BR25S128FV-WE2_技术文档

Datasheet

Serial EEPROM Series Standard EEPROM

SPI BUS EEPROM

BR25Sxxx-W Series

(32K 64K 128K 256K)

●General Description

BR25Sxxx-W series is a serial EEPROM of SPI BUS interface method

●Features

●Packages W(Typ.) x D(Typ.) x H(Max.)

High speed clock action up to 20MHz (Max.)

Wait function by HOLDB terminal

Part or whole of memory arrays settable as read only

memory area by program

1.7V to 5.5V single power source action most suitable

for battery use

Page write mode useful for initial value write at

factory shipment

TSSOP-B8

3.00mm x 6.40mm x 1.20mm

SOP8

5.00mm x 6.20mm x 1.71mm

Highly reliable connection by Au pad and Au wire

For SPI bus interface (CPOL, CPHA) = (0, 0), (1, 1)

Auto erase and auto end function at data rewrite

Low current consumption

SOP- J8

4.90mm x 6.00mm x 1.65mm

TSSOP-B8J

3.00mm x 4.90mm x 1.10mm

¾

At write action (5V)

At read action (5V)

At standby action (5V) : 0.1μA (Typ.)

:

1.5mA (Typ.)

1.0mA (Typ.)

Address auto increment function at read action

Write mistake prevention function

¾

Write prohibition at power on

Write prohibition by command code (WRDI)

Write prohibition by WP pin

Write prohibition block setting by status registers

(BP1, BP0)

SSOP-B8

3.00mm x 6.40mm x 1.35mm

MSOP8

2.90mm x 4.00mm x 0.90mm

¾

Write mistake prevention function at low voltage

Data kept for 40 years

Data rewrite up to 1,000,000 times

Data at shipment

VSON008X2030

2.00mm x 3.00mm x 0.60mm

Memory array: FFh

Status register: WPEN, BP1, BP0 : 0

●Page write

Page

32Byte

64Byte

BR25S320-W

BR25S640-W

BR25S128-W

BR25S256-W

Part Number

●BR25Sxxx-W Series

Power source

VSON008

X2030

Capacity Bit format

SOP8

SOP-J8 SSOP-B8 TSSOP-B8 MSOP8 TSSOP-B8J

voltage

32Kbit

64Kbit

4K×8

8K×8

1.7V to 5.5V

●

128Kbit

256Kbit

16K×8 1.7V to 5.5V

32K×8 1.7V to 5.5V

○Product structure：Silicon monolithic integrated circuit ○This product is not designed protection against radioactive rays

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Datasheet

BR25Sxxx-W Series (32K 64K 128K 256K)

●Absolute Maximum Ratings (Ta=25℃)

Parameter

Supply Voltage

Symbol

V_CC

Ratings

-0.3 to +6.5

Unit

V

Remarks

450 (SOP8)

When using at Ta=25℃ or higher 4.5mW to be reduced per 1℃.

When using at Ta=25℃ or higher 3.0mW to be reduced per 1℃.

When using at Ta=25℃ or higher 3.3mW to be reduced per 1℃.

When using at Ta=25℃ or higher 3.1mW to be reduced per 1℃.

When using at Ta=25℃ or higher 3.0mW to be reduced per 1℃.

450 (SOP-J8)

300 (SSOP-B8)

330 (TSSOP-B8)

310 (TSSOP-B8J)

310 (MSOP8)

300 (VSON008X2030)

－65 to +125

Power Dissipation

Pd

mW

Storage Temperature

Operating Temperature

Terminal Voltage

Tstg

Topr

‐

℃

V

－40 to +85

-0.3 to Vcc+0.3

●Memory cell characteristics (Ta=25°C , Vcc=1.7V to 5.5V)

Limits

Typ.

Parameter

Unit

Min.

1,000,000

40

Max.

-

Number of data rewrite times *1

Data hold years *1

-

Times

Years

*1 Not 100% TESTED

●Recommended Operating Ratings

Unit

V

Parameter

Power source voltage

Input voltage

Symbol

Vcc

V_IN

Ratings

1.7 to 5.5

0 to Vcc

●Input / output capacity (Ta=25°C, frequency=5MHz)

Parameter

Input capacity *1

Output capacity *1

Symbol

C_IN

C_OUT

Min.

－

Max.

8

Unit

pF

Conditions

V_IN=GND

V_OUT=GND

－

*1

Not 100% TESTED.

●Electrical characteristics (Unless otherwise specified, Ta=-40°C to +85°C, Vcc=1.7V to 5.5V)

Limits

Parameter

Symbol

Unit

Conditions

Min.

0.7xVcc

-0.3

0

Typ.

－

Max.

Vcc+0.3

0.3xVcc

0.4

0.2

Vcc

“H” Input Voltage1

“L” Input Voltage1

VIH1

VIL1

VOL1

VOL2

VOH1 Vcc-0.2

VOH2 Vcc-0.2

ILI

V

1.7≦Vcc≦5.5V

“L” Output Voltage1

“L” Output Voltage2

“H” Output Voltage1

“H” Output Voltage2

Input Leakage Current

Output Leakage Current

IOL=2.1mA, 2.5≦Vcc<5.5V

IOL=1.0mA, 1.7≦Vcc<2.5V

IOH=-0.4mA, 2.5V≦Vcc<5.5V

IOH=-100µA, 1.7≦Vcc<2.5V

Vcc

1

-1

μA V_IN=0 to Vcc

μA V_OUT=0 to Vcc, CSB=Vcc

ILO

1

0.5

1

1.5

2

*1

Vcc=1.8V, fSCK=5MHz, tE/W=5ms

Byte Write, Page Write, Write Status register

Vcc=2.5V, fSCK=10MHz, tE/W=5ms

Byte Write, Page Write, Write Status register

Vcc=5.5V, fSCK=20MHz, tE/W=5ms

Byte Write, Page Write, Write Status register

Vcc=1.8V, fSCK=5MHz, SO=OPEN

Read, Read Status Register

Vcc=2.5V, fSCK=2MHz, SO=OPEN

Read, Read Status Register

Vcc=2.5V, fSCK=5MHz, SO=OPEN

Read, Read Status Register

Vcc=2.5V, fSCK=10MHz, SO=OPEN

Read, Read Status Register

Vcc=5.5V, fSCK=5MHz, SO=OPEN

Read, Read Status Register

ICC1

ICC2

ICC3

ICC4

ICC5

ICC6

ICC7

ICC8

ICC9

ICC10

－

mA

*2

*1

*2

*1

*2

Operating Current Write

mA

3

1

mA

1.5

2

mA

Operating Current Read

mA

2

mA

Vcc=5.5V, fSCK=10MHz, SO=OPEN

Read, Read Status Register

Vcc=5.5V, fSCK=20MHz, SO=OPEN

Read, Read Status Register

4

mA

8

mA

Vcc=5.5V, SO=OPEN

CSB=HOLDB=WP=Vcc, SCK=SI=Vcc or GND

Standby Current

ISB

－

2

μA

*1 BR25S320/640-W

*2 BR25S128/256-W

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Datasheet

BR25Sxxx-W Series (32K 64K 128K 256K)

●Operating timing characteristics (Ta=-40°C to +85°C, unless otherwise specified, load capacity C_L=30pF)

1.7≦Vcc<2.5V 1.8≦Vcc<2.5V 2.5≦Vcc<4.5V 4.5≦Vcc<5.5V

Symbol

Unit

Parameter

Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.

fSCK

-

3

-

80

90

60

50

20

-

5

-

40

30

20

10

-

10

-

20

15

5

-

20 MHz

SCK frequency

tSCKWH 125

tSCKWL 125

-

ns

μs

ns

ms

SCK high time

-

SCK low time

tCS

250

100

-

CSB high time

tCSS

tCSH

-

CSB setup time

-

CSB hold time

tSCKS 100

tSCKH 100

-

SCK setup time

-

SCK hold time

tDIS

tDIH

tPD

30

-

SI setup time

50

-

125

-

5

-

SI hold time

-

80

-

40

-

20

-

Data output delay time

Output hold time

tOH

0

tOZ

-

200

-

80

-

40

-

20

-

Output disable time

HOLDB setting setup time

HOLDB setting hold time

HOLDB release setup time

HOLDB release hold time

Time from HOLDB to output High-Z

tHFS

tHFH

tHRS

tHRH

tHOZ

tHPD

tRC

100

0

100

-

20

0

-

10

0

-

5

-

100

-

0

-

100

-

20

-

10

-

5

-

100

1

80

1

50

5

40

1

40

5

-

20

1

20

5

-

Time from HOLDB to output change

*1

-

SCK rise time

*1

tFC

1

-

SCK fall time

*1

OUTPUT rise time

*1

tRO

100

5

-

tFO

-

OUTPUT fall time

Write time

tE/W

-

*1 NOT 100% TESTED

●AC timing characteristics conditions

Limits

Parameter

Symbol

Unit

Min.

Typ.

Max.

Load capacity

C_L

-

30

50

pF

ns

V

Input rise time

Input fall time

-

Input voltage

-

0.2Vcc/0.8Vcc

0.3Vcc/0.7Vcc

Input / Output judgment voltage

-

V

●Sync data input / output timing

tCS

tCSS

tCS

CSB

SCK

tSCKH

CSB

tSCKS

tCSH

tRC

tFC

tSCKWH

tSCKWL

tDIS

SCK

SI

tDIH

tPD

SI

tRO,tFO

tOZ

tOH

High-Z

SO

High-Z

SO

Figure 2. Input / Output timing

Figure 1. Input timing

SI is taken into IC inside in sync with data rise edge of

SCK. Input address and data from the most significant bit

MSB

SO is output in sync with data fall edge of SCK. Data is

output from the most significant bit MSB.

CSB ^"H"

"L"

tHFS tHFH

tHRS tHRH

SCK

SI

tDIS

n

n+1

n-1

tHOZ

Dn

tHPD

High-Z

SO

Dn+1

Dn

Dn-1

HOLDB

Figure 3. HOLD timing

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Datasheet

BR25Sxxx-W Series (32K 64K 128K 256K)

●Block Diagram

VOLTAGE

DETECTION

1

2

3

4

8

7

6

5

CSB

SO

Vcc

INSTRUCTION DECODE

CONTROL CLOCK

GENERATION

WRITE

INHIBITION

HIGH VOLTAGE

GENERATOR

HOLDB

SCK

INSTRUCTION

REGISTER

STATUS REGISTER

ADDRESS

WP

ADDRESS

DECODER

^*1

to 15bit

12

^*1

12

to 15bit

REGISTER

32to256K

EEPROM

*1 12bit: BR25S320-W

DATA

READ/WRITE

AMP

8bit

13bit: BR25S640-W

14bit: BR25S128-W

15bit: BR25S256-W

REGISTER

GND

SI

●Pin Configuration

(TOP VIEW)

Vcc

HOLDB SCK

SI

BR25S320-W

BR25S640-W

BR25S128-W

BR25S256-W

CSB

SO

GND

WP

●Pin Descriptions

Terminal

name

Input

/Output

Function

Power source to be connected

Vcc

GND

CSB

SCK

SI

-

All input / output reference voltage, 0V

Chip select input

Input

Output

Serial clock input

Start bit, ope code, address, and serial data input

Serial data output

SO

Hold input

HOLDB

WP

Input

Command communications may be suspended

temporarily (HOLD status)

Write protect input

Write command is prohibited

Write status register command is prohibited

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Datasheet

BR25Sxxx-W Series (32K 64K 128K 256K)

●Typical Performance Curves

(The following characteristic data are Typ. Values.)

Figure 4. "H" Input Voltage VIH

(CSB,SCK,SI,HOLDB,WP)

Figure 5. "L" Input Voltage VIL

(CSB,SCK,SI,HOLDB,WP)

Figure 6. "L" Output Voltage VOL1(Vcc=2.5V)

Figure 7. "H" Output Voltage VOH1

(Vcc=2.5V)

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Datasheet

BR25Sxxx-W Series (32K 64K 128K 256K)

●Typical Performance Curves‐Continued

Figure 9. Output Leak Current ILO (SO)

Figure 8. Input Leak Current ILI

(CSB,SCK,SI,HOLDB,WP)

Figure 10. Current consumption at WRITE operation ICC3

(BR25S320/640-W)

Figure 11. Current consumption at WRITE operation ICC3

(BR25S128/256-W)

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Datasheet

BR25Sxxx-W Series (32K 64K 128K 256K)

●Typical Performance Curves‐Continued

Figure 13. Current consumption at standby operation ISB

Figure 12. Current consumption at READ operation ICC10

Figure 14. SCK frequency fSCK

Figure 15. SCK high time tSCKWH

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Datasheet

BR25Sxxx-W Series (32K 64K 128K 256K)

●Typical Performance Curves‐Continued

Figure 16. SCK low time tSCKWL

Figure 17. CSB high time tCS

Figure 19. CSB hold time tCSH

Figure 18. CSB setup time tCSS

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Datasheet

BR25Sxxx-W Series (32K 64K 128K 256K)

●Typical Performance Curves‐Continued

Figure 20. SI setup time tDIS

Figure 21. SI hold time tDIH

Figure 22. Data output delay time tPD

Figure 23. Output disable time tOZ

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Datasheet

BR25Sxxx-W Series (32K 64K 128K 256K)

●Typical Performance Curves‐Continued

Figure 24. HOLDB setting hold time tHFH

Figure 25. HOLDB release hold time tHRH

Figure 26. Time from HOLDB to output High-Z tHOZ

Figure 27. Time from HOLDB to output change tHPD

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Datasheet

BR25Sxxx-W Series (32K 64K 128K 256K)

●Typical Performance Curves‐Continued

Figure 28. Output rise time tRO

Figure 29. Output fall time tFO

Figure 30. Write cycle time tE/W

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Datasheet

BR25Sxxx-W Series (32K 64K 128K 256K)

●Features

○Status registers

This IC has status register. The status register expresses the following parameters of 8 bits.

BP0 and BP1 can be set by write status register command. These 2 bits are memorized into the EEPROM, therefore are

valid even when power source is turned off.

Rewrite characteristics and data hold time are same as characteristics of the EEPROM.

WEN can be set by write enable command and write disable command. WEN becomes write disable status when power

source is turned off. R/B is for write confirmation, therefore cannot be set externally.

The value of status register can be read by read status register command.

1. Contexture of status register

Product number

BR25S320-W

bit 7

bit 6

0

bit 5

0

bit 4

0

bit 3

BP1

bit 2

BP0

bit 1

bit 0

BR25S640-W

BR25S128-W

BR25S256-W

―

WPEN

WEN

R/B

Memory

location

bit

Function

WP pin enable / disable designation bit

WPEN=0=invalid

WPEN

EEPROM

WPEN=1=valid

BP1

BP0

EEPROM

registers

EEPROM write disable block designation bit

Write and write status register write enable / disable status confirmation bit

WEN

WEN=0=prohibited

WEN=1=permitted

Write cycle status (READY / BUSY) status confirmation bit

―

registers

R/B=0=READY

R/B

―

R/B=1=BUSY

2. Write disable block setting

Write disable block

BP1

BP0

BR25S320-W

None

BR25S640-W

None

BR25S128-W

None

BR25S256-W

None

0

1

0

1

0

1

C00h-FFFh

800h-FFFh

000h-FFFh

1800h-1FFFh

1000h-1FFFh

0000h-1FFFh

3000h-3FFFh

2000h-3FFFh

0000h-3FFFh

6000h-7FFFh

4000h-7FFFh

0000h-7FFFh

○WP pin

By setting WP=LOW, write command is prohibited. And the write command to be disabled at this moment is WRSR.

However, when write cycle is in execution, no interruption can be made.

Product number

BR25S320-W

BR25S640-W

BR25S128-W

BR25S256-W

WRSR

WRITE

Prohibition possible

but WPEN bit “1”

Prohibition

impossible

○HOLDB pin

By HOLDB pin, data transfer can be interrupted. When SCK=”0”, by making HOLDB from “1” into”0”, data transfer to

EEPROM is interrupted. When SCK = “0”, by making HOLDB from “0” into “1”, data transfer is restarted.

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Datasheet

BR25Sxxx-W Series (32K 64K 128K 256K)

●Command mode

Command

Contents

Ope code

0000

WREN

WRDI

READ

WRITE

RDSR

WRSR

Write enable command

Write disable command

Read command

Write command

Read status register command

Write status register command

0110

0100

0011

0010

0101

0001

●Timing chart

1. Write enable (WREN) / disable (WRDI) command

WREN (WRITE ENABLE): Write enable

WRDI (WRITE DISABLE): Write disable

CSB

SCK

SI

0

1

2

3

4

5

6

7

SCK

SI

0

1

2

3

4

5

6

7

0

1

0

1

0

High-Z

SO

High-Z

SO

Figure 31. Write enable command

Figure 32. Write disable command

This IC has write enable status and write disable status. It is set to write enable status by write enable command, and it is

set to write disable status by write disable command. As for these commands, set CSB LOW, and then input the

respective ope codes. The respective commands are accepted at the 7-th clock rise. Even with input over 7 clocks,

command becomes valid.

When to carry out write command, it is necessary to set write enable status by the write enable command. If write

command is input in the write disable status, the command is cancelled. And even in the write enable status, once write

command is executed, it gets in the write disable status. After power on, this IC is in write disable status.

2. Read command (READ)

Product

number

Address

length

A11-A0

CSB

SCK

SI

～～

BR25S320-W

BR25S640-W

BR25S128-W

BR25S256-W

10

0

1

2

3

4

5

6

7

8

9

11

23

24

30

31

A12-A0

A13-A0

A14-A0

～～

0

1

*

A14 A13 A12

A1 A0

～～

High-Z

D7 D6

D2 D1 D0

SO

Figure 33. Read command

By read command, data of EEPROM can be read. As for this command, set CSB LOW, then input address after read ope

code. EEPROM starts data output of the designated address. Data output is started from SCK fall of 23-th clock, and

from D7 to D0 sequentially. This IC has increment read function. After output of data for 1 byte (8bits), by continuing input

of SCK, data of the next address can be read. Increment read can read all the addresses of EEPROM. After reading data

of the most significant address, by continuing increment read, data of the most insignificant address is read.

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Datasheet

BR25Sxxx-W Series (32K 64K 128K 256K)

3. Write command (WRITE)

Product

number

Address

length

CSB

SCK

～～

0

1

2

3

4

5

6

7

8

10

11

23

24

30

31

9

BR25S320-W

BR25S640-W

BR25S128-W

BR25S256-W

A11-A0

A12-A0

A13-A0

A14-A0

～～

0

1

0

A14 A13 A12

A1

A0

D7 D6

D2

～～

D1

D0

SI

*

High-Z

～～

SO

＊=Don't Care

Figure 34. Write command

By write command, data of EEPROM can be written. As for this command, set CSB LOW, then input address and data

after write ope code. Then, by making CSB HIGH, the EEPROM starts writing. The write time of EEPROM requires time

of tE/W (Max 5ms). During tE/W, other than read status register command is not accepted. Set CSB HIGH between

taking the last data (D0) and rising the next SCK clock. At the other timing, write command is not executed, and this write

command is cancelled. This IC has page write function, and after input of data for 1 byte (8 bits), by continuing data input

without setting CSB HIGH, 2byte or more data can be written for one tE/W. The maximum number of write bytes is

specified per device of each capacity. Up to 64 arbitrary bytes can be written (in the case of BR25S128/256-W). In page

write, the insignificant 5 bit of the designated address is incremented internally at every time when data of 1 byte is input

and data is written to respective addresses. When data of the maximum bytes or higher is input, address rolls over, and

previously input data is overwritten.

4. Write status register, Read status register command (WRSR/RDSR)

CSB

0

1

2

3

4

5

6

7

8

9

10

11

12

13

14

15

SCK

bit7

WPEN

bit6

bit5

bit4

bit3

bit2

bit1

bit0

0

1

BP1 BP0

SI

*

High-Z

SO

*=Don't care

Figure 35. Write status register

Write status register command can write data of status register. The data can be written by this command are 3 bits, that

is, WPEN(bit7), BP1 (bit3) and BP0 (bit2) among 8 bits of status register. By BP1 and BP0, write disable block of

EEPROM can be set. As for this command, set CSB LOW, and input ope code of write status register, and input data.

Then, by making CSB HIGH, EEPROM starts writing. Write time requires time of tE/W as same as write. As for CSB rise,

set CSB HIGH between taking the last data bit (bit0) and the next SCK clock rising. At the other timing, command is

cancelled. Write disable block is determined by BP1 BP0, and the block can be selected from 1/4 , 1/2, and entire of

memory array (Refer to the write disable block setting table.). To the write disabled block, write cannot be made, and only

read can be made.

CSB

0

1

2

3

4

5

6

7

8

9

10

11

12

13

14

15

SCK

0

1

0

1

SI

bit7

WPEN

bit6

bit5

bit4

bit3

bit2

bit1

WEN

bit0

R/B

High-Z

0

BP1 BP0

SO

Figure 36. Read status register command

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Datasheet

BR25Sxxx-W Series (32K 64K 128K 256K)

●WP cancel valid area

WP is normally fixed to “H” or “L” for use, but when WP is controlled so as to cancel write status register command, pay

attention to the following WP valid timing.

While write status register command is executed, by setting WP = “L” in cancel valid area, command can be cancelled. The

area from command ope code to CSB rise at internal automatic write start becomes the cancel valid area. However, once

write is started, by any input write cycle cannot be cancelled. WP input becomes Don’t Care, and cancellation becomes

invalid.

SCK

6

7

15

16

tE/W

Ope Code

Data

Data write time

Valid

(WRSR command is reset by WPB=L)

Invalid

Figure 37. WP valid timing (At inputting WRSR command)

●HOLDB pin

By HOLDB pin, command communication can be stopped temporarily (HOLD status). The command communications are

carried out when the HOLDB pin is HIGH. To get in HOLD status, at command communication, when SCK=LOW, set the

HOLDB pin LOW. At HOLD status, SCK and SI become Don’t Care, and SO becomes high impedance (High-Z). To release

the HOLD status, set the HOLDB pin HIGH when SCK=LOW. After that, communication can be restarted from the point

before the HOLD status. For example, when HOLD status is made after A5 address input at read, after release of HOLD

status, by starting A4 address input, read can be restarted. When in HOLD status, keep CSB LOW. When it is set

CSB=HIGH in HOLD status, the IC is reset, therefore communication after that cannot be restarted.

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BR25Sxxx-W Series (32K 64K 128K 256K)

●Method to cancel each command

○READ, RDSR

・Method to cancel : cancel by CSB = “H”.

Ope code

8 bits

Address

16 bits

Data

Ope code

8 bits

Cancel available in all areas of read mode

Cancel available in all

areas of rdsr mode

Figure 38. READ cancel valid timing

Figure 39. RDSR cancel valid timing

○WRITE、PAGE WRITE

Ope code

8bits

Address

16bits

Data

tE/W

d

a：Ope code or address input area

Cancellation is available by CSB=”H”.

b：Data input area (D7 to D1 input area)

Cancellation is available by CSB=”H”.

c：Data input area (D0 area)

8bits

b

a

c

SCK

SI

In this area, cancellation is not available.

When CSB is set HIGH, write starts.

d：tE/W area

D7 D6 D5 D4 D3 D2 D1 D0

c

b

In the area c, by rising CSB, write starts.

While writing, by any input, cancellation cannot be made.

Figure 40. WRITE cancel valid timing

Note1) If Vcc is made OFF during write execution, designated address data is not guaranteed, therefore write it once again.

Note2) If CSB is rised at the same timing as that of the SCK rise, write execution / cancel becomes unstable, therefore, it is

recommended to rise in SCK = “L” area. As for SCK rise, assure timing of tCSS / tCSH or more.

○WRSR

14 15

16

17

SCK

SI

a：From ope code to 15-th clock rise

Cancellation is available by CSB=”H”.

D1

D0

b：From 15-th clock rise to 16-th clock rise (write enable area)

In this area, cancellation is not available.

When CSB is set HIGH, write starts.

a

b

c

tE/W

c

Ope code

8 bits

Data

8 bits

c：After 16-th clock rise.

Cancellation is available by CSB=”H”.

However, if write starts (CSB is rised)

a

in the area b, cancellation cannot be made by any means.

And, by inputting on SCK clock, cancellation cannot be made.

b

Figure 41. WRSR cancel valid timing

Note1) If Vcc is made OFF during write execution, designated address data is not guaranteed, therefore write it once

again

Note2) If CSB is rised at the same timing as that of the SCK rise, write execution / cancel becomes unstable, therefore, it

is recommended to rise in SCK = “L” area. As for SCK rise, assure timing of tCSS / tCSH or more.

○WREN/WRDI

6

7

8

SCK

a：From ope code to 7-th clock rise, cancellation is available by CSB = “H”.

b：Cancellation is not available 7-th clock.

Ope code

8 bits

a

b

Figure 42. WREN/WRDI cancel valid timing

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BR25Sxxx-W Series (32K 64K 128K 256K)

●I/O peripheral circuits

In order to realize stable high speed operations, pay attention to the following input / output pin conditions.

○Input pin pull up, pull down resistance

When to attach pull up, pull down resistance to EEPROM input pin, select an appropriate value for the microcontroller

VOL, IOL with considering VIL characteristics of this IC.

V_CC－V_OLM

1. Pull up resistance

R_PU≧

･･･①

･･･②

I_OLM

V_ILE

V_OLM≦

Microcontroller

V_OLM

“L” output

I_OLM

EEPROM

V_ILE

Example) When Vcc=5V, V_ILE=1.5V, V_OLM=0.4V, I_OLM=2mA,

R_PU

from the equation ①,

5－0.4

2×10^-3

“L” input

R_PU≧

∴R_PU≧

2.3[kΩ]

Figure 43. Pull up resistance

With the value of Rpu to satisfy the above equation, V_OLM

becomes 0.4V or lower, and with V_ILE(=1.5V), the equation ② is

also satisfied.

・V_ILE:EEPROM V_ILspecifications

・V_OLM:Microcontroller V_OLspecifications

・I_OLM:Microcontroller I_OLspecifications

And, in order to prevent malfunction or erroneous write at power ON/OFF, be sure to make CSB pull up.

V_OHM

2.Pull down resistance

R_PD≧

･･･③

I_OHM

V_IHE

V_OHM≧

･･･④

Microcontroller

V_OHM

EEPROM

V_IHE

Example) When V_CC=5V, V_OHM=V_CC-0.5V, I_OHM＝0.4mA,

V_IHE=V_CC×0.7V, from the equation③,

5－0.5

R_PD

“H” output

I_OHM

“H” input

R_PD≧

0.4×10^-3

Figure 44. Pull down resistance

∴R_PD≧

11.3[kΩ]

Further, by amplitude VIHE, VILE of signal input to EEPROM, operation speed changes. By inputting Vcc/GND level

amplitude of signal, more stable high speed operations can be realized. On the contrary, when amplitude of 0.8VCC /

0.2Vcc is input, operation speed becomes slow.^*1

In order to realize more stable high speed operation, it is recommended to make the values of R_PU, R_PDas large as

possible, and make the amplitude of signal input to EEPROM close to the amplitude of VCC / GND level.

(^*1 In this case, guaranteed value of operating timing is guaranteed.)

○SO load capacity condition

Load capacity of SO output pin affects upon delay characteristic of SO output (Data output delay time, time from HOLDB

to High-Z, Output rise time, Output fall time.). In order to make output delay characteristic into better, make SO load

capacity small.

EEPROM

SO

C_L

Figure 45. SO load capacity

○Other cautions

Make the each wire length from the microcontroller to EEPROM input pin same length, in order to prevent setup / hold

violation to EEPROM, owing to difference of wire length of each input.

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Datasheet

BR25Sxxx-W Series (32K 64K 128K 256K)

●Equivalent circuit

○Output circuit

internal

signal

SO

internal

signal

Figure 46. SO output equivalent circuit

○Input circuit

internal

signal

CSB

internal

signal

Figure 47. CSB input equivalent circuit

internal

signal

internal

signal

SI

SCK

Figure 49. SI input equivalent circuit

Figure 48. SCK input equivalent circuit

internal

signal

internal

WP

HOLDB

signal

Figure 51. WP input equivalent circuit

Figure 50. HOLDB input equivalent circuit

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Datasheet

BR25Sxxx-W Series (32K 64K 128K 256K)

●Notes on power ON/OFF

○At standby

Set CSB “H”, and be sure to set SCK, SI input “L” or “H”. Do not input intermediate electric potantial.

○At power ON/OFF

When Vcc rise or fall, set CSB=”H” (=Vcc).

When CSB is “L”, this IC gets in input accept status (active). If power is turned on in this status, noises and the likes may

cause malfunction, erroneous write or so. To prevent these, at power ON, set CSB “H”. (When CSB is in “H” status, all

inputs are canceled.)

Vcc

CSB

Good example Bad example

Figure 52. CSB timing at power ON/OFF

(Good example) CSB terminal is pulled up to Vcc.

At power OFF, take 10ms or more before supply. If power is turned on without observing this condition, the IC

internal circuit may not be reset.

(Bad example) CSB terminal is “L” at power ON/OFF.

In this case, CSB always becomes “L” (active status), and EEPROM may have malfunction or erroneous write owing

to noises and the likes.

Even when CSB input is High-Z, the status becomes like this case.

○Operating timing after power ON

As shown in Figure 53, at standby, when SCK is “H”, even if CSB is fallen, SI status is not read at fall edge. SI status is

read at SCK rise edge after fall of CSB. At standby and at power ON/OFF, set CSB “H” status.

Even if CSB is fallen at SCK=”H”,

SI status is not read at that edge.

CSB

Command start here. SI is read.

SCK

SI

0

1

2

Figure 53. Operating timing

○At power on malfunction preventing function

This IC has a POR (Power On Reset) circuit as mistake write countermeasure. After POR action, it gets in write disable

status. The POR circuit is valid only when power is ON, and does not work when power is OFF. When power is ON, if the

recommended conditions of the following tR, tOFF, and Vbot are not satisfied, it may become write enable status owing to

noises and the likes.

tR

Vcc

Recommended conditions of t_R, t_OFF, Vbot

tR

tOFF

Vbot

tOFF

10ms or below

100ms or below

10ms or higher

0.3V or below

0.2V or below

Vbot

0

Figure 54. Rise waveform

○Low voltage malfunction preventing function

LVCC (Vcc-Lockout) circuit prevents data rewrite action at low power, and prevents wrong write.

At LVCC voltage (Typ. =1.2V) or below, it prevent data rewrite.

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Datasheet

BR25Sxxx-W Series (32K 64K 128K 256K)

●Noise countermeasures

○Vcc noise (bypass capacitor)

When noise or surge gets in the power source line, malfunction may occur, therefore, for removing these, it is

recommended to attach a bypass capacitor (0.1μF) between IC Vcc and GND. At that time, attach it as close to IC as

possible.

And, it is also recommended to attach a bypass capacitor between board Vcc and GND.

○SCK noise

When the rise time of SCK (tRC) is long, and a certain degree or more of noise exists, malfunction may occur owing to

clock bit displacement. To avoid this, a Schmitt trigger circuit is built in SCK input. The hysteresis width of this circuit is set

about 0.2V, if noises exist at SCK input, set the noise amplitude 0.2Vp-p or below. And it is recommended to set the rise

time of SCK (tRC) 100ns or below. In the case when the rise time is 100ns or higher, take sufficient noise

countermeasures. Make the clock rise, fall time as small as possible.

○WP noise

During execution of write status register command, if there exist noises on WP pin, mistake in recognition may occur and

forcible cancellation may result. To avoid this, a Schmitt trigger circuit is built in WP input. In the same manner, a Schmitt

trigger circuit is built in CSB input, SI input and HOLDB input too.

●Notes for use

(1) Described numeric values and data are design representative values, and the values are not guaranteed.

(2) We believe that application circuit examples are recommendable, however, in actual use, confirm characteristics further

sufficiently. In the case of use by changing the fixed number of external parts, make your decision with sufficient margin in

consideration of static characteristics and transition characteristics and fluctuations of external parts and our LSI.

(3) Absolute maximum ratings

If the absolute maximum ratings such as impressed voltage and operating temperature range and so forth are exceeded,

LSI may be destructed. Do not impress voltage and temperature exceeding the absolute maximum ratings. In the case of

fear exceeding the absolute maximum ratings, take physical safety countermeasures such as fuses, and see to it that

conditions exceeding the absolute maximum ratings should not be impressed to LSI.

(4) GND electric potential

Set the voltage of GND terminal lowest at any action condition. Make sure that each terminal voltage is higher than that

of GND terminal.

(5) Heat design

In consideration of permissible dissipation in actual use condition, carry out heat design with sufficient margin.

(6) Terminal to terminal short circuit and wrong packaging

When to package LSI onto a board, pay sufficient attention to LSI direction and displacement. Wrong packaging may

destruct LSI. And in the case of short circuit between LSI terminals and terminals and power source, terminal and GND

owing to foreign matter, LSI may be destructed.

(7) Use in a strong electromagnetic field may cause malfunction, therefore, evaluate design sufficiently.

Status of this document

The Japanese version of this document is formal specification. A customer may use this translation version only for a reference

to help reading the formal version.

If there are any differences in translation version of this document formal version takes priority.

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Datasheet

BR25Sxxx-W Series (32K 64K 128K 256K)

●Ordering Information

Product Code Description

B R

2 5

S

x x x

x x x - W

x x

BUS type

25：SPI

Operating temperature

-40℃ to+85℃

Capacity

32=32K

64=64K

256=256K

128=128K

Package

F

:SOP8

:SOP-J8

FJ

FV

: SSOP-B8

FVT

FVJ

FVM

NUX

: TSSOP-B8

: TSSOP-B8J

: MSOP8

: VSON008X2030

Double Cell

Packaging and forming specification

E2

TR

: Embossed tape and reel

(SOP8,SOP-J8, SSOP-B8,TSSOP-B8, TSSOP-B8J)

(MSOP8, VSON008X2030)

●Lineup

Package

Type

Capacity

Quantity

SOP8

Reel of 2500

SOP-J8

SSOP-B8

TSSOP-B8

TSSOP-B8J

MSOP8

32K

Reel of 3000

Reel of 2500

Reel of 3000

Reel of 4000

VSON008X2030

SOP8

Reel of 2500

SOP-J8

SSOP-B8

TSSOP-B8

TSSOP-B8J

MSOP8

64K

Reel of 3000

Reel of 2500

Reel of 3000

SOP8

Reel of 2500

SOP-J8

128K

256K

SSOP-B8

TSSOP-B8

SOP8

Reel of 3000

Reel of 2500

SOP-J8

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Datasheet

BR25Sxxx-W Series (32K 64K 128K 256K)

●Physical Dimension Tape and Reel Information

SOP8

Tape

Embossed carrier tape

2500pcs

Quantity

E2

Direction

of feed

The direction is the 1pin of product is at the upper left when you hold

reel on the left hand and you pull out the tape on the right hand

(

)

Direction of feed

1pin

Reel

Order quantity needs to be multiple of the minimum quantity.

∗

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Datasheet

BR25Sxxx-W Series (32K 64K 128K 256K)

●Physical Dimension Tape and Reel Information - continued

SOP-J8

Tape

Embossed carrier tape

2500pcs

Quantity

E2

Direction

of feed

The direction is the 1pin of product is at the upper left when you hold

reel on the left hand and you pull out the tape on the right hand

(

)

Direction of feed

1pin

Reel

Order quantity needs to be multiple of the minimum quantity.

∗

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Datasheet

BR25Sxxx-W Series (32K 64K 128K 256K)

●Physical Dimension Tape and Reel Information - continued

SSOP-B8

3.0 0.2

(MAX 3.35 include BURR)

8

7

6

5

1

2

3

4

0.15 0.1

S

0.1

S

+0.06

(0.52)

0.65

0.22

−0.04

M

0.08

(Unit : mm)

Tape

Embossed carrier tape

2500pcs

Quantity

E2

Direction

of feed

The direction is the 1pin of product is at the upper left when you hold

reel on the left hand and you pull out the tape on the right hand

(

)

Direction of feed

1pin

Reel

Order quantity needs to be multiple of the minimum quantity.

∗

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TSZ02201-0R2R0G100330-1-2

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Datasheet

BR25Sxxx-W Series (32K 64K 128K 256K)

●Physical Dimension Tape and Reel Information - continued

TSSOP-B8

Tape

Embossed carrier tape

3000pcs

Quantity

E2

Direction

of feed

The direction is the 1pin of product is at the upper left when you hold

reel on the left hand and you pull out the tape on the right hand

(

)

Direction of feed

1pin

Reel

Order quantity needs to be multiple of the minimum quantity.

∗

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Datasheet

BR25Sxxx-W Series (32K 64K 128K 256K)

●Physical Dimension Tape and Reel Information - continued

TSSOP-B8J

Tape

Embossed carrier tape

2500pcs

Quantity

E2

Direction

of feed

The direction is the 1pin of product is at the upper left when you hold

reel on the left hand and you pull out the tape on the right hand

(

)

Direction of feed

1pin

Reel

Order quantity needs to be multiple of the minimum quantity.

∗

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TSZ02201-0R2R0G100330-1-2

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Datasheet

BR25Sxxx-W Series (32K 64K 128K 256K)

●Physical Dimension Tape and Reel Information - continued

MSOP8

Tape

Embossed carrier tape

3000pcs

Quantity

TR

Direction

of feed

The direction is the 1pin of product is at the upper right when you hold

reel on the left hand and you pull out the tape on the right hand

(

)

1pin

Direction of feed

Reel

Order quantity needs to be multiple of the minimum quantity.

∗

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TSZ02201-0R2R0G100330-1-2

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Datasheet

BR25Sxxx-W Series (32K 64K 128K 256K)

●Physical Dimension Tape and Reel Information - continued

VSON008X2030

Tape

Embossed carrier tape

4000pcs

Quantity

TR

Direction

of feed

The direction is the 1pin of product is at the upper right when you hold

reel on the left hand and you pull out the tape on the right hand

(

)

Direction of feed

1pin

Reel

Order quantity needs to be multiple of the minimum quantity.

∗

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TSZ02201-0R2R0G100330-1-2

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Datasheet

BR25Sxxx-W Series (32K 64K 128K 256K)

●Marking Diagrams

SOP8(TOP VIEW)

SOP-J8(TOP VIEW)

Part Number Marking

LOT Number

1PIN MARK

SSOP-B8(TOP VIEW)

Part Number Marking

TSSOP-B8(TOP VIEW)

Part Number Marking

LOT Number

1PIN MARK

TSSOP-B8J(TOP VIEW)

Part Number Marking

MSOP8(TOP VIEW)

Part Number Marking

LOT Number

1PIN MARK

VSON008X2030 (TOP VIEW)

Part Number Marking

LOT Number

1PIN MARK

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Datasheet

BR25Sxxx-W Series (32K 64K 128K 256K)

●Marking Information

Product Name

Capacity

32K

Package Type

SOP8

Marking

S320

S640

5S128

S128

5S128

5S256

SOP-J8

SSOP-B8

TSSOP-B8

TSSOP-B8J

MSOP8

VSON008X2030

SOP8

SOP-J8

SSOP-B8

TSSOP-B8

TSSOP-B8J

MSOP8

64K

SOP8

SOP-J8

128K

256K

SSOP-B8

TSSOP-B8

SOP8

SOP-J8

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Datasheet

BR25Sxxx-W Series (32K 64K 128K 256K)

●Revision History

Date

Revision

001

Changes

21.Aug.2012

New Release

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Notice

Precaution on using ROHM Products

1. Our Products are designed and manufactured for application in ordinary electronic equipments (such as AV equipment,

OA equipment, telecommunication equipment, home electronic appliances, amusement equipment, etc.). If you

intend to use our Products in devices requiring extremely high reliability (such as medical equipment ^{(Note 1)}, transport

equipment, traffic equipment, aircraft/spacecraft, nuclear power controllers, fuel controllers, car equipment including car

accessories, safety devices, etc.) and whose malfunction or failure may cause loss of human life, bodily injury or

serious damage to property (“Specific Applications”), please consult with the ROHM sales representative in advance.

Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way responsible or liable for any

damages, expenses or losses incurred by you or third parties arising from the use of any ROHM’s Products for Specific

Applications.

(Note1) Medical Equipment Classification of the Specific Applications

JAPAN

USA

EU

CHINA

CLASSⅢ

CLASSⅣ

CLASSⅡb

CLASSⅢ

2. ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor

products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate

safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which

a failure or malfunction of our Products may cause. The following are examples of safety measures:

[a] Installation of protection circuits or other protective devices to improve system safety

[b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure

3. Our Products are designed and manufactured for use under standard conditions and not under any special or

extraordinary environments or conditions, as exemplified below. Accordingly, ROHM shall not be in any way

responsible or liable for any damages, expenses or losses arising from the use of any ROHM’s Products under any

special or extraordinary environments or conditions. If you intend to use our Products under any special or

extraordinary environments or conditions (as exemplified below), your independent verification and confirmation of

product performance, reliability, etc, prior to use, must be necessary:

[a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents

[b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust

[c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2,

H2S, NH3, SO2, and NO2

[d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves

[e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items

[f] Sealing or coating our Products with resin or other coating materials

[g] Use of our Products without cleaning residue of flux (even if you use no-clean type fluxes, cleaning residue of

flux is recommended); or Washing our Products by using water or water-soluble cleaning agents for cleaning

residue after soldering

[h] Use of the Products in places subject to dew condensation

4. The Products are not subject to radiation-proof design.

5. Please verify and confirm characteristics of the final or mounted products in using the Products.

6. In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse. is applied,

confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power

exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect

product performance and reliability.

7. De-rate Power Dissipation (Pd) depending on Ambient temperature (Ta). When used in sealed area, confirm the actual

ambient temperature.

8. Confirm that operation temperature is within the specified range described in the product specification.

9. ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in

this document.

Precaution for Mounting / Circuit board design

1. When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product

performance and reliability.

2. In principle, the reflow soldering method must be used; if flow soldering method is preferred, please consult with the

ROHM representative in advance.

For details, please refer to ROHM Mounting specification

Notice - GE

Rev.002

Daattaasshheeeett

Precautions Regarding Application Examples and External Circuits

1. If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the

characteristics of the Products and external components, including transient characteristics, as well as static

characteristics.

2. You agree that application notes, reference designs, and associated data and information contained in this document

are presented only as guidance for Products use. Therefore, in case you use such information, you are solely

responsible for it and you must exercise your own independent verification and judgment in the use of such information

contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses

incurred by you or third parties arising from the use of such information.

Precaution for Electrostatic

This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper

caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be

applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron,

isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).

Precaution for Storage / Transportation

1. Product performance and soldered connections may deteriorate if the Products are stored in the places where:

[a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2

[b] the temperature or humidity exceeds those recommended by ROHM

[c] the Products are exposed to direct sunshine or condensation

[d] the Products are exposed to high Electrostatic

2. Even under ROHM recommended storage condition, solderability of products out of recommended storage time period

may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is

exceeding the recommended storage time period.

3. Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads

may occur due to excessive stress applied when dropping of a carton.

4. Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of

which storage time is exceeding the recommended storage time period.

Precaution for Product Label

QR code printed on ROHM Products label is for ROHM’s internal use only.

Precaution for Disposition

When disposing Products please dispose them properly using an authorized industry waste company.

Precaution for Foreign Exchange and Foreign Trade act

Since our Products might fall under controlled goods prescribed by the applicable foreign exchange and foreign trade act,

please consult with ROHM representative in case of export.

Precaution Regarding Intellectual Property Rights

1. All information and data including but not limited to application example contained in this document is for reference

only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any

other rights of any third party regarding such information or data. ROHM shall not be in any way responsible or liable

for infringement of any intellectual property rights or other damages arising from use of such information or data.:

2. No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any

third parties with respect to the information contained in this document.

Other Precaution

1. This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM.

2. The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written

consent of ROHM.

3. In no event shall you use in any way whatsoever the Products and the related technical information contained in the

Products or this document for any military purposes, including but not limited to, the development of mass-destruction

weapons.

4. The proper names of companies or products described in this document are trademarks or registered trademarks of

ROHM, its affiliated companies or third parties.

Notice - GE

Rev.002

Daattaasshheeeett

General Precaution

1. Before you use our Pro ducts, you are requested to care fully read this document and fully understand its contents.

ROHM shall not be in an y way responsible or liable for failure, malfunction or accident arising from the use of a ny

ROHM’s Products against warning, caution or note contained in this document.

2. All information contained in this docume nt is current as of the issuing date and subj ect to change without any prior

notice. Before purchasing or using ROHM’s Products, please confirm the la test information with a ROHM sale s

representative.

3. The information contained in this doc ument is provi ded on an “as is” basis and ROHM does not warrant that all

information contained in this document is accurate an d/or error-free. ROHM shall not be in an y way responsible or

liable for any damages, expenses or losses incurred by you or third parties resulting from inaccuracy or errors of or

concerning such information.

Notice – WE

Rev.001


型号：	BR25S128FV-WE2
厂家：	ROHM
描述：	EEPROM, 16KX8, Serial, CMOS, PDSO8, 3 X 6.40 MM, 1.35 MM HEIGHT, ROHS COMPLIANT, SSOP-8 可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟光电二极管内存集成电路
文件：	总34页 (文件大小：684K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

BR25S128FV-WE2 [ROHM]

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