BH6150F-E2 [ROHM]
Power Supply Support Circuit, Fixed, 1 Channel, +1.25V,4.2VV, BICMOS, PDSO8, SOP-8;
| 型号： | BH6150F-E2 |
| 厂家： | 
ROHM |
| 描述： | Power Supply Support Circuit, Fixed, 1 Channel, +1.25V,4.2VV, BICMOS, PDSO8, SOP-8 信息通信管理 光电二极管 |
| 文件： | 总8页 (文件大小：79K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Memory ICs
System reset IC
BH6150F
The BH6150F has two reset circuits, one detects the power supply voltage, and the other detects the input voltage.
With this one IC it is possible to apply a reset to the logic systems of CPUs, and mechanical systems.
Applications
•
Personal computers, CPUs, MPUs, logic circuits, reset
circuits for mechanical systems, level detector circuits,
battery voltage detector circuits, and backup power
supply switching circuits
Features
•
Two types of reset circuit provided.
1) Reset circuit 1 (input voltage detector)
Detection voltage: 1.25V (Typ.)
Transmission delay time: 200µs (Typ.)
Open collector output, and 10kΩ pull-up resistor on
chip.
2) Reset circuit 2 (supply voltage detector)
Detection voltage: 4.2V (Typ.)
Transmission delay time: 25, 50, 100 and 200 ms
(select using the Ct0 and Ct1 pins)
Manual reset function provided
Open collector output, and 10kΩ pull-up resistor on
chip.
Absolute maximum ratings (Ta = 25°C)
•
Parameter
Symbol
VCC
Limits
– 0.3 ~ + 7.0
450
Unit
V
Power supply voltage
Power dissipation
Pd
mW
°C
Operating temperature
Storage temperature
Topr
Tstg
– 20 ~ + 75
– 40 ~ + 125
°C
Reduced by 4.5mW for each increase in Ta of 1°C over 25°C.
1
Memory ICs
BH6150F
Block diagram
•
8
7
6
5
10k
Reset Circuit 1
–
–
+
Vref
1.25V
Reset Circuit 2
10k
+
–
Delay
Circuit
Vref
1.25V
1
2
3
4
Pin descriptions
•
Pin No.
Pin name
Ct0
Function
1
2
3
4
5
6
7
8
Delay time control
Reset circuit 1 input
Delay time control
GND
Input
Ct1
GND
Output 2
Output 1
VCC
Reset circuit 2 output
Reset circuit 1 output
Power supply
Manual reset
Manual reset input
When neither Ct0 or Ct1 are connected, the delay time is 100ms (Typ.).
2
Memory ICs
BH6150F
Input / output circuits
•
Ct0, Ct1
Input
Manual reset
Output 1, Output 2
3
Memory ICs
BH6150F
Electrical characteristics (unless otherwise specified VCC = 4.5V to 5.5V and Ta = 25°C)
•
Reset circuit 1
Parameter
Symbol
VS1
Min.
1.20
9
Typ.
1.25
15
Max.
1.30
23
Unit
V
Conditions
Detection voltage
—
—
Hysteresis voltage
∆VS1
TPLH1
TPHL1
VOL1
VIN
mV
µs
µs
V
High level transmission delay time
Low level transmission delay time
Output low level voltage
Input voltage range
80
200
10
500
—
CL = 100pF
CL = 100pF
—
—
0.1
—
0.4
VIN < 1.2V, IOL = 5mA
– 0.3
—
VCC
500
V
—
Input current
IIN
200
nA
VIN = 1.25V
Reset circuit 2
Parameter
Detection voltage
Symbol
VS2
Min.
4.0
30
Typ.
4.2
50
Max.
4.4
100
35
Unit
V
Conditions
—
—
Hysteresis voltage
∆VS2
TPLH2
mV
ms
ms
ms
ms
µs
V
High level transmission delay time
15
25
Ct0 = L, Ct1 = H
Ct0 = H, Ct1 = L
30
50
70
CL = 100pF
60
100
200
0.5
0.1
—
140
280
—
Ct0 = H, Ct1 = H
Ct0 = L, Ct1 = L
CL = 100pF
VCC < 4V, IOL = 5mA
—
120
—
Low level transmission delay time
Output low level voltage
TPHL2
VOL2
—
0.4
VCC
80
Input high level voltage
Input high level current
Input low level voltage
Manual reset
VRESH
IRESH
VRESL
2
V
—
20
µA
V
VRES = 2V
– 0.3
—
0.8
—
Common specifications
Parameter
Circuit current when off
Symbol
Min.
Typ.
Max.
Unit
Conditions
ICC1
ICC2
—
—
—
1000
2
1400
3
µA
mA
% / °C
V
VCC = 5V, VIN > VS1
VCC = 4V, VIN < VS1
—
Circuit current when on
Detection voltage temperature coefficient
Output high level voltage
Operation limit voltage
VS / ∆T
VOH1,2
VOPL1,2
0.01
—
VCC – 0.7 VCC – 0.4
0.71
—
IOH = 40µA
—
0.85
V
VSAT Ϲ 0.4V, RL = 1K
4
Memory ICs
BH6150F
Measurement circuit
•
VCC
RL = 1k
VOPL2: ON
CL
V
VOH1
VOL1
VOPL1
IOH
IOL
VCC
RL = 1k
VOPL2: ON
A
8
7
6
5
ICC1
ICC2
A
IRESH
MRES
VCC
OUT 1 OUT 2
VOH2
VOL2
VOPL2
IOH
IOL
CL
V
BH6150F
VCC
VRES
Ct0
1
IN
2
Ct1
3
GND
4
A
IIN
∆VS1
VIN
VS1
5
Memory ICs
BH6150F
Circuit operation
•
VIN
5V
VS1 + ∆VS1 (Typ. = 1.265V)
VS1 (Typ. = 1.25V)
0V
VOUT1
VOH
TPLH1
TPHL1
TPLH1
VOL1
VCC
VCC
VS2 + ∆VS2 (Typ. = 4.25V)
VS2 (Typ. = 4.2V)
0V
VOUT2
VOH
TPLH2
TPHL2
TPLH2
VOL2
6
Memory ICs
BH6150F
Electrical characteristic curves
•
25
20
15
1.35
1.30
1.25
10
5
1.20
1.15
– 20
0
20
40
60
80
– 20
0
20
40
60
80
AMBIENT TEMPERATURE: Ta (°C)
AMBIENT TEMPERATURE: Ta (°C)
Fig. 2 Reset circuit 1 Hysteresis
voltage vs.
Fig. 1 Reset circuit 1 detector
voltage vs.
ambient temperature
ambient temperature
280
240
200
160
4.4
4.3
4.2
4.1
120
80
4.0
3.8
– 20
0
20
40
60
80
– 20
0
20
40
60
80
AMBIENT TEMPERATURE: Ta (°C)
AMBIENT TEMPERATURE: Ta (°C)
Fig. 3 Reset circuit 1 high level
Fig. 4 Reset circuit 2 detector
voltage vs.
transmission delay time vs.
ambient temperature
ambient temperature
200
160
120
80
100
80
Ct0 = L, Ct1 = L
Ct0 = H, Ct1 = H
60
40
Ct0 = H, Ct1 = L
Ct0 = L, Ct1 = H
40
0
20
0
– 20
0
20
40
60
80
– 20
0
20
40
60
80
AMBIENT TEMPERATURE: Ta (°C)
AMBIENT TEMPERATURE: Ta (°C)
Fig. 5 Reset circuit 2 Hysteresis
voltage vs.
Fig. 6 Reset circuit 2 high level
transmission delay time vs.
ambient temperature
ambient temperature
7
Memory ICs
BH6150F
1.0
RL = 1k
0.5
RL = 27k
RL = ∞
0
0
0.5
POWER SUPPLY VOLTAGE: VCC (V)
1.0
Fig. 7 Operation limit voltage vs.
power supply voltage
External dimensions (Units: mm)
•
5.0 ± 0.2
8
5
1
4
1.27
0.4 ± 0.1
0.3Min.
0.15
SOP8
8
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