DB3X313F0L [ROHM]

Mixer Diode, Ultra High Frequency, Silicon, TO-236AA, SC-59A, 3 PIN;
DB3X313F0L
型号: DB3X313F0L
厂家: ROHM    ROHM
描述:

Mixer Diode, Ultra High Frequency, Silicon, TO-236AA, SC-59A, 3 PIN

光电二极管
文件: 总4页 (文件大小:522K)
中文:  中文翻译
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DB3X313F  
Silicon epitaxial planar type  
For small current rectication  
Unit: mm  
Features  
Low forward voltage VF and small reverse current IR  
Low terminal capacitance Ct  
Halogen-free / RoHS compliant  
(EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)  
Marking Symbol: 4Q  
Basic Part Number  
Dual DB2J313 (Series)  
Packaging  
DB3X313F0L Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)  
Absolute Maximum Ratings Ta = 25°C  
1:Anode-1  
3: Cathode-1  
Anode-2  
Parameter  
Symbol  
VR  
Rating  
30  
Unit  
V
2: Cathode-2  
Reverse voltage  
Panasonic  
JEITA  
Mini3-G3-B  
SC-59A  
Repetitive peak reverse voltage  
VRRM  
30  
V
Single  
Series  
Single  
Series  
Single  
Series  
200  
Code  
TO-236AA/SOT-23  
Forward current (Average)  
IF(AV)  
mA  
mA  
A
130  
3
300  
Peak forward current  
IFM  
220  
1.0  
Non-repetitive peak reverse  
IFSM  
1
surge voltage *  
0.7  
1
2
Junction temperature  
Tj  
125  
°C  
°C  
°C  
Operating ambient temperature  
Storage temperature  
Topr  
–40 to +85  
–55 to +125  
T
stg  
Note) 1: 50 Hz sine wave 1 cycle (Non-repetitive peak current)  
*
Electrical Characteristics Ta = 25°C±3°C  
Parameter  
Symbol  
Conditions  
Min  
Typ  
Max  
Unit  
V
Forward voltage  
Reverse current  
VF  
IR  
Ct  
trr  
IF = 200 mA  
VR = 30 V  
0.55  
50  
mA  
pF  
ns  
Terminal capacitance  
Reverse recovery time *  
VR = 10 V, f = 1 MHz  
IF = IR =100 mA, Irr = 0.1 × IR , RL = 100 Ω  
3.8  
1.5  
1
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.  
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage  
of current from the operating equipment.  
3. Absolute frequency of input and output is 1 GHz  
1: trr measurement circuit  
*
Input Pulse  
Output Pulse  
trr  
Bias Application Unit (N-50BU)  
tp  
tr  
t
10%  
IF  
t
A
90%  
VR  
I
rr = 0.1 × IR  
tp = 2 µs  
tr = 0.35 ns  
δ = 0.05  
IF = 100 mA  
IR = 100 mA  
RL = 100 Ω  
Pulse Generator  
(PG-10N)  
Rs = 50 Ω  
Wave Form Analyzer  
(SAS-8130)  
Ri = 50 Ω  
Publication date: May 2013  
Ver. CED  
1
DB3X313F  
IF VF  
IR VR  
Ct VR  
102  
103  
25  
20  
15  
10  
5
1
Ta = 125°C  
Pulse test  
Ta = 25°C  
100°C  
85°C  
101  
102  
103  
104  
105  
Ta = 125°C  
104  
105  
106  
107  
25°C  
40°C  
20  
100°C  
85°C  
25°C  
40°C  
0.2  
108  
109  
0
0
10  
20  
30  
0
0.4  
0.6  
0
10  
30  
Reverse voltage VR (V)  
Forward voltage VF (V)  
Reverse voltage VR (V)  
Ver. CED  
2
DB3X313F  
Unit: mm  
Mini3-G3-B  
Land Pattern (Reference) (Unit: mm)  
Ver. CED  
3
No.010618  

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