BD9SD11NUX-C [ROHM]
BD9SD11NUX-C是内置低导通电阻的功率MOSFET的同步整流降压型DC/DC转换器。最大可输出600mA的电流。具有2.2MHz高速开关频率,适用于小型电感。具有基于电流模式控制的高速瞬态响应性能。内置输出电压设定为1.15V的反馈电阻和相位补偿电路,可以用较少的外接零部件构建应用。;型号: | BD9SD11NUX-C |
厂家: | ROHM |
描述: | BD9SD11NUX-C是内置低导通电阻的功率MOSFET的同步整流降压型DC/DC转换器。最大可输出600mA的电流。具有2.2MHz高速开关频率,适用于小型电感。具有基于电流模式控制的高速瞬态响应性能。内置输出电压设定为1.15V的反馈电阻和相位补偿电路,可以用较少的外接零部件构建应用。 开关 转换器 |
文件: | 总32页 (文件大小:1654K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Datasheet
2.7 V to 5.5 V Input, 600 mA
Single Synchronous Buck DC/DC Converter
for Automotive
BD9SD11NUX-C
General Description
Key Specifications
BD9SD11NUX-C is a synchronous buck DC/DC
Converter with built-in low On Resistance power
MOSFETs. It is capable of providing current up to 600
mA. Small inductor is applicable due to high switching
frequency of 2.2 MHz. It is a current mode control
DC/DC Converter and features high-speed transient
response. It has an integrated feedback resistor that
sets the output voltage to 1.15 V and a built-in phase
compensation circuit. Applications can be created with
a few external components.
Input Voltage:
2.7 V to 5.5 V
1.15 V (Typ)
600 mA (Max)
2.2 MHz (Typ)
270 mΩ (Typ)
180 mΩ (Typ)
0 μA (Typ)
Output Voltage:
Output Current:
Switching Frequency:
High Side FET ON Resistance:
Low Side FET ON Resistance:
Shutdown Circuit Current:
Operating Temperature:
-40 °C to +125 °C
Package
VSON008X2020
W (Typ) x D (Typ) x H (Max)
2.00 mm x 2.00 mm x 0.60 mm
Features
AEC-Q100 Qualified (Note 1)
Single Synchronous Buck DC/DC Converter
Adjustable Soft Start Function
Power Good Output
Input Under Voltage Lockout Protection (UVLO)
Short Circuit Protection (SCP)
Output Over Voltage Protection (OVP)
Over Current Protection (OCP)
Thermal Shutdown Protection (TSD)
(Note 1) Grade 1
Applications
Automotive Equipment
Other Electronic Equipment
Typical Application Circuit
VIN
VIN
PGD
SW
CIN1
VEN
VOUT
EN
SS
L1
COUT1
GND
VOUT
Figure 1. Application Circuit
〇Product structure : Silicon integrated circuit 〇This product has no designed protection against radioactive rays
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Pin Configuration
SW
SW
1
2
3
4
8
7
6
5
GND
VIN
EXP-PAD
SS
EN
VOUT
PGD
(TOP VIEW)
Pin Descriptions
Pin No.
Pin Name
Function
1, 2
SW
SS
Switch pin. These pins are connected to the drain of the High Side FET and the Low Side FET.
Pin for setting the soft start time. The rise time of the output voltage can be specified by
connecting a capacitor to this pin. See page 18 for how to calculate the capacitance.
3
4
5
VOUT
PGD
VOUT feedback pin. Connect to output voltage sense point.
Power Good pin, an open drain output. It is need to be pulled up to the power supply with a
resistor. See page 12 for setting the resistance.
Enable pin of the device. Turning this pin Low forces the device to enter the shutdown mode.
Turning this pin High makes the device to start up.
6
EN
Power supply pin. Connecting a 10 µF (Typ) ceramic capacitor is recommended. The detail of a
selection is described in page 16.
7
8
-
VIN
GND
Ground pin.
A backside heat dissipation pad. Connecting to the internal PCB ground plane by using via
provides excellent heat dissipation characteristics.
EXP-PAD
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Block Diagram
EN
6
VIN
Slope
7
VREF
SS
3
Soft
Start
Error
PWM
Amplifier
Comparator
R
S
Q
VOUT
4
Driver
Logic
SW
VOUT
1
2
OCP
OSC
UVLO
SCP
VIN
OVP
TSD
GND
Power
Good
8
5
PGD
Figure 2. Block Diagram
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Description of Blocks
1. VREF
The VREF block generates the internal reference voltage.
2. UVLO (Under Voltage Lockout)
The UVLO block is for under voltage lockout protection. It shuts down the device when the VIN falls to 2.45 V (Typ) or lower.
The threshold voltage has a hysteresis of 100 mV (Typ).
3. SCP (Short Circuit Protection)
This is the short circuit protection circuit. After soft start is judged to be completed, if the VOUT pin voltage falls to 70 %
(Typ) of the voltage setting or less and remain in that state for 1 ms (Typ), output MOSFETs turn OFF for 14 ms (Typ) and
then restart the operation.
4. OVP (Over Voltage Protection)
This is the output over voltage protection circuit. When the VOUT pin voltage becomes +15 % (Typ) of the voltage setting
or more, it turns the output MOSFETs OFF. After output voltage falls +10 % (Typ) of the voltage setting or less, the output
MOSFETs returns to normal operation.
5. TSD (Thermal Shutdown)
This is the thermal shutdown circuit. It shuts down the device when the junction temperature (Tj) reaches to 175 °C (Typ)
or more. When the Tj falls below the TSD threshold, the circuits are automatically restored to normal operation with
hysteresis of 25 °C (Typ).
6. OCP (Over Current Protection)
The Over Current Protection function operates by limiting the current that flows through High Side FET at each cycle of
the switching frequency.
7. Soft Start
The Soft Start circuit slows down the rise of output voltage during startup, which allows the prevention of output voltage
overshoot. The soft start time of the output voltage can be specified by connecting a capacitor to the SS pin. See page 18
for how to calculate the capacitance. A built-in soft start function is provided the soft start with Soft Start Time tSS (Refer to
page 6) when the SS pin is open.
8. Error Amplifier
The Error Amplifier block is an error amplifier and its inputs are the reference voltage and the VOUT pin voltage.
9. PWM Comparator
The PWM Comparator block compares the output voltage of the Error Amplifier and the Slope signal to determine the
output switching pulse duty.
10.OSC (Oscillator)
This block generates the oscillating frequency.
11.Driver Logic
This block controls switching operation and various protection functions.
12.Power Good
When the VOUT pin voltage reaches within ±10 % (Typ) of the setting voltage, the built-in Nch MOSFET turns OFF and
the PGD output turns high. There is a 5 % hysteresis on the threshold voltage, so the PGD output turns low when the
VOUT pin voltage reaches outside ±15 % (Typ) of the voltage setting. This function is enabled after soft start is completed.
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Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
Input Voltage
VIN
VEN
-0.3 to +7
-0.3 to VIN
-0.3 to +7
-0.3 to VIN
150
V
V
EN Voltage
PGD Voltage
VPGD
V
VOUT, SS Voltage
Maximum Junction Temperature
Storage Temperature Range
VOUT, VSS
Tjmax
Tstg
V
°C
-55 to +150
°C
Caution 1: Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit
between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is
operated over the absolute maximum ratings.
Caution 2: Should by any chance the maximum junction temperature rating be exceeded the rise in temperature of the chip may result in deterioration of the
properties of the chip. In case of exceeding this absolute maximum rating, design a PCB with thermal resistance taken into consideration by
increasing board size and copper area so as not to exceed the maximum junction temperature rating.
Thermal Resistance (Note 1)
Thermal Resistance (Typ)
Parameter
Symbol
Unit
1s (Note 3)
2s2p (Note 4)
VSON008X2020
Junction to Ambient
Junction to Top Characterization Parameter (Note 2)
θJA
309.5
53
77.1
12
°C/W
°C/W
ΨJT
(Note 1) Based on JESD51-2A (Still-Air).
(Note 2) The thermal characterization parameter to report the difference between junction temperature and the temperature at the top center of the outside
surface of the component package.
(Note 3) Using a PCB board based on JESD51-3.
(Note 4) Using a PCB board based on JESD51-5, 7.
Layer Number of
Measurement Board
Material
FR-4
Board Size
Single
114.3 mm x 76.2 mm x 1.57 mmt
Top
Copper Pattern
Thickness
Footprints and Traces
70 μm
Layer Number of
Measurement Board
Thermal Via (Note 5)
Material
FR-4
Board Size
114.3 mm x 76.2 mm x 1.6 mmt
2 Internal Layers
Pitch
Diameter
4 Layers
1.20 mm
Φ0.30 mm
Top
Copper Pattern
Bottom
Thickness
Copper Pattern
Thickness
Copper Pattern
Thickness
Footprints and Traces
70 μm
74.2 mm x 74.2 mm
35 μm
74.2 mm x 74.2 mm
70 μm
(Note 5) This thermal via connects with the copper pattern of all layers.
Recommended Operating Conditions
Parameter
Symbol
Min
Max
Unit
Input Voltage
VIN
Ta
2.7
-40
-
5.5
+125
600
V
Operating Temperature
Output Current
°C
IOUT
mA
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Electrical Characteristics (Unless otherwise specified Ta = Tj = -40 °C to +125 °C, VIN = 5.0 V, VEN = 5.0 V,
the typical value is defined at Ta = Tj = +25 °C)
Limit
Parameter
Symbol
Unit
Conditions
Min
Typ
Max
VIN
Shutdown Circuit Current
Circuit Current
ISDN
ICC
-
0
10
µA
µA
VEN = 0 V, Ta = 25 °C
IOUT = 0 mA
Non-switching, Ta = 25 °C
250
400
550
UVLO Detection Voltage
UVLO Release Voltage
UVLO Hysteresis Voltage
ENABLE
VUVLO1
VUVLO2
2.30
2.40
50
2.45
2.55
100
2.60
2.70
125
V
V
VIN Falling
VIN Rising
VUVLO-HYS
mV
EN Threshold Voltage High
EN Threshold Voltage Low
EN Input Current
VENH
VENL
IEN
1.0
GND
2.0
-
-
VIN
0.4
8.0
V
V
5.0
µA
VEN = 5.0 V
Output Voltage
VIN = 2.7 V to 5.5 V,
(Note 1)
Output Voltage
VOUT
1.133
1.150
1.167
V
VOUT Input Current 1
VOUT Input Current 2
Soft Start
IOUT1
IOUT2
9.3
14.5
14.5
23.2
18.6
µA
µA
VOUT = 1.15 V
10.4
VOUT = 1.15 V, Ta = 25 °C
VIN = 5.0 V,
The SS Pin OPEN
VIN = 3.3 V,
0.5
1.0
2.0
ms
Soft Start Time
tSS
ISS
fSW
0.6
1.2
2.4
ms
µA
The SS Pin OPEN
SS Charge Current
Switching Frequency
Switching Frequency
Power Good
-1.4
-1.0
-0.6
2.0
2.2
2.4
MHz
VOUT
x 0.80
VOUT
x 0.85
VOUT
x 1.10
VOUT
x 1.05
VOUT
x 0.85
VOUT
x 0.90
VOUT
x 1.15
VOUT
x 1.10
VOUT
x 0.90
VOUT
x 0.95
VOUT
x 1.20
VOUT
x 1.15
2.0
120
0.12
PGD Falling (Fault) Voltage
PGD Rising (Good) Voltage
PGD Rising (Fault) Voltage
PGD Falling (Good) Voltage
VPGDTH_FF
VPGDTH_RG
VPGDTH_RF
VPGDTH_FG
V
V
V
V
VOUT Falling
VOUT Rising
VOUT Rising
VOUT Falling
VPGD = 5.0 V
PGD Output Leakage Current
PGD FET ON Resistance
PGD Output Low Level Voltage
Switch MOSFET
ILEAKPGD
RPGD
-
0
µA
Ω
30
60
VPGDL
0.03
0.06
V
IPGD = 1.0 mA
120
150
80
270
330
180
210
470
550
300
350
mΩ
mΩ
mΩ
mΩ
VIN = 5.0 V
VIN = 3.3 V
VIN = 5.0 V
VIN = 3.3 V
High Side FET ON Resistance
Low Side FET ON Resistance
RONH
RONL
100
VIN = 5.5 V, VSW = 0 V,
Ta = 25 °C
VIN = 5.5 V, VSW = 5.5 V,
Ta = 25 °C
High Side FET Leakage Current
Low Side FET Leakage Current
ILEAKSWH
ILEAKSWL
IOCP
-
-
0
0
5.0
5.0
1.6
μA
μA
A
SW Current of Over Current
Protection (Note 2)
0.8
1.2
SCP, OVP
Short Circuit Protection Detection
Voltage
Output Over Voltage Protection
Detection Voltage
VOUT
x 0.6
VOUT
VOUT
x 0.7
VOUT
VOUT
x 0.8
VOUT
VSCP
VOVP
V
V
VOUT Falling
VOUT Rising
x 1.10
x 1.15
x 1.20
(Note 1) It is tested in a proprietary test mode that connects VOUT to the output of the error amplifier.
(Note 2) This is design value. Not production tested.
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Typical Performance Curves
Unless otherwise specified VIN = VEN
10
550
500
450
400
350
300
250
VEN = 0 V
9
8
7
6
5
4
3
2
VIN = 5.0 V
VIN = 5.0 V
VIN = 3.3 V
1
VIN = 3.3 V
0
-50 -25
0
25
50
75 100 125
-50 -25
0
25
50
75 100 125
Temperature [°C]
Temperature [°C]
Figure 3. Shutdown Circuit Current vs Temperature
Figure 4. Circuit Current vs Temperature
2.40
VIN = 3.3 V
2.35
1.163
1.157
1.151
1.145
1.139
1.133
2.30
2.25
2.20
2.15
VIN = 5.0 V
VIN = 3.3 V
VIN = 5.0 V
2.10
2.05
2.00
-50 -25
0
25
50
75 100 125
-50 -25
0
25
50
75 100 125
Temperature [°C]
Temperature [°C]
Figure 5. Switching Frequency vs Temperature
Figure 6. VOUT Pin Voltage vs Temperature
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Typical Performance Curves – continued
-0.60
-0.70
-0.80
-0.90
-1.00
-1.10
-1.20
-1.30
-1.40
2.0
CSS = OPEN
1.8
1.6
VIN = 3.3 V
VIN = 3.3 V
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
VIN = 5.0 V
VIN = 5.0 V
-50 -25
0
25
50
75 100 125
-50 -25
0
25
50
75 100 125
Temperature [°C]
Temperature [°C]
Figure 7. Soft Start Time vs Temperature
Figure 8. SS Charge Current vs Temperature
550
500
450
400
350
300
250
200
150
100
350
320
290
260
230
200
170
140
110
80
VIN = 3.3 V
VIN = 3.3 V
VIN = 5.0 V
VIN = 5.0 V
-50 -25
0
25
50
75 100 125
-50 -25
0
25
50
75 100 125
Temperature [°C]
Temperature [°C]
Figure 9. High Side FET ON Resistance vs Temperature
Figure 10. Low Side FET ON Resistance vs Temperature
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Typical Performance Curves – continued
5.0
4.0
3.0
2.0
1.0
0.0
5.0
VEN = 0 V
VEN = 0 V
4.0
3.0
2.0
VIN = 5.0 V
VIN = 3.3 V
VIN = 5.0 V
VIN = 3.3 V
1.0
0.0
-50 -25
0
25
50
75 100 125
-50 -25
0
25
50
75 100 125
Temperature [°C]
Temperature [°C]
Figure 11. High Side FET Leakage Current vs Temperature
Figure 12. Low Side FET Leakage Current vs Temperature
120
VIN = 5.0 V
1.34
VIN = 5.0 V
110
1.28
100
90
80
70
60
50
40
30
Rising Fault
1.22
VPGDTH_RF
Falling Good
VPGDTH_FG
1.16
1.10
1.04
0.98
0.92
Rising Good
VPGDTH_RG
Falling Fault
VPGDTH_FF
-50 -25
0
25
50
75 100 125
-50 -25
0
25
50
75 100 125
Temperature [°C]
Temperature [°C]
Figure 13. PGD Threshold Voltage vs Temperature
Figure 14. PGD FET ON Resistance vs Temperature
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Typical Performance Curves – continued
2.70
1.0
0.9
0.8
0.7
0.6
0.5
0.4
VIN = 5.0 V
Threshold High
UVLO Release
VUVLO2
2.65
2.60
2.55
2.50
2.45
2.40
2.35
2.30
VENH
Threshold Low
VENL
UVLO Detection
VUVLO1
-50 -25
0
25
50
75 100 125
-50 -25
0
25
50
75 100 125
Temperature [°C]
Temperature [°C]
Figure 15. UVLO Voltage vs Temperature
Figure 16. EN Threshold Voltage vs Temperature
10
9
8
7
6
5
4
3
2
1
0
1.6
1.5
1.4
1.3
1.2
1.1
1
VIN = 5.0 V
VIN = 5.0 V
VEN = 5.0 V
0.9
VEN = 3.3 V
0.8
-50
-25
0
25
50
75
100 125
-50 -25
0
25
50
75
100 125
Temperature [°C]
Temperature [°C]
Figure 17. EN Input Current vs Temperature
Figure 18. SW Current of Over Current Protection
vs Temperature
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Typical Performance Curves – continued
VIN = 5.0 V
VIN = 5.0 V
Release
1.37
1.35
1.33
1.31
1.29
1.27
0.89
0.85
0.81
0.77
0.73
0.69
Detection
-50 -25
0
25
50
75 100 125
-50 -25
0
25
50
75 100 125
Temperature [°C]
Temperature [°C]
Figure 19. Short Circuit Protection Detection Voltage
vs Temperature
Figure 20. Output Over Voltage Protection Detection Voltage
vs Temperature
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Function Explanations
1.
Enable Control
The device shutdown can be controlled by the voltage applied to the EN pin. When VEN becomes 1.0 V or more, the
internal circuit is activated and the device starts up with soft start. When VEN becomes 0.4 V or less, the device is
shutdown. The PGD output is enabled after soft start is completed.
VIN
0
t
t
t
VEN
VENH
VENL
0
VOUT
VOUT × 0.90
(Typ)
0
tSS
tWAIT
200 µs (Typ)
PGD
0
t
Figure 21. Enable ON/OFF Timing Chart (The SS Pin OPEN)
2.
Power Good Function
When the VOUT pin voltage reaches within ±10 % (Typ) of the voltage setting, the PGD pin open drain MOSFET turns
OFF and the output turns high. There is a 5 % hysteresis on the threshold voltage, so when the VOUT pin voltage
reaches outside ±15 % (Typ) of the voltage setting, the PGD pin open drain MOSFET turns ON and the PGD pin is
pulled down with impedance of 60 Ω (Typ). It is recommended to use a pull-up resistor of 2 kΩ to 100 kΩ for the power
source. This function is enabled after soft start is completed.
+15 % (Typ)
+10 % (Typ)
VOUT
-10 % (Typ)
-15 % (Typ)
PGD
Figure 22. Power Good Timing Chart
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BD9SD11NUX-C
Function Explanations – continued
3.
Pre-bias Function
The device can start up without sinking a large current from output even if it is in the state of pre-biased. For example,
if the device enabled during pre-biased condition, integrated MOSFETs keep OFF until internal SS voltage exceeds
internal FB voltage by more than 40 mV (Typ). After that, the device starts switching and the output voltage increases
with soft start. The PGD output is enabled after soft start is completed.
VEN
Soft Start
VOUT
0 V
40 mV (Typ)
Internal FB
Internal SS
Output MOSFETs OFF
SW
PGD
Figure 23. Pre-bias Start Up Timing Chart
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Protection
1.
Short Circuit Protection (SCP)
The Short Circuit Protection block compares the VOUT pin voltage with the internal reference voltage VREF. When the
VOUT pin voltage has fallen to 70 % (Typ) of the voltage setting or less and remained there for 1 ms (Typ), SCP stops
the operation for 14 ms (Typ) and subsequently initiates a restart. This protection circuit is effective in preventing
damage due to sudden and unexpected incidents. However, the device should not be used in applications
characterized by continuous operation of the protection circuit (e.g. when a load that significantly exceeds the output
current capability of the chip is connected at all times).
Short Circuit
Protection
Short Circuit
Protection Operation
The EN Pin
The VOUT Pin
≤ VOUT x 0.7 (Typ)
ON
OFF
OFF
1.0 V or higher
0.4 V or lower
Enabled
Disabled
≥ VOUT x 0.75 (Typ)
-
1 ms (Typ)
1 ms (Typ)
tSS
VOUT
VSCP : VOUT x 0.7 (Typ)
SCP OFF : VOUT x 0.75 (Typ)
SW
LOW
IOCP
Inductor Current
(Output Load
Current)
Internal
HICCUP
Delay Signal
14 ms (Typ)
SCP Reset
Figure 24. SCP Timing Chart
2.
Over Current Protection (OCP)
The Over Current Protection function operates by limiting the current that flows through High Side FET at each cycle
of the switching frequency. This protection circuit is effective in preventing damage due to sudden and unexpected
incidents. However, the device should not be used in applications characterized by continuous operation of the
protection circuit (e.g. when a load that significantly exceeds the output current capability of the chip is connected at
all times).
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Protection – continued
3.
Under Voltage Lockout Protection (UVLO)
It shuts down the device when the VIN pin falls to 2.45 V (Typ) or lower.
The threshold voltage has a hysteresis of 100 mV (Typ).
VIN (= VEN
)
VUVLO-HYS
100 mV (Typ)
VUVLO2 : 2.55 V (Typ)
VUVLO1 : 2.45 V (Typ)
0 V
tWAIT
200 µs (Typ)
VOUT
tSS
SW
Normal operation
UVLO
Normal operation
Figure 25. UVLO Timing Chart
4.
5.
Thermal Shutdown (TSD)
This is the thermal shutdown circuit that prevents heat damage to the IC. Normal operation should always be within
the IC’s maximum junction temperature rating. However, if the rating is exceeded for a continued period and the junction
temperature (Tj) rises to 175 °C (Typ), the TSD circuit activates and the output MOSFETs turns OFF. When the Tj falls
below the TSD threshold, the circuits are automatically restored to normal operation. Note that the TSD circuit operates
in a situation that exceeds the absolute maximum ratings and therefore, under no circumstances, should the TSD
circuit be used in a set design or for any purpose other than protecting the IC from heat damage.
Over Voltage Protection (OVP)
The device incorporates an over voltage protection circuit to minimize the output voltage overshoot when recovering
from strong load transients or output fault conditions. If the VOUT pin voltage becomes over or equal to +15 % (Typ)
of the voltage setting, which is Output Over Voltage Protection Detection Voltage, the MOSFETs on the output stage is
turned OFF to prevent the increase in the output voltage. After the detection, the switching operation resumes if the
output decreases and the over voltage state is released. Output Over Voltage Protection Detection Voltage and release
voltage have a hysteresis of 5 %.
VOVP : VOUT x 1.15 (Typ)
hys : 5 %
VOUT
SW
Internal OVP
Signal
Figure 26. OVP Timing Chart
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Selection of Components Externally Connected
Contact us if not use the recommended constant in this section.
Necessary parameters in designing the power supply are as follows:
Table 1. Application Specification
Parameter
Input Voltage
Symbol
VIN
Example Value
5.0 V
Output Voltage
VOUT
fSW
COUT
tSS
1.15 V (Typ)
2.2 MHz (Typ)
10 μF
8.0 ms (Typ)
600 mA
Switching Frequency
Output Capacitor
Soft Start Time
Maximum Output Current
IOUTMAX
Application Example
R1
VIN
VIN
PGD
SW
PGD
CIN1
VEN
VOUT
EN
SS
L1
R100
COUT1
GND
VOUT
CSS
Figure 27. Typical Application
1. Switching Frequency
The switching frequency fSW is fixed at 2.2 MHz (Typ) inside the IC.
2. Selection of Input Capacitor
Use ceramic type capacitor for the input capacitor CIN1. CIN1 is used to suppress the input ripple noise and this capacitor
is effective by being placed as close as possible to the VIN pin. Set the capacitor value for CIN1 so that it does not fall to
4.7 μF considering the capacitor value variances, temperature characteristics, DC bias characteristics, aging
characteristics, and etc. Use components which are comparatively same with the components used in “Application
Example” on page 19. Moreover, factors like the PCB layout and the position of the capacitor may lead to IC malfunction.
Refer to “PCB layout Design” on page 21 and 22.
In addition, the capacitor with value 0.1 μF can be added to suppress the high frequency noise as an option.
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BD9SD11NUX-C
Selection of Components Externally Connected – continued
3. Selection of Output LC Filter
In order to supply a continuous current to the load, the DC/DC converter requires an LC filter for smoothing the output
voltage. Use the inductor with value 1.0 μH to 2.2 μH.
VIN
IL
Inductor Saturation Current > IOUTMAX + ∆IL/2
L1
VOUT
∆IL
Driver
Maximum Output Current IOUTMAX
COUT
t
Figure 28. Waveform of Current through Inductor
Figure 29. Output LC Filter Circuit
Inductor ripple current ΔIL can be represented by the following equation.
1
(
)
×
∆퐼퐿 = 푉푂푈푇 × 푉 − 푉푂푈푇
= 268 [mA]
ꢀ푁
ꢁ
ꢂꢃ
×푓 ×퐿
푆푊
ꢄ
where
푉
푉푂푈푇
ꢅ1
is the 5.0 V
is the 1.15 V
is the 1.5 µH
ꢀ푁
ꢆ
ꢇꢈ
is the 2.2 MHz (Switching Frequency)
The rated current of the inductor must be larger than the sum of the maximum output current and 1/2 of the inductor
ripple current ΔIL.
Use ceramic type capacitor for the output capacitor COUT. The capacitance value of COUT is recommended in the range
between 10 μF and 22 μF. COUT affects the output ripple voltage characteristics. COUT must satisfy the required ripple
voltage characteristics.
The output ripple voltage can be represented by the following equation.
1
∆푉
= ∆퐼퐿 × ꢉꢊ퐸ꢇ푅
+
ꢏ [V]
푆푊
푅푃퐿
ꢋ×퐶
×푓
ꢌꢍꢎ
Where
ꢊ퐸ꢇ푅 is the Equivalent Series Resistance (ESR) of the output capacitor
The output ripple voltage ΔVRPL can be represented by the following equation.
1
∆푉
= 0.268 퐴 × ꢉꢐ0 푚훺 + ꢋ×1ꢑ 휇퐹×ꢒ.ꢒ 푀퐻푧ꢏ = 4.20 [mV]
푅푃퐿
where
ꢓ푂푈푇
ꢊ퐸ꢇ푅
is the 10 µF
is the 10 mΩ
Stable transient response and the loop is dependent to COUT. Actually, characteristics vary depending on PCB layout,
arrangement of wiring, kinds of parts used and use conditions (temperature, etc.). Please be sure to check stability and
responsiveness with the actual application.
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BD9SD11NUX-C
4. Selection of Soft Start Capacitor
Turning the EN pin signal high activates the soft start function. This causes the output voltage to rise gradually while the
current at startup is placed under control. This allows the prevention of output voltage overshoot and inrush current. The
rise time tSS_EXT depends on the value of the capacitor connected to the SS pin. The capacitance value should be set in
the range between 4700 pF and 0.082 μF.
(
)
퐶
×ꢑ.ꢋ
푆푆
푡ꢇꢇ_퐸푋푇
=
[s]
VEN
ꢀ
푆푆
VENH
VENL
(
)
×ꢑ.ꢑꢔ
퐶
푆푆
푡푂퐹퐹ꢇ퐸푇
=
[s]
ꢀ
푆푆
0
t
where
VOUT
푡ꢇꢇ_퐸푋푇 is the Soft Start Time
푡푂퐹퐹ꢇ퐸푇 is the Internal Delay Time
ꢓꢇꢇ
퐼ꢇꢇ
is the Capacitor connected to the SS pin
0
t
is the SS Charge Current 1.0 µA (Typ)
tSS_EXT
150 µs (Typ) + tOFFSET
With CSS = 0.01 μF
(
)
ꢑ.ꢑ1 휇퐹×ꢑ.ꢋ
푡ꢇꢇ_퐸푋푇
=
= 8.0 [ms]
Figure 30. Soft Start Timing Chart
1.ꢑ 휇ꢕ
Turning the EN pin High without connecting capacitor to the SS pin and keeping the SS pin either OPEN condition or 10
kΩ to 100 kΩ pull up condition to power source, the output rises in 1 ms (Typ).
Recommended Parts Manufacturer List
Shown below is the list of the recommended parts manufacturers for reference.
Table 2
Type
Ceramic capacitors
Ceramic capacitors
Inductors
Manufacturer
Murata
TDK
URL
www.murata.com
product.tdk.com
www.coilcraft.com
www.cyntec.com
www.murata.com
www.sumida.com
product.tdk.com
Coilcraft
Cyntec
Murata
Sumida
TDK
Inductors
Inductors
Inductors
Inductors
Resistors
ROHM
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BD9SD11NUX-C
Application Example
Table 3. Specification Example
Parameter
Product Name
Symbol
IC
VIN
Example Value
BD9SD11NUX-C
5.0 V, 3.3 V
Supply Voltage
Output Voltage
Soft Start Time
Maximum Output Current
Operation Temperature Range
VOUT
tSS
IOUTMAX
Ta
1.15 V (Typ)
1.0 ms (Typ)
600 mA
-40 °C to +125 °C
R1
VIN
VIN
PGD
SW
PGD
CIN1
VEN
VOUT
EN
SS
L1
R100
COUT1
GND
VOUT
CSS
Figure 31. Reference Circuit
Table 4. Parts List
No
L1
Package
Parameters
1.5 μH
Part Name (Series)
TFM201610ALMA1R5M
GCM21BR70J106K
GCM21BR71A106K
-
Type
Manufacturer
2016
2012
2012
-
Inductor
TDK
Murata
Murata
-
COUT1
10 μF, X7R, 6.3 V
10 μF, X7R, 10 V
SHORT
Ceramic Capacitor
CIN1
R100
R1
Ceramic Capacitor
-
1005
-
100 kΩ, 1 %, 1/16 W
MCR01MZPF1003
-
Chip Resistor
-
ROHM
-
CSS
-
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BD9SD11NUX-C
Characteristic Data (Application Examples)
VIN = VEN, Ta = 25 °C
100
90
80
70
60
80
60
180
135
90
VIN = 5.0 V
40
20
45
VIN = 5.0 V
50
0
0
VIN = 3.3 V
40
30
20
10
0
-20
-40
-60
-80
-45
-90
-135
-180
Gain
Phase
0.0
0.1
0.2
0.3
0.4
0.5
0.6
1
10
100
1000
Output Current [A]
Frequency [kHz]
Figure 32. Efficiency vs Output Current
Figure 33. Frequency Characteristics
(IOUT = 0.6 A)
Time: 20 μs/div
Time: 500 ns/div
VIN = 5.0 V
VIN = 5.0 V
VOUT: 20 mV/div, Offset = 1.15 V
VOUT: 100 mV/div, Offset = 1.15 V
IOUT: 200 mA/div
IOUT: 300 mA/div
Figure 34. Load Transient Response
(IOUT = 0 A ↔ 0.6 A)
Figure 35. Output Ripple Voltage
(IOUT = 0.6 A)
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BD9SD11NUX-C
PCB Layout Design
PCB layout design for DC/DC converter is very important. Appropriate layout can avoid various problems concerning power
supply circuit. Figure 36 to 38 show the current path in a buck DC/DC converter circuit. The Loop 1 in Figure 36 is a current
path when H-side Switch is ON and L-side Switch is OFF, the Loop 2 in Figure 37 is when H-side Switch is OFF and L-side
Switch is ON. The thick line in Figure 38 shows the difference between Loop1 and Loop2. The current in thick line change
sharply each time the switching element H-side and L-side FET change from OFF to ON, and vice versa. These sharp
changes induce a waveform with harmonics in this loop. Therefore, the loop area of thick line that is consisted by input
capacitor and IC should be as small as possible to minimize noise. For more details, refer to application note of switching
regulator series “PCB Layout Techniques of Buck Converter”.
Loop1
VIN
VOUT
L
H-side Switch
CIN
COUT
L-side Switch
GND
GND
Figure 36. Current Path when H-side Switch = ON, L-side Switch = OFF
VIN
VOUT
L
H-side Switch
CIN
COUT
Loop2
L-side Switch
GND
GND
Figure 37. Current Path when H-side Switch = OFF, L-side Switch = ON
VIN
VOUT
L
CIN
COUT
H-side FET
L-side FET
GND
GND
Figure 38. Difference of Current and Critical Area in PCB Layout
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BD9SD11NUX-C
PCB Layout Design – continued
When designing the PCB layout, please pay extra attention to the following points:
• Connect the input capacitor CIN as close as possible to the VIN pin and GND pin on the same plane as the IC.
• Switching nodes such as SW are susceptible to noise due to AC coupling with other nodes. Route the inductor pattern
as thick and as short as possible.
• Feedback line connected to VOUT pin far from the SW nodes.
• R100 is provided for the measurement of feedback frequency characteristics (optional). By inserting a resistor into R100, it
is possible to measure the frequency characteristics of feedback (phase margin) using FRA etc. R100 is short-circuited
for normal use.
CSS
IC
L1
CIN
COUT
Example of Evaluation Board Layout (Top View)
Example of Evaluation Board Layout (Bottom View)
Figure 39. Example of Evaluation Board Layout
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BD9SD11NUX-C
Power Dissipation
For thermal design, be sure to operate the IC within the following conditions.
(Since the temperatures described hereunder are all guaranteed temperatures, take margin into account.)
1. The ambient temperature Ta is to be 125 °C or less.
2. The chip junction temperature Tj is to be 150 °C or less.
The chip junction temperature Tj can be considered in the following two patterns:
1. To obtain Tj from the package surface center temperature Tt in actual use
ꢖ푗 = ꢖ푡 + 휓퐽푇 × ꢗ [°C]
2. To obtain Tj from the ambient temperature Ta
ꢖ푗 = ꢖ푎 + 휃퐽ꢕ × ꢗ [°C]
Where:
휓퐽푇
휃퐽ꢕ
is junction to top characterization parameter (Refer to page 5)
is junction to ambient (Refer to page 5)
The heat loss W of the IC can be obtained by the formula shown below:
푉푂푈푇
푉푂푈푇
ꢒ
ꢗ = ꢊ푂푁퐻 × 퐼푂푈푇
×
+ ꢊ푂푁퐿 × 퐼푂푈푇ꢒ ꢘꢐ −
ꢙ
푉
푉
ꢀ푁
ꢀ푁
1
(
)
+푉 × 퐼퐶퐶 + × 푡푟 + 푡ꢆ × 푉 × 퐼푂푈푇 × ꢆ
[W]
ꢀ푁
ꢀ푁
ꢇꢈ
ꢒ
Where:
ꢊ푂푁퐻
is the High Side FET ON Resistance (Refer to page 6) [Ω]
is the Low Side FET ON Resistance (Refer to page 6) [Ω]
is the Output Current [A]
ꢊ푂푁퐿
퐼푂푈푇
푉푂푈푇
is the Output Voltage [V]
푉
퐼퐶퐶
푡푟
푡ꢆ
ꢆ
ꢇꢈ
is the Input Voltage [V]
ꢀ푁
is the Circuit Current (Refer to page 6) [A]
is the Switching Rise Time [s] (Typ:4 ns)
is the Switching Fall Time [s] (Typ:3 ns)
is the Switching Frequency (Refer to page 6) [Hz]
tr
(4 ns)
tf
(3 ns)
VIN
ꢒ
1. ꢊ푂푁퐻 × 퐼푂푈푇
1
ꢒ
2. ꢊ푂푁퐿 × 퐼푂푈푇
VSW
3. 1 × (푡푟 + 푡ꢆ) × 푉 × 퐼푂푈푇 × ꢆ
ꢀ푁
ꢇꢈ
ꢒ
GND
3
2
1
fsw
Figure 40. SW Waveform
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BD9SD11NUX-C
I/O Equivalence Circuits (Note 1)
1. 2. SW
3. SS
VIN
VIN
40 kΩ
SW
SS
GND
100 kΩ
GND
GND
GND
4. VOUT
5. PGD
20 kΩ
VOUT
PGD
10 kΩ
10 kΩ
10 kΩ
25.6 kΩ
58.4 kΩ
50 Ω
GND
GND
GND
GND
6. EN
100 kΩ
EN
GND
10 kΩ
150 kΩ
850 kΩ
GND GND
GND
(Note 1) Resistance value is Typical.
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BD9SD11NUX-C
Operational Notes
1. Reverse Connection of Power Supply
Connecting the power supply in reverse polarity can damage the IC. Take precautions against reverse polarity when
connecting the power supply, such as mounting an external diode between the power supply and the IC’s power supply
pins.
2. Power Supply Lines
Design the PCB layout pattern to provide low impedance supply lines. Furthermore, connect a capacitor to ground at
all power supply pins. Consider the effect of temperature and aging on the capacitance value when using electrolytic
capacitors.
3. Ground Voltage
Ensure that no pins are at a voltage below that of the ground pin at any time, even during transient condition. However,
pins that drive inductive loads (e.g. motor driver outputs, DC-DC converter outputs) may inevitably go below ground
due to back EMF or electromotive force. In such cases, the user should make sure that such voltages going below
ground will not cause the IC and the system to malfunction by examining carefully all relevant factors and conditions
such as motor characteristics, supply voltage, operating frequency and PCB wiring to name a few.
4. Ground Wiring Pattern
When using both small-signal and large-current ground traces, the two ground traces should be routed separately but
connected to a single ground at the reference point of the application board to avoid fluctuations in the small-signal
ground caused by large currents. Also ensure that the ground traces of external components do not cause variations
on the ground voltage. The ground lines must be as short and thick as possible to reduce line impedance.
5. Recommended Operating Conditions
The function and operation of the IC are guaranteed within the range specified by the recommended operating
conditions. The characteristic values are guaranteed only under the conditions of each item specified by the electrical
characteristics.
6. Inrush Current
When power is first supplied to the IC, it is possible that the internal logic may be unstable and inrush current may flow
instantaneously due to the internal powering sequence and delays, especially if the IC has more than one power supply.
Therefore, give special consideration to power coupling capacitance, power wiring, width of ground wiring, and routing
of connections.
7. Testing on Application Boards
When testing the IC on an application board, connecting a capacitor directly to a low-impedance output pin may subject
the IC to stress. Always discharge capacitors completely after each process or step. The IC’s power supply should
always be turned off completely before connecting or removing it from the test setup during the inspection process. To
prevent damage from static discharge, ground the IC during assembly and use similar precautions during transport and
storage.
8. Inter-pin Short and Mounting Errors
Ensure that the direction and position are correct when mounting the IC on the PCB. Incorrect mounting may result in
damaging the IC. Avoid nearby pins being shorted to each other especially to ground, power supply and output pin.
Inter-pin shorts could be due to many reasons such as metal particles, water droplets (in very humid environment) and
unintentional solder bridge deposited in between pins during assembly to name a few.
9. Unused Input Pins
Input pins of an IC are often connected to the gate of a MOS transistor. The gate has extremely high impedance and
extremely low capacitance. If left unconnected, the electric field from the outside can easily charge it. The small charge
acquired in this way is enough to produce a significant effect on the conduction through the transistor and cause
unexpected operation of the IC. So unless otherwise specified, unused input pins should be connected to the power
supply or ground line.
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BD9SD11NUX-C
Operational Notes – continued
10. Regarding the Input Pin of the IC
This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them
isolated. P-N junctions are formed at the intersection of the P layers with the N layers of other elements, creating a
parasitic diode or transistor. For example (refer to figure below):
When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.
When GND > Pin B, the P-N junction operates as a parasitic transistor.
Parasitic diodes inevitably occur in the structure of the IC. The operation of parasitic diodes can result in mutual
interference among circuits, operational faults, or physical damage. Therefore, conditions that cause these diodes to
operate, such as applying a voltage lower than the GND voltage to an input pin (and thus to the P substrate) should be
avoided.
Resistor
Transistor (NPN)
Pin A
Pin B
Pin B
B
E
C
Pin A
B
C
E
P
P+
P+
N
P+
P
P+
N
N
N
N
N
N
N
Parasitic
Elements
Parasitic
Elements
P Substrate
GND GND
P Substrate
GND
GND
Parasitic
Elements
Parasitic
Elements
N Region
close-by
Figure 41. Example of Monolithic IC Structure
11. Ceramic Capacitor
When using a ceramic capacitor, determine a capacitance value considering the change of capacitance with
temperature and the decrease in nominal capacitance due to DC bias and others.
12. Thermal Shutdown Circuit (TSD)
This IC has a built-in thermal shutdown circuit that prevents heat damage to the IC. Normal operation should always
be within the IC’s maximum junction temperature rating. If however the rating is exceeded for a continued period, the
junction temperature (Tj) will rise which will activate the TSD circuit that will turn OFF power output pins. When the Tj
falls below the TSD threshold, the circuits are automatically restored to normal operation.
Note that the TSD circuit operates in a situation that exceeds the absolute maximum ratings and therefore, under no
circumstances, should the TSD circuit be used in a set design or for any purpose other than protecting the IC from heat
damage.
13. Over Current Protection Circuit (OCP)
This IC incorporates an integrated overcurrent protection circuit that is activated when the load is shorted. This
protection circuit is effective in preventing damage due to sudden and unexpected incidents. However, the IC should
not be used in applications characterized by continuous operation or transitioning of the protection circuit.
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BD9SD11NUX-C
Ordering Information
B D 9 S D 1 1 N U X -
C E 2
Part Number
Package
VSON008X2020
Product class
C for Automotive applications
Packaging and forming specification
E2: Embossed tape and reel
Marking Diagram
VSON008X2020 (TOP VIEW)
Part Number Marking
LOT Number
D 9 S
D 1 1
Pin 1 Mark
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BD9SD11NUX-C
Physical Dimension and Packing Information
Package Name
VSON008X2020
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BD9SD11NUX-C
Revision History
Date
Revision
001
Changes
25.Feb.2020
New Release
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Notice
Precaution on using ROHM Products
(Note 1)
1. If you intend to use our Products in devices requiring extremely high reliability (such as medical equipment
,
aircraft/spacecraft, nuclear power controllers, etc.) and whose malfunction or failure may cause loss of human life,
bodily injury or serious damage to property (“Specific Applications”), please consult with the ROHM sales
representative in advance. Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way
responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of any
ROHM’s Products for Specific Applications.
(Note1) Medical Equipment Classification of the Specific Applications
JAPAN
USA
EU
CHINA
CLASSⅢ
CLASSⅣ
CLASSⅡb
CLASSⅢ
CLASSⅢ
CLASSⅢ
2. ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor
products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate
safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which
a failure or malfunction of our Products may cause. The following are examples of safety measures:
[a] Installation of protection circuits or other protective devices to improve system safety
[b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure
3. Our Products are not designed under any special or extraordinary environments or conditions, as exemplified below.
Accordingly, ROHM shall not be in any way responsible or liable for any damages, expenses or losses arising from the
use of any ROHM’s Products under any special or extraordinary environments or conditions. If you intend to use our
Products under any special or extraordinary environments or conditions (as exemplified below), your independent
verification and confirmation of product performance, reliability, etc, prior to use, must be necessary:
[a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents
[b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust
[c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2,
H2S, NH3, SO2, and NO2
[d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves
[e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items
[f] Sealing or coating our Products with resin or other coating materials
[g] Use of our Products without cleaning residue of flux (Exclude cases where no-clean type fluxes is used.
However, recommend sufficiently about the residue.); or Washing our Products by using water or water-soluble
cleaning agents for cleaning residue after soldering
[h] Use of the Products in places subject to dew condensation
4. The Products are not subject to radiation-proof design.
5. Please verify and confirm characteristics of the final or mounted products in using the Products.
6. In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse, is applied,
confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power
exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect
product performance and reliability.
7. De-rate Power Dissipation depending on ambient temperature. When used in sealed area, confirm that it is the use in
the range that does not exceed the maximum junction temperature.
8. Confirm that operation temperature is within the specified range described in the product specification.
9. ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in
this document.
Precaution for Mounting / Circuit board design
1. When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product
performance and reliability.
2. In principle, the reflow soldering method must be used on a surface-mount products, the flow soldering method must
be used on a through hole mount products. If the flow soldering method is preferred on a surface-mount products,
please consult with the ROHM representative in advance.
For details, please refer to ROHM Mounting specification
Notice-PAA-E
Rev.004
© 2015 ROHM Co., Ltd. All rights reserved.
Precautions Regarding Application Examples and External Circuits
1. If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the
characteristics of the Products and external components, including transient characteristics, as well as static
characteristics.
2. You agree that application notes, reference designs, and associated data and information contained in this document
are presented only as guidance for Products use. Therefore, in case you use such information, you are solely
responsible for it and you must exercise your own independent verification and judgment in the use of such information
contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses
incurred by you or third parties arising from the use of such information.
Precaution for Electrostatic
This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper
caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be
applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron,
isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).
Precaution for Storage / Transportation
1. Product performance and soldered connections may deteriorate if the Products are stored in the places where:
[a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2
[b] the temperature or humidity exceeds those recommended by ROHM
[c] the Products are exposed to direct sunshine or condensation
[d] the Products are exposed to high Electrostatic
2. Even under ROHM recommended storage condition, solderability of products out of recommended storage time period
may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is
exceeding the recommended storage time period.
3. Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads
may occur due to excessive stress applied when dropping of a carton.
4. Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of
which storage time is exceeding the recommended storage time period.
Precaution for Product Label
A two-dimensional barcode printed on ROHM Products label is for ROHM’s internal use only.
Precaution for Disposition
When disposing Products please dispose them properly using an authorized industry waste company.
Precaution for Foreign Exchange and Foreign Trade act
Since concerned goods might be fallen under listed items of export control prescribed by Foreign exchange and Foreign
trade act, please consult with ROHM in case of export.
Precaution Regarding Intellectual Property Rights
1. All information and data including but not limited to application example contained in this document is for reference
only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any
other rights of any third party regarding such information or data.
2. ROHM shall not have any obligations where the claims, actions or demands arising from the combination of the
Products with other articles such as components, circuits, systems or external equipment (including software).
3. No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any
third parties with respect to the Products or the information contained in this document. Provided, however, that ROHM
will not assert its intellectual property rights or other rights against you or your customers to the extent necessary to
manufacture or sell products containing the Products, subject to the terms and conditions herein.
Other Precaution
1. This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM.
2. The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written
consent of ROHM.
3. In no event shall you use in any way whatsoever the Products and the related technical information contained in the
Products or this document for any military purposes, including but not limited to, the development of mass-destruction
weapons.
4. The proper names of companies or products described in this document are trademarks or registered trademarks of
ROHM, its affiliated companies or third parties.
Notice-PAA-E
Rev.004
© 2015 ROHM Co., Ltd. All rights reserved.
Daattaasshheeeett
General Precaution
1. Before you use our Products, you are requested to carefully read this document and fully understand its contents.
ROHM shall not be in any way responsible or liable for failure, malfunction or accident arising from the use of any
ROHM’s Products against warning, caution or note contained in this document.
2. All information contained in this document is current as of the issuing date and subject to change without any prior
notice. Before purchasing or using ROHM’s Products, please confirm the latest information with a ROHM sales
representative.
3. The information contained in this document is provided on an “as is” basis and ROHM does not warrant that all
information contained in this document is accurate and/or error-free. ROHM shall not be in any way responsible or
liable for any damages, expenses or losses incurred by you or third parties resulting from inaccuracy or errors of or
concerning such information.
Notice – WE
Rev.001
© 2015 ROHM Co., Ltd. All rights reserved.
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