BR93H76RFJ-2C [ROHM]
BR93H76-2C是串行3线式接口方式的串行EEPROM。;
| 型号： | BR93H76RFJ-2C |
| 厂家： | 
ROHM |
| 描述： | BR93H76-2C是串行3线式接口方式的串行EEPROM。 可编程只读存储器 电动程控只读存储器 电可擦编程只读存储器 |
| 文件： | 总32页 (文件大小：1049K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Datasheet
Serial EEPROM Series Automotive EEPROM
125℃ Operation Microwire BUS EEPROM (3-wire)
BR93H76-2C
General Description
Package
(Typ)
(Typ)
(Max)
BR93H76-2C is a serial EEPROM of serial 3-line
interface method.
MSOP8
2.90mm x 4.00mm x 0.90mm
3.00mm x 6.40mm x 1.20mm
5.00mm x 6.20mm x 1.71mm
4.90mm x 6.00mm x 1.65mm
TSSOP-B8
SOP8
SOP-J8
Features
Conforming to Microwire BUS
Withstands Electrostatic Voltage up to 6kV
(HBM method typ）
Wide Temperature Range -40℃ to +125℃
Same package line-up and same pin configuration
2.5V to 5.5V Single Supply Voltage Operation
Address Auto Increment Function at READ
Operation
Prevention of write mistake
Write prohibition at power on
Write prohibition by command code
Write mistake prevention circuit at low voltage
TSSOP-B8
MSOP8
Self-timed programming cycle
Program Condition Display by READY / BUSY
Low Supply Current
Write Operation (5V) : 0.8mA (Typ)
Read Operation (5V) : 0.5mA (Typ)
Standby Operation (5V) : 0.1μA (Typ)
Compact package MSOP8 / TSSOP-B8 / SOP8 /
SOP-J8
High-Reliability using ROHM Original
Double-Cell structure
More than 50 years data retention (Ta≦125℃)
More than 300,000 write cycles (Ta≦125℃)
Data set to FFFFh on all addresses at shipment
AEC-Q100 Qualified
SOP-J8
SOP8
BR93H76-2C
MSOP8
RFVM
●
TSSOP-B8
SOP8
SOP-J8
RFJ
●
Package Type
Product Name
BR93H76-2C
Capacity
8Kbit
Bit Format
Supply Voltage
2.5V to 5.5V
RFVT
RF
512×16
●
●
○Product structure：Silicon monolithic integrated circuit ○This product is not designed protection against radioactive rays
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BR93H76-2C
Absolute Maximum Ratings (Ta=25℃)
Parameter
Symbol
VCC
Limit
Unit
V
Supply Voltage
-0.3 to +6.5
380 (MSOP8) (1)
410 (TSSOP-B8) (2)
560 (SOP8) (3)
560 (SOP-J8) (4)
-65 to +150
Permissible Dissipation
Pd
mW
Storage Temperature Range
Operating Temperature Range
Input Voltage/Output Voltage
Tstg
Topr
‐
℃
℃
V
-40 to +125
-0.3 to VCC+0.3
When using at Ta=25℃ or higher, 3.1mW(1), 3.3mW(2) , 4.5mW(3,4),to be reduced per 1℃.
Memory Cell Characteristics (VCC=2.5V to 5.5V)
Limit
Parameter
Unit
Conditions
Min
1,000,000
500,000
300,000
100
Typ
Max
-
-
-
-
-
-
-
-
-
-
-
-
Cycles
Cycles
Cycles
Years
Years
Years
Ta≦85℃
Ta≦105℃
Ta≦125℃
Ta≦25℃
Write Cycles (5)
Data Retention (5)
60
Ta≦105℃
Ta≦125℃
50
(5) Not 100% TESTED
Recommended Operating Conditions
Unit
V
Parameter
Symbol
VCC
Limit
Supply Voltage
Input Voltage
2.5 to 5.5
0 to VCC
VIN
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BR93H76-2C
DC Characteristics (Unless otherwise specified, Ta=-40℃ to +125℃, VCC=2.5V to 5.5V)
Limit
Parameter
Symbol
Unit
Conditions
Min
Typ
Max
0.3xVCC
VCC+0.3
0.4
Input Low Voltage
VIL
VIH
-0.3
-
-
-
-
-
-
-
-
-
-
-
-
V
V
Input High Voltage
0.7xVCC
Output Low Voltage 1
Output Low Voltage 2
Output High Voltage 1
Output High Voltage 2
Input Leak Current
Output Leak Current
VOL1
VOL2
VOH1
VOH2
ILI
0
V
IOL=2.1mA, 4.0V≦VCC≦5.5V
IOL=100μA
0
0.2
V
2.4
VCC
V
IOH=-0.4mA, 4.0V≦VCC≦5.5V
IOH=-100μA
VCC-0.2
VCC
V
-10
10
μA
μA
mA
mA
mA
μA
VIN=0V to VCC
ILO
-10
10
VOUT=0V to VCC, CS=0V
fSK=2MHz, tE/W=4ms (WRITE)
fSK=2MHz (READ)
ICC1
ICC2
ICC3
ISB
-
-
-
-
3.0
Supply Current
1.5
3.0
fSK=2MHz, tE/W=4ms (WRAL)
CS=0V, DO=OPEN
Standby Current
10
◎Radiation resistance design is not made.
AC Characteristics (Unless otherwise specified, Ta=-40℃ to +125℃, VCC=2.5V to 5.5V)
Parameter
Symbol
Min
Typ
Max
Unit
MHz
ns
SK Frequency
SK “H” Time
SK “L” Time
fSK
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2
tSKH
tSKL
tCS
200
200
200
50
50
0
-
-
ns
CS “L” Time
-
-
ns
CS Setup Time
DI Setup Time
CS Hold Time
DI Hold Time
tCSS
tDIS
tCSH
tDIH
ns
-
ns
-
ns
50
-
-
ns
Data “1” Output Delay Time
Data “0” Output Delay Time
Time from CS to Output establishment
Time from CS to High-Z
tPD1
tPD0
tSV
200
200
150
150
4
ns
-
ns
-
ns
tDF
-
ns
Write Cycle Time
tE/W
-
ms
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BR93H76-2C
Serial Input / Output Timing
CS
tSKH
tSKL
tCSS
tDIS
tCSH
SK
DI
tDIH
tPD1
tPD0
DO(READ)
tDF
STATUS VALID
DO(WRITE)
Figure 1. Serial Input / Output Timing Diagram
○Data is taken from DI, in sync with the rise of SK.
○At READ command, data is outputted from DO in sync with the rise of SK.
○After WRITE command input, the status signal of WRITE (READY / BUSY) can be monitored from DO by setting CS to “H”
after tCS, from the fall of CS, and will display a valid status until the next command start bit is inputted. But, if CS is set to
“L”, DO sets to High-Z state.
○To execute a series of commands, CS is set to “L” once after completion of each command for internal circuit reset
Block Diagram
Power source voltage detection
Command decode
Control
CS
SK
Clock generation
Write
prohibition
High voltage occurrence
Address
Address
buffer
Command
register
DI
9bit
decoder
9bit
8,192 bit
EEPROM
Data
register
R/W
amplifier
16bit
16bit
DO
Dummy bit
Figure 2. Block Diagram
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BR93H76-2C
Pin Configuration
TOP VIEW
VCC
8
NC
7
NC
6
GND
5
BR93H76RFVM-2C:MSOP8
BR93H76RFVT-2C :TSSOP-B8
BR93H76RF-2C :SOP8
BR93H76RFJ-2C :SOP-J8
1
2
3
4
CS
SK
DI
DO
Figure 3. Pin Configuration
Pin Descriptions
Pin Number
Pin Name
CS
I / O
Function
1
2
Input
Chip select input
Serial clock input
SK
Input
3
DI
Input
Start bit, ope code, address, and serial data input
Serial data output, READY / BUSY status output
Ground, 0V
4
DO
Output
5
GND
NC
-
-
-
6,7
8
Non connected terminal, VCC, GND or OPEN
Power supply, 2.5V to 5.5V
VCC
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BR93H76-2C
Typical Performance Curves
4.5
4.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Ta= -40
℃
Ta= -40
℃
Ta= 25
℃
Ta= 25
℃
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Ta= 125
℃
Ta= 125
℃
SPEC
SPEC
2
3
4
5
6
2
3
4
5
6
SUPPLY VOLTAGE : VCC V
［
］
SUPPLY VOLTAGE : VCC V
［ ］
Figure 4. Input High Voltage, (CS, SK, DI)
vs Supply Voltage
Figure 5. Input Low Voltage, (CS, SK, DI)
vs. Supply Voltage
1.0
0.8
0.6
0.4
0.2
0.0
1.0
Ta= -40
Ta= -40
℃
℃
Ta= 25
Ta= 25
℃
℃
0.8
0.6
0.4
0.2
0.0
Ta= 125
Ta= 125
℃
℃
SPEC
SPEC
0
1
2
3
4
5
0
1
2
3
4
5
OUTPUT LOW CURRENT : IOL mA
OUTPUT LOW CURRENT : IOL mA
［ ］
［
］
Figure 6. Output Low Voltage vs Output Low Current
(VCC=2.5V)
Figure 7. Output Low Voltage vs Output Low Current
(VCC=4.0V)
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BR93H76-2C
Typical Performance Curves‐Continued
5.0
5.0
4.0
3.0
2.0
1.0
0.0
Ta= -40
℃
4.0
3.0
2.0
1.0
0.0
Ta= 25
℃
Ta= 125
℃
Ta= -40
℃
Ta= 25
℃
Ta= 125
℃
SPEC
SPEC
0
0.4
0.8
1.2
1.6
0
0.4
0.8
1.2
1.6
OUTPUT HIGH CURRENT : IOH mA
［
］
OUTPUT HIGH CURRENT : IOH mA
［
］
Figure 8. Output High Voltage vs. Ouptput High Current
( VCC=2.5V)
Figure 9. Output High Voltage vs. Output High Current
( VCC=4.0V)
12
10
8
12
10
8
SPEC
SPEC
Ta= -40
℃
Ta= 25
℃
Ta= 125
℃
Ta= -40
℃
Ta= 25
℃
6
6
Ta= 125
℃
4
4
2
2
0
0
2
3
4
5
6
2
3
4
5
6
SUPPLY VOLTAGE : VCC V
［
］
SUPPLY VOLTAGE : VCC V
［
］
Figure 11. Output Leak Current, (DO)
vs. Supply Voltage
Figure 10. Input Leak Current, (CS, SK, DI)
vs. Supply Voltage
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BR93H76-2C
Typical Performance Curves‐Continued
3.5
1.6
1.2
0.8
0.4
0.0
SPEC
SPEC
3.0
2.5
Ta= -40
℃
Ta= 25
℃
Ta= 125
℃
Ta= -40
℃
2.0
1.5
1.0
0.5
0.0
Ta= 25
℃
Ta= 125
℃
2
3
4
5
6
2
3
4
5
6
SUPPLY VOLTAGE : VCC V
［
］
SUPPLY VOLTAGE : VCC V
［
］
Figure 12. Supply Current at WRITE Operation
vs. Supply Voltage
Figure 13. Supply Current at READ Operation
vs. Supply Voltage
(WRITE, fSK=2.0MHz)
(READ, fSK=2.0MHz)
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
12
SPEC
10
8
SPEC
Ta= -40
℃
Ta= -40
℃
Ta= 25
℃
Ta= 25
℃
6
Ta= 125
℃
Ta= 125
℃
4
2
0
2
3
4
5
6
2
3
4
5
6
SUPPLY VOLTAGE : VCC V
［
］
SUPPLY VOLTAGE : VCC V
［
］
Figure 14. Supply Current at WRAL Operation
vs. Supply Voltage
Figure 15. Standby Current vs. Supply Voltage
(WRAL, fSK=2.0MHz)
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BR93H76-2C
Typical Performance Curves‐Continued
28
24
300
250
200
150
100
50
Ta= -40
℃
Ta= 25
℃
SPEC
20
16
12
8
Ta= 125
℃
Ta= -40
℃
Ta= 25
℃
Ta= 125
℃
4
SPEC
0
0
2
3
4
5
6
2
3
4
5
6
SUPPLY VOLTAGE : VCC V
［
］
SUPPLY VOLTAGE : VCC V
［
］
Figure 16. SK Frequency vs. Supply Voltage
Figure 17. SK High Time vs. Supply Voltage
300
250
200
150
100
50
300
250
200
150
100
50
SPEC
SPEC
Ta= -40
℃
Ta= 25
℃
Ta= -40
℃
Ta= 125
℃
Ta= 25
℃
Ta= 125
℃
0
0
2
3
4
5
6
2
3
4
5
6
SUPPLY VOLTAGE : VCC V
［
］
SUPPLY VOLTAGE : VCC V
［
］
Figure 19. CS Low Time vs. Supply Voltage
Figure 18. SK Low Time vs. Supply Voltage
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BR93H76-2C
Typical Performance Curves‐Continued
120
100
120
100
80
60
40
20
0
Ta= -40
℃
Ta= 25
℃
Ta= 125
℃
80
60
40
20
0
Ta= -40
℃
Ta= 25
℃
Ta= 125
℃
SPEC
SPEC
2
3
4
5
6
2
3
4
5
6
SUPPLY VOLTAGE : VCC V
［
］
SUPPLY VOLTAGE : VCC V
［
］
Figure 20. CS Setup Time vs. Supply Voltage
Figure 21. DI Setup Time vs. Supply Voltage
120
100
80
60
40
20
0
50
0
-50
SPEC
-100
-150
-200
-250
-300
-350
-400
-450
Ta= -40
℃
Ta= 25
℃
Ta= 125
℃
SPEC
Ta= -40
℃
Ta= 25
℃
Ta= 125
℃
2
3
4
5
6
2
3
4
5
6
SUPPLY VOLTAGE : VCC V
［
］
SUPPLY VOLTAGE : VCC V
［
］
Figure 23. CS Hold Time vs. Supply Voltage
Figure 22. DI Hold Time vs. Supply Voltage
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BR93H76-2C
Typical Performance Curves‐Continued
350
300
350
300
250
200
150
100
50
Ta= -40
℃
Ta= -40
℃
Ta= 25
℃
Ta= 25
℃
250
200
150
100
50
Ta= 125
℃
Ta= 125
℃
SPEC
SPEC
0
0
2
3
4
5
6
2
3
4
5
6
SUPPLY VOLTAGE : VCC V
［
］
SUPPLY VOLTAGE : VCC V
［
］
Figure 25. Data "0" Output Delay Time
vs. Supply Voltage
Figure 24. Data "1" Output Delay Time
vs. Supply Voltage
250
200
150
100
50
250
200
150
100
50
Ta= -40
℃
Ta= 25
℃
Ta= -40
℃
Ta= 125
℃
Ta= 25
℃
Ta= 125
℃
SPEC
SPEC
0
0
2
3
4
5
6
2
3
4
5
6
SUPPLY VOLTAGE : VCC V
［
］
SUPPLY VOLTAGE : VCC V
［
］
Figure 27. Time from CS to High-Z
vs. Supply Voltage
Figure 26. Time from CS Output Establishment
vs. Supply Voltage
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BR93H76-2C
Typical Performance Curves‐Continued
6
Ta= -40
℃
5
4
3
2
1
0
Ta= 25
℃
Ta= 125
℃
SPEC
2
3
4
5
6
SUPPLY VOLTAGE : VCC V
［
］
Figure 28. Write Cycle Time vs. Supply Voltage
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BR93H76-2C
Description of Operation
Communications of the Microwire Bus are carried out by SK (serial clock), DI (serial data input), DO (serial data output), and
CS (chip select) for device selection.
In connecting one EEPROM to a microcontroller, connect it as shown in Figure.29-(a) or Figure.29-(b). And, when using the
input and output common I/O port of the microcontroller, connect DI and DO via a resistor as shown in Figure.29-(b) (Refer to
pages 19/29), wherein connection by 3 lines is possible.
In case of using multiple EEPROM devices, refer to Figure. 29-(c).
Micro-
controller
Micro-
Micro-
BR93H76
CS
BR93H76
CS
controller
controller
CS3
CS1
CS0
SK
DO
DI
CS
SK
DO
DI
CS
SK
DO
SK
DI
SK
DI
DO
DO
Device 2
Device 3
Device 1
Figure 29-(b). Connection by 3 lines Figure 29-(c). Connection example of multiple devices
Figure 29. Connection Methods with Microcontroller
Figure 29-(a). Connection by 4 lines
Communications of the Microwire Bus are started by the first “1” input after the rise of CS. This input is called the “Start Bit”.
After input of the start bit, the “Ope Code”, Address, and Data are then inputted consecutively. Address and Data are all
inputted with MSB first.
All “0” signal inputs after the rise of CS up to the start bit is ignored. Therefore, if there is a limitation in the bit width of PIC of
the microcontroller, it is possible to input “0” before the start bit to control the bit width.
Command Mode
Address
Start
bit
Ope
code
Command
Read (READ)
Data
BR93H76-2C
(1)
1
1
1
1
1
10
00
01
00
00
＊,A8,A7,A6,A5,A4,A3,A2,A1,A0
D15 to D0(READ DATA)
Write enable (WEN)
Write (WRITE)
1
1 ＊ ＊ ＊ ＊ ＊ ＊ ＊ ＊
－
(2)
＊,A8,A7,A6,A5,A4,A3,A2,A1,A0
D15 to D0(WRITE DATA)
D15 to D0(WRITE DATA)
－
(2,3)
Write all (WRAL)
Write disable (WDS)
0
0
1 ＊ ＊ ＊ ＊ ＊ ＊,B1,B0
0 ＊ ＊ ＊ ＊ ＊ ＊ ＊ ＊
・ Input the address and the data in MSB-first order.
・ As for *, input either VIH or VIL.
*Start bit
Acceptance of all the commands of this IC starts at recognition of the start bit.
The “Start Bit” means the first “1” input after the rise of CS.
(1) For READ, after setting the command, the data output of the selected address starts. Then, in a sequential order of addresses,
the data of the next address will be outputted , and will continuously output data of succeeding addresses with the use of a continuous SK clock input.
(Auto-Increment Function)
(2) When the WRITE and the WRITE-All commands are executed, the previous data written in the selected memory cell are automatically deleted first, then the
input data is written next.
(3) For the write all command, data written in memory cell of the areas designated by B1, and B0 are automatically deleted, and input data is written in bulk.
Write All Area
･The write all command is written in bulk in 2Kbit unit.
The write area can be selected up to 2bit. Confirm on
the left side the settings and write areas of B1, and B0.
B1 B0
Write area
000h to 07Fh
080h to 0FFh
100h to 17Fh
180h to 1FFh
0
0
1
1
0
1
0
1
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BR93H76-2C
Timing Chart
1) Read cycle (READ)
～～
～～
～～
～～
～～
CS
～～
～～
(1)
1
2
3
5
30
SK
DI
0
4
29
A8
A1 A0
＊
1
1
0
～～
～～
～～
～～
～～
～～
(2)
＊is Don’t Care.
D0
0
D15 D14
D1
D15 D14
DO
High-Z
(1) Start bit
When data “1” is input for the first time after the rise of CS, this will be recognized as the start bit. And, even if multiple “0” are input after the rise of CS, the
first “1” input will still be recognized as the start bit, and the following operation starts. This is common to all the commands that will be discussed hereafter.
(2) The succeeding address’ data output
（Auto-Increment Function）
Figure 30. Read Cycle
○When the READ command is recognized, the data (16bit) of the selected address is output to serial. And at that moment,
“0” (dummy bit) is output first, in sync with address bit A0 and with the rise of SK. Afterwhich, the main data is output in
sync with the rise of SK.
This IC has Address Auto Increment Function available only for READ command, wherein after executing READ
command on the first selected address, the data of the next address is read. And this will continue in a sequential
order of addresses with the use of a continuous SK clock input, and by keeping CS at “H” during auto-increment.
2) Write cycle (WRITE)
～～
～～
～～
～～
～～
tCS
STATUS
CS
SK
DI
～～
～～
～～
～～
1
2
4
29
0
3
5
～～
～～
～～
～～
1
0
1
＊
A1
A0 D15 D14
D1
D0
A8
tSV
＊is Don’t Care.
BUSY
～～
READY
DO
High-Z
tE/W
Figure 31. Write Cycle
○In this command, input 16-bit data (D15 to D0) are written to a designated address (A8 to A0). The actual write starts
from the fall of CS, after D0 is sampled with SK clock (29th clock from the start bit input), to the rise of the 30th clock.
When STATUS is not detected (CS="L" fixed), WRITE time is 4ms (Max) in conformity with tE/W
. And when STATUS is
detected (CS="H"), all commands are not accepted for areas where "L" (BUSY) is output from D0. Therefore, do not
input any command.
Write is not made or canceled if CS starts to fall after the rise of the 30th clock.
Note: Take tSKH or more from the rise of the 29th clock to the fall of CS.
3) Write all cycle (WRAL)
tCS
STATUS
CS
0
1
2
5
m
11
3
4
29
SK
DI
1
0
0
0
1
B1 B0 D15
＊
D1 D0
tSV
＊is Don’t Care.
BUSY
READY
DO
High-Z
tE/W
Figure 32. Write all Cycle
○In this command, input 16-bit data is written simultaneously to designated block for 128 words. Data is written in bulk at
a write time of only 4ms (Max) in conformity with tE/W. When writing data to all addresses, designate each block by B1,
and B0, and execute write. Write time is Max.4ms.
The actual write starts from the fall of CS, after D0 is sampled with SK clock (29th clock from the start bit input), to the
rise of the 30th clock. If CS was ended after the rise of the 30th clock, command is canceled, and write is not
completed.
Note:Take tSKH or more from the rise of the 29th clock to the fall of CS.
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4) Write Enable (WEN) / Disable (WDS) Cycle
～～
CS
SK
1
2
0
3
4
5
6
7
8
13
～～
ENABLE=1
DISABLE=0
1
0
～～
～～
DI
1
0
DO
High-Z
Figure 33. Write Enable (WEN) / Disable (WDS) Cycle
○At power on, this IC is in Write Disable status by the internal RESET circuit. Before executing the WRITE command, it
is necessary to execute the Write Enable command first. And, once this command is executed, writing is valid unitl the
Write Disable command is executed or the power is turned off. However, the READ command is valid regardless of
whether Write Enable / Disable command is executed. Input to SK after 6 clocks of this command is available by either
“H” or “L”, but be sure to input it.
○When the Write Enable command is executed after power on, Write Enable status gets in. When the Write Disable
command is executed then, the IC gets in Write Disable status as same as at power on, and then the WRITE command
is canceled thereafter in software manner. However, the READ command is still executable. In Write Enable status, even
when the WRITE command is input by mistake, writing will still continue. To prevent such a mistake, it is recommended
to execute the Write Disable command after the completion of each WRITE execution.
Application
1) Method to cancel each command
○READ
Start bit
Ope code
Address
Data
1bit
2bit
10bit
16bit
Cancel is available in all areas in read mode.
●Method to cancel：cancel by CS =“L”
Figure 34. READ Cancel Available Timing
○WRITE, WRAL
・Rise of 29th clock
28
29
30
31
SK
DI
D1
D0
a
c
b
Enlarged figure
Start bit
Ope code
Address
Data
16bit
tE/W
1bit
2bit
10bit
C
a
b
a：From start bit to 29th clock rise
Note 1) If V is turned OFF in this area,
cc
Cancel by CS=“L”
designated address data is not guaranteed.
Therefore, it is recommended to execute
WRITE once again.
b：29th clock rise and after
Cancellation is not available by any means. If Vcc is turned OFF in this area,
designated address data is not guaranteed, therefore write once again.
Note 2) If CS is started at the same timing as that of
the SK rise, WRITE execution/cancel becomes
unstable. Therefore, it is recommended to set CS
to “L” in SK=”L” area. As for SK rise, recommended
timing is of tCSS/tCSH or higher.
c：30th clock rise and after
Cancel by CS=“L”
However, when write is started in b area (CS is ended), cancellation is not
available by any means.
And when SK clock is input continuously, cancellation is not available.
Figure 35. WRITE, WRAL cancel available timing
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2) I/O Equivalent Circuit
○Output Circuit
DO
OEint.
Figure 36. Output Circuit (DO)
○Input circuit
RESET int.
CSint.
CS
Figure 37. Input Circuit (CS)
EN
SKint.
SK
Figure 38. Input Circuit (SK)
EN
DIint.
DI
Figure 39. Input Circuit (DI)
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3) I/O Peripheral Circuit
3-1) Pull down CS
By making CS=“L” at power ON/OFF, mistake in operation and mistake write are prevented.
○Pull down resistance Rpd of CS pin
To prevent mistake in operation and mistake write at power ON/OFF, a CS pull-down resistor is necessary.
Select an appropriate value to this resistance value from microcontroller’s VOH, IOH and this IC’s VIH characteristics.
VOHM
Rpd ≧
・・・①
・・・②
IOHM
VIHE
VOHM
≧
Microcontroller
VOHM
EEPROM
VIHE
Example) When VCC =5V, VIHE=3.5V, VOHM=4.0V, IOHM=2mA,
from the equation ①,
“H” output
“L” input
4.0
IOHM
Rpd
Rpd ≧
2×10-3
∴
Rpd ≧ 2.0 [kΩ]
With the value of Rpd satisfying the equation above, VOHM
becomes 4.0V or higher, and with VIHE (=3.5V), equation ② is
also satisfied.
Figure 40. CS Pull-Down Resistance
・VIHE
・VOHM : Microcontroller VOH specifications
・IOHM : Microcontroller IOH specifications
: EEPROM VIH specifications
3-2) DO is available for both pull up and pull down.
DO output is “High-Z” except during READY / BUSY output timing in WRITE command and, after data output at READ
command. When malfunction occurs at “High-Z” input of the microcontroller port connected to DO, it is necessary to pull
down and pull up DO. When there is no influence upon the microcontroller actions, DO may be left OPEN. If DO is
OPEN during a transition of output from BUSY to READY status, and at an instance where CS=“H”, SK=“H”, DI=“H”,
EEPROM recognizes this as a start bit, resets READY output, and sets DO=”High-Z”. Therefore, READY signal cannot
be detected. To avoid such output, pull up DO pin for improvement.
CS
SK
DI
CS
SK
DI
“H”
Enlarged
D0
High-Z
CS=SK=DI=”H”
When DO=OPEN
High-Z
READY
DO
DO
DO
BUSY
BUSY
BUSY
Improvement by DO pull up
CS=SK=DI=”H”
READY
When DO=pull up
Figure 41. READY Output Timing at DO=OPEN
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○Pull up Resistance Rpu and Pull-down Resistance Rpd of DO pin
As for pull up and pull down resistance value, select an appropriate value to this resistance value from microcontroller
VIH, VIL, and VOH, IOH, VOL, IOL characteristics of this IC.
Vcc－VOLE
Rpu ≧
VOLE
・・・③
・・・④
IOLE
VILM
Microcontroller
VILM
EEPROM
≦
Rpu
IOLE
Example) When VCC =5V, VOLE=0.4V, IOLE=2.1mA, VILM=0.8V,
from the equation ③,
VOLE
5－0.4
2.1×10-3
“L” input
Rpu ≧
∴
Rpu ≧ 2.2 [kΩ]
“L” output
With the value of Rpu to satisfy the above equation, VOLE becomes
0.4V or below, and with VILM(=0.8V), the equation ④ is also satisfied.
・VOLE : EEPROM VOL specifications
・IOLE
: EEPROM IOL specifications
Figure 42. DO Pull Up Resistance
・VILM : Microcontroller VIL specifications
VOHE
Rpd ≧
VOHE
・・・⑤
・・・⑥
IOHE
VIHM
EEPROM
≧
Microcontroller
Example) When VCC =5V, VOHE=4.8V, IOHE=0.1mA,
VIHM=3.5V from the equation ⑤
VIHM
VOHE
5－0.2
0.1×10-3
Rpd ≧
IOHE
“H” input
“H” output
Rpd
∴
Rpd ≧ 48 [kΩ]
With the value of Rpd to satisfy the above equation, VOHE becomes
4.8V or below, and with VIHM (=3.5V), the equation ⑥ is also satisfied.
Figure 43. DO Pull Down Resistance
・VOHE : EEPROM VOH specifications
・IOHE
: EEPROM IOH specifications
・VIHM : Microcontroller VIH specifications
○READY / BUSY Status Display (DO terminal)
This display outputs the internal status signal. When CS is started after tCS (Min.200ns)
from CS fall after write command input, “H” or “L” output.
R/B display＝“L” (BUSY) = write under execution
（DO status）
After the timer circuit in the IC works and creates the period of tE/W, this time circuit completes automatically.
And write to the memory cell is made in the period of tE/W, and during this period, other command is not
accepted.
R/B display = “H” (READY) = command wait status
（DO status）
Even after tE/W (max.4ms) from write of the memory cell, the following command is accepted.
Therefore, CS=“H” in the period of tE/W, and when input is in SK, DI, malfunction may occur. Therefore, set
DI=“L” in the area CS=“H”. (Especially, in the case of shared input port, attention is required.)
*Do not input any command while status signal is output. Command input in BUSY area is canceled, but command input in READY area is accepted.
Therefore, status READY output is canceled, and malfunction and mistake write may be made.
STATUS
CS
SK
DI
CLOCK
WRITE
INSTRUCTION
tSV
High-Z
DO
READY
BUSY
Figure 44. R/B Status Output Timing Chart
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4) When to directly connect DI and DO
This IC has independent input terminal DI and output terminal DO, wherein signals are handled separately on timing chart.
But, by inserting a resistance R between these DI and DO terminals, it is possible to carry out control by only 1 control line.
Microcontroller
DI/O PORT
EEPROM
DI
R
DO
Figure 45. DI, DO Control Line Common Connection
○Data collision of microcontroller DI/O output and DO output and feedback of DO output to DI input.
Drive from the microcontroller DI/O output to DI input on I/O timing, and signal output from DO output occur at the
same time in the following points.
4-1) 1 clock cycle to take in A0 address data at read command
Dummy bit “0” is output to DO terminal.
→When address data A0 = “1” input, through current route occurs.
EEPROM CS input
“H”
EEPROM SK input
A1 A0
EEPROM DI input
Collision of DI input and DO output
D15 D14 D13
EEPROM DO output
Microcontroller DI/O port
0
High-Z
A1 A0
High-Z
Microcontroller output
Microcontroller
Figure 46. Collision Timing at Read Data Output at DI, DO Direct Connection
4-2) Timing of CS = “H” after write command. DO terminal in READY / BUSY function output.
When the next start bit input is recognized, “HIGH-Z” gets in.
→Especially, at command input after write, when CS input is started with microcontroller DI/O output “L”,
READY output “H” is output from DO terminal, and through current route occurs.
Feedback input at timing of these 4-1) and 4-2) does not cause disorder in basic operations, if resistance R is inserted.
～～
EEPROM CS input
～～
Write command
～～
EEPROM SK input
EEPROM DI input
Write command
Write command
Write command
～～
～～
～～
～～
High-Z
READY
READY
READY
BUSY
EEPROM DO output
Microcontroller DI/O port
～～
Collision of DI input and DO output
BUSY
Write command
～～
～～
Microcontroller output
Microcontroller input
Microcontroller output
Figure 47. Collision Timing at DI, DO Direct Connection
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○Selection of resistance value R
The resistance R becomes through current limit resistance at data collision. When through current flows, noises of
power source line and instantaneous stop of power source may occur. When allowable through current is defined as I,
the following relation should be satisfied. Determine allowable current amount in consideration of impedance and so
forth of power source line in set. And insert resistance R, and set the value R to satisfy EEPROM input level VIH/VIL, even
under influence of voltage decline owing to leak current and so forth. Insertion of R will not cause any influence upon
basic operations.
4-3) Address data A0 = “1” input, dummy bit “0” output timing
(When microcontroller DI/O output is “H”, EEPROM DO outputs “L”, and “H” is input to DI)
・Make the through current to EEPROM 10mA or below.
・See to it that the input level VIH of EEPROM should satisfy the following.
Condition
VOHM ≦ VIHE
Microcontroller
EEPROM
VOHM ≦ IOHM×R + VOLE
At this moment, if VOLE=0V,
DI/O PORT
VOHM
IOHM
DI
VOHM ≦ IOHM×R
“H” output
R
VOHM
R ≧
∴
・・・⑦
DO
IOHM
・VIHE : EEPROM VIH specifications
・VOLE : EEPROM VOL specifications
・VOHM : Microcontroller VOH specifications
・IOHM : Microcontroller IOH specifications
VOLE
“L” output
Figure 48. Circuit at DI, DO Direct Connection (Microcontroller DI/O “H” Output, EEPROM “L” Output)
4-4) DO Status READY Output Timing
(When the microcontroller DI/O is “L”, EEPROM DO outputs “H”, and “L” is input to DI)
・Set the EEPROM input level VIL so as to satisfy the following.
Condition
Microcontroller
DI/O PORT
EEPROM
VOLM ≧ VILE
DI
“L” output
VOLM ≧ VOHE – IOLM×R
VOLM
As this moment, if VOHE=Vcc,
VOLM ≧ Vcc – IOLM×R
R
IOHM
Vcc – VOLM
DO
∴
R ≧
・・・⑧
IOLM
VOHE
“H” output
・VILE
: EEPROM VIL specifications
・VOHE : EEPROM VOH specifications
・VOLM : Microcontroller VOL specifications
・IOLM : Microcontroller IOL specifications
Example) When Vcc=5V, VOHM=5V, IOHM=0.4mA, VOLM=0.4V, IOLM=2.1mA,
From the equation ⑦,
From the equation ⑧,
Vcc – VOLM
IOLM
VOHM
R ≧
R ≧
R ≧
IOHM
5 – 0.4
2.1×10-3
5
R ≧
0.4×10-3
∴
R ≧ 2.2 [kΩ] ・・・⑩
Therefore, from the equations ⑨ and ⑩,
R ≧ 12.5 [kΩ]
Figure 49. Circuit at DI, DO Direct Connection (Microcontroller DI/O “L” Output, EEPROM “H” Output)
∴
R ≧ 12.5 [kΩ] ・・・⑨
∴
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5) Power-Up/Down Conditions
・At power ON/OFF, set CS “L”.
When CS is “H”, this IC gets in input accept status (active). At power ON, set CS “L” to prevent malfunction from noise.
(When CS is in “L” status, all inputs are canceled.) At power decline low power status may prevail. Therefore, at power
OFF, set CS “L” to prevent malfunction from noise.
VCC
VCC
GND
VCC
CS
GND
Bad example
Good example
Figure 50. Timing at Power ON/OFF
（Bad example）CS pin is pulled up to Vcc.
（Good example）It is “L” at power ON/OFF.
Set 10ms or higher to recharge at power OFF.
When power is turned on without observing this condition,
IC internal circuit may not be reset.
In this case, CS becomes “H” (active status), EEPROM may
malfunction or have write error due to noises. This is true even
when CS input is High-Z.
○POR circuit
This IC has a POR (Power On Reset) circuit as a mistake write countermeasure. After POR action, it gets in write
disable status. The POR circuit is valid only when power is ON, and does not work when power is OFF. However, if CS is
“H” at power ON/OFF, it may become write enable status owing to noises and the likes. For secure actions, observe the
following conditions.
1. Set CS=”L”
2. Turn on power so as to satisfy the recommended conditions of tR, tOFF, Vbot for POR circuit action.
tR
VCC
Recommended conditions of tR, tOFF, Vbot
tR
tOFF
Vbot
10ms or below 10ms or higher 0.3V or below
100ms or below 10ms or higher 0.2V or below
tOFF
Vbot
0
Figure 51. Rise Waveform Diagram
○LVCC Circuit
LVCC (VCC-Lockout) circuit prevents data rewrite action at low power, and prevents wrong write.
At LVCC voltage (Typ=1.9V) or below, it prevents data rewrite.
6) Noise Countermeasures
○VCC Noise (Bypass Capacitor)
When noise or surge gets in the power source line, malfunction may occur. Therefore, in removing these, it is
recommended to attach a bypass capacitor (0.1μF) between IC VCC and GND as close to IC as possible. It is also
recommended to attach a bypass capacitor between board VCC and GND.
○SK Noise
When the rise time (tR) of SK is long, and a certain degree or more of noise exists, malfunction may occur owing to clock
bit displacement.
To avoid this, a Schmitt trigger circuit is built in SK input. The hysteresis width of this circuit is set about 0.2V. If noise
exists at SK input, set the noise amplitude 0.2Vp-p or below. And it is recommended to set the rise time (tR) of SK to
100ns or below. In the case when the rise time is 100ns or higher, take sufficient noise countermeasures. Make the clock
rise, fall time as small as possible.
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Operational Notes
(1) Described numeric values and data are design representative values, and the values are not guaranteed.
(2) Application Circuit
Although we can recommend the application circuits contained herein with a relatively high degree of confidence, we
ask that you verify all characteristics and specifications of the circuit as well as its performance under actual conditions.
Please note that we cannot be held responsible for problems that may arise due to patent infringements or
noncompliance with any and all applicable laws and regulations.
(3) Absolute Maximum Ratings
Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit
between pins or an open circuit between pins. Therefore, it is important to consider circuit protection measures, such as
adding a fuse, in case the IC is operated over the absolute maximum ratings.
(4) Ground Voltage
The voltage of the ground pin must be the lowest voltage of all pins of the IC at all operating conditions. Ensure that no
pins are at a voltage below the ground pin at any time, even during transient condition.
(5) Thermal Consideration
Use a thermal design that allows for a sufficient margin by taking into account the permissible power dissipation (Pd) in
actual operating conditions. Consider Pc that does not exceed Pd in actual operating conditions (Pc≥Pd).
Package Power dissipation
Power dissipation
: Pd (W)=(Tjmax－Ta)/θja
: Pc (W)=(Vcc－Vo)×Io+Vcc×Ib
Tjmax : Maximum junction temperature=150℃, Ta : Peripheral temperature[℃] ,
θja : Thermal resistance of package-ambience[℃/W], Pd : Package Power dissipation [W],
Pc : Power dissipation [W], Vcc : Input Voltage, Vo : Output Voltage, Io : Load, Ib : Bias Current
(6) Short between pins and mounting errors
Be careful when mounting the IC on printed circuit boards. The IC may be damaged if it is mounted in a wrong
orientation or if pins are shorted together. Short circuit may be caused by conductive particles caught between the pins.
(7) Operation under strong Electromagnetic Field
Operating the IC in the presence of a strong electromagnetic field may cause the IC to malfunction.
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Part Numbering
－
B R 9 3 H 7 6 x x x x
2 C
x x
BUS Type
93: Microwire BUS
Operating temperature
H: -40oC to +125oC
Capacity
76 = 8Kbit
Package
RFVM: MSOP8
RFVT : TSSOP-B8
RF
: SOP8
RFJ : SOP-J8
Process code
Package specifications
TR：reel shape emboss taping (MSOP8)
E2：reel shape emboss taping (TSSOP-B8, SOP8, SOP-J8)
LineUp
Package
Capacity
8K
Orderable Part Number
Type
MSOP8
TSSOP-B8
SOP8
Quantity
BR93H76RFVM-2CTR
BR93H76RFVT-2CE2
BR93H76RF-2CE2
BR93H76RFJ-2CE2
Reel of 3000
Reel of 2500
SOP-J8
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Physical Dimensions Tape and Reel Information
MSOP8
2.9± 0.1
(MAX 3.25 include BURR)
+
6°
4°
−4°
8 7 6 5
1
2 3 4
1PIN MARK
+0.05
+0.05
0.145
–0.03
0.475
S
0.22
–0.04
0.08 S
0.65
(Unit : mm)
<Tape and Reel information>
Tape
Embossed carrier tape
3000pcs
Quantity
TR
Direction
of feed
The direction is the 1pin of product is at the upper right when you hold
reel on the left hand and you pull out the tape on the right hand
(
)
1pin
Direction of feed
Reel
Order quantity needs to be multiple of the minimum quantity.
∗
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TSSOP-B8
3.0± 0.1
(MAX 3.35 include BURR)
4 ± ±4
8
7
6
5
1
2
3
4
1PIN MARK
+0.05
0.145
–0.03
0.525
S
0.08 S
+0.05
0.245
M
–0.04
0.08
0.65
(Unit : mm)
<Tape and Reel information>
Tape
Embossed carrier tape
Quantity
3000pcs
E2
Direction
of feed
The direction is the 1pin of product is at the upper left when you hold
reel on the left hand and you pull out the tape on the right hand
(
)
Direction of feed
1pin
Reel
Order quantity needs to be multiple of the minimum quantity.
∗
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© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
TSZ02201-0R1R0G100040-1-2
25/29
16.Feb.2016 Rev.003
Daattaasshheeeett
BR93H76-2C
SOP8
5.0± 0.2
(MAX 5.35 include BURR)
+
−
6
°
4°
4
°
8
7
6
5
1
2
3
4
0.595
+0.1
0.17
-
0.05
S
0.1 S
1.27
0.42± 0.1
(Unit : mm)
<Tape and Reel information>
Tape
Embossed carrier tape
Quantity
2500pcs
E2
Direction
of feed
The direction is the 1pin of product is at the upper left when you hold
reel on the left hand and you pull out the tape on the right hand
(
)
Direction of feed
1pin
Reel
Order quantity needs to be multiple of the minimum quantity.
∗
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
TSZ02201-0R1R0G100040-1-2
16.Feb.2016 Rev.003
26/29
Daattaasshheeeett
BR93H76-2C
SOP-J8
4.9± 0.2
(MAX 5.25 include BURR)
+
6°
4°
−4°
8
7
6
5
1
2
3
4
0.545
0.2± 0.1
S
1.27
0.42± 0.1
0.1
S
(Unit : mm)
<Tape and Reel information>
Tape
Embossed carrier tape
2500pcs
Quantity
E2
Direction
of feed
The direction is the 1pin of product is at the upper left when you hold
reel on the left hand and you pull out the tape on the right hand
(
)
Direction of feed
1pin
Reel
Order quantity needs to be multiple of the minimum quantity.
∗
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
TSZ02201-0R1R0G100040-1-2
27/29
16.Feb.2016 Rev.003
Daattaasshheeeett
BR93H76-2C
Marking Diagrams
MSOP8 (TOP VIEW)
TSSOP-B8 (TOP VIEW)
Part Number Marking
Part Number Marking
LOT Number
R
6
H
7
LOT Number
1PIN MARK
1PIN MARK
SOP-J8 (TOP VIEW)
SOP8 (TOP VIEW)
Part Number Marking
Part Number Marking
R H 7 6
R H 7 6
LOT Number
LOT Number
1PIN MARK
1PIN MARK
Capacity
8K
Product Name Marking
Package Type
MSOP8
TSSOP-B8
SOP8
RH76
SOP-J8
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
TSZ02201-0R1R0G100040-1-2
16.Feb.2016 Rev.003
28/29
Daattaasshheeeett
BR93H76-2C
Revision History
Date
Revision
Changes
20.Jul.2012
19.Dec.2012
001
002
New Release
All page
P2
Document converted to new format.
Data Retention was changed.
P1
Data Retention and Write Cycles were modified.
Reference Page Number was modified.
Bit B2 was removed.
Comment in WRAL was modified.
Figure 31. was modified.
P13
P13
P14
P14
P18
16.Feb.2016
003
Text Bugs were removed in Figure 42..
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
TSZ02201-0R1R0G100040-1-2
16.Feb.2016 Rev.003
29/29
Notice
Precaution on using ROHM Products
(Note 1)
1. If you intend to use our Products in devices requiring extremely high reliability (such as medical equipment
,
aircraft/spacecraft, nuclear power controllers, etc.) and whose malfunction or failure may cause loss of human life,
bodily injury or serious damage to property (“Specific Applications”), please consult with the ROHM sales
representative in advance. Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way
responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of any
ROHM’s Products for Specific Applications.
(Note1) Medical Equipment Classification of the Specific Applications
JAPAN
USA
EU
CHINA
CLASSⅢ
CLASSⅣ
CLASSⅡb
CLASSⅢ
CLASSⅢ
CLASSⅢ
2. ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor
products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate
safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which
a failure or malfunction of our Products may cause. The following are examples of safety measures:
[a] Installation of protection circuits or other protective devices to improve system safety
[b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure
3. Our Products are not designed under any special or extraordinary environments or conditions, as exemplified below.
Accordingly, ROHM shall not be in any way responsible or liable for any damages, expenses or losses arising from the
use of any ROHM’s Products under any special or extraordinary environments or conditions. If you intend to use our
Products under any special or extraordinary environments or conditions (as exemplified below), your independent
verification and confirmation of product performance, reliability, etc, prior to use, must be necessary:
[a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents
[b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust
[c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2,
H2S, NH3, SO2, and NO2
[d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves
[e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items
[f] Sealing or coating our Products with resin or other coating materials
[g] Use of our Products without cleaning residue of flux (even if you use no-clean type fluxes, cleaning residue of
flux is recommended); or Washing our Products by using water or water-soluble cleaning agents for cleaning
residue after soldering
[h] Use of the Products in places subject to dew condensation
4. The Products are not subject to radiation-proof design.
5. Please verify and confirm characteristics of the final or mounted products in using the Products.
6. In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse. is applied,
confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power
exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect
product performance and reliability.
7. De-rate Power Dissipation depending on ambient temperature. When used in sealed area, confirm that it is the use in
the range that does not exceed the maximum junction temperature.
8. Confirm that operation temperature is within the specified range described in the product specification.
9. ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in
this document.
Precaution for Mounting / Circuit board design
1. When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product
performance and reliability.
2. In principle, the reflow soldering method must be used on a surface-mount products, the flow soldering method must
be used on a through hole mount products. If the flow soldering method is preferred on a surface-mount products,
please consult with the ROHM representative in advance.
For details, please refer to ROHM Mounting specification
Notice-PAA-E
Rev.003
© 2015 ROHM Co., Ltd. All rights reserved.
Precautions Regarding Application Examples and External Circuits
1. If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the
characteristics of the Products and external components, including transient characteristics, as well as static
characteristics.
2. You agree that application notes, reference designs, and associated data and information contained in this document
are presented only as guidance for Products use. Therefore, in case you use such information, you are solely
responsible for it and you must exercise your own independent verification and judgment in the use of such information
contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses
incurred by you or third parties arising from the use of such information.
Precaution for Electrostatic
This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper
caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be
applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron,
isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).
Precaution for Storage / Transportation
1. Product performance and soldered connections may deteriorate if the Products are stored in the places where:
[a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2
[b] the temperature or humidity exceeds those recommended by ROHM
[c] the Products are exposed to direct sunshine or condensation
[d] the Products are exposed to high Electrostatic
2. Even under ROHM recommended storage condition, solderability of products out of recommended storage time period
may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is
exceeding the recommended storage time period.
3. Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads
may occur due to excessive stress applied when dropping of a carton.
4. Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of
which storage time is exceeding the recommended storage time period.
Precaution for Product Label
A two-dimensional barcode printed on ROHM Products label is for ROHM’s internal use only.
Precaution for Disposition
When disposing Products please dispose them properly using an authorized industry waste company.
Precaution for Foreign Exchange and Foreign Trade act
Since concerned goods might be fallen under listed items of export control prescribed by Foreign exchange and Foreign
trade act, please consult with ROHM in case of export.
Precaution Regarding Intellectual Property Rights
1. All information and data including but not limited to application example contained in this document is for reference
only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any
other rights of any third party regarding such information or data.
2. ROHM shall not have any obligations where the claims, actions or demands arising from the combination of the
Products with other articles such as components, circuits, systems or external equipment (including software).
3. No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any
third parties with respect to the Products or the information contained in this document. Provided, however, that ROHM
will not assert its intellectual property rights or other rights against you or your customers to the extent necessary to
manufacture or sell products containing the Products, subject to the terms and conditions herein.
Other Precaution
1. This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM.
2. The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written
consent of ROHM.
3. In no event shall you use in any way whatsoever the Products and the related technical information contained in the
Products or this document for any military purposes, including but not limited to, the development of mass-destruction
weapons.
4. The proper names of companies or products described in this document are trademarks or registered trademarks of
ROHM, its affiliated companies or third parties.
Notice-PAA-E
Rev.003
© 2015 ROHM Co., Ltd. All rights reserved.
Daattaasshheeeett
General Precaution
1. Before you use our Pro ducts, you are requested to care fully read this document and fully understand its contents.
ROHM shall not be in an y way responsible or liable for failure, malfunction or accident arising from the use of a ny
ROHM’s Products against warning, caution or note contained in this document.
2. All information contained in this docume nt is current as of the issuing date and subj ect to change without any prior
notice. Before purchasing or using ROHM’s Products, please confirm the la test information with a ROHM sale s
representative.
3. The information contained in this doc ument is provi ded on an “as is” basis and ROHM does not warrant that all
information contained in this document is accurate an d/or error-free. ROHM shall not be in an y way responsible or
liable for any damages, expenses or losses incurred by you or third parties resulting from inaccuracy or errors of or
concerning such information.
Notice – WE
Rev.001
© 2015 ROHM Co., Ltd. All rights reserved.
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