BR25H040FVT-WE2 [ROHM]
EEPROM, 512X8, Serial, CMOS, PDSO8, LEAD FREE, TSSOP-8;型号: | BR25H040FVT-WE2 |
厂家: | ROHM |
描述: | EEPROM, 512X8, Serial, CMOS, PDSO8, LEAD FREE, TSSOP-8 可编程只读存储器 电动程控只读存储器 电可擦编程只读存储器 时钟 光电二极管 内存集成电路 |
文件: | 总17页 (文件大小:1138K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
TECHNICAL NOTE
HIGH GRADE Specification HIGH RELIABILITY series
SPI BUS Serial EEPROMs
Supply voltage 1.8V~5.5V
Operating temperature –40°C~+85°C type
BR25L010-W, BR25L020-W, BR25L040-W, BR25L080-W, BR25L160-W, BR25L320-W, BR25L640-W
Description
●
BR25L-W series is a serial EEPROM of SPI BUS interface method.
Features
y High speed clock action up to 5MHz (Max.)
y Wait function by HOLD terminal
y Part or whole of memory arrays settable as read only memory area by program
y 1.8 ~ 5.5V single power source action most suitable for battery use
y Page write mode useful for initial value write at factory shipment
y Highly reliable connection by Au pad and Au wire
y For SPI bus interface (CPOL, CPHA) = (0, 0), (1, 1)
y Auto erase and auto end function at data rewrite
y Low current consumption
At write action (5V)
At read action (5V)
At standby action (5V) : 0.1µA (Typ.)
: 1.5mA (Typ.)
: 1.0mA (Typ.)
Page write
Number of
pages
y Address auto increment function at read action
y Write mistake prevention function
16 Byte
32 Byte
BR25L080-W
BR25L160-W
BR25L320-W
BR25L640-W
Write prohibition at power on
Write prohibition by command code (WRDI)
Write prohibition by WP pin
BR25L010-W
BR25L020-W
BR25L040-W
Product
number
Write prohibition block setting by status registers (BP1, BP0)
Write mistake prevention function at low voltage
y SOP8, SOP-J8, SSOP-B8, TSSOP-B8, MSOP8 TSSOP-B8J package *1 *2
y DataꢀatꢀshipmentꢀꢀMemoryꢀarrayꢀ:ꢀFFh,ꢀstatusꢀregisterꢀWPEN,ꢀBP1,ꢀBP0ꢀ:ꢀ0
y Data kept for 40 years
y Data rewrite up to 1,000,000 times
*1 BR25L080/160-W : SOP8, SOP-J8, SSOP-B8, TSSOP-B8
*2 BR25L320/640-W : SOP8, SOP-J8
BR25L series
Power source
Capacity
1Kbit
Bit format
128 × 8
256 × 8
512 × 8
1K × 8
Type
SOP8
SOP-J8
SSOP-B8
TSSOP-B8
MSOP8
TSSOP-B8J
voltage
BR25L010-W
BR25L020-W
BR25L040-W
BR25L080-W
1.8 ~ 5.5V
2Kbit
1.8 ~ 5.5V
1.8 ~ 5.5V
1.8 ~ 5.5V
4Kbit
8Kbit
16Kbit
32Kbit
64Kbit
2K × 8
4K × 8
8K × 8
BR25L160-W
BR25L320-W
BR25L640-W
1.8 ~ 5.5V
1.8 ~ 5.5V
1.8 ~ 5.5V
Ver.B Oct.2005
Recommended action conditions
Absolute maximum ratings (Ta = 25˚C)
Parameter
Power source voltage
Input voltage
Symbol
VCC
Limits
1.8 ~ 5.5
0 ~ VCC
Unit
V
Parameter
Symbol
VCC
Unit
V
Limits
Impressed voltage
-
0.3 ~ +6.5
*1
Vin
450(SOP8)
*2
*3
*4
*5
450(SOP-J8)
300(SSOP-B8)
Memory cell characteristics (Ta=25˚C, VCC=1.8 ~ 5.5V)
mW
Permissible
dissipation
Limits
Pd
Parameter
Unit
Min.
1,000,000
40
Typ.
–
–
Max.
330(TSSOP-B8
)
*1
*1
Number of data rewrite times
–
–
Times
Years
310(MSOP8)
Data hold years
310(TSSOP-B8J) *6
*1:Not 100% TESTED
Storage
temperature range
Operating
temperature range
˚C
˚C
V
Tstg
Topr
–
-
-
-
65 ~ +125
Input / output capacity (Ta=25˚C, frequency=5MHz)
40 ~ +85
Terminal voltage
0.3 ~ VCC+0.3
Parameter
Input capacity
Output capacity
Symbol Conditions
Min.
–
–
Max.
Unit
*1
*1
CIN
VIN=GND
8
8
pF
pF
yWhen using at Ta = 25˚C or higher, 4.5mW (*1, *2), 3.0mW (*3),
3.3mW(*4), 3.1mW (*5, *6) to be reduced per 1˚C
COUT
VOUT=GND
*1:Not 100% TESTED
Electrical characteristics (Unless otherwise specified, Ta = –40 ~ +85˚C, VCC = 1.8 ~ 5.5V)
Limits
Typ.
Parameter
"H" input voltage 1
"L" input voltage 1
Symbol
VIH1
Unit
V
Conditions
Min.
Max.
0.7x
VCC
VCC
+0.3
–
1.8≤VCC≤5.5V
1.8≤VCC≤5.5V
0.3x
VCC
VIL1
-0.3
–
V
=
=
IOL 2.1mA(VCC 2.5V ~ 5.5V)
"L" output voltage 1
"L" output voltage 2
VOL1
VOL2
0
0
–
–
0.4
0.2
V
V
=
=
IOL 150µA(VCC 1.8V ~ 2.5V)
VCC
=
=
VCC
VCC
V
V
"H" output voltage 1
"H" output voltage 2
VOH1
VOH2
IOH
IOH
-
0.4mA(VCC 2.5V ~ 5.5V)
–
–
-0.5
VCC
=
=
-
100µA(VCC 1.8V ~ 2.5V)
-0.2
ILI
-
1
µA
µA
Input leak current
1
1
=
–
–
VIN 0 ~ VCC
Output leak current
ILO
-1
=
=
VOUT 0 ~ VCC,CS VCC
=
=
=
VCC 1.8V,fSCK 2MHz,tE/W 5ms
Byte write
Page write
Write status register
1.0
2.0
mA
mA
ICC1
ICC2
–
–
–
=
=
=
VCC 2.5V,fSCK 5MHz,tE/W 5ms
Byte write
Page write
Current consumption at write
action
–
Write status register
=
=
=
VCC 5.5V,fSCK 5MHz,tE/W 5ms
Byte write
Page write
Write status register
–
–
3.0
1.5
mA
mA
ICC3
ICC4
–
–
=
=
VCC 2.5V,fSCK 5MHz
Read
Read status register
Current consumption at read
action
=
=
VCC 5.5V,fSCK 5MHz
Read
Read status register
–
–
2.0
2
–
–
mA
ICC5
ISB
=
CC 5.5V
V
µA
Standby current
=
=
=
=
=
=
CS HOLD WP VCC,SCK SI VCC or GND,SO=OPEN
• Radiation resistance design is not made.
Block diagram
VOLTAGE
DETECTION
INSTRUCTION DECODE
CONTROL CLOCK
GENERATION
CS
WRITE
HIGH VOLTAGE
GENERATOR
SCK
INHIBITION
INSTRUCTION
REGISTER
SI
STATUS REGISTER
ADDRESS
REGISTER
ADDRESS
DECODER
*1 7bit : BR25L010-W
8bit : BR25L020-W
9bit : BR25L040-W
10bit : BR25L080-W
11bit : BR25L160-W
12bit : BR25L320-W
13bit : BR25L640-W
7~13bit *1
8bit
HOLD
7~13bit *1
8bit
1K~64K
EEPROM
WP
SO
READ/WRITE
AMP
DATA
REGISTER
Fig.1 Block diagram
2/16
Pin assignment and description
Terminal name Input/output
Function
Power source to be connected
VCC
–
VCC
HOLD SCK
SI
GND
CS
SCK
SI
–
Input
All input / output reference voltage, 0V
Chip select input
BR25L010-W
BR25L020-W
BR25L040-W
BR25L080-W
BR25L160-W
BR25L320-W
BR25L640-W
Input
Input
Serial clock input
Start bit, ope code, address, and serial data input
SO
Output Serial data output
Hold input
Input
HOLD
Command communications may be suspended temporarily (HOLD status).
Write protect input
Write command is prohibited.*1
Write status register command is prohibited.
WP
Input
CS
SO
WP
GND
Fig. 2 Pin assignment diagram
*1:BR25L010/020/040-W
Sync data input / output timing
Operating timing characteristics
(Ta = -40 ~ +85˚C, unless otherwise specified, load capacity CL1 100pF)
tCS
tCSS
1.8≤VCC<2.5V
2.5≤VCC<5.5V
CS
Parameter
Symbol
Unit
tSCKS
Min. Typ. Max. Min. Typ. Max.
tRC
tFC
tSCKWL
tSCKWH
SCK frequency
SCK high time
SCK low time
CS high time
fSCK
–
–
–
–
–
–
–
–
–
–
–
–
2
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
5
–
–
–
–
–
–
–
–
MHz
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
SCK
tDIS tDIH
tSCKWH 200
tSCKWL 200
85
85
85
90
85
90
90
20
40
–
SI
tCS
tCSS
tCSH
tSCKS
tSCKH
tDIS
200
200
200
200
200
40
High-Z
SO
CS setup time
CS hold time
Fig. 3 Input timing
SI is taken into IC inside in sync with data rise edge of SCK. Input
address and data from the most significant bit MSB.
SCK setup time
SCK hold time
SI setup time
SI hold time
tCS
tDIH
50
–
150
–
70
CS
tSCKH
tCSH
Data output delay time 1
tPD1
–
Data output delay time 2
(CL2=30pF)
SCK
SI
tPD2
–
–
145
–
–
55
ns
Output hold time
tOH
tOZ
0
–
–
–
–
250
0
–
–
–
–
100
ns
ns
tPD
tOZ
tRO,tFO
tOH
High-Z
Output disable time
SO
HOLD setting
setup time
tHFS
tHFH
tHRS
tHRH
tHOZ
tHPD
tRC
120
90
120
140
–
–
–
–
–
–
–
–
–
–
–
–
60
40
60
70
–
–
–
–
–
–
–
–
–
–
–
–
ns
ns
ns
ns
ns
ns
µs
µs
ns
Fig. 4 Input / output timing
HOLD setting
hold time
SO is output in sync with data fall edge of SCK. Data is output
from the most significant bit MSB.
HOLD release
setup time
"H"
–
–
CS
"L"
tHFS tHFH
tHRS tHRH
HOLD release
hold time
–
–
SCK
SI
tDIS
Time from HOLD
to output High-Z
n+1
n
n-1
250
150
1
100
70
1
tHOZ
Dn
tHPD
Dn
High-Z
SO
Dn+1
Dn-1
Time from HOLD
to output change
–
–
HOLD
*1
SCK
rise time
–
–
Fig. 5 HOLD timing
*1
SCK
fall time
tFC
–
1
–
1
*1
OUTPUT
rise time
tRO
–
100
–
50
*1
OUTPUT
fall time
tFO
–
–
–
–
100
5
–
–
–
–
50
5
ns
Write time
tE/W
ms
*1NOT 100% TESTED
AC measurement conditions
Parameter
Limits
Symbol
Unit
Min. Typ. Max.
Load capacity 1
Load capacity 2
Input rise time
CL1
CL2
–
–
–
–
–
–
–
–
–
–
–
100
30
pF
pF
ns
ns
V
50
Input fall time
50
Input voltage
0.2VCC/0.8VCC
0.3VCC/0.7VCC
Input / output judgment voltage
–
V
3/16
Characteristic data (The following characteristic data are Typ. values.)
6
5
4
3
2
1
0
6
5
4
3
2
1
0
1
0.8
0.6
0.4
0.2
0
Ta=85˚C
Ta=25˚C
Ta=85˚C
Ta=25˚C
SPEC
Ta=-40˚C
SPEC
Ta=85˚C
Ta=25˚C
Ta=
3
-
40˚C
SPEC
4
Ta=-40˚C
0
1
2
4
5
6
0
1
2
3
5
6
0
1
2
3
4
5
6
VCC[V]
IOL[mA]
VCC[V]
Fig.6 "H" input voltage VIH(CS,SCK,SI,HOLD,WP)
Fig.7 "L" input voltage VIL(CS,SCK,SI,HOLD,WP)
Fig.8 "L" output voltage VOL-IOL(VCC=1.8V)
2.6
2.4
2.2
2
2
1
Ta=-40˚C
Ta=-40˚C
0.8
1.8
1.6
1.4
1.2
0.6
0.4
0.2
0
Ta=25˚C
Ta=85˚C
Ta=25˚C
Ta=85˚C
SPEC
Ta=85˚C
Ta=25˚C
SPEC
SPEC
Ta=
4
-40˚C
1.8
0
1
2
3
5
0
0.4
IOH[mA]
0.8
0
0.4
IOH[mA]
0.8
IOL[mA]
Fig.9 "H" output voltage VOH-IOH(VCC=1.8V)
Fig.10 "L" output voltage VOL-IOL(VCC=2.5V)
Fig.11 "H" output voltage VOH-IOH(VCC=2.5V)
V
V
CC=2.5V 2mA
CC=5.5V 3mA
1.2
1
1.2
1
4
3
2
1
0
SPEC
SPEC
fSCK=5MHz
DATA=55h
SPEC
0.8
0.8
0.4
0.2
0
0.8
0.6
0.4
0.2
0
SPEC
Ta=25˚C
Ta=-40˚C
Ta=85˚C
Ta=25˚C
Ta=85˚C
Ta=25˚C
Ta=
-
40˚C
Ta=
-
40˚C
Ta=85˚C
0
1
2
3
4
5
6
0
1
2
3
4
5
6
0
1
2
3
4
5
6
VCC[V]
VCC[V]
VCC[V]
Fig.12 Input leak current ILI(CS,SCK,SI,WP,HOLD)
Fig.13 Output leak current ILO(SO)
Fig.14 Current consumption at WRITE operation
ICC1,2,3(WRITE,PAGE WRITE,WRSR,fSCK=5MHz)
BR25L010-W,BR25L020-W,BR25L040-W
Vcc=2.5V 1.5mA
Vcc=5.5V 2.0mA
2.5
2.5
2
100
Ta=25˚C
fSCK=5MHz
Ta=-
40˚C
SPEC
SPEC
DATA=55h
2
SPEC
Ta=85˚C
10
1
Ta=
-40˚C
1.5
1
1.5
1
Ta=25˚C
SPEC
SPEC
Ta=85˚C
Ta=25˚C
Ta= 40˚C
Ta=85˚C
0.5
0
0.5
0
-
0.1
0
1
2
3
4
5
6
0
1
2
3
4
5
6
0
1
2
3
4
5
6
VCC[V]
VCC[V]
VCC[V]
Fig.15 Consumption current at READ operation
ICC4,5(READ,WRSR,fSK=5MHz)
Fig.16 Consumption current at standby operation ISB
Fig.17 SCK frequency fSCK
250
250
250
200
150
100
50
SPEC
SPEC
SPEC
200
150
100
50
200
150
SPEC
SPEC
100
SPEC
Ta=-40˚C
Ta=25˚C
Ta=85˚C
Ta=-40˚C
Ta=85˚C
Ta=25˚C
Ta=
-
40˚C
50
0
Ta=25˚C
Ta=85˚C
0
0
0
1
2
3
4
5
6
0
1
2
3
4
5
6
0
1
2
3
4
5
6
VCC[V]
VCC[V]
VCC[V]
Fig.18 tSCK high time tSCKWH
Fig.19 SCK low time tSCKWL
Fig.20 CS high time tCS
4/16
250
200
150
100
50
60
40
20
0
250
200
150
100
50
SPEC
SPEC
SPEC
SPEC
SPEC
SPEC
Ta=25˚C
Ta=85˚C
Ta=85˚C
Ta=85˚C
Ta=25˚C
Ta=-40˚C
-20
-40
Ta=
-
40˚C
0
Ta=-40˚C Ta=25˚C
-
50
0
0
1
2
3
4
5
6
0
1
2
3
4
5
6
0
0
0
0
1
2
3
4
5
6
6
6
6
[ ]
VCC V
[ ]
CC V
V
[ ]
CC V
V
CS setup time
Fig.22 CS hold time tCSH
SI setup time
Fig.23 tDIS
Fig.21
tCSS
200
150
100
50
200
150
100
50
60
50
SPEC
SPEC
SPEC
SPEC
40
30
20
Ta=85˚C
Ta=85˚C
SPEC
Ta=85˚C
Ta=-40˚C
SPEC
Ta=
-
40˚C
10
0
Ta=25˚C
Ta=25˚C
Ta=25˚C
Ta=
-
40˚C
0
0
2
3
0
1
2
3
[
4
5
6
1
2
3
[ ]
CC V
4
5
0
1
4
5
6
[
V
]
]
V
V
CC
V
CC
V
=
=
Fig.24 SI hold time tDIH
Fig.25 Data output delay time tPD1(CL 100pF)
Fig.26 Data output delay time tPD2(CL 30pF)
150
120
90
60
30
0
300
250
200
150
100
50
140
120
100
80
SPEC
SPEC
SPEC
SPEC
60
SPEC
SPEC
40
Ta=85˚C
Ta=85˚C
20
Ta=85˚C
Ta=25˚C
Ta=
-40˚C
Ta=25˚C
Ta=25˚C
0
Ta=
-
40˚C
Ta=-40˚C
-20
-30
0
1
2
3
4
5
0
1
2
3
4
5
6
0
1
2
3
4
5
6
[
CC V
]
[ ]
V
V
V
CC
VCC[V]
Fig.27 Output disable time tOZ
Fig.28 HOLD setting hold time tHFH
Fig.29 HOLD release hold time tHRH
160
120
80
40
0
120
90
60
30
0
300
250
200
SPEC
SPEC
SPEC
SPEC
150
100
50
SPEC
SPEC
Ta=85˚C
Ta=25˚C
Ta=85˚C
Ta=25˚C
Ta=85˚C
Ta=25˚C
Ta=-40˚C
Ta=
1
-40˚C
Ta=-40˚C
-40
0
1
2
3
4
5
0
1
2
3
4
5
6
0
2
3
4
5
6
[
]
[ ]
VCC V
VCC V
[ ]
CC V
V
Fig.30 Time from HOLD to output High-Z tHOZ
Fig.31 Time from HOLD to output change tHPD
Fig.32 Output rise time tRO
10
8
120
SPEC
90
60
30
0
6
SPEC
SPEC
Ta=-40˚C
4
Ta=85˚C
Ta=25˚C
Ta=25˚C
Ta=85˚C
2
Ta=
-40˚C
0
0
1
2
3
4
5
6
0
1
2
3
4
5
6
[ ]
V
[ ]
VCC V
V
CC
Fig.33 Output fall time
Fig.34 Write cycle time tE/W
5/16
Features
Status registers
This IC has status registers. The status registers are of 8 bits and express the following parameters.
BP0 and BP1 can be set by write status register command. These 2 bits are memorized into the EEPROM, therefore are
valid even when power source is turned off.
Rewrite characteristics and data hold time are same as characteristics of the EEPROM.
WEN can be set by write enable command and write disable command. WEN becomes write disable status when power
source is turned off. R/B is for write confirmation, therefore cannot be set externally.
The value of status register can be read by read status command.
Status registers
Product number
BR25L010-W
BR25L020-W
BR25L040-W
BR25L080-W
BR25L160-W
BR25L320-W
BR25L640-W
bit 7
1
bit 6
1
bit 5
1
bit 4
1
bit 3
BP1
bit 2
BP0
bit 1
bit 0
-
WEN
R/B
-
WPEN
0
0
0
BP1
BP0
WEN
R/B
Memory
location
bit
Function
Contents
WP pin enable / disable designation bit
This enables / disables the functions
of WP pin.
WPEN EEPROM
WPEN = 0 = invalid
WPEN = 1 = valid
This designates the write disable area
of EEPROM. Write designation areas
of product numbers are shown below.
BP1
EEPROM
BP0
EEPROM write disable block designation bit
Write and write status register write enable / disable status confirmation bit
WEN
Register
Register
WEN = 0 = prohibited
WEN = 1 = permitted
Write cycle status (READY / BUSY) status confirmation bit
-
-
R/B
= =
= =
R/B 0 READY
-
R/B 1 BUSY
Write disable block setting
Write disable block
BR25L010-W BR25L020-W BR25L040-W BR25L080-W BR25L160-W BR25L320-W BR25L640-W
BP1
BP0
0
0
1
1
0
1
0
1
None
None
None
None
None
None
None
60h-7Fh
40h-7Fh
00h-7Fh
C0h-FFh
80h-FFh
00h-FFh
180h-1FFh
100h-1FFh
000h-1FFh
300h-3FFh
200h-3FFh
000h-3FFh
600h-7FFh
400h-7FFh
000h-7FFh
C00h-FFFh
800h-FFFh
000h-FFFh
1800h-1FFFh
1000h-1FFFh
0000h-1FFFh
WP pin
By setting WP = LOW, write command is prohibited. As for BR25L080, 160, 320, 640-W, only when WPEN bit is set "1",
the WP pin functions become valid. And the write command to be disabled at this moment is WRSR. As for BR25L010,
020, 040-W, both WRITE and WRSR commands are prohibited.
However, when write cycle is in execution, no interruption can be made.
Product number
BR25L010-W
BR25L020-W
BR25L040-W
BR25L080-W
BR25L160-W
BR25L320-W
BR25L640-W
WRSR
WRITE
Prohibition
possible
Prohibition
possible
Prohibition
possible but
WPEN bit "1"
Prohibition
impossible
HOLD pin
By HOLD pin, data transfer can be interrupted. When SCK = "1", by making HOLD from "1" into "0", data transfer to
EEPROM is interrupted. When SCK = "0", by making HOLD from "0" into "1", data transfer is restarted.
6/16
Command mode
Ope code
BR25L080-W
BR25L160-W
BR25L320-W
BR25L640-W
Command
Contents
BR25L010-W
BR25L020-W
BR25L040-W
WREN Write enable
WRDI Write disable
READ Read
Write enable command 0000 * 110
0000
* 110 0000 0110
Write disable command 0000 * 100 0000 * 100 0000 0100
Read command
Write command
0000 * 011 0000 A8011 0000 0011
0000 * 010 0000 A8010 0000 0010
WRITE Write
Status register read
command
RDSR
Read status register
0000 * 101 0000 * 101 0000 0101
0000 * 001 0000 * 001 0000 0001
Status register write
command
WRSR Write status register
Timing chart
1. Write enable (WREN) / disable (WRDI) cycle
1.WREN (WRITE ENABLE) : Write enable
CS
SCK
0
1
2
3
4
5
6
1
7
0
SI
0
0
0
0
* 1
1
High-Z
SO
Don't care
*1 BR25L010/020/040-W=
BR25L080/160/320/640-W=
Fig. 35 Write enable command
“0” input
1.WRDI (WRITE DISABLE) : Write disable
CS
SCK
SI
0
1
2
3
4
5
6
7
0
0
0
0
* 1
1
0
0
High-Z
SO
Don't care
-W=
*1 BR25L010/020/040
BR25L080/160/320/640
Fig. 36 Write disable
“0” input
-W=
This IC has write enable status and write disable status. It is set to write enable status by write enable command, and it is
set to write disable status by write disable command. As for these commands, set CS LOW, and then input the respective
ope codes. The respective commands accept command at the 7-th clock rise. Even with input over 7 clocks, command
becomes valid.
When to carry out write and write status register command, it is necessary to set write enable status by the write enable
command. If write or write status register command is input in the write disable status, commands are cancelled. And even
in the write enable status, once write and write status register command is executed once, it gets in the write disable
status. After power on, this IC is in write disable status.
7/16
2. Read command (READ)
CS
Product
number
Address
length
0
1
2
3
4
5
6
7
8
9
10
11
14
15
16
17
22
SCK
A6-A0
A7-A0
A8-A0
BR25L010-W
BR25L020-W
BR25L040-W
* 1
A5
A4
A1
A0
0
0
0
0
0
A7
A6
1
1
SI
High-Z
D7 D6
D2
D1
D0
SO
=
* 1 BR25L010/020-W Don't care
Fig. 37 Read command (BR25L010/020/040-W)
=
BR25L040-W A8
CS
Product
number
Address
length
0
1
2
3
4
5
6
7
8
23
24
30
SCK
A9-A0
A10-A0
A11-A0
A12-A0
BR25L080-W
BR25L160-W
BR25L320-W
BR25L640-W
A12
0
0
0
0
0
0
1
1
A1
SI
A0
*
*
*
High-Z
SO
D7
D6
D2
D1
D0
* =
Don't care
Fig. 38 Read command (BR25L080/160/320/640-W)
By read command, data of EEPROM can be read. As for this command, set CS LOW, then input address after read ope
code. EEPROM starts data output of the designated address. Data output is started from SCK fall of 15/23*1 clock, and
from D7 to D0 sequentially. This IC has increment read function. After output of data for 1 byte (8 bits), by continuing input
of SCK, data of the next address can be read. Increment read can read all the addresses of EEPROM. After reading data
of the most significant address, by continuing increment read, data of the most insignificant address is read.
=
* 1 BR25L010/020/040-W 15 clocks
* =
Don't care
=
BR25L080/160/320/640-W 23 clocks
3. Write command (WRITE)
Product
number
Address
length
CS
0
1
2
3
4
5
6
7
8
15
16
22 23
SCK
A6-A0
A7-A0
A8-A0
BR25L010-W
BR25L020-W
BR25L040-W
A7 A6 A5 A4
A1
A0 D7 D6
D2 D1 D0
0
0
0
0
0
1
0
* 1
SI
High-Z
SO
=
* 1 BR25L010/020-W Don't care
Fig.39 Write command (BR25L010/020/040-W)
=
BR25L040-W A8
CS
Product
number
Address
length
0
1
2
3
4
5
6
7
8
23
24
30
31
SCK
A9-A0
A10-A0
A11-A0
A12-A0
BR25L080-W
BR25L160-W
BR25L320-W
BR25L640-W
A12
A1
A0 D7 D6
D2 D1 D0
0
0
0
0
0
0
1
0
*
*
*
SI
High-Z
SO
* =
Don't care
Fig.40 Write command (BR25L080/160/320/640-W)
By write command, data of EEPROM can be written. As for this command, set CS LOW, then input address and data
after write ope code. Then, by making CS HIGH, the EEPROM starts writing. The write time of EEPROM requires time of
tE/W (Max 5ms). During tE/W, other than status read command is not accepted. Start CS after taking the last data (D0),
and before the next SCL clock starts. At other timing, write command is not executed, and this write command is
cancelled. This IC has page write function, and after input of data for 1 byte (8 bits), by continuing data input without
starting CS, data up to 16/32*1 bytes can be written for one tE/W. In page write, the insignificant 4/5*2 bit of the
designated address is incremented internally at every time when data of 1 byte is input, and data is written to respective
addresses. When data of the maximum bytes or higher is input, address rolls over, and previously input data is
overwritten.
=
* 1 BR25L010/020/040-W 16 bytes at maximum
=
BR25L080/160/320/640-W 32 bytes at maximum
=
* 2 BR25L010/020/040-W Insignificant 4 bits
=
BR25L080/160/320/640-W Insignificant 5 bits
8/16
4. Status register write / read command
CS
0
1
2
3
4
5
6
7
8
9
10
11
12 13
14
15
SCK
bit7
bit6
bit5
bit4
bit3 bit2
bit1
bit0
0
0
0
0
*
0
0
1
BP1 BP0
SI
*
*
*
*
*
*
-
High Z
SO
* =
Don't care
Fig.41 Status register write command (BR25L010/020/040-W)
CS
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
SCK
bit7
bit6 bit5
bit4
bit3
bit2
bit1
bit0
WPEN
0
0
0
0
0
0
0
1
BP1 BP0
SI
*
*
*
*
*
-
High Z
SO
* =
Don't care
Fig.42 Status register write command (BR25L080/160/320/640-W)
Write status register command can write status register data. The data the can be written by this command are 2 bits *1,
that is, BP1 (bit3) and BP0 (bit2) among 8 bits of status register. By BP1 and BP0, write disable block of EEPROM can be
set. As for this command, set CS LOW, and input ope code of write status register, and input data. Then, by making CS
HIGH, EEPROM starts writing. Write time requires time of tE/W as same as write. As for CS rise, start CS after taking the
last data bit (bit0), and before the next SCK clock starts. At other timing, command is cancelled. Write disable block is
determined by BP1 and BP0, and the block can be selected from 1/4 of memory array, 1/2, and entire memory array.
(Refer to the write disable block setting table.) To the write disabled block, write cannot be made, and only read can be
made.
* 3 bits including BR25L080, 160, 320, 640-W WPEN (bit7)
CS
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
SCK
SI
0
0
0
0
1
0
1
*
bit7
bit6
bit5
bit4
bit3
bit2
bit1
bit0
-
High Z
1
1
1
1
BP1 BP0 WEN R/B
SO
* =
Don't care
Fig.43 Status register read command (BR25L010/020/040-W)
CS
SCK
SI
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
0
0
0
0
0
1
0
1
bit7
WPEN
bit6
bit5
bit4
bit3
bit2
bit1
bit0
-
High Z
SO
0
0
0
BP1 BP0 WEN R/B
Fig.44 Status register read command (BR25L080/160/320/640-W)
9/16
At standby
Current at standby
Set CS "H", and be sure to set SCK, SI, WP, HOLD input "L" or "H". Do not input intermediate electric potential.
Timing
As shown in Fig. 45, at standby, when SCK is "H", even if CS is fallen, SI status is not read at fall edge. SI status is read
at SCK rise edge after fall of CS. At standby and at power ON/OFF, set CS "H" status.
Even if CS is fallen at SCL = SI = "H",
SI status is not read at that edge.
CS
Command start here. SI is read.
SCK
SI
0
1
2
Fig.45 Operating timing
WP cancel valid area
WP is normally fixed to "H" or "L" for use, but when WP is controlled so as to cancel write status register command and write
command, pay attention to the following WP valid timing.
While write or write status register command is executed, by setting WP = "L" in cancel valid area, command can be
cancelled. The area from command ope code before CS rise at internal automatic write start becomes the cancel valid area.
However, once write is started, any input cannot be cancelled. WP input becomes Don't Care, and cancellation becomes
invalid.
SCK
CS
15
16
tE/W
data write time
Ope code
Data
WP cancel invalid area WP cancel invalid area
invalid
WP cancel invalid area
Fig.46 WP valid timing (WRSR)
tE/W
data write time
Ope code
Address
Data
WP cancel invalid area
invalid
WP cancel invalid area
valid
WP cancel invalid area
Fig.47 WP valid timing (WRITE)
HOLD pin
By HOLD pin, command communication can be stopped temporarily. (HOLD status) The HOLD pin carries out command
communications normally when it is HIGH. To get in HOLD status, at command communication, when SCK = LOW, set
the HOLD pin LOW. At HOLD status, SCK and SI become Don't Care, and SO becomes high impedance (High-Z). To
release the HOLD status, set the HOLD pin HIGH when SCK = LOW. After that, communication can be restarted from the
point before the HOLD status. For example, when HOLD status is made after A5 address input at read, after release of
HOLD status, by starting A4 address input, read can be restarted. When in HOLD status, leave CS LOW. When it is set
CS = HIGH in HOLD status, the IC is reset, therefore communication after that cannot be restarted.
10/16
Method to cancel each command
READ
Ope code
8 bits
Address
Data
y Method to cancel : cancel by CS = "H"
8 bits /16bits
8 bits
Cancel available in all areas of read mode
Fig.48 READ cancel valid timing
RDSR
Ope code
8 bits
Data
y Method to cancel : cancel by CS = "H"
8 bits
Cancel available in all
areas of read mode
Fig.49 RDSR cancel valid timing
WRITE, PAGE WRITE
a : Ope code, address input area.
Cancellation is available by CS = "H".
b : Data input area (D7 ~ D1 input area)
Cancellation is available by CS = "H".
c : Data input area (D0 area)
Ope code
8 bits
Address
Data (n)
tE/W
d
8 bits
a
8 bits
b
c
Fig.50 WRITE cancel valid timing
When CS is started, write starts.
After CS rise, cancellation cannot be made by any
means.
d : tE/W area
SCK
Cancellation is available by CS = "H". However, when
write starts (CS is started) in the area c, cancellation
cannot be made by any means. And, by inputting on
SCK clock, cancellation cannot be made. In page write
mode, there is write enable area at every 8 clocks.
SI D7
D6
D5
D4
D3
D2
D1
D0
b
c
Note 1) If Vcc is made OFF during write execution, designated address data is not guaranteed, therefore write it once
again.
Note 2) If CS is started at the same timing as that of the SCK rise, write execution / cancel becomes unstable,
therefore, it is recommended to fall in SCK = "L" area. As for SCK rise, assure timing of tCSS / tCSH or higher.
SCK
14
15
16
17
WRSR
a : From ope code to 15 clock rise
Cancel by CS = "H".
SI D1
D0
b : From 15 clock rise to 16 clock rise (write enable area)
When CS is started, write starts.
After CS rise, cancellation cannot be made by any
means.
a
b
c
Ope code
8 bit
Address
8 bit
tE/W
c
c : After 16 clock rise
a
b
Cancel by CS = "H". However, when write starts (CS is
started) in the area b, cancellation cannot be made by
any means. And, by inputting on SCK clock, cancellation
cannot be made.
Fig.51 WRSR cancel valid timing
Note 1) If Vcc is made OFF during write execution, designated address data is not guaranteed, therefore write it once
again.
Note 2) If CS is started at the same timing as that of the SCK rise, write execution / cancel becomes unstable,
therefore, it is recommended to fall in SCK = "L" area. As for SCK rise, assure timing of tCSS/tCSH or higher.
WREN/WRDI
SCK
a : From ope code to clock rise, cancel by CS = "H".
7
8
9
b : Cancellation is not available when CS is started after 7 clock.
a
b
b
Ope code
8 bit
a
Fig.52 WREN / WRDI cancel valid timing
11/16
High speed operation
In order to realize stable high speed operations, pay attention to the following input / output pin conditions.
Input pin pull up, pull down resistance
When to attach pull up, pull down resistance to EEPROM input pin, select an appropriate value for the microcontroller
VOL, IOL from VIL characteristics of this IC.
Pull up resistance
VCC
-VOLM
RPU ≥
IOLM
VOLM ≤
VILE
Microcontroller
IOHM
EEPROM
VOLM
VILE
Example) When Vcc = 5V, VILM = 1.5V, VOLM = 0.4V, IOLM = 2mA,
from the equation
,
"L" output
"L" input
5
-0.4
RPU≥
RPU≥
2 × 10-3
Fig.53 Pull up resistance
2.3[k
]
With the value of Rpu to satisfy the above equation, VOLM
becomes 0.4V or higher, and with VILE (= 1.5V), the equation
is also satisfied.
y VILM : EEPROM VIH specifications
y VOLM : Microcontroller VOL specifications
y IOLM : Microcontroller IOL specifications
And, in order to prevent malfunction, mistake write at power ON/OFF, be sure to make CS pull up.
Pull down resistance
VOHM
IOHM
EEPROM
RPD ≥
VOHM
VIHE
VOHM ≥
VIHE
IOHM
Example) When Vcc = 5V, VOHM = Vcc - 0.5V, IOHM = 0.4mA,
VIHM = Vcc × 0.7V, from the equation
,
Fig.54 Pull down resistance
5
-
0.5
RPD≥
RPD≥
0.4 × 10-3
11.3[k
]
Further, by amplitude VIHE, VILE of signal input to EEPROM, operation speed changes. By inputting signal of amplitude of
VCC / GND level to input, more stable high speed operations can be realized. On the contrary, when amplitude of 0.8VCC /
0.2VCC is input, operation speed becomes slow.
12/16
In order to realize more stable high speed operation, it is recommended to make the values of RPU, RPD as large as
possible, and make the amplitude of signal input to EEPROM close to the amplitude of VCC / GND level.
(*1 At this moment, operating timing guaranteed value is guaranteed.)
tPD-VIL characteristics
80
75
70
65
=
VCC 1.8V
60
55
=
Ta 25°C
=
VIH VCC
=
CL 100pF
0
0.2
0.4
0.6
VIL[V]
0.8
1
Fig.55 VIL dependency of
data output delay time
SO load capacity condition
Load capacity of SO output pin affects upon delay characteristic of SO output. (Data output delay time, time from HOLD
to High-Z) In order to make output delay characteristic into higher speed, make SO load capacity small. In concrete, "Do
not connect many devices to SO bus", "Make the wire between the controller and EEPROM short", and so forth.
tPD-CL characteristics
80
=
=
VCC 1.8V Ta 25°C
=
VIH/VIL 0.8VCC/0.2VCC
EEPROM
70
60
SO
CL
50
40
0
20
40
60
80
100
120
CL [V]
Fig.56 SO load dependency of data output delay time
Other cautions
Make the wire length from the microcontroller to EEPROM input signal same length, in order to prevent setup / hold violation
to EEPROM, owing to difference of wire length of each input.
13/16
Equivalent circuit
Output circuit
SO
OEint.
Fig.57 SO output equivalent circuit
Input circuit
RESETint.
CS
Fig.58 CS input equivalent circuit
SCK
SI
Fig.59 SCK input equivalent circuit
Fig.60 SI input equivalent circuit
HOLD
WP
Fig.61 HOLD input equivalent circuit
Fig.62 WP input equivalent circuit
14/16
Notes on power ON/OFF
At power ON/OFF, set CS "H" (= VCC).
When CS is "L", this IC gets in input accept status (active). If power is turned on in this status, noises and the likes may cause
malfunction, mistake write or so. To prevent these, at power ON, set CS "H". (When CS is in "H" status, all inputs are canceled.)
Vcc
Vcc
GND
Vcc
CS
GND
Bad example
Good example
Fig.63 CS timing at power ON/OFF
(Good example) CS terminal is pulled up to VCC.
At power OFF, take 10ms or higher before re supply. If power is turned on without observing this condition, the IC internal
circuit may not be reset, which please note.
(Bad example)
PORcircuit
CS terminal is "L" at power ON/OFF.
In this case, CS always becomes "L" (active status), and EEPROM may have malfunction, mistake write owing to noises
and the likes.
Even when CS input is High-Z, the status becomes like this case, which please note.
This IC has a POR (Power On Reset) circuit as mistake write countermeasure. After POR action, it gets in write disable status. The POR
circuit is valid only when power is ON, and does not work when power is OFF. When power is ON, if the recommended conditions of the
following tR, tOFF, and Vbot are not satisfied, it may become write enable status owing to noises and the likes.
tR
VCC
Recommended conditions of tR, tOFF, Vbot
tR
tOFF
Vbot
10ms or below 10ms or higher 0.3V or below
100ms or below 10ms or higher 0.2V or below
tOFF
Vbot
0
Fig.64ꢀꢀRiseꢀwaveform
Noise countermeasures
Vcc noise (bypass capacitor)
When noise or surge gets in the power source line, malfunction may occur, therefore, for removing these, it is recommended to attach a
by pass capacitor (0.1µF) between IC Vcc and GND. At that moment, attach it as close to IC as possible.
And, it is also recommended to attach a bypass capacitor between board Vcc and GND.
SCK noise
When the rise time (tR) of SCK is long, and a certain degree or more of noise exists, malfunction may occur owing to clock bit displacement.
To avoid this, a Schmitt trigger circuit is built in SCK input. The hysteresis width of this circuit is set about 0.2V, if noises exist at SCK input,
set the noise amplitude 0.2Vp-p or below. And it is recommended to set the rise time (tR) of SCK 100ns or below. In the case when the rise
time is 100ns or higher, take sufficient noise countermeasures. Make the clock rise, fall time as small as possible.
WP noise
During execution of write status register command, if there exist noises on WP pin, mistake in recognition may occur and forcible cancellation
may result, which please note. To avoid this, a Schmitt trigger circuit is built in WP input. In the same manner, a Schmitt trigger circuit is
built in SI input and HOLD input too.
Cautions on use
(1) Described numeric values and data are design representative values, and the values are not guaranteed.
(2) We believe that application circuit examples are recommendable, however, in actual use, confirm characteristics further sufficiently. In the case
of use by changing the fixed number of external parts, make your decision with sufficient margin in consideration of static characteristics
and transition characteristics and fluctuations of external parts and our LSI.
(3) Absolute maximum ratings
If the absolute maximum ratings such as impressed voltage and operating temperature range and so forth are exceeded, LSI may be destructed.
Do not impress voltage and temperature exceeding the absolute maximum ratings. In the case of fear exceeding the absolute maximum
ratings, take physical safety countermeasures such as fuses, and see to it that conditions exceeding the absolute maximum ratings should
not be impressed to LSI.
(4) GND electric potential
Set the voltage of GND terminal lowest at any action condition. Make sure that each terminal voltage is lower than that of GND terminal.
(5) Heat design
In consideration of permissible dissipation in actual use condition, carry out heat design with sufficient margin.
(6) Terminal to terminal short circuit and wrong packaging
When to package LSI onto a board, pay sufficient attention to LSI direction and displacement. Wrong packaging may destruct LSI. And in
the case of short circuit between LSI terminals and terminals and power source, terminal and GND owing to foreign matter, LSI may be
destructed.
(7) Use in a strong electromagnetic field may cause malfunction, therefore, evaluate design sufficiently.
15/16
Selection of order type
B R
2 5
L
0 1 0
F - W E 2
Double cell
Rohm type BUS type Operating temperature Capacity Package type
Package specifications
name
25:SPI
:
1 K
2 K
4 K
:
010=
020=
040=
080=
160=
320=
640=
L −40℃〜+85℃
F SOP8
E2 : reel shape emboss taping
TR : reel shape emboss taping
(MSOP8 package only)
:
FJ SOP-J8
ꢀ
Hꢀ −40℃〜+125℃
:
FV SSOP-B8
8 K
FVT :TSSOP-B8
16K
32K
64K
:
FVM MSOP8
FVJ : TSSOP-B8J
Package specifications
SOP8/SOP-J8/SSOP-B8/TSSOP-B8/TSSOP-B8J
<External appearance>
<Package specifications>SOP8/SOP-J8/SSOP-B8/TSSOP-B8/TSSOP-B8J
Package type
Emboss taping
• SOP8
• SOP-J8
• SSOP-B8
• TSSOP-B8 • TSSOP-B8J
Package quantity
Package direction
2500pcs
3.0±0.2
3.0±0.1
3.0±0.1
4.9±0.2
5.0±0.2
5
8
8
5
8
5
E2
8
7
6
5
8
5
4
(When the reel is gripped by the left hand, and the tape is pulled
out by the right hand, No.1 pin of the product is at the left top.)
1
4
+0.05
0.145 0.03
1
4
1
4
0.15±0.1
+0.05
0.03
1
2
3
4
0.145
1
0.2±0.1
0.1
+0.1
0.05
0.17
0.1
0.1
0.08 S
+0.05
0.08
+0.05
S
1.27
0.42±0.1
1.27
0.42±0.1
0.245 0.04
0.65
0.22±0.1
(0.52) 0.65
0.32 0.04
0.65
Pulling side
Pin No.1
Reel
* For ordering, specify a number of multiples of the package quantity.
(Unitꢀ:ꢀmm)
MSOP8
<External appearance>
<Package specifications> MSOP8
Package type
Emboss taping
2.9 ± 0.1
3000pcs
Package quantity
Package direction
8
5
TR
(When the reel is gripped by the left hand, and the tape is pulled
out by the right hand, No.1 pin of the product is at the right top.)
1
4
+0.05
0.03
0.145
0.475
+0.05
0.22 0.04
M
0.08
0.65
0.08 S
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
Pin No.1
Pulling side
Reel
(Unitꢀ:ꢀmm)
* For ordering, specify a number of multiples of the package quantity.
The contents described herein are correct as of October, 2005
The contents described herein are subject to change without notice. For updates of the latest information, please contact and confirm with ROHM CO.,LTD.
Any part of this application note must not be duplicated or copied without our permission.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding
upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams and information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any
warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such
infringement, or arising from or connected with or related to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, implied right or license to practice or commercially exploit any intellectual property rights or other
proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer.
The products described herein utilize silicon as the main material.
The products described herein are not designed to be X ray proof.
Published by
Application Engineering Group
Catalog No. 05T824Ae '05.©1020R0O0HMTSU
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level
of reliability and the malfunction of which would directly endanger human life (such as medical
instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers
and other safety devices), please be sure to consult with our sales representative in advance.
It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance
of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow
for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in
order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM
cannot be held responsible for any damages arising from the use of the products under conditions out of the
range of the specifications or due to non-compliance with the NOTES specified in this catalog.
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact your nearest sales office.
THE AMERICAS / EUPOPE / ASIA / JAPAN
ROHM Customer Support System
Contact us : webmaster@ rohm.co.jp
www.rohm.com
TEL : +81-75-311-2121
FAX : +81-75-315-0172
Copyright © 2007 ROHM CO.,LTD.
21, Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan
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