BD9S111NUX-C_技术文档

Datasheet

2.7 V to 5.5 V Input, 1 A

Single Synchronous Buck DC/DC Converter

for Automotive

BD9S11xNUX-C series

General Description

Key Specifications

BD9S11xNUX-C series is a synchronous buck DC/DC

Converter with built-in low On Resistance power

MOSFETs. It is capable of providing current up to 1 A.

Small inductor is applicable due to high switching

frequency of 2.2 MHz. It is a current mode control

DC/DC Converter and features high-speed transient

response. It has an integrated feedback resistor that

sets the output voltage to 1.2 V/1.8 V and a built-in

phase compensation circuit. Applications can be

created with a few external components.



Input Voltage:

2.7 V to 5.5 V

Output Voltage:

BD9S110NUX-C

BD9S111NUX-C

1.2 V(Typ)

1.8 V(Typ)

1 A(Max)



Output Current:

Switching Frequency:

High Side FET ON Resistance:

Low Side FET ON Resistance:

Shutdown Circuit Current:

Operating Temperature:

2.2 MHz(Typ)

270 mΩ(Typ)

180 mΩ(Typ)

0 μA(Typ)

-40 °C to +125 °C

Features

Package

VSON008X2020

W(Typ) x D(Typ) x H(Max)

2.00 mm x 2.00 mm x 0.60 mm



AEC-Q100 Qualified^{(Note 1)}

Single Synchronous Buck DC/DC Converter

Adjustable Soft Start Function

Output Discharge Function

Power Good Output

Input Under Voltage Lockout Protection (UVLO)

Short Circuit Protection (SCP)

Output Over Voltage Protection (OVP)

Over Current Protection (OCP)

Thermal Shutdown Protection (TSD)

(Note 1) Grade 1

Applications



Automotive Equipment

Other Electronic Equipment

VSON008X2020

Typical Application Circuit

V_IN

VIN

PGD

SW

C_IN1

V_EN

V_OUT

EN

SS

L₁

C_OUT1

GND

VOUT

Figure 1. Application Circuit

〇Product structure : Silicon integrated circuit 〇This product has no designed protection against radioactive rays

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Pin Configuration

SW

1

2

3

4

8

7

6

5

GND

VIN

EXP-PAD

SS

EN

VOUT

PGD

(TOP VIEW)

Pin Descriptions

Pin No.

Pin Name

Function

1, 2

SW

Switch pin. These pins are connected to the drain of the High Side FET and the Low Side FET.

Pin for setting the soft start time. The rise time of the output voltage can be specified by

connecting a capacitor to this pin. See page 18 for how to calculate the capacitance..

3

4

5

SS

VOUT

PGD

V_OUTfeedback pin. Connect to output voltage sense point.

Power Good pin, an open drain output. It is need to be pulled up to the power supply with the

resistor. See page 12 for setting the resistance.

Pin for controlling the device. Turning this pin Low forces the device to enter the shutdown

mode. Turning this pin High makes the device to start up.

6

EN

Power supply pin. Connecting a 10 µF(Typ) ceramic capacitor is recommended. The detail of a

selection is described in page 16.

7

8

-

VIN

GND

Ground pin.

A backside heat dissipation pad. Connecting to the internal PCB ground plane by using via

provides excellent heat dissipation characteristics.

EXP-PAD

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Block Diagram

EN

VIN

Slope

6

3

7

VREF

SS

Soft

Start

Error

PWM

Amplifier

Comparator

R

S

Q

VOUT

Driver

Logic

4

SW

V_OUT

1

2

OCP

OSC

UVLO

SCP

VIN

R_Discharge

OVP

TSD

GND

Power

Good

8

5

PGD

Figure 2. Block Diagram

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Description of Blocks

1. VREF

The VREF block generates the internal reference voltage.

2. UVLO (Under Voltage Lockout)

The UVLO block is for under voltage lockout protection. It will shutdown the device when the V_INfalls to 2.45 V(Typ) or

lower. The threshold voltage has a hysteresis of 100 mV(Typ).

3. SCP (Short Circuit Protection)

This is the short circuit protection circuit. After soft start is judged to be completed, if the VOUT pin voltage falls to

70 %(Typ) of the voltage setting or less and remain in that state for 1 ms(Typ), output MOSFET will turn OFF for 14

ms(Typ) and then restart the operation.

4. OVP (Over Voltage Protection)

This is the output over voltage protection circuit. When the VOUT pin voltage becomes +15 %(Typ) of the voltage setting

or more, it turns the output MOSFET OFF. After output voltage falls +10 %(Typ) of the voltage setting or less, the output

MOSFET returns to normal operation.

5. TSD (Thermal Shutdown)

This is the thermal shutdown circuit. It will shutdown the device when the junction temperature (Tj) reaches to 175 °C(Typ)

or more. When the Tj falls below the TSD threshold, the circuits are automatically restored to normal operation with

hysteresis of 25 °C(Typ).

6. OCP (Over Current Protection)

The Over Current Protection function operates by limiting the current that flows through High Side FET at each cycle of

the switching frequency.

7. Soft Start

The Soft Start circuit slows down the rise of output voltage during startup, which allows the prevention of output voltage

overshoot. The soft start time of the output voltage can be specified by connecting a capacitor to the SS pin. See page 18

for how to calculate the capacitance. A built-in soft start function is provided and a soft start is initiated in 1 ms(Typ) when

the SS pin is open.

8. Error Amplifier

The Error Amplifier block is an error amplifier and its inputs are the reference voltage and the VOUT pin voltage.

9. PWM Comparator

The PWM Comparator block compares the output voltage of the Error Amplifier and the Slope signal to determine the

output switching pulse duty.

10.OSC (Oscillator)

This block generates the oscillating frequency.

11.Driver Logic

This block controls switching operation and various protection functions.

12.Power Good

When the VOUT pin voltage reaches within ±10 %(Typ) of the setting voltage, the built-in Nch MOSFET turns OFF and the

PGD output turns high. In addition, the PGD output turns low when the VOUT pin voltage reaches outside ±15 %(Typ) of

the voltage setting.

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Absolute Maximum Ratings

Parameter

Symbol

Rating

Unit

Input Voltage

V_IN

V_EN

-0.3 to +7

-0.3 to V_IN

-0.3 to +7

-0.3 to V_IN

150

V

EN Voltage

PGD Voltage

V_PGD

V

VOUT, SS Voltage

Maximum Junction Temperature

Storage Temperature Range

V_OUT,V_SS

Tjmax

Tstg

V

°C

-55 to +150

°C

Caution 1: Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit

between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is

operated over the absolute maximum ratings.

Caution 2: Should by any chance the maximum junction temperature rating be exceeded the rise in temperature of the chip may result in deterioration of the

properties of the chip. In case of exceeding this absolute maximum rating, design a PCB with thermal resistance taken into consideration by

increasing board size and copper area so as not to exceed the maximum junction temperature rating.

Thermal Resistance^{(Note 1)}

Thermal Resistance (Typ)

Parameter

Symbol

Unit

1s^{(Note 3)}

2s2p^{(Note 4)}

VSON008X2020

Junction to Ambient

Junction to Top Characterization Parameter^{(Note 2)}

θ_JA

309.5

53

77.1

12

°C/W

Ψ_JT

(Note 1) Based on JESD51-2A(Still-Air).

(Note 2) The thermal characterization parameter to report the difference between junction temperature and the temperature at the top center of the outside

surface of the component package.

(Note 3) Using a PCB board based on JESD51-3.

(Note 4) Using a PCB board based on JESD51-5, 7.

Layer Number of

Measurement Board

Material

FR-4

Board Size

Single

114.3 mm x 76.2 mm x 1.57 mmt

Top

Copper Pattern

Thickness

Footprints and Traces

70 μm

Layer Number of

Measurement Board

Thermal Via^{(Note 5)}

Material

FR-4

Board Size

114.3 mm x 76.2 mm x 1.6 mmt

2 Internal Layers

Pitch

Diameter

4 Layers

1.20 mm

Φ0.30 mm

Top

Copper Pattern

Bottom

Thickness

Copper Pattern

Thickness

Copper Pattern

Thickness

Footprints and Traces

70 μm

74.2 mm x 74.2 mm

35 μm

74.2 mm x 74.2 mm

70 μm

(Note 5) This thermal via connects with the copper pattern of all layers.

Recommended Operating Conditions

Parameter

Symbol

Min

Max

Unit

Input Voltage

V_IN

Ta

2.7

-40

-

5.5

+125

1

V

°C

A

Operating Temperature

Output Current

I_OUT

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Electrical Characteristics (Unless otherwise specified Ta=Tj=-40 °C to +125 °C, V_IN=5 V, V_EN=5 V)

Limit

Parameter

Symbol

Unit

Conditions

Min

Typ

Max

VIN

Shutdown Circuit Current

Circuit Current

I_SDN

I_CC

-

0

10

µA

V_EN=0 V, Ta=25 °C

I_OUT=0 mA

Non-switching, Ta=25 °C

250

400

550

UVLO Detection Voltage

UVLO Release Voltage

UVLO Hysteresis Voltage

ENABLE

V_UVLO1

V_UVLO2

2.30

2.40

50

2.45

2.55

100

2.60

2.70

125

V

V_INFalling

V_INRising

V_UVLO-HYS

mV

EN Threshold Voltage High

EN Threshold Voltage Low

EN Input Current

V_ENH

V_ENL

I_EN

1.0

GND

2

-

V_IN

0.4

8

V

5

µA

V_EN=5 V, Ta=25 °C

Output Voltage

Output Voltage(BD9S110NUX-C)

Output Voltage(BD9S111NUX-C)

Soft Start

V_OUT

1.182

1.773

1.200

1.800

1.218

1.827

V

V_IN= 3.0 V to 5.5 V

V_IN=5.0 V,

The SS Pin OPEN

V_IN=3.3 V,

0.5

1.0

2.0

ms

Soft Start Time

t_SS

I_SS

f_SW

0.6

1.2

2.4

ms

µA

The SS Pin OPEN

SS Charge Current

Switching Frequency

Power Good

-1.4

-1.0

-0.6

2.0

2.2

2.4

MHz

V_OUT

x 0.80

V_OUT

x 0.85

V_OUT

x 1.10

V_OUT

x 1.05

V_OUT

x 0.85

V_OUT

x 0.90

V_OUT

x 1.15

V_FB

x 1.10

V_OUT

x 0.90

V_OUT

x 0.95

V_OUT

x 1.20

V_OUT

x 1.15

PGD Falling (Fault) Voltage

PGD Rising (Good) Voltage

PGD Rising (Fault) Voltage

PGD Falling (Good) Voltage

V_{PGDTH_FF}

V_{PGDTH_RG}

V_{PGDTH_RF}

V_{PGDTH_FG}

V

V_OUTFalling

V_OUTRising

V_OUTFalling

PGD Output Leakage Current

PGD FET ON Resistance

PGD Output Low Level Voltage

Switch MOSFET

I_LEAKPGD

R_PGD

-

0

2

µA

Ω

V_PGD=5 V, Ta=25 °C

30

60

120

0.12

V_PGDL

0.03

0.06

V

I_PGD=1 mA

120

150

80

270

330

180

210

470

550

300

350

mΩ

V_IN=5.0 V

V_IN=3.3 V

V_IN=5.0 V

High Side FET ON Resistance

Low Side FET ON Resistance

R_ONH

R_ONL

I_LEAKSWH

I_LEAKSWL

100

V_IN=3.3 V

V_IN=5.5 V, V_SW=0 V,

Ta=25 °C

V_IN=5.5 V, V_SW=5.5 V,

Ta=25 °C

High Side FET Leakage Current

Low Side FET Leakage Current

-

0

5

μA

SW Current of Over Current

Protection^{(Note 1)}

SW Discharge Resistance

I_OCP

R_DIS

1.2

1.8

2.5

A

450

650

850

Ω

SCP, OVP

Short Circuit Protection Detection

Voltage

Output Over Voltage Protection

V_OUT

x 0.6

V_OUT

x 0.7

V_OUT

x 0.8

V_OUT

V_SCP

V_OVP

V

Detection Voltage

x 1.10

x 1.15

x 1.20

(Note 1) This is design value. Not production tested.

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Typical Performance Curves

Unless otherwise specified V_IN= V_EN

10

550

500

450

400

350

300

250

V_EN= 0 V

9

8

7

6

5

4

V_IN= 5.0 V

3

2

1

0

V_IN= 3.3 V

-50 -25

0

25

50

75 100 125

-50 -25

0

25

50

75 100 125

Temperature[°C]

Figure 3. Shutdown Circuit Current vs Temperature

Figure 4. Circuit Current vs Temperature

1.218

1.212

1.206

1.200

1.194

1.188

1.182

2.40

V_IN= 3.3 V

2.35

2.30

2.25

2.20

2.15

2.10

2.05

2.00

V_IN= 5.0 V

V_IN= 3.3 V

V_IN= 5.0 V

-50 -25

0

25

50

75 100 125

-50 -25

0

25

50

75 100 125

Temperature[°C]

Figure 5. Switching Frequency vs Temperature

Figure 6. VOUT Pin Voltage vs Temperature

(BD9S110NUX-C)

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Typical Performance Curves – continued

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

1.827

1.818

C_SS= OPEN

V_IN= 3.3 V

V_IN= 5.0 V

1.809

1.800

1.791

V_IN= 5.0 V

V_IN= 3.3 V

1.782

1.773

-50 -25

0

25

50

75 100 125

-50 -25

0

25

50

75 100 125

Temperature[°C]

Figure 7. VOUT Pin Voltage vs Temperature

(BD9S111NUX-C)

Figure 8. Soft Start Time vs Temperature

-0.60

-0.70

-0.80

-0.90

-1.00

-1.10

-1.20

-1.30

-1.40

550

500

450

400

350

300

250

200

150

100

V_IN= 3.3 V

V_IN= 5.0 V

-50 -25

0

25

50

75 100 125

-50 -25

0

25

50

75 100 125

Temperature[°C]

Figure 9. SS Charge Current vs Temperature

Figure 10. High Side FET ON Resistance vs Temperature

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Typical Performance Curves – continued

1.44

1.38

1.32

1.26

1.20

1.14

1.08

1.02

0.96

350

320

V_IN= 5.0 V

290

V_IN= 3.3 V

260

Rising Fault

Rising Good

Falling Good

230

200

170

Falling Fault

V_IN= 5.0 V

140

110

80

-50 -25

0

25

50

75 100 125

-50 -25

0

25

50

75 100 125

Temperature[°C]

Figure 11. Low Side FET ON Resistance vs Temperature

Figure 12. PGD Threshold Voltage vs Temperature

(BD9S110NUX-C)

120

2.16

V_IN= 5.0 V

110

100

90

2.07

1.98

Rising Fault

1.89

Falling Good

80

1.80

70

Rising Good

1.71

60

Falling Fault

1.62

1.53

1.44

50

40

30

-50 -25

0

25

50

75 100 125

-50 -25

0

25

50

75 100 125

Temperature[°C]

Figure 13. PGD Threshold Voltage vs Temperature

(BD9S111NUX-C)

Figure 14. PGD FET ON Resistance vs Temperature

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Typical Performance Curves – continued

1.0

0.9

0.8

0.7

0.6

0.5

0.4

2.70

2.65

V_IN= 5.0 V

Release

2.60

Rising

2.55

2.50

2.45

Falling

2.40

Detection

2.35

2.30

-50 -25

0

25

50

75 100 125

-50 -25

0

25

50

75 100 125

Temperature[°C]

Figure 15. UVLO Voltage vs Temperature

Figure 16. EN Threshold Voltage vs Temperature

10

9

8

7

6

5

4

3

2

1

0

V_IN= 5.0 V

2.4

2.2

2

V_EN= 5.0 V

1.8

1.6

1.4

1.2

V_EN= 3.3 V

-50

-25

0

25

50

75

100 125

-50 -25

0

25

50

75

100 125

Temperature[°C]

Figure 17. EN Input Current vs Temperature

Figure 18 SW Current of Over Current Protection

vs Temperature

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Typical Performance Curves – continued

1.44

1.38

1.32

1.26

1.20

1.14

1.08

0.96

V_IN= 5.0 V

0.92

0.88

0.84

0.80

0.76

0.72

Release

Detection

-50 -25

0

25

50

75 100 125

-50 -25

0

25

50

75 100 125

Temperature[°C]

Figure 19. Short Circuit Protection Detection Voltage

vs Temperature (BD9S110NUX-C)

Figure 20. Short Circuit Protection Detection Voltage

vs Temperature (BD9S111NUX-C)

1.44

2.16

V_IN= 5.0 V

2.13

2.10

2.07

2.04

2.01

1.98

1.42

1.40

1.38

1.36

1.34

1.32

-50 -25

0

25

50

75 100 125

-50 -25

0

25

50

75 100 125

Temperature[°C]

Figure 21. Output Over Voltage Protection Detection Voltage

vs Temperature (BD9S110NUX-C)

Figure 22. Output Over Voltage Protection Detection Voltage

vs Temperature (BD9S111NUX-C)

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Function Explanations

1.

Enable Control

The device shutdown can be controlled by the voltage applied to the EN pin. When V_ENbecomes 1.0 V or more, the

internal circuit is activated and the device starts up with soft start. When V_ENbecomes 0.4 V or less, the device will be

shutdown.

V_IN

0

t

V_EN

V_ENH

V_ENL

0

V_OUT

V_OUT× 0.90 (Typ)

0

t_SS

t_WAIT

200 µs(Typ)

Figure 23. Enable ON/OFF Timing Chart

2.

Power Good Function

When the VOUT pin voltage reaches within ±10 %(Typ) of the voltage setting, the PGD pin open drain MOSFET turns

OFF and the output turns high. In addition, when the VOUT pin voltage reaches outside ±15 %(Typ) of the voltage

setting, the PGD pin open drain MOSFET turns ON and the PGD pin is pulled down with impedance of 60 Ω(Typ). It is

recommended to use a pull-up resistor of 2 kΩ to 100 kΩ for the power source

+15 %(Typ)

+10 %(Typ)

V_OUT

-10 %(Typ)

-15 %(Typ)

PGD

Figure 24. Power Good Timing Chart

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Function Explanations – continued

3.

Output Discharge Function

When even one of the following conditions is satisfied, output is discharged with 650 Ω(Typ) resistance through the

SW pin.

• V_ENbecomes 0.4 V or less

• V_INbecomes 2.45 V(Typ) or less(UVLO)

• V_OUTbecomes 70 %(Typ) of the voltage setting or less and remains there for 1ms(Typ)(SCP)

• V_OUTbecomes +15 %(Typ) of the voltage setting or more(OVP)

• Tj becomes 175 °C(Typ) or more(TSD)

When all of the above conditions are released, output discharge is stopped.

4.

Pre-bias Function

The device can start up without to sink large current from the output even when the output is pre-biased. For example,

if the device is turned ON/OFF by the EN pin, the output is discharged with the resistor of 650 Ω(Typ) during the EN

OFF section and the delay section of 200 μs(Typ), but both Output MOSFETs are turned off. After that, when the

internal SS voltage reaches 40 mV(Typ) higher than the internal FB voltage, the device starts switching and the output

rises to the set voltage with soft start.

t_WAIT

200 µs(Typ)

V_EN

Soft Start

V_OUT

0 V

Internal SS

40 mV(Typ)

Internal FB

Output MOSFET OFF

SW

Discharge

OFF

ON

OFF

Figure 25. Pre-bias Timing Chart

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Protection

1.

Short Circuit Protection (SCP)

The Short Circuit Protection block compares the VOUT pin voltage with the internal reference voltage VREF. When the

VOUT pin voltage has fallen to 70 %(Typ) of the voltage setting or less and remained there for 1 ms(Typ), SCP stops

the operation for 14 ms(Typ) and subsequently initiates a restart. This protection circuit is effective in preventing

damage due to sudden and unexpected incidents. However, the device should not be used in applications

characterized by continuous operation of the protection circuit (e.g. when a load that significantly exceeds the output

current capability of the chip is connected at all times).

Short Circuit

Protection

Short Circuit

Protection Operation

The EN Pin

The VOUT Pin

≤ V_OUTx 0.7(Typ)

ON

OFF

1.0 V or higher

0.4 V or lower

Enabled

Disabled

≥ V_OUTx 0.75(Typ)

-

1 ms (Typ)

t_SS

V_OUT

V_SCP: V_OUTx 0.7(Typ)

SCP OFF : V_OUTx 0.75(Typ)

SW

LOW

I_OCP

Inductor Current

(Output Load

Current)

Internal

HICCUP

Delay Signal

14 ms (Typ)

SCP Reset

Figure 26. Short Circuit Protection (SCP) Timing Chart

2.

Over Current Protection (OCP)

The Over Current Protection function operates by limiting the current that flows through High Side FET at each cycle

of the switching frequency. This protection circuit is effective in preventing damage due to sudden and unexpected

incidents. However, the device should not be used in applications characterized by continuous operation of the

protection circuit (e.g. when a load that significantly exceeds the output current capability of the chip is connected at all

times).

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Protection – continued

3.

Under Voltage Lockout Protection (UVLO)

It shuts down the device when the VIN pin falls to 2.45 V(Typ) or lower.

The threshold voltage has a hysteresis of 100 mV(Typ).

V_IN(= V_EN

)

V_UVLO-HYS

100mV (Typ)

V_UVLO2: 2.55 V(Typ)

V_UVLO1: 2.45 V(Typ)

0 V

t_WAIT

200 µs(Typ)

V_OUT

t_SS

SW

Normal operation

UVLO

Normal operation

Figure 27. UVLO Timing Chart

4.

5.

Thermal Shutdown

This is the thermal shutdown circuit that prevents heat damage to the IC. Normal operation should always be within

the IC’s maximum junction temperature rating. However, if the rating is exceeded for a continued period and the

junction temperature (Tj) rises to 175 °C(Typ), the TSD circuit activates and the output MOSFET turns OFF. When the

Tj falls below the TSD threshold, the circuits are automatically restored to normal operation. Note that the TSD circuit

operates in a situation that exceeds the absolute maximum ratings and therefore, under no circumstances, should the

TSD circuit be used in a set design or for any purpose other than protecting the IC from heat damage.

Over Voltage Protection (OVP)

The device incorporates an over voltage protection circuit to minimize the output voltage overshoot when recovering

from strong load transients or output fault conditions. If the VOUT pin voltage becomes over or equal to +15 %(Typ) of

the voltage setting, which is Output Over Voltage Protection Detection Voltage, the MOSFET on the output stage is

turned OFF to prevent the increase in the output voltage. After the detection, the switching operation resumes if the

output decreases and the over voltage state is released. Output Over Voltage Protection Detection Voltage and

release voltage have a hysteresis of 5 %.

V_OVP: V_OUTx 1.15 (Typ)

hys : 5 %

V_OUT

SW

Internal OVP

Signal

Figure 28. OVP Timing Chart

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Selection of Components Externally Connected

Contact us if not use the recommended constant in this section.

Necessary parameters in designing the power supply are as follows:

Table 1. Application Specification

Parameter

Input Voltage

Symbol

V_IN

Example Value

5.0 V

Output Voltage(BD9S110NUX-C)

Output Voltage(BD9S111NUX-C)

Switching Frequency

Output Capacitor

Soft Start Time

V_OUT

f_SW

C_OUT

t_SS

1.2 V(Typ)

1.8 V(Typ)

2.2 MHz(Typ)

10 μF

8.0 ms(Typ)

1.0 A

Maximum Output Current

I_OUTMAX

Application Example

R₁

V_IN

VIN

PGD

SW

PGD

C_IN1

V_EN

V_OUT

EN

SS

L₁

R₁₀₀

C_OUT1

GND

VOUT

C_SS

Figure 29. Typical Application

1. Switching Frequency

The switching frequency f_SWis fixed at 2.2 MHz(Typ) inside the IC.

2. Selection of Input Capacitor

Use ceramic type capacitor for the input capacitor C_IN1. C_IN1is used to suppress the input ripple noise and this capacitor

is effective by being placed as close as possible to the VIN pin. Set the capacitor value for C_IN1so that it does not fall to

4.7 μF considering the capacitor value variances, temperature characteristics, DC bias characteristics, aging

characteristics, and etc. Use components which are comparatively same with the components used in “Application

Example” on page 19. Moreover, factors like the PCB layout and the position of the capacitor may lead to IC malfunction.

Refer to “Notes on the PCB layout Design” on page 23 and 24.

In addition, the capacitor with value 0.1 μF can be added to suppress the high frequency noise as an option.

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Selection of Components Externally Connected – continued

3. Selection of Output LC Filter

In order to supply a continuous current to the load, the DC/DC converter requires an LC filter for smoothing the output

voltage. Use the inductor with value 1.0 μH to 2.2 μH.

V_IN

I_L

Inductor Saturation Current > I_OUTMAX+ ∆I_L/2

L₁

V_OUT

∆I_L

Driver

Maximum Output Current I_OUTMAX

C_OUT

t

Figure 30. Waveform of Current through Inductor

Figure 31. Output LC Filter Circuit

Inductor ripple current ΔI_Lcan be represented by the following equation.

1

(

)

×

∆퐼_퐿= 푉_푂푈푇× 푉 − 푉_푂푈푇

= 4ꢅ5 [mA]

ꢀ푁

ꢁ

ꢂꢃ

×푓 ×퐿

푆푊

ꢄ

where

푉

푉_푂푈푇

ꢆ₁

is the 5.0 V

is the 1.2 V

is the 1.0 µH

ꢀ푁

ꢇ

ꢈꢉ

is the 2.2 MHz (Switching Frequency)

The rated current of the inductor must be larger than the sum of the maximum output current and 1/2 of the inductor

ripple current ΔI_L.

Use ceramic type capacitor for the output capacitor C_OUT.The capacitance value of C_OUTis recommended in the range

between 10 μF and 22 μF. C_OUTaffects the output ripple voltage characteristics. C_OUTmust satisfy the required ripple

voltage characteristics.

The output ripple voltage can be represented by the following equation.

1

∆푉

= ∆퐼_퐿× ꢊꢋ_퐸ꢈ푅

+

ꢏ [V]

푆푊

푅푃퐿

8×퐶

×푓

ꢌꢍꢎ

Where

ꢋ_퐸ꢈ푅is the Equivalent Series Resistance (ESR) of the output capacitor

The output ripple voltage ΔV_RPLcan be represented by the following equation.

1

∆푉

= 0.4ꢅ5 퐴 × ꢊꢅ0 푚훺 + _{8×1ꢐ 휇퐹×2.2 푀퐻푧}ꢏ = 6.5ꢅ [mV]

푅푃퐿

where

ꢑ_푂푈푇

ꢋ_퐸ꢈ푅

is the 10 µF

is the 10 mΩ

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3. Selection of Output LC Filter – continued

In addition, for the total value of capacitance in the output line C_OUT(Max), need to satisfy the value obtained by the

following equation.

(푡

ꢓ2ꢐꢐ 휇푠)×(ꢀ

ꢓꢀ

)

푆푊푆ꢎꢖꢗꢎ

(

)

ꢌꢔꢕ(ꢒ푖푛)

푆푆 ꢒ푖푛

ꢑ_{푂푈푇(푀푎푥)}

<

[F]

ꢁ

ꢌꢍꢎ

where:

퐼_{ꢈꢉꢈ푇ꢘ푅푇}is the maximum output current during startup

퐼_{푂퐶푃(푀ꢙꢚ)}is the minimum OCP operation SW current 1.2 A

ꢛ_{ꢈꢈ(푀ꢙꢚ)}

푉_푂푈푇

is the minimum Soft Start Time

is the output voltage

Startup failure may happen if the limits from the above-mentioned are exceeded. Especially if the capacitance value is

large, over current protection may be activated by the inrush current at startup and prevented to turn on the output.

Please confirm this on the actual application.

Stable transient response and the loop is dependent to C_OUT. Actually, characteristics will vary depending on PCB layout,

arrangement of wiring, kinds of parts used and use conditions(temperature, etc.). Please be sure to check stability and

responsiveness with the actual application.

4. Selection of Soft Start Capacitor

Turning the EN pin signal high activates the soft start function. This causes the output voltage to rise gradually while the

current at startup is placed under control. This allows the prevention of output voltage overshoot and inrush current. The

rise time t_{SS_EXT}depends on the value of the capacitor connected to the SS pin. The capacitance value should be set in

the range between 4700 pF and 0.1 μF.

(

)

×ꢐ.8

퐶

푆푆

ꢀ

ꢛ_{ꢈꢈ_퐸푋푇}

=

[s]

V_EN

푆푆

V_ENH

V_ENL

(

)

×ꢐ.ꢐꢜ

퐶

푆푆

ꢛ_{푂퐹퐹ꢈ퐸푇}

=

[s]

ꢀ

푆푆

0

t

where

V_OUT

ꢛ_{ꢈꢈ_퐸푋푇}is the Soft Start Time

ꢛ_{푂퐹퐹ꢈ퐸푇}is the Internal Delay Time

ꢑ_ꢈꢈ

퐼_ꢈꢈ

is the Capacitor connected to the SS pin

is the SS Charge Current 1.0 µA(Typ)

0

t

t_{SS_EXT}

With C_SS=0.01 μF

150 µs(Typ)+t_OFFSET

(

)

ꢐ.ꢐ1 휇퐹×ꢐ.8

ꢛ_{ꢈꢈ_퐸푋푇}

=

= ꢝ.0 [ms]

Figure 32. Soft Start Timing Chart

1.ꢐ 휇ꢘ

Turning the EN pin High without connecting capacitor to the SS pin and keeping the SS pin either OPEN condition or 10

kΩ to 100 kΩ pull up condition to power source, the output will rise in 1 ms(Typ).

Recommended Parts Manufacturer List

Shown below is the list of the recommended parts manufacturers for reference.

Table 2

Device

Type

Ceramic capacitors

Inductors

Manufacturer

Murata

TDK

URL

www.murata.com

product.tdk.com

www.coilcraft.com

www.cyntec.com

www.murata.com

www.sumida.com

product.tdk.com

www.rohm.com

C

L

Coilcraft

Cyntec

Murata

Sumida

TDK

L

Inductors

L

Inductors

L

Inductors

L

Inductors

R

Resistors

ROHM

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Application Example 1

Table 3. Specification Example 1

Parameter

Product Name

Symbol

IC

V_IN

Example Value

BD9S110NUX-C

5.0 V, 3.3 V

Supply Voltage

Output Voltage

Soft Start Time

Maximum Output Current

Operation Temperature Range

V_OUT

t_SS

I_OUTMAX

Ta

1.2 V(Typ)

1.0 ms(Typ)

1.0 A

-40 °C to +125 °C

R₁

V_IN

VIN

PGD

SW

PGD

C_IN1

V_EN

V_OUT

EN

SS

L₁

R₁₀₀

C_OUT1

GND

VOUT

C_SS

Figure 33. Reference Circuit 1

Table 4. Parts List 1

No

L₁

Package

2016

2012

-

Parameters

1.0 μH

Part Name(Series)

TFM201610ALMA1R0M

GCM21BR70J106K

GCM21BR71A106K

-

Type

Manufacturer

Inductor

TDK

Murata

-

C_OUT1

10 μF, X7R, 6.3 V

10 μF, X7R, 10 V

SHORT

Ceramic Capacitor

C_IN1

R₁₀₀

R₁

Ceramic Capacitor

-

1005

-

100 kΩ, 1 %, 1/16 W

MCR01MZPF1003

-

Chip Resistor

-

ROHM

-

C_SS

-

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Characteristic Data (Application Examples 1)

V_IN= V_EN, Ta = 25 °C

100

90

80

70

60

80

60

180

135

90

V_IN= 5.0 V

40

20

45

V_IN= 5.0 V

50

0

V_IN= 3.3 V

40

-20

-40

-60

-80

-45

-90

-135

-180

30

20

10

0

Gain

Phase

0.0

0.2

0.4

0.6

0.8

1.0

1

10

100

1000

Output Current [A]

Frequency[kHz]

Figure 34. Efficiency vs Output Current

Figure 35. Frequency Characteristics

(I_OUT=1 A)

Time: 500 ns/div

V_OUT: 20 mV/div

Time: 20 μs/div

V_IN= 5.0 V

V_OUT: 100 mV/div

I_OUT: 400 mA/div

Figure 36. Load Transient Response

(I_OUT=0 A↔1 A)

Figure 37. Output Ripple Voltage

(I_OUT=1 A)

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Application Example 2

Table 5. Specification Example 2

Parameter

Product Name

Symbol

IC

V_IN

Example Value

BD9S111NUX-C

5.0 V, 3.3 V

Supply Voltage

Output Voltage

Soft Start Time

Maximum Output Current

Operation Temperature Range

V_OUT

t_SS

I_OUTMAX

Ta

1.8 V(Typ)

1.0 ms(Typ)

1.0 A

-40 °C to +125 °C

R₁

V_IN

VIN

PGD

SW

PGD

C_IN1

V_EN

V_OUT

EN

SS

L₁

R₁₀₀

C_OUT1

GND

VOUT

C_SS

Figure 38. Reference Circuit 2

Table 6. Parts List 2

No

L₁

Package

2016

2012

-

Parameters

1.0 μH

Part Name(Series)

TFM201610ALMA1R0M

GCM21BR70J106K

GCM21BR71A106K

-

Type

Manufacturer

Inductor

TDK

Murata

-

C_OUT1

10 μF, X7R, 6.3 V

10 μF, X7R, 10 V

SHORT

Ceramic Capacitor

C_IN1

R₁₀₀

R₁

Ceramic Capacitor

-

1005

-

100 kΩ, 1 %, 1/16 W

MCR01MZPF1003

-

Chip Resistor

-

ROHM

-

C_SS

-

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Characteristic Data (Application Examples 2)

V_IN= V_EN, Ta = 25 °C

100

90

80

60

180

135

90

V_IN= 5.0 V

80

40

70

20

45

60

V_IN= 5.0 V

50

40

30

20

10

0

V_IN= 3.3 V

0

-20

-40

-60

-80

-45

-90

-135

-180

Gain

Phase

0.0

0.2

0.4

0.6

0.8

1.0

1

10

100

1000

Output Current [A]

Frequency[kHz]

Figure 39. Efficiency vs Output Current

Figure 40. Frequency Characteristic

(I_OUT=1 A)

Time: 500 ns/div

V_OUT: 20 mV/div

Time: 20 μs/div

V_IN= 5.0 V

V_OUT: 100 mV/div

I_OUT: 400 mA/div

Figure 41. Load Transient Response

(I_OUT=0 A↔1 A)

Figure 42. Output Ripple Voltage

(I_OUT=1 A)

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PCB Layout Design

PCB layout design for DC/DC converter is very important. Appropriate layout can avoid various problems concerning power

supply circuit. Figure 43-a to 43-c show the current path in a buck DC/DC converter circuit. The Loop 1 in Figure 43-a is a

current path when H-side switch is ON and L-side switch is OFF, the Loop 2 in Figure 43-b is when H-side switch is OFF and

L-side switch is ON. The thick line in Figure 43-c shows the difference between Loop1 and Loop2. The current in thick line

change sharply each time the switching element H-side and L-side switch change from OFF to ON, and vice versa. These

sharp changes induce a waveform with harmonics in this loop. Therefore, the loop area of thick line that is consisted by input

capacitor and IC should be as small as possible to minimize noise. For more details, refer to application note of switching

regulator series “PCB Layout Techniques of Buck Converter”.

Loop1

V_IN

V_OUT

L

H-side Switch

C_IN

C_OUT

L-side Switch

GND

Figure 43-a. Current Path when H-side Switch = ON, L-side Switch = OFF

V_IN

V_OUT

L

H-side Switch

C_IN

C_OUT

Loop2

L-side Switch

GND

Figure 43-b. Current Path when H-side Switch = OFF, L-side Switch = ON

V_IN

V_OUT

L

C_IN

C_OUT

H-side FET

L-side FET

GND

Figure 43-c. Difference of Current and Critical Area in Layout

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PCB Layout Design – continued

When designing the PCB layout, please pay extra attention to the following points:

• Connect the input capacitor C_INas close as possible to the VIN pin and GND pin on the same plane as the IC.

• Switching nodes such as SW are susceptible to noise due to AC coupling with other nodes. Route the inductor pattern as

thick and as short as possible.

• Feedback line connected to VOUT pin far from the SW nodes.

• R₁₀₀is provided for the measurement of feedback frequency characteristics (optional). By inserting a resistor into R₁₀₀, it

is possible to measure the frequency characteristics of feedback (phase margin) using FRA etc. R₁₀₀is short-circuited

for normal use.

C_SS

IC

L₁

C_IN

C_OUT

Example of Evaluation Board Layout (Top View)

Example of Evaluation Board Layout (Bottom View)

Figure 44. Example of Evaluation Board Layout

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Power Dissipation

For thermal design, be sure to operate the IC within the following conditions.

(Since the temperatures described hereunder are all guaranteed temperatures, take margin into account.)

1. The ambient temperature Ta is to be 125 °C or less.

2. The chip junction temperature Tj is to be 150 °C or less.

The chip junction temperature Tj can be considered in the following two patterns:

1. To obtain Tj from the package surface center temperature Tt in actual use

ꢞ푗 = ꢞꢛ + 휓_퐽푇× ꢟ [°C]

2. To obtain Tj from the ambient temperature Ta

ꢞ푗 = ꢞꢠ + 휃_퐽ꢘ× ꢟ [°C]

Where:

휓_퐽푇

휃_퐽ꢘ

is junction to top characterization parameter (Refer to page 5)

is junction to ambient (Refer to page 5)

The heat loss W of the IC can be obtained by the formula shown below:

푉_푂푈푇

2

ꢟ = ꢋ_푂푁퐻× 퐼_푂푈푇

×

+ ꢋ_푂푁퐿× 퐼_푂푈푇²ꢡꢅ −

ꢢ

푉

ꢀ푁

1

(

)

+푉 × 퐼_퐶퐶+ × ꢛ푟 + ꢛꢇ × 푉 × 퐼_푂푈푇× ꢇ

[W]

ꢀ푁

ꢈꢉ

2

Where:

ꢋ_푂푁퐻

is the High Side FET ON Resistance (Refer to page 6) [Ω]

is the Low Side FET ON Resistance (Refer to page 6) [Ω]

is the Output Current [A]

ꢋ_푂푁퐿

퐼_푂푈푇

푉_푂푈푇

is the Output Voltage [V]

푉

퐼_퐶퐶

ꢛ푟

ꢛꢇ

ꢇ

ꢈꢉ

is the Input Voltage [V]

ꢀ푁

is the Circuit Current (Refer to page 6) [A]

is the Switching Rise Time [s] (Typ:4 ns)

is the Switching Fall Time [s] (Typ:3 ns)

is the Switching Frequency (Refer to page 6) [Hz]

tr

tf

(4 ns)

(3 ns)

V

IN

2

1. ꢋ_푂푁퐻× 퐼_푂푈푇

1

2

V_SW

2. ꢋ_푂푁퐿× 퐼_푂푈푇

3. ¹× (ꢛ푟 + ꢛꢇ) × 푉 × 퐼_푂× ꢇ

ꢀ푁

ꢈꢉ

2

GND

3

2

ꢅ

ꢇ

ꢈꢉ

Figure 45. SW Waveform

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I/O Equivalence Circuits

1. 2. SW

3. SS

VIN

40 kΩ

SW

SS

GND

625 Ω

100 kΩ

GND

4. VOUT

20 kΩ

10 kΩ

VOUT

R1

Output

Voltage[V]

Part Number

R1[kΩ] R2[kΩ]

GND

BD9S110NUX-C

BD9S111NUX-C

1.2

1.8

35

70

87.5

R2

GND

5. PGD

6. EN

100 kΩ

150 kΩ

EN

PGD

GND

10 kΩ

50 Ω

850 kΩ

GND

GND GND

GND

(Note) Resistance value is Typical.

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Operational Notes

1. Reverse Connection of Power Supply

Connecting the power supply in reverse polarity can damage the IC. Take precautions against reverse polarity when

connecting the power supply, such as mounting an external diode between the power supply and the IC’s power

supply pins.

2. Power Supply Lines

Design the PCB layout pattern to provide low impedance supply lines. Furthermore, connect a capacitor to ground at

all power supply pins. Consider the effect of temperature and aging on the capacitance value when using electrolytic

capacitors.

3. Ground Voltage

Ensure that no pins are at a voltage below that of the ground pin at any time, even during transient condition. However,

pins that drive inductive loads (e.g. motor driver outputs, DC-DC converter outputs) may inevitably go below ground

due to back EMF or electromotive force. In such cases, the user should make sure that such voltages going below

ground will not cause the IC and the system to malfunction by examining carefully all relevant factors and conditions

such as motor characteristics, supply voltage, operating frequency and PCB wiring to name a few.

4. Ground Wiring Pattern

When using both small-signal and large-current ground traces, the two ground traces should be routed separately but

connected to a single ground at the reference point of the application board to avoid fluctuations in the small-signal

ground caused by large currents. Also ensure that the ground traces of external components do not cause variations

on the ground voltage. The ground lines must be as short and thick as possible to reduce line impedance.

5. Recommended Operating Conditions

The function and operation of the IC are guaranteed within the range specified by the recommended operating

conditions. The characteristic values are guaranteed only under the conditions of each item specified by the electrical

characteristics.

6. Inrush Current

When power is first supplied to the IC, it is possible that the internal logic may be unstable and inrush current may flow

instantaneously due to the internal powering sequence and delays, especially if the IC has more than one power

supply. Therefore, give special consideration to power coupling capacitance, power wiring, width of ground wiring, and

routing of connections.

7. Testing on Application Boards

When testing the IC on an application board, connecting a capacitor directly to a low-impedance output pin may

subject the IC to stress. Always discharge capacitors completely after each process or step. The IC’s power supply

should always be turned off completely before connecting or removing it from the test setup during the inspection

process. To prevent damage from static discharge, ground the IC during assembly and use similar precautions during

transport and storage.

8. Inter-pin Short and Mounting Errors

Ensure that the direction and position are correct when mounting the IC on the PCB. Incorrect mounting may result in

damaging the IC. Avoid nearby pins being shorted to each other especially to ground, power supply and output pin.

Inter-pin shorts could be due to many reasons such as metal particles, water droplets (in very humid environment) and

unintentional solder bridge deposited in between pins during assembly to name a few.

9. Unused Input Pins

Input pins of an IC are often connected to the gate of a MOS transistor. The gate has extremely high impedance and

extremely low capacitance. If left unconnected, the electric field from the outside can easily charge it. The small

charge acquired in this way is enough to produce a significant effect on the conduction through the transistor and

cause unexpected operation of the IC. So unless otherwise specified, unused input pins should be connected to the

power supply or ground line.

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Operational Notes – continued

10. Regarding the Input Pin of the IC

This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them

isolated. P-N junctions are formed at the intersection of the P layers with the N layers of other elements, creating a

parasitic diode or transistor. For example (refer to figure below):

When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.

When GND > Pin B, the P-N junction operates as a parasitic transistor.

Parasitic diodes inevitably occur in the structure of the IC. The operation of parasitic diodes can result in mutual

interference among circuits, operational faults, or physical damage. Therefore, conditions that cause these diodes to

operate, such as applying a voltage lower than the GND voltage to an input pin (and thus to the P substrate) should be

avoided.

Resistor

Transistor (NPN)

Pin A

Pin B

B

E

C

Pin A

B

C

E

P

P⁺

N

P⁺

P

P⁺

N

Parasitic

Elements

Parasitic

Elements

P Substrate

GND GND

P Substrate

GND

Parasitic

Elements

Parasitic

Elements

N Region

close-by

Figure 46. Example of Monolithic IC Structure

11. Ceramic Capacitor

When using a ceramic capacitor, determine a capacitance value considering the change of capacitance with

temperature and the decrease in nominal capacitance due to DC bias and others.

12. Thermal Shutdown Circuit (TSD)

This IC has a built-in thermal shutdown circuit that prevents heat damage to the IC. Normal operation should always

be within the IC’s maximum junction temperature rating. If however the rating is exceeded for a continued period, the

junction temperature (Tj) will rise which will activate the TSD circuit that will turn OFF power output pins. When the Tj

falls below the TSD threshold, the circuits are automatically restored to normal operation.

Note that the TSD circuit operates in a situation that exceeds the absolute maximum ratings and therefore, under no

circumstances, should the TSD circuit be used in a set design or for any purpose other than protecting the IC from

heat damage.

13. Over Current Protection Circuit (OCP)

This IC incorporates an integrated overcurrent protection circuit that is activated when the load is shorted. This

protection circuit is effective in preventing damage due to sudden and unexpected incidents. However, the IC should

not be used in applications characterized by continuous operation or transitioning of the protection circuit.

www.rohm.com

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TSZ22111 • 15 • 001

BD9S11xNUX-C series

Ordering Information

B D 9 S 1

1

x N U X -

C E 2

Part Number

Output

Package

VSON008X2020

Product class

Voltage

0 : 1.2 V

1 : 1.8 V

C for Automotive applications

Packaging and forming specification

E2: Embossed tape and reel

Lineup

Orderable

Part Number

Output Current(Max)

Output Voltage(Typ)

Package

1.2 V

1.8 V

BD9S110NUX-CE2

BD9S111NUX-CE2

1 A

VSON008X2020

Marking Diagram

VSON008X2020 (TOP VIEW)

Part Number Marking

LOT Number

Part Number

Marking

Orderable

Part Number

Output Voltage

D9S110

D9S111

1.2 V

1.8 V

BD9S110NUX-CE2

BD9S111NUX-CE2

Pin 1 Mark

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05.Sep.2018 Rev.001

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TSZ22111 • 15 • 001

BD9S11xNUX-C series

Physical Dimension and Packing Information

Package Name

VSON008X2020

www.rohm.com

TSZ22111 • 15 • 001

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05.Sep.2018 Rev.001

30/31

BD9S11xNUX-C series

Revision History

Date

Revision

001

Changes

05.Sep.2018

New Release

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TSZ22111 • 15 • 001

Notice

Precaution on using ROHM Products

(Note 1)

1. If you intend to use our Products in devices requiring extremely high reliability (such as medical equipment

,

aircraft/spacecraft, nuclear power controllers, etc.) and whose malfunction or failure may cause loss of human life,

bodily injury or serious damage to property (“Specific Applications”), please consult with the ROHM sales

representative in advance. Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way

responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of any

ROHM’s Products for Specific Applications.

(Note1) Medical Equipment Classification of the Specific Applications

JAPAN

USA

EU

CHINA

CLASSⅢ

CLASSⅣ

CLASSⅡb

CLASSⅢ

2. ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor

products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate

safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which

a failure or malfunction of our Products may cause. The following are examples of safety measures:

[a] Installation of protection circuits or other protective devices to improve system safety

[b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure

3. Our Products are not designed under any special or extraordinary environments or conditions, as exemplified below.

Accordingly, ROHM shall not be in any way responsible or liable for any damages, expenses or losses arising from the

use of any ROHM’s Products under any special or extraordinary environments or conditions. If you intend to use our

Products under any special or extraordinary environments or conditions (as exemplified below), your independent

verification and confirmation of product performance, reliability, etc, prior to use, must be necessary:

[a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents

[b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust

[c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2,

H2S, NH3, SO2, and NO2

[d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves

[e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items

[f] Sealing or coating our Products with resin or other coating materials

[g] Use of our Products without cleaning residue of flux (even if you use no-clean type fluxes, cleaning residue of

flux is recommended); or Washing our Products by using water or water-soluble cleaning agents for cleaning

residue after soldering

[h] Use of the Products in places subject to dew condensation

4. The Products are not subject to radiation-proof design.

5. Please verify and confirm characteristics of the final or mounted products in using the Products.

6. In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse. is applied,

confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power

exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect

product performance and reliability.

7. De-rate Power Dissipation depending on ambient temperature. When used in sealed area, confirm that it is the use in

the range that does not exceed the maximum junction temperature.

8. Confirm that operation temperature is within the specified range described in the product specification.

9. ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in

this document.

Precaution for Mounting / Circuit board design

1. When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product

performance and reliability.

2. In principle, the reflow soldering method must be used on a surface-mount products, the flow soldering method must

be used on a through hole mount products. If the flow soldering method is preferred on a surface-mount products,

please consult with the ROHM representative in advance.

For details, please refer to ROHM Mounting specification

Notice-PAA-E

Rev.003

Precautions Regarding Application Examples and External Circuits

1. If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the

characteristics of the Products and external components, including transient characteristics, as well as static

characteristics.

2. You agree that application notes, reference designs, and associated data and information contained in this document

are presented only as guidance for Products use. Therefore, in case you use such information, you are solely

responsible for it and you must exercise your own independent verification and judgment in the use of such information

contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses

incurred by you or third parties arising from the use of such information.

Precaution for Electrostatic

This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper

caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be

applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron,

isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).

Precaution for Storage / Transportation

1. Product performance and soldered connections may deteriorate if the Products are stored in the places where:

[a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2

[b] the temperature or humidity exceeds those recommended by ROHM

[c] the Products are exposed to direct sunshine or condensation

[d] the Products are exposed to high Electrostatic

2. Even under ROHM recommended storage condition, solderability of products out of recommended storage time period

may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is

exceeding the recommended storage time period.

3. Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads

may occur due to excessive stress applied when dropping of a carton.

4. Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of

which storage time is exceeding the recommended storage time period.

Precaution for Product Label

A two-dimensional barcode printed on ROHM Products label is for ROHM’s internal use only.

Precaution for Disposition

When disposing Products please dispose them properly using an authorized industry waste company.

Precaution for Foreign Exchange and Foreign Trade act

Since concerned goods might be fallen under listed items of export control prescribed by Foreign exchange and Foreign

trade act, please consult with ROHM in case of export.

Precaution Regarding Intellectual Property Rights

1. All information and data including but not limited to application example contained in this document is for reference

only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any

other rights of any third party regarding such information or data.

2. ROHM shall not have any obligations where the claims, actions or demands arising from the combination of the

Products with other articles such as components, circuits, systems or external equipment (including software).

3. No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any

third parties with respect to the Products or the information contained in this document. Provided, however, that ROHM

will not assert its intellectual property rights or other rights against you or your customers to the extent necessary to

manufacture or sell products containing the Products, subject to the terms and conditions herein.

Other Precaution

1. This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM.

2. The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written

consent of ROHM.

3. In no event shall you use in any way whatsoever the Products and the related technical information contained in the

Products or this document for any military purposes, including but not limited to, the development of mass-destruction

weapons.

4. The proper names of companies or products described in this document are trademarks or registered trademarks of

ROHM, its affiliated companies or third parties.

Notice-PAA-E

Rev.003


型号：	BD9S111NUX-C
厂家：	ROHM
描述：	BD9S111NUX-C系列是内置低导通电阻的功率MOSFET的同步整流降压型DC/DC转换器。最大可输出1A的电流。具有2.2MHz高速开关频率，适用于小型电感。具有基于电流模式控制的高速瞬态响应性能。内置输出电压设定为1.2V(BD9S110NUX-C) / 1.8V(BD9S111NUX-C)的反馈电阻和相位补偿电路，可以较少的外接零部件构建应用。开关转换器
文件：	总34页 (文件大小：2707K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

BD9S111NUX-C [ROHM]

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