DTA014YEB [ROHM]

100mA/-50V Digital transistors(with built-in resistors); 百毫安/ -50V数字晶体管（具有内置电阻）


型号：	DTA014YEB
厂家：	ROHM
描述：	100mA/-50V Digital transistors(with built-in resistors) 百毫安/ -50V数字晶体管（具有内置电阻）晶体数字晶体管
文件：	总3页 (文件大小：985K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Data Sheet

-100mA/-50V Digital transistors(with built-in resistors)

DTA014YM / DTA014YEB / DTA014YUB

Features

Dimensions (Unit : mm)

1) Built-in bias resistors enable the configuration of

an inverter circuit without connecting external input resistors.

(See Equivalent circuit)

VMT3

2) The bias resistors consist of thin-film resistors with complete

isolation to allow positive biasing of the input.

They also have the advantage of almost completely

eliminating parasitic effects.

Abbreviated symbol : 34

EMT3F

3) Only the on/off conditions need to be set for operation,

making the device design easy.

(3)

(1)

(2)

Structure

Abbreviated symbol : 34

PNP epitaxial planar silicon transistor

(Resistor built-in type)

UMT3F

2.0

0.9

0.32

(3)

Applications

(1)

(2)

0.13

0.65 0.65

1.3

Inverter, Interface, Driver

Abbreviated symbol : 34

Packaging specifications

Equivalent circuit

Package

VMT3

Taping

T2L

EMT3F

Taping

UMT3F

Taping

OUTUT

R₁

Packaging Type

Code

ININ

Type

R₂2

Basic ordering

unit (pieces)

GND(+)(+)

GND

8000

3000

ININ

OUTUT

DTA014YM

DTA014YEB

DTA014YUB

○

GND(+)

○

R₁=10kΩ,R₂=47kΩ

Absolute maximum (Ta=25C)

Limits(DTA014Y□)

Parameter

Symbol

V_CC

Unit

-50

-40

Supply voltage

Input voltage

V_IN

I_C(max)

I_O

Collector current *1

-100

-70

C

Output current

P_D

Power dissipation *2

150

200

Junction temperature

150

Range of storage temperature

*1ꢀCharacteristics of built-in transistor

*2 Each terminal mounted on a reference land

Tstg

-55 to +150

www.rohm.com

2011.09 - Rev.A

1/2

Data Sheet

DTA014YM / DTA014YEB / DTA014YUB ꢀ

Electrical characteristics (Ta=25C)

Parameter

Min.

Typ.

Test Conditions

Symbol

V_I(off)

V_I(on)

V_O(on)

I_I

Max.

-0.5

Unit

_CC=-5V / I_O=-100uA

-1.7

Input voltage

V_O=-0.3V / I_O=-5mA

I_O=-5mA / I_I=0.5mA

V_I=-5V

Output voltage

Input current

-0.07

-0.15

-0.88

-500

_CC=-50V / V_I=0V

V_O=-10V / I_O=-5mA

_CE=-10V /I_E=5mA

f=100MHz

Output current

DC current gain

I_O(off)

G_I

Transition frequency *

f_T

250

MHz

Input resistance

R₁

kΩ

Resistance ratio

3.7

4.7

R₂/R₁

5.7

* Characteristics of built-in transistor

Electrical characteristics curves

-10

-1

-100

V_CC=-5V

V_O=-0.3V

Ta=-40ºC

Ta=25ºC

Ta=75ºC

Ta=125ºC

-10

-1

Ta=125ºC

Ta=75ºC

Ta=25ºC

Ta=-40ºC

-0.1

-0.01

-0.001

-0.1

-0.5

-1

-1.5

-2

-2.5

-3

-0.1

-1

-10

-100

INPUT VOLTAGE : V_I(off)(V)

OUTPUT CURRENT : I_O(mA)

Fig.1 Input Voltage vs. Output Current

(ON characteristics)

Fig.2 Input Voltage vs. Output Current

(OFF characteristics)

-1

1000

Ta=125ºC

I_O/I_I=10

V_O=-10V

Ta=75ºC

Ta=25ºC

Ta=-40ºC

Ta=125ºC

Ta=75ºC

Ta=25ºC

Ta=-40ºC

-0.1

100

-0.01

-0.001

-0.1

-1

-10

-100

-0.1

-1

-10

-100

OUTPUT CURRNET : I_O(mA)

OUTPUT CURRENT : I_O(mA)

Fig.3 DC Current Gain vs. Output Current

Fig.4 Output Voltage vs. Output Current

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2/2

2011.09 - Rev.A

Notice

N o t e s

Thank you for your accessing to ROHM product informations.

More detail product informations and catalogs are available, please contact us.

ROHM Customer Support System

http://www.rohm.com/contact/

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