BSM300D12P2E001 [ROHM]

BSM300D12P2E001由罗姆公司生产的SiC-DMOSFET和SiC-SBD构成，是2in1的SiC功率模块。;


型号：	BSM300D12P2E001
厂家：	ROHM
描述：	BSM300D12P2E001由罗姆公司生产的SiC-DMOSFET和SiC-SBD构成，是2in1的SiC功率模块。
文件：	总10页 (文件大小：1243K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SiC Power Module

Datasheet

BSM300D12P2E001

Application

Circuit diagram

 Motor drive

 Inverter, Converter

 Photovoltaics, wind power generation.

 Induction heating equipment.

3,4

Features

NTC

1) Low surge, low switching loss.

2) High-speed switching possible.

3) Reduced temperature dependence.

Construction

This product is a half bridge module consisting of SiC-DMOSFET and SiC-SBD from ROHM.

Dimensions & Pin layout (Unit : mm)

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Datasheet

BSM300D12P2E001

Absolute maximum ratings (T_j= 25°C)

Parameter

Drain-source voltage

Gate-source voltage()

Gate-source voltage()

Conditions

Limit

1200

Symbol

V_DSS

Unit

G-S short

D-S short

V_GSS

6

10 to 26

300

G - S Voltage (t_surge<300nsec) V_{GSS_surge}

I_D

DC (T_c=60°C)

Pulse (T_c=60°C) 1msꢀ*²

DC (T_c=60°C )

Pulse (Tc=60°C) 1msꢀ*²

Drain current *¹

I_DRM

600

I_S

300

Source current *¹

I_SRM

600

Total power disspation *³

Ptot

Max Junction Temperature

Operating junction temperature

Storage temperature

T_c=25°C

1875

175

T_jmax

T_jop

°C

40 to150

40 to125

T_stg

Terminals to baseplate,

f=60Hz AC 1min.

Isolation voltage

Mounting torque

Visol

2500

Vrms

N · m

4.5

3.5

Main Terminals : M6 screw



Mounting to heat shink : M5 screw

(*1) Case temperature (T_c) is defined on the surface of base plate just under the chips.

(*2) Repetition rate should be kept within the range where temperature rise if die should not exceed T_{j max.}

(*3) T_jis less than 175°C

Example of acceptable V_GSwaveform

26V

t_surge

22V

t_surge

6V

10V

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Datasheet

BSM300D12P2E001

Electrical characteristics (T_j=25°C)

Parameter

Conditions

Symbol

Min. Typ. Max.

Unit

T_j=25°C

T_j=125°C

T_j=150°C

2.2

3.0

3.4

2.9

－

4.5

3.2

2.1

－

Static drain-source on-state

voltage

V_DS(on)I_D=300A, V_GS=18V

V_DS=1200V, V_GS=0V

V_GS=0V, I_S=300A

Drain cutoff current

I_DSS

T_j=25°C

T_j=125°C

T_j=150°C

T_j=25°C

1.6

2.2

2.4

1.4

1.6

1.7

2.7

－

3.2

－

V_SD

Source-drain voltage

V_GS=18V, I_S=300A

T_j=125°C

T_j=150°C

－

1.6

－

0.5

－

4.0

0.5

－

V_DS=10V, I_D=68mA

V_GS=22V, V_DS=0V

V_GS= 6V, V_DS=0V

Gate-source threshold voltage V_GS(th)

I_GSS

Gate-source leakage current

A

－

t_d(on)

t_r

V_GS(on)=18V, V_GS(off)=0V

V_DS=600V

I_D=300A

Switching characteristics

t_rr

R_G=0.2

t_d(off)

t_f

250

inductive load

Input capacitance

Gate Registance

NTC Rated Resistance

NTC B Value

V_DS=10V, V_GS=0V,100kHz

Ciss



k

－

R_GintT_j=25°C

1.6

5.0

3370

R25

B50/25

Stray Inductance

Terminal to heat sink

14.5

15.0

12.0

9.0

－

Creepage Distance

Clearance Distance

Terminal to terminal

Terminal to heat sink

Terminal to terminal

DMOS (1/2 module) *⁴

SBD (1/2 module) *⁴

0.08

0.11

－

Junction-to-case thermal

resistance

R_th(j-c)

R_th(c-f)

－

K/W

Case to heat sink, per 1 module,

Thermal grease applied *⁵

Case-to-heat sink

Thermal resistance

0.035

(*4) Measurement of Tc is to be done at the point just under the chip.

(*5) Typical value is measured by using thermally

conductive grease of λ=0.9W/(m・K).

＜Wavelength for Switching Test＞

(*6) If the Product is used beyond absolute maximum

ratings defined in the Specifications, as its internal

structure may be dameged, please replace

Eon=Id×Vds

Eoff=Id×Vds

trr

Vsurge

such Product with a new one.

VDS

90%

10%

90%

10%

td(off)

td(on)

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Datasheet

BSM300D12P2E001

Electrical characteristic curves (Typical)

Fig.2 Drain-Source Voltage vs. Drain Current

Fig.1 Typical Output Characteristics [ T_j=25ºC ]

600

V_GS=18V

V_GS=16V

500

V_GS=20V

400

T_j=150ºC

V_GS=14V

300

T_j=125ºC

V_GS=12V

T_j=25ºC

200

ꢀ

100

V_GS=10V

200

400

600

Drain-Source Voltage : V_DS[V]

Drain Current : I_D[A]

Fig.4 Static Drain - Source On-State Resistance

vs. Junction Temperature

Fig.3 Drain-Source Voltage vs.

Gate-Source Voltage [ T_j=25ºC ]

I_D=300A

T_j=25ºC

V_GS=12V

I_D=400A

V_GS=14V

I_D=300A

V_GS=16V

V_GS=18V

V_GS=20V

I_D=200A

I_D=150A

100

150

200

250

Junction Temperature : T_j[ºC]

Gate-Source Voltage : V_GS[V]

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Datasheet

BSM300D12P2E001

Electrical characteristic curves (Typical)

Fig.6 Forward characteristic of Diode

Fig.5 Forward characteristic of Diode

1000

600

500

400

300

200

T_j=150ºC

T_j=125ºC

T_j=150ºC

T_j=125ºC

T_j=25ºC

T_j=150ºC

T_j=125ºC

T_j=150ºC

T_j=125ºC

100

T_j=25ºC

ꢀ

100

V_GS=0V

V_GS=18V

V_GS=0V

V_GS=18V

Source-Drain Voltage : V_SD[V]

Fig.8 Drain Current vs. Gate-Source Voltage

Fig.7 Drain Current vs. Gate-Source Voltage

600

1000

V_DS=20V

T_j=125ºC

500

T_j=150ºC

400

300

200

100

T_j=125ºC

T_j=150ºC

T_j=25ºC

Gate-Source Voltage : V_GS[V]

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Datasheet

BSM300D12P2E001

Electrical characteristic curves (Typical)

Fig.9 Switching Characteristics [ T_j=25ºC ]

Fig.10 Switching Characteristics [ T_j=150ºC ]

1000

t_d(off)

t_r

t_f

100

t_d(on)

t_f

t_d(on)

V_DS=600V

_GS(on)=18V

V_GS(off)= 0V

R_G=0.2

INDUCTIVE

LOAD

V_DS=600V

_GS(on)=18V

V_GS(off)= 0V

R_G=0.2

INDUCTIVE

LOAD

200

400

600

200

400

600

Drain Current : I_D[A]

Fig.11 Switching Loss vs. Drain Current

Fig.12 Switching Loss vs. Drain Current

[ T_j=150ºC ]

[ T_j=25ºC ]

V_DS=600V

_GS(on)=18V

V_GS(off)=0V

R_G=0.2

INDUCTIVE

LOAD

E_off

V_DS=600V

_GS(on)=18V

V_GS(off)=0V

E_on

R_G=0.2

INDUCTIVE

LOAD

E_on

E_off

E_rr

200

400

600

200

400

600

Drain Current : I_D[A]

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Datasheet

BSM300D12P2E001

Electrical characteristic curves (Typical)

Fig.13 Recovery Characteristics vs.

Fig.14 Recovery Characteristics vs.

Drain Current [ T_j=25ºC ]

Drain Current [ T_j=150ºC ]

1000

I_rr

100

0.1

100

t_rr

V_DS=600V

0.01

_GS(on)=18V

V_GS(on)=18V

V_GS(off)=0V

R_G=0.2

INDUCTIVE

LOAD

R_G=0.2

INDUCTIVE

LOAD

600

10.001

600

200

400

200

400

Drain Current : I_D[A]

Fig.16 Switching Characteristics vs. Gate

Fig.15 Switching Characteristics vs. Gate

Resistance [ T_j=150ºC ]

Resistance [ T_j=25ºC ]

10000

V_DS=600V

I_D=300A

V_GS(on)=18V

V_GS(off)=0V

I_D=300A

V_GS(on)=18V

V_GS(off)=0V

t_d(off)

INDUCTIVE

LOAD

INDUCTIVE

LOAD

1000

t_f

t_r

t_d(on)

100

0.1

100

0.1

100

Gate Resistance : R_G[]

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Datasheet

BSM300D12P2E001

Electrical characteristic curves (Typical)

Fig.18 Switching Loss vs. Gate Resistance

Fig.17 Switching Loss vs. Gate Resistance

[ T_j=150ºC ]

[ T_j=25ºC ]

V_DS=600V

I_D=300A

V_GS(on)=18V

V_GS(off)=0V

INDUCTIVE

LOAD

E_on

V_DS=600V

I_D=300A

V_GS(on)=18V

V_GS(off)=0V

INDUCTIVE

LOAD

E_off

E_on

E_rr

0.1

100

0.1

100

Gate Resistance : R_G[]

Fig.19 Typical Capacitance vs. Drain-Source

Voltage

Fig.20 Gate Charge Characteristics

[ T_j=25ºC ]

1.E-07

Ciss

1.E-08

1.E-09

1.E-10

Coss

I_D=300A

T_j=25ºC

Crss

100

V_GS=0V

0.01

0.1

1000

500

1000

1500

2000

Drain-Source Voltage : V_DS[V]

Total Gate charge : Qg [nC]

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Datasheet

BSM300D12P2E001

Electrical characteristic curves (Typical)

Fig.21 Normalized Transient Thermal

Impedance

0.1

Single Pulse

T_C=25ºC

Per unit base

DMOS part : 0.08K/W

SBD part : 0.11K/W

0.01

0.001

0.01

0.1

Time [s]

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Notice

N o t e s

1) The information contained herein is subject to change without notice.

2) Before you use our Products, please contact our sales representative and verify the latest specifica-

tions.

3) Although ROHM is continuously working to improve product reliability and quality, semicon-

ductors can break down and malfunction due to various factors.

Therefore, in order to prevent personal injury or fire arising from failure, please take safety

measures such as complying with the derating characteristics, implementing redundant and

fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no

responsibility for any damages arising out of the use of our Poducts beyond the rating specified by

ROHM.

4) Examples of application circuits, circuit constants and any other information contained herein are

provided only to illustrate the standard usage and operations of the Products. The peripheral

conditions must be taken into account when designing circuits for mass production.

5) The technical information specified herein is intended only to show the typical functions of and

examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,

any license to use or exercise intellectual property or other rights held by ROHM or any other

parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of

such technical information.

6) The Products specified in this document are not designed to be radiation tolerant.

7) For use of our Products in applications requiring a high degree of reliability (as exemplified

below), please contact and consult with a ROHM representative : transportation equipment (i.e.

cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety

equipment, medical systems, and power transmission systems.

8) Do not use our Products in applications requiring extremely high reliability, such as aerospace

equipment, nuclear power control systems, and submarine repeaters.

9) ROHM shall have no responsibility for any damages or injury arising from non-compliance with

the recommended usage conditions and specifications contained herein.

10) ROHM has used reasonable care to ensure the accuracy of the information contained in this

document. However, ROHM does not warrants that such information is error-free, and ROHM

shall have no responsibility for any damages arising from any inaccuracy or misprint of such

information.

11) Please use the Products in accordance with any applicable environmental laws and regulations,

such as the RoHS Directive. For more details, including RoHS compatibility, please contact a

ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting

non-compliance with any applicable laws or regulations.

12) When providing our Products and technologies contained in this document to other countries,

you must abide by the procedures and provisions stipulated in all applicable export laws and

regulations, including without limitation the US Export Administration Regulations and the Foreign

Exchange and Foreign Trade Act.

13) This document, in part or in whole, may not be reprinted or reproduced without prior consent of

ROHM.

Thank you for your accessing to ROHM product informations.

More detail product informations and catalogs are available, please contact us.

ROHM Customer Support System

http://www.rohm.com/contact/

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R1107

BSM300D12P2E001 [ROHM]

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