BH33NB1WHFWHFV [ROHM]
1ch 150mA CMOS LDO Regulators; 1路150毫安CMOS LDO稳压器
| 型号： | BH33NB1WHFWHFV |
| 厂家： | 
ROHM |
| 描述： | 1ch 150mA CMOS LDO Regulators |
| 文件： | 总9页 (文件大小：294K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CMOS LDO Regulators for Portable Equipments
1ch 150mA
CMOS LDO Regulators
BH□□NB1WHFV series
No.11020EBT04
●Description
The BH□□NB1WHFV series is a line of 150 mA output, high-performance CMOS regulators that deliver a high ripple
rejection ratio of 80 dB (Typ., 1 kHz). They are ideal for use in high-performance, analog applications and offer improved line
regulation, load regulation, and noise characteristics. Using the ultra-small HVSOF5 package, which features a built-in heat
sink, contributes to space-saving application designs.
●Features
1) High accuracy output voltage: ± 1%
2) High ripple rejection ratio: 80 dB (Typ., 1 kHz)
3) Stable with ceramic capacitors
4) Low bias current: 60 µA
5) Output voltage on/off control
6) Built-in overcurrent and thermal shutdown circuits
7) Ultra-small HVSOF5 power package
●Applications
Battery-driven portable devices, etc.
●Product line
150 mA BH□□NB1WHFV Series
Product name
2.5
2.8
2.85
2.9
3.0
3.1
3.3
Package
HVSOF5
BH□□NB1WHFV
√
√
√
√
√
√
√
Model name: BH□□NB1W□
a
b
Symbol
Description
Output voltage specification
□□
25
Output voltage (V)
2.5 V (Typ.)
□□
30
Output voltage (V)
3.0 V (Typ.)
a
b
28
2.8 V (Typ.)
31
3.1 V (Typ.)
2J
2.85 V (Typ.)
2.9 V (Typ.)
33
3.3 V (Typ.)
29
Package HFV: HVSOF5
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© 2011 ROHM Co., Ltd. All rights reserved.
2011.01 - Rev.B
1/8
Technical Note
BH□□NB1WHFV series
●Absolute maximum ratings
Parameter
Symbol
Ratings
Unit
Applied power supply voltage
Power dissipation
VMAX
Pd
−0.3 to +6.0
410 *1
V
mW
°C
Operating temperature range
Topr
−40 to +85
Storage temperature range
Tstg
−55 to +125
°C
*1: Reduce by 4.1 mW/C over 25C, when mounted on a glass epoxy PCB (70 mm 70 mm 1.6 mm).
●Recommended operating ranges (not to exceed Pd)
Parameter
Symbol
Ratings
Unit
Power supply voltage
Output current
VIN
2.5 to 5.5
0 to 150
V
IOUT
mA
●Recommended operating conditions
Parameter Symbol
Input capacitor
Output capacitor
Ratings
Typ.
Unit
Conditions
Min.
Max.
—
The use of ceramic
capacitors is recommended.
CIN
CO
0.1 *2
—
µF
µF
The use of ceramic
capacitors is recommended.
2.2 *2
—
—
*2 Make sure that the output capacitor value is not kept lower than this specified level across a variety of temperature, DC bias characteristic.
And also make sure that the capacitor value cannot change as time progresses.
●Electrical characteristics
(Unless otherwise specified, Ta = 25°C, VIN = VOUT + 1.0 V, STBY = 1.5 V, CIN = 0.1 µF, CO = 2.2 µF)
Limits
Parameter
Output voltage
Symbol
Unit
Conditions
IOUT = 1 mA
Min.
Typ.
Max.
VOUT
IGND
ISTBY
VOUT0.99
VOUT
VOUT1.01
V
IOUT = 50 mA
STBY = 0 V
Circuit current
—
—
60
—
100
1.0
µA
µA
Circuit current (STBY)
VRR = −20 dBv, fRR = 1 kz,
IOUT = 10 mA
Ripple rejection ratio
RR
—
80
—
dB
IOUT = 1 mA to 30 mA
IOUT = 30 mA to 1 mA
Load response 1
Load response 2
LTV1
LTV2
—
—
25
25
—
—
mV
mV
VIN = 0.98 VOUT,
Dropout voltage 1
Dropout voltage 2
Line regulation
VSAT1
VSAT2
VDL1
—
—
—
80
250
1
150
450
20
mV
mV
mV
IOUT = 30 mA
VIN = 0.98 VOUT,
IOUT = 100 mA
VIN = VOUT + 0.5 V to 5.5 V,
IOUT = 50 mA
IOUT = 1 mA to 100 mA
IOUT = 1 mA to 150 mA
VO = VOUT 0.98
VO = 0 V
Load regulation 1
Load regulation 2
VDLO1
VDLO2
ILMAX
ISHORT
RSTB
—
—
6
30
90
mV
mV
mA
mA
kΩ
9
Overcurrent protection
limit current
—
250
50
550
—
Short current
—
—
STBY pull-down resistance
275
1100
ON
OFF
VSTBH
VSTBL
1.5
—
—
VIN
0.3
V
V
STBY control voltage
−0.3
* This IC is not designed to be radiation-resistant.
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© 2011 ROHM Co., Ltd. All rights reserved.
2011.01 - Rev.B
2/8
Technical Note
BH□□NB1WHFV series
●Reference data
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
1
2
3
4
5
0
1
2
3
4
5
0
1
2
3
4
5
Input Voltage VIN[V]
Input Voltage VIN[V]
Input Voltage VIN[V]
Fig.2 Output Voltage vs Input Voltage
(BH30NB1WHFV)
Fig.3 Output Voltage vs Input Voltage
(BH33NB1WHFV)
Fig.1 Output Voltage vs Input Voltage
(BH25NB1WHFV)
80
70
60
50
40
30
20
10
0
80
70
60
50
40
30
20
10
0
80
70
60
50
40
30
20
10
0
0
1
2
3
4
5
0
1
2
3
4
5
0
1
2
3
4
5
Input Voltage VIN[V]
Input Voltage VIN[V]
Input Voltage VIN[V]
Fig.6 GND Current vs Input Voltage
(BH33NB1WHFV)
Fig.4 GND Current vs Input Voltage
(BH25NB1WHFV)
Fig.5 GND Current vs Input Voltage
(BH30NB1WHFV)
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
50
100 150 200 250 300
0
50
100 150 200 250 300
0
50
100 150 200 250
300
Output Current IOUT[mA]
Output Current IOUT [mA]
Output Current IOUT [mA]
Fig.9 Output Voltage vs Output Current
(BH33NB1WHFV)
Fig.8 Output Voltage vs Output Current
(BH30NB1WHFV)
Fig.7 Output Voltage vs Output Current
(BH25NB1WHFV)
0. 5
0. 4
0. 3
0. 2
0. 1
0. 0
0.5
0.4
0.3
0.2
0.1
0.0
0.5
0.4
0.3
0.2
0.1
0.0
0
50
100
150
0
50
100
150
0
50
100
150
Output Current IOUT[mA]
Output Current IOUT[mA]
Output Current IOUT[mA]
Fig.12 Dropout voltage vs Output Current
(BH33NB1WHFV)
Fig.10 Dropout voltage vs Output Current Fig.11 Dropout voltage vs Output Current
(BH25NB1WHFV) (BH30NB1WHFV)
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© 2011 ROHM Co., Ltd. All rights reserved.
2011.01 - Rev.B
3/8
Technical Note
BH□□NB1WHFV series
2.60
2.55
2.50
3.40
3.35
3.30
3.25
3.20
3.10
3.05
3.00
2.95
2.90
2.45
IOUT=1mA
IOUT=1mA
IOUT=1mA
2.40
-50
-25
0
25
Temp[
50
75
100
-50
-25
0
25
Temp[ ]
℃
50
75
100
-50
-25
0
25
Temp[
50
75
100
]
℃
]
℃
Fig.14 Output Voltage vs Temperature
(BH30NB1WHFV)
Fig.15 Output Voltage vs Temperature
(BH33NB1WHFV)
Fig.13 Output Voltage vs Temperature
(BH25NB1WHFV)
90
80
70
60
50
40
90
80
70
60
50
40
90
80
70
60
50
40
30
30
30
Co=2.2μF
Io=10mA
Co=2.2μF
Io=10mA
Co=2.2μF
Io=10mA
20
20
20
10
10
10
100
1 k
10 k
100
1 M
100
1 k
10 k
100
1 M
100
1 k
10 k
100
1 M
Frequency f[Hz]
Frequency f[Hz]
Frequency f[Hz]
Fig.17 Ripple Rejection
Fig.18 Ripple Rejection
Fig.16 Ripple Rejection
(BH25NB1WHFV)
(BH30NB1WHFV)
(BH33NB1WHFV)
IOUT = 1 mA → 30 mA
IOUT = 1 mA → 30 mA
IOUT = 1 mA → 30 mA
VOUT
50 mV / div
100 µs / div
VOUT
VOUT
50 mV / div
100 µs / div
50 mV / div
100 µs / div
Fig.19 Load Response
(Co = 2.2 µF)
Fig.20 Load Response
(Co = 2.2 µF)
Fig.21 Load Response
(Co = 2.2 µF)
(BH25NB1WHFV)
(BH30NB1WHFV)
(BH33NB1WHFV)
1 V / div
1 V / div
1 V / div
STBY
STBY
STBY
1 V / div
1 V / div
1 V / div
Co = 1 µF
VOUT
Co = 1 µF
Co = 1 µF
Co = 10 µF
Co = 10 µF
Co = 10 µF
VOUT
VOUT
Co = 2.2 µF
Co = 2.2 µF
100 µs / div
Co = 2.2 µF
100 µs / div
100 µs / div
Fig.23 Output Voltage Rise Time
(BH30NB1WHFV)
Fig.24 Output Voltage Rise Time
(BH33NB1WHFV)
Fig.22 Output Voltage Rise Time
(BH25NB1WHFV)
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2011.01 - Rev.B
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© 2011 ROHM Co., Ltd. All rights reserved.
Technical Note
BH□□NB1WHFV series
●Block diagram, recommended circuit diagram, and pin assignment diagram
BH□□NB1WHFV
Pin
No.
VIN
VIN
Symbol
STBY
Function
3
VOLTAGE
REFERENCE
Output voltage on/off control
(High: ON, Low: OFF)
1
Cin
VOUT
Co
VOUT
N.C.
4
5
THERMAL
PROTECTION
2
3
4
5
GND
VIN
VOUT
N.C.
Ground
2
1
GND
Power supply input
Voltage output
NO CONNECT
OVER CURRENT
PROTECTION
VSTB
CONTROL
BLOCK
STBY
Cin 0.1µF
Co 2.2µF
Fig.25
●Power dissipation (Pd)
1. Power dissipation (Pd)
Power dissipation calculations include estimates of power dissipation characteristics and internal IC power consumption,
and should be treated as guidelines. In the event that the IC is used in an environment where this power dissipation is
exceeded, the attendant rise in the junction temperature will trigger the thermal shutdown circuit, reducing the current
capacity and otherwise degrading the IC's design performance. Allow for sufficient margins so that this power dissipation is
not exceeded during IC operation.
Calculating the maximum internal IC power consumption (PMAX)
PMAX = (VIN − VOUT) IOUT (MAX.)
VIN : Input voltage
VOUT : Output voltage
IOUT (MAX): Max. output current
2. Power dissipation/power dissipation reduction (Pd)
HVSOF5
0.6
Board: 70 mm 70 mm 1.6 mm
Material: Glass epoxy PCB
0.4
0.2
0
410 mW
0
25
50
Ta[℃]
75
100
125
Fig. 26 HVSOF5 Power Dissipation/Power Dissipation Reduction (Example)
*Circuit design should allow a sufficient margin for the temperature range so that PMAX < Pd.
●Input Output capacitors
It is recommended to insert bypass capacitors between input and GND pins, positioning them as close to the pins as
possible. These capacitors will be used when the power supply impedance increases or when long wiring paths are used, so
they should be checked once the IC has been mounted.
Ceramic capacitors generally have temperature and DC bias characteristics. When selecting ceramic capacitors, use X5R or
X7R, or better models that offer good temperature and DC bias characteristics and high tolerant voltages.
Typical ceramic capacitor characteristics
120
100
80
60
40
20
0
100
95
120
50 V tolerance
50 V
tolerance
100
80
60
40
20
0
X7R
X5R
90
85
80
75
70
Y5V
10 V
tolerance
10 V
tolerance
16 V tolerance
16 V tolerance
0
1
2
3
4
0
1
2
3
4
-25
0
25
Temp[
50
75
DC bias Vdc[V]
DC bias Vdc[V]
]
℃
Fig.29 Capacitance vs Temperature
(X5R, X7R, Y5V)
Fig.27 Capacitance vs Bias
(Y5V)
Fig.28 Capacitance vs Bias
(X5R, X7R)
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2011.01 - Rev.B
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Technical Note
BH□□NB1WHFV series
●Output capacitors
Mounting input capacitor between input pin and GND(as close to pin as possible), and also output capacitor between output
pin and GND(as close to pin as possible) is recommended. The input capacitor reduces the output impedance of the voltage
supply source connected to the VCC. The higher value the output capacitor goes, the more stable the whole operation
becomes. This leads to high load transient response. Please confirm the whole operation on actual application board.
Generally, ceramic capacitor has wide range of tolerance, temperature coefficient, and DC bias characteristic. And also its
value goes lower as time progresses. Please choose ceramic capacitors after obtaining more detailed data by asking
capacitor makers.
BH□□NB1WHFV
100
COUT = 2.2 µF
Ta = +25°C
10
1
Stable region
0.1
0.01
0
50
100
150
Output Current IOUT [mA]
Fig.30 Stable Operation Region (Example)
●Operation Notes
1. Absolute maximum ratings
An excess in the absolute maximum ratings, such as supply voltage, temperature range of operating conditions, etc.,
can break down the devices, thus making impossible to identify breaking mode, such as a short circuit or an open circuit.
If any over rated values will expect to exceed the absolute maximum ratings, consider adding circuit protection devices,
such as fuses.
2. Thermal design
Use a thermal design that allows for a sufficient margin in light of the power dissipation (Pd) in actual operating
conditions.
3. Inter-pin shorts and mounting errors
Use caution when positioning the IC for mounting on printed circuit boards. The IC may be damaged if there is any
connection error or if pins are shorted together.
4. Thermal shutdown circuit (TSD)
The IC incorporates a built-in thermal shutdown circuit (TSD circuit). The thermal shutdown circuit is designed only to
shut the IC off to prevent runaway thermal operation. It is not designed to protect the IC or guarantee its operation. Do
not continue to use the IC after operating this circuit or use the IC in an environment where the operation of this circuit is
assumed.
5. Overcurrent protection circuit
The IC incorporates a built-in overcurrent protection circuit that operates according to the output current capacity. This
circuit serves to protect the IC from damage when the load is shorted. The protection circuit is designed to limit current
flow by not latching in the event of a large and instantaneous current flow originating from a large capacitor or other
component. These protection circuits are effective in preventing damage due to sudden and unexpected accidents.
However, the IC should not be used in applications characterized by the continuous operation or transitioning of the
protection circuits. At the time of thermal designing, keep in mind that the current capability has negative characteristics
to temperatures.
6. Action in strong electromagnetic field
Use caution when using the IC in the presence of a strong electromagnetic field as doing so may cause the IC to
malfunction.
7. Ground wiring pattern
When using both small signal and large current GND patterns, it is recommended to isolate the two ground patterns,
placing a single ground point at the ground potential of application so that the pattern wiring resistance and voltage
variations caused by large currents do not cause variations in the small signal ground voltage. Be careful not to change
the GND wiring pattern of any external components, either.
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Technical Note
BH□□NB1WHFV series
8. GND voltage
The potential of GND pin must be minimum potential in all operating conditions.
9. Back Current
In applications where the IC may be exposed to back current flow, it is recommended to create a path to dissipate this
current by inserting a bypass diode between the VIN and VOUT pins.
Back current
VIN
OUT
STBY
GND
Fig. 31 Example Bypass Diode Connection
10. Testing on application boards
When testing the IC on an application board, connecting a capacitor to a pin with low impedance subjects the IC to
stress. Always discharge capacitors after each process or step. Always turn the IC's power supply off before connecting
it to or removing it from a jig or fixture during the inspection process. Ground the IC during assembly steps as an
antistatic measure. Use similar precaution when transporting or storing the IC.
11. Regarding input pin of the IC
This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them
isolated. P-N junctions are formed at the intersection of these P layers with the N layers of other elements, creating a
parasitic diode or transistor. For example, the relation between each potential is as follows:
When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.
When GND > Pin B, the P-N junction operates as a parasitic transistor.
Parasitic diodes can occur inevitable in the structure of the IC. The operation of parasitic diodes can result in mutual
interference among circuits, operational faults, or physical damage. Accordingly, methods by which parasitic diodes
operate, such as applying a voltage that is lower than the GND (P substrate) voltage to an input pin, should not be used.
Resistor
Transistor (NPN)
B
Pin A
Pin B
Pin B
C
E
Pin A
B
C
E
N
N
N
P+
P+
P+
P+
N
P
P
Parasitic
element
N
N
Parasitic
element
P substrate
P substrate
GND
GND
GND
GND
Parasitic element
Parasitic element
Other adjacent elements
Fig.32 Example of IC structure
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© 2011 ROHM Co., Ltd. All rights reserved.
2011.01 - Rev.B
7/8
Technical Note
BH□□NB1WHFV series
●Ordering part number
B H
2 5
N B 1
W
H F V - T R
Part No.
Output voltage Series
Shutdown
switch
W : Includes
switch
Package
HFV : HVSOF5
Packaging and forming specification
TR: Embossed tape and reel
25:2.5 V
28:2.8 V
2J:2.85 V
29:2.9 V
30:3.0 V
31:3.1 V
33:3.3 V
NB1 : High ripple
rejection
HVSOF5
<Tape and Reel information>
1.6 0.05
(0.8)
(0.3)
Tape
Embossed carrier tape
3000pcs
Quantity
1.0 0.05
TR
Direction
of feed
5
1
4
3
4
5
The direction is the 1pin of product is at the upper right when you hold
reel on the left hand and you pull out the tape on the right hand
(
)
3
2 1
2
1pin
0.13 0.05
S
0.1
0.22 0.05
S
0.5
M
Direction of feed
Order quantity needs to be multiple of the minimum quantity.
0.08
Reel
(Unit : mm)
∗
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2011.01 - Rev.B
8/8
© 2011 ROHM Co., Ltd. All rights reserved.
Notice
N o t e s
No copying or reproduction of this document, in part or in whole, is permitted without the
consent of ROHM Co.,Ltd.
The content specified herein is subject to change for improvement without notice.
The content specified herein is for the purpose of introducing ROHM's products (hereinafter
"Products"). If you wish to use any such Product, please be sure to refer to the specifications,
which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specified in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.
The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
implicitly, any license to use or exercise intellectual property or other rights held by ROHM and
other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the
use of such technical information.
The Products specified in this document are intended to be used with general-use electronic
equipment or devices (such as audio visual equipment, office-automation equipment, commu-
nication devices, electronic appliances and amusement devices).
The Products specified in this document are not designed to be radiation tolerant.
While ROHM always makes efforts to enhance the quality and reliability of its Products, a
Product may fail or malfunction for a variety of reasons.
Please be sure to implement in your equipment using the Products safety measures to guard
against the possibility of physical injury, fire or any other damage caused in the event of the
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The Products are not designed or manufactured to be used with any equipment, device or
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