BD9A100MUV_技术文档

Datasheet

2.7V to 5.5V Input, 1A Integrated MOSFET

Single Synchronous Buck DC/DC Converter

BD9A100MUV

General Description

Key Specifications

BD9A100MUV is

a

synchronous buck switching



Input Voltage Range:

2.7V to 5.5V

0.8V to V_PVIN×0.7V

1A(Max)

regulator with built-in low on-resistance power MOSFETs.

It is capable of providing current up to 1A.The SLLM^TM

control provides excellent efficiency characteristics in

light-load conditions which make the product ideal for

equipment and devices that demand minimal standby

power consumption. The oscillating frequency is high at

1MHz using a small value of inductance. It is a current

mode control DC/DC converter and features high-speed

transient response. Phase compensation can also be set

easily.

Output Voltage Range:

Average Output Current:

Switching Frequency:

High-Side MOSFET On-Resistance: 60mΩ (Typ)

Low-Side MOSFET On-Resistance: 60mΩ (Typ)

1MHz(Typ)

Standby Current:

0μA (Typ)

Package

VQFN016V3030

W(Typ) x D(Typ) x H(Max)

3.00mm x 3.00mm x 1.00mm

Features



Synchronous Single DC/DC Converter.



SLLM^TM(Simple Light Load Mode) Control.

Over Current Protection.

Short Circuit Protection.

Thermal Shutdown Protection.

Under Voltage Lockout Protection.

Adjustable Soft start Function.

Power Good Output.

VQFN016V3030 Package (Backside Heat

Dissipation)

VQFN016V3030

Applications



Step-Down Power Supply for DSPs,

FPGAs, Microprocessors, etc.

Laptop PCs/ Tablet PCs/ Servers.

LCD TVs.

Storage Devices (HDDs/SSDs).

Printers, OA Equipment.

Entertainment Devices.

Distributed Power Supply, Secondary Power

Supply.



Typical Application Circuit

BD9A100MUV

PGD

VIN

PVIN

PGD

AVIN

BOOT

MODE

Enable

MODE

0.1µF

2.2µH

10µF

0.1µF

VOUT

SW

FB

EN

SS

ITH

22µF×2

R₁

R₂

PGND

AGND

R_ITH

C_ITH

C_SS

Figure 1. Application Circuit

〇Product structure : Silicon monolithic integrated circuit 〇This product has no designed protection against radioactive rays

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Pin Configuration

(TOP VIEW)

16

15

14

13

PVIN

1

2

3

4

12 SW

11 SW

10 SW

E-Pad

FIN

PGND

9

SS

5

6

7

8

Figure 2. Pin Configuration

Pin Descriptions

Pin No.

1, 2

Pin Name

Function

Power supply terminals for the switching regulator.

These terminals supply power to the output stage of the switching regulator.

Connecting a 10µF ceramic capacitor is recommended.

PVIN

3, 4

5

PGND

AGND

Ground terminals for the output stage of the switching regulator.

Ground terminal for the control circuit.

An inverting input node for the gm error amplifier.

6

FB

See page 23 for how to calculate the resistance of the output voltage setting.

An input terminal for the gm error amplifier output and the output switch current comparator.

Connect a frequency phase compensation component to this terminal.

See page 24 for how to calculate the resistance and capacitance for phase compensation.

Turning this terminal signal Low (0.2V or lower) forces the device to operate in the fixed

frequency PWM mode. Turning this terminal signal High (0.8V or higher) enables the SLLM

control and the mode is automatically switched between the SLLM control and fixed frequency

PWM mode.

Terminal for setting the soft start time. The rise time of the output voltage can be specified by

connecting a capacitor to this terminal. See page 23 for how to calculate the capacitance.

Switch nodes. These terminals are connected to the source of the high-side MOSFET and drain

of the low-side MOSFET. Connect a bootstrap capacitor of 0.1µF between these terminals and

BOOT terminals. In addition, connect an inductor of 2.2µH considering the direct current

superimposition characteristic.

7

ITH

8

9

MODE

SS

10, 11, 12

SW

Connect a bootstrap capacitor of 0.1µF between this terminal and SW terminals.

The voltage of this capacitor is the gate drive voltage of the high-side MOSFET.

A “Power Good” terminal, an open drain output. Use of pull up resistor is needed. See page 18

for how to specify the resistance. When the FB terminal voltage reaches within ±7% of 0.8V

(Typ), the internal Nch MOSFET turns off and the output turns High.

13

14

BOOT

PGD

Turning this terminal signal low (0.8V or lower) forces the device to enter the shutdown mode.

Turning this terminal signal high (2.0V or higher) enables the device. This terminal must be

terminated.

15

EN

Supplies power to the control circuit of the switching regulator.

Connecting a 0.1µF ceramic capacitor is recommended.

A backside heat dissipation pad. Connecting to the internal PCB ground plane by using multiple

vias provides excellent heat dissipation characteristics.

16

-

AVIN

E-Pad

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Block Diagram

AVIN

PVIN

16

1

2

Current

EN

FB

15

VREF

Comparator

Comp

gm Amplifier

gm Amp

BOOT

SW

R

S

Q

13

Current

Sense/

Protect

6

SLOPE

CLK

+

OSC

VOUT

10

11

12

AVIN

Driver

Logic

PVIN

SS

SOFT

START

9

7

UVLO

SCP

TSD

OVP

ITH

PGND

AGND

3

4

PGOOD

5

PGD ¹⁴

MODE

8

Figure 3. Block Diagram

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Description of Blocks

1. VREF

The VREF block generates the internal reference voltage.

2. UVLO

The UVLO block is for under voltage lockout protection. It will shut down the IC when the VIN falls to 2.45V (Typ) or lower.

The threshold voltage has a hysteresis of 100mV (Typ).

3. SCP

After the soft start is completed and when the feedback voltage of the output voltage has fallen below 0.4V (Typ) for

1msec (Typ), the SCP stops the operation for 16msec (Typ) and subsequently initiates restart.

4. OVP

Over voltage protection function (OVP) compares FB terminal voltage with the internal standard voltage VREF. When the

FB terminal voltage exceeds 0.88V (Typ) it turns MOSFET of output part MOSFET off. After output voltage drop it returns

with hysteresis.

5. TSD

The TSD block is for thermal protection. The thermal protection circuit shuts down the device when the internal

temperature of IC rises to 175C (Typ) or higher. Thermal protection circuit resets when the temperature falls. The circuit

has a hysteresis of 25°C (Typ).

6. SOFT START

The Soft Start circuit slows down the rise of output voltage during start-up and controls the current, which allows the

prevention of output voltage overshoot and inrush current. A built-in soft start function is provided and a soft start is

initiated in 1msec (Typ) when the SS terminal is open.

7. gm Amplifier

The gm Amplifier block compares the reference voltage with the feedback voltage of the output voltage. The error and

the ITH terminal voltage determine the switching duty. A soft start is applied at startup. The ITH terminal voltage is limited

by the internal slope voltage.

8. Current Comparator

The Current Comparator block compares the output ITH terminal voltage of the error amplifier and the slope block signal

to determine the switching duty. In the event of over current, the current that flows through the high-side MOSFET is

limited at each cycle of the switching frequency.

9. OSC

This block generates the oscillating frequency.

10.DRIVER LOGIC

This block is a DC/DC driver. A signal from current comparator is applied to drive the MOSFETs.

11.PGOOD

When the FB terminal voltage reaches 0.8V (Typ) within ±7%, the Nch MOSFET of the built-in open drain output turns off

and the output turns high.

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Absolute Maximum Ratings (Ta = 25°C)

Parameter

Symbol

Rating

Unit

Supply Voltage

V_PVIN,V_AVIN

V_EN

-0.3 to +7

-0.3 to +14

-0.3 to +7

-0.3 to V_PVIN+ 0.3

2.66

V

EN Voltage

MODE Voltage

V_MODE

V_PGD

V_BOOT

⊿V_BOOT

V_FB

V

PGD Voltage

V

Voltage from GND to BOOT

Voltage from SW to BOOT

FB Voltage

V

ITH Voltage

V_ITH

V

SW Voltage

V_SW

V

Allowable Power Dissipation^{(Note 1)}

Operating Temperature Range

Storage Temperature Range

Pd

W

°C

Topr

-40 to 85

Tstg

-55 to 150

(Note 1) When mounted on a 70mm x 70mm x 1.6mm 4-layer glass epoxy board (copper foil area: 70 mm x 70 mm)

Derate by 21.3mW when operating above 25C.

Caution: Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit

between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is operated over

the absolute maximum ratings.

Recommended Operating Conditions (Ta= -40°C to +85°C)

Parameter

Symbol

Min

Typ

Max

Unit

Supply Voltage

Output Current^{(Note 2)}

V_PVIN,V_AVIN

I_OUT

2.7

-

5.5

1

V

A

V

Output Voltage Range

V_RANGE

0.8

V_PVINx 0.7

(Note 2) Pd,ASO should not be exceeded.

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Electrical Characteristics (Unless otherwise specified Ta = 25°C, VAVIN = VPVIN = 5V, VEN = 5V)

Parameter

Symbol

Min

Typ

Max

Unit

Conditions

AVIN PIN

Standby Supply Current

Operating Supply Current

I_STB

I_CC

V_UVLO1

V_UVLO2

-

0

10

µA

EN= GND

I_OUT= 0mA

Non-switching

350

500

UVLO Detection Voltage

UVLO Release Voltage

ENABLE

2.35

2.45

2.55

2.7

V

V_INfalling

V_INrising

2.425

EN Input High Level Voltage

EN Input Low Level Voltage

EN Input Current

V_ENH

V_ENL

I_EN

2.0

AGND

-

V_AVIN

0.8

V

5

10

µA

EN= 5V

MODE

MODE Threshold Voltage

MODE Input Current

Reference Voltage, Error Amplifier

FB Terminal Voltage

V_MODEH

I_MODE

0.2

-

0.4

10

0.8

20

V

µA

MODE= 5V

V_FB

I_FB

0.792

-

0.8

0

0.808

1

V

FB Input Current

µA

ms

µA

FB= 0.8V

ITH Sink Current

I_THSI

I_THSO

T_SS

I_SS

10

20

1.0

1.8

40

FB= 0.9V

ITH Source Current

10

40

FB= 0.7V

Soft Start Time

0.5

0.9

2.0

3.6

With internal constant

Soft Start Current

SWITCHING FREQUENCY

Switching Frequency

POWER GOOD

F_OSC

800

1000

1200

kHz

Falling (Fault) Voltage

Rising (Good) Voltage

Rising (Fault) Voltage

Falling (Good) Voltage

PGD Output Leakage Current

Power Good ON Resistance

Power Good Low Level Voltage

SWITCH MOSFET

V_PGDFF

V_PGDRG

V_PGDRF

V_PGDFG

I_LKPGD

R_PGD

87

90

107

104

-

90

93

96

%

µA

Ω

OUTPUT voltage falling

OUTPUT voltage rising

OUTPUT voltage falling

PGD= 5V

110

107

0

113

110

5

-

100

0.1

200

0.2

P_GDVL

-

V

I_PGD= 1mA

High Side FET ON Resistance

Low Side FET ON Resistance

High Side Output Leakage Current

Low Side Output Leakage Current

SCP

R_ONH

R_ONL

R_ILH

R_ILL

-

60

0

120

10

mΩ

µA

BOOT – SW= 5V

Non-switching

0

10

µA

Short Circuit Protection Detection

Voltage

V_SCP

0.28

0.4

0.52

V

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Typical Performance Curves

800

700

600

500

400

300

200

100

5.0

4.5

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0.0

VIN = 5.5V

VIN = 2.7V

VIN = 5.5V

-40

-20

0

20

40

60

80

-40

-20

0

20

40

60

80

Temperature[°C]

Figure 5. Stand-by Current vs Temperature

Figure 4. Operating Current vs Temperature

1.20

1.15

1.10

1.05

1.00

0.95

0.90

0.85

0.80

0.808

0.806

0.804

0.802

0.800

0.798

0.796

0.794

0.792

VIN = 2.7V

VIN = 5.0V

-40

-20

0

20

40

60

80

-40

-20

0

20

40

60

80

Temperature[℃]

Figure 6. Switching Frequency vs Temperature

Figure 7. FB Voltage Reference vs Temperature

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Typical Performance Curves - continued

40

35

30

40

35

30

25

20

15

10

VIN = 5.0V

25

20

15

10

VIN = 2.7V

40

-40

-20

0

20

40

60

80

-40

-20

0

20

60

80

Temperature[℃]

Figure 8. ITH Sink Current vs Temperature

Figure 9. ITH Source Current vs Temperature

0.8

0.7

0.6

0.5

0.4

0.3

0.2

20

18

16

14

12

10

8

VIN = 5.0V

MODE = 5.0V

6

4

MODE = 2.7V

2

0

-40

-20

0

20

40

60

80

-40

-20

0

20

40

60

80

Temperature[℃]

Figure 10. Mode Threshold vs Temperature

Figure 11. Mode Input Current vs Temperature

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Typical Performance Curves - continued

2.0

3.0

2.5

2.0

1.5

1.0

0.5

Css = OPEN

VIN = 2.7V

1.5

VIN = 2.7V

VIN = 5.5V

1.0

VIN = 5.0V

0.5

0.0

-40

-20

0

20

40

60

80

-40

-20

0

20

40

60

80

Temperature[℃]

Figure 12. Soft Start Time vs Temperature

Figure 13. Soft Start Terminal Current vs Temperature

120

110

100

90

120

110

100

90

VIN = 2.7V

80

70

60

50

VIN = 3.3V

VIN = 5.0V

VIN = 3.3V

40

30

-40

-20

0

20

40

60

80

-40

-20

0

20

40

60

80

Temperature[℃]

Figure 14. High side FET ON-Resistance vs Temperature

Figure 15. Low side FET ON-Resistance vs Temperature

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Typical Performance Curves - continued

-6

14

13

12

11

10

9

VIN = 5.0V

-7

VIN = 5.0V

-8

Good

Fault

Good

-9

-10

-11

-12

-13

-14

Fault

8

7

6

-40

-20

0

20

40

60

80

-40

-20

0

20

40

60

80

Temperature[℃]

Figure 17. PGD Rising Voltage vs Temperature

Figure 16. PGD Falling Voltage vs Temperature

100

90

80

70

60

50

40

30

20

3.0

2.9

2.8

2.7

2.6

2.5

2.4

2.3

2.2

2.1

2.0

Release

VIN = 2.7V

VIN = 5.0V

Detect

-40

-20

0

20

40

60

80

-40

-20

0

20

40

60

80

Temperature[℃]

Figure 19. UVLO Threshold vs Temperature

Figure 18. PGD ON-Resistance vs Temperature

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Typical Performance Curves - continued

2.0

1.8

7.0

6.5

6.0

5.5

5.0

4.5

4.0

3.5

3.0

EN = 5.0V

UP

1.6

1.4

1.2

DOWN

1.0

0.8

-40

-20

0

20

40

60

80

-40

-20

0

20

40

60

80

Temperature[℃]

Figure 20. EN Threshold vs Temperature

Figure 21. EN Input Current vs Temperature

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Typical Performance Curves (Application)

100

90

80

70

60

50

40

30

20

10

0

100

MODE = H

90

80

70

60

50

MODE = L

40

30

20

VIN =3.3V

VOUT =1.8V

VIN =5.0V

VOUT =1.8V

10

0

0.001

0.01

0.1

Output_Current[A]

1

0.01

0.1

Output_Current[A]

1

Figure 23. Efficiency vs Load Current

Figure 22. Efficiency vs Load Current

(VIN=3.3V, VOUT=1.8V, L=2.2μH)

(VIN=5V, VOUT=1.8V, L=2.2μH)

80

60

180

135

90

100

VOUT =3.3V

VIN=5V

VOUT=1.8V

95

90

85

80

75

70

65

60

55

50

phase

40

20

45

VOUT =1.8V

VOUT =1.2V

0

gain

-20

-40

-60

-80

-45

-90

-135

-180

0

0.2

0.4

0.6

0.8

1

1K

10K

100K

1M

Output_Current[A]

Frequency[Hz]

Figure 24. Efficiency vs Load Current

Figure 25. Closed Loop Response

(VIN=5V, VOUT=1.8V, L=2.2μH, C_OUT=Ceramic 44μF)

(VIN = 5.0V, MODE = 5.0V, L=2.2μH)

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Typical Performance Curves (Application) - continued

VIN=5V/div

EN=5V/div

VIN=5V/div

EN=5V/div

Time=1ms/div

VOUT=1V/div

Time=1ms/div

VOUT=1V/div

SW=5V/div

Figure 27. Power Down (VIN = EN)

Figure 26. Power Up (VIN = EN)

VIN=5V/div

EN=5V/div

VIN=5V/div

EN=5V/div

Time=1ms/div

VOUT=1V/div

Time=1ms/div

VOUT=1V/div

SW=5V/div

Figure 28. Power Up (EN = 0V→5V)

Figure 29. Power Down (EN = 5V→0V)

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Typical Performance Curves (Application) - continued

VOUT=20mV/div

SW=2V/div

Time=1µs/div

SW=2V/div

Time=2ms/div

Figure 31. Output Ripple

(V_IN= 5V, VOUT = 1.8V, IOUT = 1A)

Figure 30. Output Ripple

(V_IN= 5V, VOUT = 1.8V, IOUT = 0A)

VIN=50mV/div

Time=20ms/div

Time=1µs/div

SW=2V/div

Figure 32. Input Ripple

(V_IN= 5V, VOUT = 1.8V, IOUT = 0A)

Figure 33. Input Ripple

(V_IN= 5V, VOUT = 1.8V, IOUT = 1A)

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Typical Performance Curves (Application) - continued

IL=1A/div

SW=2V/div

Time=1µs/div

SW=2V/div

Figure 35. Switching Waveform

Figure 34. Switching Waveform

(VIN = 5.0V, VOUT = 1.8V, IOUT = 1A, L=2.2µH)

(VIN = 3.3V, VOUT = 1.8V, IOUT = 1A, L=2.2µH)

IL=500mA/div

Time=10µs/div

SW=2V/div

SLLM^TMControl

Figure 36. Switching Waveform with SLLM^TM

(VIN = 3.3V, VOUT = 1.8V, IOUT = 30mA, L=2.2µH)

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Typical Performance Curves (Application) - continued

0.4

0.3

0.4

0.3

0.2

0.1

0

0.2

0.1

0.0

-0.1

-0.2

-0.1

-0.2

-0.3

-0.4

VOUT=1.8V

VIN=5.0V

VOUT=1.8V

-0.3

-0.4

2.5

3.0

3.5

4.0

4.5

5.0

5.5

0

0.2

0.4

Output Current [A]

Figure 38. Load Regulation vs Load Current

0.6

0.8

1

VIN Input Voltage[V]

Figure 37. Line Regulation vs Input Voltage

VOUT=50mV/div

Time=1ms/div

IOUT=0.5A/div

Figure 39. Load Transient Response IOUT=0A to 1A load step

(VIN=5V, VOUT=1.8V, COUT=Ceramic 44μF)

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1. Function Explanations

(1) DC/DC converter operation

BD9A100MUV is a synchronous rectifying step-down switching regulator that achieves faster transient response by

employing current mode PWM control system. It utilizes switching operation in PWM (Pulse Width Modulation) mode

for heavier load, while it utilizes SLLM (Simple Light Load Mode) control for lighter load to improve efficiency.

① SLLM^TMcontrol

② PWM control

Output current IOUT [A]

Figure 40. Efficiency (SLLM^TMcontrol and PWM control)

①SLLM^TMcontrol

②PWM control

VOUT =50mV/div

Time=5µs/div

SW=2V/div

Figure 41. SW Waveform (SLLM^TMcontrol)

(V_IN= 5.0V, VOUT = 1.8V, IOUT = 50mA)

Figure 42. SW Waveform (PWM control)

(V_IN= 5.0V, VOUT = 1.8V, IOUT = 1A)

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(2) Enable Control

The IC shutdown can be controlled by the voltage applied to the EN terminal. When VEN reaches 1.5V (Typ), the

internal circuit is activated and the IC starts up. To enable shutdown control with the EN terminal, the shutdown

interval (Low level interval of EN) must be set to 100µs or longer.

VEN

EN terminal

VENH

VENL

0

t

VOUT

Output setting voltage

0

t

Soft start 1 msec

(Typ)

Figure 43. Start Up and Down with Enable

(3) Power Good

When the output voltage reaches outside ±10% of the voltage setting, the open drain N-ch MOSFET internally

connected to the PGD terminal turns on and the PGD terminal is pulled down with an impedance of 100Ω (Typ). A

hysteresis of 3% applies to resetting. Connecting a pull up resistor (10kΩ to 100kΩ) is recommended.

+10%

+7%

VOUT

-7%

-10%

PGD

Figure 44. PGD Timing Chart

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2. Protection

The protective circuits are intended for prevention of damage caused by unexpected accidents. Do not use them

for continuous protective operation.

(1) Short Circuit Protection (SCP)

The short circuit protection block compares the FB terminal voltage with the internal reference voltage VREF. When

the FB terminal voltage has fallen below 0.4V (Typ) and remained there for 1msec (Typ), SCP stops the operation for

16msec (Typ) and subsequently initiates a restart.

Short Circuit

Protection

Short Circuit

Protection Operation

EN Terminal

FB Terminal

＜0.4V(Typ)

＞0.4V(Typ)

-

ON

OFF

2.0V or higher

0.8V or lower

Enabled

Disabled

Soft start

1msec (Typ)

V_OUT

SCP delay time

1msec (Typ)

SCP delay time

1msec (Typ)

0.8V

FB terminal

SCP threshold voltage:

0.4V(Typ)

SCP release

Upper

MOSFET gate

LOW

Lower

MOSFET gate

OCP

threshold

2.5A(Typ)

Coil current

(Output load

current)

Build-in IC

HICCUP

Delay signal

16msec (Typ)

SCP reset

Figure 45. Short Circuit Protection (SCP) timing chart

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(2) Under Voltage Lockout Protection (UVLO)

The Under Voltage Lockout Protection circuit monitors the AVIN terminal voltage.

The operation enters standby when the AVIN terminal voltage is 2.45V (Typ) or lower.

The operation starts when the AVIN terminal voltage is 2.55V (Typ) or higher.

V_IN

0V

UVLO OFF

hys

UVLO ON

V_OUT

Soft start

FB

terminal

Top MOSFET gate

Bottom MOSFET

gate

Normal operation

UVLO

Normal operation

Figure 46. UVLO Timing Chart

(3) Thermal Shutdown

When the chip temperature exceeds Tj = 175C, the DC/DC converter output is stopped. The thermal shutdown

circuit is intended for shutting down the IC from thermal runaway in an abnormal state with the temperature

exceeding Tjmax = 150C. It is not meant to protect or guarantee the soundness of the application. Do not use the

function of this circuit for application protection design.

(4) Over Current Protection

The Over Current Protection function operates by using the current mode control to limit the current that flows

through the high-side MOSFET at each cycle of the switching frequency. The designed over current limit value is 2.5A

(Typ).

(5) Over Voltage Protection (OVP)

Over voltage protection function (OVP) compares FB terminal voltage with internal standard voltage VREF and when

FB terminal voltage exceeds 0.88V (Typ) it turns MOSFET of output part MOSFET off. After output voltage drop it

returns with hysteresis.

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Application Example

R5

BD9A100MUV

PGD

VIN

C2

PVIN

AVIN

PGD

BOOT

SW

C8

MODE

EN

C4

Enable

VOUT

C10

L1

SS

ITH

C9

R7

R8

PGND

AGND

FB

R3

C6

C7

Figure 47. Application Circuit

Table 1. Recommended Component Values

Output Voltage

Reference

Designator

Description

1.1V

1.2V

7.5kΩ

100kΩ

10kΩ

1.5V

9.1kΩ

100kΩ

16kΩ

1.8V

9.1kΩ

100kΩ

30kΩ

3.3V

18kΩ

R3

R5

R7

R8

C2

C4

C6

C7

C8

C9

C10

L1

6.8kΩ

100kΩ

10kΩ

-

100kΩ

75kΩ

27kΩ

20kΩ

18kΩ

24kΩ

10μF

10V, X5R, 3216

0.1μF

2700pF

0.01μF

0.1μF

22μF

0.1μF

2700pF

0.01μF

0.1μF

22μF

0.1μF

2700pF

0.01μF

0.1μF

22μF

0.1μF

2700pF

0.01μF

0.1μF

22μF

0.1μF

2700pF

0.01μF

0.1μF

22μF

25V, X5R, 1608

-

10V, X5R, 3225

TOKO, FDSD0630

22μF

2.2μH

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Selection of Components Externally Connected

1.

Output LC Filter Constant

The DC/DC converter requires an LC filter for smoothing the output voltage in order to supply a continuous current to the

load. BD9A100MUV is returned to the IC and IL ripple current flowing through the inductor for SLLM^TMcontrol. This

feedback current, Inductance value is the behavior of the best when the 2.2µH. Therefore, the inductor to use is

recommended 2.2µH.

PVIN

IL

Inductor saturation current > I_OUTMAX+⊿I_L/2

L

VOUT

Driver

IOUTMAX

⊿I_L

C_OUT

Average inductor current

t

Figure 48. Waveform of current through inductor

Figure 49. Output LC filter circuit

Computation with VIN = 5V, VOUT = 1.8V, L=2.2µH, and the switching frequency F_OSC= 1MHz, the method is as below.

Inductor ripple current ∆IL

1

[ ]

= 523.6 mA

ΔI _L= V_OUT× (V_IN-V_OUT) ×

V_IN× F_OSC× L

The saturation current of the inductor must be larger than the sum of the maximum output current and 1/2 of the inductor

ripple current ∆IL.

The output capacitor C_OUTaffects the output ripple voltage characteristics. The output capacitor COUT must satisfy the

required ripple voltage characteristics.

The output ripple voltage can be represented by the following equation.

1

[ ]

) V

ΔV_RPL= ΔI_L× (R_ESR

+

8 × C_OUT× F_OSC

R_ESRis the Equivalent Series Resistance (ESR) of the output capacitor.

With COUT = 44µF, RESR = 10mΩ the output ripple voltage is calculated as

1

[ ]

) = 6.724 mV

ΔV_RPL= 0.5236× (10m+

(8 × 44μ × 1MHz)

*Be careful of total capacitance value, when additional capacitor CLOAD is connected in addition to output capacitor COUT.

Use maximum additional capacitor CLOAD(max.) condition which satisfies the following method.

Maximumstarting inductor ripple current IL_START< Over Current limit 1.5A(min)

Maximum starting inductor ripple current ILSTART can be expressed in the following method.

ΔI_L

IL_START= Maximum starting output current(I_OMAX) + Charge current to output capacitor(I_CAP) +

2

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Charge current to output capacitor I_CAPcan be expressed in the following method.

(C_OUT+C_LOAD) ×V_OUT

T_SS

[ ]

A

I_CAP

=

Computation with V_IN= 5V, V_OUT= 3.3V, L = 2.2µH, switching frequency F_OSC= 800kHz (min.), Output capacitor C_OUT

44µF, Soft Start time T_SS= 0.5ms (min.), load current during soft start I_OSS= 0.6A the method is as below.

=

(1.5 - I_OSS- ΔI /2)×T_SS

L

[ ]

- C_OUT=44 μF

C_LOAD(max)<

V_OUT

If the value of C_LOADis large, and cannot meet the above equation,

(1.5 - I_OSS- ΔI_L/2) ×V_FB

C_LOAD(max) <

× C_SS- C_OUT

V_OUT× I_SS

Adjust the value of the capacitor C_SSto meet the above formula.

(Refer to the following items (3) Soft Start Setting equation of time T_SSand soft-start value of the capacitor to be connected

to the C_SS.)

Computation with V_IN= 5V, V_OUT= 3.3V, L = 2.2µH, load current during soft start I_OSS= 0.6A, switching frequency F_OSC

=

800kHz (min.), Output capacitor C_OUT= 44µF, V_FB= 0.792V(max.), I_SS= 3.6µA(max.), A capacitor connected to the C_SSif

you want to connect the C_LOAD= 220µF is the following equation.

V_OUT× I_SS

[ ]

× (C _LOAD+C_OUT) = 6.8 nF

C_SS

>

(1.5 - I_OSS- ΔI _L/2)×V_FB

2.

Output Voltage Setting

The output voltage value can be set by the feedback resistance ratio.

V_OUT

R1

R2

gm Amp

FB

－

R1 + R2

R2

[ ]

× 0.8 V

VOUT =

＋

0.8V

Figure 50. Feedback Resistor Circuit

Soft Start Setting

3.

Turning the EN terminal signal high activates the soft start function. This causes the output voltage to rise gradually while

the current at startup is placed under control. This allows the prevention of output voltage overshoot and inrush current.

The rise time depends on the value of the capacitor connected to the SS terminal.

T_SS= (C_SS×V_FB)/I_SS

T_SS: Soft Start Time

C_SS: Capacitorconnectedto Soft Start TimeTerminal

V_FB: FB TerminalVoltage(0.8V (Typ))

I_SS: Soft Start TerminalSource Current (1.8μA(Typ))

withC_SS= 0.01μF,

[ ] [ ]

[ ]

T_SS= (0.010 μF × 0.8 V )/1.8 μA

[

]

= 4.44 msec

Turning the EN terminal signal high with the SS terminal open (no capacitor connected) or with the terminal signal high

causes the output voltage to rise in 1msec (Typ).

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4.

Phase Compensation Component

A current mode control buck DC/DC converter is a two-pole, one-zero system. Two poles are formed by an error amplifier

and load and the one zero point is added by phase compensation. The phase compensation resistor R_ITHdetermines the

crossover frequency F_CRSwhere the total loop gain of the DC/DC converter is 0dB. A high value crossover frequency F_CRS

provides a good load transient response characteristic but inferior stability. Conversely, a low value crossover frequency

F_CRSgreatly stabilizes the characteristics but the load transient response characteristic is impaired.

(1) Selection of Phase Compensation Resistor R_ITH

The Phase Compensation Resistance R_ITHcan be determined by using the following equation.

2π ×V_OUT× F_CRS× C_OUT

[ ]

Ω

R_ITH

=

V_FB×G _MP×G_MA

ꢀV_OUT: Output Voltage[Vꢀ]

ꢀF _CRS: Crossover Frequency[Hz]

ꢀC_OUT: Output Capacitance[F]

ꢀV_FB: FeedbackReference Voltage(0.8V (Typ))

ꢀG_MP: Current Sense Gain(13A/V (Typ))

ꢀG_MA: Error AmplifierTrans conductance (260μA /V(Typ))

(2) Selection of Phase Compensation Capacitance C_ITH

For stable operation of the DC/DC converter, zero for compensation cancels the phase delay due to the pole formed

by the load.

The phase compensation capacitance C_ITHcan be determined by using the following equation.

C_OUT×V_OUT

R_ITH× I_OUT

[ ]

F

C_ITH

=

(3) Loop stability

To ensure the stability of the DC/DC converter, make sure that a sufficient phase margin is provided. A phase margin

of at least 45º in the worst conditions is recommended.

VOUT

(a)

A

Gain [dB]

RUP

GBW(b)

FB

ITH

－

＋

0

f

FCRS

RDW

Phase[deg]

0

RITH

CITH

0.8V

－90°

－90

PHASE MARGIN

－180°

－180

Figure 51. Phase Compensation Circuit

Figure 52. Bode Plot

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PCB Layout Design

In the buck DC/DC converter, a large pulse current flows into two loops. The first loop is the one into which the current flows

when the high-side FET is turned on. The flow starts from the input capacitor C_IN, runs through the FET, inductor L and

output capacitor C_OUTand back to GND of C_INvia GND of C_OUT. The second loop is the one into which the current flows

when the low-side FET is turned on. The flow starts from the low-side FET, runs through the inductor L and output capacitor

C_OUTand back to GND of the low-side FET via GND of C_OUT. Route these two loops as thick and as short as possible to

allow noise to be reduced for improved efficiency. It is recommended to connect the input and output capacitors directly to

the GND plane. The PCB layout has a great influence on the DC/DC converter in terms of all of the heat generation, noise

and efficiency characteristics.

V_IN

V_OUT

L

MOS FET

C_IN

C_OUT

Figure 53. Current Loop of Buck DC/DC Converter

Accordingly, design the PCB layout considering the following points.



Connect an input capacitor as close as possible to the IC PVIN terminal on the same plane as the IC.

If there is any unused area on the PCB, provide a copper foil plane for the GND node to assist heat dissipation from

the IC and the surrounding components.



Switching nodes such as SW are susceptible to noise due to AC coupling with other nodes. Route the coil pattern as

thick and as short as possible.



Provide lines connected to FB and ITH far from the SW nodes.

Place the output capacitor away from the input capacitor in order to avoid the effect of harmonic noise from the input.

EN

CIN

VIN

L

VOUT

GND

COUT

Top Layer

Bottom Layer

Figure 54. Example of evaluation board layout

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Power Dissipation

When designing the PCB layout and peripheral circuitry, sufficient consideration must be given to ensure that the power

dissipation is within the allowable dissipation curve.

This package incorporates an exposed thermal pad. Solder directly to the PCB ground plane. After soldering, the PCB can

be used as a heatsink.

The exposed thermal pad dimensions for this package are shown in page 31.

4.0

(1)4-layer board (surface heat dissipation copper foil 5505mm2)

(copper foil laminated on each layer)



_JA=47.0°C/W

3.0

2.0

(2) 4-layer board (surface heat dissipation copper foil 6.28mm²)

(copper foil laminated on each layer)

①2.66W

②1.77W



_JA=70.62°C/W

(3) 1-layer board (surface heat dissipation copper foil 6.28mm²)

_JA=201.6°C/W

(4) IC only



_JA=462.9°C/W

1.0

0

③0.62W

④0.27W

0

25

50

7585 100

125

150

Ambient temperature: Ta [°C]]

Figure 55. Thermal Derating Characteristics

(VQFN016V3030)

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I/O equivalence circuit(s)

6. FB

7. ITH

AVIN

20kΩ

FB

40Ω

ITH

AGND

8. MODE

9. SS

20kΩ

AVIN

MODE

SS

AGND

10Ω

10kΩ

1kΩ

100kΩ

AGND

500kΩ

AGND

10.11.12. SW13. BOOT

14. PGD

PVIN

BOOT

PVIN

PGD

60Ω

SW

AGND

PVIN

AGND

PGND

15. EN

EN

430kΩ

10kΩ

AGND

570kΩ

AGND

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Operational Notes

1.

2.

Reverse Connection of Power Supply

Connecting the power supply in reverse polarity can damage the IC. Take precautions against reverse polarity when

connecting the power supply, such as mounting an external diode between the power supply and the IC’s power

supply pins.

Power Supply Lines

Design the PCB layout pattern to provide low impedance supply lines. Separate the ground and supply lines of the

digital and analog blocks to prevent noise in the ground and supply lines of the digital block from affecting the analog

block. Furthermore, connect a capacitor to ground at all power supply pins. Consider the effect of temperature and

aging on the capacitance value when using electrolytic capacitors.

3.

4.

Ground Voltage

Ensure that no pins are at a voltage below that of the ground pin at any time, even during transient condition.

OR

Ground Wiring Pattern

When using both small-signal and large-current ground traces, the two ground traces should be routed separately but

connected to a single ground at the reference point of the application board to avoid fluctuations in the small-signal

ground caused by large currents. Also ensure that the ground traces of external components do not cause variations

on the ground voltage. The ground lines must be as short and thick as possible to reduce line impedance.

5.

Thermal Consideration

Should by any chance the power dissipation rating be exceeded the rise in temperature of the chip may result in

deterioration of the properties of the chip. The absolute maximum rating of the Pd stated in this specification is when

the IC is mounted on a 70mm x 70mm x 1.6mm 4-layer glass epoxy board. In case of exceeding this absolute

maximum rating increase the board size and copper area to prevent exceeding the Pd rating.

6.

7.

Recommended Operating Conditions

These conditions represent a range within which the expected characteristics of the IC can be approximately obtained.

The electrical characteristics are guaranteed under the conditions of each parameter.

Inrush Current

When power is first supplied to the IC, it is possible that the internal logic may be unstable and inrush

current may flow instantaneously due to the internal powering sequence and delays, especially if the IC

has more than one power supply. Therefore, give special consideration to power coupling capacitance,

power wiring, width of ground wiring, and routing of connections.

8.

9.

Operation Under Strong Electromagnetic Field

Operating the IC in the presence of a strong electromagnetic field may cause the IC to malfunction.

Testing on Application Boards

When testing the IC on an application board, connecting a capacitor directly to a low-impedance output pin may

subject the IC to stress. Always discharge capacitors completely after each process or step. The IC’s power supply

should always be turned off completely before connecting or removing it from the test setup during the inspection

process. To prevent damage from static discharge, ground the IC during assembly and use similar precautions during

transport and storage.

10. Inter-pin Short and Mounting Errors

Ensure that the direction and position are correct when mounting the IC on the PCB. Incorrect mounting may result in

damaging the IC. Avoid nearby pins being shorted to each other especially to ground, power supply and output pin.

Inter-pin shorts could be due to many reasons such as metal particles, water droplets (in very humid environment) and

unintentional solder bridge deposited in between pins during assembly to name a few.

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Operational Notes – continued

11. Unused Input Pins

Input pins of an IC are often connected to the gate of a MOS transistor. The gate has extremely high impedance and

extremely low capacitance. If left unconnected, the electric field from the outside can easily charge it. The small

charge acquired in this way is enough to produce a significant effect on the conduction through the transistor and

cause unexpected operation of the IC. So unless otherwise specified, unused input pins should be connected to the

power supply or ground line.

12. Regarding the Input Pin of the IC

This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them

isolated. P-N junctions are formed at the intersection of the P layers with the N layers of other elements, creating a

parasitic diode or transistor. For example (refer to figure below):

When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.

When GND > Pin B, the P-N junction operates as a parasitic transistor.

Parasitic diodes inevitably occur in the structure of the IC. The operation of parasitic diodes can result in mutual

interference among circuits, operational faults, or physical damage. Therefore, conditions that cause these diodes to

operate, such as applying a voltage lower than the GND voltage to an input pin (and thus to the P substrate) should

be avoided.

Resistor

Transistor (NPN)

Pin A

Pin B

B

E

C

Pin A

B

C

E

P

P⁺

N

P⁺

P

P⁺

N

Parasitic

Elements

Parasitic

Elements

P Substrate

GND GND

P Substrate

GND

Parasitic

Elements

Parasitic

Elements

N Region

close-by

Figure 56. Example of monolithic IC structure

13. Ceramic Capacitor

When using a ceramic capacitor, determine the dielectric constant considering the change of capacitance with

temperature and the decrease in nominal capacitance due to DC bias and others.

14. Area of Safe Operation (ASO)

Operate the IC such that the output voltage, output current, and power dissipation are all within the Area of Safe

Operation (ASO).

15. Thermal Shutdown Circuit(TSD)

This IC has a built-in thermal shutdown circuit that prevents heat damage to the IC. Normal operation should always

be within the IC’s power dissipation rating. If however the rating is exceeded for a continued period, the junction

temperature (Tj) will rise which will activate the TSD circuit that will turn OFF all output pins. When the Tj falls below

the TSD threshold, the circuits are automatically restored to normal operation.

Note that the TSD circuit operates in a situation that exceeds the absolute maximum ratings and therefore, under no

circumstances, should the TSD circuit be used in a set design or for any purpose other than protecting the IC from

heat damage.

16. Over Current Protection Circuit (OCP)

This IC incorporates an integrated overcurrent protection circuit that is activated when the load is shorted. This

protection circuit is effective in preventing damage due to sudden and unexpected incidents. However, the IC should

not be used in applications characterized by continuous operation or transitioning of the protection circuit.

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Ordering Information

B D 9 A 1

0

0 M U V -

E 2

Part Number

Package

VQFN016V3030

Packaging and forming specification

E2: Embossed tape and reel

Marking Diagrams

VQFN016V3030 (TOP VIEW)

Part Number Marking

D 9 A

1 0 0

LOT Number

1PIN MARK

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Physical Dimension, Tape and Reel Information

Package Name

VQFN016V3030

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Revision History

Date

Revision

Changes

13.Sep.2013

1.May.2014

20.Jul.2017

001

002

003

new

Modified Calculating formula of Components Externally Connected

Modified EN electrical Characteristics

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Notice

Precaution on using ROHM Products

1. Our Products are designed and manufactured for application in ordinary electronic equipments (such as AV equipment,

OA equipment, telecommunication equipment, home electronic appliances, amusement equipment, etc.). If you

intend to use our Products in devices requiring extremely high reliability (such as medical equipment ^{(Note 1)}, transport

equipment, traffic equipment, aircraft/spacecraft, nuclear power controllers, fuel controllers, car equipment including car

accessories, safety devices, etc.) and whose malfunction or failure may cause loss of human life, bodily injury or

serious damage to property (“Specific Applications”), please consult with the ROHM sales representative in advance.

Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way responsible or liable for any

damages, expenses or losses incurred by you or third parties arising from the use of any ROHM’s Products for Specific

Applications.

(Note1) Medical Equipment Classification of the Specific Applications

JAPAN

USA

EU

CHINA

CLASSⅢ

CLASSⅣ

CLASSⅡb

CLASSⅢ

2. ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor

products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate

safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which

a failure or malfunction of our Products may cause. The following are examples of safety measures:

[a] Installation of protection circuits or other protective devices to improve system safety

[b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure

3. Our Products are designed and manufactured for use under standard conditions and not under any special or

extraordinary environments or conditions, as exemplified below. Accordingly, ROHM shall not be in any way

responsible or liable for any damages, expenses or losses arising from the use of any ROHM’s Products under any

special or extraordinary environments or conditions. If you intend to use our Products under any special or

extraordinary environments or conditions (as exemplified below), your independent verification and confirmation of

product performance, reliability, etc, prior to use, must be necessary:

[a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents

[b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust

[c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2,

H2S, NH3, SO2, and NO2

[d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves

[e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items

[f] Sealing or coating our Products with resin or other coating materials

[g] Use of our Products without cleaning residue of flux (even if you use no-clean type fluxes, cleaning residue of

flux is recommended); or Washing our Products by using water or water-soluble cleaning agents for cleaning

residue after soldering

[h] Use of the Products in places subject to dew condensation

4. The Products are not subject to radiation-proof design.

5. Please verify and confirm characteristics of the final or mounted products in using the Products.

6. In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse. is applied,

confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power

exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect

product performance and reliability.

7. De-rate Power Dissipation depending on ambient temperature. When used in sealed area, confirm that it is the use in

the range that does not exceed the maximum junction temperature.

8. Confirm that operation temperature is within the specified range described in the product specification.

9. ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in

this document.

Precaution for Mounting / Circuit board design

1. When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product

performance and reliability.

2. In principle, the reflow soldering method must be used on a surface-mount products, the flow soldering method must

be used on a through hole mount products. If the flow soldering method is preferred on a surface-mount products,

please consult with the ROHM representative in advance.

For details, please refer to ROHM Mounting specification

Notice-PGA-E

Rev.003

Precautions Regarding Application Examples and External Circuits

1. If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the

characteristics of the Products and external components, including transient characteristics, as well as static

characteristics.

2. You agree that application notes, reference designs, and associated data and information contained in this document

are presented only as guidance for Products use. Therefore, in case you use such information, you are solely

responsible for it and you must exercise your own independent verification and judgment in the use of such information

contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses

incurred by you or third parties arising from the use of such information.

Precaution for Electrostatic

This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper

caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be

applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron,

isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).

Precaution for Storage / Transportation

1. Product performance and soldered connections may deteriorate if the Products are stored in the places where:

[a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2

[b] the temperature or humidity exceeds those recommended by ROHM

[c] the Products are exposed to direct sunshine or condensation

[d] the Products are exposed to high Electrostatic

2. Even under ROHM recommended storage condition, solderability of products out of recommended storage time period

may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is

exceeding the recommended storage time period.

3. Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads

may occur due to excessive stress applied when dropping of a carton.

4. Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of

which storage time is exceeding the recommended storage time period.

Precaution for Product Label

A two-dimensional barcode printed on ROHM Products label is for ROHM’s internal use only.

Precaution for Disposition

When disposing Products please dispose them properly using an authorized industry waste company.

Precaution for Foreign Exchange and Foreign Trade act

Since concerned goods might be fallen under listed items of export control prescribed by Foreign exchange and Foreign

trade act, please consult with ROHM in case of export.

Precaution Regarding Intellectual Property Rights

1. All information and data including but not limited to application example contained in this document is for reference

only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any

other rights of any third party regarding such information or data.

2. ROHM shall not have any obligations where the claims, actions or demands arising from the combination of the

Products with other articles such as components, circuits, systems or external equipment (including software).

3. No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any

third parties with respect to the Products or the information contained in this document. Provided, however, that ROHM

will not assert its intellectual property rights or other rights against you or your customers to the extent necessary to

manufacture or sell products containing the Products, subject to the terms and conditions herein.

Other Precaution

1. This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM.

2. The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written

consent of ROHM.

3. In no event shall you use in any way whatsoever the Products and the related technical information contained in the

Products or this document for any military purposes, including but not limited to, the development of mass-destruction

weapons.

4. The proper names of companies or products described in this document are trademarks or registered trademarks of

ROHM, its affiliated companies or third parties.

Notice-PGA-E

Rev.003


型号：	BD9A100MUV
厂家：	ROHM
描述：	BD9A100MUV是内置低导通电阻的功率MOSFET的同步整流降压型开关稳压器。最大可输出1A的电流。凭借SLLM™控制，实现轻负载状态的良好效率特性，适用于要降低待机功耗的设备。振荡频率1MHz的高速产品，适用于小型电感。是电流模式控制DC/DC转换器，具有高速瞬态响应性能，可轻松设定相位补偿。开关转换器稳压器
文件：	总35页 (文件大小：2906K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

BD9A100MUV [ROHM]

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