BD9D322QWZ [ROHM]
BD9D322QWZ是内置低导通电阻的功率MOSFET的同步整流降压型DC/DC转换器。最大可输出3A的电流。采用轻负载时进行低功耗工作的独创恒定时间控制方式，适用于要降低待机功耗的设备。还是恒定时间控制DC/DC转换器，具有高速负载响应性能，无需外接的相位补偿电路。;
| 型号： | BD9D322QWZ |
| 厂家： | 
ROHM |
| 描述： | BD9D322QWZ是内置低导通电阻的功率MOSFET的同步整流降压型DC/DC转换器。最大可输出3A的电流。采用轻负载时进行低功耗工作的独创恒定时间控制方式，适用于要降低待机功耗的设备。还是恒定时间控制DC/DC转换器，具有高速负载响应性能，无需外接的相位补偿电路。 转换器 |
| 文件： | 总39页 (文件大小：3851K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Datasheet
4.5V to 18V Input, 3.0A Integrated MOSFET
Single Synchronous Buck DC/DC Converter
BD9D322QWZ
General Description
Key Specifications
BD9D322QWZ is a synchronous buck DC/DC convertor
with built-in low on-resistance power MOSFETs. This IC
is capable of providing current up to 3A. The SLLMTM
control provides excellent efficiency characteristics in
light-load conditions which make the product ideal for
equipment and devices that demand minimal standby
power consumption. External phase compensation circuit
is not necessary for it is a constant ON-Time control
DC/DC converter with fast transient response.
Input Voltage Range:
Output Voltage Range:
4.5V to 18.0V
0.765V to 7V
(VIN x 0.07)V to (VIN x 0.65)V
Output Current: 3A (Max)
Switching Frequency:
High-Side MOSFET ON-Resistance: 80mΩ (Typ)
Low-Side MOSFET ON-Resistance: 50mΩ (Typ)
Standby Current:
700kHz (Typ)
2μA (Typ)
Package
UMMP008Z2020
W(Typ) x D(Typ) x H(Max)
2.00mm x 2.00mm x 0.40mm
Features
Single Synchronous DC/DC Converter
Constant ON-Time Control
SLLMTM (Simple Light Load Mode) Control
Over Current Protection
Thermal Shutdown Protection
Under Voltage Lockout Protection
Adjustable Soft Start
UMMP008Z2020 Package
(Backside Heat Dissipation)
Applications
Step-down Power Supply for DSPs, FPGAs,
Microprocessors, etc.
Set-top Box
LCD TVs
DVD / Blu-ray Player / Recorder
POL Power Supply, etc.
UMMP008Z2020
Typical Application Circuit
BD9D322QWZ
VIN
VIN
EN
BOOT
CBOOT
CIN
Enable
SW
FB
VOUT
L
GND
R2
CFB
VREG
SS
COUT
R1
CVREG
CSS
Figure 1. Typical Application Circuit
○Product structure: Silicon monolithic integrated circuit ○This product has no designed protection against radioactive rays.
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Pin Configuration
(TOP VIEW)
1
2
3
4
VIN
BOOT
SW
EN
8
7
6
5
VREG
FB
SS
GND
E-PAD
Figure 2. Pin Configuration
Pin Descriptions
Terminal
Symbol
Function
Power supply terminal for the switching regulator.
No.
1
VIN
Connecting 10µF and 0.1µF ceramic capacitors to ground are recommended.
Terminal for bootstrap.
2
3
BOOT
Connect a bootstrap capacitor of 0.1µF between this terminal and SW terminal.
The voltage of the bootstrap capacitor is the gate drive voltage of the High-Side MOSFET.
Switch terminal. The SW terminal is connected to the source of the High-Side MOSFET and
drain of the Low-Side MOSFET. Connect a bootstrap capacitor of 0.1µF between the SW
terminal and BOOT terminal. In addition, connect an inductor considering the direct current
superimposition characteristic.
SW
4
5
6
7
GND
SS
Ground terminal for the output stage of the switching regulator and the control circuit.
Terminal for setting the soft start time. The rise time of the output voltage can be specified by
connecting a capacitor to this terminal. Refer to page 29 for how to calculate the capacitance.
An inverting input terminal for comparator which compares with reference voltage (VREF).
Refer to page 28 for how to calculate the resistances of the output voltage setting.
FB
Internal power supply voltage terminal.
Voltage of 5.25V (Typ) is outputted with more than 2.2V for EN terminal.
Connect 1µF ceramic capacitor to ground.
VREG
Enable terminal.
Turning this terminal signal Low (0.3V or lower) forces the device to enter the shutdown
mode. Turning this terminal signal High (2.2V or higher) enables the device. This terminal
must be properly terminated.
8
-
EN
Backside heat dissipation pad. Connecting to the PCB ground plane by using multiple via
provides excellent heat dissipation characteristics.
E-PAD
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Block Diagram
VREG
7
VREG
VIN
5V REG
BG
VIN
1
2
Thermal
Protection
VREG
TSD
BOOT
BG
EN
UVLO
TSD
EN
R
S
On Time
Controller
Block
Q
SW
3
Soft
Start
Driver
Circuit
SS 5
SW
ZERO
OCP
4 GND
6
FB
REF
SS
Main
Comparator
UVLO
OCP
TSD
EN 8
EN Logic
UVLO
Figure 3. Block Diagram
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Description of Blocks
1. EN Logic
The IC will shut down when EN falls to 0.3V (Max) or lower. When EN reaches 2.2V (Min), the internal circuit is activated
and the IC starts up.
2. 5V REG
The 5V REG block generates the internal power supply 5.25V (Typ).
3. BG
The BG block generates the internal reference voltage (VREF).
4. Main Comparator
When FB terminal voltage becomes lower than VREF, the Main Comparator block outputs High and reports to the ON
Time Controller Block that the output voltage has dropped below the control voltage.
5. ON Time Controller Block
This block generates ON Time. The desired ON Time is generated when Main Comparator output becomes High. ON
Time is adjusted to restrict frequency change even with Input / Output voltage change.
6. Soft Start
The Soft Start circuit slows down the rise of output voltage during start-up and controls the current, which allows the
prevention of output voltage overshoot and inrush current.
7. Driver Circuit
This block is a DC/DC driver. A signal from ON Time Controller Block is applied to drive the MOSFETs.
8. UVLO
UVLO is a protection circuit that prevents low voltage malfunction. It prevents malfunction of the internal circuit from
sudden rise and fall of power supply voltage. It monitors the the internal power supply voltage (VREG). When VREG is
higher than 3.8V (Typ), UVLO is released and the soft-start circuit will be started. This threshold voltage has a hysteresis
of 300mV (Typ). When VREG is less than 3.5V (Typ), the MOSFETs will turn OFF and the output voltage will shut down.
9. TSD
The TSD block is for thermal protection. The thermal protection circuit shuts down the device when the internal
temperature of IC rises to 175°C (Typ) or higher. Thermal protection circuit resets when the temperature falls. The
circuit has a hysteresis of 25°C (Typ).
10. OCP/ZERO
The OCP function is effective by controlling current which flows in Low-Side MOSFET by 1 cycle each of switching
period. With inductor current exceeding the current restriction value IOCP during Low-Side MOSFET is ON, the High-Side
MOSFET cannot turn ON even with FB voltage is lower than VREF voltage and Low-Side MOSFET keeps ON until it
becomes below IOCP. High-Side MOSFET will turn ON after it goes below IOCP. When inductor current becomes below
0A (Typ) during Low-Side MOSFET is ON, the Low-Side MOSFET will turn OFF.
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Absolute Maximum Ratings (Ta = 25C)
Parameter
Symbol
VIN
Rating
-0.3 to +20
-0.3 to +27
-0.3 to +7
-0.3 to VREG
-0.5 to VIN + 0.3
-0.3 to +7
-0.3 to +7
-0.3 to VIN
150
Unit
V
Input Voltage
Voltage from GND to BOOT
Voltage from SW to BOOT
FB Terminal Voltage
VBOOT
VBOOT - VSW
VFB
V
V
V
SW Terminal Voltage
VSW
V
VREG Terminal Voltage
SS Terminal Voltage
VREG
V
VSS
V
EN Terminal Voltage
VEN
V
Maximum Junction Temperature
Storage Temperature Range
Tjmax
Tstg
°C
°C
-55 to +150
Caution 1: Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit
between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is operated over
the absolute maximum ratings.
Caution 2: Should by any chance the maximum junction temperature rating be exceeded the rise in temperature of the chip may result in deterioration of the
properties of the chip. In case of exceeding this absolute maximum rating, increase the board size and copper area to prevent exceeding the maximum junction
temperature rating.
Thermal Resistance (Note 1)
Thermal Resistance (Typ)
Parameter
Symbol
Unit
1s(Note 3)
2s2p(Note 4)
UMMP008Z2020
Junction to Ambient
Junction to Top Characterization Parameter(Note 2)
θJA
-
-
58.3
11
°C/W
°C/W
ΨJT
(Note 1) Based on JESD51-2A (Still-Air)
(Note 2) The thermal characterization parameter to report the difference between junction temperature and the temperature at the top center of the outside
surface of the component package.
(Note 3) Using a PCB board based on JESD51-3.
Layer Number of
Measurement Board
Material
FR-4
Board Size
Single
114.3mm x 76.2mm x 1.57mmt
Top
Copper Pattern
Thickness
Footprints and Traces
70μm
(Note 4) Using a PCB board based on JESD51-5, 7
Thermal Via(Note 5)
Layer Number of
Material
Board Size
Measurement Board
Pitch
-
Diameter
4 Layers
Top
FR-4
114.3mm x 76.2mm x 1.6mmt
2 Internal Layers
Φ0.30mm
Bottom
Copper Pattern
Thickness
Copper Pattern
Thickness
Copper Pattern
Thickness
Footprints and Traces
70μm
74.2mm x 74.2mm
35μm
74.2mm x 74.2mm
70μm
(Note 5) This thermal via connects with the copper pattern of all layers.
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Recommended Operating Conditions
Parameter
Symbol
VIN
Min
Typ
Max
18
+85 (Note 1)
Unit
V
Input Voltage
4.5
12
-
Operating Temperature Range
Output Current
Topr
-40
0
°C
A
IOUT
-
3
Output Voltage Range
VRANGE
0.765(Note 2)
-
7 (Note 3)
V
(Note 1) Tj must be lower than 150°C under actual operating environment.
(Note 2) Please use under the condition of VOUT ≥ VIN×0.07 [V].
(Note 3) Please use under the condition of VOUT ≤ VIN×0.65 [V].
(Refer to the page 28 for how to calculate the output voltage setting.)
Electrical Characteristics (Ta = 25°C, VIN = 12V, VEN = 3V unless otherwise specified)
Parameter
Symbol
Min
Typ
Max
Unit
Conditions
Standby Circuit Current
ISTB
-
2
15
µA VEN=GND
IOUT=0mA
mA
Operating Circuit Current
IVIN
-
0.7
2
Non switching
EN Low Voltage
VENL
VENH
GND
-
-
0.3
VIN
5
V
EN High Voltage
2.2
V
EN Input Current
IEN
-
-
1.5
-
µA VEN=3V
VREG Standby Voltage
VREG Output Voltage
VREG Output Current
UVLO Threshold Voltage
UVLO Hysteresis Voltage
VREG_STB
VREG
0.1
5.5
-
V
V
VEN=GND
5
5.25
10
3.8
300
IREG
-
mA
V
VREG_UVLO
dVREG_UVLO
3.4
200
4.2
400
VREG: Sweep up
mV VREG: Sweep down
VIN=12V, VOUT=1.8V
V
Reference Voltage
VREF
0.753
0.765
0.777
PWM Mode Operation
FB Input Current
IFB
-
-
1
µA VFB=1V
µA
SS Charge Current
ISSC
1.4
2.0
2.6
VREG=5.25V,
mA
SS Discharge Current
ON Time
ISSD
tON
0.1
-
0.2
-
-
VSS=0.5V
VIN=12V, VOUT=1.8V
215
ns
PWM Mode Operation
Minimum OFF Time
tOFFMIN
RONH
RONL
IOCP
100
200
80
-
ns
mΩ
mΩ
A
High Side FET ON-Resistance
Low Side FET ON-Resistance
-
-
-
160
100
-
50
5 (Note 4)
Over Current Protection Current Limit
(Note 4) No tested on outgoing inspection.
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Typical Performance Curves
10
9
8
7
6
5
4
3
2
1
0
2000
1800
1600
1400
1200
1000
800
VIN = 12V
VIN = 12V
600
400
200
0
-40
-20
0
20
40
60
80
-40
-20
0
20
40
60
80
Temperature : Ta [°C]
Temperature : Ta [°C]
Figure 4. Operating Circuit Current vs Temperature
Figure 5. Standby Circuit Current vs Temperature
1.90
50
45
40
35
30
25
20
15
10
5
1.85
1.80
1.75
1.70
VIN = 12V
0
0
5
10
15
20
0
1
2
3
EN Voltage [V]
Output Current : I
[A]
OUT
Figure 6. EN Input Current vs EN Voltage
Figure 7. Output Voltage vs Output Current
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Typical Performance Curves - continued
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-40
-20
0
20
40
60
80
-40
-20
0
20
40
60
80
Temperature : Ta [°C]
Temperature : Ta [°C]
Figure 8. EN OFF Threshold Voltage vs Temperature
Figure 9. EN ON Threshold Voltage vs Temperature
5.0
4.0
3.0
5.50
5.40
VIN = 12V
5.30
VEN = 3V
2.0
5.20
5.10
5.00
1.0
0.0
-40
-20
0
20
40
60
80
-40
-20
0
20
tu
40
[°
60
80
Temperature : Ta [°C]
Tem
p
e
ra
r
e
:
T
a
C
]
Figure 11. VREG Output Voltage vs Temperature
Figure 10. EN Input Current vs Temperature
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Typical Performance Curves - continued
400
350
300
250
200
4.2
4.0
3.8
3.6
3.4
-40
-20
0
20
40
60
80
-40
-20
0
20
40
60
80
Temperature : Ta [°C]
Temperature : Ta [°C]
Figure 12. UVLO Threshold Voltage vs Temperature
Figure 13. UVLO Hysteresis Voltage vs Temperature
0.780
1.0
VIN = 12V
VIN = 12V
VFB = 1V
0.775
0.770
0.765
0.760
0.755
0.750
0.8
0.6
0.4
0.2
0.0
-40
-20
0
20
40
60
80
-40
-20
0
20
40
60
80
Temperature : Ta [°C]
Temperature : Ta [°C]
Figure 15. FB Input Current vs Temperature
Figure 14. Reference Voltage vs Temperature
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Typical Performance Curves - continued
285
250
215
180
145
2.6
VIN = 12V
VOUT = 1.8V
VIN = 12V
2.4
2.2
2.0
1.8
1.6
1.4
-40
-20
0
20
40
60
80
-40
-20
0
20
40
60
80
Temperature : Ta [°C]
Temperature : Ta [°C]
Figure 16. SS Charge Current vs Temperature
Figure 17. ON Time vs Temperature
400
160
140
120
100
80
VIN = 12V
VIN = 12V
300
200
100
0
60
40
20
0
-40
-20
0
20
40
60
80
-40
-20
0
20
40
60
80
Temperature : Ta [°C]
Temperature : Ta [°C]
Figure 19. High Side MOSFET ON-Resistance vs Temperature
Figure 18. Minimum OFF Time vs Temperature
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Typical Performance Curves - continued
100
VIN = 12V
80
60
40
20
0
-40
-20
0
20
40
60
80
Temperature : Ta [°C]
Figure 20. Low Side MOSFET ON-Resistance vs Temperature
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
0
20 40 60 80 100
-60 -40 -20
0
20 40 60 80 100
Temperature : Ta [°C]
Temperature : Ta [°C]
Figure 22. Operational Range VIN = 12V, VOUT = 5V (Tj<150°C)
(Measured on FR-4 board 67.5 mm x 67.5 mm,
Figure 21. Operational Range VIN = 12V, VOUT = 1V (Tj<150°C)
(Measured on FR-4 board 67.5 mm x 67.5 mm,
Copper Thickness : Top and Bottom 70μm, 2 Internal Layers 35μm)
Copper Thickness : Top and Bottom 70μm, 2 Internal Layers 35μm)
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Typical Performance Curves - continued
VIN = 10V/div
VREG = 5V/div
VIN = 10V/div
VREG = 5V/div
VSW = 10V/div
VSW = 10V/div
VOUT = 1V/div
VOUT = 1V/div
Time = 1ms/div
Time = 1ms/div
Figure 23. Start-up Waveform (VIN = VEN
)
Figure 24. Shutdown Waveform (VIN = VEN)
(VIN = 12V, VOUT = 1.8V, IOUT = 3A, CSS = 3300pF)
(VIN = 12V, VOUT = 1.8V, IOUT = 3A, CSS = 3300pF)
VEN = 5V/div
VEN = 5V/div
VREG = 5V/div
VREG = 5V/div
VSW = 10V/div
VSW = 10V/div
VOUT = 1V/div
VOUT = 1V/div
Time = 1ms/div
Time = 1ms/div
Figure 26. Shutdown Waveform (VEN = 5V to 0V)
(VIN = 12V, VOUT = 1.8V, IOUT = 3A, CSS = 3300pF)
Figure 25. Start-up Waveform (VEN = 0V to 5V)
(VIN = 12V, VOUT = 1.8V, IOUT = 3A, CSS = 3300pF)
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Typical Performance Curves - continued
VOUT = 20mV/div
VIN = 100mV/div
VSW = 5V/div
VSW = 5V/div
Time = 0.5µs/div
Time = 0.5µs/div
Figure 27. VOUT Ripple
Figure 28. VIN Ripple
(VIN = 12V, VOUT = 1.8V, IOUT = 3A, L = 2.2μH, COUT = 22μF x 2) (VIN = 12V, VOUT = 1.8V, IOUT = 3A, L = 2.2μH, COUT = 22μF x 2)
VSW = 2V/div
VSW = 2V/div
Time = 10ns/div
Time = 10ns/div
Figure 29. SW Turn ON
Figure 30. SW Turn OFF
(VIN = 12V, VOUT = 1.8V, IOUT = 3A, L = 2.2μH, COUT = 22μF x 2) (VIN = 12V, VOUT = 1.8V, IOUT = 3A, L = 2.2μH, COUT = 22μF x 2)
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Typical Performance Curves - continued
850
800
750
700
650
600
550
900
800
700
600
500
400
300
200
100
0
4
6
8
10
12
14
16
18
0
0.5
1
1.5
2
2.5
3
Output Current : IOUT [A]
Input Voltage : VIN [V]
Figure 32. Switching Frequency vs Output Current
(VIN=12V, VOUT=1.8V, L=2.2μH, COUT=22μF x 2)
Figure 31. Switching Frequency vs Input Voltage
(VOUT = 1.8V, IOUT = 3A, L = 2.2μH, COUT = 22μF x 2)
2
1.5
1
2
1.5
1
0.5
0
0.5
0
-0.5
-1
-0.5
-1
-1.5
-2
-1.5
-2
4
6
8
10
12
14
16
18
0
0.5
1
1.5
2
2.5
3
Output Current : IOUT [A]
Input Voltage : VIN [V]
Figure 33. VOUT Line Regulation
(VOUT=1.8V, IOUT=1A)
Figure 34. VOUT Load Regulation
(VIN=12V, VOUT=1.8V)
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Function Explanations
1. Basic Operation
(1) Constant ON Time Control
BD9D322QWZ is a single synchronous buck DC/DC converter employing a constant ON-time control system.
It controls the ON-time by using the duty ratio of VOUT /VIN inside IC so that a switching frequency becomes 700kHz.
Therefore it runs with the frequency of 700 kHz under the constant ON-time decided with VOUT / VIN.
(2) SLLMTM Control
BD9D322QWZ utilizes switching operation in PWM (Pulse Width Modulation) mode for heavier load, while it utilizes
SLLM (Simple Light Load Mode) control for lighter load to improve efficiency.
① SLLMTM Control
② PWM Control
Output Current : IOUT [A]
Figure 35. Efficiency vs Output Current
(SLLMTM Control and PWM Control)
①SLLMTM Control
②PWM Control
VOUT = 20mV/div
VOUT = 20mV/div
VSW = 5V/div
VSW = 5V/div
Time = 10µs/div
Time = 1µs/div
Figure 36. SW Waveform (①SLLMTM Control)
(VIN = 12V, VOUT = 1.8V, IOUT = 30mA)
Figure 37. SW Waveform (②PWM Control)
(VIN = 12V, VOUT = 1.8V, IOUT = 3A)
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(3) Enable Control
The IC shutdown can be controlled by the voltage applied to the EN terminal. When VEN reaches 2.2V (Min), the
internal circuit is activated and the IC starts up. To enable shutdown control with the EN terminal, the shutdown slew
rate of EN must be set to less than -1.0V/ms.
VEN
VENH
VENL
0
t
VOUT
0
t
Start-up
Shutdown
Figure 38. Start-up and Shutdown with Enable
(4) Soft Start Function
When EN terminal is switched High, Soft Start operates and the output voltage gradually rises. With the Soft Start
Function, overshoot of output voltage and rush current can be prevented. Rising time can be set by connecting
capacitor to SS terminal. For setting the rising time, please refer to page 29.
EN
SS
VTH
VOUT
0.765V
FB
tD
tSS
Figure 39. Soft Start Timing Chart
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2. Protective Functions
The protective circuits are intended for prevention of damage caused by unexpected accidents. Do not use
them for continuous protective operation.
(1) Over Current Protection (OCP)
Over current protection function is effective by controlling current which flows in Low-Side MOSFET by 1 cycle each
of switching period. With inductor current exceeding the current restriction value IOCP during LG is ON, the HG pulse
cannot turn ON even with FB voltage is lower than VREF voltage and Low-Side MOSFET keeps ON until it becomes
below IOCP. High-Side MOSFET will turn ON after it goes below IOCP. As a result, both frequency and duty fluctuates
and output voltage may decrease.
In a case where output is decreased because of OCP, output may rise after OCP is released due to the action at
high speed load response. This is non-latch protection and after over-current situation is released the output
voltage will recover.
VOUT
FB
High side
MOSFET gate
(HG)
Low side
MOSFET gate
(LG)
OCP threshold (IOCP
)
Inductor current
OCP signal
inside IC
Output load
current
Over
Current
Normal
Normal
Figure 40. Over Current Protection Timing Chart
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BD9D322QWZ
(2) Under Voltage Lockout Protection (UVLO)
The Under Voltage Lockout Protection circuit monitors the VREG terminal voltage.
The operation enters standby when the VREG terminal voltage is 3.5V (Typ) or lower.
The operation starts when the VREG terminal voltage is 3.8V (Typ) or higher.
UVLO Release
VREG
Hysteresis
UVLO Detection
0V
VOUT
Soft start
VFB
High Side
MOSFET gate
Low Side
MOSFET gate
Normal operation
UVLO
Normal operation
Figure 41. UVLO Timing Chart
(Note) Load at Start-up
Ensure that the respective output has light load at startup of this IC. Also, restrain the power supply line noise at
start-up and voltage drop generated by operating current within the hysteresis width of UVLO. Noise exceeding the
hysteresis noise width may cause the IC to malfunction.
(3) Thermal Shutdown Function
When the chip temperature exceeds Tj = 175°C (Typ), the DC/DC converter is stopped. The thermal shutdown
circuit is intended for shutting down the IC from thermal runaway in an abnormal state with the temperature
exceeding Tjmax = 150°C. Do not use this function for application protection design. This is non-latch protection.
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Application Example (VOUT = 5.0V)
Parameter
Input Voltage
Symbol
VIN
Specification Example
12V
5.0V
Output Voltage
VOUT
fOSC
Switching Frequency
Maximum Output Current
Operating Temperature Range
700kHz(Typ)
3A
IOUTMAX
Topr
-40°C to +75°C
EN
BD9D322QWZ
VIN
1
2
3
4
8
7
6
5
VIN
EN
VREG
FB
C3
C2
C1
SW_EN
C8
BOOT
SW
VOUT
open
R0
L1
R3
R2
GND
SS
C10
C6
C5
R4
C7
C9
R1
Figure 42. Application Circuit
Table 1. Recommended Component Values
Part No
Value
3.3μH
0.1μF
10μF
10μF
22μF
22μF
3300pF
0.1μF
1μF
Company
Murata
Murata
Murata
Murata
Murata
Murata
Murata
Murata
Murata
Murata
ROHM
ROHM
ROHM
ROHM
-
Part Name
L1
FDSD0518-H-3R3M
GRM188R71H104KA93D
GRM32DB31E106KA75L
GRM32DB31E106KA75L
GRM32EB31E226ME15L
GRM32EB31E226ME15L
GRM155B11H332KA01
GRM188R71H104KA93D
GRM188B11A105KA61D
GRM1552C1E220JA01
MCR01MZPJ000
(Note 1)
C1
(Note 2)
C2
(Note 2)
C3
(Note 3)
C5
(Note 3)
C6
C7
C8
C9
C10
R0
R1
R2
R3
R4
22pF
0Ω
22kΩ
120kΩ
1.8kΩ
OPEN
MCR01MZPF2202
MCR01MZPF1203
MCR01MZPF1801
-
(Note 1) In order to reduce the influence of high frequency noise, arrange the 0.1μF ceramic capacitor as close as possible to the VIN pin and GND pin.
(Note 2) For capacitance of input capacitor, take temperature characteristics, DC bias characteristics, etc. into consideration to set minimum value to no
less than 4.7μF. When VIN is lower than 7V at normal state, add capacitor same as C2 to C3.
(Note 3) In case capacitance value fluctuates due to temperature characteristics, DC bias characteristics, etc. of output capacitor, Loop Response may
fluctuate. Please confirm on actual equipment. When selecting a capacitor, confirm the characteristics of the capacitor in its datasheet, Please
use capacitors such as ceramic type are recommended for output capacitor.
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100
90
80
70
60
50
40
30
20
10
VOUT = 100mV/div
VOUT = 5.0V
0
IOUT = 1A/div
0.01
0.1
1
10
Output Current: IOUT [A]
Time = 100μs/div
Figure 44. Load Transient Response IOUT = 0.1A - 3A
(VIN = 12V, VOUT = 5.0V)
Figure 43. Efficiency vs Output Current
(VIN = 12V, VOUT = 5.0V)
VOUT = 50mV/div
VOUT = 50mV/div
VSW = 5V/div
VSW = 5V/div
Time = 4μs/div
Time = 4μs/div
Figure 46. VOUT Ripple IOUT = 3.0A
(VIN = 12V, VOUT = 5.0V)
Figure 45. VOUT Ripple IOUT = 0.1A
(VIN = 12V, VOUT = 5.0V)
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Application Example (VOUT = 3.3V)
Parameter
Input Voltage
Symbol
VIN
Specification Example
12V
3.3V
Output Voltage
VOUT
fOSC
Switching Frequency
Maximum Output Current
Operating Temperature Range
700kHz(Typ)
3A
IOUTMAX
Topr
-40°C to +85°C
EN
BD9D322QWZ
VIN
1
2
3
4
8
7
6
5
VIN
EN
VREG
FB
C3
C2
C1
SW_EN
C8
BOOT
SW
VOUT
open
R0
L1
R3
R2
GND
SS
C10
C6
C5
R4
C7
C9
R1
Figure 47. Application Circuit
Table 2. Recommended Component Values
Part No
Value
2.2μH
0.1μF
10μF
10μF
22μF
22μF
3300pF
0.1μF
1μF
Company
Murata
Murata
Murata
Murata
Murata
Murata
Murata
Murata
Murata
Murata
ROHM
ROHM
ROHM
ROHM
-
Part Name
L1
FDSD0518-H-2R2M
GRM188R71H104KA93D
GRM32DB31E106KA75L
GRM32DB31E106KA75L
GRM31CB31A226ME19L
GRM31CB31A226ME19L
GRM155B11H332KA01
GRM188R71H104KA93D
GRM188B11A105KA61D
GRM1552C1E270JA01
MCR01MZPJ000
(Note 1)
C1
(Note 2)
C2
(Note 2)
C3
(Note 3)
C5
(Note 3)
C6
C7
C8
C9
C10
R0
R1
R2
R3
R4
27pF
0Ω
22kΩ
68kΩ
5.1kΩ
OPEN
MCR01MZPF2202
MCR01MZPF6802
MCR01MZPF5101
-
(Note 1) In order to reduce the influence of high frequency noise, arrange the 0.1μF ceramic capacitor as close as possible to the VIN pin and GND pin.
(Note 2) For capacitance of input capacitor, take temperature characteristics, DC bias characteristics, etc. into consideration to set minimum value to no
less than 4.7μF. When VIN is lower than 7V at normal state, add capacitor same as C2 to C3.
(Note 3) In case capacitance value fluctuates due to temperature characteristics, DC bias characteristics, etc. of output capacitor, Loop Response may
fluctuate. Please confirm on actual equipment. When selecting a capacitor, confirm the characteristics of the capacitor in its datasheet, Please
use capacitors such as ceramic type are recommended for output capacitor.
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100
90
80
70
60
50
40
30
20
10
VOUT = 100mV/div
VOUT = 3.3V
0
IOUT = 1A/div
0.01
0.1
1
10
Output Current : IOUT [A]
Time = 100μs/div
Figure 49. Load Transient Response IOUT = 0.1A - 3A
(VIN = 12V, VOUT = 3.3V)
Figure 48. Efficiency vs Output Current
(VIN = 12V, VOUT = 3.3V)
VOUT = 50mV/div
VOUT = 50mV/div
VSW = 5V/div
VSW = 5V/div
Time = 4μs/div
Time = 4μs/div
Figure 50. VOUT Ripple IOUT = 0.1A
(VIN = 12V, VOUT = 3.3V)
Figure 51. VOUT Ripple IOUT = 3.0A
(VIN = 12V, VOUT = 3.3V)
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Application Example (VOUT = 1.8V)
Parameter
Input Voltage
Symbol
VIN
Specification Example
12V
1.8V
Output Voltage
VOUT
fOSC
Switching Frequency
Maximum Output Current
Operating Temperature Range
700kHz(Typ)
3A
IOUTMAX
Topr
-40°C to +85°C
EN
BD9D322QWZ
VIN
1
2
3
4
8
7
6
5
VIN
EN
VREG
FB
C3
C2
C1
SW_EN
C8
BOOT
SW
VOUT
open
R0
L1
R3
R2
GND
SS
C10
C6
C5
R4
C7
C9
R1
Figure 52. Application Circuit
Table 3. Recommended Component Values
Part No
Value
2.2μH
0.1μF
10μF
10μF
22μF
22μF
3300pF
0.1μF
1μF
Company
Murata
Murata
Murata
Murata
Murata
Murata
Murata
Murata
Murata
Murata
ROHM
ROHM
ROHM
ROHM
-
Part Name
L1
FDSD0518-H-2R2M
GRM188R71H104KA93D
GRM32DB31E106KA75L
GRM32DB31E106KA75L
GRM21BB30J226ME38L
GRM21BB30J226ME38L
GRM155B11H332KA01
GRM188R71H104KA93D
GRM188B11A105KA61D
GRM1552C1E470JA01
MCR01MZPJ000
(Note 1)
C1
(Note 2)
C2
(Note 2)
C3
(Note 3)
C5
(Note 3)
C6
C7
C8
C9
C10
R0
R1
R2
R3
R4
47pF
0Ω
22kΩ
30kΩ
0Ω
MCR01MZPF2202
MCR01MZPF3002
MCR01MZPJ000
OPEN
-
(Note 1) In order to reduce the influence of high frequency noise, arrange the 0.1μF ceramic capacitor as close as possible to the VIN pin and GND pin.
(Note 2) For capacitance of input capacitor, take temperature characteristics, DC bias characteristics, etc. into consideration to set minimum value to no
less than 4.7μF. When VIN is lower than 7V at normal state, add capacitor same as C2 to C3.
(Note 3) In case capacitance value fluctuates due to temperature characteristics, DC bias characteristics, etc. of output capacitor, Loop Response may
fluctuate. Please confirm on actual equipment. When selecting a capacitor, confirm the characteristics of the capacitor in its datasheet, Please
use capacitors such as ceramic type are recommended for output capacitor.
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100
90
80
70
60
50
40
30
20
10
VOUT = 100mV/div
VOUT = 1.8V
0
IOUT = 1A/div
0.01
0.1
1
10
Output Current: IOUT [A]
Time = 100μs/div
Figure 54. Load Transient Response IOUT = 0.1A - 3A
(VIN = 12V, VOUT = 1.8V)
Figure 53. Efficiency vs Output Current
(VIN = 12V, VOUT = 1.8V)
VOUT = 50mV/div
VOUT = 50mV/div
VSW = 5V/div
VSW = 5V/div
Time = 4μs/div
Time = 4μs/div
Figure 55. VOUT Ripple IOUT = 0.1A
(VIN = 12V, VOUT = 1.8 V)
Figure 56. VOUT Ripple IOUT = 3.0A
(VIN = 12V, VOUT = 1.8V)
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Application Example (VOUT = 1.2V)
Parameter
Input Voltage
Symbol
VIN
Specification Example
12V
1.2V
Output Voltage
VOUT
fOSC
Switching Frequency
Maximum Output Current
Operating Temperature Range
700kHz(Typ)
3A
IOUTMAX
Topr
-40°C to +85°C
EN
BD9D322QWZ
VIN
1
2
3
4
8
7
6
5
VIN
EN
VREG
FB
C3
C2
C1
SW_EN
C8
BOOT
SW
VOUT
open
R0
L1
R3
R2
GND
SS
C10
C6
C5
R4
C7
C9
R1
Figure 57. Application Circuit
Table 4. Recommended Component Values
Part No
Value
1.5μH
0.1μF
10μF
10μF
22μF
22μF
3300pF
0.1μF
1μF
Company
Murata
Murata
Murata
Murata
Murata
Murata
Murata
Murata
Murata
Murata
ROHM
ROHM
ROHM
ROHM
ROHM
Part Name
L1
FDSD0518-H-1R5M
GRM188R71H104KA93D
GRM32DB31E106KA75L
GRM32DB31E106KA75L
GRM31CB31A226ME19L
GRM31CB31A226ME19L
GRM155B11H332KA01
GRM188R71H104KA93D
GRM188B11A105KA61D
GRM155B11H221KA01
MCR01MZPJ000
(Note 1)
C1
(Note 2)
C2
(Note 2)
C3
(Note 3)
C5
(Note 3)
C6
C7
C8
C9
C10
R0
R1
R2
R3
R4
220pF
0Ω
10kΩ
4.7kΩ
1kΩ
MCR01MZPF1002
MCR01MZPF4701
MCR01MZPF1001
300kΩ
MCR01MZPF3003
(Note 1) In order to reduce the influence of high frequency noise, arrange the 0.1μF ceramic capacitor as close as possible to the VIN pin and GND pin.
(Note 2) For capacitance of input capacitor, take temperature characteristics, DC bias characteristics, etc. into consideration to set minimum value to no
less than 4.7μF. When VIN is lower than 7V at normal state, add capacitor same as C2 to C3.
(Note 3) In case capacitance value fluctuates due to temperature characteristics, DC bias characteristics, etc. of output capacitor, Loop Response may
fluctuate. Please confirm on actual equipment. When selecting a capacitor, confirm the characteristics of the capacitor in its datasheet, Please
use capacitors such as ceramic type are recommended for output capacitor.
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100
90
80
70
60
50
40
30
20
10
VOUT = 100mV/div
VOUT = 1.2V
0
IOUT = 1A/div
0.01
0.1
1
10
Output Current : IOUT [A]
Time = 100μs/div
Figure 58. Efficiency vs Output Current
(VIN = 12V, VOUT = 1.2V)
Figure 59. Load Transient Response IOUT = 0.1A - 3A
(VIN = 12V, VOUT = 1.2V)
VOUT = 50mV/div
VOUT = 50mV/div
VSW = 5V/div
VSW = 5V/div
Time = 4μs/div
Time = 4μs/div
Figure 61. VOUT Ripple IOUT = 3.0A
(VIN = 12V, VOUT = 1.2V)
Figure 60. VOUT Ripple IOUT = 0.1A
(VIN=12V, VOUT=1.2 V)
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Selection of Components Externally Connected
About the application except the recommendation, please contact us.
1. Output LC Filter Constant
The DC/DC converter requires an LC filter for smoothing the output voltage in order to supply a continuous current to the
load. Selecting an inductor with a large inductance causes the ripple current ∆IL that flows into the inductor to be small.
However, decreasing the ripple voltage generated in the output is not advantageous in terms of the load transient
response characteristic. An inductor with a small inductance improves the load transient response characteristic but
causes the inductor ripple current to be large which increases the ripple voltage in the output voltage, showing a
trade-OFF relationship. Please use recommended inductor values.
VIN
IL
Inductor saturation current > IOUTMAX +∆IL /2
L
VOUT
∆IL
Driver
COUT
Average inductor current
(Output Current：IOUT
)
t
Figure 62. Waveform of Current through Inductor
Figure 63. Output LC Filter Circuit
Here, select an inductance so that the size of the ripple current component of the inductor will be 20% to 50% of the Max
output current (3A).
Now calculating with VIN = 12V, VOUT = 1.8V, switching frequency fOSC = 700kHz, ΔIL is 1.0A, inductance value, that can
be used is calculated as follows:
1
[ ]
= 2.19 ≒2.2 μH
L = VOUT × (VIN -VOUT ) ×
VIN × fOSC × ΔIL
Also for saturation current of inductor, select the one with larger current than maximum output current (IOUTMAX) added by
1/2 of inductor ripple current ∆IL.
Output capacitor COUT affects output ripple voltage characteristics. Select output capacitor COUT so that necessary ripple
voltage characteristics are satisfied.
The output ripple voltage can be represented by the following equation.
1
[ ]
V
ΔVRPL = ΔI L × (RESR
+
)
8 ×COUT × fOSC
RESR is the Equivalent Series Resistance (ESR) of the output capacitor.
With COUT = 44µF, RESR = 10mΩ the output ripple voltage is calculated as follows:
1
[
]
ΔVRPL = 1.0 × (10m+
) = 14.06 mV
8 × 44μ × 700k
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BD9D322QWZ
※The capacitor rating must allow a sufficient margin with respect to the output voltage.
The output ripple voltage is decreased with a smaller ESR capacitor.
Considering temperature and DC bias characteristics, please use ceramic capacitor with 22µF to 100µF capacity.
※Pay attention to total capacitance value, when additional capacitor CLOAD is connected in addition to output capacitor
COUT. Then, please determine CLOAD and soft start time tSS (Refer to 4. Soft Start Setting) as satisfying the following
equation.
(IOCP - IOUT ) × tSS
[ ]
F
COUT + CLOAD
≤
VOUT
Where:
IOCP is the Over Current Protection Current limit value
2. Output Voltage Setting
The output voltage value is set by the feedback resistance ratio.
VOUT
R1 + R
R1
VOUT
=
2 ×0.765
V
R2
BD9D322QWZ operates under the condition which satisfies
the following equation.
FB
Voltage
Reference
VOUT
R1
0.07 ≤
≤ 0.65
VIN
Figure 64. Feedback Resistor Circuit
3. Input Capacitor
For input capacitor, use a ceramic capacitor. It is more effective, the closer it is to the VIN pin and GND pin. Please
consider the derating for a ceramic capacitor when usage. For normal setting, 10μF is recommended, but with larger
value, input ripple voltage can be further reduced. Also, considering temperature and DC bias characteristics, do not use
capacity less than 4.7μF. In order to reduce the influence of high frequency noise, place 0.1μF ceramic capacitor close
to VIN pin and GND pin as much as possible. When VIN is lower than 7V at normal state, double the value of input
capacitor.
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4. Soft Start Setting
Turning the EN terminal signal High activates the soft start function. This makes output voltage to rise gradually while
controlling current at start-up. This prevents output voltage overshoot and inrush current. The rise time depends on the
value of the capacitor connected to the SS terminal.
CSS ×VTH
t D =
s
ISSC
CSS ×VFB ×1.15
ISSC
tSS =
s
Where:
tD is the Soft Start Delay Time
tSS is the Soft Start Time
CSS is the Capacitor connected to SS terminal
VFB is the FB Terminal Voltage (0.765V Typ)
VTH is the Internal MOS threshold voltage (0.7V Typ)
ISSC is the SS Charge Current (2.0µA Typ)
With CSS = 3300pF,
tD = (3300pF × 0.7V ) / 2.0μΑ
= 1.16ms
tSS = (3300pF × 0.765V ×1.15 ) / 2.0μΑ
= 1.45ms
5. Bootstrap Capacitor
Connect 0.1μF ceramic capacitor between SW pin and BOOT pin.
6. VREG Capacitor
Connect 1µF ceramic capacitor to ground.
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PCB Layout Design
In the step-down DC/DC converter, a large pulse current flows into two loops. The first loop is the one into which the current
flows when the High Side MOSFET is turned ON. The flow starts from the input capacitor CIN, runs through the MOSFET,
inductor L and output capacitor COUT and back to ground of CIN via ground of COUT. The second loop is the one into which the
current flows when the Low Side MOSFET is turned ON. The flow starts from the Low Side MOSFET, runs through the
inductor L and output capacitor COUT and back to ground of the Low Side MOSFET via ground of COUT. Route these two
loops as thick and as short as possible to allow noise to be reduced for improved efficiency. It is recommended to connect
the input and output capacitors directly to the ground plane. The PCB layout has a great influence on the DC/DC converter in
terms of all of the heat generation, noise and efficiency characteristics.
VIN
VOUT
L
MOSFETs
CIN
COUT
GND
Figure 65. Current Loop of Buck DC/DC Converter
Accordingly, design the PCB layout considering the following points.
1. Connect an input capacitor as close as possible to the IC VIN terminal and GND terminal on the same plane as the IC.
2. If there is any unused area on the PCB, provide a copper foil plane for the ground node to assist heat dissipation from
the IC and the surrounding components.
3. Switching nodes such as SW are susceptible to noise due to AC coupling with other nodes. Route the inductor pattern
as thick and as short as possible.
4. Provide lines connected to FB and SS far from the SW nodes.
5. Place the output capacitor away from the input capacitor in order to avoid the effect of harmonic noise from the input.
TOP Layer
Bottom Layer
Figure 66. Example of PCB Layout
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I/O Equivalence Circuits
2. BOOT
3. SW
BOOT
VREG
VIN
VIN
BOOT
SW
SW
5. SS
6. FB
VREG
VREG
15kΩ
FB
SS
2.3kΩ
7. VREG
8. EN
EN
VIN
333kΩ
667kΩ
1MΩ
VREG
Figure 67. I/O Equivalence Circuits
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Operational Notes
1.
2.
Reverse Connection of Power Supply
Connecting the power supply in reverse polarity can damage the IC. Take precautions against reverse polarity when
connecting the power supply, such as mounting an external diode between the power supply and the IC’s power
supply pins.
Power Supply Lines
Design the PCB layout pattern to provide low impedance supply lines. Separate the ground and supply lines of the
digital and analog blocks to prevent noise in the ground and supply lines of the digital block from affecting the analog
block. Furthermore, connect a capacitor to ground at all power supply pins. Consider the effect of temperature and
aging on the capacitance value when using electrolytic capacitors.
3.
4.
Ground Voltage
Ensure that no pins are at a voltage below that of the ground pin at any time, even during transient condition. However,
pins that drive inductive loads (e.g. motor driver outputs, DC-DC converter outputs) may inevitably go below ground
due to back EMF or electromotive force. In such cases, the user should make sure that such voltages going below
ground will not cause the IC and the system to malfunction by examining carefully all relevant factors and conditions
such as motor characteristics, supply voltage, operating frequency and PCB wiring to name a few.
Ground Wiring Pattern
When using both small-signal and large-current ground traces, the two ground traces should be routed separately but
connected to a single ground at the reference point of the application board to avoid fluctuations in the small-signal
ground caused by large currents. Also ensure that the ground traces of external components do not cause variations
on the ground voltage. The ground lines must be as short and thick as possible to reduce line impedance.
5.
6.
Recommended Operating Conditions
The function and operation of the IC are guaranteed within the range specified by the recommended operating
conditions. The characteristic values are guaranteed only under the conditions of each item specified by the electrical
characteristics.
Inrush Current
When power is first supplied to the IC, it is possible that the internal logic may be unstable and inrush current may flow
instantaneously due to the internal powering sequence and delays, especially if the IC has more than one power
supply. Therefore, give special consideration to power coupling capacitance, power wiring, width of ground wiring, and
routing of connections.
7.
8.
Operation Under Strong Electromagnetic Field
Operating the IC in the presence of a strong electromagnetic field may cause the IC to malfunction.
Testing on Application Boards
When testing the IC on an application board, connecting a capacitor directly to a low-impedance output pin may
subject the IC to stress. Always discharge capacitors completely after each process or step. The IC’s power supply
should always be turned off completely before connecting or removing it from the test setup during the inspection
process. To prevent damage from static discharge, ground the IC during assembly and use similar precautions during
transport and storage.
9.
Inter-pin Short and Mounting Errors
Ensure that the direction and position are correct when mounting the IC on the PCB. Incorrect mounting may result in
damaging the IC. Avoid nearby pins being shorted to each other especially to ground, power supply and output pin.
Inter-pin shorts could be due to many reasons such as metal particles, water droplets (in very humid environment) and
unintentional solder bridge deposited in between pins during assembly to name a few.
10. Unused Input Pins
Input pins of an IC are often connected to the gate of a MOS transistor. The gate has extremely high impedance and
extremely low capacitance. If left unconnected, the electric field from the outside can easily charge it. The small charge
acquired in this way is enough to produce a significant effect on the conduction through the transistor and cause
unexpected operation of the IC. So unless otherwise specified, unused input pins should be connected to the power
supply or ground line.
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Operational Notes – continued
11. Regarding the Input Pin of the IC
This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them
isolated. P-N junctions are formed at the intersection of the P layers with the N layers of other elements, creating a
parasitic diode or transistor. For example (refer to figure below):
When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.
When GND > Pin B, the P-N junction operates as a parasitic transistor.
Parasitic diodes inevitably occur in the structure of the IC. The operation of parasitic diodes can result in mutual
interference among circuits, operational faults, or physical damage. Therefore, conditions that cause these diodes to
operate, such as applying a voltage lower than the GND voltage to an input pin (and thus to the P substrate) should be
avoided.
Resistor
Transistor (NPN)
Pin A
Pin B
Pin B
B
E
C
Pin A
B
C
E
P
P+
P+
N
P+
P
P+
N
N
N
N
N
N
N
Parasitic
Elements
Parasitic
Elements
P Substrate
GND GND
P Substrate
GND
GND
Parasitic
Elements
Parasitic
Elements
N Region
close-by
Figure 68. Example of monolithic IC structure
12. Ceramic Capacitor
When using a ceramic capacitor, determine a capacitance value considering the change of capacitance with
temperature and the decrease in nominal capacitance due to DC bias and others.
13. Area of Safe Operation (ASO)
Operate the IC such that the output voltage, output current, and the maximum junction temperature rating are all within
the Area of Safe Operation (ASO).
14. Thermal Shutdown Circuit(TSD)
This IC has a built-in thermal shutdown circuit that prevents heat damage to the IC. Normal operation should always
be within the IC’s maximum junction temperature rating. If however the rating is exceeded for a continued period, the
junction temperature (Tj) will rise which will activate the TSD circuit that will turn OFF all output pins. When the Tj falls
below the TSD threshold, the circuits are automatically restored to normal operation.
Note that the TSD circuit operates in a situation that exceeds the absolute maximum ratings and therefore, under no
circumstances, should the TSD circuit be used in a set design or for any purpose other than protecting the IC from
heat damage.
15. Over Current Protection Circuit (OCP)
This IC incorporates an integrated overcurrent protection circuit that is activated when the load is shorted. This
protection circuit is effective in preventing damage due to sudden and unexpected incidents. However, the IC should
not be used in applications characterized by continuous operation or transitioning of the protection circuit.
16. Disturbance Light
In a device where a portion of silicon is exposed to light such as in a WL-CSP and chip products, IC characteristics
may be affected due to photoelectric effect. For this reason, it is recommended to come up with countermeasures that
will prevent the chip from being exposed to light.
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Ordering Information
B D 9 D 3 2 2 Q W Z -
E 2
Parts Number
Package
QWZ: UMMP008Z2020
Packaging and forming specification
E2: Embossed tape and reel
Marking Diagram
UMMP008Z2020 (TOP VIEW)
Part Number Marking
LOT Number
D 9 D
3 2 2
1PIN MARK
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Physical Dimension, Tape and Reel Information
Package Name
UMMP008Z2020
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TSZ22111•15•001
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Revision History
Date
Revision
Changes
07.Apr.2017
001
New Release
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Notice
Precaution on using ROHM Products
1. Our Products are designed and manufactured for application in ordinary electronic equipments (such as AV equipment,
OA equipment, telecommunication equipment, home electronic appliances, amusement equipment, etc.). If you
intend to use our Products in devices requiring extremely high reliability (such as medical equipment (Note 1), transport
equipment, traffic equipment, aircraft/spacecraft, nuclear power controllers, fuel controllers, car equipment including car
accessories, safety devices, etc.) and whose malfunction or failure may cause loss of human life, bodily injury or
serious damage to property (“Specific Applications”), please consult with the ROHM sales representative in advance.
Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way responsible or liable for any
damages, expenses or losses incurred by you or third parties arising from the use of any ROHM’s Products for Specific
Applications.
(Note1) Medical Equipment Classification of the Specific Applications
JAPAN
USA
EU
CHINA
CLASSⅢ
CLASSⅣ
CLASSⅡb
CLASSⅢ
CLASSⅢ
CLASSⅢ
2. ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor
products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate
safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which
a failure or malfunction of our Products may cause. The following are examples of safety measures:
[a] Installation of protection circuits or other protective devices to improve system safety
[b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure
3. Our Products are designed and manufactured for use under standard conditions and not under any special or
extraordinary environments or conditions, as exemplified below. Accordingly, ROHM shall not be in any way
responsible or liable for any damages, expenses or losses arising from the use of any ROHM’s Products under any
special or extraordinary environments or conditions. If you intend to use our Products under any special or
extraordinary environments or conditions (as exemplified below), your independent verification and confirmation of
product performance, reliability, etc, prior to use, must be necessary:
[a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents
[b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust
[c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2,
H2S, NH3, SO2, and NO2
[d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves
[e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items
[f] Sealing or coating our Products with resin or other coating materials
[g] Use of our Products without cleaning residue of flux (even if you use no-clean type fluxes, cleaning residue of
flux is recommended); or Washing our Products by using water or water-soluble cleaning agents for cleaning
residue after soldering
[h] Use of the Products in places subject to dew condensation
4. The Products are not subject to radiation-proof design.
5. Please verify and confirm characteristics of the final or mounted products in using the Products.
6. In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse. is applied,
confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power
exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect
product performance and reliability.
7. De-rate Power Dissipation depending on ambient temperature. When used in sealed area, confirm that it is the use in
the range that does not exceed the maximum junction temperature.
8. Confirm that operation temperature is within the specified range described in the product specification.
9. ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in
this document.
Precaution for Mounting / Circuit board design
1. When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product
performance and reliability.
2. In principle, the reflow soldering method must be used on a surface-mount products, the flow soldering method must
be used on a through hole mount products. If the flow soldering method is preferred on a surface-mount products,
please consult with the ROHM representative in advance.
For details, please refer to ROHM Mounting specification
Notice-PGA-E
Rev.003
© 2015 ROHM Co., Ltd. All rights reserved.
Precautions Regarding Application Examples and External Circuits
1. If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the
characteristics of the Products and external components, including transient characteristics, as well as static
characteristics.
2. You agree that application notes, reference designs, and associated data and information contained in this document
are presented only as guidance for Products use. Therefore, in case you use such information, you are solely
responsible for it and you must exercise your own independent verification and judgment in the use of such information
contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses
incurred by you or third parties arising from the use of such information.
Precaution for Electrostatic
This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper
caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be
applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron,
isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).
Precaution for Storage / Transportation
1. Product performance and soldered connections may deteriorate if the Products are stored in the places where:
[a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2
[b] the temperature or humidity exceeds those recommended by ROHM
[c] the Products are exposed to direct sunshine or condensation
[d] the Products are exposed to high Electrostatic
2. Even under ROHM recommended storage condition, solderability of products out of recommended storage time period
may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is
exceeding the recommended storage time period.
3. Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads
may occur due to excessive stress applied when dropping of a carton.
4. Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of
which storage time is exceeding the recommended storage time period.
Precaution for Product Label
A two-dimensional barcode printed on ROHM Products label is for ROHM’s internal use only.
Precaution for Disposition
When disposing Products please dispose them properly using an authorized industry waste company.
Precaution for Foreign Exchange and Foreign Trade act
Since concerned goods might be fallen under listed items of export control prescribed by Foreign exchange and Foreign
trade act, please consult with ROHM in case of export.
Precaution Regarding Intellectual Property Rights
1. All information and data including but not limited to application example contained in this document is for reference
only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any
other rights of any third party regarding such information or data.
2. ROHM shall not have any obligations where the claims, actions or demands arising from the combination of the
Products with other articles such as components, circuits, systems or external equipment (including software).
3. No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any
third parties with respect to the Products or the information contained in this document. Provided, however, that ROHM
will not assert its intellectual property rights or other rights against you or your customers to the extent necessary to
manufacture or sell products containing the Products, subject to the terms and conditions herein.
Other Precaution
1. This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM.
2. The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written
consent of ROHM.
3. In no event shall you use in any way whatsoever the Products and the related technical information contained in the
Products or this document for any military purposes, including but not limited to, the development of mass-destruction
weapons.
4. The proper names of companies or products described in this document are trademarks or registered trademarks of
ROHM, its affiliated companies or third parties.
Notice-PGA-E
Rev.003
© 2015 ROHM Co., Ltd. All rights reserved.
Daattaasshheeeett
General Precaution
1. Before you use our Pro ducts, you are requested to care fully read this document and fully understand its contents.
ROHM shall not be in an y way responsible or liable for failure, malfunction or accident arising from the use of a ny
ROHM’s Products against warning, caution or note contained in this document.
2. All information contained in this docume nt is current as of the issuing date and subj ect to change without any prior
notice. Before purchasing or using ROHM’s Products, please confirm the la test information with a ROHM sale s
representative.
3. The information contained in this doc ument is provi ded on an “as is” basis and ROHM does not warrant that all
information contained in this document is accurate an d/or error-free. ROHM shall not be in an y way responsible or
liable for any damages, expenses or losses incurred by you or third parties resulting from inaccuracy or errors of or
concerning such information.
Notice – WE
Rev.001
© 2015 ROHM Co., Ltd. All rights reserved.
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