BSM600D12P3G001_技术文档

SiC Power Module

Datasheet

BSM600D12P3G001

òApplication

òCircuit diagram

ñ Motor drive

1

7

ñ Inverter, Converter

ñ Photovoltaics, wind power generation.

ñ Induction heating equipment.

9

8

3,4

òFeatures

6

5

1) Low surge, low switching loss.

2) High-speed switching possible.

3) Reduced temperature dependence.

2

10

NTC

11

òConstruction

This product is a half bridge module consisting of SiC-UMOSFET and SiC-SBD from ROHM.

òDimensions & Pin layout (Unit : mm)

D1

SS1 G1

TH1 TH2

8

9

7

10 11

4

3

1

2

6

5

G2 SS2

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3.Apr.2019 - Rev.001

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BSM600D12P3G001

Datasheet

òAbsolute maximum ratings (T_j= 25°C)

Symbol

V_DSS

V_GSS

V_GSSsurge

I_D

Parameter

Conditions

G-S short

Ratings

Unit

V

1200

22

Drain - Source Voltage

Gate - Source Voltage (+)

Gate - Source Voltage (-)

G - S Voltage (t_surge<300nsec)

D-S short

-4

D-S short

-4 to 26

576

DC(Tc=60°C) VGS=18V

DC(Tc=50℃) VGS=18V

Pulse (Tc = 60°C） 1ms VGS=18V

DC(Tc=60°C) VGS=18V

DC(Tc=50℃) VGS=18V

DC(Tc=60°C) VGS=0V

Pulse (Tc = 60°C） 1ms VGS=18V

Pulse (Tc = 60°C） 10us VGS=0V

Tc = 25°C

I_D

Drain Current _{Note 1)}

600

I_DRM

I_S

1200

576

Note 2)

A

I_S

600

I_S

Source Current _{Note 1)}

418

I_SRM

1200

2450

175

Note 2)

Total Power Dissipation _{Note 3)}

Max Junction Temperature

Junction Temperature

Storage Temperature

Isolation Voltage

Ptot

Tjmax

Tjop

W

-40 to 150

-40 to 125

2500

4.5

°C

Tstg

Visol

Terminals to baseplate f = 60Hz AC 1 min.

Main Terminals : M6 screw

Vrms

-

N ・m

Mounting Torque

Mounting to heat sink M5 screw

3.5

Note 1) Case temperature (Tc) is defined on the surface of base plate just under the chips.

Note 2) Repetition rate should be kept within the range where temperature rise if die should not

exceed Tjmax.

Note 3) Tj is less than 175°C.

Example of acceptable V_GSwaveform

＜Wavelength for Switching Test＞

Eon=Id×Vds

Eoff=Id×Vds

+26V

+22V

trr

t

surge

Vsurge

VDS

90%

10%

2%

ID

90%

10%

VGS

td(off)

td(on)

tr

tf

-4V

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BSM600D12P3G001

Datasheet

òElectrical characteristics (T_j=25°C)

Ratings

Min. Typ. Max.

Parameter

Symbol

VDS(on)

IDSS

Conditions

I_D=600A,V_GS=18V

VDS=1200V,VGS=0V

VGS=0V,IS=600A

Unit

Tj=25°C

－

1.8

2.6

2.9

2.4

On-state static

Drain-Source

Voltage

Tj=125°C

Tj=150°C

－

V

4.1

－

4

mA

Drain Cutoff Current

Tj=25°C

－

2.0

2.6

2.7

1.4

1.7

1.9

2.9

－

Tj=125°C

Tj=150°C

Tj=25°C

4.6

－

Souce-Drain

Voltage

VSD

V

VGS=18V,IS=600A

VDS=10V,ID=182mA

Tj=125°C

Tj=150°C

－

Gate-Source

Threshold Voltage

Gate-Source

VGS(th)

IGSS

2.7

－

5.6

V

VGS=22V,VDS=0V

VGS=-6V,VDS=0V

－

-0.5

－

0.5

－

61

80

µA

Leak Current

td(on)

tr

60

VGS(on)=18V、VGS(off)=-2V _{Note 4)}

VDS=600V

70

Switching

Characteristics

trr

45

ns

ID=600A

RG(on)=1.8 ohm, RG(off)=1.8 ohm

Inductive load

td (off)

tf

320

65

VDS=10V,VGS=0V,200kHz

Tj=25°C

Ciss

RGint

R25

31

nF

Ω

Input Capacitance

Gate Registance

NTC Rated Resistance

NTC B Value

1.4

5.0

3370

10.0

16.7

12.0

11.0

－

kΩ

K

B50/25

Ls

nH

mm

Stray Inductance

Terminal to heat sink

Terminal to terminal

-

Creepage Distance

Clearance Distance

Terminal to heat sink

-

Terminal to terminal

UMOSFET（1/2 module） _{Note 5)}

SBD（1/2 module） _{Note 5)}

Junction-to -Case

Thermal Resistance

Case-to -heat sink

Thermal Resistance

Rth(j-c)

Rth(c-f)

－

°C/kW

Case to heat sink, per 1 module. Thermal grease

applied. _{Note 6）}

－

15

－

Note 4) In order to prevent self turn-on, it is recommended to apply negative gate bias.

Measurement of Tc is to be done at the point just under the chip.

Note 5)

Note 6) Typical value is measured by using thermally conductive grease of λ=0.9W/(m・K).

Note 7) SiC devices have lower short cuicuit withstand capability due to high current density.

Please be advised to pay careful attention to short cuicuit accident and try to adjust

protection time to shutdown them as short as possible.

If the Product is used beyond absolute maximum ratings defined in the Specifications,

as its internal structure may be dameged, please replace such Product with a new one.

Note 8)

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3.Apr.2019 - Rev.001

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BSM600D12P3G001

Datasheet

òElectrical characteristic curves (Typical)

Fig.2 Drain source voltage characteristic

(TYP)

Fig.1 Output characteristic 25°Cꢀ(TYP)

6

5

4

3

2

1

0

1200

VGS=16V

Tj=150℃

VGS=18V

1000

VGS=14V

V_GS=18V

VGS=20V

800

Tj=125℃

600

VGS=12V

Tj=25℃

400

200

VGS=10V

0

2

4

6

8

0

200 400 600 800 1000 1200

Drain current I_D(A)

Drain source voltage V_DS(V)

Fig.3 Drain source voltage characteristic

Fig.4 Ron vs Tj characteristic (TYP)

25°C (TYP)

5

8

7

VGS=12V

4

6

5

4

3

2

1

0

VGS=14V

VGS=16V

VGS=18V

3

2

1

0

Tj=25℃

VGS=20V

ID=600A

ID=500A

ID=400A

ID=300A

ID=600A

0

50

100

150

200

250

12

14

16

18

20

22

24

Gate Source Voltage V_GS(V)

Junction temperature Tj (°C)

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BSM600D12P3G001

Datasheet

òElectrical characteristic curves (Typical)

Fig.5 Forward characteristic of Diode

(TYP)

Fig.6 Forward characteristic of Diode

(TYP)

1000

1200

1000

800

600

400

200

0

V_GS=18V

Tj=25℃

Tj=150℃

Tj=125℃

V_GS=18V

100

Tj=150℃

V_GS=0V

Tj=25℃

Tj=125℃

V_GS=0V

2

10

0

1

2

3

4

5

0

1

3

4

5

Source drain voltage V_SD(V)

Fig.7 Drain Current vs Gate Voltage (TYP)

1200

Fig.8 Drain Current vs Gate Voltage (TYP)

1.0E+03

1.0E+02

1.0E+01

1.0E+00

1.0E-01

1.0E-02

1.0E-03

1.0E-04

Tj=150℃

1000

Tj=150℃

Tj=125℃

800

V_DS=20V

Tj=125℃

Tj=25℃

600

V_DS=20V

400

Tj=25℃

200

0

5

10

15

0

5

10

15

Gate Source Voltage V_GS(V)

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3.Apr.2019 - Rev.001

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BSM600D12P3G001

Datasheet

òElectrical characteristic curves (Typical)

Fig.9 Switching time vs drain current at

Fig.10 Switching time vs drain current at

125°C (TYP)

25°C (TYP)

1000

100

10

1000

td(off)

tr

td(off)

tf

tr

100

td(on)

10

RG(on)=1.8Ω

VGS(on)=18V RG(off)=1.8Ω

VGS(off)=-2V

VDS=600V

RG(on)=1.8Ω

VDS=600V

VGS(on)=18V RG(off)=1.8Ω

INDUCTIVE LOAD

VGS(off)=-2V

1

0

200 400 600 800 1000 1200 1400

Drain current I_D(A)

0

200 400 600 800 1000 1200 1400

Drain current I_D(A)

Fig.11 Switching time vs drain current at

Fig.12 Switching loss vs drain current at

150°C (TYP)

1000

25°C (TYP)

90

td(off)

VDS=600V

80

Eoff

Eon

VGS(on)=18V

VGS(off)=-2V

70

60

50

40

30

20

10

0

RG(on)=1.8Ω

RG(off)=1.8Ω

INDUCTIVE LOAD

tf

tr

100

10

1

td(on)

RG(on)=1.8Ω

VDS=600V

VGS(on)=18V RG(off)=1.8Ω

INDUCTIVE LOAD

VGS(off)=-2V

Err

0

200 400 600 800 1000 1200 1400

Drain current I_D(A)

0

200 400 600 800 1000 1200 1400

Drain current I_D(A)

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BSM600D12P3G001

Datasheet

òElectrical characteristic curves (Typical)

Fig.13 Switching loss vs drain current at

Fig.14 Switching loss vs drain current at

150°C (TYP)

125°C (TYP)

90

80

70

60

50

40

30

20

10

0

90

VDS=600V

Eoff

Eon

Err

VDS=600V

VGS(on)=18V

VGS(off)=-2V

RG(on)=1.8Ω

RG(off)=1.8Ω

INDUCTIVE LOAD

Eoff

80

70

60

50

40

30

20

10

0

VGS(on)=18V

VGS(off)=-2V

RG(on)=1.8Ω

RG(off)=1.8Ω

INDUCTIVE LOAD

Eon

Err

0

200 400 600 800 1000 1200 1400

Drain current I_D(A)

0

200 400 600 800 1000 1200 1400

Drain current I_D(A)

Fig.15 Recovery characteristic vs drain

current at 25°C (TYP)

Fig.16 Recovery characteristic vs drain

current at 125°C (TYP)

100

1000

100

1000

100

10

trr

Irr

10

100

10

V_DS=600V

V_GS(on)=18V

V_GS(off)=-2V

R_G=1.8Ω

V_GS(on)=18V

V_GS(off)=-2V

R_G=1.8Ω

INDUCTIVE LOAD

1

10

1

0

200 400 600 800 100012001400

Drain current I_D(A)

0

200 400 600 800 100012001400

Drain current I_D(A)

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BSM600D12P3G001

Datasheet

òElectrical characteristic curves (Typical)

Fig.17 Recovery characteristic vs drain

current at 150°C (TYP)

Fig.18 Switching time vs gate resistance

at 25°C (TYP)

10000

1000

100

10

1

1000

V_DS=600V

I_D=600A

V_GS(on)=18V

V_GS(off)=-2V

INDUCTIVE LOAD

trr

Irr

td(off)

100

V_DS=600V

V_GS(on)=18V

V_GS(off)=-2V

R_G=1.8Ω

tf

tr

INDUCTIVE LOAD

td(on)

10

0.1

1

10

0

200 400 600 800 100012001400

Drain current I_D(A)

Gate resistance R_G(Ω)

Fig.19 Switching time vs gate resistance

at 125°C (TYP)

Fig.20 Switching time vs gate resistance

at 150°C (TYP)

10000

V_DS=600V

I_D=600A

V_GS(on)=18V

V_GS(off)=-2V

INDUCTIVE LOAD

V_DS=600V

I_D=600A

V_GS(on)=18V

V_GS(off)=-2V

INDUCTIVE LOAD

1000

100

10

1000

100

10

td(off)

tf

tr

td(on)

tr

td(on)

0.1

1

10

0.1

1

10

Gate resistance R_G(Ω)

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BSM600D12P3G001

Datasheet

òElectrical characteristic curves (Typical)

Fig.21 Switching loss vs gate resistance

at 25°C (TYP)

100

Fig.22 Switching loss vs gate resistance

at 125°C (TYP)

100

80

60

40

20

0

V_DS=600V

I_D=600A

V_GS(on)=18V

V_GS(off)=-2V

INDUCTIVE LOAD

V_DS=600V

I_D=600A

V_GS(on)=18V

V_GS(off)=-2V

80

INDUCTIVE LOAD

Eon

60

40

20

0

Eoff

Eon

Err

0.1

1

10

0.1

1

10

Gate resistance R_G(Ω)

Fig.23 Switching loss vs gate resistance

at 150°C (TYP)

100

V_DS=600V

I_D=600A

V_GS(on)=18V

V_GS(off)=-2V

INDUCTIVE LOAD

80

60

40

20

0

Eoff

Eon

Err

0.1

1

10

Gate resistance R_G(Ω)

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BSM600D12P3G001

Datasheet

òElectrical characteristic curves (Typical)

Fig.24 Capacitance vs Drain source

Fig.25 Gate charge characteristic (TYP)

voltage (TYP)

1.E-07

25

20

15

10

5

Ciss

1.E-08

ID=600A

V_DS=600V

Tj=25℃

VGS=0V

200kHz

Coss

Crss

1.E-09

1.E-10

0

-5

0.01

0.1

1

10

100

1000

0

500

1000

1500

2000

Drain source voltage V_DS(V)

Gate charge Q_G(nC)

Fig.26 Transient thermal impedance (TYP)

1

Single Pulse

Tc=25℃

0.1

Per unit base

UMOS part : 61℃/kW

SBD part :80℃/kW

0.01

0.0001 0.001 0.01

0.1

1

10

Time (s)

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3.Apr.2019 - Rev.001

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Notice

N o t e s

1) The information contained herein is subject to change without notice.

2) Before you use our Products, please contact our sales representative and verify the latest specifica-

tions.

3) Although ROHM is continuously working to improve product reliability and quality, semicon-

ductors can break down and malfunction due to various factors.

Therefore, in order to prevent personal injury or fire arising from failure, please take safety

measures such as complying with the derating characteristics, implementing redundant and

fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no

responsibility for any damages arising out of the use of our Poducts beyond the rating specified by

ROHM.

4) Examples of application circuits, circuit constants and any other information contained herein are

provided only to illustrate the standard usage and operations of the Products. The peripheral

conditions must be taken into account when designing circuits for mass production.

5) The technical information specified herein is intended only to show the typical functions of and

examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,

any license to use or exercise intellectual property or other rights held by ROHM or any other

parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of

such technical information.

6) The Products specified in this document are not designed to be radiation tolerant.

7) For use of our Products in applications requiring a high degree of reliability (as exemplified

below), please contact and consult with a ROHM representative : transportation equipment (i.e.

cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety

equipment, medical systems, and power transmission systems.

8) Do not use our Products in applications requiring extremely high reliability, such as aerospace

equipment, nuclear power control systems, and submarine repeaters.

9) ROHM shall have no responsibility for any damages or injury arising from non-compliance with

the recommended usage conditions and specifications contained herein.

10) ROHM has used reasonable care to ensure the accuracy of the information contained in this

document. However, ROHM does not warrants that such information is error-free, and ROHM

shall have no responsibility for any damages arising from any inaccuracy or misprint of such

information.

11) Please use the Products in accordance with any applicable environmental laws and regulations,

such as the RoHS Directive. For more details, including RoHS compatibility, please contact a

ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting

non-compliance with any applicable laws or regulations.

12) When providing our Products and technologies contained in this document to other countries,

you must abide by the procedures and provisions stipulated in all applicable export laws and

regulations, including without limitation the US Export Administration Regulations and the Foreign

Exchange and Foreign Trade Act.

13) This document, in part or in whole, may not be reprinted or reproduced without prior consent of

ROHM.

Thank you for your accessing to ROHM product informations.

More detail product informations and catalogs are available, please contact us.

ROHM Customer Support System

http://www.rohm.com/contact/

www.rohm.com

R1107

S


型号：	BSM600D12P3G001
厂家：	ROHM
描述：	BSM600D12P3G001是由罗姆公司生产的SiC-UMOSFET和SiC-SBD构成的全SiC半桥模块。适合电机驱动、逆变器、转换器、太阳能发电、风力发电及感应加热装置等用途。 SiC支持页面评估板应用实例罗姆SiC器件什么是SiC？电子基础电子电机驱动装置转换器
文件：	总11页 (文件大小：943K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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