BD9211F-GE2 [ROHM]
Display Driver, PDSO18;型号: | BD9211F-GE2 |
厂家: | ROHM |
描述: | Display Driver, PDSO18 光电二极管 |
文件: | 总5页 (文件大小:183K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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STRUCTURE
Silicon Monolithic Integrated Circuit
NAME OF PRODUCT LED Driver control IC
TYPE
BD9211F
FEATURE
・
Using 20V high-voltage-withstand process
・ 1Channel Push-Pull control
・ Current and voltage feedback is controlled
by drive frequency modulation
・ Built-in soft start circuit
・ Built-in timer latch circuit
・ Built-in shut down protection
・ Built-in UVLO detection circuit
・ Output Over Voltage Protection
・ Built-in error signal output function
・ Switching to current consumption save mode through STB pin
・ Possible to control the burst by external PWM
○Absolute Maximum Ratings (Ta=25℃)
Item
Symbol
VCC
N1,N2
Topr
Rated voltage
20
Unit
V
Power supply voltage
Driver Output
20
V
Operating temperature
Storage temperature range
Maximum Junction Temperature
Power Dissipation
-40~+85
-55~+150
+150
℃
Tstg
℃
Tjmax
Pd
℃
687*
mW
* It reduces gradually by 5.5 mW/℃if above Ta= 25℃(when mounting the board of 70.0mm×70.0mm×1.6mm)
〇Recommended Operation Ranges
Item
Symbol
VCC
Range
8.0~18.0
60~500
25~200
Unit
V
Power Supply
PWMIN input frequency range
Output frequency
F_PWMIN
FOUT
Hz
kHz
REV. A
2/4
○Electrical Characteristics (VCC=12V, Ta=25℃)
Limits
TYP.
Parameter
Symbol
Unit
Conditions
MIN.
MAX.
((WHOLE DEVICE))
Circuit current during operation
Circuit current during stand by operation
((STAND BY CONTROL))
Stand-by voltage H
Icc1
Icc2
-
-
2.3
0
5.0
20
mA
FOUT=60kHz, PWMCMP=GND
VSTB=0V
μA
VstbH
VstbL
2.0
-
-
VCC
0.8
V
V
System ON
System OFF
Stand-by voltage L
-0.3
((VCC UVLO BLOCK))
Operating voltage (VCC)
Hesteresis width (VCC UVLO)
((OSC BLOCK))
V_VCCUVP
6.17
0.37
6.50
0.50
6.83
0.63
V
V
⊿V_VCCUVP
RT Output Voltage
VRT
1.05
1.50
1.95
V
RT=79 kΩ
((PWMIN BLOCK))
VPWMINH
VPWMINL
PWMIN pin H level input voltage range
PWMIN pin L level input voltage range
2.0
-
-
5.0
0.8
V
V
-0.3
((SOFT START BLOCK))
ISS
1.5
2.8
2.0
3.0
2.5
3.2
uA
V
Set up current for soft start
Soft start end voltage
((FEED BACK BLOCK))
IS threshold voltage
VSS_END
VIS
1.225
1.212
-
1.250
1.250
-
1.275
1.288
0.9
V
V
VS threshold voltage
VVS
IS source current 1
IIS1
μA
μA
μA
V
PWMIN=2.5V
IS source current 2
IIS2
40
50
60
PWMIN=0V, IS=1.0V
VS source current
IVS
-
-
0.9
IS COMP detect voltage
((OUTPUT BLOCK))
N1 output sink resistance
N1 output source resistance
N2 output sink resistance
N2 output source resistance
MAX DUTY
VISCOMP
0.606
0.625
0.644
Rsink_N1
1.5
4.5
3.0
9.0
6.0
18.0
6.0
Ω
Ω
Ω
Ω
%
Rsource_N1
Rsink_N2
1.5
3.0
Rsource_N2
MAX DUTY
4.5
9.0
18.0
47.0
43.0
45.0
FOUT=60kHz
N1-N2, N2-N1 OFF period
Drive output frequency
TOFF
FOUT
100
200
400
ns
57.9
60.0
62.1
kHz
RT=79 kΩ
((TIMER LATCH BLOCK)
CP timer latch detect voltage
CP timer latch charge current
SDON latch detect voltage
SDON latch charge current
((COMP BLOCK))
VCP
1.90
0.85
1.90
0.85
2.00
1.00
2.00
1.00
2.10
1.15
2.10
1.15
V
μA
V
ICP
VSDON
ISDON
μA
COMP over voltage detect voltage
Hysteresis width (COMP)
COMPSD over voltage detect voltage
((FAIL BLOCK))
VCOMP
3.88
0.15
3.88
4.00
0.20
4.00
4.12
0.25
4.12
V
V
V
⊿VCOMP
VCOMPSD
FAIL ON Resistor value
RFAILL
-
100
200
Ω
(This product is not designed to be radiation-resistant.)
REV. A
3/4
〇 External Dimensions
, Marking
Dvice Mark
BD9211F
Lot No.
SOP18 (Unit:mm)
〇 Block Diagram
○Pin Number, Pin Name, Pin Function
Pin
No
Pin
Pin
No
Pin
Functions
Functions
name
name
PWM signal input pin for burst bright adjustment
control
1
VCC
Power supply pin for IC (built-in UVLO function)
10
PWMIN
Enable pin of COMPSD inputs over voltage
detection
2
3
4
STB
GND
RT
Power ON/OFF control pin for IC
Signal/ground pin for internal IC
Drive frequency set up terminal.
11
12
13
SDON
SS
Soft-start set up pin
Error Indication signal Output Normal : L, Error :
OPEN
FAIL
FB
IS
Lamp current, lamp voltage, error amp outputs
Error amp input pin for lamp current feedback
14
15
COMPSD Detection pin for over voltage shut down
5
6
Detection pin for over voltage and shut-down delay
Power Ground for external MOSFET drive
COMP
PGND
Error amp input pin for lamp voltage feedback at
the opening time.
7
VS
16
PWM comparator input pin which controls PWM
operation during brightness adjustment.
8
9
PWMCMP
CP
17
18
N2
N1
Output pin for external FET drive circuit (Ch. N2)
Output pin for external FET drive circuit (Ch. N1)
Timer latch-setting pin
REV. A
4/4
〇NOTE FOR USE
1. When designing the external circuit, including adequate margins for variation between external devices and IC. Use adequate margins
for steady state and transient characteristics.
2. The circuit functionality is guaranteed within of ambient temperature operation range as long as it is within recommended operating
range. The standard electrical characteristic values cannot be guaranteed at other voltages in the operating ranges, however the
variation will be small.
3. Mounting failures, such as misdirection or miscounts, may harm the device.
4. A strong electromagnetic field may cause the IC to malfunction.
5. The GND pin should be the location within ±0.3V compared with the PGND pin.
6. If the voltage between VCC and I/O pins or GND and I/O pins is in opposite from the normal potential difference, unusual current flow
into pins may occur which can destroy the IC. To avoid such occurrence it is recommended to place protection diodes for prevention
against backward current flow.
7. BD9211F incorporate a built-in thermal shutdown circuit (TSD circuit). The thermal shutdown circuit (TSD circuit) is designed only to
shut the IC off to prevent runaway thermal operation. It is not designed to protect the IC or guarantee its operation of the thermal
shutdown circuit is assumed.
8. Absolute maximum ratings are those values that, if exceeded, may cause the life of a device to become significantly shortened.
Moreover, the exact failure mode caused by short or open is not defined. Physical countermeasures, such as a fuse, need to be
considered when using a device beyond its maximum ratings.
9. About the external FET, the parasitic Capacitor may cause the gate voltage to change, when the drain voltage is switching. Make sure
to leave adequate margin for this IC variation.
10.
By STB voltage, BD9211F are changed to 2 states. Therefore, do not input STB pin voltage between one state and the other state
(0.8~2.0V).
11.
The pin connected a connector need to connect to the resistor for electrical surge destruction.
12.This IC is a monolithic IC which (as shown is Fig.4)has P+ substrate and between the various pins. A P-N junction is formed from
this P layer of each pin. For example, the relation between each potential is as follows,
○(When GND > PinB and GND > PinA, the P-N junction operates as a parasitic diode.)
○(When PinB > GND > PinA, the P-N junction operates as a parasitic transistor.)
Parasitic diodes can occur inevitably in the structure of the IC. The operation of parasitic diodes can result in mutual interference
among circuits as well as operation faults and physical damage. Accordingly you must not use methods by which parasitic diodes
operate, such as applying a voltage that is lower than the GND (P substrate) voltage to an input pin
Transistor (NPN)
Resistance
B
C
(PinA)
E
(PinB)
GND
N
P
P
P
P
N
P
P
N
N
N
N
N
P substrate
P substrate
GND
GND
Parasitic diode
Parasitic diode
(PinB)
C
E
(PinA)
B
Parasitic diode
Parasitic
GND
GND
Other adjacent components
Fig.4. Simplified structure of a Bipolar IC
REV. A
Notice
N o t e s
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illustrate the standard usage and operations of the Products. The peripheral conditions must
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R1010
A
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