DA121TL [ROHM]

Rectifier Diode, 1 Element, 0.1A, 80V V(RRM), Silicon,;
DA121TL
型号: DA121TL
厂家: ROHM    ROHM
描述:

Rectifier Diode, 1 Element, 0.1A, 80V V(RRM), Silicon,

光电二极管
文件: 总3页 (文件大小:46K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DA114/DA121/DA227/DAN202K/DAN202U  
Diodes  
DAN212K/DAN222/DAP202K/DAP202U/DAP222  
Ultra high-speed switching diode arrays  
DA114 / DA121 / DA227  
DAN202K / DAN202U / DAN212K / DAN222  
DAP202K / DAP202U / DAP222  
!Applications  
!External dimensions (Units : mm)  
Ultra high speed switching  
DAN202K / DAP202K / DAN212K  
DA114 / DAN202U / DAP202U  
!Features  
1) Four types of packaging are available.  
2) High reliability.  
2.9±0.2  
+0.2  
-0.1  
1.1  
2.0±0.2  
1.3±0.1  
1.9±0.2  
0.9±0.1  
0.95 0.95  
0.8±0.1  
0.3  
0.6  
0.65 0.65  
(1)  
(2)  
3) High speed. (Typical recovery time=  
1.5ns)  
(1)  
(2)  
0~0.1  
0~0.1  
(3)  
(3)  
4) Suitable for high packing density layout.  
+0.1  
-0.06  
+0.1  
-0.05  
0.15  
0.4  
0.15±0.05  
(All pins have the same dimensions)  
0.3±0.1  
(All pins have the same dimensions)  
ROHM : UMD3  
EIAJ : SC - 70  
JEDEC : SOT - 323  
ROHM : SMD3  
EIAJ : SC - 59  
!Construction  
Silicon epitaxial planar  
DA121 / DAN222 / DAP222  
DA227  
1.25±0.1  
!Marking  
0.6 0.65  
0.3±0.1 0.2±0.1  
0.9±0.1  
0.7  
DAN222  
DAN202U  
DAN202K  
1.6±0.2  
1.0±0.1  
N
P
0.7±0.1  
(1)  
(4)  
+0.1  
+0.1  
-0.05  
0.5 0.5  
0.2  
0.2  
0.55±0.1  
-0.05  
DAP222  
DAP202U  
DAP202K  
(1)  
(2)  
0~0.1  
0~0.1  
(2)  
(3)  
0.2±0.1 0.2±0.1  
0.65 0.65  
1.3±0.1  
(3)  
+0.1  
0.15±0.05  
0.3  
-0.05  
DA121  
0.15±0.05  
DA114  
DAN212K  
AV  
N20  
2.0±0.2  
ROHM : UMD4  
EIAJ : SC - 82  
DA227  
ROHM : EMD3  
EIAJ : SC - 75  
JEDEC : SOT - 343  
DA114/DA121/DA227/DAN202K/DAN202U  
Diodes  
DAN212K/DAN222/DAP202K/DAP202U/DAP222  
!Equivalent circuits  
(1)  
(2)  
(2)  
(1)  
(2)  
(4)  
(3)  
(2)  
(1)  
(3)  
(3)  
(3)  
DAN202K  
DAN202U  
DAN222  
DAP202K  
DAP202U  
DAP222  
DA114  
DA121  
DA227  
DAN212K  
!Absolute maximum ratings (Ta=25°C)  
Power  
dissipation  
(TOTAL)  
Junction  
temperature  
Tj (ºC)  
Storage  
temperature  
Tstg (ºC)  
Peak reverse DC reverse Peak forward Mean rectifying Surge current  
voltage  
voltage  
current  
current  
(1µs)  
Type  
TYPE  
V
RM (V)  
V
R
(V)  
I
FM (mA)  
I
O
(mA)  
I
surge (A)  
Pd(mW)  
55~+150  
55~+150  
55~+150  
55~+150  
55~+150  
55~+150  
55~+150  
55~+150  
55~+150  
55~+150  
DA114  
80  
80  
80  
80  
80  
80  
80  
80  
80  
80  
80  
300  
300  
300  
300  
300  
300  
300  
300  
300  
300  
100  
100  
100  
100  
100  
100  
100  
100  
100  
100  
4
4
4
4
4
4
4
4
4
4
200  
150  
200  
200  
150  
150  
200  
150  
150  
150  
150  
150  
150  
150  
150  
150  
150  
150  
150  
150  
N
N
N
P
N
P
N
N
P
N
DA121  
80  
80  
80  
80  
80  
80  
80  
80  
80  
DAN202K  
DAP202K  
DAN202U  
DAP202U  
DAN212K  
DAN222  
DAP222  
DA227  
!Electrical characteristics (Ta=25°C)  
Forward voltage  
Cond.  
Reverse current Capacitance between terminals  
Reverse recovery time  
Type  
Cond.  
(V)  
Cond.  
Cond.  
(ns)  
VF  
(V)  
I
R
(
µA  
)
CT  
Max.  
(
pF  
)
t
rr  
Max.  
Max.  
Max.  
I
F
(mA  
)
V
R
V
R
(V) f (MHz)  
V
R
(V)  
I
F
(
5
5
5
5
5
5
5
5
5
5
mA)  
DA114  
1.2  
1.2  
1.2  
1.2  
1.2  
1.2  
1.2  
1.2  
1.2  
1.2  
100  
100  
100  
100  
100  
100  
100  
100  
100  
100  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
70  
70  
70  
70  
70  
70  
70  
70  
70  
70  
3.5  
3.5  
3.5  
3.5  
3.5  
3.5  
3.5  
3.5  
3.5  
3.5  
6
1
1
1
1
1
1
1
1
1
1
4
4
4
4
4
4
4
4
4
4
6
DA121  
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
DAN202K  
DAP202K  
DAN202U  
DAP202U  
DAN212K  
DAN222  
DAP222  
DA227  
DA114/DA121/DA227/DAN202K/DAN202U  
Diodes  
DAN212K/DAN222/DAP202K/DAP202U/DAP222  
!Electrical characteristic curves (Ta=25°C unless specified otherwise)  
1 000  
100  
10  
50  
125  
100  
75  
50  
25  
0
Ta=100ºC  
75ºC  
20  
10  
5
50ºC  
25ºC  
Ta=85ºC  
50ºC  
25ºC  
2
1
0ºC  
1
0ºC  
25ºC  
30ºC  
0.5  
0.1  
0.2  
0.1  
0.010  
10  
REVERSE VOLTAGE : V  
20  
30  
40  
(V)  
50  
0
25  
50  
75  
100  
125  
150  
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6  
AMBIENT TEMPERATURE :Ta (ºC)  
FORWARD VOLTAGE : VF (V)  
R
Fig. 1 Derating curve  
Fig. 2 Forward current vs.  
forward voltage  
(P TYPE)  
Fig. 3 Reverse current vs.  
reverse voltage  
(P TYPE)  
(mounting on glass epoxy  
PCBs)  
1 000  
100  
10  
50  
Ta=100ºC  
f=1MHz  
20  
10  
5
75ºC  
4
2
50ºC  
25ºC  
Ta=85ºC  
50ºC  
25ºC  
2
1
0ºC  
1
P TYPE  
N TYPE  
0ºC  
30ºC  
25ºC  
0.5  
0.1  
0.2  
0.1  
0
0
0.010  
10  
REVERSE VOLTAGE : VR (V)  
20  
30  
40  
50  
2
4
6
8
10 12 14 16 18 20  
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6  
REVERSE VOLTAGE : V V)  
R
(
FORWARD VOLTAGE : V  
F
(V)  
Fig. 6 Capacitance between  
terminals vs.  
Fig. 4 Forward current vs.  
forward voltage  
(N TYPE)  
Fig. 5 Reverse current vs.  
reverse voltage  
reverse voltage  
(N TYPE)  
0.01µF  
10  
9
8
7
6
5
4
3
2
1
0
D.U.T.  
VR=6V  
5  
PULSE GENERATOR  
SAMPLING  
OSCILLOSCOPE  
50  
OUTPUT 50Ω  
INPUT  
100ns  
0
1
2
3
4
5
6
7
8
9
10  
OUTPUT  
t
rr  
FORWARD CURRENT : I  
F
(mA)  
0
Fig. 7 Reverse recovery time vs.  
forward current  
Fig. 8 Reverse recovery time (trr) measurement circuit  

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