BD9E151ANUX [ROHM]
BD9E151ANUX是内置对应28V高输入电压的功率MOSFET的二极管整流降压转换器。使用二极管整流，轻负载时脉冲可自动跳跃维持高效率。此外，关断时电源电流低至0μA，因此适用于电池驱动应用。可使用陶瓷电容器，并具有基于电流模式控制的高速负载响应和简便的外部设定相位补偿系统，可使用各种外接常数轻松制作小型电源。;
| 型号： | BD9E151ANUX |
| 厂家： | 
ROHM |
| 描述： | BD9E151ANUX是内置对应28V高输入电压的功率MOSFET的二极管整流降压转换器。使用二极管整流，轻负载时脉冲可自动跳跃维持高效率。此外，关断时电源电流低至0μA，因此适用于电池驱动应用。可使用陶瓷电容器，并具有基于电流模式控制的高速负载响应和简便的外部设定相位补偿系统，可使用各种外接常数轻松制作小型电源。 电池 驱动 脉冲 电容器 陶瓷电容器 二极管 转换器 |
| 文件： | 总25页 (文件大小：1610K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Datasheet
6 V to 28 V, 1.2 A 1ch
Step-Down Switching Regulator
Integrated Power MOSFET
BD9E151ANUX
General Description
Key Specifications
BD9E151ANUX is diode-rectification buck converter of
high input voltage 28 V with integrated Power MOSFET.
Because of diode-rectification, a pulse skips in light load
automatically and it maintains high efficiency. In addition,
it is available for battery powered application because
supply current is small with 0 uA at shutdown. It can easily
make a small power supply with the external parts of the
wide range, because the use of ceramic capacitor is
possible, and because it has high speed road response by
current mode control and has the external setting phase
compensation.
Input Voltage Range:
Reference Voltage Precision (Ta = 25 °C):1 V ± 1.0 %
Max Output Current:
Operating Temperature Range:
6 V to 28 V
1.2 A (Max)
-40 °C to +85 °C
Package
VSON008X2030
W (Typ) x D (Typ) x H (Max)
2.0 mm x 3.0 mm x 0.6 mm
Features
Wide Input Range (VIN = 6 V to 28 V)
30 V / 80 mΩ Integrated Power MOSFET
600 kHz (Typ) High Frequency Operation
Built in Reference Voltage (1.0 V ± 1.0 %)
Built in Over Current Protection (OCP), Under Voltage
Lockout (UVLO), Over Voltage Protection (OVP),
Thermal Shutdown (TSD)
Stand-by mode (IIN = 0 μA)
VSON008X2030 Small Package
Applications
Surveillance Camera Applications
Consumer 12 V, 24 V BUS-Line Systems
OA Applications
Typical Application Circuit
CBST: 0.1 μF
L: 15 μH
1
2
3
4
8
7
6
5
BST
VIN
EN
LX
GND
VC
VOUT
47 μF / 16 V
Cout
:
D1
CVIN: 10 μF / 35 V
VIN
ON/OFF
control
R1: 12 kΩ
C1: 10000 pF
SS
FB
R3: 2.7 kΩ
CSS:0.047 μF
R2: 3 kΩ
〇Product structure : Silicon integrated circuit 〇This product has no designed protection against radioactive rays.
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BD9E151ANUX
Pin Configuration
(TOP VIEW)
BST
1
2
3
4
8
7
6
5
LX
VIN
EN
SS
GND
VC
EXP-PAD
FB
Pin Descriptions
Pin No.
Pin Name
BST
VIN
Function
1
2
3
4
5
6
7
8
-
Bootstrap Capacitor Connecting Pin
Input Supply Pin
EN
EN Pin
SS
Soft Start Setting Pin
Feedback Input Pin
Error AMP Output Pin
Ground
FB
VC
GND
LX
Switching Pin
EXP-PAD
The EXP-PAD connect to GND
Block Diagram
ON/OFF
EN
VIN
TSD
UVLO
Reference
REG
VREF
Current Sense
AMP
shutdown
BST
LX
Current
Comparator
Error
AMP
FB
80 mΩ
-
+
+
-
1.0 V
VOUT
RꢀꢀQ
Sꢀꢀ
Σ
+
ꢀ
SS
Soft
Start
GND
Oscillator
VC
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Description of Blocks
1. Reference
This block generates reference voltage. It starts operation by EN pin High.
It provides reference voltage to error amplifier reference voltage 1.0 V (Typ), reference of oscillator, and etc.
2. REG
This is a gate drive and regulator for internal circuit power supply.
3. Oscillator
This is an oscillation circuit with operation frequency fixed to 600 kHz (Typ).
4. Soft Start
This is a circuit that gently raises the output voltage of the DC / DC converter to prevent in-rush current during start-up.
Soft start time is determined by the capacitor connected to SS pin and SS pin charge current.
5. Error AMP
This is an error amplifier circuit that detects the output signal, and outputs PWM control signal.
Internal reference voltage is set to 1.0 V (Typ).
6. OVP
Output voltage is monitored with the FB pin, and output FET is turned off when it becomes 110 % or more of setting
value.
When the output voltage becomes 105 % or less, it makes possible to turn on FET again.
7. Current Comparator
This is comparator that outputs PWM signal from current feed-back and error amp output for current mode.
8. OCP
Current flowing FET is monitored, and output FET is turned off when it detects over current 2.2 A (Typ).
When over current is detected for two consecutive cycles, the device is turned off with latch.
Then the SS pin voltage and VC pin voltage is reset, and the device is automatically restarted when the SS pin voltage
reaches 0.1 V.
9. Power MOSFET
This is power MOSFET with maximum voltage 30 V and on-resistance 80 mΩ.
It should be used within 1.6 A including ripple current of inductor because the current limiting of power MOSFET is 1.6 A.
10. UVLO
This is a low voltage error prevention circuit.
This prevents internal circuit error during increase and decrease of power supply voltage.
VIN pin voltage is monitored, and it turns off output FET and resets Soft Start circuit when VIN voltage becomes UVLO
detect threshold or less. UVLO detect threshold has hysteresis.
11. TSD
This is over thermal protection circuit.
When it detects the temperature exceeding maximum junction temperature (Tjmax = 150 °C), it turns off the output FET,
and resets Soft Start circuit. When the temperature decreased, It has hysteresis and the device is automatically
restarted.
12. EN
When Voltage 2.4 V or more is supplied to this pin, it turns on. When open or voltage 0.8V or less is supplied, it turns off.
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BD9E151ANUX
Absolute Maximum Ratings (Ta = 25 °C)
Parameter
Supply Voltage
Symbol
Rating
Unit
VIN
VBST
∆VBST
VEN
30
V
V
BST – GND
37
BST – LX
7
V
EN – GND
30
V
LX – GND
VLX
30
V
FB – GND
VFB
7
V
VC – GND
VVC
7
V
SS – GND
VSS
7
1.6
V
Power MOSFET Current
Maximum Junction Temperature
Storage Temperature Range
IDH
A
Tjmax
Tstg
150
°C
°C
-55 to +125
Caution 1: Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit
between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is
operated over the absolute maximum ratings.
Caution 2: Should by any chance the maximum junction temperature rating be exceeded the rise in temperature of the chip may result in deterioration of the
properties of the chip. In case of exceeding this absolute maximum rating, design a PCB with thermal resistance taken into consideration by
increasing board size and copper area so as not to exceed the maximum junction temperature rating.
Thermal Resistance (Note 1)
Thermal Resistance (Typ)
Parameter
Symbol
Unit
1s(Note 3)
2s2p(Note 4)
VSON008X2030
Junction to Ambient
Junction to Top Characterization Parameter(Note 2)
θJA
308.3
43
69.6
10
°C/W
°C/W
ΨJT
(Note 1) Based on JESD51-2A (Still-Air).
(Note 2) The thermal characterization parameter to report the difference between junction temperature and the temperature at the top center of the outside
surface of the component package.
(Note 3) Using a PCB board based on JESD51-3.
(Note 4) Using a PCB board based on JESD51-5, 7.
Layer Number of
Measurement Board
Material
Board Size
Single
FR-4
114.3 mm x 76.2 mm x 1.57 mmt
Top
Copper Pattern
Thickness
70 μm
Footprints and Traces
Thermal Via(Note 5)
Layer Number of
Measurement Board
Material
Board Size
114.3 mm x 76.2 mm x 1.6 mmt
2 Internal Layers
Pitch
Diameter
4 Layers
FR-4
1.20 mm
Φ0.30 mm
Top
Copper Pattern
Bottom
Thickness
70 μm
Copper Pattern
Thickness
35 μm
Copper Pattern
Thickness
70 μm
Footprints and Traces
74.2 mm x 74.2 mm
74.2 mm x 74.2 mm
(Note 5) This thermal via connects with the copper pattern of all layers. The arrangement should follow to land patterns.
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BD9E151ANUX
Recommended Operating Conditions
Parameter
Supply Voltage
Symbol
Min
6
Typ
Max
28
Unit
V
VIN
-
VIN x
0.7
or
1.0
Output Voltage
VOUT
-
V
(Note 6)
VIN – 5
(Note 7)
Output Current
IOUT
-
-
1.2
A
Operating Temperature
Topr
-40
+25
+85
°C
(Note 6) Restricted by minimum on pulse typ. 100 nsec.
(Note 7) Restricted by BSTUVLO or Max Duty Cycle (ref. p.14). Please set value of the low one for the maximum.
Electrical Characteristics (Unless otherwise specified VIN = 12 V, VOUT = 5 V, EN = 5 V, Ta = 25 °C)
Parameter
Circuit Current
Symbol
Min
Typ
Max
Unit
Conditions
Stand-by Current of VIN
Operating Circuit Current of VIN
Undervoltage Lockedout
Reset Threshold Voltage
Hysteresis Width
Oscillator
IST
IIN
-
-
0
10
μA
VEN = 0 V
0.8
1.6
mA
VFB = 1.5 V
VUV
5.0
5.4
5.8
V
VIN rising
VUVHY
-
200
400
mV
Oscillating Frequency
Max Duty Cycle
fSW
540
85
600
91
660
kHz
%
DMAX
-
Error AMP
FB Threshold Voltage
FB Input Current
VFBTH
IFB
0.990
1.000
0
1.010
1.0
V
-1.0
μA
VFB = 0 V
DC Gain
AVEA
GEA
-
-
600
250
6000
500
V/V
μA/V
Transconductance
Current Sense Amplifier
Transconductance
Output
IVC = ±10 μA, VVC = 1.0 V
GCS
-
10
20
A/V
High-Side Power MOSFET ON
Resistance
High-Side Over Current Detect
Current
RONH
IOCP
-
80
160
mΩ
A
1.6
2.2
-
CTL
ON
VENON
VENOFF
IEN
2.4
-0.3
6.0
-
-
VIN
0.8
V
V
Ta = -40 °C to +85 °C
VIN = 6 V to 28 V
EN Threshold Voltage
OFF
EN Input Current
SOFT START
7.0
15.0
μA
VEN = 5 V
Charge Current
ISS
1
2
4
μA
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BD9E151ANUX
Typical Performance Curves
(Unless otherwise specified VIN = 12 V, VOUT = 5 V, EN = 5 V, Ta = 25 °C)
2.0
1.6
1.2
0.8
0.4
0.0
2.0
1.6
1.2
0.8
0.4
0.0
6
8
10 12 14 16 18 20 22 24 26 28
-40
-15
10
35
60
85
Input Voltage : VIN[V]
Ambient Temperature : Ta[ºC]
Figure 1. Input Circuit Current vs Input Voltage
Figure 2. Input Circuit Current vs Ambient Temperature
640
630
620
610
600
590
580
570
560
550
540
6.0
VUV
5.6
5.2
VUV - VUVHY
4.8
4.4
4.0
-40
-15
10
35
60
85
-40
-15
10
35
60
85
Ambient Temperature : Ta[ºC]
Ambient Temperature : Ta[ºC]
Figure 3. UVLO Threshold vs Ambient Temperature
Figure 4. Oscillating Frequency vs Ambient Temperature
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BD9E151ANUX
Typical Performance Curves – Continued
(Unless otherwise specified VIN = 12 V, VOUT = 5 V, EN = 5 V, Ta = 25 °C)
100
96
92
88
84
80
1.020
1.015
1.010
1.005
1.000
0.995
0.990
0.985
0.980
6
8 10 12 14 16 18 20 22 24 26 28
-40
-15
10
35
60
85
Input Voltage : VIN[V]
Ambient Temperature : Ta[ºC]
Figure 5. Max Duty vs Ambient Temperature
Figure 6. FB Threshold Voltage vs Input Voltage
1.020
1.015
1.010
1.005
1.000
0.995
0.990
0.985
0.980
60
40
20
0
-20
-40
-60
-40
-15
10
35
60
85
0
0.4
0.8
1.2
1.6
2
Ambient Temperature : Ta[ºC]
FB Voltage : VFB[V]
Figure 7. FB Threshold Voltage vs Ambient Temperature
Figure 8. VC current vs FB Voltage
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BD9E151ANUX
Typical Performance Curves – Continued
(Unless otherwise specified VIN = 12 V, VOUT = 5 V, EN = 5 V, Ta = 25 °C)
4.0
3.2
2.4
1.6
0.8
0.0
160
140
120
100
80
60
40
20
0
-40
-15
10
35
60
85
-40
-15
10
35
60
85
Ambient Temperature : Ta[ºC]
Ambient Temperature : Ta[ºC]
Figure 9. SS Charge Current vs Ambient Temperature
Figure 10. High-Side FET Ron vs Ambient Temperature
4.0
3.2
2.4
1.6
0.8
0.0
2.0
1.8
1.6
1.4
1.2
1.0
-40
-15
10
35
60
85
-40
-15
10
35
60
85
Ambient Temperature : Ta[ºC]
Ambient Temperature : Ta[ºC]
Figure 12. EN Threshold Voltage vs Ambient Temperature
Figure 11. OCP Detect Current vs Ambient Temperature
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BD9E151ANUX
Typical Application
VIN = 12 V, VOUT = 5 V, IOUT = 1 A
C : 0.1 μF
BST
L: 15 μH
1
8
7
6
5
BST
VIN
EN
LX
GND
VC
VOUT
Cout
:
D1
CVIN:10 μF / 35 V
47 μF / 16 V
2
3
4
VIN
ON/OFF
control
R1: 12 kΩ
C1: 10000 pF
SS
FB
R3: 2.7 kΩ
CSS: 0.047 μF
R2: 3 kΩ
Figure 13. Typical Application Schematic (VOUT = 5 V)
When use in VIN < 7 V is assumed, it is recommended to add to pull-down resistance of about 1 kΩ to VOUT as shown above.
100
90
80
70
60
50
40
30
20
10
0
100
90
80
70
60
50
40
30
20
10
0
IOUT=1 A
VIN=8 V
IOUT=100 mA
VIN=12 V
VIN=25 V
IOUT=10 mA
1
10
100
1000
10000
0
5
10
15
20
25
30
Output Current IOUT[mA]
Input Voltage VIN[V]
Figure 14. Efficiency vs Output Current
Figure 15. Efficiency vs Input Voltage
Iout [1 A/div]
EN [10 V/div]
Overshoot = 268 mV
LX [10 V/div]
VOUT [2 V/div]
Vout [0.1 V/div]
Undershoot = 305 mV
1 ms/div
IOUT [0.2 A/div]
10 ms/div
Figure 16. Start-up Waveform
Figure 17. Load Transient Characteristic
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BD9E151ANUX
Typical Application – Continued
Phase
Gain
Figure 18. Frequency Characteristic (IOUT = 1 A)
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BD9E151ANUX
Typical Application – Continued
Application Parts List 1 (VIN = 12 V, VOUT = 5 V, IOUT = 1 A)
Symbol
[Capacitor]
CVIN
CSS
C1
Value
Parts name
Company
MURATA
MURATA
MURATA
MURATA
MURATA
10 μF / 35 V
GRM21BR6YA106KE43
GRM155R71E473JA88
GRM033B31E103KA12
GRM033B31A104ME84
GRM32EC81C476KE15
0.047 μF / 25 V
10000 pF / 25 V
0.1 μF / 10 V
47 μF / 16 V
CBST
COUT
[Resistor]
R3
R4
R5
2.7 kΩ
12 kΩ
3 kΩ
MCR03 series
MCR03 series
MCR03 series
ROHM
ROHM
ROHM
[Diode]
D
-
RSX201VAM-30
ROHM
[Inductor]
L
15 μH
NRS6045T150
TAIYO YUDEN
Application Parts List 2 (When load current is light and total area is important) (VIN = 12 V, VOUT = 5 V, IOU T = 300 mA)
Symbol
[Capacitor]
CVIN
CSS
C1
Value
Parts name
Company
10 μF / 25 V
GRM188R61E106MA73
GRM155R71E473JA88
GRM155R71H223JA61
GRM033B31A104ME84
GRM31CR71A226ME15
MURATA
0.047 uF / 25 V
22000 pF / 25 V
0.1 μF / 10 V
22 μF / 10 V
MURATA
MURATA
MURATA
MURATA
CBST
COUT
[Resistor]
R3
R4
R5
2.2 kΩ
12 kΩ
3 kΩ
MCR006 series
MCR006 series
MCR006 series
ROHM
ROHM
ROHM
[Diode]
D
-
RSX201VAM-30
ROHM
[Inductor]
L
15 μH
DEM3518C series
MURATA
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BD9E151ANUX
Selection of External Application Components
(1) Inductor
Shield type that meets the current rating (current value from the
IPEAK below), with low DCR (direct current resistance element) is
recommended. The value of inductor has an effect in the inductor ripple
current which causes the output ripple.
In the same formula below, this ripple current can be made small with
a large value L of inductor or as high as the switching frequency.
ΔIL
∆ꢀ
퐿
퐼푃퐸퐴퐾 = 퐼푂푈푇
+
(1)
(2)
2
Figure 19. Inductor Current
푉ꢀ푁−푉
ꢁ
푉
1
ꢂꢃꢄ
ꢂꢃꢄ
∆퐼ꢁ =
×
×
푉ꢀ푁
푓
푆푊
(∆IL: Output ripple current, VIN: Input voltage, fSW: Switching frequency)
For design value of inductor ripple , please carry out design tentatively with about 20 % to 50 % of maximum output
current.
(2) Output Capacitor
It is recommended a ceramic capacitor of low ESR for reducing output ripple.
Also, for capacitor rating, please use a capacitor that maximum rating has sufficient margin to the output voltage with
taking into consideration the DC bias characteristics.
Output ripple voltage is determined by following formula.
1
ꢅ푃푃 = ∆퐼ꢁ × 2휋×푓 ×퐶
+ ∆퐼ꢁ × 푅퐸ꢆꢇ
(3)
푆푊
ꢂꢃꢄ
Please set the value within allowable ripple voltage. It is recommended a ceramic capacitor 10 μF or more.
VOUT
(3) Output Voltage Setting
Error AMP internal reference voltage is 1.0 V.
Output voltage is determined by following formula.
Error AMP
R1
R2
FB
ꢅ푂푈푇
=
ꢇ1ꢈꢇ2 × ꢅꢇ퐸퐹
(4)
ꢇ2
(4) Bootstrap Capacitor
Please connect ceramic capacitor from 0.047 µF to 0.47 µF
between BST pin and LX pin.
VREF
1.0 V
Because the rating between BST pin and LX pin becomes 7 V,
it is recommended the proof pressure 10 V or more.
Figure 20. Output Voltage Setting
(5) Soft Start Function
BD9E151ANUX is not built in setting of soft start time.
It is necessary to set it by external capacitor CSS between SS pin and
GND to prevent rush current in the start-up.
BD9E151ANUX has the internal current source of 2 μA as charging current.
Soft start time (10 % to 90 %) is determined by following formula.
The ISS current is 2 uA.
2 μA
ERROR AMP
SS
Css
Figure 21. Soft Start Time Setting
퐶
×0.8
푆푆
ꢉ =
ꢆꢆ
(5)
ꢀ
푆푆
(6) Catch Diode
BD9E151ANUX needs to connect an external catch diode between LX and GND. It is necessary for the diode to choose
to satisfy absolute maximum ratings of the application. The reverse voltage must be higher than the maximum voltage
(VINMAX + 0.5 V) of the LX pin. The peak current needs to be larger than IOUTMAX + ∆IL.
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BD9E151ANUX
Selection of External Application Components – Continued
(7) Input Capacitor
BD9E151ANUX needs an input decoupling capacitor. It is recommended a low ESR ceramic capacitor of 10 uF or more.
The capacitor is selected considering DC bias effect and temperature characteristic. Please place this capacitor as
possible as close to the VIN pin.
The input ripple voltage is estimated by following formula.
ꢀ
푉
ꢂꢃꢄ × (ꢎ ꢏ 푉
)
(6)
ꢂꢃꢄ
ꢂꢃꢄ
∆ꢅ퐼ꢊ =
×
푓
×퐶
푉ꢀ푁
푉ꢀ푁
푆푊
ꢋꢌꢍ
CVIN is input capacitor value
It is necessary to confirm RMS ripple current. The RMS current is estimated by following formula.
푉
ꢂꢃꢄ × (ꢎ ꢏ 푉
)
(7)
ꢂꢃꢄ
√
퐼퐶푉ꢀ푁 = 퐼푂푈푇
×
푉ꢀ푁
푉ꢀ푁
ICVIN has maximum value when VIN = 2 × VOUT. The value is estimated by following formula.
ꢀ
ꢂꢃꢄ
퐼퐶푉ꢀ푁푀퐴푋
=
(8)
2
(8) About Adjustment of DC/DC Converter Frequency Characteristic
CBST
L
1
2
3
4
8
7
6
5
BST
VIN
EN
LX
GND
VC
VOUT
COUT
D1
CVIN
VIN
ON/OFF
control
R1
R2
C1
R3
C2
SS
FB
CSS
Figure 22. Role of Phase Compensation element
Stability and responsiveness of loop are controlled through the VC pin which is the output of Error AMP.
The characteristic of zero and pole that determines stability and responsiveness is adjusted by the combination of
resistor and capacitor that are connected in series to the VC pin. (C1, C2, R3)
DC gain of voltage return loop can be calculated by following formula.
푉
ꢑ퐵
ꢐ푑푐 = 푅푙 × 퐺퐶ꢆ × ꢐ퐸퐴
×
(9)
푉
ꢂꢃꢄ
VFB is feedback voltage (Typ: 1.0 V).
AEA is voltage gain of Error AMP (Typ: 60 dB).
GCS is transconductance of current detect (Typ: 10 A/V).
Rl is output load resistance value.
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Selection of External Application Components – Continued
There are 2 poles in the control loop of BD9E151ANUX.
The first occurs with through the output resistance of phase compensation capacitor (C1).
The other one occurs with through the output capacitor and load resistance.
These poles appear at the following frequency.
ꢓ
ꢔꢕ
ꢒ =
(10)
(11)
푃1
2휋×퐶1×퐴
ꢔꢕ
1
ꢒ =
푃2
2휋×퐶
×ꢇꢖ
ꢂꢃꢄ
where:
GEA is the transconductance of Error AMP (Typ: 250 μA/V).
This control loop has a zero.
The zero which occurs by phase compensation capacitor C1 and phase compensation resistance R3 appears at the
following frequency.
1
ꢒ =
푍1
(12)
2휋×퐶1×ꢇ3
Also, if output capacitor is large, and that ESR (RESR) is large, it has additional zero (ESR zero).
This ESR zero occurs by ESR of output capacitor and capacitance, and exists at the following frequency.
1
ꢒ
푍퐸ꢆꢇ
=
(ESR Zero)
(13)
2휋×퐶
×ꢇ
ꢔ푆ꢗ
ꢂꢃꢄ
In this case, the 3rd pole that determined with the 2nd phase compensation capacitor (C2 is the capacitor between VC
and GND) and phase correction resistance (R3) is used to correct the effect of ESR zero in the loop gain.
This pole exists at the following frequency.
1
ꢒ =
푃3
(Pole that corrects ESR Zero)
(14)
2휋×퐶2×ꢇ3
The target of phase compensation design is to have the necessary band width and phase margin.
Cross-over frequency (band width: fC) is set so that loop gain of return loop becomes zero.
When cross-over frequency becomes low, power supply fluctuation response and load response become worse.
When cross-over frequency becomes high, phase margin of the loop decreases.
To have the phase margin, cross-over frequency needs to set 1/20 of switching frequency or less.
Setting method of phase compensation value is shown below.
1. Phase compensation resistor (R3) matching the desired cross-over frequency is selected. R3 is calculated using
the following formula.
2휋×퐶
×푓
푉
ꢂꢃꢄ
ꢂꢃꢄ
ꢙ
푅ꢘ =
×
푉
ꢑ퐵
(15)
ꢓ
ꢔꢕ
×ꢓ
ꢙ푆
2. Phase compensation capacitor (C1) is selected. It has enough phase margin by matching zero of compensation to
1/4 or less of the cross-over frequency. C1 is calculated using the following formula.
4
ꢚꢎ >
(16)
2휋×ꢇ3×푓
ꢙ
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Selection of External Application Components – Continued
3. This is considered if the 2nd phase compensation capacitor C2 is need. If the ESR zero of output capacitor smaller
than half of the switching frequency, the 2nd phase compensation capacitor is necessary. In other words, it is the
case that the following formula holds.
1
푓
푆푊
<
ꢔ푆ꢗ
(17)
2휋×퐶
×ꢇ
2
ꢂꢃꢄ
In this case, add the second phase compensation capacitor C2, and match the frequency of the third pole to the
Frequency fp3 of ESR zero.
퐶
ꢂꢃꢄ
×ꢇ
ꢔ푆ꢗ
ꢚꢛ =
(18)
ꢇ3
Output Voltage Restriction
BD9E151ANUX have a function of BSTUVLO to prevent malfunction at low voltage between BST and LX. Therefore
OUTPUT voltage is restricted by BSTUVLO and Max Duty Cycle (Min 85 %).
5.5 V
1. Restriction by BSTUVLO
BST
When the voltage between BST and LX is lower than 2.5 V,
High-Side FET will be made turned off and the charge will provide
BSTUVLO
from VIN to BST directly to reset BSTUVLO (Path 1).
Path 1
The below formula is needed to be satisfied to reset BSTUVLO.
ꢅ퐼ꢊ ≥ ꢅ푂푈푇 + ꢅ퐹ꢜ푂푂푇 + ꢅꢜꢆ푇푈푉_ꢇꢆ푇
(19)
,
VIN
Here, BSTUVLO reset: BSTUVLO reset voltage,
VF: the diode forward bias voltage between VIN and BST
Considering the fluctuation of BSTUVLO reset voltage and VFBOOT
maximum voltage is less than 5 V.
LX
Therefore maximum output voltage is defined as VIN – 5 V.
Figure 23. BST charge pass
2. Restriction by Max Duty Cycle
Maximum output voltage is restricted by Max Duty Cycle (Min 85 %).In this time it is needed to consider the effect of
NchFET Ron, OUTPUT current and forward voltage of SBD. OUTPUT voltage can be calculated using the following
formula.
ꢝ
ꢞ
ꢅ푂푈푇_푀퐴푋 = ꢅ퐼ꢊ ꢏ 푅푂푁퐻 × 퐼푂푈푇 × ꢟ.ꢠ5 ꢏ ꢅ퐹 × ꢟ.ꢎ5
(20)
Therefore maximum output voltage is defined as VIN × 0.7.
Considering above restriction, adopt the lower voltage as maximum output voltage.
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BD9E151ANUX
Cautions on PCB Layout
TOP side
Ground Area
OUTPUT
Capacitor
VOUT
Catch
Diode
LX
VCC
SoftStart
Capacitor
Thermal VIA
Signal VIA
Figure 24. Reference PCB layout
Layout is a critical portion of good power supply design. There are several signals paths that conduct fast changing currents
or voltages that can interact with stray inductance or parasitic capacitance to generate noise or degrade the power supplies
performance. To help eliminate these problems, the VIN pin should be bypassed to ground with a low ESR ceramic bypass
capacitor with B dielectric. Care should be taken to minimize the loop area formed by the bypass capacitor connections, the
VIN pin, and the anode of the catch diode.
In the BD9E151ANUX, since the LX connection is the switching node, the catch diode and output inductor should be located
close to the LX pins, and the area of the PCB conductor minimized to prevent excessive capacitive coupling. And GND area
should not be connected directly power GND, connected avoiding the high current switch paths. The additional external
components can be placed approximately as shown.
Power Dissipation Estimation
The following formulas show how to estimate the device power dissipation under continuous mode operations. They should
not be used if the device is working in the discontinuous conduction mode.
2
⁄
1) Conduction loss：ꢡ푂푁 = 퐼푂푈푇 × 푅푂푁퐻 × ꢅ푂푈푇
ꢅ퐼ꢊ
2) Switching loss：ꢡ = ꢟ.ꢛ5 × ꢎꢟ−9 × ꢅ퐼ꢊ × 퐼푂푈푇 × ꢒ
ꢆꢢ
ꢆꢢ
3) Gate charge loss：ꢡꢓ = ꢛꢛ.ꢠ × ꢎꢟ−9 × ꢒ
ꢆꢢ
4) Quiescent current loss：ꢡ = ꢟ.7 × ꢎꢟ−3 × ꢅ퐼ꢊ
ꢀ퐶
IOUT is the output current (A), RONH is the on-resistance of the high-side MOSFET (Ω), VOUT is the output voltage (V), VIN is
the input voltage (V), fsw is the switching frequency (Hz).
Device power dissipation of IC (P) is the sum of above dissipation and estimated by following formula.
ꢡ = ꢡ푂푁 + ꢡ + ꢡꢓ + ꢡ
ꢆꢢ
ꢀ퐶
Junction temperature (Tj) is estimated by following formula.
ꢉ = ꢉ + 휃 × ꢡ
푗
푎
푗푎
θja is the thermal resistance of the package (℃).
Please consider thermal design with sufficient margin not to over Tjmax = 150 °C.
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BD9E151ANUX
I/O Equivalence Circuits
Pin
No.
Pin
Pin
No.
Pin
Pin Equivalent Circuit
Pin Equivalent Circuit
Name
Name
1
2
7
8
BST
VIN
GND
LX
BST
VIN
FB
5
FB
LX
GND
GND
EN
VC
3
EN
6
VC
GND
GND
SS
4
SS
GND
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BD9E151ANUX
Operational Notes
1.
2.
Reverse Connection of Power Supply
Connecting the power supply in reverse polarity can damage the IC. Take precautions against reverse polarity when
connecting the power supply, such as mounting an external diode between the power supply and the IC’s power
supply pins.
Power Supply Lines
Design the PCB layout pattern to provide low impedance supply lines. Furthermore, connect a capacitor to ground at
all power supply pins. Consider the effect of temperature and aging on the capacitance value when using electrolytic
capacitors.
3.
4.
Ground Voltage
Ensure that no pins are at a voltage below that of the ground pin at any time, even during transient condition.
Ground Wiring Pattern
When using both small-signal and large-current ground traces, the two ground traces should be routed separately but
connected to a single ground at the reference point of the application board to avoid fluctuations in the small-signal
ground caused by large currents. Also ensure that the ground traces of external components do not cause variations
on the ground voltage. The ground lines must be as short and thick as possible to reduce line impedance.
5.
6.
Recommended Operating Conditions
The function and operation of the IC are guaranteed within the range specified by the recommended operating
conditions. The characteristic values are guaranteed only under the conditions of each item specified by the electrical
characteristics.
Inrush Current
When power is first supplied to the IC, it is possible that the internal logic may be unstable and inrush current may flow
instantaneously due to the internal powering sequence and delays, especially if the IC has more than one power
supply. Therefore, give special consideration to power coupling capacitance, power wiring, width of ground wiring, and
routing of connections.
7.
Testing on Application Boards
When testing the IC on an application board, connecting a capacitor directly to a low-impedance output pin may
subject the IC to stress. Always discharge capacitors completely after each process or step. The IC’s power supply
should always be turned off completely before connecting or removing it from the test setup during the inspection
process. To prevent damage from static discharge, ground the IC during assembly and use similar precautions during
transport and storage.
8.
9.
Inter-pin Short and Mounting Errors
Ensure that the direction and position are correct when mounting the IC on the PCB. Incorrect mounting may result in
damaging the IC. Avoid nearby pins being shorted to each other especially to ground, power supply and output pin.
Inter-pin shorts could be due to many reasons such as metal particles, water droplets (in very humid environment) and
unintentional solder bridge deposited in between pins during assembly to name a few.
Unused Input Pins
Input pins of an IC are often connected to the gate of a MOS transistor. The gate has extremely high impedance and
extremely low capacitance. If left unconnected, the electric field from the outside can easily charge it. The small
charge acquired in this way is enough to produce a significant effect on the conduction through the transistor and
cause unexpected operation of the IC. So unless otherwise specified, unused input pins should be connected to the
power supply or ground line.
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BD9E151ANUX
Operational Notes – continued
10. Regarding the Input Pin of the IC
This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them
isolated. P-N junctions are formed at the intersection of the P layers with the N layers of other elements, creating a
parasitic diode or transistor. For example (refer to figure below):
When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.
When GND > Pin B, the P-N junction operates as a parasitic transistor.
Parasitic diodes inevitably occur in the structure of the IC. The operation of parasitic diodes can result in mutual
interference among circuits, operational faults, or physical damage. Therefore, conditions that cause these diodes to
operate, such as applying a voltage lower than the GND voltage to an input pin (and thus to the P substrate) should be
avoided.
Resistor
Transistor (NPN)
Pin A
Pin B
Pin B
B
E
C
Pin A
B
C
E
P
P+
P+
N
P+
P
P+
N
N
N
N
N
N
N
Parasitic
Elements
Parasitic
Elements
P Substrate
GND GND
P Substrate
GND
GND
Parasitic
Elements
Parasitic
Elements
N Region
close-by
Figure 25. Example of Monolithic IC Structure
11. Ceramic Capacitor
When using a ceramic capacitor, determine a capacitance value considering the change of capacitance with
temperature and the decrease in nominal capacitance due to DC bias and others.
12. Thermal Shutdown Circuit (TSD)
This IC has a built-in thermal shutdown circuit that prevents heat damage to the IC. Normal operation should always
be within the IC’s maximum junction temperature rating. If however the rating is exceeded for a continued period, the
junction temperature (Tj) will rise which will activate the TSD circuit that will turn OFF power output pins. When the Tj
falls below the TSD threshold, the circuits are automatically restored to normal operation.
Note that the TSD circuit operates in a situation that exceeds the absolute maximum ratings and therefore, under no
circumstances, should the TSD circuit be used in a set design or for any purpose other than protecting the IC from
heat damage.
13. Over Current Protection Circuit (OCP)
This IC incorporates an integrated overcurrent protection circuit that is activated when the load is shorted. This
protection circuit is effective in preventing damage due to sudden and unexpected incidents. However, the IC should
not be used in applications characterized by continuous operation or transitioning of the protection circuit.
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BD9E151ANUX
Ordering Information
B D 9 E 1 5 1 A N U X
-
T R
Package
NUX: VSON008X2030
Packaging and forming specification
TR: Embossed tape and reel
Marking Diagram
VSON008X2030 (TOP VIEW)
Part Number Marking
LOT Number
9 E 1
5 1 A
Pin 1 Mark
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BD9E151ANUX
Physical Dimension and Packing Information
Package Name
VSON008X2030
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BD9E151ANUX
Revision History
Date
Revision
001
Changes
25.Mar.2020
New Release
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Notice
Precaution on using ROHM Products
1. Our Products are designed and manufactured for application in ordinary electronic equipment (such as AV equipment,
OA equipment, telecommunication equipment, home electronic appliances, amusement equipment, etc.). If you
intend to use our Products in devices requiring extremely high reliability (such as medical equipment (Note 1), transport
equipment, traffic equipment, aircraft/spacecraft, nuclear power controllers, fuel controllers, car equipment including car
accessories, safety devices, etc.) and whose malfunction or failure may cause loss of human life, bodily injury or
serious damage to property (“Specific Applications”), please consult with the ROHM sales representative in advance.
Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way responsible or liable for any
damages, expenses or losses incurred by you or third parties arising from the use of any ROHM’s Products for Specific
Applications.
(Note1) Medical Equipment Classification of the Specific Applications
JAPAN
USA
EU
CHINA
CLASSⅢ
CLASSⅣ
CLASSⅡb
CLASSⅢ
CLASSⅢ
CLASSⅢ
2. ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor
products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate
safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which
a failure or malfunction of our Products may cause. The following are examples of safety measures:
[a] Installation of protection circuits or other protective devices to improve system safety
[b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure
3. Our Products are designed and manufactured for use under standard conditions and not under any special or
extraordinary environments or conditions, as exemplified below. Accordingly, ROHM shall not be in any way
responsible or liable for any damages, expenses or losses arising from the use of any ROHM’s Products under any
special or extraordinary environments or conditions. If you intend to use our Products under any special or
extraordinary environments or conditions (as exemplified below), your independent verification and confirmation of
product performance, reliability, etc, prior to use, must be necessary:
[a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents
[b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust
[c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2,
H2S, NH3, SO2, and NO2
[d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves
[e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items
[f] Sealing or coating our Products with resin or other coating materials
[g] Use of our Products without cleaning residue of flux (Exclude cases where no-clean type fluxes is used.
However, recommend sufficiently about the residue.) ; or Washing our Products by using water or water-soluble
cleaning agents for cleaning residue after soldering
[h] Use of the Products in places subject to dew condensation
4. The Products are not subject to radiation-proof design.
5. Please verify and confirm characteristics of the final or mounted products in using the Products.
6. In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse, is applied,
confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power
exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect
product performance and reliability.
7. De-rate Power Dissipation depending on ambient temperature. When used in sealed area, confirm that it is the use in
the range that does not exceed the maximum junction temperature.
8. Confirm that operation temperature is within the specified range described in the product specification.
9. ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in
this document.
Precaution for Mounting / Circuit board design
1. When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product
performance and reliability.
2. In principle, the reflow soldering method must be used on a surface-mount products, the flow soldering method must
be used on a through hole mount products. If the flow soldering method is preferred on a surface-mount products,
please consult with the ROHM representative in advance.
For details, please refer to ROHM Mounting specification
Notice-PGA-E
Rev.004
© 2015 ROHM Co., Ltd. All rights reserved.
Precautions Regarding Application Examples and External Circuits
1. If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the
characteristics of the Products and external components, including transient characteristics, as well as static
characteristics.
2. You agree that application notes, reference designs, and associated data and information contained in this document
are presented only as guidance for Products use. Therefore, in case you use such information, you are solely
responsible for it and you must exercise your own independent verification and judgment in the use of such information
contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses
incurred by you or third parties arising from the use of such information.
Precaution for Electrostatic
This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper
caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be
applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron,
isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).
Precaution for Storage / Transportation
1. Product performance and soldered connections may deteriorate if the Products are stored in the places where:
[a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2
[b] the temperature or humidity exceeds those recommended by ROHM
[c] the Products are exposed to direct sunshine or condensation
[d] the Products are exposed to high Electrostatic
2. Even under ROHM recommended storage condition, solderability of products out of recommended storage time period
may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is
exceeding the recommended storage time period.
3. Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads
may occur due to excessive stress applied when dropping of a carton.
4. Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of
which storage time is exceeding the recommended storage time period.
Precaution for Product Label
A two-dimensional barcode printed on ROHM Products label is for ROHM’s internal use only.
Precaution for Disposition
When disposing Products please dispose them properly using an authorized industry waste company.
Precaution for Foreign Exchange and Foreign Trade act
Since concerned goods might be fallen under listed items of export control prescribed by Foreign exchange and Foreign
trade act, please consult with ROHM in case of export.
Precaution Regarding Intellectual Property Rights
1. All information and data including but not limited to application example contained in this document is for reference
only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any
other rights of any third party regarding such information or data.
2. ROHM shall not have any obligations where the claims, actions or demands arising from the combination of the
Products with other articles such as components, circuits, systems or external equipment (including software).
3. No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any
third parties with respect to the Products or the information contained in this document. Provided, however, that ROHM
will not assert its intellectual property rights or other rights against you or your customers to the extent necessary to
manufacture or sell products containing the Products, subject to the terms and conditions herein.
Other Precaution
1. This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM.
2. The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written
consent of ROHM.
3. In no event shall you use in any way whatsoever the Products and the related technical information contained in the
Products or this document for any military purposes, including but not limited to, the development of mass-destruction
weapons.
4. The proper names of companies or products described in this document are trademarks or registered trademarks of
ROHM, its affiliated companies or third parties.
Notice-PGA-E
Rev.004
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Daattaasshheeeett
General Precaution
1. Before you use our Products, you are requested to carefully read this document and fully understand its contents.
ROHM shall not be in any way responsible or liable for failure, malfunction or accident arising from the use of any
ROHM’s Products against warning, caution or note contained in this document.
2. All information contained in this document is current as of the issuing date and subject to change without any prior
notice. Before purchasing or using ROHM’s Products, please confirm the latest information with a ROHM sales
representative.
3. The information contained in this document is provided on an “as is” basis and ROHM does not warrant that all
information contained in this document is accurate and/or error-free. ROHM shall not be in any way responsible or
liable for any damages, expenses or losses incurred by you or third parties resulting from inaccuracy or errors of or
concerning such information.
Notice – WE
Rev.001
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BD9E300EFJ-LB(E2)
本产品是面向工业设备市场的产品，保证可长期稳定供货。BD9E300EFJ-LB是内置低导通电阻的功率MOSFET的同步整流降压型开关稳压器。输入电压范围大(7V～36V)，可生成5.0V等低电压。振荡频率1MHz的高速产品，适用于小型电感。是电流模式控制DC/DC转换器，具有高速瞬态响应性能，可轻松设定相位补偿。BD9E300EFJ-LB也备有250个装的小批量卷轴产品→BD9E300EFJ-LBH2a.productlink{color: #dc2039; text-decoration: underline !important;}a.productlink:hover {opacity: 0.6;}
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BD9E300EFJ-LB(H2)
本产品是面向工业设备市场的产品，保证可长期稳定供货。BD9E300EFJ-LB是内置低导通电阻的功率MOSFET的同步整流降压型开关稳压器。输入电压范围大(7V～36V)，可生成5.0V等低电压。振荡频率1MHz的高速产品，适用于小型电感。是电流模式控制DC/DC转换器，具有高速瞬态响应性能，可轻松设定相位补偿。
ROHM
BD9E300EFJ-LBH2
7.0V to 36V Input, 2.5A Integrated MOSFET Single Synchronous Buck DC/DC Converter
ROHM
BD9E300UEFJ-LB(E2) (新产品)
This product guarantees long life cycle in Industrial market. BD9E300UEFJ-LB(E2) is a synchronous
ROHM
BD9E300UEFJ-LB(H2) (新产品)
This product guarantees long life cycle in Industrial market. BD9E300UEFJ-LB(H2) is a synchronous buck switching regulator with built-in power MOSFETs. It is capable of an output current of up to 2.5A. It has a high oscillation frequency of 1MHz while using small inductance value. It is a current mode control DC/DC converter and features high-speed transient response. Phase compensation can also be set easily.This IC uses different production line against series model BD9E300EFJ-LB for the purpose of improving production efficiency. We recommend using this IC for your new development. Electric characteristics noted in Datasheet does not differ between Production Line. In addition, the data of BD9E300EFJ-LB is disclosed for documents and design models unless otherwise specified.
ROHM
BD9E301EFJ-LB
7.0V to 36V Input, 2.5A Integrated MOSFET Single Synchronous Buck DC/DC Converter
ROHM
BD9E301EFJ-LB(E2)
本产品是面向工业设备市场的产品，保证可长期稳定供货。BD9E301EFJ-LB是内置低导通电阻的功率MOSFET的同步整流降压型开关稳压器。输入电压范围大(7V～36V)，可生成5.0V等低电压。是电流模式控制DC/DC转换器，具有高速瞬态响应性能，可轻松设定相位补偿。BD9E301EFJ-LB也备有250个装的小批量卷轴产品→BD9E301EFJ-LBH2a.productlink{color: #dc2039; text-decoration: underline !important;}a.productlink:hover {opacity: 0.6;}
ROHM
BD9E301EFJ-LB(H2)
本产品是面向工业设备市场的产品，保证可长期稳定供货。BD9E301EFJ-LB是内置低导通电阻的功率MOSFET的同步整流降压型开关稳压器。输入电压范围广(7V～36V)，可生成5.0V等低电压。是电流模式控制DC/DC转换器，具有高速瞬态响应性能，可轻松设定相位补偿。
ROHM
BD9E301EFJ-LBH2
7.0V to 36V Input, 2.5A Integrated MOSFET Single Synchronous Buck DC/DC Converter
ROHM
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