BD9109FVM-TR_技术文档

Single-chip built-in FET type Switching Regulator Series

High-efficiency Step-down

Switching Regulators

with Built-in Power MOSFET

No.09027EAT33

BD9106FVM,BD9107FVM,BD9109FVM,BD9110NV,BD9120HFN

●Description

ROHM’s high efficiency step-down switching regulators (BD9106FVM,BD9107FVM,BD9109FVM,BD9110NV,BD9120HFN)

are the power supply designed to produce a low voltage including 1 volts from 5/3.3 volts power supply line. Offers high

efficiency with our original pulse skip control technology and synchronous rectifier. Employs a current mode control

system to provide faster transient response to sudden change in load.

●Features

1) Offers fast transient response with current mode PWM control system.

2) Offers highly efficiency for all load range with synchronous rectifier (Nch/Pch FET)

and SLLM^TM(Simple Light Load Mode)

3) Incorporates soft-start function.

4) Incorporates thermal protection and ULVO functions.

5) Incorporates short-current protection circuit with time delay function.

6) Incorporates shutdown function

7) Employs small surface mount package

MSOP8 (BD9106FVM,BD9107FVM,BD9109FVM), HSON8 (BD9120HFN), SON008V5060 (BD9110NV)

●Use

Power supply for LSI including DSP, Micro computer and ASIC

●Line up

Parameter

Input Voltage

BD9106FVM

BD9107FVM

BD9109FVM

BD9110NV

BD9120HFN

4.0～5.5V

4.5～5.5V

2.7～4.5V

Adjustable

(1.0～2.5V)

Adjustable

(1.0～1.8V)

Adjustable

(1.0～2.5V)

Adjustable

(1.0～1.5V)

Output Voltage

3.30±2%

Output Current

0.8A Max.

3.4V Typ.

1.2A Max.

2.7V Typ.

0.8A Max.

3.8V Typ.

2.0A Max.

3.7V Typ.

0.8A Max.

2.5V Typ.

UVLO threshold Voltage

Short-current protection

with time delay function

built-in

Soft start function

Standby current

built-in

0μA Typ.

Operating Temperature Range

Package

-25～+85℃

-25～+105℃

-25～+85℃

MSOP8

SON008V5060

HSON8

●Operating Conditions (Ta=25℃)

BD9106FVM BD9107FVM BD9109FVM

BD9110NV

BD9120HFN

Parameter

Symbol

Unit

Min. Max. Min. Max. Min. Max. Min. Max. Min. Max.

*1

VCC voltage

VCC

4.0

0

5.5

4.0

0

5.5

4.5

0

5.5

4.5

0

5.5

2.7

0

4.5

V

A

*1

PVCC voltage

EN voltage

PVCC

EN

VCC

0.8

VCC

1.2

VCC

0.8

VCC

2.0

VCC

0.8

SW average output current

Isw ^*1

-

*1 Pd should not be exceeded.

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2009.05 - Rev.A

1/28

BD9106FVM,BD9107FVM,BD9109FVM,BD9110NV,BD9120HFN

Technical Note

●Absolute Maximum Rating (Ta=25℃)

Limits

Parameter

Symbol

Unit

BD910□FVM

-0.3～+7 ^*2

-0.3～+7

387.5^*3

BD9110NV

-0.3～+7 ^*2

-0.3～+7

900^*5

BD9120HFN

VCC voltage

PVCC voltage

VCC

PVCC

EN

SW,ITH

Pd1

Pd2

Topr

Tstg

Tjmax

-0.3～+7 ^*2

-0.3～+7

1350^*7

V

EN voltage

SW,ITH voltage

V

Power dissipation 1

Power dissipation 2

Operating temperature range

Storage temperature range

Maximum junction temperature

mW

℃

587.4^*4

3900^*6

-25～+105

-55～+150

+150

1750^*8

-25～+85

-55～+150

+150

-25～+85

-55～+150

+150

*2

*3

*4

*5

Pd should not be exceeded.

Derating in done 3.1mW/℃for temperatures above Ta=25℃.

Derating in done 4.7mW/℃for temperatures above Ta=25℃, Mounted on 70mm×70mm×1.6mm Glass Epoxy PCB.

Derating in done 7.2mW/℃for temperatures above Ta=25℃, Mounted on 70mm×70mm×1.6mm Glass Epoxy PCB

which has 1 layer (3%) of copper on the back side).

*6

*7

Derating in done 31.2mW/℃for temperatures above Ta=25℃, Mounted on a board according to JESD51-7.

Derating in done 10.8mW/℃for temperatures above Ta=25℃, Mounted on 70mm×70mm×1.6mm Glass Epoxy PCB

which has 1 layer (7%) of copper on the back side).

*8

Derating in done 14mW/℃for temperatures above Ta=25℃, Mounted on 70mm×70mm×1.6mm Glass Epoxy PCB

which has 1 layer (65%) of copper on the back side).

●Electrical Characteristics

◎BD9106FVM (Ta=25℃, VCC=5V, EN=VCC, R1=20kΩ, R2=10kΩ unless otherwise specified.)

Parameter

Standby current

Bias current

EN Low voltage

EN High voltage

Symbol

ISTB

ICC

VENL

VENH

IEN

FOSC

RONP

RONN

VADJ

VOUT

ITHSI

ITHSO

VUVLOTh

VUVLOHys

TSS

Min.

-

Typ.

0

250

GND

VCC

1

Max.

10

400

0.8

-

Unit

μA

V

Conditions

EN=GND

-

Standby mode

Active mode

VEN=5V

2.0

-

0.8

-

V

EN input current

10

μA

MHz

Ω

V

Oscillation frequency

Pch FET ON resistance ^*9

Nch FET ON resistance ^*9

ADJ Voltage

Output voltage

ITH SInk current

ITH Source Current

UVLO threshold voltage

UVLO hysteresis voltage

Soft start time

1

1.2

0.60

0.50

0.820

-

0.35

0.25

0.800

1.200

20

PVCC=5V

-

0.780

-

*9

V

10

3.2

50

1.5

0.5

-

μA

V

mV

ms

ADJ=H

ADJ=L

VCC=H→L

20

3.4

100

3

3.6

200

6

Timer latch time

TLATCH

1

2

*9 Design Guarantee（Outgoing inspection is not done on all products）

◎BD9107FVM (Ta=25℃, VCC=5V, EN=VCC, R1=20kΩ, R2=10kΩ unless otherwise specified.)

Parameter

Standby current

Bias current

EN Low voltage

EN High voltage

Symbol

ISTB

ICC

VENL

VENH

IEN

FOSC

RONP

RONN

VADJ

VOUT

ITHSI

ITHSO

VUVLOTh

VUVLOHys

TSS

Min.

-

Typ.

0

250

GND

VCC

1

Max.

10

400

0.8

-

Unit

μA

V

Conditions

EN=GND

-

Standby mode

Active mode

VEN=5V

2.0

-

0.8

-

V

EN input current

10

μA

MHz

Ω

V

Oscillation frequency

Pch FET ON resistance ^*9

Nch FET ON resistance ^*9

ADJ Voltage

Output voltage

ITH SInk current

ITH Source Current

UVLO threshold voltage

UVLO hysteresis voltage

Soft start time

1

1.2

0.60

0.50

0.820

-

0.35

0.25

0.800

1.200

20

PVCC=5V

-

0.780

-

*9

V

10

2.6

150

0.5

-

μA

V

mV

ms

VOUT =H

VOUT =L

VCC=H→L

20

2.7

300

1

2.8

600

2

Timer latch time

TLATCH

1

2

*9 Design Guarantee（Outgoing inspection is not done on all products）

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2009.05 - Rev.A

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BD9106FVM,BD9107FVM,BD9109FVM,BD9110NV,BD9120HFN

Technical Note

●Electrical Characteristics

◎BD9109FVM (Ta=25℃, VCC=PVCC=5V, EN= VCC unless otherwise specified.)

Parameter

Standby current

Bias current

EN Low voltage

EN High voltage

Symbol

ISTB

ICC

Min.

-

Typ.

0

250

GND

VCC

1

Max.

10

400

0.8

-

Unit

μA

V

Conditions

EN=GND

VENL

VENH

IEN

FOSC

RONP

RONN

VOUT

ITHSI

ITHSO

VUVLO1

VUVLO2

TSS

-

Standby mode

Active mode

VEN=5V

2.0

-

0.8

-

V

EN input current

10

μA

MHz

Ω

V

μA

V

ms

Oscillation frequency

Pch FET ON resistance ^*9

Nch FET ON resistance ^*9

Output voltage

1

1.2

0.60

0.50

3.366

-

0.35

0.25

3.300

20

PVCC=5V

-

3.234

10

3.6

3.65

0.5

1

ITH SInk current

VOUT =H

VOUT =L

VCC=H→L

VCC=L→H

ITH Source Current

UVLO threshold voltage

UVLO hysteresis voltage

Soft start time

20

-

3.8

3.9

1

4.0

4.2

2

Timer latch time

TLATCH

2

3

SCP/TSD operated

Output Short circuit

Threshold Voltage

VSCP

-

2

2.7

V

VOUT =H→L

*9 Design Guarantee（Outgoing inspection is not done on all products）

◎BD9110NV (Ta=25℃, VCC=PVCC=5V, EN=VCC, R1=10kΩ,R2=5kΩ unless otherwise specified.)

Parameter

Standby current

Bias current

EN Low voltage

EN High voltage

Symbol

ISTB

ICC

VENL

VENH

IEN

FOSC

RONP

RONN

VADJ

VOUT

ITHSI

ITHSO

VUVLOTh

VUVLOHys

TSS

Min.

-

Typ.

0

250

GND

VCC

1

Max.

10

350

0.8

-

Unit

μA

V

Conditions

EN=GND

-

Standby mode

Active mode

VEN=5V

2.0

-

0.8

-

V

EN input current

10

μA

MHz

mΩ

V

Oscillation frequency

Pch FET ON resistance ^*9

Nch FET ON resistance ^*9

ADJ Voltage

Output voltage

ITH SInk current

ITH Source Current

UVLO threshold voltage

UVLO hysteresis voltage

Soft start time

1

1.2

320

270

0.820

-

200

150

0.800

1.200

20

PVCC=5V

-

0.780

-

*9

V

10

3.5

50

2.5

0.5

-

μA

V

mV

ms

VOUT =H

VOUT =L

VCC=H→L

20

3.7

100

5

3.9

200

10

Timer latch time

TLATCH

1

2

*9 Design Guarantee（Outgoing inspection is not done on all products）

◎BD9120HFN (Ta=25℃, VCC=PVCC=3.3V, EN=VCC, R1=20kΩ, R2=10kΩ unless otherwise specified.)

Parameter

Standby current

Bias current

EN Low voltage

EN High voltage

Symbol

ISTB

ICC

Min.

-

2.0

-

0.8

-

Typ.

0

200

GND

VCC

1

Max.

10

400

0.8

-

Unit

μA

V

Conditions

EN=GND

VENL

VENH

IEN

FOSC

RONP

RONN

VADJ

VOUT

ITHSI

ITHSO

VUVLO1

VUVLO2

TSS

Standby mode

Active mode

VEN=3.3V

V

EN input current

10

μA

MHz

Ω

V

Oscillation frequency

Pch FET ON resistance ^*9

Nch FET ON resistance ^*9

ADJ Voltage

Output voltage

ITH SInk current

ITH Source Current

UVLO threshold voltage

UVLO hysteresis voltage

Soft start time

1

1.2

0.60

0.50

0.820

-

0.35

0.25

0.800

1.200

20

PVCC=3.3V

-

0.780

-

10

*9

V

-

μA

V

ms

VOUT =H

VOUT =L

VCC=H→L

VCC=L→H

10

20

2.400

2.425

0.5

1

2.500

2.550

1

2.600

2.700

2

Timer latch time

TLATCH

2

3

SCP/TSD operated

Output Short circuit

Threshold Voltage

VSCP

-

VOUT×0.5

VOUT×0.7

V

VOUT =H→L

*9 Design Guarantee（Outgoing inspection is not done on all products）

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2009.05 - Rev.A

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BD9106FVM,BD9107FVM,BD9109FVM,BD9110NV,BD9120HFN

Technical Note

●Characteristics data【BD9106FVM】

2.0

1.5

1.0

0.5

0.0

2.0

【VOUT=1.8V】

Ta=25℃

1.5

1.0

0.5

0.0

Io=0A

1.5

1.0

0.5

0.0

VCC=5V

Ta=25℃

Io=0A

VCC=5V

Ta=25℃

0

1

2

3

0

1

2

3

4

5

0

1

2

3

4

5

INPUT VOLTAGE:V [V]

CC

OUTPUT CURRENT:I

[A]

EN VOLTAGE:VEN[V]

OUT

Fig.1 Vcc-Vout

Fig.2 Ven-Vout

Fig.3 Iout-Vout

100

90

80

70

60

50

40

30

20

10

0

1.20

1.15

1.10

1.05

1.00

0.95

0.90

0.85

0.80

1.85

1.84

1.83

1.82

1.81

1.80

1.79

1.78

1.77

1.76

1.75

【VOUT=1.8V】

VCC=5V

Io=0A

VCC=5V

Ta=25℃

-25 -15 -5

5

15 25 35 45 55 65 75 85

1

10

100

1000

-25 -15 -5

5

15 25 35 45 55 65 75 85

TEMPERATURE:Ta[

]

℃

OUTPUT CURRENT:I_OUT[mA]

TEMPERATURE:Ta[

]

℃

Fig.4 Ta-Vout

Fig.5 Efficiency

Fig.6 Ta-Fosc

0.40

0.35

0.30

0.25

0.20

0.15

0.10

0.05

0.00

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

350

300

250

200

150

100

50

VCC=5V

PMOS

NMOS

VCC=5V

0

-25 -15 -5

5

15 25 35 45 55 65 75 85

-25 -15 -5

5

15 25 35 45 55 65 75 85

-25 -15 -5

5

15 25 35 45 55 65 75 85

TEMPERATURE:Ta[

]

℃

TEMPERATURE:Ta[

]

TEMPERATURE:Ta[ ]

℃

Fig.7 Ta-Ronn, Ronp

Fig.8 Ta-Ven

Fig.9 Ta-Icc

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2009.05 - Rev.A

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BD9106FVM,BD9107FVM,BD9109FVM,BD9110NV,BD9120HFN

Technical Note

1.2

【V^OUT=1.8V】

【SLLM control

V^OUT=1.8V】

V^CC=PVCC

=EN

1.1

SW

1

V^OUT

VOUT

0.9

0.8

VCC=5V

Ta=25℃

Io=0A

VCC=5V

Ta=25℃

4

4.5

5

5.5

INPUT VOLTAGE:V_CC[V]

Fig.10 Vcc-Fosc

Fig.11 Soft start waveform

Fig.12 SW waveform Io=10mA

【VOUT=1.8V】

【PWM control

V^OUT=1.8V】

【V^OUT=1.8V】

VOUT

SW

IOUT

V^OUT

I^OUT

VCC=5V

Ta=25℃

VCC=5V

Ta=25℃

VCC=5V

Ta=25℃

Fig.13 SW waveform Io=200mA

Fig. 14 Transient response

Fig.15 Transient response

Io=100→600mA(10μs)

Io=600→100mA(10μs)

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2009.05 - Rev.A

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BD9106FVM,BD9107FVM,BD9109FVM,BD9110NV,BD9120HFN

Technical Note

●Characteristics data【BD9107FVM】

2.0

1.5

1.0

0.5

0.0

2.0

1.5

1.0

0.5

0.0

2.0

1.5

1.0

0.5

0.0

VCC=5V

【VOUT=1.5V】

Ta=25℃

Io=0A

VCC=5V

Ta=25℃

Io=0A

0

1

2

3

4

5

0

1

2

3

0

1

2

3

4

5

INPUT VOLTAGE:V [V]

CC

OUTPUT CURRENT:I

[A]

EN VOLTAGE:VEN[V]

OUT

Fig.16 Vcc-Vout

Fig.17 Ven-Vout

Fig.18 Iout-Vout

100

90

80

70

60

50

40

30

20

10

0

1.55

1.54

1.53

1.52

1.51

1.50

1.49

1.48

1.47

1.46

1.45

1.20

1.15

1.10

1.05

1.00

0.95

0.90

0.85

0.80

【VOUT=1.5V】

VCC=5V

Io=0A

VCC=5V

Ta=25℃

1

10

100

1000

10000

-25 -15 -5

5

15 25 35 45 55 65 75 85

-25 -15 -5

5

15 25 35 45 55 65 75 85

OUTPUT CURRENT:I_OUT[mA]

TEMPERATURE:Ta[

]

℃

TEMPERATURE:Ta[

]

℃

Fig.19 Ta-Vout

Fig.20 Efficiency

Fig.21 Ta-Fosc

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

0.40

0.35

0.30

0.25

0.20

0.15

0.10

0.05

350

300

250

200

150

100

50

VCC=5V

PMOS

NMOS

VCC=5V

Fig.22 温度-NMOS FET ON 抵抗

0

0.00

-25 -15 -5

5

15 25 35 45 55 65 75 85

-25 -15 -5

5

15 25 35 45 55 65 75 85

-25 -15 -5

5

15 25 35 45 55 65 75 85

TEMPERATURE:Ta[℃]

Fig.22 Ta-RONN, RONP

Fig.23 Ta-VEN

Fig.24 Ta-ICC

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2009.05 - Rev.A

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BD9106FVM,BD9107FVM,BD9109FVM,BD9110NV,BD9120HFN

Technical Note

1.2

【V^OUT=1.5V】

【SLLM control

VOUT=1.5V】

V^CC=PVCC

=EN

1.1

SW

1

VOUT

V^OUT

0.9

VCC=5V

Ta=25℃

Io=0A

0.8

4

4.5

5

5.5

INPUT VOLTAGE:V_CC[V]

Fig.25 Vcc-Fosc

Fig.26 Soft start waveform

Fig.27 SW waveform Io=10mA

【V^OUT=1.5V】

【PWM control

VOUT=1.5V】

V^OUT

VOUT

SW

IOUT

V^OUT

I^OUT

VCC=5V

Ta=25℃

VCC=5V

Ta=25℃

VCC=5V

Ta=25℃

Fig.28 SW waveform Io=500mA

Fig. 29 Transient response

Fig.30 Transient response

Io=100→600mA(10μs)

Io=600→100mA(10μs)

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2009.05 - Rev.A

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BD9106FVM,BD9107FVM,BD9109FVM,BD9110NV,BD9120HFN

Technical Note

●Characteristics data【BD9109FVM】

4.0

3.0

2.0

1.0

0.0

4.0

3.0

2.0

1.0

0.0

4.0

3.0

2.0

1.0

0.0

Ta=25℃

Io=0A

VCC=5V

Ta=25℃

Io=0A

VCC=5V

Ta=25℃

0

1

2

3

0

1

2

3

4

5

0

1

2

3

4

5

INPUT VOLTAGE:V [V]

CC

OUTPUT CURRENT:I [A]

OUT

EN VOLTAGE:VEN[V]

Fig.31 Vcc-Vout

Fig.32 Ven-Vout

Fig.33 Iout-Vout

100

90

80

70

60

50

40

30

20

10

0

3.50

3.45

3.40

3.35

3.30

3.25

3.20

3.15

3.10

3.05

3.00

1.20

1.15

1.10

1.05

1.00

0.95

0.90

0.85

0.80

VCC=5V

Io=0A

VCC=5V

Ta=25℃

-25 -15 -5

5

15 25 35 45 55 65 75 85

-25 -15 -5

5

15 25 35 45 55 65 75 85

1

10

100

1000

TEMPERATURE:Ta[

]

℃

TEMPERATURE:Ta[ ]

℃

OUTPUT CURRENT:I_OUT[mA]

Fig. 34 Ta-Vout

Fig.35 Efficiency

Fig.36 Ta-Fosc

350

300

250

200

150

100

50

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

0.40

0.35

0.30

0.25

0.20

0.15

0.10

0.05

0.00

VCC=5V

PMOS

VCC=5V

NMOS

0

-25 -15 -5

5

15 25 35 45 55 65 75 85

-25 -15 -5

5

15 25 35 45 55 65 75 85

-25 -15 -5

5

15 25 35 45 55 65 75 85

TEMPERATURE:Ta[℃]

Fig.37 Ta-Ronn, Ronp

Fig.38 Ta-Ven

Fig.39 Ta-Icc

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2009.05 - Rev.A

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BD9106FVM,BD9107FVM,BD9109FVM,BD9110NV,BD9120HFN

Technical Note

1.2

【SLLM control】

V^CC=PVCC

=EN

1.1

SW

1

V^OUT

VOUT

0.9

VCC=5V

Ta=25℃

Io=0A

VCC=5V

Ta=25℃

0.8

4

4.5

5

5.5

INPUT VOLTAGE:V^CC[V]

Fig.40 Vcc-Fosc

Fig.41 Soft start waveform

Fig.42 SW waveform Io=10mA

【PWM control】

VOUT

SW

I^OUT

VCC=5V

Ta=25℃

VCC=5V

Ta=25℃

V^OUT

VCC=5V

Ta=25℃

I^OUT

Fig.43 SW waveform Io=500mA

Fig. 44 Transient response

Fig.45 Transient response

Io=100→600mA(10μs)

Io=600→100mA(10μs)

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2009.05 - Rev.A

9/28

BD9106FVM,BD9107FVM,BD9109FVM,BD9110NV,BD9120HFN

Technical Note

●Characteristics data【BD9110NV】

2.0

1.5

1.0

0.5

0.0

2.0

1.5

1.0

0.5

0.0

2.0

1.5

1.0

0.5

0.0

【VOUT=1.4V】

Ta=25℃

Io=0A

VCC=5V

Ta=25℃

Io=0A

VCC=5V

Ta=25℃

0

1

2

3

4

5

0

1

2

3

4

5

0

1

2

3

[A]

4

INPUT VOLTAGE:V [V]

CC

EN VOLTAGE:VEN[V]

OUTPUT CURRENT:I

OUT

Fig.46 Vcc-Vout

Fig.47 Ven-Vout

Fig.48 Iout-Vout

1.45

1.44

1.43

1.42

1.41

1.40

1.39

1.38

1.37

1.36

1.35

100

90

80

70

60

50

40

30

20

10

0

1.20

1.15

1.10

1.05

1.00

0.95

0.90

0.85

0.80

【VOUT=1.4V】

VCC=5V

Ta=25℃

VCC=5V

Io=0A

-25 -15 -5

5

15 25 35 45 55 65 75 85 95 105

-25 -15 -5

5

15 25 35 45 55 65 75 85 95 105

10

100

1000

10000

TEMPERATURE:Ta[

]

℃

TEMPERATURE:Ta[

]

℃

OUTPUT CURRENT:I_OUT[mA]

Fig. 49 Ta-Vout

Fig.50 Efficiency

Fig.51 Ta-Fosc

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

400

350

300

250

200

150

100

50

0.40

0.35

0.30

0.25

0.20

0.15

0.10

0.05

0.00

VCC=5V

PMOS

NMOS

0

-25 -15 -5

5

15 25 35 45 55 65 75 85 95 105

-25 -15 -5

5

15 25 35 45 55 65 75 85 95 105

-25 -15 -5

5

15 25 35 45 55 65 75 85 95 105

TEMPERATURE:Ta[ ]

℃

TEMPERATURE:Ta[ ]

℃

TEMPERATURE:Ta[

]

℃

Fig.52 Ta-Ronn, Ronp

Fig.53 Ta-Ven

Fig.54 Ta-Icc

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2009.05 - Rev.A

10/28

BD9106FVM,BD9107FVM,BD9109FVM,BD9110NV,BD9120HFN

Technical Note

1.2

【VOUT=1.4V】

Ta=25℃

【SLLM control

VOUT=1.4V】

V^CC=PVCC

=EN

1.1

1

SW

V^OUT

VOUT

0.9

0.8

VCC=5V

Ta=25℃

Io=0A

VCC=5V

Ta=25℃

4.5

5

5.5

INPUT VOLTAGE:V_CC[V]

Fig.55 Vcc-Fosc

Fig.56 Soft start waveform

Fig.57 SW waveform Io=10mA

【VOUT=1.4V】

【V^OUT=1.4V】

【PWM control

V^OUT=1.4V】

VOUT

SW

IOUT

I^OUT

VCC=5V

Ta=25℃

V^OUT

VCC=5V

Ta=25℃

VCC=5V

Ta=25℃

Fig.58 SW waveform Io=500mA

Fig. 59 Transient response

Fig.60 Transient response

Io=100→600mA(10μs)

Io=600→100mA(10μs)

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2009.05 - Rev.A

11/28

BD9106FVM,BD9107FVM,BD9109FVM,BD9110NV,BD9120HFN

Technical Note

●Characteristics data【BD9120HFN】

2.0

1.5

1.0

0.5

0.0

2.0

【VOUT=1.5V】

Ta=25℃

Io=0A

1.5

1.0

0.5

0.0

1.5

1.0

0.5

0.0

VCC=3.3V

Ta=25℃

Io=0A

VCC=3.3V

Ta=25℃

0

1

2

3

0

1

2

3

4

5

0

1

2

3

4

5

INPUT VOLTAGE:V [V]

OUTPUT CURRENT:I

OUT

[A]

CC

EN VOLTAGE:VEN[V]

Fig.61 Vcc-Vout

Fig.62 Ven-Vout

Fig.63 Iout-Vout

1.55

1.54

1.53

1.52

1.51

1.50

1.49

1.48

1.47

1.46

1.45

1.20

1.15

1.10

1.05

1.00

0.95

0.90

0.85

0.80

100

90

80

70

60

50

40

30

20

10

0

【VOUT=1.5V】

VCC=3.3V

Io=0A

【VOUT=1.5V】

VCC=3.3V

Ta=25℃

-25 -15 -5

5

15 25 35 45 55 65 75 85

-25 -15 -5

5

15 25 35 45 55 65 75 85

1

10

100

1000

TEMPERATURE:Ta[

]

℃

TEMPERATURE:Ta[

]

OUTPUT CURRENT:I_OUT[mA]

℃

Fig. 64 Ta-Vout

Fig.65 Efficiency

Fig.66 Ta-Fosc

Fig. 64 Ta-VOUT

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

0.40

0.35

0.30

0.25

0.20

0.15

0.10

0.05

0.00

300

270

240

210

180

150

120

90

VCC=3.3V

PMOS

NMOS

60

30

0

-25 -15 -5

5

15 25 35 45 55 65 75 85

-25 -15 -5

5

15 25 35 45 55 65 75 85

-25 -15 -5

5

15 25 35 45 55 65 75 85

TEMPERATURE:Ta[

]

℃

TEMPERATURE:Ta[

]

℃

TEMPERATURE:Ta[

]

℃

Fig.67 Ta-Ronn, Ronp

Fig.68 Ta-Ven

Fig.69 Ta-Icc

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2009.05 - Rev.A

12/28

BD9106FVM,BD9107FVM,BD9109FVM,BD9110NV,BD9120HFN

Technical Note

1.2

【V^OUT=1.5V】

【SLLM control

VOUT=1.5V】

Ta=25℃

V^CC=PVCC

=EN

1.1

SW

1

V^OUT

0.9

0.8

V^OUT

VCC=3.3V

Ta=25℃

Io=0A

VCC=3.3V

Ta=25℃

2.7

3.6

4.5

INPUT VOLTAGE:V_CC[V]

Fig.70 Vcc-Fosc

Fig.71 Soft start waveform

Fig.72 SW waveform Io=10mA

【VOUT=1.5V】

【PWM control

V^OUT=1.5V】

【V^OUT=1.5V】

VOUT

SW

VOUT

IOUT

I^OUT

V^OUT

VCC=3.3V

Ta=25℃

VCC=3.3V

Ta=25℃

VCC=3.3V

Ta=25℃

Fig.73 SW waveform Io=200mA

Fig. 74 Transient response

Fig.75 Transient response

Io=100→600mA(10μs)

Io=600→100mA(10µs)

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2009.05 - Rev.A

13/28

BD9106FVM,BD9107FVM,BD9109FVM,BD9110NV,BD9120HFN

Technical Note

●Block Diagram, Application Circuit

【BD9106FVM, BD9107FVM】

VCC

EN

3

V^CC

8

VREF

5V

Input

7

PV^CC

Current

Comp.

ADJ

ITH

V^CC

PV^CC

SW

1

2

8

7

6

10µF

Current

Sense/

Protect

Q

R

Gm Amp.

S

4.7µH

Output

+

SLOPE

CLK

6

EN

3

4

OSC

UVLO

TSD

V^CC

SW

10µF

Driver

Logic

GND

PGND

5

Soft

Start

5

4

PGND

GND

TOP View

1

2

ADJ

ITH

Fig.76 BD9106FVM,BD9107FVM TOP View

Fig.77 BD9106FVM,BD9107FVM Block Diagram

VCC

【BD9109FVM】

EN

3

V^CC

8

7

VREF

5V

Input

V^OUT

ITH

V^CC

PV^CC

SW

1

2

8

7

6

PV^CC

Current

Comp.

10µF

Current

Sense/

Protect

R

Q

Gm Amp.

S

4.7µH

Output

EN

3

4

SLOPE

CLK

+

6

OSC

V^CC

SW

10µF

Driver

Logic

GND

PGND

5

UVLO

Soft

Start

5

4

TSD

SCP

PGND

GND

TOP View

1

2

V^OUT

ITH

Fig.78 BD9109FVM TOP View

Fig.79. BD9109FVM Block Diagram

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2009.05 - Rev.A

14/28

BD9106FVM,BD9107FVM,BD9109FVM,BD9110NV,BD9120HFN

Technical Note

【BD9110NV】

VCC

EN

8

VCC

ADJ 1

8

EN

2

VREF

5V

Input

VCC 2

ITH 3

7

6

PVCC

SW

7

10µF

PVCC

Current

Comp

Current

Sense/

Protect

R

S

Q

+

GND 4

5

PGND

+

2.2µH

Output

SLOPE

Gm Amp.

CLK

Driver

Logic

6

TOP View

OSC

+

SW

22µF

VCC

UVLO

TSD

Soft

Start

5

PGND

4

GND

1

3

ITH

ADJ

R1

CITH

RITH

R2

Fig.80 BD9110NV TOP View

Fig.81 BD9110NV Block Diagram

【BD9120HFN】

VCC

EN

3

VCC

8

VREF

3.3V

Input

1

2

3

ADJ

ITH

VCC

PVCC

SW

8

7

6

PVCC

7

10µF

Current

Comp

EN

4

GND

PGND

5

Current

Sense/

Protect

Q

R

S

+

TOP View

4.7µH

Output

6

+

Gm Amp.

SLOPE

VCC

CLK

OSC

Driver

Logic

+

SW

10µF

UVLO

TSD

Soft

Start

5

PGND

SCP

4

GND

1

2

ADJ

R1

ITH

CITH

RITH

R2

Fig.82 BD9120HFN TOP View

Fig.83 BD9120HFN Block Diagram

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2009.05 - Rev.A

15/28

BD9106FVM,BD9107FVM,BD9109FVM,BD9110NV,BD9120HFN

Technical Note

●Pin number and function

【BD9106FVM, BD9107FVM, BD9109FVM】

Pin No.

Pin name

ADJ/VOUT

ITH

EN

GND

PGND

SW

PVCC

VCC

PIN function

1

2

3

4

5

6

7

8

Output voltage detect pin/ ADJ for BD9106･07FVM

GmAmp output pin/Connected phase compensation capacitor

Enable pin(Active High)

Ground

Nch FET source pin

Pch/Nch FET drain output pin

Pch FET source pin

VCC power supply input pin

【BD9110NV】

Pin No.

Pin name

ADJ

PIN function

Output voltage adjust pin

VCC power supply input pin

GmAmp output pin/Connected phase compensation capacitor

Ground

Nch FET source pin

Pch/Nch FET drain output pin

Pch FET source pin

1

2

3

4

5

6

7

8

VCC

ITH

GND

PGND

SW

PVCC

EN

Enable pin(Active High)

【BD9120HFN】

Pin No.

Pin name

ADJ

PIN function

Output voltage adjust pin

GmAmp output pin/Connected phase compensation capacitor

Enable pin(Active High)

Ground

Nch FET source pin

Pch/Nch FET drain output pin

Pch FET source pin

VCC power supply input pin

1

2

3

4

5

6

7

8

ITH

EN

GND

PGND

SW

PVCC

VCC

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2009.05 - Rev.A

16/28

BD9106FVM,BD9107FVM,BD9109FVM,BD9110NV,BD9120HFN

Technical Note

●Information on advantages

Advantage 1：Offers fast transient response with current mode control system.

Conventional product (VOUT of which is 3.3 volts)

BD9109FVM (Load response IO=100mA→600mA)

V^OUT

228mV

140mV

IOUT

I^OUT

Voltage drop due to sudden change in load was reduced by about 40%.

Fig.84 Comparison of transient response

Advantage 2： Offers high efficiency for all load range.

・For lighter load:

Utilizes the current mode control mode called SLLM^TMfor lighter load, which reduces various dissipation such as

switching dissipation (PSW), gate charge/discharge dissipation, ESR dissipation of output capacitor (PESR) and

on-resistance dissipation (PRON) that may otherwise cause degradation in efficiency for lighter load.

Achieves efficiency improvement for lighter load.

・For heavier load:

100

SLLM^TM

②

Utilizes the synchronous rectifying mode and the low on-resistance

MOS FETs incorporated as power transistor.

50

0

①

PWM

①inprovement by SLLM system

②improvement by synchronous rectifier

ON resistance of P-channel MOS FET: 0.2～0.35 ꢀ (Typ.)

ON resistance of N-channel MOS FET: 0.15～0.25 ꢀ (Typ.)

0.001

0.01

0.1

1

Output current Io[A]

Fig.85 Efficiency

Achieves efficiency improvement for heavier load.

Offers high efficiency for all load range with the improvements mentioned above.

Advantage 3：・Supplied in smaller package due to small-sized power MOS FET incorporated.

(3 package like MOSP8, HSON8, SON008V5060)

・Allows reduction in size of application products

・Output capacitor Co required for current mode control: 10 μF ceramic capacitor

・Inductance L required for the operating frequency of 1 MHz: 4.7 μH inductor

(BD9110NV:Co=22µF, L=2.2µH)

Reduces a mounting area required.

V^CC

15mm

CIN

Cin

R^ITH

L

DC/DC

Convertor

Controller

L

V^OUT

10mm

CITH

RITH

CITH

Co

C^O

Fig.86 Example application

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2009.05 - Rev.A

17/28

BD9106FVM,BD9107FVM,BD9109FVM,BD9110NV,BD9120HFN

Technical Note

●Operation

BD9106FVM,BD9107FVM,BD9109FVM,BD9110NV,BD9120HFN are a synchronous rectifying step-down switching

regulator that achieves faster transient response by employing current mode PWM control system. It utilizes switching

operation in PWM (Pulse Width Modulation) mode for heavier load, while it utilizes SLLM^TM(Simple Light Load Mode)

operation for lighter load to improve efficiency.

○Synchronous rectifier

It does not require the power to be dissipated by a rectifier externally connected to a conventional DC/DC converter IC,

and its P.N junction shoot-through protection circuit limits the shoot-through current during operation, by which the

power dissipation of the set is reduced.

○Current mode PWM control

Synthesizes a PWM control signal with a inductor current feedback loop added to the voltage feedback.

・PWM (Pulse Width Modulation) control

The oscillation frequency for PWM is 1 MHz. SET signal form OSC turns ON a P-channel MOS FET (while a

N-channel MOS FET is turned OFF), and an inductor current I_Lincreases. The current comparator (Current Comp)

receives two signals, a current feedback control signal (SENSE: Voltage converted from I_L) and a voltage feedback

control signal (FB), and issues a RESET signal if both input signals are identical to each other, and turns OFF the

P-channel MOS FET (while a N-channel MOS FET is turned ON) for the rest of the fixed period. The PWM control

repeat this operation.

・SLLM^TM(Simple Light Load Mode) control

When the control mode is shifted from PWM for heavier load to the one for lighter load or vise versa, the switching

pulse is designed to turn OFF with the device held operated in normal PWM control loop, which allows linear

operation without voltage drop or deterioration in transient response during the mode switching from light load to

heavy load or vise versa.

Although the PWM control loop continues to operate with a SET signal from OSC and a RESET signal from Current

Comp, it is so designed that the RESET signal is held issued if shifted to the light load mode, with which the switching

is tuned OFF and the switching pulses are thinned out under control. Activating the switching intermittently reduces

the switching dissipation and improves the efficiency.

SENSE

Current

Comp

V^OUT

RESET

FB

R

S

Q

IL

Level

Shift

SET

Driver

Logic

V^OUT

Gm Amp.

SW

Load

OSC

ITH

Fig.87 Diagram of current mode PWM control

PVCC

SENSE

PVCC

Current

Comp

Current

Comp

SENSE

FB

SET

GND

RESET

SW

RESET

GND

SW

GND

I^L

I^L(AVE)

I^L

0A

V^OUT

V^OUT(AVE)

Not switching

Fig.88 PWM switching timing chart

Fig.89 SLLM switching timing chart

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2009.05 - Rev.A

18/28

BD9106FVM,BD9107FVM,BD9109FVM,BD9110NV,BD9120HFN

Technical Note

●Description of operations

・Soft-start function

EN terminal shifted to “High” activates a soft-starter to gradually establish the output voltage with the current limited

during startup, by which it is possible to prevent an overshoot of output voltage and an inrush current.

・Shutdown function

With EN terminal shifted to “Low”, the device turns to Standby Mode, and all the function blocks including reference

voltage circuit, internal oscillator and drivers are turned to OFF. Circuit current during standby is 0 μF (Typ.).

・UVLO function

Detects whether the input voltage sufficient to secure the output voltage of this IC is supplied. And the hysteresis width

of 50～300 mV (Typ.) is provided to prevent output chattering.

Hysteresis 50～300mV

VCC

EN

V^OUT

Tss

Soft start

Standby

mode

Standby

mode

Standby mode

Operating mode

Standby mode

UVLO

EN

UVLO

*Soft Start time(typ.)

Fig.90 Soft start, Shutdown, UVLO timing chart

BD9106FVM

3

BD9107FVM BD9109FVM

BD9110NV

5

BD9120HFN

1

Unit

msec

Tss

1

・Short-current protection circuit with time delay function

Turns OFF the output to protect the IC from breakdown when the incorporated current limiter is activated continuously for the

fixed time(TLATCH) or more. The output thus held tuned OFF may be recovered by restarting EN or by re-unlocking UVLO.

EN

Output OFF

latch

V^OUT

Limit

IL

1msec

Standby

mode

Standby

mode

Operating mode

EN

Timer latch

EN

*Timer Latch time (typ.)

Fig.91 Short-current protection circuit with time delay timing chart

BD9106FVM

1

BD9107FVM

1

BD9109FVM

2

BD9110NV

1

BD9120HFN

2

Unit

msec

TLATCH

※

In addition to current limit circuit, output short detect circuit is built in on BD9109FVM and BD9120HFN. If output voltage fall below

2V(typ, BD9109FVM) or Vout×0.5(typ,BD9120HFN), output voltage will hold turned OFF.

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2009.05 - Rev.A

19/28

BD9106FVM,BD9107FVM,BD9109FVM,BD9110NV,BD9120HFN

Technical Note

●Switching regulator efficiency

Efficiency ŋ may be expressed by the equation shown below:

VOUT×IOUT

Vin×Iin

POUT

η=

×100[%]=

×100[%]

POUT+PDα

Efficiency may be improved by reducing the switching regulator power dissipation factors P_Dα as follows:

Dissipation factors:

1) ON resistance dissipation of inductor and FET：PD(I²R)

2) Gate charge/discharge dissipation：PD(Gate)

3) Switching dissipation：PD(SW)

4) ESR dissipation of capacitor：PD(ESR)

5) Operating current dissipation of IC：PD(IC)

2

1)PD(I²R)=IOUT ×(RCOIL+RON) (RCOIL[ꢀ]：DC resistance of inductor, RON[ꢀ]：ON resistance of FETIOUT[A]：Output current.)

2)PD(Gate)=Cgs×f×V (Cgs[F]：Gate capacitance of FET,f[H]：Switching frequency,V[V]：Gate driving voltage of FET)

Vin²×CRSS×IOUT×f

3)PD(SW)=

(CRSS[F]：Reverse transfer capacitance of FET、IDRIVE[A]：Peak current of gate.)

IDRIVE

2

4)PD(ESR)=IRMS ×ESR (IRMS[A]：Ripple current of capacitor,ESR[ꢀ]：Equivalent series resistance.)

5)PD(IC)=Vin×ICC (ICC[A]：Circuit current.)

●Consideration on permissible dissipation and heat generation

As this IC functions with high efficiency without significant heat generation in most applications, no special consideration is

needed on permissible dissipation or heat generation. In case of extreme conditions, however, including lower input

voltage, higher output voltage, heavier load, and/or higher temperature, the permissible dissipation and/or heat generation

must be carefully considered.

For dissipation, only conduction losses due to DC resistance of inductor and ON resistance of FET are considered.

Because the conduction losses are considered to play the leading role among other dissipation mentioned above including

gate charge/discharge dissipation and switching dissipation.

1000

800

1.5

①mounted on glass epoxy PCB

θj-a=212.8℃/W

②Using an IC alone

θj-a=322.6℃/W

①mounted on glass epoxy PCB

θj-a=133.0℃/W

②Using an IC alone

θj-a=195.3℃/W

①for SON008V5060

ROHM standard 1layer board

θj-a=138.9℃/W

②Using an IC alone

θj-a=195.3℃/W

①1.15W

②0.63W

①0.90W

②0.64W

1.0

①587.4mW

②387.5mW

600

400

200

0

0.5

0

0.5

0

85

105

100

0

25

50

75 85 100

125

150

0

25

50

75

100

125

150

0

25

50

75

125

150

Ambient temperature:Ta [℃]

Fig.92 Thermal derating curve

(MSOP8)

Ambient temperature:Ta [℃]

Fig.93 Thermal derating curve

(HSON8)

Fig.94 Thermal derating curve

(SON008V5060)

2

P=IOUT ×(RCOIL+RON)

If VCC=5V, VOUT=3.3V, RCOIL=0.15ꢀ, RONP=0.35ꢀ, RONN=0.25ꢀ

IOUT=0.8A, for example,

RON=D×RONP+(1-D)×RONN

D=VOUT/VCC=3.3/5=0.66

RON=0.66×0.35+(1-0.66)×0.25

=0.231+0.085

D：ON duty (=VOUT/VCC)

RCOIL：DC resistance of coil

RONP：ON resistance of P-channel MOS FET

RONN：ON resistance of N-channel MOS FET

IOUT：Output current

=0.316[ꢀ]

P=0.8²×(0.15+0.316)

≒298[mV]

As RONP is greater than RONN in this IC, the dissipation increases as the ON duty becomes greater. With the

consideration on the dissipation as above, thermal design must be carried out with sufficient margin allowed.

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2009.05 - Rev.A

20/28

BD9106FVM,BD9107FVM,BD9109FVM,BD9110NV,BD9120HFN

Technical Note

●Selection of components externally connected

1. Selection of inductor (L)

The inductance significantly depends on output ripple current.

As seen in the equation (1), the ripple current decreases as the

inductor and/or switching frequency increases.

IL

ΔIL

(VCC-VOUT)×VOUT

VCC

ΔIL=

[A]・・・(1)

L×VCC×f

Appropriate ripple current at output should be 30% more or less of the

maximum output current.

IL

VOUT

ΔIL=0.3×IOUTmax. [A]・・・(2)

L

(VCC-VOUT)×VOUT

Co

L=

[H]・・・(3)

ΔIL×VCC×f

(ΔIL: Output ripple current, and f: Switching frequency)

Fig.95 Output ripple current

* Current exceeding the current rating of the inductor results in magnetic saturation of the inductor, which decreases efficiency.

The inductor must be selected allowing sufficient margin with which the peak current may not exceed its current rating.

If VCC=5V, VOUT=3.3V, f=1MHz, ΔIL=0.3×0.8A=0.24A, for example,(BD9109FVM)

(5-3.3)×3.3

L=

=4.675μ → 4.7[μH]

0.24×5×1M

* Select the inductor of low resistance component (such as DCR and ACR) to minimize dissipation in the inductor for

better efficiency.

2. Selection of output capacitor (CO)

VCC

Output capacitor should be selected with the consideration on the stability region

and the equivalent series resistance required to smooth ripple voltage.

Output ripple voltage is determined by the equation (4)：

V^OUT

ΔVOUT=ΔIL×ESR [V]・・・(4)

L

ESR

Co

(ΔIL: Output ripple current, ESR: Equivalent series resistance of output capacitor)

*Rating of the capacitor should be determined allowing sufficient margin

against output voltage. Less ESR allows reduction in output ripple voltage.

Fig.96 Output capacitor

As the output rise time must be designed to fall within the soft-start time, the capacitance of output capacitor should be

determined with consideration on the requirements of equation (5):

TSS×(Ilimit-IOUT)

Tss: Soft-start time

Ilimit: Over current detection level, 2A(Typ)

Co≦

・・・(5)

VOUT

In case of BD9109FVM, for instance, and if VOUT=3.3V, IOUT=0.8A, and TSS=1ms,

1m×(2-0.8)

Co≦

≒364 [μF]

3.3

Inappropriate capacitance may cause problem in startup. A 10 μF to 100 μF ceramic capacitor is recommended.

3. Selection of input capacitor (Cin)

Input capacitor to select must be a low ESR capacitor of the capacitance

sufficient to cope with high ripple current to prevent high transient voltage. The

ripple current IRMS is given by the equation (6):

VCC

Cin

√

VOUT(VCC-VOUT)

IRMS=IOUT×

[A]・・・(6)

V^OUT

VCC

L

Co

< Worst case > IRMS(max.)

IOUT

2

When VCC is twice the Vout, IRMS=

If VCC=5V, VOUT=3.3V, and IOUTmax.=0.8A, (BD9109FVM)

√

Fig.97 Input capacitor

3.3(5-3.3)

IRMS=0.8×

=0.38[ARMS]

5

A low ESR 10μF/10V ceramic capacitor is recommended to reduce ESR dissipation of input capacitor for better efficiency.

www.rohm.com

2009.05 - Rev.A

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BD9106FVM,BD9107FVM,BD9109FVM,BD9110NV,BD9120HFN

Technical Note

4. Determination of RITH, CITH that works as a phase compensator

As the Current Mode Control is designed to limit a inductor current, a pole (phase lag) appears in the low frequency

area due to a CR filter consisting of a output capacitor and a load resistance, while a zero (phase lead) appears in the

high frequency area due to the output capacitor and its ESR. So, the phases are easily compensated by adding a zero

to the power amplifier output with C and R as described below to cancel a pole at the power amplifier.

fp(Min.)

A

1

fp=

fp(Max.)

2π×RO×CO

Gain

[dB]

0

1

fz(ESR)

fz(ESR)=

2π×ESR×CO

IOUTMin.

I^OUTMax.

Pole at power amplifier

0

When the output current decreases, the load resistance Ro

increases and the pole frequency lowers.

Phase

[deg]

-90

1

fp(Min.)=

[Hz]←with lighter load

[Hz]←with heavier load

2π×ROMax.×CO

Fig.98 Open loop gain characteristics

1

fp(Max.)=

A

2π×ROMin.×CO

fz(Amp.)

Gain

[dB]

Zero at power amplifier

Increasing capacitance of the output capacitor lowers the pole

frequency while the zero frequency does not change. (This

is because when the capacitance is doubled, the capacitor

ESR reduces to half.)

0

Phase

[deg]

1

fz(Amp.)=

-90

2π×RITH.×CITH

Fig.99 Error amp phase compensation characteristics

Cin

L

V^CC

V^CC,PVCC

EN

SW

VOUT

RO

V^OUT

ITH

ESR

C^O

GND,PGND

R^ITH

C^ITH

Fig.100 Typical application

Stable feedback loop may be achieved by canceling the pole fp (Min.) produced by the output capacitor and the load

resistance with CR zero correction by the error amplifier.

fz(Amp.)= fp(Min.)

1

=

2π×RITH×CITH

2π×ROMax.×CO

5. Determination of output voltage

The output voltage VOUT is determined by the equation (7):

L

VOUT=(R2/R1+1)×VADJ・・・(7) VADJ: Voltage at ADJ terminal (0.8V Typ.)

With R1 and R2 adjusted, the output voltage may be determined as required.

Adjustable output voltage range： 1.0V～1.5V/ BD9107FVM, BD9120HFN

1.0V～2.5V/BD106FVM, BD9110NV

6

1

Output

SW

Co

R2

R1

Use 1 kꢀ～100 kꢀ resistor for R1. If a resistor of the resistance higher than

100 kꢀ is used, check the assembled set carefully for ripple voltage etc.

ADJ

Fig.101 Determination of output voltage

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2009.05 - Rev.A

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BD9106FVM,BD9107FVM,BD9109FVM,BD9110NV,BD9120HFN

Technical Note

●BD9106FVM, BD9107FVM, BD9109FVM, BD9120HFN Cautions on PC Board layout

VOUT/ADJ

ITH

VCC

PVCC

SW

1

2

3

4

8

7

6

5

VCC

RITH

CIN

①

L

EN

VOUT

CITH

CO

GND

PGND

GND

②

③

Fig.102 Layout diagram

●BD9110NV Cautions on PC Board layout

VCC

EN

R2

1

8

7

ADJ

EN

PVCC

SW

2

R1

VCC

ITH

L

①

3

4

6

5

VOUT

GND

RITH

③

CIN

Co

GND

PGND

②

CITH

Fig.103 Layout diagram

For the sections drawn with heavy line, use thick conductor pattern as short as possible.

①

②

Lay out the input ceramic capacitor CIN closer to the pins PVCC and PGND, and the output capacitor Co closer to

the pin PGND.

③

Lay out CITH and RITH between the pins ITH and GND as neat as possible with least necessary wiring.

※

The package of HSON8 (BD9120HFN) and SON008V5050 (BD9110NV) has thermal FIN on the reverse of the package.

The package thermal performance may be enhanced by bonding the FIN to GND plane which take a large area of PCB.

Table1. [BD9106FVM]

Symbol

Part

Value

Manufacturer

Sumida

TDK

Series

CMD6D11B

L

Coil

4.7μH

VLF5014AT-4R7M1R1

CM316X5R106K10A

GRM18series

Ceramic capacitor

CIN

CO

10μF

Kyocera

murata

ROHM

CITH

750pF

VOUT=1.0V

18kꢀ

22kꢀ

27kꢀ

36kꢀ

MCR10 1802

VOUT=1.2V

VOUT=1.5V

VOUT=1.8V

VOUT=2.5V

ROHM

MCR10 2202

RITH

Resistance

ROHM

MCR10 2202

ROHM

MCR10 2702

ROHM

MCR10 3602

www.rohm.com

2009.05 - Rev.A

23/28

BD9106FVM,BD9107FVM,BD9109FVM,BD9110NV,BD9120HFN

Technical Note

Table2. [BD9107FVM]

Symbol

Part

Value

Manufacturer

Sumida

TDK

Series

CMD6D11B

VLF5014AT-4R7M1R1

CM316X5R106K10A

GRM18series

L

Coil

4.7μH

Ceramic capacitor

CIN

CO

10μF

Kyocera

murata

ROHM

CITH

1000pF

VOUT=1.0V

4.3kꢀ

6.8kꢀ

9.1kꢀ

12kꢀ

MCR10 4301

VOUT=1.2V

VOUT=1.5V

VOUT=1.8V

ROHM

MCR10 6801

RITH

Resistance

ROHM

MCR10 9101

ROHM

MCR10 1202

Table3. [BD9109VM]

Symbol

Part

Value

Manufacturer

Sumida

TDK

Series

CMD6D11B

L

Coil

4.7μH

VLF5014AT-4R7M1R1

CM316X5R106K10A

GRM18series

Ceramic capacitor

Resistance

CIN

CO

10μF

330pF

30kꢀ

Kyocera

murata

CITH

RITH

ROHM

MCR10 3002

Table4. [BD9110NV]

Symbol

L

Part

Coil

Value

2.2μH

10μF

Manufacturer

TDK

Series

LTF5022T-2R2N3R2

CM316X5R106K10A

CM316B226K06A

GRM18series

CIN

CO

Ceramic capacitor

Kyocera

murata

22μF

CITH

1000pF

VOUT=1.0V

VOUT=1.2V

VOUT=1.5V

VOUT=1.8V

VOUT=2.5V

RITH

Resistance

12kꢀ

ROHM

MCR10 1202

Table5. [BD9120HFN]

Symbol

Part

Coil

Value

Manufacturer

Sumida

TDK

Series

CMD6D11B

L

4.7μH

VLF5014AT-4R7M1R1

CM316X5R106K10A

GRM18series

CIN

CO

Ceramic capacitor

10μF

Kyocera

murata

CITH

680pF

VOUT=1.0V

8.2kꢀ

4.7kꢀ

ROHM

MCR10 8201

RITH

Resistance

VOUT=1.2V

VOUT=1.5V

ROHM

MCR10 8201

ROHM

MCR10 4701

*The parts list presented above is an example of recommended parts. Although the parts are sound, actual circuit characteristics should be checked on

your application carefully before use. Be sure to allow sufficient margins to accommodate variations between external devices and this IC when employing

the depicted circuit with other circuit constants modified. Both static and transient characteristics should be considered in establishing these margins. When

switching noise is substantial and may impact the system, a low pass filter should be inserted between the VCC and PVCC pins, and a schottky barrier

diode established between the SW and PGND pins.

www.rohm.com

2009.05 - Rev.A

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BD9106FVM,BD9107FVM,BD9109FVM,BD9110NV,BD9120HFN

Technical Note

●I/O equivalence circuit

【BD9106FVM, BD9107FVM, BD9109FVM】

PVCC

・SW pin

・EN pin

VCC

10kΩ

SW

EN

・VOUT pin (BD9109FVM)

・ADJ pin (BD9106FVM, BD9107FVM)

VCC

10kΩ

V^OUT

ADJ

・ITH pin

VCC

ITH

【BD9110NV, BD9120HFN】

・EN pin

PVCC

・SW pin

10kΩ

EN

SW

・ITH pin (BD9120HFN)

・ITH pin (BD9110NV)

VCC

ITH

・ADJ pin

10kΩ

ADJ

Fig.104 I/O equivalence circuit

25/28

www.rohm.com

2009.05 - Rev.A

BD9106FVM,BD9107FVM,BD9109FVM,BD9110NV,BD9120HFN

Technical Note

●Notes for use

1. Absolute Maximum Ratings

While utmost care is taken to quality control of this product, any application that may exceed some of the absolute

maximum ratings including the voltage applied and the operating temperature range may result in breakage. If broken,

short-mode or open-mode may not be identified. So if it is expected to encounter with special mode that may exceed

the absolute maximum ratings, it is requested to take necessary safety measures physically including insertion of

fuses.

2. Electrical potential at GND

GND must be designed to have the lowest electrical potential In any operating conditions.

3. Short-circuiting between terminals, and mismounting

When mounting to pc board, care must be taken to avoid mistake in its orientation and alignment. Failure to do so may

result in IC breakdown. Short-circuiting due to foreign matters entered between output terminals, or between output

and power supply or GND may also cause breakdown.

4.Operation in Strong electromagnetic field}

Be noted that using the IC in the strong electromagnetic radiation can cause operation failures.

5. Thermal shutdown protection circuit

Thermal shutdown protection circuit is the circuit designed to isolate the IC from thermal runaway, and not intended to

protect and guarantee the IC. So, the IC the thermal shutdown protection circuit of which is once activated should not

be used thereafter for any operation originally intended.

6. Inspection with the IC set to a pc board

If a capacitor must be connected to the pin of lower impedance during inspection with the IC set to a pc board, the

capacitor must be discharged after each process to avoid stress to the IC. For electrostatic protection, provide proper

grounding to assembling processes with special care taken in handling and storage. When connecting to jigs in the

inspection process, be sure to turn OFF the power supply before it is connected and removed.

7. Input to IC terminals

This is a monolithic IC with P⁺isolation between P-substrate and each element as illustrated below. This P-layer and

the N-layer of each element form a P-N junction, and various parasitic element are formed.

If a resistor is joined to a transistor terminal as shown in Fig 59:

○P-N junction works as a parasitic diode if the following relationship is satisfied; GND>Terminal A (at resistor side), or

GND>Terminal B (at transistor side); and

○if GND>Terminal B (at NPN transistor side),

a parasitic NPN transistor is activated by N-layer of other element adjacent to the above-mentioned parasitic diode.

The structure of the IC inevitably forms parasitic elements, the activation of which may cause interference among

circuits, and/or malfunctions contributing to breakdown. It is therefore requested to take care not to use the device in

such manner that the voltage lower than GND (at P-substrate) may be applied to the input terminal, which may result in

(Pin A)

activation of parasitic elements.

Resistance

Transistor (NPN)

B

(Pin A)

(Pin B)

Parasitic diode

E

C

GND

N

P

N

(Pin B)

P+

P

N

P+

C

N

P substrate

N

B

E

Parasitic diode

GND

P substrate

GND

Parasitic diode or transistor

Fig.105 Simplified structure of monorisic IC

8. Ground wiring pattern

If small-signal GND and large-current GND are provided, It will be recommended to separate the large-current GND

pattern from the small-signal GND pattern and establish a single ground at the reference point of the set PCB so that

resistance to the wiring pattern and voltage fluctuations due to a large current will cause no fluctuations in voltages of

the small-signal GND. Pay attention not to cause fluctuations in the GND wiring pattern of external parts as well.

www.rohm.com

2009.05 - Rev.A

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BD9106FVM,BD9107FVM,BD9109FVM,BD9110NV,BD9120HFN

Technical Note

●Ordering part number

B

D

9

1

0

N

V

-

E

2

Part No.

BD

Part No.

Package

Packaging and forming specification

E2: Embossed tape and reel

(SON008V5060,)

9110

9120

9106 ,9107,9109

NV : SON008V5060

HFN:MSOP8

TR: Embossed tape and reel

(MSOP8, HSON8)

FVM:HSON8

MSOP8

2.9 0.1

(MAX 3.25 include BURR)

Tape

Embossed carrier tape

3000pcs

+

6°

4°

Quantity

−4°

8

7

6

5

TR

Direction

of feed

The direction is the 1pin of product is at the upper right when you hold

reel on the left hand and you pull out the tape on the right hand

(

)

1

2

3

4

1PIN MARK

+0.05

1pin

+0.05

0.145

–0.03

0.475

S

0.22

–0.04

0.08

S

Direction of feed

Order quantity needs to be multiple of the minimum quantity.

0.65

Reel

(Unit : mm)

∗

HSON8

2.9 0.1

(MAX 3.1 include BURR)

(0.05)

(2.2)

Tape

Embossed carrier tape

Quantity

3000pcs

0.475

8 7 6 5

TR

5 6 7 8

4 3 2 1

Direction

of feed

The direction is the 1pin of product is at the upper right when you hold

reel on the left hand and you pull out the tape on the right hand

(

)

+0.1

–0.05

0.13

1 2 3 4

1pin

1PIN MARK

S

0.1

S

0.65

0.32 0.1

M

0.08

Direction of feed

Order quantity needs to be multiple of the minimum quantity.

Reel

(Unit : mm)

∗

www.rohm.com

2009.05 - Rev.A

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BD9106FVM,BD9107FVM,BD9109FVM,BD9110NV,BD9120HFN

Technical Note

SON008V5060

5.0 0.15

Tape

Embossed carrier tape

2000pcs

Quantity

E2

Direction

of feed

The direction is the 1pin of product is at the upper left when you hold

reel on the left hand and you pull out the tape on the right hand

1PIN MARK

S

(

)

0.08

S

4.2 0.1

1.27

3 4

C0.25

1

2

+0.05

8

7

6

5

Direction of feed

1pin

0.4

-

0.04

0.59

Reel

Order quantity needs to be multiple of the minimum quantity.

(Unit : mm)

∗

www.rohm.com

2009.05 - Rev.A

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Notice

N o t e s

No copying or reproduction of this document, in part or in whole, is permitted without the

consent of ROHM Co.,Ltd.

The content speciﬁed herein is subject to change for improvement without notice.

The content speciﬁed herein is for the purpose of introducing ROHM's products (hereinafter

"Products"). If you wish to use any such Product, please be sure to refer to the speciﬁcations,

which can be obtained from ROHM upon request.

Examples of application circuits, circuit constants and any other information contained herein

illustrate the standard usage and operations of the Products. The peripheral conditions must

be taken into account when designing circuits for mass production.

Great care was taken in ensuring the accuracy of the information speciﬁed in this document.

However, should you incur any damage arising from any inaccuracy or misprint of such

information, ROHM shall bear no responsibility for such damage.

The technical information speciﬁed herein is intended only to show the typical functions of and

examples of application circuits for the Products. ROHM does not grant you, explicitly or

implicitly, any license to use or exercise intellectual property or other rights held by ROHM and

other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the

use of such technical information.

The Products speciﬁed in this document are intended to be used with general-use electronic

equipment or devices (such as audio visual equipment, ofﬁce-automation equipment, commu-

nication devices, electronic appliances and amusement devices).

The Products speciﬁed in this document are not designed to be radiation tolerant.

While ROHM always makes efforts to enhance the quality and reliability of its Products, a

Product may fail or malfunction for a variety of reasons.

Please be sure to implement in your equipment using the Products safety measures to guard

against the possibility of physical injury, ﬁre or any other damage caused in the event of the

failure of any Product, such as derating, redundancy, ﬁre control and fail-safe designs. ROHM

shall bear no responsibility whatsoever for your use of any Product outside of the prescribed

scope or not in accordance with the instruction manual.

The Products are not designed or manufactured to be used with any equipment, device or

system which requires an extremely high level of reliability the failure or malfunction of which

may result in a direct threat to human life or create a risk of human injury (such as a medical

instrument, transportation equipment, aerospace machinery, nuclear-reactor controller,

fuel-controller or other safety device). ROHM shall bear no responsibility in any way for use of

any of the Products for the above special purposes. If a Product is intended to be used for any

such special purpose, please contact a ROHM sales representative before purchasing.

If you intend to export or ship overseas any Product or technology speciﬁed herein that may

be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to

obtain a license or permit under the Law.

Thank you for your accessing to ROHM product informations.

More detail product informations and catalogs are available, please contact us.

ROHM Customer Support System

http://www.rohm.com/contact/

www.rohm.com

R0039

A


型号：	BD9109FVM-TR
厂家：	ROHM
描述：	Switching Regulator, Current-mode, 0.8A, 1200kHz Switching Freq-Max, PDSO8, MSOP-8 稳压器开关
文件：	总29页 (文件大小：655K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

BD9109FVM-TR [ROHM]

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