BD8220EFV [ROHM]

Silicon Monolithic Integrated Circuit; 硅单片集成电路
BD8220EFV
型号: BD8220EFV
厂家: ROHM    ROHM
描述:

Silicon Monolithic Integrated Circuit
硅单片集成电路

文件: 总5页 (文件大小:126K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
1/4  
Structure  
Silicon Monolithic Integrated Circuit  
Power Driver for Compact disc player  
Product Series  
type  
BD8220EFV  
Feature  
: ・4CH BTL Driver.  
Employs the HTSSOP-B24PIN power package for compaction.  
Has a wide dynamic range.PowVcc1=8V, RL=86.0(typ.))  
The thermal shutdown circuit contained.  
Switches CH2 input by Control input terminal(CNT).  
Incorporates mute function by CNT terminal and mute terminal.  
Absolute maximum ratings(Ta=25)  
Parameter  
Power supply voltage  
Symbol  
Limits  
15  
Unit  
PowVcc1,PowVcc2  
BIAS1, BIAS2, LDIN,  
SLIN, IN1, IN3, IN4  
CNT  
Input terminal  
PowVcc 2  
CNT terminal  
MUTE terminal  
PowVcc 2  
PowVcc 2  
1.1*1  
MUTE1,2, 3 4  
Power dissipation  
Pd  
4.0*2  
-40+85 ℃  
-55+150 ℃  
Operating temperature range  
Storage temperature  
Topr  
Tstg  
Junction temperature  
Tjmax  
+150  
*1 70mm×70mm×1.6mm,occupied copper foil is less than 3%,glass epoxy standard board mounting.  
Reduce power by 8.8mW for each degree above 25.  
*2 Exclusive standard board mounting. Reduce power by 32.0mW for each degree above 25.  
Operating conditions  
(Set the power supply voltage taking allowable dissipation into considering.)  
PowVcc 1,2 4.5 10(V)  
Please use it with PowVcc 1= PowVcc 2  
Status of this document  
The Japanese version of this document is the formal specification.Acustomer may use this translation version only for a reference to help reading the formal version.  
If there are any differences in translation version of this document, formal version takes priority.  
Be careful to handle because the content of the description of this material might correspond to the labor (technology in the design, manufacturing, and use) in foreign country exchange  
and Foreign Trade Control Law.  
Aradiation is not designed.  
REV.A  
REV. A  
2/4  
Electrical characteristics  
Unless otherwise noted, Ta=25, PowVcc1=PowVcc2=8V, BIAS1=1.65V, BIAS2=1.65V, RL=8Ω)  
Parameter  
Symbol  
IQ  
MIN  
TYP  
30  
MAX  
45  
Unit  
mA  
Condition  
Quiescent dissipation current  
< Driver >  
At no-load  
Output offset voltage (CH1,2)  
Output offset voltage (CH3,4)  
Maximum output amplitude (CH1,2)  
Maximum output amplitude (CH3,4)  
Closed circuit voltage gain (CH1,2)  
Closed circuit voltage gain (CH3,4)  
Input impedance (CH1,2)  
Voof1  
Voof2  
VOM1  
VOM2  
Gvc1  
-100  
-50  
5.4  
0
0
100  
50  
mV  
mV  
V
6.0  
5.3  
23.5  
17.5  
20  
4.7  
V
VIN=±0.3V  
VIN=±0.3V  
PIN21,22,24  
PIN18,19  
21.5  
15.5  
13  
25.5  
19.5  
27  
dB  
dB  
kΩ  
kΩ  
Gvc2  
ZIN1  
ZIN2  
Input impedance (CH3,4)  
31  
47  
63  
< Each function terminal >  
2.0  
MUTE terminal low level input voltage  
MUTE terminal high level input voltage  
CNT terminal low level input voltage  
CNT terminal high level input voltage  
VML  
VMH  
0.5  
V
PIN13,14,15  
V
VCNTL  
VCNTH  
IMTL  
IMTH  
ICNTL  
ICNTH  
IB1  
0.5  
V
2.0  
-15  
V
μA  
μA  
μA  
μA  
μA  
μA  
MUTE terminal low level input current  
MUTE terminal high level input current  
15  
PIN13,14,15=0V  
PIN13,14,15=5V  
PIN23=0V  
0
85  
0
170  
15  
CNT terminal low level input current  
CNT terminal high level input current  
BIAS 1 input terminal input current  
BIAS 2 input terminal input current  
-15  
85  
52  
52  
170  
104  
104  
PIN23=5V  
PIN17=1.65V  
PIN20=1.65V  
IB2  
VININ1, SLIN, IN3, and the IN4 voltage are the BIAS1 voltages., LDIN voltage are the BIAS2 voltages  
Package outlines  
D8220EFV  
Lot.No  
HTSSOP-B24(UNITmm)  
REV. A  
3/4  
Block diagram  
24  
23  
22  
21  
20  
19  
18  
17  
16  
15  
14  
13  
20k  
80k  
80k  
20k  
47k  
20k  
47k  
PreGND  
BIAS1  
MUTE  
34  
CNT  
MUTE2  
MUTE1  
BIAS2  
94k  
94k  
80k  
T.S.D  
LEVEL  
SHIFT  
LEVEL  
SHIFT  
LEVEL  
SHIFT  
LEVEL  
SHIFT  
10k 10k  
10k 10k  
10k 10k  
10k 10k  
10k  
10k  
10k  
10k  
10k  
CH3  
10k  
10k  
10k  
PowVcc2  
PowVcc1 PowGND1  
PowGND2  
CH1  
CH2  
CH4  
2
3
4
5
6
7
8
9
10  
11  
12  
1
T.S.DThermal Shut-Down  
Pin description  
No.  
1
Symbol  
Description  
No.  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
Symbol  
MUTE1  
MUTE2  
Description  
MUTE 1 terminal  
PowVcc1 CH1,2 power supply terminal  
PowGND Power GND  
2
MUTE 2 terminal  
3
VO1(-)  
VO1(+)  
VO2(-)  
VO2(+)  
VO3(-)  
VO3(+)  
VO4(-)  
VO4(+)  
Driver CH1 negative output  
Driver CH1 positive output  
Driver CH2 negative output  
Driver CH2 positive output  
Driver CH3 negative output  
Driver CH3 positive output  
Driver CH4 negative output  
Driver CH4 positive output  
MUTE34 MUTE 3,4 terminal  
4
PreGND  
BIAS1  
IN4  
PreGND  
5
BIAS1 input  
6
CH4 input  
7
IN3  
CH3 input  
8
BIAS2  
LDIN  
SLIN  
CNT  
LD Reference voltage switch terminal  
LD input  
9
10  
11  
12  
SL input  
PowGND Power GND  
PowVcc2 Pre Block and CH3,4 power supply terminal  
Control input terminal  
IN1 input  
IN1  
REV. A  
4/4  
Cautions in using the IC  
1.  
Absolute maximum ratings  
We are careful enough for quality control about this IC. So, there is no problem under normal operation, excluding that it exceeds the absolute maximum ratings. However, this IC  
might be destroyed when the absolute maximum ratings, such as impressed voltages or the operating temperature range, is exceeded, and whether the  
destruction is short circuit mode or open circuit mode cannot be specified. Please take into consideration the physical countermeasures for safety, such as fusing, if a particular  
mode that exceeds the absolute maximum rating is assumed.  
2.  
3.  
Reverse polarity connection  
Connecting the power line to the IC in reverse polarity (from that recommended) will damage the part. Please utilize the direction protection device as a  
diode in the supply line and motor coil line.  
Power supply line  
Due to return of regenerative current by reverse electromotive force, using electrolytic and ceramic suppress filter capacitors (0.1µF) close to the IC power  
input terminals (Vcc and GND) are recommended. Please note the electrolytic capacitor value decreases at lower temperatures and examine to dispense  
physical measures for safety.  
And, for ICs with more than one power supply, it is possible that rush current may flow instantaneously due to the internal powering sequence and delays.  
Therefore, give special consideration to power coupling capacitance, power wiring, width of GND wiring, and routing of wiring.  
4.  
5.  
GND line  
Please keep the GND line the lowest potential always, and check the GND voltage when transient voltages are connected to the IC.  
Thermal design  
Do not exceed the power dissipation (Pd) of the package specification rating under actual operation, and please design enough temperature margins.  
This product has exposed the frame to the back side of the package, but please note that it is assumed to use heat radiation efficiency by the heat  
radiation for this part. Please take the heat radiation pattern on not only the surface of the substrate but also the back of the substrate widely.  
6.  
Short circuit mode between terminals and wrong mounting  
Do not mount the IC in the wrong direction and displacement, and be careful about the reverse-connection of the power connector. Moreover, this IC  
might be destroyed when the dust short the terminals between them or GND.  
7.  
8.  
9.  
Radiation  
Strong electromagnetic radiation can cause operation failures.  
ASO (Area of Safety Operation)  
Do not exceed the maximumASO and the absolute maximum ratings of the output driver.  
TSD (Thermal Shut-Down)  
The TSD is activated when the junction temperature (Tj) exceeds Tjmax, and the output terminal is switched to OPEN.  
The guarantee and protection of set are not purpose. Therefore, please do not use this IC after TSD circuit operates, nor useit for assumption that  
operates the TSD circuit.  
10. Capacitor between output driver and GND  
If a large capacitor is connected between the output driver and GND, this IC might be destroyed when Vcc becomes 0V or GND, because the electric  
charge accumulated in the capacitor flows to the output driver. Please set said capacitor to smaller than 0.1µF.  
11. Inspection by the set circuit board  
The stress might hang to IC by connecting the capacitor to the terminal with low impedance. Then, please discharge electricity in each and all  
process. Moreover, when attaching or detaching from jig in the inspection process, please turn off the power before mounting the IC, and turn on after  
mounting the IC, and vice versa. In addition, please take into consideration the countermeasures for electrostatic damage, such as giving the earth in  
assembly process, transportation or preservation.  
12. Input terminal  
This IC is a monolithic IC, and has P+ isolation and P substrate for the element separation. Therefore, a parasitic PN junction is firmed in this P-layer  
and N-layer of each element. For instance, the resistor or the transistor is connected to the terminal as shown in the figure below. When the GND  
voltage potential is greater than the voltage potential at TerminalsAon the resistor, at Terminal B on the transistor, the PN junction operates as a  
parasitic diode. In addition, the parasitic NPN transistor is formed in said parasitic diode and the N layer of surrounding elements close to said  
parasitic diode. These parasitic elements are formed in the IC because of the voltage relation. The parasitic element operatingcauses the interference  
of circuit operation, then the wrong operation and destruction. Therefore, please be careful so as not to operate the parasiticelements by impressing to  
input terminals lower voltage than GND (P substrate). Please do not apply the voltage to the input terminal when the power-supply voltage is  
not impressed. Moreover, please impress each input terminal lower than the power-supply voltage or equal to the specified range in the guaranteed  
voltage when the power-supply voltage is impressing.  
Resistor  
Transistor(NPN)  
Terminal-A  
Terminal-B  
Terminal-B  
C
B
E
Terminal-A  
C
E
B
Parasitic  
element  
P+  
P
P+  
P+  
P
P+  
Surrounding  
elements  
Parasitic  
element  
P-Substrate  
P-Substrate  
GND  
Parasitic  
element  
Parasitic  
element  
GND  
GND  
GND  
Simplified structure of IC  
13. Earth wiring pattern  
If small signal GND and large current GND exist, disperse their pattern. In addition, for voltage change by pattern wiring impedance and large current  
not to change voltage of small signal GND, each ground terminal of IC must be connected at the one point on the set circuit board.As for GND of external  
parts, it is similar to the above-mentioned.  
REV. A  
Appendix  
Notes  
No technical content pages of this document may be reproduced in any form or transmitted by any  
means without prior permission of ROHM CO.,LTD.  
The contents described herein are subject to change without notice. The specifications for the  
product described in this document are for reference only. Upon actual use, therefore, please request  
that specifications to be separately delivered.  
Application circuit diagrams and circuit constants contained herein are shown as examples of standard  
use and operation. Please pay careful attention to the peripheral conditions when designing circuits  
and deciding upon circuit constants in the set.  
Any data, including, but not limited to application circuit diagrams information, described herein  
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM  
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any  
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of  
whatsoever nature in the event of any such infringement, or arising from or connected with or related  
to the use of such devices.  
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or  
otherwise dispose of the same, no express or implied right or license to practice or commercially  
exploit any intellectual property rights or other proprietary rights owned or controlled by  
ROHM CO., LTD. is granted to any such buyer.  
Products listed in this document are no antiradiation design.  
The products listed in this document are designed to be used with ordinary electronic equipment or devices  
(such as audio visual equipment, office-automation equipment, communications devices, electrical  
appliances and electronic toys).  
Should you intend to use these products with equipment or devices which require an extremely high level  
of reliability and the malfunction of which would directly endanger human life (such as medical  
instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers  
and other safety devices), please be sure to consult with our sales representative in advance.  
It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance  
of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow  
for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in  
order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM  
cannot be held responsible for any damages arising from the use of the products under conditions out of the  
range of the specifications or due to non-compliance with the NOTES specified in this catalog.  
Thank you for your accessing to ROHM product informations.  
More detail product informations and catalogs are available, please contact your nearest sales office.  
THE AMERICAS / EUPOPE / ASIA / JAPAN  
ROHM Customer Support System  
Contact us : webmaster@ rohm.co.jp  
www.rohm.com  
TEL : +81-75-311-2121  
FAX : +81-75-315-0172  
Copyright © 2007 ROHM CO.,LTD.  
21, Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan  
Appendix1-Rev2.0  

相关型号:

BD8222EFV

Silicon Monolithic Integrated Circuit
ROHM

BD8224EFV

Silicon Monolithic Integrated Circuit
ROHM

BD8226EFV

Silicon Monolithic Integrated Circuit
ROHM

BD8226EFV-E2

CD Motor Driver,
ROHM

BD8229EFV

4ch System Motor Driver IC
ROHM

BD8229EFV-E2

4ch System Motor Driver IC
ROHM

BD822EFV

Silicon Monolithic Integrated Circuit
ROHM

BD8231EFV

Silicon Monolithic Integrated Circuit
ROHM

BD825

NPN power transistors
NXP

BD825-10

TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 1.5A I(C) | TO-202
ETC

BD825-16

TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 1.5A I(C) | TO-202
ETC

BD825-6

TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 1.5A I(C) | TO-202
ETC