BM2P107QK-Z [ROHM]
本产品为所有存在插口的产品提供优良的系统。可轻松设计非绝缘的高效率转换器。内置800V耐压启动电路，有助于实现低功耗。内置电流检测电阻，可实现小型电源设计。使用电流模式控制，进行逐周期电流限制，发挥带宽和瞬态响应的优异性能。振荡频率固定为100kHz。内置跳频功能，有助于实现低EMI。内置800V耐压超级结MOSFET，设计更容易。;
| 型号： | BM2P107QK-Z |
| 厂家： | 
ROHM |
| 描述： | 本产品为所有存在插口的产品提供优良的系统。可轻松设计非绝缘的高效率转换器。内置800V耐压启动电路，有助于实现低功耗。内置电流检测电阻，可实现小型电源设计。使用电流模式控制，进行逐周期电流限制，发挥带宽和瞬态响应的优异性能。振荡频率固定为100kHz。内置跳频功能，有助于实现低EMI。内置800V耐压超级结MOSFET，设计更容易。 转换器 |
| 文件： | 总27页 (文件大小：996K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Datasheet
AC/DC Convertor IC
PWM Type DC/DC Converter IC
Built-in Switching MOSFET for
Non-Isolated Type
BM2P104Q-Z BM2P107QK-Z
General Description
Key Specifications
◼ Power Supply Voltage Operation Range
The PWM type DC/DC converter for AC/DC provides
an optimum system for all products that include an
electrical outlet. It enables simpler design of a high
effective converter specializing in non-isolated devices.
This series has a built-in starter circuit that tolerates
730 V / 800 V, and it contributes to low power
consumption. With a current detection resistor for
switching as internal device, it can be designed as
small power supply. Since current mode control is
utilized, current is restricted in each cycle and excellent
performance is demonstrated in bandwidth and
transient response. The oscillation frequency is fixed to
100 kHz A frequency hopping function is also on chip,
and it contributes to low EMI. In addition, a built-in
super junction MOSFET which tolerates 730 V / 800 V
makes the design easy.
VCC:
8.00 V to 10.81 V
DRAIN:
730 V / 800 V(Max)
1.20 mA(Typ)
◼ Pulse Operation Current
◼ Burst Operation Current
◼ Oscillation Frequency
0.45 mA(Typ)
100 kHz(Typ)
◼ Operation Temperature Range -40 °C to +105 °C
◼ MOSFET ON Resistor
BM2P104Q-Z:
BM2P107QK-Z:
4.0 Ω(Typ)
7.5 Ω(Typ)
Package
W(Typ) x D(Typ) x H(Max)
9.27 mm x 6.35 mm x 8.63 mm
pitch 2.54 mm
DIP7K
Features
◼ PWM Current Mode Method
◼ Frequency Hopping Function
◼ Burst Operation at Light Load
◼ Built-in 730 V / 800 V Starter Circuit that Tolerates
◼ Built-in 730 V / 800 V Super Junction MOSFET
◼ VCC Pin Under Voltage Protection
◼ VCC Pin Over Voltage Protection
◼ Over Current Limiter Function per Cycle
◼ Soft Start Function
Applications
LED Lights, Air Conditioners, Cleaners etc.
Typical Application Circuit
D2
VCC
L
GND_IC
VOUT
DRAIN
AC
Filter
Input
DRAIN
D1
GND
〇Product structure : Silicon integrated circuit 〇This product has no designed protection against radioactive rays
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Pin Configuration
(TOP VIEW)
DRAIN
DRAIN
N.C.
N.C.
GND_IC
N.C.
VCC
Pin Descriptions
Pin No.
ESD Diode
VCC GND_IC
Pin Name
I/O
Function
1
2
3
4
5
6
7
N.C.
N.C.
-
-
Non Connection
-
-
Non Connection
GND pin
-
○
-
-
-
GND_IC
N.C.
I/O
-
Non Connection
-
VCC
I
Power supply input pin
MOSFET DRAIN pin
MOSFET DRAIN pin
-
○
○
○
DRAIN
DRAIN
I/O
I/O
-
-
Block Diagram
VCC
DRAIN
5
6,7
Starter
VCC UVLO
+
-
Thermal
Internal
Regulator
Protection
100 μs
Filter
+
-
VCC OVP
Super
Junction
Internal Block
MOSFET
OLP
128 ms
/512 ms
Timer
+
-
S
R
Q
DRIVER
Burst
Comparator
+
-
Dynamic Current
-
+
PWM Control
Logic
&
Timer
Limitter
+
PWM
Comparator
Reference
Voltage
-
-
Reference
Voltage
Current
Limitter
+
Current
Sensing
Leading-Edge
BlankingTime
+
-
Reference
Voltage
Soft Start
3
MAX
DUTY
GND_IC
Frequency
Hopping
OSC
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Description of Blocks
1
Back Converter
This is the IC for exclusive use of non-isolated type back converter.
<Basic operation of back converter>
1.1 When the MOSFET for Switching is ON
When the MOSFET turns ON, current IL flows to coil L and energy is stored. At this moment, the voltage of the
GND_IC pin becomes the voltage near the DRAIN pin, and the diode D1 is OFF.
(푉 − 푉푂푈푇
)
ꢀ푁
퐼퐿 =
× 푡표푛
ꢁ
Where:
푉
ꢀ푁
is the DRAIN Voltage
푉푂푈푇 is the Output Voltage
퐼퐿
푡표푛
is the Inductor Current
is ON-Time of MOSFET
D2
5
4
3
VCC
L
GND_IC
VOUT
ON
DRAIN
2
1
6
7
Current
IL
AC
Filter
Input
DRAIN
D1
VIN
GND
Figure 1. Back Converter Operation (MOSFET=ON)
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1
Back Converter – continued
1.2 When the MOSFET for Switching is OFF
When the MOSFET turns OFF, the energy stored in coil is output via diode. At the moment, the MOSFET is OFF.
푉푂푈푇
퐼퐿 =
× 푡표푓푓
ꢁ
Where:
푉푂푈푇 is the Output Voltage
퐼퐿 is the Inductor Current
푡표푓푓 is OFF-Time of MOSFET
D2
5
4
3
VCC
L
GND_IC
VOUT
OFF
2
1
6
7
Current
DRAIN
IL
AC
Filter
Input
DRAIN
D1
VIN
GND
Figure 2. Back Converter Operation (MOSFET=OFF)
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Description of Blocks - continued
2
Start Sequences
Start sequences are shown in Figure 3. See the sections below for detailed descriptions.
DRAIN-GND
VCNT
VCHG2
VCHG1
V
UVLO1
UVLO2
V
tFOLP1
VCC - GND_IC
VOUT - GND
IOUT
OVER
LOAD
OVER
LOAD
NORMAL
LOAD
OLP setting
LIGHT
LOAD
tFOLP2
tFOLP1
tFOLP1
BURST
MODE
SWITCHING
C
A
B
D
E
F
G
H I
Figure 3. Start Sequences Timing Chart
A: The input voltage is applied to the DRAIN pin and the VCC pin voltage rises.
J
K
B: If the VCC pin voltage exceeds VUVLO1, the IC starts to operate. And if the IC judges the other protection functions
as normal condition, it starts switching operation.
The soft start function limits the over current limiter value to prevent any excessive voltage or current rising.
When the switching operation starts, the VOUT rises.
C: Until the VOUT becomes constant value from starting-up, the VCC pin voltage drops by the VCC pin consumption
current.
D: After switching starts, it is necessary that the output voltage is set to rating voltage within tFOLP1 (128 ms Typ).
E: At light load, the IC starts burst operation to restrict the consumption power.
F: When the load exceeds a certain electric power, the IC starts over load operation.
G: If the setting over load status lasts for t FOLP1 (128 ms Typ), switching is turned OFF.
H: When the VCC pin voltage becomes less than VCHG1, recharge operation is started.
I: When the VCC pin voltage becomes more than VCHG2, recharge operation is stopped.
J: After tFOLP2 (512 ms Typ), the over load protection circuit starts switching.
K: Same as G.
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Description of Blocks – continued
3
Stop Sequences
Stop sequences are shown in Figure 4.
0.0 V
AC VOLTAGE
DRAIN-GND
VOUT-GND
VCNT
VCC-GND_IC
VUVLO1
VCHG2
VCHG1
VUVLO2
OVER
LOAD
NORMAL
LOAD
IOUT
SWITCHING
A
B
C
D E
F
Figure 4. Stop Sequences Timing Chart
A: Normal operation
B: The input AC voltage is stopped. The DRAIN voltage starts to drop.
C: If the DRAIN voltage drops below a certain voltage, it becomes maximum duty and over load protection operates.
D: If the output voltage drops, the VCC pin voltage drops too. And recharge operation is started.
E: The recharge operation is stopped.
F: If the DRAIN voltage drops below a certain voltage, the VCC pin voltage lowers UVLO or less in order to stop
recharge operation.
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Description of Blocks – continued
4
Start Circuit
This IC enables low standby electric power and high-speed startup because it has a built-in start circuit. The
consumption current after startup is only idling current ISTART3 (Typ=10 μA). The startup current flows from the DRAIN
pin.
D2
VCC
5
4
3
VCC UVLO
+
-
L
GND_IC
VOUT
2
1
6
7
AC
Input
Filter
DRAIN
D1
GND
Figure 5. Start Circuit
StartUp Current[A]
IST ART2
IST ART1
IST ART3
VCC[V]
VUVLO1
VSC
Figure 6. Startup Current vs VCC Voltage
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Description of Blocks – continued
5
The VCC Pin Protection Function
This IC has the internal protection function at the VCC pin shown in below.
1) Under voltage protection function UVLO
2) Over voltage protection function VCC OVP
3) VCC recharge function
5.1 VCC UVLO / VCC OVP Function
VCC UVLO function and VCC OVP function are auto recovery type comparators that have voltage hysteresis. VCC
OVP has an internal mask time. If the condition that the VCC pin voltage is higher than VOVP1 lasts for tCOMP (100 μs
Typ), it performs detection. The recovery requirements are that the VCC pin voltage is lower than VOVP2
.
5.2 VCC Recharge Function
If the VCC pin drops to VCHG1 after once the VCC pin becomes more than VUVLO1 and the IC starts to operate, the
VCC charge function operates. At that time, the VCC pin is charged from the DRAIN pin through start circuit. When
the VCC pin voltage is more than VCHG2, charge is stopped.
DRAIN
VOVP1
VOVP2
VCNT
100 µs
VUVLO1
VUVLO2
VCHG2
VCHG1
VCC
VOUT
ON
ON
VCC
UVLO
ON
VCC
OVP
VCC
Recharge
Function
ON
ON
SWITCHING
C
I
J
A
B
D
E
F
G
H
Figure 7. VCC UVLO / VCC OVP / VCC Recharge Function Timing Chart
A: The input voltage is applied to the DRAIN pin and the VCC pin voltage rises.
B: When the VCC pin voltage becomes higher than VUVLO1, the IC starts operating. And if the IC judges the other
protection functions as normal condition, it starts switching operation. The soft start function limits the over
current limiter value to prevent any excessive voltage or current rising. When the switching operation starts, the
VOUT rises.
C: When the VCC pin voltage becomes higher than VOVP1, VCC OVP timer operates.
D: When the condition that the VCC pin voltage is higher than VOVP1 lasts for tCOMP (100 μs Typ), the IC detects
VCC OVP and stops switching.
E: When the VCC pin voltage becomes lower than VOVP2, VCC OVP is released.
F: When the input power supply is turned OFF, the DRAIN pin voltage drops.
G: When the VCC pin voltage becomes less than VCHG1, recharge function is started.
H: When the VCC pin voltage becomes higher than VCHG2, recharge function is stopped.
I: When the VCC pin voltage becomes lower than VCHG1, recharge function is started. However, the supply to the
VCC pin decrease and the VCC pin voltage drops because of low DRAIN voltage.
J: When the VCC pin voltage becomes lower than VUVLO2, VCC UVLO function starts operating.
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Description of Blocks – continued
6
DC/DC Driver
This performs current mode PWM control. An internal oscillator sets a fixed oscillation frequency fSW (100 kHz Typ). This
IC has a built-in oscillation frequency hopping function. The maximum duty is DMAX (75 % Typ). To achieve the low
consumption power at light load, it also has an internal burst mode circuit.
6.1 Setting of the Output Voltage
Adopting the non-isolated type without photo coupler, the VCC voltage should be set to rating value. VCC Voltage
means the voltage between the VCC pin and the GND_IC pin. The output voltage VOUT is defined by the formula
below. The voltage when the MOSFET is OFF is shown in Figure 8.
푉푂푈푇 = 푉퐶푁푇 + 푉퐹퐷2 − 푉퐹퐷1
Where:
푉퐹퐷1 is the forward voltage of diode D1.
푉퐹퐷2 is the forward voltage of diode D2.
푉
퐶푁푇
is the VCC Control Voltage
D2
[ VCNT-VFD1
]
5
4
3
VCC
L
GND_IC
VOUT
[ -VFD1
]
[ VCNT-VFD1 + VFD2
]
2
1
6
7
DRAIN
DRAIN
AC
Filter
Input
D1
[ 0V ]
GND
Figure 8. Back Converter Circuit (At MOSFET Turned OFF)
At light load, the output voltage may rise because the VCC voltage is difference from the output voltage. In this case,
it is necessary that the output pin is connected to resistor and the voltage should be lowered. The circuit diagram is
shown in Figure 9.
D2
5
4
3
VCC
L
GND_IC
VOUT
2
1
6
7
DRAIN
DRAIN
AC
Input
Filter
R1
D1
GND
Figure 9. Circuit to Take Measure against Voltage Rising at Light Load
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6.1 Setting of the Output Voltage – continued
This IC has a few external parts by fixing the VCC voltage and it enables simpler design. If you adjust the output
voltage, it can become the variable voltage by adding zener diodes. However, it is necessary to consider the
dispersion of the diodes.
The output voltage VOUT is defined by the formula below. The voltage when the MOSFET is OFF is shown in
Figure 10.
푉푂푈푇 = 푉퐶푁푇 + 푉퐹퐷2 − 푉퐹퐷1 + 푉푍퐷1
Where:
푉퐹퐷1 is the forward voltage of diode D1.
푉퐹퐷2 is the forward voltage of diode D2.
푉푍퐷1 is the zener diode ZD1 voltage.
푉
퐶푁푇
is the VCC Control Voltage
[ VCNT-VFD1 +VZD1
D2
]
[ VCNT-VFD1
]
ZD1
5
4
VCC
L
3
GND_IC
VOUT
[ VCNT-VFD1 + VFD2 +VZD1
[ -VFD1
]
]
2
1
6
7
DRAIN
DRAIN
AC
Filter
Input
D1
[ 0V ]
GND
Figure 10. Back Converter Output Dispersion Circuit (At MOSFET Turned OFF)
6.2 Frequency Circuit
mode 1: burst operation
mode 2: fixed frequency operation (It operates in maximum frequency.)
mode 3: over load operation (pulse operation is stopped and burst operation is started.)
Switching
Frequency
[kHz]
mode3
mode1
mode2
100kHz
Pulse OFF
Output
Power
[W]
Figure 11. State Transition of Oscillation Frequency
6.3 Frequency Hopping Function
Frequency hopping function achieves low EMI by change the frequency at random. The wave width of frequency’s
upper limit is ±6 % for basic frequency.
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6
DC/DC Driver – continued
6.4 PWM Error Amp and PWM Comparator
The internal error Amp achieves the reduction of external parts. In addition, this IC adopts current mode method. It
makes the design easy.
6.5 Over Current Limiter
This IC has an internal over current limiter per switching cycle. This function monitors the coil current and if it
exceeds a certain current, the IC stops switching. Additionally, an internal current detection resistor contributes to
reduction of parts and improvement of efficiency. The peak current by which the IC switches to the over load mode
is determined by the formula below.
(푉퐷푅퐴ꢀ푁 − 푉푂푈푇
)
푃푒푎푘 푐푢푟푟푒푛푡 = 퐼ꢂ퐸퐴퐾
+
× 푡푑푒푙푎푦
ꢁ
Where:
퐼ꢂ퐸퐴퐾 is the over current limiter internal the IC.
푉퐷푅퐴ꢀ푁 is the DRAIN voltage.
푉푂푈푇 is the output voltage.
ꢁ is the Coil value.
푡푑푒푙푎푦 is the Delay time after detection of over current limiter.
6.6 Dynamic Over Current Limiter
This IC has a built-in dynamic over current limiter. In case that coil current exceeds IDPEAK (1.60 A Typ) two times
consecutively, it stops pulse operation for tDPEAK (128 μs Typ).
2 Count
IDPEAK
2
1
IL
Typ=128 µs
DC/DC ON
DC/DC
DC/DC OFF
Figure 12. Dynamic Over Current Limiter
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DC/DC Driver – continued
6.7 Soft Start Operation
At starting up, this function controls the over current limiter value in order to prevent any excessive voltage or
current rising. The details are shown in Figure 13. The IC enables the soft start operation by changing the over
current limiter value with time.
Coil Current[A]
IPEAK
IDPEAK
IDPEAK
IDPEAKx0.75
IDPEAKx0.50
IPEAK
IDPEAKx0.25
IPEAKx0.75
IPEAKx0.50
IPEAKx0.25
16.0
8.0
4.0
Time [ms]
Figure 13. Soft Start Function
7
8
Output Over Load Protection Function (OLP comparator)
Output over load protection function monitors load status and stops switching at over load. In the over load condition,
the output voltage lowers. If a state is electric power set in the IC or more continues for tFOLP1 (128 ms Typ), the IC stops
switching by judging the status as over load. The recovery after detection of OLP is tFOLP2 (512 ms Typ) later.
Temperature Protection Circuit
Temperature protection circuit stops the oscillation of DC/DC if the IC becomes more than a certain temperature.
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Description of Blocks – continued
9
Operation Mode of Protection Circuits
The operation mode of protection functions is shown in Table 1.
Table 1. The operation mode of protection functions
VCC Pin
Under Voltage
Protection
VCC Pin
Over Voltage
Protection
Over Temperature
Protection
Over Power
Protection
Function
Detection
150 °C
(at rising
temperature)
the current detected
by over current
detection or more
VOVP1
(at rising voltage)
VUVLO2
(at falling voltage)
85 °C
(at falling
temperature)
VOVP2
(at falling voltage)
under over current
detection
VUVLO1
(at rising voltage)
Release
Detection Timer
Release Timer
Type
-
100 µs
100 µs
128 ms
512 ms
-
-
-
Auto Recovery
Auto Recovery
Auto Recovery
Auto Recovery
Timer Reset
Condition 1
VCC UVLO
Detection
VCC UVLO
Detection
VCC UVLO
Detection
-
-
<Detection>
Release Condition
<Release>
<Detection>
Release Condition
<Release>
<Detection>
Release Condition
<Release>
Timer Reset
Condition 2
Detection Condition Detection Condition Detection Condition
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Description of Blocks – continued
10 External Components
Each part should be designed considering the input voltage condition and output load condition.
Figure 14 shows application circuit.
D2
CVCC
5
4
3
VCC
L
GND_IC
VOUT
2
1
6
7
DRAIN
DRAIN
AC
Input
Filter
COUT
ROUT
D1
CD-S
CIN
GND
Figure 14. Application circuit
10.1 Output Capacitor COUT
Output capacitor COUT should be designed considering the spec of output ripple voltage and to startup until
tFOLP1(128 ms Typ). It is recommended to be 100 μF or more.
10.2 Inductor L
The value of inductor should be designed considering the spec of output load condition and the input voltage range.
If inductor value is too large, dc/dc operation becomes continuous mode and increases heat. If inductor value is too
small, it is impossible that the IC controls in the Minimum ON width tMINON or less, so there is a possibility of over
current detection at normal operation load. It is recommended to be 270 μH to 680 μH.
10.3 VCC Pin Capacitor CVCC
The VCC pin Capacitor CVCC adjusts startup time and response of Error AMP.
It is recommended to design less than 1/100 value of COUT
.
10.4 Capacitor between the DRAIN Pin and the GND_IC Pin CD-S
It is recommended to design the capacitor between the DRAIN pin and the GND_IC pin CD-S less than 22 pF.
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Absolute Maximum Ratings (Ta=25 °C)
Parameter
Symbol
Rating
Unit
Conditions
-0.3 to +650
730
-0.3 to +800
-0.3 to +32.0
V
V
V
V
DRAIN(BM2P104Q-Z)
DRAIN(tpulse < 10 μs) (Note 1)
DRAIN(BM2P107QK-Z)
VCC
Maximum Applied Voltage 1
VMAX1
Maximum Applied Voltage 1
Maximum Applied Voltage 2
VMAX1
VMAX2
Consecutive operation
(BM2P104Q-Z)
Consecutive operation
DRAIN Current Pulse
DRAIN Current Pulse
IDD
IDD
4.00
2.00
A
A
(BM2P107QK-Z)
(Note 2)
Power Dissipation
Maximum Junction Temperature
Storage Temperature Range
Pd
Tjmax
Tstg
1.00
+150
-55 to +150
W
°C
°C
Caution 1: Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit
between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is
operated over the absolute maximum ratings.
Caution 2: Should by any chance the maximum junction temperature rating be exceeded the rise in temperature of the chip may result in deterioration of the
properties of the chip. In case of exceeding this absolute maximum rating, design a PCB with power dissipation taken into consideration by increasing
board size and copper area so as not to exceed the maximum junction temperature rating.
(Note 1) Duty is less than 1 %.
(Note 2) Derate by 4.563 mW/°C when operating Ta=25 °C or more when mounted (on 70 mm x 70 mm x 1.6 mm thick, glass epoxy on single-layer substrate).
Thermal Loss
The thermal design should set operation for the following conditions.
1. The ambient temperature Ta must be 105 °C or less.
2. The IC’s loss must be within the Power Dissipation Pd.
The thermal abatement characteristics are as follows.
(PCB: 70 mm x 70 mm x 1.6 mm single layer board, the back side is copper foil)
1.5
1.0
0.5
0.0
0
25
50
75
100
125
150
Ta [℃]
Figure 15. Thermal Abatement Characteristics
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Recommended Operating Conditions
Specifications
Parameter
Symbol
Unit
Conditions
Min
-
-
-
Typ
Max
650
730
800
10.81
-
-
-
-
V
V
V
V
DRAIN(BM2P104Q-Z)
DRAIN(tpulse < 10 μs) (Note 3)
DRAIN(BM2P107QK-Z)
VCC
Power Supply Voltage Range 1
VDRAIN
Power Supply Voltage Range 1
Power Supply Voltage Range 2
VDRAIN
VCC
8.00
Operating Temperature
(Note 3) Duty is less than 1 %
Topr
-40
-
+105
°C
Surrounding temperature
Electrical Characteristics in MOSFET Part (Unless otherwise noted, Ta=25 °C)
Specifications
Parameter
Symbol
Unit
Conditions
Min
650
Typ
Max
-
ID=1 mA / VGS=0 V
(BM2P104Q-Z)
ID = 1 mA, VGS = 0 V
tpulse < 10 μs
-
V
Voltage between DRAIN
and SOURCE
V(BR)DDS
730
-
-
V
VDS=650 V / VGS=0 V
(BM2P104Q-Z)
ID=0.25 A / VGS=10 V
(BM2P104Q-Z)
ID=1 mA / VGS=0 V
(BM2P107QK-Z)
DRAIN Leak Current
ON Resistor
IDSS
-
-
0
4.0
-
100
4.5
-
μA
Ω
RDS(ON)
V(BR)DDS
Voltage between DRAIN
and SOURCE
800
V
VDS=800 V / VGS=0 V
DRAIN Leak Current
ON Resistor
IDSS
-
-
0
100
μA
Ω
(BM2P107QK-Z)
ID=0.25 A / VGS=10 V
(BM2P107QK)
RDS(ON)
7.5
10.5
Electrical Characteristics in Start Circuits Part (Unless otherwise noted, Ta=25 °C)
Specifications
Parameter
Symbol
Unit
Conditions
Min
0.150
1.200
-
Typ
0.300
3.000
10
Max
0.600
6.000
20
Start Current 1
Start Current 2
OFF Current
Start Current Switching Voltage
ISTART1
ISTART2
ISTART3
VSC
mA
mA
μA
V
VCC=0 V
VCC=7 V
After UVLO is released
0.500
0.800
1.200
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Electrical Characteristics in Control IC Part (Unless otherwise noted, Ta=25 °C)
Specifications
Parameter
[Circuit Current]
Symbol
Unit
Conditions
Min
Typ
Max
At pulse operation
Drain=open
Circuit Current (ON) 1
ION1
ION2
-
1200
450
1650
550
μA
μA
Circuit Current (ON) 2
300
At burst operation
[VCC Pin Protection Function]
VCC UVLO Voltage 1
VCC UVLO Voltage 2
VCC UVLO Hysteresis
VCC Recharge Start Voltage
VCC Recharge Stop Voltage
VCC Recharge Hysteresis
VCC Control Voltage
VCC OVP Voltage 1
VUVLO1
VUVLO2
VUVLO3
VCHG1
VCHG2
VCHG3
VCNT
VOVP1
VOVP2
VOVP3
tCOMP
8.10
6.60
-
7.00
7.40
0.20
9.90
10.81
-
8.80
7.30
1.50
7.70
8.10
0.40
10.00
11.50
11.00
-
9.50
8.00
-
8.40
8.80
0.70
10.10
12.19
-
V
V
V
V
V
V
V
V
V
V
μs
VCC rising
VCC dropping
VUVLO3=VUVLO1-VUVLO2
VCC sweep up
VCC sweep down
VCC OVP Voltage 2
VCC OVP Hysteresis
VCC OVP Timer
0.21
50
0.63
150
100
Control IC part
Over Temperature Protection 1
Over Temperature Protection 2
TSD1
TSD2
TSD3
120
150
85
180
°C
°C
°C
At temperature rising(Note 4)
Control IC part
At temperature dropping(Note 4)
-
-
-
-
Over Temperature Protection
Hysteresis
(Note 4)
65
[PWM Type DC/DC Driver Block]
Oscillation Frequency
Frequency Hopping Width
Maximum Duty
FB OLP ON Detection Timer
FB OLP OFF Detection Timer
Soft Start Time 1
fSW
fDEL
94
-
100
6.0
106
-
kHz
kHz
%
ms
ms
ms
ms
ms
DMAX
tFOLP1
tFOLP2
tSS1
tSS2
tSS3
66
80
332
2.8
5.6
11.2
75
84
128
512
4.0
8.0
16.0
176
692
5.2
10.4
20.8
Soft Start Time 2
Soft Start Time 3
[Over Current Detection Block]
Over Current Detection
Over Current Detection in SS1
Over Current Detection in SS2
Over Current Detection in SS3
Dynamic Over Current Detection
Dynamic Over Current Detection
in SS1
Dynamic Over Current Detection
in SS2
Dynamic Over Current Detection
in SS3
IPEAK
IPEAK1
IPEAK2
IPEAK3
IDPEAK
0.720
-
-
-
0.800
0.200
0.400
0.600
1.600
0.880
-
-
-
A
A
A
A
A
(Note 4)
(Note 4)
(Note 4)
1.440
1.740
(Note 4)
(Note 4)
(Note 4)
IDPEAK1
IDPEAK2
IDPEAK3
tDPEAK
-
-
0.400
0.800
1.200
128
-
A
A
-
-
-
A
Dynamic Over Current Enforced
OFF Time
64
170
μs
(Note 4)
(Note 4)
Leading Edge Blanking Time
tLEB
-
-
150
300
-
ns
ns
Minimum ON Width
tMINON
550
(Note 4) Not 100% tested.
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Application Examples
Show a flyback circuitry example in Figure 15.
Be careful with the DRAIN voltage because high voltage is produced by ringing in turn OFF.
With this IC, It become able to work to 730V.
D2
VCC
L
GND_IC
VOUT
DRAIN
AC
Filter
Input
DRAIN
D1
GND
Figure 16. Flyback Application Ciucit
730V
650V
DRAIN
0V
tpulse < 10 μs(Duty < 1%)
Figure 17. Drain Pin Ringing Waveform
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I/O Equivalence Circuit
7
DRAIN
DRAIN
6
DRAIN
DRAIN
5
VCC
-
-
VCC
Internal
MOSFET
Internal
MOSFET
-
GND_IC
N.C.
GND_IC
N.C.
N.C.
1
2
3
GND_IC
GND_IC
4
Non Connection
Non Connection
Non Connection
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TSZ22111 • 15 • 001
BM2P104Q-Z BM2P107QK-Z
Operational Notes
1.
2.
Reverse Connection of Power Supply
Connecting the power supply in reverse polarity can damage the IC. Take precautions against reverse polarity when
connecting the power supply, such as mounting an external diode between the power supply and the IC’s power
supply pins.
Power Supply Lines
Design the PCB layout pattern to provide low impedance supply lines. Separate the ground and supply lines of the
digital and analog blocks to prevent noise in the ground and supply lines of the digital block from affecting the analog
block. Furthermore, connect a capacitor to ground at all power supply pins. Consider the effect of temperature and
aging on the capacitance value when using electrolytic capacitors.
3.
4.
Ground Voltage
Ensure that no pins are at a voltage below that of the ground pin at any time, even during transient condition.
Ground Wiring Pattern
When using both small-signal and large-current ground traces, the two ground traces should be routed separately but
connected to a single ground at the reference point of the application board to avoid fluctuations in the small-signal
ground caused by large currents. Also ensure that the ground traces of external components do not cause variations
on the ground voltage. The ground lines must be as short and thick as possible to reduce line impedance.
5.
6.
Recommended Operating Conditions
The function and operation of the IC are guaranteed within the range specified by the recommended operating
conditions. The characteristic values are guaranteed only under the conditions of each item specified by the electrical
characteristics.
Inrush Current
When power is first supplied to the IC, it is possible that the internal logic may be unstable and inrush current may flow
instantaneously due to the internal powering sequence and delays, especially if the IC has more than one power
supply. Therefore, give special consideration to power coupling capacitance, power wiring, width of ground wiring, and
routing of connections.
7.
Testing on Application Boards
When testing the IC on an application board, connecting a capacitor directly to a low-impedance output pin may
subject the IC to stress. Always discharge capacitors completely after each process or step. The IC’s power supply
should always be turned off completely before connecting or removing it from the test setup during the inspection
process. To prevent damage from static discharge, ground the IC during assembly and use similar precautions during
transport and storage.
8.
9.
Inter-pin Short and Mounting Errors
Ensure that the direction and position are correct when mounting the IC on the PCB. Incorrect mounting may result in
damaging the IC. Avoid nearby pins being shorted to each other especially to ground, power supply and output pin.
Inter-pin shorts could be due to many reasons such as metal particles, water droplets (in very humid environment) and
unintentional solder bridge deposited in between pins during assembly to name a few.
Unused Input Pins
Input pins of an IC are often connected to the gate of a MOS transistor. The gate has extremely high impedance and
extremely low capacitance. If left unconnected, the electric field from the outside can easily charge it. The small
charge acquired in this way is enough to produce a significant effect on the conduction through the transistor and
cause unexpected operation of the IC. So unless otherwise specified, unused input pins should be connected to the
power supply or ground line.
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22.Dec.2020 Rev.002
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Operational Notes – continued
10. Regarding the Input Pin of the IC
This IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them isolated. P-N
junctions are formed at the intersection of the P layers with the N layers of other elements, creating a parasitic diode or
transistor. For example (refer to figure below):
When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.
When GND > Pin B, the P-N junction operates as a parasitic transistor.
Parasitic diodes inevitably occur in the structure of the IC. The operation of parasitic diodes can result in mutual
interference among circuits, operational faults, or physical damage. Therefore, conditions that cause these diodes to
operate, such as applying a voltage lower than the GND voltage to an input pin (and thus to the P substrate) should be
avoided.
Resistor
Transistor (NPN)
Pin A
Pin B
Pin B
B
E
C
Pin A
B
C
E
P
P+
P+
N
P+
P
P+
N
N
N
N
N
N
N
Parasitic
Elements
Parasitic
Elements
P Substrate
GND GND
P Substrate
GND
GND
Parasitic
Elements
Parasitic
Elements
N Region
close-by
Figure 18. Example of IC Structure
11. Ceramic Capacitor
When using a ceramic capacitor, determine a capacitance value considering the change of capacitance with
temperature and the decrease in nominal capacitance due to DC bias and others.
12. Thermal Shutdown Circuit (TSD)
This IC has a built-in thermal shutdown circuit that prevents heat damage to the IC. Normal operation should always
be within the IC’s maximum junction temperature rating. If however the rating is exceeded for a continued period, the
junction temperature (Tj) will rise which will activate the TSD circuit that will turn OFF power output pins. When the Tj
falls below the TSD threshold, the circuits are automatically restored to normal operation.
Note that the TSD circuit operates in a situation that exceeds the absolute maximum ratings and therefore, under no
circumstances, should the TSD circuit be used in a set design or for any purpose other than protecting the IC from
heat damage.
13. Over Current Protection Circuit (OCP)
This IC incorporates an integrated overcurrent protection circuit that is activated when the load is shorted. This
protection circuit is effective in preventing damage due to sudden and unexpected incidents. However, the IC should
not be used in applications characterized by continuous operation or transitioning of the protection circuit.
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TSZ02201-0F1F0A200500-1-2
22.Dec.2020 Rev.002
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TSZ22111 • 15 • 001
BM2P104Q-Z BM2P107QK-Z
Ordering Information
B M 2 P 1 0 4 Q
-
Z
-
B M 2 P 1 0 7 Q K
Z
Lineup
Orderable Part
Number
BM2P104Q-Z
BM2P107QK-Z
IDD (A)
VDRAIN(Max) (V)
RDS(ON)(Typ) (Ω)
Package
DIP7K
Part Number Marking
4.00
2.00
730
800
4.0
7.5
BM2P104Q
BM2P107QK
Making Diagram
DIP7K (TOP VIEW)
Part Number Marking
LOT Number
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Physical Dimension and Packing Information
Package Name
DIP7K
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BM2P104Q-Z BM2P107QK-Z
Revision History
Date
Revision
001
Changes
16.Jul.2019
New release
P15 Change the Absolute Maximum Ratings
P18 Addition of the Application Examples
22.Dec.2020
002
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TSZ02201-0F1F0A200500-1-2
22.Dec.2020 Rev.002
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TSZ22111 • 15 • 001
Notice
Precaution on using ROHM Products
1. Our Products are designed and manufactured for application in ordinary electronic equipment (such as AV equipment,
OA equipment, telecommunication equipment, home electronic appliances, amusement equipment, etc.). If you
intend to use our Products in devices requiring extremely high reliability (such as medical equipment (Note 1), transport
equipment, traffic equipment, aircraft/spacecraft, nuclear power controllers, fuel controllers, car equipment including car
accessories, safety devices, etc.) and whose malfunction or failure may cause loss of human life, bodily injury or
serious damage to property (“Specific Applications”), please consult with the ROHM sales representative in advance.
Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way responsible or liable for any
damages, expenses or losses incurred by you or third parties arising from the use of any ROHM’s Products for Specific
Applications.
(Note1) Medical Equipment Classification of the Specific Applications
JAPAN
USA
EU
CHINA
CLASSⅢ
CLASSⅣ
CLASSⅡb
CLASSⅢ
CLASSⅢ
CLASSⅢ
2. ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor
products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate
safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which
a failure or malfunction of our Products may cause. The following are examples of safety measures:
[a] Installation of protection circuits or other protective devices to improve system safety
[b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure
3. Our Products are designed and manufactured for use under standard conditions and not under any special or
extraordinary environments or conditions, as exemplified below. Accordingly, ROHM shall not be in any way
responsible or liable for any damages, expenses or losses arising from the use of any ROHM’s Products under any
special or extraordinary environments or conditions. If you intend to use our Products under any special or
extraordinary environments or conditions (as exemplified below), your independent verification and confirmation of
product performance, reliability, etc, prior to use, must be necessary:
[a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents
[b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust
[c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2,
H2S, NH3, SO2, and NO2
[d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves
[e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items
[f] Sealing or coating our Products with resin or other coating materials
[g] Use of our Products without cleaning residue of flux (Exclude cases where no-clean type fluxes is used.
However, recommend sufficiently about the residue.) ; or Washing our Products by using water or water-soluble
cleaning agents for cleaning residue after soldering
[h] Use of the Products in places subject to dew condensation
4. The Products are not subject to radiation-proof design.
5. Please verify and confirm characteristics of the final or mounted products in using the Products.
6. In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse, is applied,
confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power
exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect
product performance and reliability.
7. De-rate Power Dissipation depending on ambient temperature. When used in sealed area, confirm that it is the use in
the range that does not exceed the maximum junction temperature.
8. Confirm that operation temperature is within the specified range described in the product specification.
9. ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in
this document.
Precaution for Mounting / Circuit board design
1. When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product
performance and reliability.
2. In principle, the reflow soldering method must be used on a surface-mount products, the flow soldering method must
be used on a through hole mount products. If the flow soldering method is preferred on a surface-mount products,
please consult with the ROHM representative in advance.
For details, please refer to ROHM Mounting specification
Notice-PGA-E
Rev.004
© 2015 ROHM Co., Ltd. All rights reserved.
Precautions Regarding Application Examples and External Circuits
1. If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the
characteristics of the Products and external components, including transient characteristics, as well as static
characteristics.
2. You agree that application notes, reference designs, and associated data and information contained in this document
are presented only as guidance for Products use. Therefore, in case you use such information, you are solely
responsible for it and you must exercise your own independent verification and judgment in the use of such information
contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses
incurred by you or third parties arising from the use of such information.
Precaution for Electrostatic
This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper
caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be
applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron,
isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).
Precaution for Storage / Transportation
1. Product performance and soldered connections may deteriorate if the Products are stored in the places where:
[a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2
[b] the temperature or humidity exceeds those recommended by ROHM
[c] the Products are exposed to direct sunshine or condensation
[d] the Products are exposed to high Electrostatic
2. Even under ROHM recommended storage condition, solderability of products out of recommended storage time period
may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is
exceeding the recommended storage time period.
3. Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads
may occur due to excessive stress applied when dropping of a carton.
4. Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of
which storage time is exceeding the recommended storage time period.
Precaution for Product Label
A two-dimensional barcode printed on ROHM Products label is for ROHM’s internal use only.
Precaution for Disposition
When disposing Products please dispose them properly using an authorized industry waste company.
Precaution for Foreign Exchange and Foreign Trade act
Since concerned goods might be fallen under listed items of export control prescribed by Foreign exchange and Foreign
trade act, please consult with ROHM in case of export.
Precaution Regarding Intellectual Property Rights
1. All information and data including but not limited to application example contained in this document is for reference
only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any
other rights of any third party regarding such information or data.
2. ROHM shall not have any obligations where the claims, actions or demands arising from the combination of the
Products with other articles such as components, circuits, systems or external equipment (including software).
3. No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any
third parties with respect to the Products or the information contained in this document. Provided, however, that ROHM
will not assert its intellectual property rights or other rights against you or your customers to the extent necessary to
manufacture or sell products containing the Products, subject to the terms and conditions herein.
Other Precaution
1. This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM.
2. The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written
consent of ROHM.
3. In no event shall you use in any way whatsoever the Products and the related technical information contained in the
Products or this document for any military purposes, including but not limited to, the development of mass-destruction
weapons.
4. The proper names of companies or products described in this document are trademarks or registered trademarks of
ROHM, its affiliated companies or third parties.
Notice-PGA-E
Rev.004
© 2015 ROHM Co., Ltd. All rights reserved.
Daattaasshheeeett
General Precaution
1. Before you use our Products, you are requested to carefully read this document and fully understand its contents.
ROHM shall not be in any way responsible or liable for failure, malfunction or accident arising from the use of any
ROHM’s Products against warning, caution or note contained in this document.
2. All information contained in this document is current as of the issuing date and subject to change without any prior
notice. Before purchasing or using ROHM’s Products, please confirm the latest information with a ROHM sales
representative.
3. The information contained in this document is provided on an “as is” basis and ROHM does not warrant that all
information contained in this document is accurate and/or error-free. ROHM shall not be in any way responsible or
liable for any damages, expenses or losses incurred by you or third parties resulting from inaccuracy or errors of or
concerning such information.
Notice – WE
Rev.001
© 2015 ROHM Co., Ltd. All rights reserved.
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