BD9107FVM-TL [ROHM]
暂无描述;型号: | BD9107FVM-TL |
厂家: | ROHM |
描述: | 暂无描述 转换器 稳压器 开关式稳压器或控制器 电源电路 开关式控制器 |
文件: | 总42页 (文件大小:1951K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Synchronous Buck Converter
Integrated FET
BD9106FVM BD9107FVM BD9109FVM BD9110NV BD9120HFN
●General Description
●Key Specifications
Input voltage range
BD9120HFN:
ROHM’s high efficiency step-down switching regulators
(BD9106FVM,BD9107FVM,BD9109FVM,BD9110NV,B
D9120HFN) are the power supply designed to produce
a low voltage including 1 volts from 5/3.3 volts power
supply line. Offers high efficiency with our original pulse
skip control technology and synchronous rectifier.
Employs a current mode control system to provide
faster transient response to sudden change in load.
2.7V to 4.5V
4.0V to 5.5V
4.5V to 5.5V
BD9106FVM,BD9107FVM:
BD9109FVM,BD9110NV:
Output voltage range
BD9109FVM:
3.30V ± 2%
1.0V to 1.5V
1.0V to 1.8V
1.0V to 2.5V
BD9120HFN:
BD9107FVM:
BD9106FVM,BD9110NV:
Output current
BD9106FVM, BD9109FVM,
BD9120HFN:
BD9107FVM:
BD9110NV:
Switching frequency:
FET ON resistance
●Features
Offers fast transient response with current mode
PWM control system.
0.8A(Max.)
1.2A(Max.)
2.0A(Max.)
1MHz(Typ.)
Offers highly efficiency for all load range with
synchronous rectifier (Nch/Pch FET)
and SLLMTM (Simple Light Load Mode)
Incorporates soft-start function.
Incorporates thermal protection and ULVO
functions.
Incorporates short-current protection circuit with
time delay function.
Incorporates shutdown function
Pch(Typ.) / Nch(Typ.)
BD9110NV:
200mΩ
350mΩ
350mΩ
/
/
/
150mΩ
250mΩ
250mΩ
BD9106FVM,BD9107FVM:
BD9120HFN,BD9109FVM:
Standby current:
0μA(Typ.)
Operating temperature range
●Application
BD9110NV:
BD9120HFN,BD9106FVM:
BD9107FVM,BD9109FVM:
-25℃ to +105℃
-25℃ to +85℃
-25℃ to +85℃
Power supply for LSI including DSP, Micro computer
and ASIC
●Packages
HSON8
(Typ.)
(Typ.)
(Max.)
2.90mm x 3.00mm x 0.60mm
2.90mm x 4.00mm x 0.90mm
5.00mm x 6.00mm x 1.00mm
MSOP8
SON008V5060
●Typical Application Circuit
Cin
L
VCC
VCC,PVCC
EN
SW
VOUT
VOUT
VOUT
ITH
ESR
RO
HSON8
GND,PGND
CO
RITH
CITH
SON008V5060
MSOP8
Fig.1 Typical Application Circuit
○Product structure:Silicon monolithic integrated circuit ○This product is not designed protection against radioactive rays.
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©2012 ROHM Co., Ltd. All rights reserved.
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Datasheet
BD9106FVM BD9107FVM BD9109FVM BD9110NV BD9120HFN
●Pin Configurations
(Top View)
(Top View)
ADJ
ITH
VCC
1
2
8
VOUT
ITH
VCC
PVCC
SW
1
2
8
PVCC
SW
7
6
7
6
EN
3
4
EN
3
4
GND
PGND
5
GND
PGND
5
Fig.3 BD9109FVM
(Top View)
Fig.2 BD9106FVM, BD9107FVM
(Top View)
1
2
3
ADJ
ITH
VCC
8
7
6
ADJ 1
8
EN
PVCC
VCC 2
ITH 3
7
6
PVCC
SW
EN
GND
SW
4
PGND
5
Fig.5 BD9120HFN
GND 4
5
PGND
Fig.4 BD9110NV
●Pin Descriptions
【BD9106FVM, BD9107FVM, BD9109FVM】
Pin No.
Pin name
ADJ/VOUT
ITH
PIN function
Output voltage detect pin/ ADJ for BD9106・07FVM
GmAmp output pin/Connected phase compensation capacitor
Enable pin(Active High)
1
2
3
EN
4
GND
Ground
5
6
7
8
PGND
SW
PVCC
VCC
Nch FET source pin
Pch/Nch FET drain output pin
Pch FET source pin
VCC power supply input pin
【BD9110NV】
Pin No.
Pin name
ADJ
PIN function
Output voltage adjust pin
1
2
3
4
5
6
7
8
VCC
ITH
VCC power supply input pin
GmAmp output pin/Connected phase compensation capacitor
Ground
Nch FET source pin
Pch/Nch FET drain output pin
Pch FET source pin
GND
PGND
SW
PVCC
EN
Enable pin(Active High)
【BD9120HFN】
Pin No.
Pin name
ADJ
PIN function
Output voltage adjust pin
GmAmp output pin/Connected phase compensation capacitor
Enable pin(Active High)
Ground
Nch FET source pin
Pch/Nch FET drain output pin
Pch FET source pin
VCC power supply input pin
1
2
3
4
5
6
7
8
ITH
EN
GND
PGND
SW
PVCC
VCC
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© 2012 ROHM Co., Ltd. All rights reserved.
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Datasheet
BD9106FVM BD9107FVM BD9109FVM BD9110NV BD9120HFN
●Ordering Information
x x
B D
9
1
x
x
x
x
-
Part Number
Package
Packaging and forming specification
E2: Embossed tape and reel
TR: Embossed tape and reel
NV:SON008V5060
HFN:HSON8
FVM:MSOP8
●Lineup
UVLO
Output
Current
(Max.)
Operating
Temperature
Range
Output
voltage
range
Threshold
Package
voltage
(Typ.)
Input voltage
range
Orderable
Part Number
Adjustable
(1.0 to 2.5V)
Adjustable
0.8A
3.4V
MSOP8 Reel of 3000 BD9106FVM-TR
4.0V to 5.5V
1.2A
0.8A
0.8A
2.7V
3.8V
2.5V
MSOP8 Reel of 3000 BD9107FVM-TR
MSOP8 Reel of 3000 BD9109FVM-TR
HSON8 Reel of 3000 BD9120HFN-TR
-25℃ to +85℃
(1.0 to 1.8V)
4.5V to 5.5V
2.7V to 4.5V
3.30±2%
Adjustable
(1.0 to 1.5V)
Adjustable
SON00
-25℃ to +105℃
4.5V to 5.5V
2.0A
3.7V
Reel of 2000 BD9110NV-E2
8V5060
(1.0 to 2.5V)
●Absolute Maximum Ratings (Ta=25℃)
Parameter Symbol
VCC voltage
PVCC voltage
EN voltage
Limits
Unit
BD910xFVM
-0.3 to +7 *1
-0.3 to +7 *1
-0.3 to +7
-0.3 to +7
387.5*2
BD9110NV
BD9120HFN
-0.3 to +7 *1
-0.3 to +7 *1
-0.3 to +7
-0.3 to +7
1350*6
VCC
PVCC
EN
-0.3 to +7 *1
-0.3 to +7 *1
-0.3 to +7
-0.3 to +7
900*4
V
V
V
SW,ITH voltage
SW,ITH
Pd1
Pd2
Topr
Tstg
V
Power dissipation 1
Power dissipation 2
Operating temperature range
Storage temperature range
mW
mW
℃
587.4*3
3900*5
1750*7
-25 to +85
-55 to +150
-25 to +105
-55 to +150
-25 to +85
-55 to +150
℃
℃
Maximum junction temperature
Tjmax
+150
+150
+150
*1 Pd should not be exceeded.
*2 Derating in done 3.1mW/℃ for temperatures above Ta=25℃.
*3 Derating in done 4.7mW/℃ for temperatures above Ta=25℃, Mounted on 70mm×70mm×1.6mm Glass Epoxy PCB.
*4 Derating in done 7.2mW/℃ for temperatures above Ta=25℃, Mounted on 70mm×70mm×1.6mm Glass Epoxy PCB
which has 1 layer (3%) of copper on the back side).
*5 Derating in done 31.2mW/℃ for temperatures above Ta=25℃, Mounted on a board according to JESD51-7.
*6 Derating in done 10.8mW/℃ for temperatures above Ta=25℃, Mounted on 70mm×70mm×1.6mm Glass Epoxy PCB
which has 1 layer (7%) of copper on the back side).
*7 Derating in done 14mW/℃ for temperatures above Ta=25℃, Mounted on 70mm×70mm×1.6mm Glass Epoxy PCB
which has 1 layer (6.5%) of copper on the back side).
●Recommended Operating Ratings (Ta=25℃)
BD9106FVM BD9107FVM BD9109FVM
BD9110NV
BD9120HFN
Parameter
Symbol
Unit
Min. Max. Min. Max. Min. Max. Min. Max. Min. Max.
*8
VCC voltage
VCC
4.0
4.0
0
5.5
5.5
4.0
4.0
0
5.5
5.5
4.5
4.5
0
5.5
5.5
4.5
4.5
0
5.5
5.5
2.7
2.7
0
4.5
4.5
V
V
V
A
*8
PVCC voltage
EN voltage
PVCC
EN
VCC
0.8
VCC
1.2
VCC
0.8
VCC
2.0
VCC
0.8
SW average output current
Isw *8
-
-
-
-
-
*8 Pd should not be exceeded.
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Datasheet
BD9106FVM BD9107FVM BD9109FVM BD9110NV BD9120HFN
●Electrical Characteristics
◎BD9106FVM (Ta=25℃, VCC=5V, EN=VCC, R1=20kΩ, R2=10kΩ unless otherwise specified.)
Parameter
Standby current
Bias current
EN Low voltage
EN High voltage
Symbol
ISTB
ICC
VENL
VENH
IEN
FOSC
RONP
RONN
VADJ
VOUT
ITHSI
ITHSO
VUVLOTh
VUVLOHys
TSS
Min.
-
-
Typ.
0
250
GND
VCC
1
Max.
10
400
0.8
-
Unit
μA
μA
V
Conditions
EN=GND
-
Standby mode
Active mode
VEN=5V
2.0
-
0.8
-
V
EN input current
10
μA
MHz
Ω
Ω
V
Oscillation frequency
Pch FET ON resistance *9
Nch FET ON resistance *9
ADJ Voltage
Output voltage
ITH SInk current
ITH Source Current
UVLO threshold voltage
UVLO hysteresis voltage
Soft start time
1
1.2
0.60
0.50
0.820
-
0.35
0.25
0.800
1.200
20
PVCC=5V
PVCC=5V
-
0.780
-
*9
V
10
10
3.2
50
1.5
0.5
-
-
μA
μA
V
mV
ms
ms
ADJ=H
ADJ=L
VCC=H→L
20
3.4
100
3
3.6
200
6
Timer latch time
TLATCH
1
2
*9 Outgoing inspection is not done on all products
◎BD9107FVM (Ta=25℃, VCC=5V, EN=VCC, R1=20kΩ, R2=10kΩ unless otherwise specified.)
Parameter
Standby current
Bias current
EN Low voltage
EN High voltage
Symbol
ISTB
ICC
VENL
VENH
IEN
FOSC
RONP
RONN
VADJ
VOUT
ITHSI
ITHSO
VUVLOTh
VUVLOHys
TSS
Min.
-
-
Typ.
0
250
GND
VCC
1
Max.
10
400
0.8
-
Unit
μA
μA
V
Conditions
EN=GND
-
Standby mode
Active mode
VEN=5V
2.0
-
0.8
-
V
EN input current
10
μA
MHz
Ω
Ω
V
Oscillation frequency
Pch FET ON resistance *9
Nch FET ON resistance *9
ADJ Voltage
Output voltage
ITH SInk current
ITH Source Current
UVLO threshold voltage
UVLO hysteresis voltage
Soft start time
1
1.2
0.60
0.50
0.820
-
0.35
0.25
0.800
1.200
20
PVCC=5V
PVCC=5V
-
0.780
-
*9
V
10
10
2.6
150
0.5
0.5
-
-
μA
μA
V
mV
ms
ms
VOUT =H
VOUT =L
VCC=H→L
20
2.7
300
1
2.8
600
2
Timer latch time
TLATCH
1
2
*9 Outgoing inspection is not done on all products
◎BD9109FVM (Ta=25℃, VCC=PVCC=5V, EN= VCC unless otherwise specified.)
Parameter
Standby current
Bias current
EN Low voltage
EN High voltage
Symbol
ISTB
ICC
Min.
-
-
Typ.
0
250
GND
VCC
1
Max.
10
400
0.8
-
Unit
μA
μA
V
Conditions
EN=GND
VENL
VENH
IEN
FOSC
RONP
RONN
VOUT
ITHSI
ITHSO
VUVLO1
VUVLO2
TSS
TLATCH
-
Standby mode
Active mode
VEN=5V
2.0
-
0.8
-
V
EN input current
10
μA
MHz
Ω
Ω
V
μA
μA
V
V
ms
ms
Oscillation frequency
Pch FET ON resistance *9
Nch FET ON resistance *9
Output voltage
ITH SInk current
ITH Source Current
UVLO threshold voltage
UVLO hysteresis voltage
Soft start time
1
1.2
0.60
0.50
3.366
-
0.35
0.25
3.300
20
PVCC=5V
PVCC=5V
-
3.234
10
10
3.6
3.65
0.5
1
VOUT =H
VOUT =L
VCC=H→L
20
-
3.8
3.9
1
4.0
4.2
2
VCC=L→H
Timer latch time
2
3
SCP/TSD operated
Output Short circuit
Threshold Voltage
VSCP
-
2
2.7
V
VOUT =H→L
*9 Outgoing inspection is not done on all products
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Datasheet
BD9106FVM BD9107FVM BD9109FVM BD9110NV BD9120HFN
◎BD9110NV (Ta=25℃, VCC=PVCC=5V, EN=VCC, R1=10kΩ,R2=5kΩ unless otherwise specified.)
Parameter
Standby current
Bias current
EN Low voltage
EN High voltage
Symbol
ISTB
ICC
VENL
VENH
IEN
FOSC
RONP
RONN
VADJ
VOUT
ITHSI
ITHSO
VUVLOTh
VUVLOHys
TSS
Min.
-
-
Typ.
0
250
GND
VCC
1
Max.
10
350
0.8
-
Unit
μA
μA
V
Conditions
EN=GND
-
Standby mode
Active mode
VEN=5V
2.0
-
0.8
-
V
EN input current
10
μA
MHz
mΩ
mΩ
V
Oscillation frequency
Pch FET ON resistance *9
Nch FET ON resistance *9
ADJ Voltage
Output voltage
ITH SInk current
ITH Source Current
UVLO threshold voltage
UVLO hysteresis voltage
Soft start time
1
1.2
320
270
0.820
-
200
150
0.800
1.200
20
PVCC=5V
PVCC=5V
-
0.780
-
*9
V
10
10
3.5
50
2.5
0.5
-
-
μA
μA
V
mV
ms
ms
VOUT =H
VOUT =L
VCC=H→L
20
3.7
100
5
3.9
200
10
Timer latch time
TLATCH
1
2
*9 Outgoing inspection is not done on all products
◎BD9120HFN (Ta=25℃, VCC=PVCC=3.3V, EN=VCC, R1=20kΩ, R2=10kΩ unless otherwise specified.)
Parameter
Standby current
Bias current
EN Low voltage
EN High voltage
Symbol
ISTB
ICC
Min.
-
-
-
2.0
-
0.8
-
Typ.
0
200
GND
VCC
1
Max.
10
400
0.8
-
Unit
μA
μA
V
Conditions
EN=GND
VENL
VENH
IEN
FOSC
RONP
RONN
VADJ
VOUT
ITHSI
ITHSO
VUVLO1
VUVLO2
TSS
Standby mode
Active mode
VEN=3.3V
V
EN input current
10
μA
MHz
Ω
Ω
V
Oscillation frequency
Pch FET ON resistance *9
Nch FET ON resistance *9
ADJ Voltage
Output voltage
ITH SInk current
ITH Source Current
UVLO threshold voltage
UVLO hysteresis voltage
Soft start time
1
1.2
0.60
0.50
0.820
-
0.35
0.25
0.800
1.200
20
PVCC=3.3V
PVCC=3.3V
-
0.780
-
10
*9
V
-
-
μA
μA
V
V
ms
ms
VOUT =H
VOUT =L
VCC=H→L
VCC=L→H
10
20
2.400
2.425
0.5
1
2.500
2.550
1
2.600
2.700
2
Timer latch time
TLATCH
2
3
SCP/TSD operated
Output Short circuit
Threshold Voltage
VSCP
-
VOUT×0.5
VOUT×0.7
V
VOUT =H→L
*9 Outgoing inspection is not done on all products
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Datasheet
BD9106FVM BD9107FVM BD9109FVM BD9110NV BD9120HFN
●Block Diagram
【BD9106FVM, BD9107FVM】
Fig.6 BD9106FVM, BD9107FVM Block Diagram
【BD9109FVM】
Fig.7 BD9109FVM Block Diagram
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Datasheet
BD9106FVM BD9107FVM BD9109FVM BD9110NV BD9120HFN
【BD9110NV】
Fig.8 BD9110NV Block Diagram
【BD9120HFN】
Fig.9 BD9120HFN Block Diagram
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Datasheet
BD9106FVM BD9107FVM BD9109FVM BD9110NV BD9120HFN
●Typical Performance Curves
【BD9106FVM】
Fig.10 Vcc-Vout
Fig.11 Ven-Vout
Fig.13 Ta-Vout
Fig.12 Iout-Vout
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Datasheet
BD9106FVM BD9107FVM BD9109FVM BD9110NV BD9120HFN
Fig.15 Ta-Fosc
Fig.14 Efficiency
Fig.16 Ta-Ronn, Ronp
Fig.17 Ta-Ven
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Datasheet
BD9106FVM BD9107FVM BD9109FVM BD9110NV BD9120HFN
Fig.19 Vcc-Fosc
Fig.18 Ta-Icc
Fig.21 SW waveform Io=10mA
Fig.20 Soft start waveform
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Datasheet
BD9106FVM BD9107FVM BD9109FVM BD9110NV BD9120HFN
Fig. 23 Transient response
Io=100→600mA(10μs)
Fig.22 SW waveform Io=200mA
Fig.24 Transient response
Io=600→100mA(10μs)
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Datasheet
BD9106FVM BD9107FVM BD9109FVM BD9110NV BD9120HFN
【BD9107FVM】
Fig.25 Vcc-Vout
Fig.26 Ven-Vout
Fig.27 Iout-Vout
Fig.28 Ta-Vout
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Datasheet
BD9106FVM BD9107FVM BD9109FVM BD9110NV BD9120HFN
Fig.30 Ta-Fosc
Fig.29 Efficiency
Fig.32 Ta-VEN
Fig.31 Ta-RONN, RONP
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Datasheet
BD9106FVM BD9107FVM BD9109FVM BD9110NV BD9120HFN
Fig.33 Ta-ICC
Fig.34 Vcc-Fosc
Fig.36 SW waveform Io=10mA
Fig.35 Soft start waveform
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Datasheet
BD9106FVM BD9107FVM BD9109FVM BD9110NV BD9120HFN
Fig. 38 Transient response
Io=100→600mA(10μs)
Fig.37 SW waveform Io=500mA
Fig.39 Transient response
Io=600→100mA(10μs)
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Datasheet
BD9106FVM BD9107FVM BD9109FVM BD9110NV BD9120HFN
【BD9109FVM】
Fig.40 Vcc-Vout
Fig.41 Ven-Vout
Fig. 43 Ta-Vout
Fig.42 Iout-Vout
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Datasheet
BD9106FVM BD9107FVM BD9109FVM BD9110NV BD9120HFN
Fig.45 Ta-Fosc
Fig.44 Efficiency
Fig.46 Ta-Ronn, Ronp
Fig.47 Ta-Ven
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BD9106FVM BD9107FVM BD9109FVM BD9110NV BD9120HFN
Fig.48 Ta-Icc
Fig.49 Vcc-Fosc
Fig.50 Soft start waveform
Fig.51 SW waveform Io=10mA
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BD9106FVM BD9107FVM BD9109FVM BD9110NV BD9120HFN
Fig. 53 Transient response
Io=100→600mA(10μs)
Fig.52 SW waveform Io=500mA
Fig.54 Transient response
Io=600→100mA(10μs)
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BD9106FVM BD9107FVM BD9109FVM BD9110NV BD9120HFN
【BD9110NV】
Fig.55 Vcc-Vout
Fig.56 Ven-Vout
Fig.57 Iout-Vout
Fig. 58 Ta-Vout
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BD9106FVM BD9107FVM BD9109FVM BD9110NV BD9120HFN
Fig.60 Ta-Fosc
Fig.59 Efficiency
Fig.62 Ta-Ven
Fig.61 Ta-Ronn, Ronp
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BD9106FVM BD9107FVM BD9109FVM BD9110NV BD9120HFN
Fig.64 Vcc-Fosc
Fig.63 Ta-Icc
Fig.65 Soft start waveform
Fig.66 SW waveform Io=10mA
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BD9106FVM BD9107FVM BD9109FVM BD9110NV BD9120HFN
Fig.67 SW waveform Io=500mA
Fig. 68 Transient response
Io=100→600mA(10μs)
Fig.69 Transient response
Io=600→100mA(10μs)
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BD9106FVM BD9107FVM BD9109FVM BD9110NV BD9120HFN
【BD9120HFN】
Fig.70 Vcc-Vout
Fig.71 Ven-Vout
Fig.72 Iout-Vout
Fig. 73 Ta-Vout
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BD9106FVM BD9107FVM BD9109FVM BD9110NV BD9120HFN
Fig.75 Ta-Fosc
Fig.74 Efficiency
Fig.76 Ta-Ronn, Ronp
Fig.77 Ta-Ven
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BD9106FVM BD9107FVM BD9109FVM BD9110NV BD9120HFN
Fig.78 Ta-Icc
Fig.79 Vcc-Fosc
Fig.81 SW waveform Io=10mA
Fig.80 Soft start waveform
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BD9106FVM BD9107FVM BD9109FVM BD9110NV BD9120HFN
Fig. 83 Transient response
Io=100→600mA(10μs)
Fig.82 SW waveform Io=200mA
Fig.84 Transient response
Io=600→100mA(10µs)
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Datasheet
BD9106FVM BD9107FVM BD9109FVM BD9110NV BD9120HFN
Application Information
●Operation
BD9106FVM,BD9107FVM,BD9109FVM,BD9110NV,BD9120HFN are
a synchronous rectifying step-down switching
regulator that achieves faster transient response by employing current mode PWM control system. It utilizes
switching operation in PWM (Pulse Width Modulation) mode for heavier load, while it utilizes SLLMTM (Simple Light
Load Mode) operation for lighter load to improve efficiency.
○Synchronous rectifier
It does not require the power to be dissipated by a rectifier externally connected to a conventional DC/DC converter IC,
and its P.N junction shoot-through protection circuit limits the shoot-through current during operation, by which the power
dissipation of the set is reduced.
○Current mode PWM control
Synthesizes a PWM control signal with a inductor current feedback loop added to the voltage feedback.
・PWM (Pulse Width Modulation) control
The oscillation frequency for PWM is 1 MHz. SET signal form OSC turns ON a P-channel MOS FET (while a
N-channel MOS FET is turned OFF), and an inductor current IL increases. The current comparator (Current Comp)
receives two signals, a current feedback control signal (SENSE: Voltage converted from IL) and a voltage feedback
control signal (FB), and issues a RESET signal if both input signals are identical to each other, and turns OFF the
P-channel MOS FET (while a N-channel MOS FET is turned ON) for the rest of the fixed period. The PWM control
repeat this operation.
・SLLMTM (Simple Light Load Mode) control
When the control mode is shifted from PWM for heavier load to the one for lighter load or vise versa, the switching
pulse is designed to turn OFF with the device held operated in normal PWM control loop, which allows linear operation
without voltage drop or deterioration in transient response during the mode switching from light load to heavy load or
vise versa.
Although the PWM control loop continues to operate with a SET signal from OSC and a RESET signal from Current
Comp, it is so designed that the RESET signal is held issued if shifted to the light load mode, with which the switching
is tuned OFF and the switching pulses are thinned out under control. Activating the switching intermittently reduces
the switching dissipation and improves the efficiency.
SENSE
Current
Comp
VOUT
RESET
Level FB
Shift
R
S
Q
IL
SET
Driver
Logic
VOUT
Gm Amp.
SW
Load
OSC
ITH
Fig.85 Diagram of current mode PWM control
PVCC
SENSE
PVCC
Current
Comp
Current
SENSE
Comp
FB
FB
SET
SET
GND
GND
GND
GND
RESET
SW
RESET
GND
SW
GND
IL
IL(AVE)
IL
0A
VOUT
VOUT
VOUT(AVE)
VOUT(AVE)
Not switching
Fig.86 PWM switching timing chart
Fig.87 SLLM switching timing chart
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Datasheet
BD9106FVM BD9107FVM BD9109FVM BD9110NV BD9120HFN
●Description of Operations
・Soft-start function
EN terminal shifted to “High” activates a soft-starter to gradually establish the output voltage with the current limited
during startup, by which it is possible to prevent an overshoot of output voltage and an inrush current.
・Shutdown function
With EN terminal shifted to “Low”, the device turns to Standby Mode, and all the function blocks including reference
voltage circuit, internal oscillator and drivers are turned to OFF. Circuit current during standby is 0 μA (Typ.).
・UVLO function
Detects whether the input voltage sufficient to secure the output voltage of this IC is supplied. And the hysteresis width of
50 to 300 mV (Typ.) is provided to prevent output chattering.
Hysteresis 50 to 300mV
VCC
EN
VOUT
Tss
Tss
Tss
Soft start
Standby
mode
Standby
mode
Standby mode
Operating mode
Operating mode
Operating mode
Standby mode
UVLO
EN
UVLO
UVLO
*Soft Start time(typ.)
Fig.88 Soft start, Shutdown, UVLO timing chart
BD9106FVM BD9107FVM BD9109FVM
BD9110NV
5
BD9120HFN
1
Unit
msec
Tss
3
1
1
・Short-current protection circuit with time delay function
Turns OFF the output to protect the IC from breakdown when the incorporated current limiter is activated continuously for the
fixed time(TLATCH) or more. The output thus held tuned OFF may be recovered by restarting EN or by re-unlocking UVLO.
EN
Output OFF
latch
VOUT
Limit
IL
1msec
Standby
mode
Standby
mode
Operating mode
Operating mode
EN
Timer latch
EN
*Timer Latch time (typ.)
Fig.89 Short-current protection circuit with time delay timing chart
BD9106FVM
1
BD9107FVM
1
BD9109FVM
2
BD9110NV
1
BD9120HFN
2
Unit
msec
TLATCH
※
In addition to current limit circuit, output short detect circuit is built in on BD9109FVM and BD9120HFN. If output voltage fall below
2V(typ, BD9109FVM) or Vout×0.5(typ,BD9120HFN), output voltage will hold turned OFF.
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BD9106FVM BD9107FVM BD9109FVM BD9110NV BD9120HFN
●Information on Advantages
Advantage 1:Offers fast transient response with current mode control system.
Conventional product (VOUT of which is 3.3 volts)
BD9109FVM (Load response IO=100mA→600mA)
VOUT
VOUT
228mV
IOUT
IOUT
Voltage drop due to sudden change in load was reduced by about 40%.
Fig.90 Comparison of transient response
Advantage 2: Offers high efficiency for all load range.
・For lighter load:
Utilizes the current mode control mode called SLLMTM for lighter load, which reduces various dissipation such as
switching dissipation (PSW), gate charge/discharge dissipation, ESR dissipation of output capacitor (PESR) and
on-resistance dissipation (PRON) that may otherwise cause degradation in efficiency for lighter load.
Achieves efficiency improvement for lighter load.
・For heavier load:
100
SLLMTM
②
50
0
Utilizes the synchronous rectifying mode and the low on-resistance
MOS FETs incorporated as power transistor.
①
PWM
①inprovement by SLLM system
②improvement by synchronous rectifier
ON resistance of P-channel MOS FET: 0.2 to 0.35 Ω (Typ.)
ON resistance of N-channel MOS FET: 0.15 to 0.25 Ω (Typ.)
0.001
0.01
0.1
1
Output current Io[A]
Fig.91 Efficiency
Achieves efficiency improvement for heavier load.
Offers high efficiency for all load range with the improvements mentioned above.
Advantage 3:・Supplied in smaller package due to small-sized power MOS FET incorporated.
(3 package like MOSP8, HSON8, SON008V5060)
・Allows reduction in size of application products
・Output capacitor Co required for current mode control: 10 μF ceramic capacitor
・Inductance L required for the operating frequency of 1 MHz: 4.7 μH inductor
(BD9110NV:Co=22µF, L=2.2µH)
Reduces a mounting area required.
VCC
15mm
CIN
Cin
RITH
CITH
L
DC/DC
Convertor
Controller
L
VOUT
10mm
RITH
CITH
Co
CO
Fig.92 Example application
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BD9106FVM BD9107FVM BD9109FVM BD9110NV BD9120HFN
●Switching Regulator Efficency
Efficiency ŋ may be expressed by the equation shown below:
VOUT×IOUT
Vin×Iin
POUT
POUT
η=
×100[%]=
×100[%]=
×100[%]
Pin
POUT+PDα
Efficiency may be improved by reducing the switching regulator power dissipation factors PDα as follows:
Dissipation factors:
1) ON resistance dissipation of inductor and FET:PD(I2R)
2) Gate charge/discharge dissipation:PD(Gate)
3) Switching dissipation:PD(SW)
4) ESR dissipation of capacitor:PD(ESR)
5) Operating current dissipation of IC:PD(IC)
2
1)PD(I2R)=IOUT ×(RCOIL+RON) (RCOIL[Ω]:DC resistance of inductor, RON[Ω]:ON resistance of FETIOUT[A]:Output current.)
2)PD(Gate)=Cgs×f×V2 (Cgs[F]:Gate capacitance of FET,f[H]:Switching frequency,V[V]:Gate driving voltage of FET)
Vin2×CRSS×IOUT×f
3)PD(SW)=
(CRSS[F]:Reverse transfer capacitance of FET、IDRIVE[A]:Peak current of gate.)
IDRIVE
2
4)PD(ESR)=IRMS ×ESR (IRMS[A]:Ripple current of capacitor,ESR[Ω]:Equivalent series resistance.)
5)PD(IC)=Vin×ICC (ICC[A]:Circuit current.)
●Consideration on Permissible Dissipation and Heat Generation
As this IC functions with high efficiency without significant heat generation in most applications, no special consideration is
needed on permissible dissipation or heat generation. In case of extreme conditions, however, including lower input
voltage, higher output voltage, heavier load, and/or higher temperature, the permissible dissipation and/or heat generation
must be carefully considered.
For dissipation, only conduction losses due to DC resistance of inductor and ON resistance of FET are considered.
Because the conduction losses are considered to play the leading role among other dissipation mentioned above including
gate charge/discharge dissipation and switching dissipation.
1.5
1000
800
1.5
①mounted on glass epoxy PCB
θj-a=212.8℃/W
②Using an IC alone
θj-a=322.6℃/W
① mounted on glass epoxy PCB
θj-a=133.0℃/W
② Using an IC alone
θj-a=195.3℃/W
① for SON008V5060
ROHM standard 1layer board
θj-a=138.9℃/W
② Using an IC alone
θj-a=195.3℃/W
①1.15W
②0.63W
①0.90W
②0.64W
1.0
1.0
①587.4mW
②387.5mW
600
400
200
0
0.5
0
0.5
0
0
25
50
75 85 100
125
150
0
25
50
75 85 100
125
150
0
25
50
75
100105 125
150
Ambient temperature:Ta [℃]
Fig.93 Thermal derating curve
(MSOP8)
Ambient temperature:Ta [℃]
Ambient temperature:Ta [℃]
Fig.94 Thermal derating curve
(HSON8)
Fig.95 Thermal derating curve
(SON008V5060)
2
P=IOUT ×(RCOIL+RON)
If VCC=5V, VOUT=3.3V, RCOIL=0.15Ω, RONP=0.35Ω, RONN=0.25Ω
IOUT=0.8A, for example,
RON=D×RONP+(1-D)×RONN
D=VOUT/VCC=3.3/5=0.66
RON=0.66×0.35+(1-0.66)×0.25
=0.231+0.085
D:ON duty (=VOUT/VCC)
RCOIL:DC resistance of coil
RONP:ON resistance of P-channel MOS FET
RONN:ON resistance of N-channel MOS FET
IOUT:Output current
=0.316[Ω]
P=0.82×(0.15+0.316)
≒298[mV]
As RONP is greater than RONN in this IC, the dissipation increases as the ON duty becomes greater. With the
consideration on the dissipation as above, thermal design must be carried out with sufficient margin allowed.
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BD9106FVM BD9107FVM BD9109FVM BD9110NV BD9120HFN
●Selection of Components Externally Connected
1. Selection of inductor (L)
The inductance significantly depends on output ripple current.
As seen in the equation (1), the ripple current decreases as the
inductor and/or switching frequency increases.
IL
ΔIL
(VCC-VOUT)×VOUT
VCC
ΔIL=
[A]・・・(1)
L×VCC×f
Appropriate ripple current at output should be 30% more or less of
the maximum output current.
IL
VOUT
ΔIL=0.3×IOUTmax. [A]・・・(2)
L
(VCC-VOUT)×VOUT
Co
L=
[H]・・・(3)
ΔIL×VCC×f
(ΔIL: Output ripple current, and f: Switching frequency)
Fig.96 Output ripple current
* Current exceeding the current rating of the inductor results in magnetic saturation of the inductor, which decreases efficiency.
The inductor must be selected allowing sufficient margin with which the peak current may not exceed its current rating.
If VCC=5V, VOUT=3.3V, f=1MHz, ΔIL=0.3×0.8A=0.24A, for example,(BD9109FVM)
(5-3.3)×3.3
L=
=4.675μ → 4.7[μH]
0.24×5×1M
* Select the inductor of low resistance component (such as DCR and ACR) to minimize dissipation in the inductor for
better efficiency.
2. Selection of output capacitor (CO)
VCC
Output capacitor should be selected with the consideration on the stability
region and the equivalent series resistance required to smooth ripple voltage.
Output ripple voltage is determined by the equation (4):
VOUT
ΔVOUT=ΔIL×ESR [V]・・・(4)
L
ESR
Co
(ΔIL: Output ripple current, ESR: Equivalent series resistance of output capacitor)
*Rating of the capacitor should be determined allowing sufficient margin
against output voltage. Less ESR allows reduction in output ripple voltage.
Fig.97 Output capacitor
As the output rise time must be designed to fall within the soft-start time, the capacitance of output capacitor should be
determined with consideration on the requirements of equation (5):
TSS×(Ilimit-IOUT)
Tss: Soft-start time
Ilimit: Over current detection level, 2A(Typ)
Co≦
・・・(5)
VOUT
In case of BD9109FVM, for instance, and if VOUT=3.3V, IOUT=0.8A, and TSS=1ms,
1m×(2-0.8)
Co≦
≒364 [μF]
3.3
Inappropriate capacitance may cause problem in startup. A 10 μF to 100 μF ceramic capacitor is recommended.
3. Selection of input capacitor (Cin)
Input capacitor to select must be a low ESR capacitor of the capacitance
sufficient to cope with high ripple current to prevent high transient voltage. The
ripple current IRMS is given by the equation (6):
√
VCC
Cin
VOUT(VCC-VOUT)
IRMS=IOUT×
[A]・・・(6)
VOUT
VCC
L
Co
< Worst case > IRMS(max.)
IOUT
When VCC is twice the Vout,
IRMS=
2
If VCC=5V, VOUT=3.3V, and IOUTmax.=0.8A, (BD9109FVM)
√
Fig.98 Input capacitor
3.3(5-3.3)
IRMS=0.8×
=0.38[ARMS]
5
A low ESR 10μF/10V ceramic capacitor is recommended to reduce ESR dissipation of input capacitor for better efficiency.
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BD9106FVM BD9107FVM BD9109FVM BD9110NV BD9120HFN
4. Determination of RITH, CITH that works as a phase compensator
As the Current Mode Control is designed to limit a inductor current, a pole (phase lag) appears in the low frequency area
due to a CR filter consisting of a output capacitor and a load resistance, while a zero (phase lead) appears in the high
frequency area due to the output capacitor and its ESR. So, the phases are easily compensated by adding a zero to the
power amplifier output with C and R as described below to cancel a pole at the power amplifier.
fp(Min.)
A
1
fp=
fp(Max.)
2π×RO×CO
Gain
[dB]
0
1
fz(ESR)
fz(ESR)=
2π×ESR×CO
IOUTMin.
IOUTMax.
Pole at power amplifier
0
When the output current decreases, the load resistance Ro
increases and the pole frequency lowers.
Phase
[deg]
-90
1
fp(Min.)=
[Hz]←with lighter load
[Hz]←with heavier load
2π×ROMax.×CO
Fig.99 Open loop gain characteristics
1
fp(Max.)=
A
2π×ROMin.×CO
fz(Amp.)
Gain
[dB]
Zero at power amplifier
Increasing capacitance of the output capacitor lowers the
pole frequency while the zero frequency does not change.
(This is because when the capacitance is doubled, the
capacitor ESR reduces to half.)
0
0
Phase
[deg]
1
fz(Amp.)=
-90
2π×RITH.×CITH
Fig.100 Error amp phase compensation characteristics
Cin
L
VCC
VCC,PVCC
EN
SW
VOUT
RO
VOUT
VOUT
ITH
ESR
CO
GND,PGND
RITH
CITH
Fig.101 Typical application
Stable feedback loop may be achieved by canceling the pole fp (Min.) produced by the output capacitor and the load
resistance with CR zero correction by the error amplifier.
fz(Amp.)= fp(Min.)
1
1
=
2π×RITH×CITH
2π×ROMax.×CO
5. Determination of output voltage
The output voltage VOUT is determined by the equation (7):
L
VOUT=(R2/R1+1)×VADJ・・・(7) VADJ: Voltage at ADJ terminal (0.8V Typ.)
With R1 and R2 adjusted, the output voltage may be determined as required.
Adjustable output voltage range: 1.0V to 1.5V/ BD9107FVM, BD9120HFN
1.0V to 2.5V/BD106FVM, BD9110NV
Output
SW
Co
R2
R1
Use 1 kΩ to 100 kΩ resistor for R1. If a resistor of the resistance higher than
100 kΩ is used, check the assembled set carefully for ripple voltage etc.
ADJ
Fig.102 Determination of output voltage
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Datasheet
BD9106FVM BD9107FVM BD9109FVM BD9110NV BD9120HFN
●Cautions on PC Board layout
BD9106FVM, BD9107FVM, BD9109FVM, BD9120HFN
VOUT/ADJ
ITH
VCC
PVCC
SW
1
2
3
4
8
7
6
5
VCC
RITH
CIN
①
L
EN
EN
VOUT
CITH
CO
GND
PGND
GND
②
③
Fig.103 Layout diagram
BD9110NV Cautions on PC Board layout
R2
VCC
EN
1
2
8
7
EN
ADJ
R1
VCC
ITH
PVCC
SW
L
①
3
4
6
5
VOUT
RITH
③
CIN
Co
GND
PGND
②
CITH
GND
Fig.104 Layout diagram
For the sections drawn with heavy line, use thick conductor pattern as short as possible.
①
②
Lay out the input ceramic capacitor CIN closer to the pins PVCC and PGND, and the output capacitor Co closer to
the pin PGND.
③
Lay out CITH and RITH between the pins ITH and GND as neat as possible with least necessary wiring.
※
The package of HSON8 (BD9120HFN) and SON008V5050 (BD9110NV) has thermal FIN on the reverse of the package.
The package thermal performance may be enhanced by bonding the FIN to GND plane which take a large area of PCB.
●Recommended components Lists on above application
Table1. [BD9106FVM]
Symbol
Part
Value
Manufacturer
Sumida
TDK
Series
CMD6D11B
L
Coil
4.7μH
VLF5014AT-4R7M1R1
CM316X5R106K10A
CM316X5R106K10A
GRM18series
Ceramic capacitor
Ceramic capacitor
Ceramic capacitor
CIN
CO
10μF
10μF
Kyocera
Kyocera
murata
ROHM
CITH
750pF
VOUT=1.0V
18kΩ
22kΩ
22kΩ
27kΩ
36kΩ
MCR10 1802
VOUT=1.2V
VOUT=1.5V
VOUT=1.8V
VOUT=2.5V
ROHM
MCR10 2202
RITH
Resistance
ROHM
MCR10 2202
ROHM
MCR10 2702
ROHM
MCR10 3602
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Datasheet
BD9106FVM BD9107FVM BD9109FVM BD9110NV BD9120HFN
Table2. [BD9107FVM]
Symbol
Part
Value
Manufacturer
Sumida
TDK
Series
CMD6D11B
L
Coil
4.7μH
VLF5014AT-4R7M1R1
CM316X5R106K10A
CM316X5R106K10A
GRM18series
Ceramic capacitor
Ceramic capacitor
Ceramic capacitor
CIN
CO
10μF
10μF
Kyocera
Kyocera
murata
ROHM
CITH
1000pF
VOUT=1.0V
4.3kΩ
6.8kΩ
9.1kΩ
12kΩ
MCR10 4301
VOUT=1.2V
VOUT=1.5V
VOUT=1.8V
ROHM
MCR10 6801
RITH
Resistance
ROHM
MCR10 9101
ROHM
MCR10 1202
Table3. [BD9109VM]
Symbol
Part
Value
Manufacturer
Sumida
TDK
Series
CMD6D11B
L
Coil
4.7μH
VLF5014AT-4R7M1R1
CM316X5R106K10A
CM316X5R106K10A
GRM18series
Ceramic capacitor
Ceramic capacitor
Ceramic capacitor
CIN
CO
10μF
10μF
330pF
30kΩ
Kyocera
Kyocera
murata
CITH
RITH
Resistance
ROHM
MCR10 3002
Table4. [BD9110NV]
Symbol
Part
Coil
Value
2.2μH
10μF
Manufacturer
TDK
Series
L
LTF5022T-2R2N3R2
CM316X5R106K10A
CM316B226K06A
GRM18series
CIN
CO
Ceramic capacitor
Ceramic capacitor
Ceramic capacitor
Kyocera
Kyocera
murata
22μF
CITH
1000pF
VOUT=1.0V
VOUT=1.2V
VOUT=1.5V
VOUT=1.8V
VOUT=2.5V
RITH
Resistance
12kΩ
ROHM
MCR10 1202
Table5. [BD9120HFN]
Symbol
Part
Coil
Value
Manufacturer
Sumida
TDK
Series
CMD6D11B
L
4.7μH
VLF5014AT-4R7M1R1
CM316X5R106K10A
CM316X5R106K10A
GRM18series
CIN
CO
Ceramic capacitor
Ceramic capacitor
Ceramic capacitor
10μF
10μF
Kyocera
Kyocera
murata
CITH
680pF
VOUT=1.0V
8.2kΩ
8.2kΩ
4.7kΩ
ROHM
MCR10 8201
RITH
Resistance
VOUT=1.2V
ROHM
MCR10 8201
VOUT=1.5V
ROHM
MCR10 4701
*The parts list presented above is an example of recommended parts. Although the parts are sound, actual circuit characteristics should be checked on
your application carefully before use. Be sure to allow sufficient margins to accommodate variations between external devices and this IC when employing
the depicted circuit with other circuit constants modified. Both static and transient characteristics should be considered in establishing these margins. When
switching noise is substantial and may impact the system, a low pass filter should be inserted between the VCC and PVCC pins, and a schottky barrier diode
established between the SW and PGND pins.
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Datasheet
BD9106FVM BD9107FVM BD9109FVM BD9110NV BD9120HFN
●I/O Equivalence Circuit
【BD9106FVM, BD9107FVM, BD9109FVM】
PVCC
PVCC
PVCC
・SW pin
・EN pin
VCC
10kΩ
SW
EN
・VOUT pin (BD9109FVM)
・ADJ pin (BD9106FVM, BD9107FVM)
VCC
VCC
10kΩ
10kΩ
VOUT
ADJ
・ITH pin
VCC
VCC
ITH
【BD9110NV, BD9120HFN】
・EN pin
・SW pin
PVCC
PVCC
PVCC
10kΩ
EN
SW
・ITH pin (BD9120HFN)
・ITH pin (BD9110NV)
VCC
VCC
ITH
ITH
10kΩ
ADJ
Fig.105 I/O equivalence circuit
36/40
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Datasheet
BD9106FVM BD9107FVM BD9109FVM BD9110NV BD9120HFN
●Operational Notes
1. Absolute Maximum Ratings
While utmost care is taken to quality control of this product, any application that may exceed some of the absolute
maximum ratings including the voltage applied and the operating temperature range may result in breakage. If broken,
short-mode or open-mode may not be identified. So if it is expected to encounter with special mode that may exceed
the absolute maximum ratings, it is requested to take necessary safety measures physically including insertion of fuses.
2. Electrical potential at GND
GND must be designed to have the lowest electrical potential In any operating conditions.
3. Short-circuiting between terminals, and mismounting
When mounting to pc board, care must be taken to avoid mistake in its orientation and alignment. Failure to do so may
result in IC breakdown. Short-circuiting due to foreign matters entered between output terminals, or between output and
power supply or GND may also cause breakdown.
4.Operation in Strong electromagnetic field}
Be noted that using the IC in the strong electromagnetic radiation can cause operation failures.
5. Thermal shutdown protection circuit
Thermal shutdown protection circuit is the circuit designed to isolate the IC from thermal runaway, and not intended to
protect and guarantee the IC. So, the IC the thermal shutdown protection circuit of which is once activated should not
be used thereafter for any operation originally intended.
6. Inspection with the IC set to a pc board
If a capacitor must be connected to the pin of lower impedance during inspection with the IC set to a pc board, the
capacitor must be discharged after each process to avoid stress to the IC. For electrostatic protection, provide proper
grounding to assembling processes with special care taken in handling and storage. When connecting to jigs in the
inspection process, be sure to turn OFF the power supply before it is connected and removed.
7. Input to IC terminals
This is a monolithic IC with P+ isolation between P-substrate and each element as illustrated below. This P-layer and
the N-layer of each element form a P-N junction, and various parasitic element are formed.
If a resistor is joined to a transistor terminal as shown in Fig 106:
○P-N junction works as a parasitic diode if the following relationship is satisfied; GND>Terminal A (at resistor side), or
GND>Terminal B (at transistor side); and
○if GND>Terminal B (at NPN transistor side),
a parasitic NPN transistor is activated by N-layer of other element adjacent to the above-mentioned parasitic diode.
The structure of the IC inevitably forms parasitic elements, the activation of which may cause interference among circuits,
and/or malfunctions contributing to breakdown. It is therefore requested to take care not to use the device in such
manner that the voltage lower than GND (at P-substrate) may be applied to the input terminal, which may result in
activation of parasitic elements.
Fig.106 Simplified structure of monorisic IC
8. Ground wiring pattern
If small-signal GND and large-current GND are provided, It will be recommended to separate the large-current GND
pattern from the small-signal GND pattern and establish a single ground at the reference point of the set PCB so that
resistance to the wiring pattern and voltage fluctuations due to a large current will cause no fluctuations in voltages of the
small-signal GND. Pay attention not to cause fluctuations in the GND wiring pattern of external parts as well.
Status of this document
The Japanese version of this document is formal specification. A customer may use this translation version only for a reference
to help reading the formal version.
If there are any differences in translation version of this document formal version takes priority.
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Datasheet
BD9106FVM BD9107FVM BD9109FVM BD9110NV BD9120HFN
●Physical Dimensions Tape and Reel information
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Datasheet
BD9106FVM BD9107FVM BD9109FVM BD9110NV BD9120HFN
●Marking Diagrams
BD9106FVM
MSOP8(TOP VIEW)
BD9107FVM
MSOP8(TOP VIEW)
Part Number Marking
LOT Number
Part Number Marking
D 9 1
D 9 1
LOT Number
0
6
0
7
1PIN MARK
1PIN MARK
BD9109FVM
MSOP8(TOP VIEW)
BD9110NV
SON008V5060 (TOP VIEW)
Part Number Marking
Part Number Marking
LOT Number
D 9 1
B D 9 11 0
LOT Number
0
9
1PIN MARK
1PIN MARK
BD9120HFN
HSON8 (TOP VIEW)
Part Number Marking
LOT Number
D 9 1
2 0
1PIN MARK
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Datasheet
BD9106FVM BD9107FVM BD9109FVM BD9110NV BD9120HFN
●Revision History
Date
Revision
001
Changes
17.Jan.2012
New Release
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Daattaasshheeeett
Notice
●Precaution for circuit design
1) The products are designed and produced for application in ordinary electronic equipment (AV equipment, OA
equipment, telecommunication equipment, home appliances, amusement equipment, etc.). If the products are to be
used in devices requiring extremely high reliability (medical equipment, transport equipment, aircraft/spacecraft,
nuclear power controllers, fuel controllers, car equipment including car accessories, safety devices, etc.) and whose
malfunction or operational error may endanger human life and sufficient fail-safe measures, please consult with the
ROHM sales staff in advance. If product malfunctions may result in serious damage, including that to human life,
sufficient fail-safe measures must be taken, including the following:
[a] Installation of protection circuits or other protective devices to improve system safety
[b] Installation of redundant circuits in the case of single-circuit failure
2) The products are designed for use in a standard environment and not in any special environments. Application of the
products in a special environment can deteriorate product performance. Accordingly, verification and confirmation of
product performance, prior to use, is recommended if used under the following conditions:
[a] Use in various types of liquid, including water, oils, chemicals, and organic solvents
[b] Use outdoors where the products are exposed to direct sunlight, or in dusty places
[c] Use in places where the products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2,
and NO2
[d] Use in places where the products are exposed to static electricity or electromagnetic waves
[e] Use in proximity to heat-producing components, plastic cords, or other flammable items
[f] Use involving sealing or coating the products with resin or other coating materials
[g] Use involving unclean solder or use of water or water-soluble cleaning agents for cleaning after soldering
[h] Use of the products in places subject to dew condensation
3) The products are not radiation resistant.
4) Verification and confirmation of performance characteristics of products, after on-board mounting, is advised.
5) In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse) is applied,
confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power
exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect
product performance and reliability.
6) De-rate Power Dissipation (Pd) depending on Ambient temperature (Ta).
When used in sealed area, confirm the actual ambient temperature.
7) Confirm that operation temperature is within the specified range described in product specification.
8) Failure induced under deviant condition from what defined in the product specification cannot be guaranteed.
●Precaution for Mounting / Circuit board design
1) When a highly active halogenous (chlorine, bromine, etc.) flux is used, the remainder of flux may negatively affect
product performance and reliability.
2) In principle, the reflow soldering method must be used; if flow soldering method is preferred, please consult with the
Company in advance.
Regarding Precaution for Mounting / Circuit board design, please specially refer to ROHM Mounting specification
●Precautions Regarding Application Examples and External Circuits
1) If change is made to the constant of an external circuit, allow a sufficient margin due to variations of the characteristics
of the products and external components, including transient characteristics, as well as static characteristics.
2) The application examples, their constants, and other types of information contained herein are applicable only when
the products are used in accordance with standard methods. Therefore, if mass production is intended, sufficient
consideration to external conditions must be made.
Notice - Rev.001
Daattaasshheeeett
●Precaution for Electrostatic
This product is Electrostatic sensitive product, which may be damaged due to Electrostatic discharge. Please take proper
caution during manufacturing and storing so that voltage exceeding Product maximum rating won't be applied to products.
Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron, isolation from
charged objects, setting of Ionizer, friction prevention and temperature / humidity control).
●Precaution for Storage / Transportation
1) Product performance and soldered connections may deteriorate if the products are stored in the following places:
[a] Where the products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2
[b] Where the temperature or humidity exceeds those recommended by the Company
[c] Storage in direct sunshine or condensation
[d] Storage in high Electrostatic
2) Even under ROHM recommended storage condition, solderability of products out of recommended storage time period
may be degraded. It is strongly recommended to confirm solderability before using products of which storage time is
exceeding recommended storage time period .
3) Store / transport cartons in the correct direction, which is indicated on a carton as a symbol. Otherwise bent leads may
occur due to excessive stress applied when dropping of a carton.
4) Use products within the specified time after opening a dry bag.
●Precaution for product label
QR code printed on ROHM product label is only for internal use, and please do not use at customer site. It might contain a
internal part number that is inconsistent with an product part number.
●Precaution for disposition
When disposing products please dispose them properly with a industry waste company.
●Precaution for Foreign exchange and Foreign trade act
Since concerned goods might be fallen under controlled goods prescribed by Foreign exchange and Foreign trade act,
please consult with ROHM in case of export.
●Prohibitions Regarding Industrial Property
1) Information and data on products, including application examples, contained in these specifications are simply for
reference; the Company does not guarantee any industrial property rights, intellectual property rights, or any other
rights of a third party regarding this information or data. Accordingly, the Company does not bear any responsibility for:
[a] infringement of the intellectual property rights of a third party
[b] any problems incurred by the use of the products listed herein.
2) The Company prohibits the purchaser of its products to exercise or use the intellectual property rights, industrial
property rights, or any other rights that either belong to or are controlled by the Company, other than the right to use,
sell, or dispose of the products.
Notice - Rev.001
相关型号:
BD9107FVM-TR
Switching Regulator, Current-mode, 1.2A, 1200kHz Switching Freq-Max, PDSO8, MSOP-8
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BD9109FVM-E2
Switching Regulator, Current-mode, 0.8A, 1200kHz Switching Freq-Max, PDSO8, LEAD FREE, MSOP-8
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BD9109FVM-LB
本产品是面向工业设备市场的产品,保证可长期稳定供货。是适合这些用途的产品。罗姆的高效率降压开关稳压器(BD9109FVM-LB)是通过5V以下的电源线生成3.3V等低电压的电源。采用独创的脉冲跳跃控制方式和同步整流电路,实现高效化。采用电流模式控制方式,实现了负载突变时的高速瞬态响应。
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BD9109FVM-LBTR
Switching Regulator, Current-mode, 0.8A, 1000kHz Switching Freq-Max, PDSO8, MSOP-8
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BD9109FVM-TR
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