BM1R00023-E2_技术文档

Datasheet

Low Consumption and High Accuracy Shunt Regulator Built-in

High Efficiency and Low Standby Power,

CCM corresponding

Secondary Side Synchronous Rectification

Controller IC

BM1R00xxxF

General Description

Key Specifications

BM1R00xxxF is a synchronous rectification controller

to be used in the secondary-side output. It has a

built-in ultra-low consumption and high accuracy shunt

regulator, which significantly reduces standby power.

The shunt regulator is constructed in a completely

independent chip that enables it to operate as a GND

reference even when used in high side.



Input Voltage Range: 2.7V to 32V

Circuit Current (No Switching):

Circuit Current (Auto Shutdown) :

DRAIN Terminal Absolute Voltage:

800µA(Typ)

120µA (Typ)

120V

Operating Temperature Range: -40°C to +105°C

Package

W(Typ) x D(Typ) x H(Max)

5.00mm x 6.20mm x 1.71mm

At continuous mode operation, further space saving

can be realized when operating without the input

switching synchronizing signal of the primary side.

BM1R00xxxF also features a wide operating power

supply voltage range of 2.7V to 32V for various output

applications.

Finally, by adopting the high-voltage 120V process, it

is possible to monitor the drain voltage directly.

SOP8

Features



Built-in Ultra-Low Consumption Shunt Regulator

Reducing Standby Power Consumption

Synchronous Rectification FET Supports

High and Low Side



Lineup Table



120V High Voltage Process DRAIN terminal

Wide Input Operating Voltage Range of

2.7V to 32V

Supports LLC and PWM QR Controller

No Input Required on the Primary-Side at CCM

Built-in Overvoltage Protection for SH_IN and

SH_OUT Terminal

Built-in Thermal Shutdown Function

Built-in Auto Shutdown Function

SOP8 package

Latch Protection Series

Auto Restart Protection Series

Compulsion Compulsion

Function Name

ON Time

( μs)

1

OFF Time

( μs)

1.3

2

ON Time

( μs)

1

1.5

2.3

2.8

3.5

OFF Time

( μs)

1.3

2



BM1R00001

BM1R00002

BM1R00003

BM1R00004

BM1R00005

BM1R00006

BM1R00007

BM1R00008

BM1R00009

BM1R00010

BM1R00011

BM1R00012

BM1R00013

BM1R00014

BM1R00015

BM1R00016

BM1R00017

BM1R00018

BM1R00019

BM1R00020

BM1R00021

BM1R00022

BM1R00023

BM1R00024

BM1R00025

BM1R00026

BM1R00027

BM1R00028

BM1R00029

BM1R00030

BM1R00121

BM1R00122

BM1R00123

BM1R00124

BM1R00125

BM1R00126

BM1R00127

BM1R00128

BM1R00129

BM1R00130

BM1R00131

BM1R00132

BM1R00133

BM1R00134

BM1R00135

BM1R00136

BM1R00137

BM1R00138

BM1R00139

BM1R00140

BM1R00141

BM1R00142

BM1R00143

BM1R00144

BM1R00145

BM1R00146

BM1R00147

BM1R00148

BM1R00149

BM1R00150

1

3

3.6

4.6

1.3

2

3.6

4.6

1.3

2



1.5

2.3

2.8

3.5

NONE

3

3.6

4.6

1.3

2

3.6

4.6

1.3

2

Applications

3

 AC-DC Output Power Conversion Applications:

Charger, Adapter, TV, Rice Cooker, Humidifier,

Air Conditioning, Vacuum Cleaner, etc.

3.6

4.6

1.3

2

3.6

4.6

1.3

2

3

3.6

4.6

1.3

2

3.6

4.6

1.3

2

3

3.6

4.6

1.3

2

3

3.6

4.6

3.5

3.6

4.6

1.3

2

3

3.6

4.6

NONE

〇Product structure : Silicon monolithic integrated circuit 〇This product has no designed protection against radioactive rays

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BM1R00xxxF

Typical Application Circuits

VOUT

DRAIN

VCC

DRAIN

VCC

Primary

Controler

SR_GND

SH_IN

SR_GND

SH_IN

Primary

Controler

+

-

+

GATE

-

SH_OUT

GATE

SH_OUT

SH_GND

MAX_TON

GND

High Side Application (FLYBACK)

Low Side Application (FLYBACK)

Pin Configuration

(TOP VIEW)

VCC

DRAIN

SR_GND

SH_IN

SH_OUT

SH_GND

GATE

MAX_TON

Pin Description

Pin No.

Pin Name

Function

Power supply

1

2

3

4

5

6

7

8

VCC

SH_IN

Shunt regulator reference

Shunt regulator output

Shunt regulator ground

Set maximum on time

Gate drive

SH_OUT

SH_GND

MAX_TON

GATE

Synchronous rectification ground

DRAIN monitor

SR_GND

DRAIN

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BM1R00xxxF

Block Diagram

VOUT

+

-

GND

Primary

Side

Controller

LDO BLOCK

SHUNT_REGULATOR

-

2kohm

+

DRAIN_COMP

-

0.8V

+

PROTECTION BLOCK

・SH_OUT_OVP

・SH_IN_OVP

VCCx1.4

Timer

LATCH

SET_COMP

-

・TSD

+

S

Q

-100mV

R

MAX_TON

SR_GND

MAX_TON

BLOCK

BM1R00001-030: Include Timer LATCH

BM1R00121-150: Without Timer LATCH

Compulsion

ON TIME

RESET_COMP

AUTO

SHUTDOWN

BLOCK

+

Compulsion

OFF TIME

-

-6mV

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BM1R00xxxF

Description of Block

1. SET_COMP Block

Monitors the DRAIN terminal voltage, and outputs a signal to turn ON the FET if the DRAIN terminal voltage is less

than or equal to -100mV (Typ).

2. RESET_COMP Block

Monitors the DRAIN terminal voltage and outputs a signal to turn OFF the FET if the DRAIN terminal voltage is more

than or equal to -6mV (Typ).

3. Compulsion ON TIME Block

When the FET is turned ON due to SET_COMP detection, noise occurs on the DRAIN terminal. To prevent the noise

from turning OFF the FET, an ON state should be forced for a certain time. Compulsion ON time is within a range of

0µs (None) to 3.5µs, which is different for each series number (refer to page.1 table).

4. Compulsion OFF TIME Block

When the FET is turned OFF due to RESET_COMP detection, resonance waveforms appear on the DRAIN terminal.

To prevent the noise from turning ON the FET, an OFF state should be forced for a certain time. Compulsion OFF time

is within a range of 1.3µs to 4.6µs, which is different for each series number (refer to page.1 table).

Operation sequence of each block is shown on the figure below.

二次側

DRAIN

VOUT

-6mV

0V

-6mV

-100mV

SET COMP

0V

ON

RESET

RESET COMP

0V

RESET

VGATE

0V

ON

Compulsion

ON Time

0V

ON

TIME

ON

TIME

Compulsion

OFF Time

OFF

TIME

OFF

TIME

Figure 1. Operation sequence

About Maximum Input Frequency

The Maximum Operating Frequency of the IC depends on the Compulsion ON/OFF Time. For example, BM1R00026F and

BM1R00146F Compulsion ON and OFF Time is both equal to 0μs. Considering a variation of 9%, the maximum input

frequency is given by the following:

f_MAX= 1 / ((0μs + 1.3μs) x 1.09) = 706kHz

However, since the frequency varies greatly due to the input voltage and load, it will be necessary to select the series in

accordance with each application.

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BM1R00xxxF

Description of Block – continued

5. MAX_TON Block

MAX_TON block sets the maximum ON time. DRAIN terminal voltage starts counting when the rising edge of the

output voltage exceeds V_CC× 1.4V (Typ). In addition, the recounting starts when it detects another rising edge. The

synchronous rectification FET will be forced OFF after the set time has elapsed. The time can be adjusted by varying

the resistance value of the resistor connected to the MAX_TON terminal.

The relationship between the resistance value (R_{MAX_TON}) and set time (T_{MAX_TON}) is described as follows:

R_{MAX _TON}



k



 t_{MAX _TON}



µs





10 k/ s



Calculation Example:

If you want to set the maximum ON time to 10µs, the value of R_{MAX_TON}is as follows:

10µs 10 k/ s 100k





However, the formula above is for an ideal approximation only; it is still strongly advised that the operation of the actual

application should still be verified.

By setting this time, it becomes possible to prevent the simultaneous ON operation of the primary side and the

secondary side in continuous mode.

The drive sequence in continuous mode operation is shown in the figure below:

VOUT

(1)

(3)

Ns

Np

VH

+

-

I2

Vf

VG₁

I1

GND

LFB

RDRAIN2

VG1

VG2

Primary

Side

Controller

I₁

I₂

RDRAIN1

D1

VDS2

LDO BLOCK

V_CCx 1.4

DRAIN_COMP

-

V_DS2

+

VCCx1.4

SET_COMP

-

0V

C1

R1

-100mV

+

-100mV

S

Q

-100mV

-Vf

R

MAX_TON

BLOCK

(4)

(6)

VG₂

RMAX_TON

SR_GND

Compulsion

ON TIME

Period allotted for G1 and G2

to avoid concurrent ON state

at continuous mode

MAX_TON

TIMER

t_{MAX_ON}

RESET_COMP

+

Compulsion

OFF TIME

-

-6mV

(5)

Figure 2. The drive sequence in continuous mode operation

operation.

(2)

(1) Primary side FET = ON. Current I₁flows to the primary side FET. Secondary side drain voltage V_DS2rises.

(2) The V_DS2= V_CC× 1.4 detects the rise edge of the threshold, MAX_TON timer start.

(3) Primary side FET = OFF. Current I₂flows through the Body Diode of the secondary side FET (OFF state).

(4) Secondary side drain voltage V_DS2＜－100mV by I₂Current, Secondary side FET=ON.

(5) Elapsed the set time in MAX_TON terminals, the secondary-side FET = compulsory OFF.

(6) Since the I₂current flows through the Body Diode, V_fvoltage occurs.

a capacitor C₁and a Moreover, in order to reduce as much as possible the influence of the switching noise, resistor R₁

in series should be connected to the MAX_TON terminal. The capacitance should approximately be 1000pF, and the

resistance value is recommended to be around 1kΩ.This also serves as phase compensation of MAX_TON terminal

and therefore should be connected.

This function may be disabled by pulling up the MAX_TON terminal to VCC pin in quasi-resonant and current

resonance applications which do not operate on continuous mode. The 1000pF and 1kΩ resistor is also unnecessary.

6. AUTO SHUTDOWN Block

The Auto Shutdown block automatically turns the synchronous rectification ON/OFF depending on the presence or

absence of the DRAIN terminal pulse. Shutdown occurs if the input pulses on the DRAIN terminal has more than 200us

between pulses. This stops the synchronous rectification operation. The IC will restart the synchronous rectification

after it detects 256 occurrences of input pulses on the DRAIN terminal.

7. SHUNT REGULATOR Chip

A high-accuracy shunt regulator with ultra-low consumption is used for controlling the output voltage of the AC/DC.

Since the synchronous rectification and the shunt regulator are built in a completely different chip, GND separation is

possible. Therefore, it becomes possible to place the shunt regulator on the secondary-side GND reference in the

synchronous rectification applications in case of disposing the High Side FET. It can also be used as protection for the

comparator, the secondary side OVP, FET overheat protection, etc.

8. PROTECTION Block

When an abnormal condition is detected after the timer count is completed, the photo coupler from SH_OUT terminal is

driven to stop the switching operation on the primary side.

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BM1R00xxxF

Absolute Maximum Ratings (Ta = 25°C)

Parameter

Symbol

Rating

Unit

V_{MAX_VCC}

V_{MAX_MAX_TON}

V_{MAX_SH_IN}

V_{MAX_SH_OUT}

V_{MAX_GATE}

V_{MAX_DRAIN}

Tjmax

VCC Input Voltage

-0.3 to +40^{(Note 1)}

-0.3 to +40^{(Note 2)}

-0.3 to 15.5^{(Note 1)}

V

MAX_TON Input Voltage

SH_IN Input Voltage

SH_OUT Input Voltage

Gate Input Voltage

Drain Input Voltage

120^{(Note 1)(Note 3)}

V

°C

+150

Maximum Junction Temperature

-40 to +105

-55 to +150

°C

Topr

Operating Temperature Range

Storage Temperature

Tstr

(Note 1) Reference SR_GND

(Note 2) Reference SH_GND

(Note 3) When a negative voltage is applied, current flows through the ESD protection device.

This current value is about 6mA or less and will require a current limiting resistor to the DRAIN terminal

Caution: Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit

between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse in case the IC is operated over

the absolute maximum ratings.

Thermal Resistance ^{(Note 1)}

Thermal Resistance (Typ)

Parameter

Symbol

Unit

1s ^{(Note 3)}

2s2p ^{(Note 4)}

SOP8

Junction to Ambient

Junction to Top Characterization Parameter ^{(Note 2)}

θ_JA

197.4

21

109.8

19

°C/W

Ψ_JT

(Note 1) Based on JESD51-2A(Still-Air)

(Note 2) The thermal characterization parameter to report the difference between junction temperature and the temperature at the top center of the outside

surface of the component package.

(Note 3) Using a PCB board based on JESD51-3.

(Note 4) Using a PCB board based on JESD51-7.

Layer Number of

Measurement Board

Material

FR-4

Board Size

Single

114.3mm x 76.2mm x 1.57mmt

Top

Copper Pattern

Thickness

Footprints and Traces

70µm

Layer Number of

Measurement Board

Material

FR-4

Board Size

114.3mm x 76.2mm x 1.6mmt

2 Internal Layers

4 Layers

Top

Copper Pattern

Bottom

Copper Pattern

74.2mm x 74.2mm

Thickness

Copper Pattern

Thickness

Footprints and Traces

74.2mm x 74.2mm

70µm

35µm

70µm

Recommended Operating Conditions (Ta = 25°C)

Parameter

Symbol

Min

Typ

Max

Unit

V_CC

R_{MAX_TON}

R₁

2.7

56

20

32

300

2

V

Supply Voltage

MAX_TON Resistor Range

MAX_TON R1

-

1

kΩ

pF

0.5

680

MAX_TON C1

C₁

1000

2200

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Electrical Characteristics (Unless otherwise specified V_CC=20V Ta=25°C)

Spec

Parameter

Circuit Current

Symbol

Unit

mA

Conditions

MIN

TYP

MAX

f_SW=50KHz at Switching Mode

(GATE=OPEN)

Circuit Current1

I_ON1

0.5

1

2

Circuit Current at Sleep Mode

Circuit Current at Normal Mode

Circuit Current at UVLO Mode

VCC Item

I_SLEEP

I_ACT

60

350

18

120

800

35

200

1400

60

μA

At Shutdown Mode

Switching STOP Mode,

V_CC=1.9V

I_OFF

VCC UVLO Threshold Voltage1

VCC UVLO Threshold Voltage2

SR Controller BLOCK

V_UVLO1

V_UVLO2

2.00

1.95

2.30

2.25

2.65

2.60

V

V_CCSweep Up

V_CCSweep Down

GATE Turn ON Threshold

GATE Turn OFF Threshold

V_GONN

V_GOFF

-150

-10

-100

-6

-50

-1

mV

V_DRAIN=-300mV to +300mV

Excluding BM1R00026-30 and

BM1R00146-150 which has no

Compulsion ON Time

Compulsion ON Time^{(Note 5)}

t_CON

-9

-

9

%

Compulsion OFF Time^{(Note 5)}

t_COFF

MAX_TON BLOCK

MAX_TON Timer Start Threshold

Voltage

V_CC=20V, DRAIN Terminal

Voltage

V_{MAX_ON_START}

24

28

32

V

R_{MAX_TON}=100kΩ, V_CC=3V,

V_DRAIN=-0.3↔7V

MAX_TON Timer

t_{MAX_ON}

9.4

10

10.6

0.56

μs

MAX_TON Output Voltage

Auto Shutdown BLOCK

Auto Shutdown Detect Time

Auto Shutdown Cancel Pulse Number

Drain Monitor BLOCK

V_{MAX_ON}

0.24

0.40

V

t_SHD

120

-

200

265

320

-

μs

No Pulse to DRAIN Terminal

Input Pulse to DRAN Terminal

P_ACT

time

Drain Sink Current

I_{D_SINK}

130

-23

-3

250

-11

-1

550

-5

μA

V_DRAIN=120V

V_DRAIN=0.1V

V_DRAIN=-0.2V

Drain Terminal Source Current1

Drain Terminal Source Current2

Driver BLOCK

I_{DRAIN_SO1}

I_{DRAIN_SO2}

-0.3

GATE Terminal High Voltage

High Side FET ON-Resistance

(V_CC=2.7V)

V_{GATE_H1}

R_HIONR1

11

12

14

V

V_CC=20V

12.0

23.0

50.0

Ω

V_CC=2.7V, I_OUT= -10mA

High Side FET ON-Resistance

(V_CC=5V)

High Side FET ON-Resistance

(V_CC=10V)

Low Side FET ON-Resistance

(V_CC=2.7V)

Low Side FET ON-Resistance

(V_CC=5V)

R_HIONR2

R_HIONR3

R_LOWONR1

6.0

4.0

1.1

0.9

12.0

9.0

24.0

18.0

4.4

Ω

V_CC=5.0V, I_OUT= -10mA

V_CC=10V, I_OUT= -10mA

V_CC=2.7V, I_OUT= +10mA

V_CC=5.0V, I_OUT= +10mA

2.2

R_LOWONR2

t_{DELAY_ON}

t_{DELAY_OFF}

1.8

3.6

Propagation Delay to FET Turn ON

Propagation Delay to FET Turn OFF

-

50

100

-

ns

V_DRAIN=-300mV to +300mV

(Note 5) See the lineup table in page1.

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BM1R00xxxF

Electrical Characteristics (Unless otherwise specified V_{SH_OUT}=20V Ta=25°C)

Spec

Parameter

Symbol

Unit

Conditions

MIN

TYP

MAX

Shunt Regulator BLOCK (Other Chip)

V_{SH_OUT}=5V

Reference Voltage

V_SHREF

∆V_SHEMP

∆V_SHREF1

0.796 0.800 0.804

V

SH_OUT Sink

Current=100µA

V_{SH_OUT}=5V

SH_OUT Sink

Current=100µA

Temperature=25°C to 105°C

V_{SH_OUT}=2.7V to 5V

Reference Voltage

Changing Ratio by Temperature

-

-4

1

-

mV

SH_OUT Coefficient

of the Reference Voltage1

mV SH_OUT Sink

Current=100µA

V_{SH_OUT}=5V to 20V

mV SH_OUT Sink

Current=100µA

SH_OUT Coefficient

of the Reference Voltage2

∆V_SHREF2

I_{SH_IN}

-

-0.2

-

2

-

0.2

-

Reference Input Current

Dynamic Impedance1

0.0

0.3

μA V_{SH_IN}=2V

SH_OUT Sink Current

Z_{SH_OUT1}

Ω

=100µA to 300µA

(V_{SH_OUT}=2.7V)

SH_OUT Sink Current

=100µA to 300µA

(V_{SH_OUT}=20V)

Dynamic Impedance2

Z_{SH_OUT2}

-

0.2

-

SH_OUT Current at SH_IN=Low

SH_OUT Sink Current

I_{SH_OUT}

20

1

40

-

75

-

μA V_{SH_IN}=0V, V_{SH_OUT}=20V

I_{SH_OUT_MIN}

mA V_{SH_IN}=0.85V, V_{SH_OUT}=2.7V

V_{SHI_OVP1}

V_{SHI_OVP2}

V_{SHO_OVP1}

V_{SHO_OVP2}

t_LATCH2

V

SH_IN OVP Detection Voltage1

SH_IN OVP Detection Voltage2

SH_OUT OVP Detection Voltage

SH_OUT OVP Detection Voltage2

0.90

0.85

32.5

31.5

100

1.00

0.95

35

1.10

1.05

37.5

36.5

300

V_{SH_IN}= Sweep Up

V_{SH_IN}= Sweep Down

V_{SH_OUT}Sweep Up

V_{SH_OUT}Sweep Down

V

34

V

200

μs

LATCH Timer

SH_OUT Sink Current

at LATCH Mode

I_{LATCH_SH_IN_OVP}

1.3

2.5

5

mA V_{SH_OUT}=5V, V_{SH_IN}=0V

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BM1R00xxxF

Typical Performance Curves

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

Ta=105°C

1.2

Ta=25°C

Ta=105°C

1.0

0.8

0.6

0.4

0.2

0.0

Ta=25°C

Ta=-40°C

0

5

10

15

20

25

30

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

Input Voltage Vcc[V]

Input Voltage : V_CC[V]

Input Voltage Vcc[V]

Input Voltage : V_CC[V]

Figure 3. Circuit Current vs Input Voltage

(Stop Switching State)

Figure 4. Circuit Current vs Input Voltage

(Stop Switching State VCC Zoom)

200

180

160

140

120

100

80

70

60

50

40

30

20

10

0

Ta=105°C

Ta=25°C

Ta=105°C

Ta=25°C

Ta=-40°C

60

Ta=-40°C

40

20

0

5

10

15

20

25

30

0

5

10

15

20

25

30

Input Voltage Vcc[V]

Input Voltage : V_CC[V]

SH_OUT Voltage : V_{SH_OUT}[V]

Figure 5. Circuit Current vs Input Voltage

(at Shut Down State)

Figure 6. Circuit Current vs SH_OUT Voltage

(V_{SH_IN}=0V)

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BM1R00xxxF

Typical Performance Curves - continued

0.820

0.815

11.0

10.8

10.6

10.4

10.2

10.0

9.8

V_CC=5V

VCC=5V

V

=20V

VCC=20V

CC

0.810

V_{SH_OUT}=20V

V_{SH_OUT}=5V

0.805

0.800

V =3V

VCC=^C3^CV

0.795

V_{SH_OUT}=3V

9.6

0.790

0.785

0.780

9.4

9.2

9.0

-40 -20

0

20 40

60

80 100

-40 -20

0

20

40

60

80 100

Temperature Ta [℃]

Temperature : Ta [°C]

Figure 7. SH_IN Voltage vs Temperature

(I_{SH_OUT}=100µA)

Figure 8. MAX_TON Timer vs Temperature

(R_{MAX_TON}=100kΩ, V_DRAIN=-0.3V<->VCC x 2)

-90

-95

0

-1

-2

-3

V_{SH_OUT}=3V

-4

V_{SH_OUT}=20V

-100

-105

-110

-5

V_{SH_OUT}=5V

-6

V_{SH_OUT}=20V

V_{SH_OUT}=3V

-7

V_{SH_OUT}=5V

-8

-9

-10

-40 -20

0

20

40

60

80 100

-40 -20

0

20

40

60

80 100

Temperature Ta [℃]

Temperature : Ta [°C]

Figure 10. Gate OFF Threshold vs Temperature

(DRAIN Sweep Up)

Figure 9. Gate ON Threshold vs Temperature

(DRAIN Sweep Down)

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Typical Performance Curves - continued

300

250

200

150

100

50

5000

4000

Ta=105°C

Ta=25°C

3000

2000

1000

0

Ta=25°C

Ta=-40°C

0

760

780

800

820

840

740

760

780 800

820

840

860

SH_IN Voltage VSH_IN [V]

SH_IN Voltage : V_{SH_IN}[mV]

Figure 12. SH_OUT Current vs SH_IN Voltage

(V_{SH_OUT}=5V, ZOOM UP)

Figure 11. SH_OUT Current vs SH_IN Voltage

(V_{SH_OUT}=5V)

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Timing Chart

DRAIN

5V

4V

2.3V

≒1.3V

VOUT(VCC)

REG4V(Internal IC)

0.5V

BG_0.5V

(Internal IC)

BG_OK

(Internal IC)

1V

REF1V

(Internal IC)

4V

DRAIN

4COUNT

DRV4V

(Internal IC)

4V

VCC=2.3V

VCC_UVLO

MAX_TON

0.4V

DRAIN

9COUNT

GATE

AUTO_SHUTDOWN

(Internal IC)

200us

SHUTDOWN

DRAIN

265COUNT

Figure 13. Start Up Sequence

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Application Examples

VOUT

CVCC

PC1

R

DRAIN2

L

FB

DRAIN

VCC

R

FB1

FB2

D

1

R

DRAIN1

SR_GND

SH_IN

+

-

COUT

C

FB1

GATE

SH_OUT

SH_GND

C

FB2

R

MAX_TON

R1C1

GND

M1

Figure 14. Flyback Application Circuit

(Low Side FET)

M1

VOUT

LFB

CVCC

R

DRAIN1

D1

PC1

R

DRAIN2

DRAIN

VCC

RFB1

+

-

COUT

SR_GND

SH_IN

RFB2

CFB1

GATE

SH_OUT

SH_GND

CFB2

R

MAX_TON

R1 C1

GND

Figure 15. Flyback Application Circuit

(High Side FET)

Built-in shunt regulator in the IC has been completely separated from internal and synchronous rectification control IC.

Therefore, the shunt regulator is possible to be used as a GND reference in High Side type of flyback application.

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M2

N O T _ X A M

E T A G

D N G _ H S

T U O _ H S

L

FB2

R

DRAIN3

N I _ H S

C C V

D N G _ R S

N I A R D

R

DRAIN4

D2

Shunt regulator used as

overvoltage (OVP) protection

C

VCC2

PC2

VOUT

Disable MAX_TON by pulling up to VCC if not in

continuous mode operation such as in current resonance

and quasi-resonant applications

C

VCC1

PC1

DRAIN

VCC

R

FB1

FB2

SR_GND

SH_IN

+

COUT

CFB1

-

R

GATE

SH_OUT

SH_GND

C

FB2

D1

MAX_TON

Shunt regulator used in

feedback operation

LFB1

GND

M1

Figure 16. Resonant Half-bridge Application Circuit

Regarding Protection Applications

The built-in shunt regulator is high-voltage, low current consumption, high accuracy, and also suitable as a comparator for

protection application. On the above current resonant circuit, the shunt regulator is used as an overvoltage protection

circuit.

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Selection of Externally Connected Components

1. MAX_TON Pin Setting

A resistance value which is connected to the MAX_TON terminal is used to set the timer to force the GATE output OFF.

(For detailed operation, please see "each block Operation / MAX_TON blocks")

Set timer is proportional to the resistance value which can be set in the range of 56k to 300k. This IC is capable of an

accuracy of 10us ± 6% at 100kΩ. However, accuracy deteriorates as the resistance value gets further away from

100kΩ.

For example, 5.6µs ±0.9µs at 56kΩ, 30µs ±4.5µs at 300kΩ.

(See graph below)

34.5u

t

Tp

P

30u

25.5u

Jitter

G1

G₁

Set the MAX_TON timer so that

the FET of the primary side (G₁)

and the secondary side (G₂) is

not simultaneously ON

10.6u

10.0u

9.4u

G2

G₂

6.5u

5.6u

4.7u

MAX_TON

TIMER

TMAX_ON

t_{MAX_ON}

56k

100k

300k

MAX_TON Resistor [ohm]

Figure 18. Primary FET and Secondary FET

Sequence at CCM Mode

Figure 17. MAX_TON Timer vs

MAX_TON Resistor(R_{MAX_TON}

)

To prevent destruction due to surge current in continuous mode, set the MAX_TON timer before turning on the primary

side FET (G₁) to forcibly OFF the secondary side FET (G₂). Regarding such variations, select a resistance value of

MAX_TON terminal so that the MAX_ON timer setting time is less than one cycle in the primary side (T_P> T_{MAX_ON}).

- The primary side of the maximum frequency = f_MAX[Hz]

- The primary side of the maximum frequency accuracy = ∆f_MAX[%]

- The primary side of the jitter frequency = f_JITTER[Hz]

- Secondary side MAX_TON timer time = t_{MAX_ON}

- Secondary side MAX_TON timer time accuracy = ∆t_{MAX_ON}

- Secondary side MAX_TON When the connection resistance accuracy = ∆R

10000 [kΩ][kHz]

R_{MAX_TON}[kΩ] <

(1+∆t_{MAX_ON}[%]+∆R[%] +∆f_MAX[%])×(f_MAX[kHz]+f_JITTER[kHz])

Frequency Variation Ratio

Maximum Frequency Value

2. Calculation Example

Primary side frequency 100kHz ± 5%

Primary side jitter frequency 8kHz

Secondary side MAX_TON timer accuracy = 7%

Secondary side MAX_TON connection resistance accuracy = 1%

10000 [kΩ][kHz]

R_{MAX_TON}[kΩ] <

= 81.94 [kΩ]

(1+5%+1%+7%)×(100kHz+8kHz)

With these conditions, MAX_TON Resistor(R_{MAX_TON}) should be set to 81kΩ or less. In addition, it is recommended that

the temperature characteristics of each component should also be taken into account.

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I/O Equivalent Circuits

PIN 1: VCC / PIN 6: GATE / PIN 7: SR_GND

PIN 8: DRAIN

Internal REG

1.VCC

8.DRAIN

SR

block

6.GATE

7.SR_GND

PIN 2: SH_IN / PIN 3: SH_OUT / PIN 4: SH_GND

PIN 5: MAX_TON

Internal REG

3.SH_OUT

2.SH_IN

4.SH_GND

5.MAX_TON

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Notes on the layout

VOUT

(1)

(5)

C_VCC

PC1

(6)

(2)

DRAIN

VCC

FB1

R

SR _GND

SH_IN

+

-

OUT

C

C_FB1

R_FB2

SH_OUT

SH_GND

GATE

C_FB2

MAX_TON

R

MAX_

TON

(5)

R1C1

M

1

(3)

LFB1

(8)

Rsnb

Csnb

GND

(7)

(4)

Figure 19. Flyback Application Circuit

(Low Side FET)

(1) VCC line may malfunction under the influence of switching noise.

Therefore, it is recommended to insert a capacitor C_VCCbetween the VCC and SR_GND terminal.

(2) SH_IN terminal is a high impedance line. To avoid crosstalk, electrical wiring should be as short as possible and not in

parallel with the switching line.

(3) MAX_TON terminal has a 0.4V output. The external components of the MAX_TON terminal affects the forced OFF time due

to switching. Thus, R1 and C1 should be connected to MAX_TON terminal as near as possible. It is also recommended to

use an independent electrical wiring in connection with SR_GND terminal.

(4) The synchronous rectification controller IC must accurately monitor the V_DSgenerated in the FET. Accordingly, the electrical

wiring between the DRAIN to DRAIN and SR_GND to SOURCE of the IC and FET respectively should be connected

independently.

(5) The SH_GND of the shunt regulator and the feedback resistors of V_OUTare recommended to be connected to the GND of

the output with an independent electrical wiring.

(6) The DRAIN terminal is a 0↔100V switching line. Use a narrow wiring and connect as short as possible.

(7) Use an independent wiring if connecting a snubber circuit between the DS of the FET. The connection of the transformer

output and the SOURCE of the FET should be thick and short as possible.

(8) Due to the DRAIN pin detects the small voltage, a malfunction which the switch turns ON/OFF caused by the surge voltage

may occur. So that, the filters such as the ferrite bead are recommended for alleviating the surge voltage.

Configuration example^{(Note 6)}

:

L_FB1( a ferrite bead for suppressing the surge voltage) : MMZ1608S202A

D₁( a schottky barrier diode) : RB751G-40

R_DRAIN1( a filter resistor for the FET turn off ) : 0.3k - 2kΩ

R_DRAIN2( a current limiting resistor to the DRAIN terminal) : 150Ω

(Note 6) The value is not a guaranteed value, but for reference. Please choose the optimum values of the components after sufficient evaluations based

on the actual application.

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Operational Notes

1. Reverse Connection of Power Supply

Connecting the power supply in reverse polarity can damage the IC. Take precautions against reverse polarity when

connecting the power supply, such as mounting an external diode between the power supply and the IC’s power supply

pins.

2. Power Supply Lines

Design the PCB layout pattern to provide low impedance supply lines. Furthermore, connect a capacitor to ground at

all power supply pins. Consider the effect of temperature and aging on the capacitance value when using electrolytic

capacitors.

3. Ground Voltage

Except for pins the output and the input of which were designed to go below ground, ensure that no pins are at a

voltage below that of the ground pin at any time, even during transient condition.

4. Ground Wiring Pattern

When using both small-signal and large-current ground traces, the two ground traces should be routed separately but

connected to a single ground at the reference point of the application board to avoid fluctuations in the small-signal

ground caused by large currents. Also ensure that the ground traces of external components do not cause variations

on the ground voltage. The ground lines must be as short and thick as possible to reduce line impedance.

5. Thermal Consideration

Should by any chance the maximum junction temperature rating be exceeded the rise in temperature of the chip may

result in deterioration of the properties of the chip. In case of exceeding this absolute maximum rating, increase the

board size and copper area to prevent exceeding the maximum junction temperature rating.

6. Recommended Operating Conditions

These conditions represent a range within which the expected characteristics of the IC can be approximately obtained.

The electrical characteristics are guaranteed under the conditions of each parameter.

7. Inrush Current

When power is first supplied to the IC, it is possible that the internal logic may be unstable and inrush current may flow

instantaneously due to the internal powering sequence and delays, especially if the IC has more than one power supply.

Therefore, give special consideration to power coupling capacitance, power wiring, width of ground wiring, and routing

of connections.

8. Operation Under Strong Electromagnetic Field

Operating the IC in the presence of a strong electromagnetic field may cause the IC to malfunction.

9. Testing on Application Boards

When testing the IC on an application board, connecting a capacitor directly to a low-impedance output pin may subject

the IC to stress. Always discharge capacitors completely after each process or step. The IC’s power supply should

always be turned off completely before connecting or removing it from the test setup during the inspection process. To

prevent damage from static discharge, ground the IC during assembly and use similar precautions during transport and

storage.

10. Inter-pin Short and Mounting Errors

Ensure that the direction and position are correct when mounting the IC on the PCB. Incorrect mounting may result in

damaging the IC. Avoid nearby pins being shorted to each other especially to ground, power supply and output pin.

Inter-pin shorts could be due to many reasons such as metal particles, water droplets (in very humid environment) and

unintentional solder bridge deposited in between pins during assembly to name a few.

11. Unused Input Terminals

Input pins of an IC are often connected to the gate of a MOS transistor. The gate has extremely high impedance and

extremely low capacitance. If left unconnected, the electric field from the outside can easily charge it. The small charge

acquired in this way is enough to produce a significant effect on the conduction through the transistor and cause

unexpected operation of the IC. So unless otherwise specified, unused input pins should be connected to the power

supply or ground line.

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Operational Notes - continued

12. Regarding Input Pins of the IC

This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them

isolated. P-N junctions are formed at the intersection of the P layers with the N layers of other elements, creating a

parasitic diode or transistor. For example (refer to figure below):

When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.

When GND > Pin B, the P-N junction operates as a parasitic transistor.

Parasitic diodes inevitably occur in the structure of the IC. The operation of parasitic diodes can result in mutual

interference among circuits, operational faults, or physical damage. Therefore, conditions that cause these diodes to

operate, such as applying a voltage lower than the GND voltage to an input pin (and thus to the P substrate) should be

avoided.

Resistor

Transistor (NPN)

Pin A

Pin B

B

E

C

Pin A

B

C

E

P

P⁺

N

P⁺

P

P⁺

N

Parasitic

Elements

Parasitic

Elements

P Substrate

GND GND

P Substrate

GND

Parasitic

Elements

Parasitic

Elements

N Region

close-by

Figure 20. Example of Monolithic IC Structure

13. Ceramic Capacitor

When using a ceramic capacitor, determine the dielectric constant considering the change of capacitance with

temperature and the decrease in nominal capacitance due to DC bias and others.

14. Area of Safe Operation (ASO)

Operate the IC such that the output voltage, output current, and the maximum junction temperature rating are all within

the Area of Safe Operation (ASO).

15. Thermal Shutdown Circuit(TSD)

BM1R00121F – BM1R00150F (Auto Restart Protection Series)

This IC has a built-in thermal shutdown circuit that prevents heat damage to the IC. Normal operation should always be

within the IC’s maximum junction temperature rating. If however the rating is exceeded for a continued period, the

junction temperature (Tj) will rise which will activate the TSD circuit that will turn OFF all output pins. When the Tj falls

below the TSD threshold, the circuits are automatically restored to normal operation.

Note that the TSD circuit operates in a situation that exceeds the absolute maximum ratings and therefore, under no

circumstances, should the TSD circuit be used in a set design or for any purpose other than protecting the IC from heat

damage.

BM1R00001F – BM1R00030F (Latch Protection Series)

This IC has a built-in thermal shutdown circuit that prevents heat damage to the IC. Normal operation should always be

within the IC’s maximum junction temperature rating. If however the rating is exceeded for a continued period, the

junction temperature (Tj) will rise which will activate the TSD circuit that will turn OFF all output pins. The IC should be

powered down and turned ON again to resume normal operation because the TSD circuit keeps the outputs at the OFF

state even if the TJ falls below the TSD threshold.

Note that the TSD circuit operates in a situation that exceeds the absolute maximum ratings and therefore, under no

circumstances, should the TSD circuit be used in a set design or for any purpose other than protecting the IC from heat

damage.

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Ordering Information

B M 1 R 0

0

x

F

-

E 2

Part Number

Package

F:SOP8

Packaging and forming specification

E2: Embossed tape and reel

(SOP8)

Marking Diagram

SOP8 (TOP VIEW)

Part Number Marking

LOT Number

1PIN MARK

Part Number Marking

Package

Orderable Part Number

BM1R00xxxF-E2

00xxx

SOP8

Latch Protection Series

Auto Restart Protection Series

Compulsion Compulsion

Part Number

Marking

Part Number

Marking

Function Name

ON Time

( μs)

1

OFF Time

( μs)

1.3

2

Function Name

ON Time

( μs)

1

OFF Time

( μs)

1.3

2

BM1R00001

BM1R00002

BM1R00003

BM1R00004

BM1R00005

BM1R00006

BM1R00007

BM1R00008

BM1R00009

BM1R00010

BM1R00011

BM1R00012

BM1R00013

BM1R00014

BM1R00015

BM1R00016

BM1R00017

BM1R00018

BM1R00019

BM1R00020

BM1R00021

BM1R00022

BM1R00023

BM1R00024

BM1R00025

BM1R00026

BM1R00027

BM1R00028

BM1R00029

BM1R00030

00001

00002

00003

00004

00005

00006

00007

00008

00009

00010

00011

00012

00013

00014

00015

00016

00017

00018

00019

00020

00021

00022

00023

00024

00025

00026

00027

00028

00029

00030

BM1R00121

BM1R00122

BM1R00123

BM1R00124

BM1R00125

BM1R00126

BM1R00127

BM1R00128

BM1R00129

BM1R00130

BM1R00131

BM1R00132

BM1R00133

BM1R00134

BM1R00135

BM1R00136

BM1R00137

BM1R00138

BM1R00139

BM1R00140

BM1R00141

BM1R00142

BM1R00143

BM1R00144

BM1R00145

BM1R00146

BM1R00147

BM1R00148

BM1R00149

BM1R00150

00121

00122

00123

00124

00125

00126

00127

00128

00129

00130

00131

00132

00133

00134

00135

00136

00137

00138

00139

00140

00141

00142

00143

00144

00145

00146

00147

00148

00149

00150

1

3

1

3

1

1.5

3.6

4.6

1.3

2

1

1.5

3.6

4.6

1.3

2

1.5

3

1.5

3

1.5

2.3

3.6

4.6

1.3

2

1.5

2.3

3.6

4.6

1.3

2

2.3

3

2.3

3

2.3

2.8

3.6

4.6

1.3

2

2.3

2.8

3.6

4.6

1.3

2

2.8

3

2.8

3

2.8

3.5

3.6

4.6

1.3

2

2.8

3.5

3.6

4.6

1.3

2

3.5

3

3.5

3

3.5

3.6

4.6

1.3

2

3

3.6

4.6

3.5

3.6

4.6

1.3

2

3

3.6

4.6

NONE

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Physical Dimension, Tape and Reel Information

Package Name

SOP8

(Max 5.35 (include.BURR))

(UNIT : mm)

PKG : SOP8

Drawing No. : EX112-5001-1

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Revision History

Date

Revision

Changes

2.Mar.2016

20.Apr. 2016

001

002

Data Sheet Revision1 Release.

Modification: P4, P5 VOUT->VCC

Modification: P6, 74.2mm2->74.2mm x 74.2mm

Modification: P15, Fig17 graph.

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Notice

Precaution on using ROHM Products

1. Our Products are designed and manufactured for application in ordinary electronic equipments (such as AV equipment,

OA equipment, telecommunication equipment, home electronic appliances, amusement equipment, etc.). If you

intend to use our Products in devices requiring extremely high reliability (such as medical equipment ^{(Note 1)}, transport

equipment, traffic equipment, aircraft/spacecraft, nuclear power controllers, fuel controllers, car equipment including car

accessories, safety devices, etc.) and whose malfunction or failure may cause loss of human life, bodily injury or

serious damage to property (“Specific Applications”), please consult with the ROHM sales representative in advance.

Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way responsible or liable for any

damages, expenses or losses incurred by you or third parties arising from the use of any ROHM’s Products for Specific

Applications.

(Note1) Medical Equipment Classification of the Specific Applications

JAPAN

USA

EU

CHINA

CLASSⅢ

CLASSⅣ

CLASSⅡb

CLASSⅢ

2. ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor

products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate

safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which

a failure or malfunction of our Products may cause. The following are examples of safety measures:

[a] Installation of protection circuits or other protective devices to improve system safety

[b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure

3. Our Products are designed and manufactured for use under standard conditions and not under any special or

extraordinary environments or conditions, as exemplified below. Accordingly, ROHM shall not be in any way

responsible or liable for any damages, expenses or losses arising from the use of any ROHM’s Products under any

special or extraordinary environments or conditions. If you intend to use our Products under any special or

extraordinary environments or conditions (as exemplified below), your independent verification and confirmation of

product performance, reliability, etc, prior to use, must be necessary:

[a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents

[b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust

[c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2,

H2S, NH3, SO2, and NO2

[d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves

[e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items

[f] Sealing or coating our Products with resin or other coating materials

[g] Use of our Products without cleaning residue of flux (even if you use no-clean type fluxes, cleaning residue of

flux is recommended); or Washing our Products by using water or water-soluble cleaning agents for cleaning

residue after soldering

[h] Use of the Products in places subject to dew condensation

4. The Products are not subject to radiation-proof design.

5. Please verify and confirm characteristics of the final or mounted products in using the Products.

6. In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse. is applied,

confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power

exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect

product performance and reliability.

7. De-rate Power Dissipation depending on ambient temperature. When used in sealed area, confirm that it is the use in

the range that does not exceed the maximum junction temperature.

8. Confirm that operation temperature is within the specified range described in the product specification.

9. ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in

this document.

Precaution for Mounting / Circuit board design

1. When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product

performance and reliability.

2. In principle, the reflow soldering method must be used on a surface-mount products, the flow soldering method must

be used on a through hole mount products. If the flow soldering method is preferred on a surface-mount products,

please consult with the ROHM representative in advance.

For details, please refer to ROHM Mounting specification

Notice-PGA-E

Rev.003

Precautions Regarding Application Examples and External Circuits

1. If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the

characteristics of the Products and external components, including transient characteristics, as well as static

characteristics.

2. You agree that application notes, reference designs, and associated data and information contained in this document

are presented only as guidance for Products use. Therefore, in case you use such information, you are solely

responsible for it and you must exercise your own independent verification and judgment in the use of such information

contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses

incurred by you or third parties arising from the use of such information.

Precaution for Electrostatic

This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper

caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be

applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron,

isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).

Precaution for Storage / Transportation

1. Product performance and soldered connections may deteriorate if the Products are stored in the places where:

[a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2

[b] the temperature or humidity exceeds those recommended by ROHM

[c] the Products are exposed to direct sunshine or condensation

[d] the Products are exposed to high Electrostatic

2. Even under ROHM recommended storage condition, solderability of products out of recommended storage time period

may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is

exceeding the recommended storage time period.

3. Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads

may occur due to excessive stress applied when dropping of a carton.

4. Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of

which storage time is exceeding the recommended storage time period.

Precaution for Product Label

A two-dimensional barcode printed on ROHM Products label is for ROHM’s internal use only.

Precaution for Disposition

When disposing Products please dispose them properly using an authorized industry waste company.

Precaution for Foreign Exchange and Foreign Trade act

Since concerned goods might be fallen under listed items of export control prescribed by Foreign exchange and Foreign

trade act, please consult with ROHM in case of export.

Precaution Regarding Intellectual Property Rights

1. All information and data including but not limited to application example contained in this document is for reference

only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any

other rights of any third party regarding such information or data.

2. ROHM shall not have any obligations where the claims, actions or demands arising from the combination of the

Products with other articles such as components, circuits, systems or external equipment (including software).

3. No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any

third parties with respect to the Products or the information contained in this document. Provided, however, that ROHM

will not assert its intellectual property rights or other rights against you or your customers to the extent necessary to

manufacture or sell products containing the Products, subject to the terms and conditions herein.

Other Precaution

1. This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM.

2. The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written

consent of ROHM.

3. In no event shall you use in any way whatsoever the Products and the related technical information contained in the

Products or this document for any military purposes, including but not limited to, the development of mass-destruction

weapons.

4. The proper names of companies or products described in this document are trademarks or registered trademarks of

ROHM, its affiliated companies or third parties.

Notice-PGA-E

Rev.003


型号：	BM1R00023-E2
厂家：	ROHM
描述：	High Efficiency and Low Standby Power CCM corresponding
文件：	总26页 (文件大小：2223K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

BM1R00023-E2 [ROHM]

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