Operating Temperature Range
Storage Temperature Range
-40 to +105
-55 to +150
+150
℃
Junction Temperature
℃
*1 Not to exceed Pd
*2 Reduced by 16.9mW/℃ for each increase in Ta of 1℃ over 25℃. (when mounted on a board 70mm×70mm×1.6mm glass-epoxy board, two layer)
●Recommended Operating Ratings (Ta=25℃)
Parameter
Input power supply voltage
EN voltage
Symbol
VCC
VEN
VO
Min.
4.5
0.0
1.5
0.0
Max.
14.0
14.0
13.0
0.3
Unit
V
V
Output voltage setting range
Output current
V
IO
A
●Electrical Characteristics (Unless otherwise noted, EN=3V, Vcc=6V, R1=43kΩ, R2=8.2kΩ)
Parameter
Circuit current at shutdown
mode
Symbol
Temp
25℃
Min.
Typ.
Max.
5
Unit
Conditions
-
0
ISD
μA VEN=0V, OFF mode
μA
-40~105℃
25℃
-
-
5
-
600
900
1200
50
Bias current
ICC
Reg.I
Reg IO
VCO
-40~105℃
25℃
-
-
-
25
Line regulation
mV VCC =( Vo+0.9V )→14.0V
mV IO=0→0.3A
-40~105℃
25℃
-
-
50
-
25
75
Load regulation
Minimum dropout Voltage
-40~105℃
25℃
-
-
75
-
-
0.6
0.9
V
V
VCC=5V, IO=0.3A
IO=0mA
-40~105℃
25℃
-
1.2
0.792
0.776
Vo×0.99
0.800
0.808
0.824
Vo×1.01
Vo×1.03
0.8
Output reference voltage
(Variable type)
VFB
-40~105℃
25℃
-
Vo
Vo
-
Output voltage(Fixed type)
EN Low voltage
VO
V
IO=0mA
-40~105℃ Vo×0.97
25℃
-40~105℃
25℃
0
0
VEN(Low)
VEN(High)
IEN
V
-
0.8
2.4
2.4
1
-
14.0
14.0
9
EN High voltage
V
-40~105℃
25℃
-
3
-
EN Bias current
µA
-40~105℃
-
9
www.rohm.com
TSZ02201-0R6R0AN00220-1-2
2021.10.11 Rev.002
© 2012 ROHM Co., Ltd. All rights reserved.
4/21
TSZ22111･15･001
Datasheet
BDxxGA3MEFJ-M BDxxGA3VEFJ-M
●Typical Performance Curves
(Unless otherwise noted, EN=3V, VCC=6V, R1=43kΩ, R2=8.2kΩ)
Vo
50mV/div
Vo
50mV/div
Io
0.2A/div
Io
0.2A/div
10usec/div
10usec/div
Figure 4.
Transient Response
(0→0.3A)
Figure 3.
Transient Response
(0→0.3A)
Co=1µF, Ta=25°C
Co=1µF, Ta=-40°C
N
Vo
50mV/div
50mV/div
Vo
Io
Io
0.2A/div
0.2A/div
10usec/div
2msec/div
Figure 5.
Transient Response
(0→0.3A)
Figure 6.
Transient Response
(0.3→0A)
Co=1µF,Ta=105℃
Co=1µF,Ta=-40℃
www.rohm.com
TSZ02201-0R6R0AN00220-1-2
2021.10.11 Rev.002
© 2012 ROHM Co., Ltd. All rights reserved.
5/21
TSZ22111･15･001
Datasheet
BDxxGA3MEFJ-M BDxxGA3VEFJ-M
Vo
50mV/div
Vo
50mV/div
Io
Io
0.2A/div
0.2A/div
2msec/div
2msec/div
Figure 7.
Transient Response
(0.3→0A)
Figure 8.
Transient Response
(0.3→0A)
Co=1µF,Ta=25℃
Co=1µF,Ta=105℃
VEN
VEN
2V/div
2V/div
Vcc
Vcc
5V/div
5V/div
Vo
5V/div
Vo
5V/div
1msec/div
1msec/div
Figure 9.
Input sequence 1
Figure 10.
Input sequence 1
Co=1µF,Ta=-40℃
Co=1µF,Ta=25℃
www.rohm.com
TSZ02201-0R6R0AN00220-1-2
2021.10.11 Rev.002
© 2012 ROHM Co., Ltd. All rights reserved.
6/21
TSZ22111･15･001
Datasheet
BDxxGA3MEFJ-M BDxxGA3VEFJ-M
VEN
VEN
2V/div
2V/div
Vcc
Vcc
5V/div
5V/div
Vo
Vo
5V/div
5V/div
1msec/div
40msec/div
Figure 12.
OFF sequence 1
Co=1µF,Ta=-40℃
Figure 11.
Input sequence 1
Co=1µF,Ta=105℃
VEN
VEN
2V/div
2V/div
Vcc
Vcc
5V/div
5V/div
Vo
Vo
5V/div
5V/div
40msec/div
40msec/div
Figure 13.
Figure 14.
OFF sequence 1
OFF sequence 1
Co=1µF,Ta=25℃
Co=1µF,Ta=105℃
www.rohm.com
TSZ02201-0R6R0AN00220-1-2
2021.10.11 Rev.002
© 2012 ROHM Co., Ltd. All rights reserved.
7/21
TSZ22111･15･001
Datasheet
BDxxGA3MEFJ-M BDxxGA3VEFJ-M
VEN
2V/div
VEN
2V/div
Vcc
Vcc
5V/div
5V/div
Vo
Vo
5V/div
5V/div
1msec/div
1msec/div
Figure 16.
Input sequence 2
Figure 15.
Input sequence 2
Co=1µF,Ta=25℃
Co=1µF,Ta=-40℃
VEN
VEN
2V/div
2V/div
Vcc
Vcc
5V/div
5V/div
Vo
Vo
5V/div
5V/div
1msec/div
40msec/div
Figure 18.
OFF sequence 2
Co=1µF,Ta=-40℃
Figure 17.
Input sequence 2
Co=1µF,Ta=105℃
www.rohm.com
TSZ02201-0R6R0AN00220-1-2
2021.10.11 Rev.002
© 2012 ROHM Co., Ltd. All rights reserved.
8/21
TSZ22111･15･001
Datasheet
BDxxGA3MEFJ-M BDxxGA3VEFJ-M
VEN
2V/div
VEN
2V/div
Vcc
5V/div
Vcc
5V/div
Vo
5V/div
Vo
5V/div
40msec/div
40msec/div
Figure 20.
OFF sequence 2
Co=1µF,Ta=105℃
Figure 19.
OFF sequence 2
Co=1µF,Ta=25℃
7.0
6.0
5.0
4.0
3.0
900.0
800.0
700.0
600.0
500.0
105
-40
-15
10
35
60
85
-40
-15
10
35
60
85
105
Ta [°C]
Ta [°C]
Figure 21.
Ta-Vo
Figure 22.
Ta-Icc
(Io=0mA)
www.rohm.com
TSZ02201-0R6R0AN00220-1-2
2021.10.11 Rev.002
© 2012 ROHM Co., Ltd. All rights reserved.
9/21
TSZ22111･15･001
Datasheet
BDxxGA3MEFJ-M BDxxGA3VEFJ-M
8.0
6.0
4.0
2.0
0.0
1.0
0.8
0.6
0.4
0.2
0.0
-40
-15
10
35
60
85
105
-40
-15
10
35
60
85
105
Ta [°C]
Ta [°C]
Figure 24.
Ta-IEN
Figure 23.
Ta-ISD
(VEN=0V)
5.0
4.0
3.0
2.0
1.0
0.0
Temp=-40°C
Temp=25°C
Temp=105°C
0
2
4
6
8
10
12
14
IO[A]
VCC [V]
Figure 25.
IO-VO
Figure 26.
Vcc-ISD
(VEN=0V)
www.rohm.com
TSZ02201-0R6R0AN00220-1-2
2021.10.11 Rev.002
© 2012 ROHM Co., Ltd. All rights reserved.
10/21
TSZ22111･15･001
Datasheet
BDxxGA3MEFJ-M BDxxGA3VEFJ-M
6.0
4.0
2.0
Temp=-40°C
Temp=25°C
Temp=105°C
0.0
0
2
4
6
8
10
12
14
VCC [V]
Ta[℃]
Figure 28.
TSD (IO=0mA)
Figure 27.
Vcc-Vo
(Io=0mA)
900.0
800.0
700.0
600.0
500.0
400.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
Temp=-40°C
Temp=25°C
Temp=105°C
Temp=-40°C
Temp=25°C
Temp=105°C
0
0.2
0.4
0.6
0.8
0
0.1
0.2
0.3
Io [A]
Io [A]
Figure 30.
Io-Icc
Figure 29.
OCP
www.rohm.com
TSZ02201-0R6R0AN00220-1-2
2021.10.11 Rev.002
© 2012 ROHM Co., Ltd. All rights reserved.
11/21
TSZ22111･15･001
Datasheet
BDxxGA3MEFJ-M BDxxGA3VEFJ-M
IO [A]
Figure 32.
PSRR(IO=0mA)
Figure 31.
Operation Safety area
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.5
0.4
0.3
0.2
0.1
Temp=-40°C
Temp=25°C
Temp=105°C
105
-40
-15
10
35
60
85
0
0.1
0.2
0.3
Ta [°C]
Io [A]
Figure 33.
Ta-Vdrop
Figure 34.
Minimum dropout Voltage 1
（VCC=6V, Io=0.3A）
（VCC=4.5V）
www.rohm.com
TSZ02201-0R6R0AN00220-1-2
2021.10.11 Rev.002
© 2012 ROHM Co., Ltd. All rights reserved.
12/21
TSZ22111･15･001
Datasheet
BDxxGA3MEFJ-M BDxxGA3VEFJ-M
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.6
0.5
0.4
0.3
Temp=-40°C
Temp=25°C
Temp=105°C
Temp=-40°C
Temp=25°C
Temp=105°C
0.2
0.1
0.0
0
0.1
0.2
0.3
0
0.1
0.2
0.3
Io [A]
Io[A]
Figure 36.
Minimum dropout Voltage 3
Figure 35.
Minimum dropout Voltage 2
（VCC=8.0V）
（VCC=6.0V）
0.6
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.5
0.4
0.3
0.2
0.1
0.0
Temp=-40°C
Temp=25°C
Temp=105°C
Temp=-40°C
Temp=25°C
Temp=105°C
0
0.1
0.2
0.3
0
0.1
0.2
0.3
Io [A]
Io [A]
Figure 38.
Minimum dropout Voltage 5
Figure 37.
Minimum dropout Voltage 4
（VCC=12.0V）
（VCC=10.0V）
www.rohm.com
TSZ02201-0R6R0AN00220-1-2
2021.10.11 Rev.002
© 2012 ROHM Co., Ltd. All rights reserved.
13/21
TSZ22111･15･001
Datasheet
BDxxGA3MEFJ-M BDxxGA3VEFJ-M
●Power Dissipation
◎HTSOP-J8
4.0
⑤3.76W
Measure condition: mounted on a ROHM board,
and IC
Substrate size: 70mm × 70mm × 1.6mm
(Substrate with thermal via)
3.0
・ Solder the substrate and package reverse
exposure heat radiation part
④2.11W
① IC only
2.0
θj-a=249.5℃/W
② 1-layer（copper foil are :0mm×0mm）
θj-a=153.2℃/W
③ 2-layer（copper foil are :15mm×15mm）
θj-a=113.6℃/W
③1.10W
1.0
②0.82W
④ 2-layer（copper foil are :70mm×70mm）
θj-a=59.2℃/W
①0.50W
⑤ 4-layer（copper foil are :70mm×70mm）
θj-a=33.3℃/W
0
0
25
50
75
100
125
150
AmbientTemperature:Ta [℃]
Thermal design should allow operation within the following conditions. Note that the temperatures listed are the allowed
temperature limits, and thermal design should allow sufficient margin from the limits.
1. Ambient temperature Ta can be no higher than 105℃.
2. Chip junction temperature (Tj) can be no higher than 150℃.
Chip junction temperature can be determined as follows:
Calculation based on ambient temperature (Ta)
Tj=Ta+θj-a×W
＜Reference values＞
1-layer substrate (copper foil density 0mm×0mm)
2-layer substrate (copper foil density 15mm×15mm)
2-layer substrate (copper foil density 70mm×70mm)
4-layer substrate (copper foil density 70mm×70mm)
θj-a: HTSOP-J8 153.2℃/W
113.6℃/W
59.2℃/W
33.3℃/W
Substrate size: 70mm×70mm×1.6mm (substrate with thermal via)
Most of the heat loss that occurs in the BDxxGA3MEFJ-M BDxxGA3VEFJ-M is generated from the output Pch FET. Power
loss is determined by the total VCC-VO voltage and output current. Be sure to confirm the system input and output voltage
and the output current conditions in relation to the heat dissipation characteristics of the VCC and VO in the design. Bearing
in mind that heat dissipation may vary substantially depending on the substrate employed (due to the power package
incorporated in the
BDxxGA3MEFJ-M BDxxGA3VEFJ-M make certain to factor conditions such as substrate size into the thermal design.
Power consumption[W] = Input voltage (VCC) - Output voltage (VO) ×IO(Ave)
Example) Where VCC=5.0V, VO=3.3V, IO(Ave) = 0.1A,
Power consumption[W] = 5.0V - 3.3V ×0.1A
=0.17W
www.rohm.com
TSZ02201-0R6R0AN00220-1-2
2021.10.11 Rev.002
© 2012 ROHM Co., Ltd. All rights reserved.
14/21
TSZ22111･15･001
Datasheet
BDxxGA3MEFJ-M BDxxGA3VEFJ-M
●Input-to-Output Capacitor
It is recommended that a capacitor is placed nearby pin between Input pin and GND, output pin and GND.
A capacitor, between input pin and GND, is valid when the power supply impedance is high or drawing is long. Also as for
a capacitor, between output pin and GND, the greater the capacity, more sustainable the line regulation and it makes
improvement of characteristics by load change. However, please check by mounted on a board for the actual application.
Ceramic capacitor usually has difference, thermal characteristics and series bias characteristics, and moreover capacity
decreases gradually by using conditions.
For more detail, please be sure to inquire the manufacturer, and select the best ceramic capacitor.
10
0
Rated Voltage：10V
B1 characteristics
Rated Voltage：10V
B characteristics
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
Rated Voltage：6.3V
B characteristics
Rated Voltage:10V
F characteristics
Rated Voltage：4V
X6S characteristics
0
1
2
3
4
DC Bias Voltage
Ceramic capacitor capacity – DC bias characteristics
(Characteristics example)
●Equivalent Series Resistance ESR (ceramic capacitor etc.)
Please attach an anti-oscillation capacitor between VO and
GND. Capacitor usually has ESR(Equivalent Series
Resistance), and operates stable in ESR-IO range, showed
right. Generally, ESR of ceramic, tantalum and electronic
capacitor etc. is different for each, so please be sure to check
a capacitor which is going to use, and use it inside the stable
operating region, showed right. Then, please evaluate for the
actual application.
ESR – IO characteristics
www.rohm.com
TSZ02201-0R6R0AN00220-1-2
2021.10.11 Rev.002
© 2012 ROHM Co., Ltd. All rights reserved.
15/21
TSZ22111･15･001
Datasheet
BDxxGA3MEFJ-M BDxxGA3VEFJ-M
●Evaluation Board Circuit
C3
C7
8
1
2
VCC
N.C
N.C
EN
VO
C6
C5
C2
C1
R1
R2
7
FB
VCC
GND
3
4
6
5
GND
N.C.
U1
SW1
VO
EN
FIN
●Evaluation Board Parts List
Designation Value
Part No.
Company Designation Value
Part No.
Company
R1
R2
R3
R4
R5
R6
C1
43kΩ
8.2kΩ
‐
MCR01PZPZF4302
ROHM
C4
C5
C6
C7
C8
C9
C10
‐
‐
‐
MCR01PZPZF8201
‐
ROHM
‐
1µF
CM105X7R105K16AB KYOCERA
‐
‐
‐
‐
‐
‐
‐
‐
‐
‐
‐
‐
‐
‐
‐
‐
‐
‐
‐
‐
1µF
CM105B105K16A
KYOCERA
‐
BD00GA3MEFJ-M
BD00GA3VEFJ-M
‐
C2
C3
‐
‐
‐
‐
U1
U2
‐
‐
ROHM
‐
●Board Layout
EN
GND
CIN
(
)
V
CC VIN
R2
COUT
R1
VO
･Input capacitor CIN of VCC (VIN) should be placed very close to VCC(VIN) pin as possible, and used broad wiring pattern.
Output capacitor COUT also should be placed close to IC pin as possible. In case connected to inner layer GND plane,
please use several through hole.
・FB pin has comparatively high impedance, and is apt to be effected by noise, so floating capacity should be minimum as
possible. Please be careful in wiring drawing
・Please take GND pattern space widely, and design layout to be able to increase radiation efficiency.
・For output voltage setting
Output voltage can be set by FB pin voltage（0.800V typ.）and external resistance R1, R2.
R1+R2
VO = VFB×
R2
（The use of resistors with R1+R2=1k to 90kΩ is recommended）
www.rohm.com
TSZ02201-0R6R0AN00220-1-2
2021.10.11 Rev.002
© 2012 ROHM Co., Ltd. All rights reserved.
16/21
TSZ22111･15･001
Datasheet
BDxxGA3MEFJ-M BDxxGA3VEFJ-M
●I/O Equivalent Circuits (Output Voltage Vairable type)
8pin (VCC) / 1pin (VO)
2pin (FB)
5pin (EN)
2pin (FB)
8pin (VCC
)
5pin (EN)
2MΩ
1MΩ
1pin (VO)
●I/O Equivalent Circuits (Output Voltage Fixed type)
8pin (VCC) / 1pin (VO)
2pin (VO_S
)
5pin (EN)
8pin (VCC
)
5pin (EN)
2pin (VO_S
)
2MΩ
1MΩ
1pin (VO)
www.rohm.com
TSZ02201-0R6R0AN00220-1-2
2021.10.11 Rev.002
© 2012 ROHM Co., Ltd. All rights reserved.
17/21
TSZ22111･15･001
Datasheet
BDxxGA3MEFJ-M BDxxGA3VEFJ-M
●Operational Notes
(1). Absolute maximum ratings
An excess in the absolute maximum ratings, such as supply voltage, temperature range of operating conditions, etc.,
can break down the devices, thus making impossible to identify breaking mode, such as a short circuit or an open
circuit. If any over rated values will expect to exceed the absolute maximum ratings, consider adding circuit protection
devices, such as fuses.
(2). Connecting the power supply connector backward
Connecting of the power supply in reverse polarity can damage IC. Take precautions when connecting the power
supply lines. An external direction diode can be added.
(3). Power supply lines
Design PCB layout pattern to provide low impedance GND and supply lines. To obtain a low noise ground and supply
line, separate the ground section and supply lines of the digital and analog blocks. Furthermore, for all power supply
terminals to ICs, connect a capacitor between the power supply and the GND terminal. When applying electrolytic
capacitors in the circuit, not that capacitance characteristic values are reduced at low temperatures.
(4). GND voltage
The potential of GND pin must be minimum potential in all operating conditions.
(5). Thermal design
Use a thermal design that allows for a sufficient margin in light of the power dissipation (Pd) in actual operating
conditions.
(6). Inter-pin shorts and mounting errors
Use caution when positioning the IC for mounting on printed circuit boards. The IC may be damaged if there is any
connection error or if pins are shorted together.
(7). Actions in strong electromagnetic field
Use caution when using the IC in the presence of a strong electromagnetic field as doing so may cause the IC to
malfunction.
(8). ASO
When using the IC, set the output transistor so that it does not exceed absolute maximum ratings or ASO.
(9). Thermal shutdown circuit
The IC incorporates a built-in thermal shutdown circuit (TSD circuit). The thermal shutdown circuit (TSD circuit) is
designed only to shut the IC off to prevent thermal runaway. It is not designed to protect the IC or guarantee its
operation. Do not continue to use the IC after operating this circuit or use the IC in an environment where the
operation of this circuit is assumed.
TSD ON Temperature[℃] (typ.)
Hysteresis Temperature [℃] (typ.)
BDxxGA3MEFJ-M
BDxxGA3VEFJ-M
175
15
(10). Testing on application boards
When testing the IC on an application board, connecting a capacitor to a pin with low impedance subjects the IC to
stress. Always discharge capacitors after each process or step. Always turn the IC’s power supply off before
connecting it to or removing it from a jig or fixture during the inspection process. Ground the IC during assembly
steps as an antistatic measure. Use similar precaution when transporting or storing the IC.
www.rohm.com
TSZ02201-0R6R0AN00220-1-2
2021.10.11 Rev.002
© 2012 ROHM Co., Ltd. All rights reserved.
18/21
TSZ22111･15･001
Datasheet
BDxxGA3MEFJ-M BDxxGA3VEFJ-M
(11). Regarding input pin of the IC
This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them
isolated.
P-N junctions are formed at the intersection of these P layers with the N layers of other elements, creating a parasitic
diode or transistor. For example, the relation between each potential is as follows:
When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.
When GND > Pin B, the P-N junction operates as a parasitic transistor.
Parasitic diodes can occur inevitable in the structure of the IC.
The operation of parasitic diodes can result in mutual interference among circuits, operational faults, or physical
damage. Accordingly, methods by which parasitic diodes operate, such as applying a voltage that is lower than the
GND(P substrate) voltage to an input pin, should not be used.
Transistor (NPN)
Resistor
B
Pin A
Pin B
Pin B
C
E
Pin A
B
C
E
N
N
N
P+
P+
P+
P+
P
P
Parasitic
element
N
N
N
Parasitic
element
P substrate
P substrate
GND
GND
GND
GND
Parasitic element
Parasitic element
Other adjacent elements
(12). Ground Wiring Pattern.
When using both small signal and large current GND patterns, it is recommended to isolate the two ground patterns,
placing a single ground point at the ground potential of application so that the pattern wiring resistance and voltage
variations caused by large currents do not cause variations in the small signal ground voltage. Be careful not to
change the GND wiring pattern of any external components, either.
Status of this document
The Japanese version of this document is formal specification. A customer may use this translation version only for a reference
to help reading the formal version.
If there are any differences in translation version of this document formal version takes priority.
www.rohm.com
TSZ02201-0R6R0AN00220-1-2
2021.10.11 Rev.002
© 2012 ROHM Co., Ltd. All rights reserved.
19/21
TSZ22111･15･001
Datasheet
BDxxGA3MEFJ-M BDxxGA3VEFJ-M
●Physical Dimension Tape and Reel Information
●Marking Diagram
HTSOP-J8 (TOP VIEW)
Part Number Marking
x x G A 3 y
LOT Number
1PIN MARK
Part Number Marking
00GA3M
15GA3M
18GA3M
25GA3M
30GA3M
33GA3M
50GA3M
60GA3M
70GA3M
80GA3M
90GA3M
J0GA3M
J2GA3M
00GA3V
15GA3V
18GA3V
25GA3V
30GA3V
33GA3V
50GA3V
60GA3V
70GA3V
80GA3V
90GA3V
J0GA3V
J2GA3V
Part Number
BD00GA3MEFJ-ME2
BD15GA3MEFJ-ME2
BD18GA3MEFJ-ME2
BD25GA3MEFJ-ME2
BD30GA3MEFJ-ME2
BD33GA3MEFJ-ME2
BD50GA3MEFJ-ME2
BD60GA3MEFJ-ME2
BD70GA3MEFJ-ME2
BD80GA3MEFJ-ME2
BD90GA3MEFJ-ME2
BDJ0GA3MEFJ-ME2
BDJ2GA3MEFJ-ME2
BD00GA3VEFJ-ME2
BD15GA3VEFJ-ME2
BD18GA3VEFJ-ME2
BD25GA3VEFJ-ME2
BD30GA3VEFJ-ME2
BD33GA3VEFJ-ME2
BD50GA3VEFJ-ME2
BD60GA3VEFJ-ME2
BD70GA3VEFJ-ME2
BD80GA3VEFJ-ME2
BD90GA3VEFJ-ME2
BDJ0GA3VEFJ-ME2
BDJ2GA3VEFJ-ME2
www.rohm.com
TSZ02201-0R6R0AN00220-1-2
2021.10.11 Rev.002
© 2012 ROHM Co., Ltd. All rights reserved.
20/21
TSZ22111･15･001
Datasheet
BDxxGA3MEFJ-M BDxxGA3VEFJ-M
●Revision History
Date
Revision
Changes
31.Aug.2012
11.Oct.2021
001
002
New Release
Add BDxxGA3VEFJ-M Series
www.rohm.com
TSZ02201-0R6R0AN00220-1-2
2021.10.11 Rev.002
© 2012 ROHM Co., Ltd. All rights reserved.
21/21
TSZ22111･15･001
Notice
Precaution on using ROHM Products
(Note 1)
1. If you intend to use our Products in devices requiring extremely high reliability (such as medical equipment
,
aircraft/spacecraft, nuclear power controllers, etc.) and whose malfunction or failure may cause loss of human life,
bodily injury or serious damage to property (“Specific Applications”), please consult with the ROHM sales
representative in advance. Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way
responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of any
ROHM’s Products for Specific Applications.
(Note1) Medical Equipment Classification of the Specific Applications
JAPAN
USA
EU
CHINA
CLASSⅢ
CLASSⅣ
CLASSⅡb
CLASSⅢ
CLASSⅢ
CLASSⅢ
2. ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor
products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate
safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which
a failure or malfunction of our Products may cause. The following are examples of safety measures:
[a] Installation of protection circuits or other protective devices to improve system safety
[b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure
3. Our Products are not designed under any special or extraordinary environments or conditions, as exemplified below.
Accordingly, ROHM shall not be in any way responsible or liable for any damages, expenses or losses arising from the
use of any ROHM’s Products under any special or extraordinary environments or conditions. If you intend to use our
Products under any special or extraordinary environments or conditions (as exemplified below), your independent
verification and confirmation of product performance, reliability, etc, prior to use, must be necessary:
[a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents
[b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust
[c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2,
H2S, NH3, SO2, and NO2
[d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves
[e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items
[f] Sealing or coating our Products with resin or other coating materials
[g] Use of our Products without cleaning residue of flux (Exclude cases where no-clean type fluxes is used.
However, recommend sufficiently about the residue.); or Washing our Products by using water or water-soluble
cleaning agents for cleaning residue after soldering
[h] Use of the Products in places subject to dew condensation
4. The Products are not subject to radiation-proof design.
5. Please verify and confirm characteristics of the final or mounted products in using the Products.
6. In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse, is applied,
confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power
exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect
product performance and reliability.
7. De-rate Power Dissipation depending on ambient temperature. When used in sealed area, confirm that it is the use in
the range that does not exceed the maximum junction temperature.
8. Confirm that operation temperature is within the specified range described in the product specification.
9. ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in
this document.
Precaution for Mounting / Circuit board design
1. When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product
performance and reliability.
2. In principle, the reflow soldering method must be used on a surface-mount products, the flow soldering method must
be used on a through hole mount products. If the flow soldering method is preferred on a surface-mount products,
please consult with the ROHM representative in advance.
For details, please refer to ROHM Mounting specification
Notice-PAA-E
Rev.004
© 2015 ROHM Co., Ltd. All rights reserved.
Precautions Regarding Application Examples and External Circuits
1. If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the
characteristics of the Products and external components, including transient characteristics, as well as static
characteristics.
2. You agree that application notes, reference designs, and associated data and information contained in this document
are presented only as guidance for Products use. Therefore, in case you use such information, you are solely
responsible for it and you must exercise your own independent verification and judgment in the use of such information
contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses
incurred by you or third parties arising from the use of such information.
Precaution for Electrostatic
This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper
caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be
applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron,
isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).
Precaution for Storage / Transportation
1. Product performance and soldered connections may deteriorate if the Products are stored in the places where:
[a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2
[b] the temperature or humidity exceeds those recommended by ROHM
[c] the Products are exposed to direct sunshine or condensation
[d] the Products are exposed to high Electrostatic
2. Even under ROHM recommended storage condition, solderability of products out of recommended storage time period
may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is
exceeding the recommended storage time period.
3. Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads
may occur due to excessive stress applied when dropping of a carton.
4. Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of
which storage time is exceeding the recommended storage time period.
Precaution for Product Label
A two-dimensional barcode printed on ROHM Products label is for ROHM’s internal use only.
Precaution for Disposition
When disposing Products please dispose them properly using an authorized industry waste company.
Precaution for Foreign Exchange and Foreign Trade act
Since concerned goods might be fallen under listed items of export control prescribed by Foreign exchange and Foreign
trade act, please consult with ROHM in case of export.
Precaution Regarding Intellectual Property Rights
1. All information and data including but not limited to application example contained in this document is for reference
only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any
other rights of any third party regarding such information or data.
2. ROHM shall not have any obligations where the claims, actions or demands arising from the combination of the
Products with other articles such as components, circuits, systems or external equipment (including software).
3. No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any
third parties with respect to the Products or the information contained in this document. Provided, however, that ROHM
will not assert its intellectual property rights or other rights against you or your customers to the extent necessary to
manufacture or sell products containing the Products, subject to the terms and conditions herein.
Other Precaution
1. This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM.
2. The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written
consent of ROHM.
3. In no event shall you use in any way whatsoever the Products and the related technical information contained in the
Products or this document for any military purposes, including but not limited to, the development of mass-destruction
weapons.
4. The proper names of companies or products described in this document are trademarks or registered trademarks of
ROHM, its affiliated companies or third parties.
Notice-PAA-E
Rev.004
© 2015 ROHM Co., Ltd. All rights reserved.
Daattaasshheeeett
General Precaution
1. Before you use our Products, you are requested to carefully read this document and fully understand its contents.
ROHM shall not be in any way responsible or liable for failure, malfunction or accident arising from the use of any
ROHM’s Products against warning, caution or note contained in this document.
2. All information contained in this document is current as of the issuing date and subject to change without any prior
notice. Before purchasing or using ROHM’s Products, please confirm the latest information with a ROHM sales
representative.
3. The information contained in this document is provided on an “as is” basis and ROHM does not warrant that all
information contained in this document is accurate and/or error-free. ROHM shall not be in any way responsible or
liable for any damages, expenses or losses incurred by you or third parties resulting from inaccuracy or errors of or
concerning such information.
Notice – WE
Rev.001
© 2015 ROHM Co., Ltd. All rights reserved.
相关型号：
BD60GA3VEFJ-M (新产品)
BDxxGA3VEFJ-M is a LDO regulator with output current 0.3A. The output accuracy is ±1% of output vo
ROHM
BD60GA3WEFJ
BDxxGA3WEFJ系列是可提供0.3A输出电流的稳压器。输出精度为±1%。有可使用外接电阻在1.5V～13.0V范围内任意设置输出电压的可变型以及1.5V/1.8V/2.5V/3.0V/3.3V/5V/6V/7V/8V/9V/10V/12V固定输出型两种。封装组件采用散热性优良的HTSOP-J8。可用于数字家电等广泛用途。本机型内置用于防止因输出短路等发生IC破坏的过电流保护电路、关断时使电路电流为0µA的ON/OFF开关、以及防止因过负荷状态等使IC发生热破坏的温度保护电路。另外，采用了陶瓷电容器，有助于整机的小型化和长寿化。
ROHM
BD60GA3WNUX
BDxxGA3WEFJ / BDxxGA3WNUX系列是可提供0.3A输出电流的稳压器。输出精度为±1%。有可使用外接电阻在1.5V～13.0V范围内任意设置输出电压的可变型以及1.5V/1.8V/2.5V/3.0V/3.3V/5V/6V/7V/8V/9V/10V/12V固定输出型两种。封装组件备有散热性优良的HTSOP-J8和超小型VSON008X2030。可用于数字家电等广泛用途。本机型内置用于防止因输出短路等发生IC破坏的过电流保护电路、关断时使电路电流为0µA的ON/OFF开关、以及防止因过负荷状态等使IC发生热破坏的温度保护电路。另外，采用了陶瓷电容器，有助于整机的小型化和长寿化。
ROHM
BD60GA5MEFJ-M
BDxxGA5MEFJ-M系列是可提供0.5A输出电流的稳压器。输出精度为±1%。有可使用外接电阻在1.5V～13.0V范围内任意设置输出电压的可变型以及1.5V/1.8V/2.5V/3.0V/3.3V/5V/6V/7V/8V/9V/10V/12V固定输出型两种。封装组件采用散热性优良的HTSOP-J8。本机型内置用于防止因输出短路等发生IC破坏的过电流保护电路、关断时使电路电流为0µA的ON/OFF开关、以及防止因过负荷状态等使IC发生热破坏的温度保护电路。另外，采用了陶瓷电容器，有助于整机的小型化和长寿化。
ROHM
©2020 ICPDF网 联系我们和版权申明