BD9F800MUX-Z [ROHM]
BD9F800MUX是内置低导通电阻的功率MOSFET的同步整流降压DC/DC转换器。最大可输出8A的电流。还是恒定时间控制DC/DC转换器，具有高速负载响应性能，无需外接的相位补偿电路。Power Supply Reference BoardFor Xilinx’s FPGA Spartan-7;
| 型号： | BD9F800MUX-Z |
| 厂家： | 
ROHM |
| 描述： | BD9F800MUX是内置低导通电阻的功率MOSFET的同步整流降压DC/DC转换器。最大可输出8A的电流。还是恒定时间控制DC/DC转换器，具有高速负载响应性能，无需外接的相位补偿电路。Power Supply Reference BoardFor Xilinx’s FPGA Spartan-7 转换器 |
| 文件： | 总50页 (文件大小：4157K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Datasheet
4.5V to 28V Input, 8.0A Integrated MOSFET
Single Synchronous Buck DC/DC Converter
BD9F800MUX-Z
General Description
Key Specifications
BD9F800MUX-Z is a synchronous buck DC/DC converter
with built-in low on-resistance power MOSFETs. It is
capable of providing current of up to 8 A. External phase
compensation circuit is not necessary for it is a constant
on-time control DC/DC converter with high speed
response.
Input Voltage Range:
Output Voltage Setting Range:
Output Current:
Switching Frequency:
High Side MOSFET On-Resistance: 23 m Ω (Typ)
Low Side MOSFET On-Resistance: 11 m Ω (Typ)
4.5V to 28 V
0.765V to 13.5V
8 A (Max)
300kHz or 600kHz (Typ)
Shutdown Current:
2 μA (Typ)
Features
Package
VQFN11X3535A
W (Typ) × D (Typ) × H (Max)
3.50mm × 3.50mm × 0.60mm
Synchronous Single DC/DC Converter
Constant On-time Control
Over Current Protection
Short Circuit Protection
Thermal Shutdown Protection
Under Voltage Lockout Protection
Power Good Output
VQFN11X3535A Package
Applications
Step-down Power Supply for DSPs,
Microprocessors, etc.
Set-top Box
LCD TVs
DVD / Blu-ray Player / Recorder
Entertainment Devices
VQFN11X3535A
Typical Application Circuit
BD9F800MUX-Z
VIN
VIN
BOOT
SW
CIN
Enable
EN
CBOOT
L
PGND
VOUT
FREQ
VOUT
FB
R1
R2
RFREQ
CVREG
VREG
PGD
COUT
GND
Figure 1. Typical Application Circuit
○Product structure: Silicon monolithic integrated circuit ○This product has no designed protection against radioactive rays.
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BD9F800MUX-Z
Pin Configuration
(TOP VIEW)
7. GND
8. VIN
11. EN
9. SW
10. PGND
Figure 2. Pin Configuration
Function
Pin Descriptions
Terminal
Symbol
No.
Bootstrap terminal.
Connect a ceramic capacitor of 0.1µF between BOOT and SW terminal.
The voltage of this capacitor is the gate drive voltage of the High-Side MOSFET.
1
BOOT
PGD
VOUT
FREQ
FB
Power Good terminal. It is necessary to connect a pull-up resistor due to an open drain
output. See page 19 for how to specify the resistance. When the FB terminal voltage is within
±7% of 0.765V (Typ), the internal Nch MOSFET turns off and the output turns High.
2
3
Output voltage sense terminal.
Connect a 10Ω resistor in series when output voltage setting is more than 3.3V.
Switching frequency setting terminal.
Switching frequency is set to 300kHz when this terminal is set to Low (0.8V or lower). Setting
this terminal to High (2.2V or higher) will make switching frequency set to 600kHz. This
terminal needs to be pulled down to ground or pulled up to VREG by 10kΩ.
4
An inverting input node for the error amplifier and main comparator.
To calculate for the resistance value of the output voltage setting, refer to page 39.
5
Internal power supply voltage terminal.
6
VREG
GND
VIN
A voltage of 5.25V (Typ) is outputted if there is more than 2.3V for EN terminal.
Connect a ceramic capacitor of 2.2µF to ground.
7
Ground terminal for the control circuit.
Power supply terminal for the switching regulator.
Connecting 20µF(10µF×2) and 0.1µF ceramic capacitor to ground is recommended.
8
Switch terminal. The SW terminal is connected to the source of the High-Side MOSFET and
drain of the Low-Side MOSFET. Connect a bootstrap capacitor of 0.1µF between BOOT and
SW terminal. Also, connect an inductor considering the direct current superimposition
characteristic.
9
SW
10
11
PGND
EN
Ground terminal for the output stage of the switching regulator.
Enable terminal.
Turning this terminal signal Low (0.7V or lower) forces the device to enter in shutdown mode.
Turning this terminal signal High (2.3V or higher) enables the device. This terminal must be
properly terminated.
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BD9F800MUX-Z
Block Diagram
EN
11
VREG
6
VIN
8
VIN
VREG
EN
VREG
SW
EN
VREG
VREF
REF
VREF
1
9
BOOT
SW
OCPH
Q
R
On Time
Controller
Block
FREQ
VOUT
4
3
Driver
Circuit
EN
S
VREG
Error
Amplifier
SW
Main
Comparator
OCPL
REF
SS
FB 5
PGND
PGD
10
UVLO
UVLO
UVLO
TSD
2
SCP
SCP
FB
VREF
Thermal
Protection
PGOOD
TSD
EN
UVLO
TSD
SCP
Soft
Start
SS
7
GND
Figure 3. Block Diagram
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BD9F800MUX-Z
Description of Blocks
●
EN
The device will shut down when EN falls to 0.7V (Max) or lower. When EN reaches 2.3V (Min), the internal circuit is
activated and the device starts up.
●
●
●
●
VREG
The VREG block generates the internal power supply.
VREF
The VREF block generates the internal reference voltage.
Error Amplifier
Error Amplifier adjusts Main Comparator input to make internal reference voltage equal to FB terminal voltage.
Main Comparator
Main comparator compares Error Amplifier output and FB terminal voltage. When FB terminal voltage becomes low, it
outputs High and reports to the On Time block that the output voltage has dropped below control voltage.
●
●
●
ON Time Controller Block
This block generates ON Time. The desired ON Time is generated when Main Comparator output becomes High. ON
Time is adjusted to restrict frequency change even with Input / Output voltage change.
Soft Start
The Soft Start circuit slows down the rise of output voltage during start-up and controls the current, which allows the
prevention of output voltage overshoot and inrush current. The internal soft start time is set to 1ms typically.
PGOOD
When the FB terminal voltage reaches within ±7% of 0.765V(Typ), the built-in open drain output Nch MOSFET turns
off and the output goes high.
●
●
Driver Circuit
This block is a DC/DC driver. A signal from ON Time Controller Block is applied to drive the MOSFETs.
UVLO
UVLO is a protection circuit that prevents low voltage malfunction. It prevents malfunction of the internal circuit from
sudden rise and fall of power supply voltage. When VIN voltage is higher than 4.2V (Typ), UVLO is released and the
soft-start circuit will be started. This threshold voltage has a hysteresis of 400mV (Typ). When VIN voltage is less than
3.8V (Typ), the device will shut down.
●
TSD
The TSD block is for thermal protection. The thermal protection circuit shuts down the device when the internal
temperature of device rises to 175°C (Typ) or higher. Thermal protection circuit resets when the temperature falls. The
circuit has a hysteresis of 25°C (Typ).
●
●
●
SCP
After the soft start is completed and when the FB terminal voltage has fallen below 0.38V (Typ) for 250μs (Typ), the
SCP stops the operation for 8ms (Typ) and subsequently initiates restart.
OCPH
When inductor current exceeds the current limit threshold value while High-Side MOSFET is ON, the High-Side
MOSFET will turn OFF.
OCPL
The OCP function limits the current flowing through the Low-Side MOSFET for every switching period. If the inductor
current exceeds the source current limit threshold value IOCP while Low-Side MOSFET is ON, the Low-Side MOSFET
remains ON even with FB voltage is lower than the REF voltage. The Low-Side MOSFET keeps ON until inductor
current becomes lower than IOCP and High-Side MOSFET will turn ON. The Low-Side MOSFET will turn OFF when
inductor current exceeds the sink current limit threshold value while Low-Side MOSFET is ON.
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BD9F800MUX-Z
Absolute Maximum Ratings (Ta = 25C)
Parameter
Symbol
VIN
Rating
-0.3 to +30
-0.3 to +35
-0.3 to +7
Unit
V
Input Voltage
Voltage from GND to BOOT
Voltage from SW to BOOT
SW Terminal Voltage
VBOOT
VBOOT - VSW
VSW
V
V
-0.3 to VIN + 0.3
-0.3 to VVREG
-0.3 to +6
V
FB Terminal Voltage
VFB
V
VREG Terminal Voltage
FREQ Terminal Voltage
VVREG
VFREQ
VVOUT
VPGD
V
-0.3 to +7
V
VOUT Terminal Voltage
PGD Terminal Voltage
-0.3 to +20
-0.3 to +35
-0.3 to +30
150
V
V
EN Terminal Voltage
VEN
V
Maximum Junction Temperature
Storage Temperature Range
Tjmax
Tstg
°C
°C
-55 to +150
Caution 1: Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit
between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is operated over
the absolute maximum ratings.
Caution 2: Should by any chance the maximum junction temperature rating be exceeded the rise in temperature of the chip may result in deterioration of the
properties of the chip. In case of exceeding this absolute maximum rating, increase the board size and copper area to prevent exceeding the maximum junction
temperature rating.
Thermal Resistance(Note 1)
Thermal Resistance (Typ)
Parameter
Symbol
Unit
1s(Note 3)
2s2p(Note 4)
VQFN11X3535A
Junction to Ambient
Junction to Top Characterization Parameter(Note 2)
θJA
232.1
44.2
48.0
8.2
°C/W
°C/W
ΨJT
(Note 1) Based on JESD51-2A(Still-Air).
(Note 2) The thermal characterization parameter to report the difference between junction temperature and the temperature at the top center of the outside
surface of the component package.
(Note 3) Using a PCB board based on JESD51-3.
Layer Number of
Measurement Board
Material
FR-4
Board Size
Single
114.3mm x 76.2mm x 1.57mmt
Top
Copper Pattern
Thickness
Footprints and Traces
70μm
(Note 4) Using a PCB board based on JESD51-7.
Thermal Via(Note 5)
Layer Number of
Material
Board Size
114.3mm x 76.2mm x 1.6mmt
2 Internal Layers
Measurement Board
Pitch
Diameter
4 Layers
FR-4
1.20mm
Φ0.30mm
Top
Bottom
Copper Pattern
Thickness
Copper Pattern
Thickness
Copper Pattern
Thickness
70μm
Footprints and Traces
70μm
74.2mm x 74.2mm
35μm
74.2mm x 74.2mm
(Note 5) This thermal via connects with the copper pattern of all layers.
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BD9F800MUX-Z
Recommended Operating Conditions
Parameter
Symbol
VIN
Min
Typ
Max
28
+85 (Note 1)
Unit
V
Input Voltage
4.5
12
-
Operating Temperature Range
Output Current
Topr
-40
0
°C
A
IOUT
-
8
0.765 (Note 2)
-
13.5 (Note 3)
V
Output Voltage Range
VRANGE
(Note 1) Tj must be lower than 150°C under actual operating environment. Life time is derated at junction temperature greater than125°C.
(Note 2) Please use under the condition of VOUT≥VIN×0.033 [V] (300kHz), VOUT ≥VIN×0.067 [V] (600kHz).
(Note 3) Please use under the condition of VOUT≤VIN×0.87-0.12×IOUT [V](300kHz), VOUT ≤VIN×0.77-0.13×IOUT [V](600kHz).
(Refer to the page 39 for how to calculate the output voltage setting.)
Electrical Characteristics (Ta = 25°C, VIN = 12V, VEN = 3V, FREQ=L unless otherwise specified)
Parameter
Symbol
Min
Typ
Max
Unit
Conditions
VEN=GND
Shutdown Current
ISD
-
2
15
µA
IOUT=0mA
when no switching
Operating Circuit Current
IVIN
-
0.85
1.6
mA
EN Low Voltage
VENL
VENH
-
-
-
0.7
VIN
10
V
V
EN High Voltage
2.3
EN Input Current
IEN
-
2.5
-
µA
V
VEN=3V
FREQ Low Voltage
FREQ High Voltage
FREQ Input Current
VREG Shutdown Voltage
VREG Output Voltage
VREG Output Current
UVLO Threshold Voltage
UVLO Hysteresis Voltage
FB Terminal Voltage
FB Input Bias Current
Soft Start Time
VFREQL
VFREQH
IFREQ
-
0.8
VVREG
5
2.2
-
V
-
1.5
-
µA
V
VFREQ=3V
VEN=GND
VVREG_SD
VVREG
IREG
-
5
0.1
5.5
-
5.25
10
4.2
400
0.765
-
V
-
mA
V
VUVLO
VUVLO_HYS
VFB
3.9
200
0.757
-
4.5
600
0.773
1
VIN:Sweep up
mV
V
VIN=12V, VOUT=1.0V
IFB
µA
ms
tSS
0.5
1
2
VIN=12V, VOUT=1.0V,
FREQ=L
VIN=12V, VOUT=1.0V,
FREQ=H
On Time1
On Time2
tON1
-
-
277
150
-
-
ns
ns
tON2
tMINOFF
RONH
Minimum Off Time
-
250
23
-
-
ns
mΩ
mΩ
A
High Side FET ON Resistance
Low Side FET ON Resistance
Current Limit Threshold
-
-
RONL
11
-
(Note 4)
IOCP
-
11.5
90
-
Power Good Falling (Fault) Voltage
Power Good Rising (Good) Voltage
Power Good Rising (Fault) Voltage
Power Good Falling (Good) Voltage
Power Good Output Leakage Current
Power Good ON Resistance
Hiccup Threshold Voltage
VPGDFF
VPGDRG
VPGDRF
VPGDFG
ILKPGD
RPGD
87
90
107
104
-
93
96
113
110
5
%
FB falling
FB rising
FB rising
FB falling
PGD= 5V
93
%
110
107
0
%
%
µA
Ω
-
500
0.38
250
1000
0.5
-
VHCP
0.26
-
V
FB Terminal
Hiccup Delay Time
tHCPDLY
µs
(Note 4) No tested on outgoing inspection.
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BD9F800MUX-Z
Typical Performance Curves
15
1600
1400
1200
1000
800
600
400
200
0
14
VIN=12V
VIN=12V
13
12
11
10
9
8
7
6
5
4
3
2
1
0
-40
-20
0
20
40
60
80
-40
-20
0
20
40
60
80
Temperature [°C]
Temperature [°C]
Figure 5. Operating Supply Current vs Temperature
Figure 4. Shutdown Current vs Temperature
10
8
2.2
VIN=12V, VEN=3V
2
1.8
1.6
1.4
1.2
1
Sweep Up
6
Sweep Down
4
0.8
0.6
0.4
0.2
0
2
0
-40
-20
0
20
40
60
80
-40
-20
0
20
40
60
80
Temperature [°C]
Temperature [°C]
Figure 6. EN Threshold Voltage vs Temperature
Figure 7. EN Input Current vs Temperature
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BD9F800MUX-Z
Typical Performance Curves - continued
50
40
30
20
10
0
2.2
2
VIN=12V
1.8
1.6
1.4
1.2
1
Sweep Up
Sweep Down
0.8
-40
-20
0
20
40
60
80
0
5
10
15
20
25
30
Temperature [°C]
EN Voltage : VEN[V]
Figure 9. FREQ Threshold Voltage vs Temperature
Figure 8. EN Input Current vs EN Voltage
5
4.5
4
5.5
VIN=12V, VFREQ=3V
VIN=12V
5.45
5.4
5.35
5.3
3.5
3
5.25
5.2
2.5
2
5.15
5.1
1.5
1
5.05
5
0.5
0
-40
-20
0
20
40
60
80
-40
-20
0
20
40
60
80
Temperature [°C]
Temperature [°C]
Figure 10. FREQ Input Current vs Temperature
Figure 11. VREG Output Voltage vs Temperature
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BD9F800MUX-Z
Typical Performance Curves - continued
4.5
4.4
4.3
4.2
4.1
4
600
500
400
300
200
3.9
-40
-20
0
20
40
60
80
-40
-20
0
20
40
60
80
Temperature [°C]
Temperature [°C]
Figure 13. UVLO Hysteresis Voltage vs Temperature
Figure 12. UVLO Threshold Voltage vs Temperature
0.773
1
0.8
0.6
0.4
0.2
0
VIN=12V
VIN=12V
0.771
0.769
0.767
0.765
0.763
0.761
0.759
0.757
-40
-20
0
20
40
60
80
-40
-20
0
20
40
60
80
Temperature [°C]
Temperature [°C]
Figure 15. FB Input Current vs Temperature
Figure 14. FB Terminal Voltage vs Temperature
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BD9F800MUX-Z
Typical Performance Curves - continued
2
320
300
280
260
240
220
VIN=12V
VIN=12V, VOUT=1V
1.5
1
0.5
0
-40
-20
0
20
40
60
80
-40
-20
0
20
40
60
80
Temperature [°C]
Temperature [°C]
Figure 17. On Time 1 vs Temperature
Figure 16. Soft Start Time vs Temperature
180
400
300
200
100
0
VIN=12V, VOUT=1V
VIN=12V
170
160
150
140
130
120
-40
-20
0
20
40
60
80
-40
-20
0
20
40
60
80
Temperature [°C]
Temperature [°C]
Figure 18. On Time 2 vs Temperature
Figure 19. Minimum Off Time vs Temperature
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BD9F800MUX-Z
Typical Performance Curves - continued
25
20
15
10
5
50
VIN=12V
VIN=12V
40
30
20
10
0
0
-40
-20
0
20
40
60
80
-40
-20
0
20
40
60
80
Temperature[°C]
Temperature [°C]
Figure 21. Low Side FET ON Resistance vs Temperature
Figure 20. High Side FET ON Resistance vs Temperature
96
113
VIN=12V
95
VIN=12V
112
111
94
Rising Good
93
Rising Fault
110
92
91
90
109
108
107
Falling Good
106
Falling Fault
89
88
105
87
104
-40
-20
0
20
40
60
80
-40
-20
0
20
40
60
80
Temperature[°C]
Temperature [°C]
Figure 22. Power Good Threshold Voltage vs Temperature
Figure 23. Power Good Threshold Voltage vs Temperature
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BD9F800MUX-Z
Typical Performance Curves - continued
1
1000
900
800
700
600
500
400
300
200
100
0
VIN=12V, VPGD=5V
VIN=12V
0.8
0.6
0.4
0.2
0
-40
-20
0
20
40
60
80
-40
-20
0
20
40
60
80
Temperature [°C]
Temperature[°C]
Figure 24. Power Good Output Leakage Current vs Temperature
Figure 25. Power Good ON Resistance vs Temperature
0.5
500
VIN=12V
VIN=12V
450
400
350
300
250
200
150
100
50
0.46
0.42
0.38
0.34
0.3
0.26
0
-40
-20
0
20
40
60
80
-40
-20
0
20
40
60
80
Temperature[°C]
Temperature [°C]
Figure 27. Hiccup Delay Time vs Temperature
Figure 26. Hiccup Threshold Voltage vs Temperature
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BD9F800MUX-Z
Typical Performance Curves - continued
10
9
10
9
8
7
6
5
4
3
2
1
0
VOUT=1V, 3.3V, 5V
VOUT=3.3V, 5V
8
7
6
5
4
3
2
1
0
-40
-20
0
20
40
60
80
100
-40
-20
0
20
40
60
80
100
Temperature [°C]
Temperature[°C]
Figure 29. Operational Range
VIN=24V, FREQ=L(300kHz), (Tj<150°C)
(Measured on FR-4 board 85 mm x 85 mm,
Figure 28. Operational Range
VIN=12V, FREQ=L(300kHz), (Tj<150°C)
(Measured on FR-4 board 85 mm x 85 mm,
Copper Thickness: Top and Bottom 70μm, 2 Internal Layers 35μm)
Copper Thickness: Top and Bottom 70μm, 2 Internal Layers 35μm)
10
10
VOUT=3.3V
9
9
VOUT=1V, 3.3V, 5V
8
7
6
5
4
3
2
1
0
8
7
6
VOUT=5V
5
4
3
2
1
0
-40
-20
0
20
40
60
80
100
-40
-20
0
20
40
60
80
100
Temperature [°C]
Temperature[°C]
Figure 30. Operational Range
VIN=12V, FREQ=H(600kHz), (Tj<150°C)
(Measured on FR-4 board 85 mm x 85 mm,
Figure 31. Operational Range
VIN=24V, FREQ=H(600kHz), (Tj<150°C)
(Measured on FR-4 board 85 mm x 85 mm,
Copper Thickness: Top and Bottom 70μm, 2 Internal Layers 35μm)
Copper Thickness: Top and Bottom 70μm, 2 Internal Layers 35μm)
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BD9F800MUX-Z
Typical Performance Curves - continued
VIN=10V/div
VSW=10V/div
VIN=10V/div
VSW=10V/div
VOUT=500mV/div
VPGD=5V/div
VOUT=500mV/div
VPGD=5V/div
Time=1ms/div
Time=1ms/div
Figure 33. Shutdown Waveform（VIN=VEN
）
Figure 32. Start-up Waveform（VIN=VEN
）
(VIN=12V, VOUT=1V, FREQ=L(300kHz), RLOAD=0.125Ω)
(VIN=12V, VOUT=1V, FREQ=L(300kHz), RLOAD=0.125Ω)
VEN=5V/div
VEN=5V/div
VSW=10V/div
VSW=10V/div
VOUT=500mV/div
VOUT=500mV/div
VPGD=5V/div
VPGD=5V/div
Time=1ms/div
Time=1ms/div
Figure 34. Start-up Waveform（VEN=0V to 5V）
(VIN=12V, VOUT=1V, FREQ=L(300kHz), RLOAD=0.125Ω)
Figure 35. Shutdown Waveform（VEN=5V to 0V）
(VIN=12V, VOUT=1V, FREQ=L(300kHz), RLOAD=0.125Ω)
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BD9F800MUX-Z
Typical Performance Curves - continued
1
0.8
0.6
0.4
0.2
0
1
0.8
0.6
0.4
0.2
0
-0.2
-0.4
-0.6
-0.8
-1
-0.2
-0.4
-0.6
-0.8
-1
0
2
4
6
8
10
0
2
4
6
8
10
Output Current : IOUT [A]
Output Current : IOUT [A]
Figure 37. Load Regulation
(VIN=12V, VOUT=1V, FREQ=H(600kHz))
Figure 36. Load Regulation
(VIN=12V, VOUT=1V, FREQ=L(300kHz))
1
1
0.8
0.6
0.4
0.2
0
0.8
0.6
0.4
0.2
0
IOUT= 0A
IOUT= 0A
-0.2
-0.4
-0.6
-0.8
-1
-0.2
-0.4
-0.6
-0.8
-1
IOUT= 8A
IOUT= 8A
4
8
12
16
20
24
28
4
8
12
16
Input Voltage : VIN [V]
Input Voltage : VIN [V]
Figure 38. Line Regulation
Figure 39. Line Regulation
(VIN=12V, VOUT=1V, FREQ=L(300kHz))
(VIN=12V, VOUT=1V, FREQ=H(600kHz))
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BD9F800MUX-Z
Typical Performance Curves - continued
360
340
320
300
280
720
690
660
630
600
570
540
510
480
IOUT= 8A
IOUT= 8A
IOUT= 4A
IOUT= 4A
260
IOUT= 0A
IOUT= 0A
24
240
4
8
12
16
20
28
4
8
12
16
Input Voltage : VIN [V]
Input Voltage : VIN [V]
Figure 41. Switching Frequency vs Input Voltage
(VOUT=1V, FREQ=H(600kHz))
Figure 40. Switching Frequency vs Input Voltage
(VOUT=1V, FREQ=L(300kHz))
360
720
690
660
630
600
570
540
510
480
340
320
300
280
260
240
IOUT= 8A
IOUT= 8A
IOUT= 4A
IOUT= 4A
IOUT= 0A
IOUT= 0A
4
8
12
16
20
24
28
4
8
12
16
20
24
28
Input Voltage : VIN [V]
Input Voltage : VIN [V]
Figure 42. Switching Frequency vs Input Voltage
(VOUT=3.3V, FREQ=L(300kHz))
Figure 43. Switching Frequency vs Input Voltage
(VOUT=3.3V, FREQ=H(600kHz))
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BD9F800MUX-Z
Typical Performance Curves - continued
360
720
690
660
630
600
570
540
510
480
340
IOUT= 4A
IOUT= 4A
IOUT= 8A
320
300
280
260
240
IOUT= 8A
IOUT= 0A
IOUT= 0A
4
8
12
16
20
24
28
4
8
12
16
20
24
28
Input Voltage : VIN [V]
Input Voltage : VIN [V]
Figure 45. Switching Frequency vs Input Voltage
(VOUT=5V, FREQ=H(600kHz))
Figure 44. Switching Frequency vs Input Voltage
(VOUT=5V, FREQ=L(300kHz))
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BD9F800MUX-Z
Function Explanations
1. Basic Operation
(1) Constant On Time Control
BD9F800MUX-Z is a single synchronous buck switching regulator employing a constant on-time control system.
It controls the on-time by using the duty ratio of VOUT /VIN inside device so that a switching frequency becomes 300
kHz or 600 kHz. Therefore it runs with the frequency of 300 kHz or 600 kHz under the constant on-time decided with
VOUT / VIN.
(2) Enable Control
The device shutdown can be controlled by the voltage applied to the EN terminal. When VEN reaches 2.3 V(Min), the
internal circuit is activated and the device starts up. To enable shutdown control with the EN terminal, the shutdown
interval (Low level interval of EN) must be set to 100 µs or longer. Startup by EN must be at the same time or after the
input of power supply voltage.
VEN
VENH
VENL
0
t
VOUT
0
t
Figure 46. Start Up and Shut Down with Enable
(3) Soft Start
When EN terminal is turned High, Soft Start operates and output voltage gradually rises. With the Soft Start Function,
over shoot of output voltage and rush current can be prevented. Rising time of output voltage is 1ms(Typ).
VEN
0
t
VOUT
0.7ms(Typ)
VOUT×0.9
0
t
Soft Start Time
1ms(Typ)
Figure 47. Soft Start Timing Chart
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BD9F800MUX-Z
(4) Power Good Output
When the output voltage reaches within ±7% (Typ) of the set voltage, the open drain Nch MOSFET internally
connected to the PGD terminal turns off and the PGD terminal goes into Hi-Z state. When the output voltage goes
beyond ±10% (Typ) of the set voltage, the open drain Nch MOSFET turns on and PGD terminal turns Low by a 500Ω
(Typ) pull-down resistor. Connecting a pull up resistor of about 20kΩ to 100kΩ is recommended.
+10%
+7%
VOUT
-7%
-10%
PGD
Figure 48. PGD Timing Chart
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BD9F800MUX-Z
2. Protective Functions
The protective circuits are intended for prevention of damage caused by unexpected accidents. Do not use them
for continuous protective operation.
(1) Over Current Protection, Short Circuit Protection (OCPL, SCP)
Over current protection function limits the current flowing through the Low-Side MOSFET for every switching period. If
the inductor current exceeds the source current limit threshold value IOCP 11.5A(Typ) while Low-Side MOSFET is ON,
the Low-Side MOSFET remains ON even with FB voltage is lower than the REF voltage. The Low-Side MOSFET
keeps ON until inductor current becomes lower than IOCP and High-Side MOSFET will turn ON. As a result both
frequency and duty fluctuates and output voltage may decrease.
In a case where output decreases because of OCP, output may rise after OCP is released due to the action at high
speed load response.
When the FB voltage falls below 0.38V(Typ) and its state continues for 250µs(Typ), the operation stops and restart in
hiccup mode after 8 ms(Typ).
Soft Start
8ms(Typ)
VOUT
Hiccup Delay
Hiccup Delay
Hiccup
Threshold
FB
Release Detect
High Side
MOSFET Gate
(HG)
Low Side
MOSFET Gate
(LG)
Current Limit Threshold(IOCP
)
Inductor Current
Internal
OCP Signal
Over
Current
Over
Current
Output Current
Normal
Normal
Normal
Figure 49. Over current protection timing chart
(2) Low Side Sink Over Current Protection (RCP)
When inductor current exceeds the sink current limit threshold value of 3.5A(Typ) while Low-Side MOSFET is ON, the
Low-Side MOSFET will turn OFF.
(3) High Side Over Current Protection (OCPH)
When inductor current exceeds the current limit threshold value of 15.5A(Typ) while High-Side MOSFET is ON, the
High-Side MOSFET will turn OFF.
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BD9F800MUX-Z
(4) Under Voltage Lockout Protection (UVLO)
The operation enters standby when the VIN terminal voltage is 3.8 V (Typ) or lower.
The operation starts when the VIN terminal voltage is 4.2 V (Typ) or higher.
VIN
UVLO
ON
UVLO
OFF
hys
0V
Soft Start
VOUT
FB
High Side
MOSFET Gate
Low Side
MOSFET Gate
Normal operation
UVLO
Normal operation
Figure 50. UVLO Timing Chart
(5) Thermal Shutdown Function
When the chip temperature exceeds Tj=175°C(Typ), the DC/DC converter output is stopped. Thermal protection circuit
resets when the temperature falls. The circuit has a hysteresis of 25°C (Typ). The thermal shutdown circuit is intended
for shutting down the device from thermal runaway in an abnormal state with the temperature exceeding Tjmax=150°C.
It is not meant to protect or guarantee the soundness of the application. Do not use the function of this circuit for
application protection design.
When thermal shut down circuit operates, the device will shut down and re-start in hiccup mode after 8ms(Typ).
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BD9F800MUX-Z
Application Example (VOUT=1V, FOSC=300kHz)
Parameter
Input Voltage
Symbol
VIN
Value
12 V
Output Voltage
VOUT
FOSC
IOMAX
1 V
Switching Frequency
Maximum Output Current
300kHz(Typ)
8A
Caution: Tj must be lower than 150°C under actual operating environment.
VIN
BD9F800MUX-Z
VIN
BOOT
EN
CIN3
CIN2
CIN1
CBOOT
VOUT
SW
L
VREG
FREQ
RFREQU
RFREQD
R1A
R1B
VOUT
RPGD
RVOUT
COUT1
COUT2
CVREG
FB
PGOOD
PGD
GND
R2
PGND
Figure 51. Application Circuit
Table 1. Recommended Component Values
Part No.
R1A
Value
0 Ω
Company
ROHM
ROHM
ROHM
ROHM
-
Part Name
MCR01MZPJ000
MCR01MZPD6801
MCR01MZPD2202
MCR01MZPJ104
-
R1B
6.8 kΩ
22 kΩ
100 kΩ
-
R2
RPGD
RFREQU
RFREQD
RVOUT
CIN1(Note 1)
CIN2(Note 2)
CIN3(Note 2)
COUT1(Note 3)
COUT2(Note 3)
CBOOT(Note 4)
CVREG(Note 5)
L
10 kΩ
0 Ω
ROHM
ROHM
Murata
Murata
Murata
Murata
Murata
Murata
Murata
Murata
MCR01MZPJ103
MCR01MZPJ000
0.1 μF
10 μF
10 μF
47 μF
22 μF
0.1 μF
2.2 μF
2.2μH
GRM155R61H104ME14
GRM32ER61H106MA12
GRM32ER61H106MA12
GRM31CR60J476ME19
GRM21BR60J226ME39
GRM152R61A104ME19
GRM188R61A225KE34
FDVE1040-H-2R2M
(Note 1) In order to reduce the influence of high frequency noise, connect a 0.1μF ceramic capacitor as close as possible to the VIN pin and the PGND
pin if needed.
(Note 2) For the capacitance of input capacitor, take temperature characteristics, DC bias characteristics, etc. into consideration to set to a minimum
value of no less than 10μF(300kHz).
(Note 3) In case capacitance value fluctuates due to temperature characteristics, DC bias characteristics, etc. of the output capacitor, loop response
characteristics may change. Please confirm on the actual equipment. When selecting a capacitor, confirm the characteristics of the capacitor
in its datasheet. A ceramic capacitor is recommended for the output capacitor.
(Note 4) For the capacitance of bootstrap capacitor, take temperature characteristics, DC bias characteristics, etc. into consideration to set minimum
value to no less than 0.047μF.
(Note 5) For the capacitance of CVREG capacitor, take temperature characteristics, DC bias characteristics, etc. into consideration to set minimum
value to no less than 1μF.
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BD9F800MUX-Z
100
90
80
70
60
50
40
30
20
10
0
80
60
180
135
90
Phase
40
20
45
0
0
Gain
-20
-40
-60
-80
-45
-90
-135
-180
Phase Margin
57.7deg
0
2
4
6
8
0.1
1.0
10.0
Frequency [kHz]
100.0
1000.0
Output Current : IOUT [A]
Figure 53. Loop Response IOUT=8A
(VIN=12V, VOUT=1V, FREQ=L(300kHz))
Figure 52. Efficiency vs Output Current
(VIN=12V, VOUT=1V, FREQ=L(300kHz))
VOUT=50mV/div
VOUT=50mV/div
VSW=5V/div
IOUT=2A/div
Time=5μs/div
Time=500μs/div
Figure 54. Load Transient Response IOUT=2A - 6A
(VIN=12V, VOUT=1V, FREQ=L(300kHz))
Figure 55. VOUT Ripple IOUT=8A
(VIN=12V, VOUT=1V, FREQ=L(300kHz))
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BD9F800MUX-Z
Application Example (VOUT=1V, FOSC=600kHz)
Parameter
Input Voltage
Symbol
VIN
Value
12 V
Output Voltage
VOUT
FOSC
IOMAX
1 V
Switching Frequency
Maximum Output Current
600kHz(Typ)
8A
Caution: Tj must be lower than 150°C under actual operating environment.
VIN
BD9F800MUX-Z
VIN
BOOT
EN
CIN3
CIN2
CIN1
CBOOT
VOUT
SW
L
VREG
FREQ
RFREQU
RFREQD
R1A
R1B
VOUT
RPGD
RVOUT
COUT1
COUT2
CVREG
FB
PGOOD
PGD
GND
R2
PGND
Figure 56. Application Circuit
Table 2. Recommended Component Values
Part No.
R1A
Value
0 Ω
Company
ROHM
ROHM
ROHM
ROHM
ROHM
-
Part Name
MCR01MZPJ000
MCR01MZPD6801
MCR01MZPD2202
MCR01MZPJ104
MCR01MZPJ103
-
R1B
6.8 kΩ
22 kΩ
100 kΩ
10 kΩ
-
R2
RPGD
RFREQU
RFREQD
RVOUT
CIN1(Note 1)
CIN2(Note 2)
CIN3(Note 2)
COUT1(Note 3)
COUT2(Note 3)
CBOOT(Note 4)
CVREG(Note 5)
L
0 Ω
ROHM
Murata
Murata
Murata
Murata
-
MCR01MZPJ000
0.1 μF
10 μF
10 μF
47 μF
-
GRM155R61H104ME14
GRM32ER61H106MA12
GRM32ER61H106MA12
GRM31CR60J476ME19
-
0.1 μF
2.2 μF
1.0μH
Murata
Murata
Murata
GRM152R61A104ME19
GRM188R61A225KE34
FDUE1040D-H-1R0M
(Note 1) In order to reduce the influence of high frequency noise, connect a 0.1μF ceramic capacitor as close as possible to the VIN pin and the PGND
pin if needed.
(Note 2) For the capacitance of input capacitor, take temperature characteristics, DC bias characteristics, etc. into consideration to set to a minimum
value of no less than 6μF(600kHz).
(Note 3) In case capacitance value fluctuates due to temperature characteristics, DC bias characteristics, etc. of the output capacitor, loop response
characteristics may change. Please confirm on the actual equipment. When selecting a capacitor, confirm the characteristics of the capacitor
in its datasheet. A ceramic capacitor is recommended for the output capacitor.
(Note 4) For the capacitance of bootstrap capacitor, take temperature characteristics, DC bias characteristics, etc. into consideration to set minimum
value to no less than 0.047μF.
(Note 5) For the capacitance of CVREG capacitor, take temperature characteristics, DC bias characteristics, etc. into consideration to set minimum
value to no less than 1μF.
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BD9F800MUX-Z
100
90
80
70
60
50
40
30
20
10
0
80
60
180
135
90
Phase
40
20
45
0
0
Gain
-20
-40
-60
-80
-45
-90
-135
-180
Phase Margin
63.4deg
0
2
4
6
8
0.1
1.0
10.0
Frequency [kHz]
100.0
1000.0
Output Current : IOUT [A]
Figure 57. Efficiency vs Output Current
(VIN=12V, VOUT=1V, FREQ=H(600kHz))
Figure 58. Loop Response IOUT=8A
(VIN=12V, VOUT=1V, FREQ=H(600kHz))
VOUT=50mV/div
VOUT=50mV/div
VSW=5V/div
IOUT=2A/div
Time=500μs/div
Time=5μs/div
Figure 59. Load Transient Response IOUT=2A - 6A
(VIN=12V, VOUT=1V, FREQ=H(600kHz))
Figure 60. VOUT Ripple IOUT=8A
(VIN=12V, VOUT=1V, FREQ=H(600kHz))
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BD9F800MUX-Z
Application Example (VOUT=1.2V, FOSC=300kHz)
Parameter
Input Voltage
Symbol
Value
12 V
VIN
Output Voltage
VOUT
FOSC
IOMAX
1.2 V
Switching Frequency
Maximum Output Current
300kHz(Typ)
8A
Caution: Tj must be lower than 150°C under actual operating environment.
VIN
BD9F800MUX-Z
VIN
BOOT
EN
CIN3
CIN2
CIN1
CBOOT
VOUT
SW
L
VREG
FREQ
RFREQU
RFREQD
R1A
R1B
VOUT
RPGD
RVOUT
COUT1
COUT2
CVREG
FB
PGOOD
PGD
GND
R2
PGND
Figure 61. Application Circuit
Table 3. Recommended Component Values
Part No.
R1A
Value
0 Ω
Company
ROHM
ROHM
ROHM
ROHM
-
Part Name
MCR01MZPJ000
MCR01MZPD6801
MCR01MZPD1202
MCR01MZPJ104
-
R1B
6.8 kΩ
12 kΩ
100 kΩ
-
R2
RPGD
RFREQU
RFREQD
RVOUT
CIN1(Note 1)
CIN2(Note 2)
CIN3(Note 2)
COUT1(Note 3)
COUT2(Note 3)
CBOOT(Note 4)
CVREG(Note 5)
L
10 kΩ
0 Ω
ROHM
ROHM
Murata
Murata
Murata
Murata
Murata
Murata
Murata
Murata
MCR01MZPJ103
MCR01MZPJ000
0.1 μF
10 μF
10 μF
47 μF
22 μF
0.1 μF
2.2 μF
2.2μH
GRM155R61H104ME14
GRM32ER61H106MA12
GRM32ER61H106MA12
GRM31CR60J476ME19
GRM21BR60J226ME39
GRM152R61A104ME19
GRM188R61A225KE34
FDVE1040-H-2R2M
(Note 1) In order to reduce the influence of high frequency noise, connect a 0.1μF ceramic capacitor as close as possible to the VIN pin and the PGND
pin if needed.
(Note 2) For the capacitance of input capacitor, take temperature characteristics, DC bias characteristics, etc. into consideration to set to a minimum
value of no less than 10μF(300kHz).
(Note 3) In case capacitance value fluctuates due to temperature characteristics, DC bias characteristics, etc. of the output capacitor, loop response
characteristics may change. Please confirm on the actual equipment. When selecting a capacitor, confirm the characteristics of the capacitor
in its datasheet. A ceramic capacitor is recommended for the output capacitor.
(Note 4) For the capacitance of bootstrap capacitor, take temperature characteristics, DC bias characteristics, etc. into consideration to set minimum
value to no less than 0.047μF.
(Note 5) For the capacitance of CVREG capacitor, take temperature characteristics, DC bias characteristics, etc. into consideration to set minimum
value to no less than 1μF.
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BD9F800MUX-Z
100
90
80
70
60
50
40
30
20
10
100
80
180
135
90
Phase
60
40
45
20
0
0
Gain
-45
-90
-135
-180
-20
-40
-60
-80
Phase Margin
60.3deg
0
0
0.1
1.0
10.0
Frequency : [kHz]
100.0
1000.0
2
4
6
8
Output Current : IOUT [A]
Figure 63. Loop Response IOUT=8A
(VIN=12V, VOUT=1.2V, FREQ=L(300kHz))
Figure 62. Efficiency vs Output Current
(VIN=12V, VOUT=1.2V, FREQ=L(300kHz))
VOUT=100mV/div
VOUT=50mV/div
VSW=5V/div
IOUT=2A/div
Time=500μs/div
Time=5μs/div
Figure 64. Load Transient Response IOUT=2A - 6A
(VIN=12V, VOUT=1.2V, FREQ=L(300kHz))
Figure 65. VOUT Ripple IOUT=8A
(VIN=12V, VOUT=1.2V, FREQ=L(300kHz))
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BD9F800MUX-Z
Application Example (VOUT=1.2V, FOSC=600kHz)
Parameter
Input Voltage
Symbol
Value
12 V
VIN
Output Voltage
VOUT
FOSC
IOMAX
1.2 V
Switching Frequency
Maximum Output Current
600kHz(Typ)
8A
Caution: Tj must be lower than 150°C under actual operating environment.
VIN
BD9F800MUX-Z
VIN
BOOT
EN
CIN3
CIN2
CIN1
CBOOT
VOUT
SW
L
VREG
FREQ
RFREQU
RFREQD
R1A
R1B
VOUT
RPGD
RVOUT
COUT1
COUT2
CVREG
FB
PGOOD
PGD
GND
R2
PGND
Figure 66. Application Circuit
Table 4. Recommended Component Values
Part No.
R1A
Value
0 Ω
Company
ROHM
ROHM
ROHM
ROHM
ROHM
-
Part Name
MCR01MZPJ000
MCR01MZPD6801
MCR01MZPD1202
MCR01MZPJ104
MCR01MZPJ103
-
R1B
6.8 kΩ
12 kΩ
100 kΩ
10 kΩ
-
R2
RPGD
RFREQU
RFREQD
RVOUT
CIN1(Note 1)
CIN2(Note 2)
CIN3(Note 2)
COUT1(Note 3)
COUT2(Note 3)
CBOOT(Note 4)
CVREG(Note 5)
L
0 Ω
ROHM
Murata
Murata
Murata
Murata
-
MCR01MZPJ000
0.1 μF
10 μF
10 μF
47 μF
-
GRM155R61H104ME14
GRM32ER61H106MA12
GRM32ER61H106MA12
GRM31CR60J476ME19
-
0.1 μF
2.2 μF
1.0μH
Murata
Murata
Murata
GRM152R61A104ME19
GRM188R61A225KE34
FDUE1040D-H-1R0M
(Note 1) In order to reduce the influence of high frequency noise, connect a 0.1μF ceramic capacitor as close as possible to the VIN pin and the PGND
pin if needed.
(Note 2) For the capacitance of input capacitor, take temperature characteristics, DC bias characteristics, etc. into consideration to set to a minimum
value of no less than 6μF(600kHz).
(Note 3) In case capacitance value fluctuates due to temperature characteristics, DC bias characteristics, etc. of the output capacitor, loop response
characteristics may change. Please confirm on the actual equipment. When selecting a capacitor, confirm the characteristics of the capacitor
in its datasheet. A ceramic capacitor is recommended for the output capacitor.
(Note 4) For the capacitance of bootstrap capacitor, take temperature characteristics, DC bias characteristics, etc. into consideration to set minimum
value to no less than 0.047μF.
(Note 5) For the capacitance of CVREG capacitor, take temperature characteristics, DC bias characteristics, etc. into consideration to set minimum
value to no less than 1μF.
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TSZ22111 • 15 • 001
BD9F800MUX-Z
100
90
80
70
60
50
40
30
20
10
80
60
180
135
90
Phase
40
20
45
Gain
0
0
-20
-40
-60
-80
-45
-90
-135
-180
Phase Margin
66.9deg
0
0
2
4
6
8
0.1
1.0
10.0
Frequency [kHz]
Figure 68. Loop Response IOUT=8A
100.0
1000.0
Output Current : IOUT [A]
Figure 67. Efficiency vs Output Current
(VIN=12V, VOUT=1.2V, FREQ=H(600kHz))
(VIN=12V, VOUT=1.2V, FREQ=H(600kHz))
VOUT=100mV/div
VOUT=50mV/div
VSW=5V/div
IOUT=2A/div
Time=500μs/div
Time=5μs/div
Figure 69. Load Transient Response IOUT=2A - 6A
(VIN=12V, VOUT=1.2V, FREQ=H(600kHz))
Figure 70. VOUT Ripple IOUT=8A
(VIN=12V, VOUT=1.2V, FREQ=H(600kHz))
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BD9F800MUX-Z
Application Example (VOUT=3.3V, FOSC=300kHz)
Parameter
Input Voltage
Symbol
Value
12 V
VIN
Output Voltage
VOUT
FOSC
IOMAX
3.3 V
Switching Frequency
Maximum Output Current
300kHz(Typ)
8A
Caution: Tj must be lower than 150°C under actual operating environment.
VIN
BD9F800MUX-Z
VIN
BOOT
EN
CIN3
CIN2
CIN1
CBOOT
VOUT
SW
L
VREG
FREQ
RFREQU
RFREQD
R1A
R1B
VOUT
RPGD
RVOUT
COUT1
COUT2
CVREG
FB
PGOOD
PGD
GND
R2
PGND
Figure 71. Application Circuit
Table 5. Recommended Component Values
Part No.
R1A
Value
5.1 kΩ
68 kΩ
22 kΩ
100 kΩ
-
Company
ROHM
ROHM
ROHM
ROHM
-
Part Name
MCR01MZPD5101
MCR01MZPD6802
MCR01MZPD2202
MCR01MZPJ104
-
R1B
R2
RPGD
RFREQU
RFREQD
RVOUT
CIN1(Note 1)
CIN2(Note 2)
CIN3(Note 2)
COUT1(Note 3)
COUT2(Note 3)
CBOOT(Note 4)
CVREG(Note 5)
L
10 kΩ
0 Ω
ROHM
ROHM
Murata
Murata
Murata
Murata
Murata
Murata
Murata
Murata
MCR01MZPJ103
MCR01MZPJ000
0.1 μF
10 μF
10 μFV
47 μF
22 μF
0.1 μF
2.2 μF
3.3μH
GRM155R61H104ME14
GRM32ER61H106MA12
GRM32ER61H106MA12
GRM32ER61A476ME20
GRM31CR61A226ME19
GRM152R61A104ME19
GRM188R61A225KE34
FDVE1040-H-3R3M
(Note 1) In order to reduce the influence of high frequency noise, connect a 0.1μF ceramic capacitor as close as possible to the VIN pin and the PGND
pin if needed.
(Note 2) For the capacitance of input capacitor, take temperature characteristics, DC bias characteristics, etc. into consideration to set to a minimum
value of no less than 10μF(300kHz).
(Note 3) In case capacitance value fluctuates due to temperature characteristics, DC bias characteristics, etc. of the output capacitor, loop response
characteristics may change. Please confirm on the actual equipment. When selecting a capacitor, confirm the characteristics of the capacitor
in its datasheet. A ceramic capacitor is recommended for the output capacitor.
(Note 4) For the capacitance of bootstrap capacitor, take temperature characteristics, DC bias characteristics, etc. into consideration to set minimum
value to no less than 0.047μF.
(Note 5) For the capacitance of CVREG capacitor, take temperature characteristics, DC bias characteristics, etc. into consideration to set minimum
value to no less than 1μF.
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BD9F800MUX-Z
100
90
80
70
60
50
40
30
20
10
80
60
180
135
90
Phase
40
20
45
0
0
Gain
-20
-40
-60
-80
-45
-90
-135
-180
Phase Margin
76.8deg
0
0
2
4
6
8
0
1
10
100
1000
Output Current : IOUT [A]
Frequency [kHz]
Figure 73. Loop Response IOUT=8A
(VIN=12V, VOUT=3.3V, FREQ=L(300kHz))
Figure 72. Efficiency vs Output Current
(VIN=12V, VOUT=3.3V, FREQ=L(300kHz))
VOUT=100mV/div
VOUT=50mV/div
SW=5V/div
IOUT=2A/div
Time=500μs/div
Time=5μs/div
Figure 74. Load Transient Response IOUT=2A - 6A
(VIN=12V, VOUT=3.3V, FREQ=L(300kHz))
Figure 75. VOUT Ripple IOUT=8A
(VIN=12V, VOUT=3.3V, FREQ=L(300kHz))
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BD9F800MUX-Z
Application Example (VOUT=3.3V, FOSC=600kHz)
Parameter
Input Voltage
Symbol
Value
12 V
VIN
Output Voltage
VOUT
FOSC
IOMAX
3.3 V
Switching Frequency
Maximum Output Current
600kHz(Typ)
8A
Caution: Tj must be lower than 150°C under actual operating environment.
VIN
BD9F800MUX-Z
VIN
BOOT
EN
CIN3
CIN2
CIN1
CBOOT
VOUT
SW
L
VREG
FREQ
RFREQU
RFREQD
R1A
R1B
VOUT
RPGD
RVOUT
COUT1
COUT2
CVREG
FB
PGOOD
PGD
GND
R2
PGND
Figure 76. Application Circuit
Table 6. Recommended Component Values
Part No.
R1A
Value
5.1 kΩ
68 kΩ
22 kΩ
100 kΩ
10 kΩ
-
Company
ROHM
ROHM
ROHM
ROHM
ROHM
-
Part Name
MCR01MZPD5101
MCR01MZPD6802
MCR01MZPD2202
MCR01MZPJ104
MCR01MZPJ103
-
R1B
R2
RPGD
RFREQU
RFREQD
RVOUT
CIN1(Note 1)
CIN2(Note 2)
CIN3(Note 2)
COUT1(Note 3)
COUT2(Note 3)
CBOOT(Note 4)
CVREG(Note 5)
L
0 Ω
ROHM
Murata
Murata
Murata
Murata
-
MCR01MZPJ000
0.1 μF
10 μF
10 μF
47 μF
-
GRM155R61H104ME14
GRM32ER61H106MA12
GRM32ER61H106MA12
GRM32ER61A476ME20
-
0.1 μF
2.2 μF
1.5μH
Murata
Murata
Murata
GRM152R61A104ME19
GRM188R61A225KE34
FDVE1040-H-1R5M
(Note 1) In order to reduce the influence of high frequency noise, connect a 0.1μF ceramic capacitor as close as possible to the VIN pin and the PGND
pin if needed.
(Note 2) For the capacitance of input capacitor, take temperature characteristics, DC bias characteristics, etc. into consideration to set to a minimum
value of no less than 6μF(600kHz).
(Note 3) In case capacitance value fluctuates due to temperature characteristics, DC bias characteristics, etc. of the output capacitor, loop response
characteristics may change. Please confirm on the actual equipment. When selecting a capacitor, confirm the characteristics of the capacitor
in its datasheet. A ceramic capacitor is recommended for the output capacitor.
(Note 4) For the capacitance of bootstrap capacitor, take temperature characteristics, DC bias characteristics, etc. into consideration to set minimum
value to no less than 0.047μF.
(Note 5) For the capacitance of CVREG capacitor, take temperature characteristics, DC bias characteristics, etc. into consideration to set minimum
value to no less than 1μF.
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BD9F800MUX-Z
100
90
80
70
60
50
40
30
20
10
80
60
180
135
90
Phase
40
20
45
0
0
Gain
-20
-40
-60
-80
-45
-90
-135
-180
Phase Margin
79.1deg
0
0
2
4
6
8
0.1
1.0
10.0
Frequency [kHz]
Figure 78. Loop Response IOUT=8A
100.0
1000.0
Output Current : IOUT [A]
Figure 77. Efficiency vs Output Current
(VIN=12V, VOUT=3.3V, FREQ=H(600kHz))
(VIN=12V, VOUT=3.3V, FREQ=H(600kHz))
VOUT=100mV/div
VSW=5V/div
VOUT=200mV/div
IOUT=2A/div
Time=5μs/div
Time=500μs/div
Figure 79. Load Transient Response IOUT=2A - 6A
(VIN=12V, VOUT=3.3V, FREQ=H(600kHz))
Figure 80. VOUT Ripple IOUT=8A
(VIN=12V, VOUT=3.3V, FREQ=H(600kHz))
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BD9F800MUX-Z
Application Example (VOUT=5V, FOSC=300kHz)
Parameter
Input Voltage
Symbol
VIN
Value
12 V
Output Voltage
VOUT
FOSC
IOMAX
5 V
Switching Frequency
Maximum Output Current
300kHz(Typ)
8A
Caution: Tj must be lower than 150°C under actual operating environment.
VIN
BD9F800MUX-Z
VIN
BOOT
EN
CIN3
CIN2
CIN1
CBOOT
VOUT
SW
L
VREG
FREQ
RFREQU
RFREQD
R1A
R1B
VOUT
RPGD
RVOUT
COUT1
COUT2
CVREG
FB
PGOOD
PGD
GND
R2
PGND
Figure 81. Application Circuit
Table 7. Recommended Component Values
Part No.
R1A
Value
8.2k Ω
47 kΩ
10 kΩ
100 kΩ
-
Company
ROHM
ROHM
ROHM
ROHM
-
Part Name
MCR01MZPD8201
MCR01MZPD4702
MCR01MZPD1002
MCR01MZPJ104
-
R1B
R2
RPGD
RFREQU
RFREQD
RVOUT
CIN1(Note 1)
CIN2(Note 2)
CIN3(Note 2)
COUT1(Note 3)
COUT2(Note 3)
CBOOT(Note 4)
CVREG(Note 5)
L
10 kΩ
10 Ω
ROHM
ROHM
Murata
Murata
Murata
Murata
Murata
Murata
Murata
Murata
MCR01MZPJ103
MCR01MZPJ100
0.1 μF
10 μF
10 μF
47 μF
22 μF
0.1 μF
2.2 μF
4.7μH
GRM155R61H104ME14
GRM32ER61H106MA12
GRM32ER61H106MA12
GRM32ER61A476ME20
GRM31CR61A226ME19
GRM152R61A104ME19
GRM188R61A225KE34
FDVE1040-H-4R7M
(Note 1) In order to reduce the influence of high frequency noise, connect a 0.1μF ceramic capacitor as close as possible to the VIN pin and the PGND
pin if needed.
(Note 2) For the capacitance of input capacitor, take temperature characteristics, DC bias characteristics, etc. into consideration to set to a minimum
value of no less than 10μF(300kHz).
(Note 3) In case capacitance value fluctuates due to temperature characteristics, DC bias characteristics, etc. of the output capacitor, loop response
characteristics may change. Please confirm on the actual equipment. When selecting a capacitor, confirm the characteristics of the capacitor
in its datasheet. A ceramic capacitor is recommended for the output capacitor.
(Note 4) For the capacitance of bootstrap capacitor, take temperature characteristics, DC bias characteristics, etc. into consideration to set minimum
value to no less than 0.047μF.
(Note 5) For the capacitance of CVREG capacitor, take temperature characteristics, DC bias characteristics, etc. into consideration to set minimum
value to no less than 1μF.
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BD9F800MUX-Z
100
90
80
70
60
50
40
30
20
10
80
60
180
135
90
Phase
40
20
45
0
0
Gain
-20
-40
-60
-80
-45
-90
-135
-180
Phase Margin
77.5deg
0
0
2
4
6
8
0.1
1.0
10.0
Frequency [kHz]
Figure 83. Loop Response IOUT=8A
100.0
1000.0
Output Current : IOUT [A]
Figure 82. Efficiency vs Output Current
(VIN=12V, VOUT=5V, FREQ=L(300kHz))
(VIN=12V, VOUT=5V, FREQ=L(300kHz))
VOUT=200mV/div
VOUT=100mV/div
VSW=5V/div
IOUT=2A/div
Time=500μs/div
Time=5μs/div
Figure 84. Load Transient Response IOUT=2A - 6A
(VIN=12V, VOUT=5V, FREQ=L(300kHz))
Figure 85. VOUT Ripple IOUT=8A
(VIN=12V, VOUT=5V, FREQ=L(300kHz))
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BD9F800MUX-Z
Application Example (VOUT=5V, FOSC=600kHz)
s
Parameter
Input Voltage
Symbol
VIN
Value
12 V
Output Voltage
VOUT
FOSC
IOMAX
5 V
Switching Frequency
Maximum Output Current
600kHz(Typ)
8A
Caution: Tj must be lower than 150°C under actual operating environment.
VIN
BD9F800MUX-Z
VIN
BOOT
EN
CIN3
CIN2
CIN1
CBOOT
VOUT
SW
L
VREG
FREQ
RFREQU
RFREQD
R1A
R1B
VOUT
RPGD
RVOUT
COUT1
COUT2
CVREG
FB
PGOOD
PGD
GND
R2
PGND
Figure 86. Application Circuit
Table 8. Recommended Component Values
Part No.
R1A
Value
8.2k Ω
47 kΩ
10 kΩ
100 kΩ
10 kΩ
-
Company
ROHM
ROHM
ROHM
ROHM
ROHM
-
Part Name
MCR01MZPD8201
MCR01MZPD4702
MCR01MZPD1002
MCR01MZPJ104
MCR01MZPJ103
-
R1B
R2
RPGD
RFREQU
RFREQD
RVOUT
CIN1(Note 1)
CIN2(Note 2)
CIN3(Note 2)
COUT1(Note 3)
COUT2(Note 3)
CBOOT(Note 4)
CVREG(Note 5)
L
10 Ω
ROHM
Murata
Murata
Murata
Murata
-
MCR01MZPJ100
0.1 μF
10 μF
10 μF
47 μF
-
GRM155R61H104ME14
GRM32ER61H106MA12
GRM32ER61H106MA12
GRM32ER61A476ME20
-
0.1 μF
2.2 μF
2.2μH
Murata
Murata
Murata
GRM152R61A104ME19
GRM188R61A225KE34
FDVE1040-H-2R2M
(Note 1) In order to reduce the influence of high frequency noise, connect a 0.1μF ceramic capacitor as close as possible to the VIN pin and the PGND
pin if needed.
(Note 2) For the capacitance of input capacitor, take temperature characteristics, DC bias characteristics, etc. into consideration to set to a minimum
value of no less than 6μF(600kHz).
(Note 3) In case capacitance value fluctuates due to temperature characteristics, DC bias characteristics, etc. of the output capacitor, loop response
characteristics may change. Please confirm on the actual equipment. When selecting a capacitor, confirm the characteristics of the capacitor
in its datasheet. A ceramic capacitor is recommended for the output capacitor.
(Note 4) For the capacitance of bootstrap capacitor, take temperature characteristics, DC bias characteristics, etc. into consideration to set minimum
value to no less than 0.047μF.
(Note 5) For the capacitance of CVREG capacitor, take temperature characteristics, DC bias characteristics, etc. into consideration to set minimum
value to no less than 1μF.
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TSZ22111 • 15 • 001
BD9F800MUX-Z
100
90
80
70
60
50
40
30
20
10
80
60
180
135
90
Phase
40
20
45
0
0
-20
-40
-60
-80
-45
-90
-135
-180
Gain
Phase Margin
80.9deg
0
0
2
4
6
8
0.1
1.0
10.0
Frequency [kHz]
Figure 88. Loop Response IOUT=8A
100.0
1000.0
Output Current : IOUT [A]
Figure 87. Efficiency vs Output Current
(VIN=12V, VOUT=5V, FREQ=H(600kHz))
(VIN=12V, VOUT=5V, FREQ=H(600kHz))
VOUT=200mV/div
VOUT=100mV/div
VSW=5V/div
IOUT=2A/div
Time=500μs/div
Time=5μs/div
Figure 89. Load Transient Response IOUT=2A - 6A
(VIN=12V, VOUT=5V, FREQ=H(600kHz))
Figure 90. VOUT Ripple IOUT=8A
(VIN=12V, VOUT=5V, FREQ=H(600kHz))
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BD9F800MUX-Z
Selection of Components Externally Connected
About the application except the recommendation, please contact us.
1. Output LC Filter
In order to supply a continuous current to the load, the DC/DC converter requires an LC filter for smoothing the output
voltage. The recommended inductance value is listed in Table 9.
PVIN
IL
Inductor saturation current > IOUTMAX + ΔIL /2
VOUT
L
IOUT
ΔIL
Driver
Average inductor current
COUT
t
Figure 91. Waveform of current through inductor
Figure 92. Output LC filter circuit
Inductor ripple current ΔIL can be represented by the following equation.
1
ΔIL =VOUT × (VIN -VOUT ) ×
= 1528
mA
VIN × fSW × L
Where:
VIN = 12V
VOUT = 1.0V
L = 1.0µH
fsw = 600kHz
The saturation current of the inductor must be larger than the sum of the maximum output current and 1/2 of the inductor
ripple current ∆IL.
Table 9. Recommended inductance value
Output Voltage
Frequency
1.0V
2.2μH
1.0μH
1.2V
2.2μH
1.0μH
3.3V
3.3μH
1.5μH
5.0V
4.7μH
2.2μH
12V
300kHz
600kHz
5.6μH
3.3μH
The output capacitor COUT affects the output ripple voltage characteristics. The output capacitor COUT must satisfy the
required ripple voltage characteristics.
The output ripple voltage can be represented by the following equation.
1
ΔVRPL = ΔIL × (RESR
+
)
V
8 × COUT × fSW
Where:
RESR is the Equivalent Series Resistance (ESR) of the output capacitor.
* The capacitor rating must allow a sufficient margin with respect to the output voltage.
The output ripple voltage is decreased with a smaller RESR
.
Considering temperature and DC bias characteristics, please use ceramic capacitor of about 66µF to 100µF(300kHz), or
44µF to 100µF(600kHz).
* Be careful of total capacitance value, when additional capacitor CLOAD is connected in addition to output capacitor COUT
Use maximum additional capacitor CLOAD (Max) which satisfies the following condition.
.
Maximumstarting inductor bottom ripple current ILSTART < Current Limit Threshold 8.5 [A](Min)
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BD9F800MUX-Z
Maximum starting inductor bottom ripple current ILSTART can be expressed using the following equation.
ΔIL
2
ILSTART = Maximum starting output current(IOSS )+Chargecurrent to output capacitor(ICAP )-
Charge current to output capacitor ICAP can be expressed using the following equation.
(COUT +C LOAD ) ×VOUT
ICAP
=
A
t SS
* CLOAD has an effect on the stability of the DC/DC converter.
To ensure the stability of the DC/DC converter, make sure that a sufficient phase margin is provided.
2. Output Voltage Setting
The output voltage value can be set by the feedback resistance ratio. Please use resisters of about 1kΩ to 100kΩ.
R1 + R2
V
OUT
=
× 0.765
× R1
V
VOUT
R2
0.765
R2 =
Ω
VOUT -0.765
R1
Error Amplifier
0.765
V
VOUT 13.5
V
FB
0.765V
R2
BD9F800MUX-Z operates under the condition which satisfies the
following equation.
V
IN 0.033[V]VOUT VIN 0.87 -0.12 IOUT
IN 0.067 [V]VOUT VIN 0.77 -0.13 IOUT
V
(300kHZ)
V
V
(600kHZ)
Figure 93. Feedback Resistor Circuit
3. Input Capacitor
Use a ceramic capacitor. It is more effective by placing it near VIN and PGND terminals. In using capacitor, please
consider temperature and DC bias characteristics. For normal setting, it is recommended to connect two 10μF and 0.1μF
capacitors. Input ripple voltage can be reduced further by using larger values. Also, considering temperature and DC bias
characteristics, do not use capacity less than 10μF(300kHz), 6μF(600kHz). In order to reduce the influence of high
frequency noise, place 0.1μF ceramic capacitor close to VIN terminal and PGND terminal as much as possible.
4. VREG Capacitor
Connect a 2.2µF ceramic capacitor between VREG terminal and GND terminal. For the capacitance of VREG capacitor,
take temperature characteristics, DC bias characteristics, etc. into consideration to set minimum value to no less than 1μF.
Place VREG capacitor close to VREG terminal and GND terminal as much as possible.
5. Bootstrap Capacitor
Connect a 0.1µF ceramic capacitor between SW terminal and BOOT terminal. For the capacitance of bootstrap capacitor,
take temperature characteristics, DC bias characteristics, etc. into consideration to set minimum value to no less than
0.047μF. Place bootstrap capacitor close to BOOT terminal and SW terminal as much as possible.
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PCB Layout Design
PCB layout design for DC/DC converter power supply IC is as important as the circuit design. Appropriate layout can avoid
various problems caused by power supply circuit. Figure 94-a to 94-c show the current path in a buck converter circuit. The
Loop1 in Figure 94-a is a current path when H-side Switch is ON and L-side Switch is OFF, the Loop2 in Figure 94-b is when
H-side Switch is OFF and L-side Switch is ON. The thick line in Figure 94-c shows the difference between Loop1 and Loop2.
The current in thick line changes sharply each time the switching element H-side and L-side Switch change from OFF to ON,
and vice versa. These sharp changes induce several harmonics in the waveform. Therefore, the loop area of thick line that is
consisted by input capacitor and IC should be as small as possible to minimize noise. For more detail, refer to application
note of switching regulator series “PCB Layout Techniques of Buck Converter”.
Loop1
VIN
VOUT
L
H-side Switch
CIN
COUT
L-side Switch
GND
GND
Figure 94-a. Current path when H-side Switch = ON, L-side switch = OFF
VIN
VOUT
L
H-side Switch
CIN
COUT
Loop2
L-side Switch
GND
VIN
GND
Figure 94-b. Current path when H-side Switch = OFF, L-side switch = ON
VOUT
L
H-side FET
CIN
COUT
L-side FET
GND
GND
Figure 94-c. Difference of current and critical area in layout
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PCB Layout Design - continued
When designing the PCB layout, please pay extra attention to the following points:
- Place input capacitor on the same PCB surface as the IC and as close as possible to the IC’s VIN terminal and PGND
terminal.
- If there is any unused area on the PCB, provide a copper foil plane for the ground node to assist heat dissipation from
the IC and the surrounding components.
- Switching nodes should be traced as thick and short as possible to the inductor, because they may induce the noise to
the other nodes due to AC coupling.
- Please keep the lines connected to FB away from the SW node as far as possible.
- Please place output capacitor away from input capacitor to avoid harmonics noise from the input.
- Please connect GND to PGND that are close to the output capacitor. It can avoid harmonic noise.
Input Bypass
Capasitor
Output
Capacitor
PGND
SW
VIN
Input Bulk
Capasitor
Output
Inductor
Enable
Control
EN
GND
VREG
Capacitor
BOOT Capacitor
PGOOD Output
Frequency Control
Thermal VIA
Figure 95. Example of PCB Layout (TOP VIEW)
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BD9F800MUX-Z
I/O Equivalent Circuit
1. BOOT
2. PGD
VREG
VIN
PGD
450Ω
BOOT
SW
3. VOUT
4. FREQ
20kΩ
100Ω
FREQ
VOUT
858kΩ
250kΩ
10kΩ
863kΩ
280kΩ
50kΩ
5. FB
6. VREG
VIN
VREG
5kΩ
FB
405kΩ
2kΩ
15kΩ
1MΩ
10kΩ
1pF
120kΩ
9. SW
11. EN
VIN
BOOT
EN
414kΩ
2MΩ
555kΩ
965kΩ
SW
VREG
20Ω
621kΩ
Figure 96. I/O equivalence circuit
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Operational Notes
1.
2.
Reverse Connection of Power Supply
Connecting the power supply in reverse polarity can damage the IC. Take precautions against reverse polarity when
connecting the power supply, such as mounting an external diode between the power supply and the IC’s power
supply pins.
Power Supply Lines
Design the PCB layout pattern to provide low impedance supply lines. Separate the ground and supply lines of the
digital and analog blocks to prevent noise in the ground and supply lines of the digital block from affecting the analog
block. Furthermore, connect a capacitor to ground at all power supply pins. Consider the effect of temperature and
aging on the capacitance value when using electrolytic capacitors.
3.
4.
Ground Voltage
Ensure that no pins are at a voltage below that of the ground pin at any time, even during transient condition. However,
pins that drive inductive loads (e.g. motor driver outputs, DC-DC converter outputs) may inevitably go below ground
due to back EMF or electromotive force. In such cases, the user should make sure that such voltages going below
ground will not cause the IC and the system to malfunction by examining carefully all relevant factors and conditions
such as motor characteristics, supply voltage, operating frequency and PCB wiring to name a few.
Ground Wiring Pattern
When using both small-signal and large-current ground traces, the two ground traces should be routed separately but
connected to a single ground at the reference point of the application board to avoid fluctuations in the small-signal
ground caused by large currents. Also ensure that the ground traces of external components do not cause variations
on the ground voltage. The ground lines must be as short and thick as possible to reduce line impedance.
5.
6.
Recommended Operating Conditions
The function and operation of the IC are guaranteed within the range specified by the recommended operating
conditions. The characteristic values are guaranteed only under the conditions of each item specified by the electrical
characteristics.
Inrush Current
When power is first supplied to the IC, it is possible that the internal logic may be unstable and inrush current may flow
instantaneously due to the internal powering sequence and delays, especially if the IC has more than one power
supply. Therefore, give special consideration to power coupling capacitance, power wiring, width of ground wiring, and
routing of connections.
7.
8.
Operation Under Strong Electromagnetic Field
Operating the IC in the presence of a strong electromagnetic field may cause the IC to malfunction.
Testing on Application Boards
When testing the IC on an application board, connecting a capacitor directly to a low-impedance output pin may
subject the IC to stress. Always discharge capacitors completely after each process or step. The IC’s power supply
should always be turned off completely before connecting or removing it from the test setup during the inspection
process. To prevent damage from static discharge, ground the IC during assembly and use similar precautions during
transport and storage.
9.
Inter-pin Short and Mounting Errors
Ensure that the direction and position are correct when mounting the IC on the PCB. Incorrect mounting may result in
damaging the IC. Avoid nearby pins being shorted to each other especially to ground, power supply and output pin.
Inter-pin shorts could be due to many reasons such as metal particles, water droplets (in very humid environment) and
unintentional solder bridge deposited in between pins during assembly to name a few.
10. Unused Input Pins
Input pins of an IC are often connected to the gate of a MOS transistor. The gate has extremely high impedance and
extremely low capacitance. If left unconnected, the electric field from the outside can easily charge it. The small charge
acquired in this way is enough to produce a significant effect on the conduction through the transistor and cause
unexpected operation of the IC. So unless otherwise specified, unused input pins should be connected to the power
supply or ground line.
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Operational Notes – continued
11. Regarding the Input Pin of the IC
This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them
isolated. P-N junctions are formed at the intersection of the P layers with the N layers of other elements, creating a
parasitic diode or transistor. For example (refer to figure below):
When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.
When GND > Pin B, the P-N junction operates as a parasitic transistor.
Parasitic diodes inevitably occur in the structure of the IC. The operation of parasitic diodes can result in mutual
interference among circuits, operational faults, or physical damage. Therefore, conditions that cause these diodes to
operate, such as applying a voltage lower than the GND voltage to an input pin (and thus to the P substrate) should be
avoided.
Resistor
Transistor (NPN)
Pin A
Pin B
Pin B
B
E
C
Pin A
B
C
E
P
P+
P+
N
P+
P
P+
N
N
N
N
N
N
N
Parasitic
Elements
Parasitic
Elements
P Substrate
GND GND
P Substrate
GND
GND
Parasitic
Elements
Parasitic
Elements
N Region
close-by
Figure 97. Example of monolithic IC structure
12. Ceramic Capacitor
When using a ceramic capacitor, determine a capacitance value considering the change of capacitance with
temperature and the decrease in nominal capacitance due to DC bias and others.
13. Area of Safe Operation (ASO)
Operate the IC such that the output voltage, output current, and the maximum junction temperature rating are all within
the Area of Safe Operation (ASO).
14. Thermal Shutdown Circuit(TSD)
This IC has a built-in thermal shutdown circuit that prevents heat damage to the IC. Normal operation should always
be within the IC’s maximum junction temperature rating. If however the rating is exceeded for a continued period, the
junction temperature (Tj) will rise which will activate the TSD circuit that will turn OFF power output pins. When the Tj
falls below the TSD threshold, the circuits are automatically restored to normal operation.
Note that the TSD circuit operates in a situation that exceeds the absolute maximum ratings and therefore, under no
circumstances, should the TSD circuit be used in a set design or for any purpose other than protecting the IC from
heat damage.
15. Over Current Protection Circuit (OCP)
This IC incorporates an integrated overcurrent protection circuit that is activated when the load is shorted. This
protection circuit is effective in preventing damage due to sudden and unexpected incidents. However, the IC should
not be used in applications characterized by continuous operation or transitioning of the protection circuit.
16. Disturbance Light
In a device where a portion of silicon is exposed to light such as in a WL-CSP and chip products, IC characteristics
may be affected due to photoelectric effect. For this reason, it is recommended to come up with countermeasures that
will prevent the chip from being exposed to light.
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BD9F800MUX-Z
Ordering Information
B D 9
F
8
0
0 M U X
-
Z E 2
Part Number
Package
MUX: VQFN11X3535A
Packaging and forming specification
E2: Embossed tape and reel
Marking Diagram
VQFN11X3535A (TOP VIEW)
Part Number Marking
B D 9 F 8
0 0 M U X
LOT Number
Pin 1 Mark
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Physical Dimension and Packing Information
Package Name
VQFN11X3535A
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BD9F800MUX-Z
Revision History
Date
Revision
Changes
31.Jul.2017
19.Mar.2018
27.Dec.2018
001
002
003
Created
Revised Tape Quantity
Revised Part Number
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Notice
Precaution on using ROHM Products
1. Our Products are designed and manufactured for application in ordinary electronic equipment (such as AV equipment,
OA equipment, telecommunication equipment, home electronic appliances, amusement equipment, etc.). If you
intend to use our Products in devices requiring extremely high reliability (such as medical equipment (Note 1), transport
equipment, traffic equipment, aircraft/spacecraft, nuclear power controllers, fuel controllers, car equipment including car
accessories, safety devices, etc.) and whose malfunction or failure may cause loss of human life, bodily injury or
serious damage to property (“Specific Applications”), please consult with the ROHM sales representative in advance.
Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way responsible or liable for any
damages, expenses or losses incurred by you or third parties arising from the use of any ROHM’s Products for Specific
Applications.
(Note1) Medical Equipment Classification of the Specific Applications
JAPAN
USA
EU
CHINA
CLASSⅢ
CLASSⅣ
CLASSⅡb
CLASSⅢ
CLASSⅢ
CLASSⅢ
2. ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor
products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate
safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which
a failure or malfunction of our Products may cause. The following are examples of safety measures:
[a] Installation of protection circuits or other protective devices to improve system safety
[b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure
3. Our Products are designed and manufactured for use under standard conditions and not under any special or
extraordinary environments or conditions, as exemplified below. Accordingly, ROHM shall not be in any way
responsible or liable for any damages, expenses or losses arising from the use of any ROHM’s Products under any
special or extraordinary environments or conditions. If you intend to use our Products under any special or
extraordinary environments or conditions (as exemplified below), your independent verification and confirmation of
product performance, reliability, etc, prior to use, must be necessary:
[a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents
[b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust
[c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2,
H2S, NH3, SO2, and NO2
[d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves
[e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items
[f] Sealing or coating our Products with resin or other coating materials
[g] Use of our Products without cleaning residue of flux (Exclude cases where no-clean type fluxes is used.
However, recommend sufficiently about the residue.) ; or Washing our Products by using water or water-soluble
cleaning agents for cleaning residue after soldering
[h] Use of the Products in places subject to dew condensation
4. The Products are not subject to radiation-proof design.
5. Please verify and confirm characteristics of the final or mounted products in using the Products.
6. In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse, is applied,
confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power
exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect
product performance and reliability.
7. De-rate Power Dissipation depending on ambient temperature. When used in sealed area, confirm that it is the use in
the range that does not exceed the maximum junction temperature.
8. Confirm that operation temperature is within the specified range described in the product specification.
9. ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in
this document.
Precaution for Mounting / Circuit board design
1. When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product
performance and reliability.
2. In principle, the reflow soldering method must be used on a surface-mount products, the flow soldering method must
be used on a through hole mount products. If the flow soldering method is preferred on a surface-mount products,
please consult with the ROHM representative in advance.
For details, please refer to ROHM Mounting specification
Notice-PGA-E
Rev.004
© 2015 ROHM Co., Ltd. All rights reserved.
Precautions Regarding Application Examples and External Circuits
1. If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the
characteristics of the Products and external components, including transient characteristics, as well as static
characteristics.
2. You agree that application notes, reference designs, and associated data and information contained in this document
are presented only as guidance for Products use. Therefore, in case you use such information, you are solely
responsible for it and you must exercise your own independent verification and judgment in the use of such information
contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses
incurred by you or third parties arising from the use of such information.
Precaution for Electrostatic
This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper
caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be
applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron,
isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).
Precaution for Storage / Transportation
1. Product performance and soldered connections may deteriorate if the Products are stored in the places where:
[a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2
[b] the temperature or humidity exceeds those recommended by ROHM
[c] the Products are exposed to direct sunshine or condensation
[d] the Products are exposed to high Electrostatic
2. Even under ROHM recommended storage condition, solderability of products out of recommended storage time period
may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is
exceeding the recommended storage time period.
3. Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads
may occur due to excessive stress applied when dropping of a carton.
4. Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of
which storage time is exceeding the recommended storage time period.
Precaution for Product Label
A two-dimensional barcode printed on ROHM Products label is for ROHM’s internal use only.
Precaution for Disposition
When disposing Products please dispose them properly using an authorized industry waste company.
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Since concerned goods might be fallen under listed items of export control prescribed by Foreign exchange and Foreign
trade act, please consult with ROHM in case of export.
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1. All information and data including but not limited to application example contained in this document is for reference
only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any
other rights of any third party regarding such information or data.
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third parties with respect to the Products or the information contained in this document. Provided, however, that ROHM
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manufacture or sell products containing the Products, subject to the terms and conditions herein.
Other Precaution
1. This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM.
2. The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written
consent of ROHM.
3. In no event shall you use in any way whatsoever the Products and the related technical information contained in the
Products or this document for any military purposes, including but not limited to, the development of mass-destruction
weapons.
4. The proper names of companies or products described in this document are trademarks or registered trademarks of
ROHM, its affiliated companies or third parties.
Notice-PGA-E
Rev.004
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Daattaasshheeeett
General Precaution
1. Before you use our Products, you are requested to carefully read this document and fully understand its contents.
ROHM shall not be in any way responsible or liable for failure, malfunction or accident arising from the use of any
ROHM’s Products against warning, caution or note contained in this document.
2. All information contained in this document is current as of the issuing date and subject to change without any prior
notice. Before purchasing or using ROHM’s Products, please confirm the latest information with a ROHM sales
representative.
3. The information contained in this document is provided on an “as is” basis and ROHM does not warrant that all
information contained in this document is accurate and/or error-free. ROHM shall not be in any way responsible or
liable for any damages, expenses or losses incurred by you or third parties resulting from inaccuracy or errors of or
concerning such information.
Notice – WE
Rev.001
© 2015 ROHM Co., Ltd. All rights reserved.
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本IC是内置高边FET的二极管整流式降压型开关稳压器，支持在4.5V～42V的电源电压范围内工作。该产品通过电流模式控制实现了高速负载响应和简单的相位补偿设置。例如在小型二次侧电源应用中，可以将12V、24V等电源降压后输出3.3V、5V等电压。另外，该产品还具有与外部CLK同步的功能，可以进行噪声管理。本IC是为提高生产效率而对本系列产品中的BD9G401EFJ-M变更生产线后形成的型号，在新项目选型时，建议选择该型号，在技术规格书中的保证特性并没有差异。此外，由于文档和设计模型等也没有差异，因此除非另有说明，ROHM将公开BD9G401EFJ-ME2的数据。
ROHM
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