BD6551G_11 [ROHM]
Silicon Monolithic Integrated Circuit; 硅单片集成电路
| 型号： | BD6551G_11 |
| 厂家： | 
ROHM |
| 描述： | Silicon Monolithic Integrated Circuit |
| 文件： | 总5页 (文件大小：160K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1/4
STRUCTURE
PRODUCT
Silicon Monolithic Integrated Circuit
CONSTANT VOLTAGE AND CONSTANT CURRENT
CONTROLLER FOR BATTERY CHARGERS AND ADAPTORS
TYPE
ＢＤ６５５１Ｇ
FEATURE
・ Constant voltage and constant current control
・ Power supply voltage: 1.8V～12V
・ High accuracy reference voltage: 1.21V±1%
・ An accuracy for current-detecting voltage: 200mV±2%
○ ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
PARAMETER
Symbol
Limit
Unit
Power Supply Voltage
VMAX
VICTMAX
Pd
-0.3 ～ 14
-0.3 ～ VCC
675 *1
V
V
ICT Pin Maximum Voltage
Power Dissipation
mW
℃
Operating Temperature Range
Maximum Junction Temperature
Topr
0 ～ +85
150
Tjmax
℃
Storage Temperature Range
Tstg
-55 ～ +150
℃
*1 Pd derated at 5.4mW/℃ for temperature above Ta=25℃,
mounted on 70mm×70mm×1.6mm glass-epoxy PCB.
○ OPERATING CONDITIONS (Ta=0～+85℃)
PARAMETER
Symbol
VCC
Limit
Unit
V
Power Supply Voltage
1.8～12
*2
*2 Except an amplifier for voltage control loop guaranteed above VCC=2.5V.
REV. A
2/4
○ ELECTRICAL CHARACTERISTICS (Ta=25℃ and Vcc=+5V (unless otherwise specified))
Limit
PARAMETER
Symbol
UNIT
Conditions
MIN. TYP. MAX.
【Total Current Consumption】
Total Supply Current - not taking the output
sinking current into account
【Voltage Control Loop】
Transconduction Gain(VCT).
Sink Current Only
ICC
-
0.6
2
mA
Ta=25℃
Ta=25℃
GMV
1.0
4.5
-
mA/mV
V
1.198
1.186
1.21
1.21
1.222
1.234
Ta=25℃
Voltage Control Loop Reference at 1.5mA
sinking current
VREF
0 < Ta < 85℃
【Current Control Loop】
Transconduction Gain(ICT).
Sink Current Only
GMI
1.5
3.5
-
mA/mV
Ta=25℃
196
192
13
200
200
23
204
208
33
Ta=25℃
0 < Ta < 85℃
Ta=25℃
Current Control Loop Reference at 2.5mA
sinking current
VSE
Ibi
ｍV
μA
Current out of pin ICT at -200mV
【Output Stage】
Output Short Circuit Current, Output to VCC,
Sink Current Only
Ta=25℃,OUT=VCC,
VSE=0V, ICT=-0.3V
IOS
-
25
50
mA
【UVLO】
UVLO Threshold Voltage
UVLO Hysteresis Width
VVT
1.8
40
1.9
2.0
V
VCC=L→H
DVVT
100
160
mV
Ta=25℃
VCC=OUT=1.8V
Output Short Circuit Current at Full Drive
IOS2
5.0
-
-
mA
● This product is not designed for protection against radio active rays.
○ PACKEGE, MARKING SPECIFICATION
SSOP6 (UNIT:mm)
REV. A
3/4
○ BLOCK DIAGRAM
VCC
6
1.21V
+
-
OUT
3
VOLTAGE
REFERENCE
1 VCT
VCC
+
-
-
+
2
GND
UVLO
4
5
ICT
VSE
○ PIN No. & PIN NAME
PIN No.
PIN Name
Function
1
2
3
4
5
VCT
GND
OUT
ICT
Input Pin of the Voltage Control Loop
Ground Line. 0V Reference For All Voltages
Output Pin. Sinking Current Only
Input Pin of the Current Control Loop(+)
Input Pin of the Current Control Loop(-)
Positive Power Supply Line. This pin doubles
low voltage input detection pin.
VSE
6
VCC
REV. A
4/4
○ Operation Notes
1) Absolute maximum ratings
An excess in the absolute maximum rating, such as supply voltage, temperature range of operating conditions, etc.,
can break down the devices, thus making impossible to identify breaking mode, such as a short circuit or an open
circuit. If any over rated values will expect to exceed the absolute maximum ratings, consider adding circuit protection
devices, such as fuses.
2) GND voltage
The potential of GND pin must be minimum potential in all condition. As an exception, the circuit design allows voltages
up to -0.3 V to be applied to the ICT pin.
3) Thermal design
Use a thermal design that allows for a sufficient margin in light of the power dissipation (Pd) in actual operating
conditions.
4) Inter-pin shorts and mounting errors
Use caution when positioning the IC for mounting on printed circuit boards. The IC may be damaged if there is any
connection error or if pins are shorted together.
5) Actions in strong electromagnetic field
Use caution when using the IC in the presence of a strong electromagnetic field as doing so may cause the IC to
malfunction.
6) Mutual impedance
Power supply and ground wiring should reflect consideration of the need to lower mutual impedance and minimize
ripple as much as possible (by making wiring as short and thick as possible or rejecting ripple by incorporating
inductance and capacitance).
7) Regarding input pin of the IC
This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them
isolated. P-N junctions are formed at the intersection of these P layers with the N layers of other elements, creating a
parasitic diode or transistor. For example, as shown in the figures below, the relation between each potential is as
follows:
When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.
When GND > Pin B, the P-N junction operates as a parasitic transistor.
Parasitic diodes can occur inevitable in the structure of the IC. The operation of parasitic diodes can result in mutual
interference among circuits, operational faults, or physical damage. Accordingly, methods by which parasitic diodes
operate, such as applying a voltage that is lower than the GND (P substrate) voltage to an input pin, should not be
used. Although the circuit design allows voltages up to -0.3 V to be applied to the ICT pin, voltages lower than this may
cause the behavior described above. Use caution when designing the circuit.
Transistor (NPN)
Resistor
(Pin A)
B
(Pin B)
E
C
GND
N
P+
P+
P+
P+
P
P
N
N
N
N
N
N
P substrate
P substrate
GND
Parasitic elements
(Pin B)
Parasitic elements
(Pin A)
GND
C
B
Parasitic elements
E
GND
GND
Other Adjacent Elements
Parasitic elements
Simplified structure of a Monolithic IC
REV. A
Notice
N o t e s
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The content specified herein is for the purpose of introducing ROHM's products (hereinafter
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which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specified in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.
The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
implicitly, any license to use or exercise intellectual property or other rights held by ROHM and
other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the
use of such technical information.
The Products specified in this document are intended to be used with general-use electronic
equipment or devices (such as audio visual equipment, office-automation equipment, commu-
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