DTA044TEB [ROHM]

100mA/-50V Digital transistors(with built-in resistors); 百毫安/ -50V数字晶体管（具有内置电阻）


型号：	DTA044TEB
厂家：	ROHM
描述：	100mA/-50V Digital transistors(with built-in resistors) 百毫安/ -50V数字晶体管（具有内置电阻）晶体数字晶体管
文件：	总3页 (文件大小：393K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

-100mA/-50V Digital transistors(with built-in resistors)

DTA044TM / DTA044TEB / DTA044TUB

Features

ꢀꢀꢀ Dimensions (Unit : mm)

1) Built-in input resistor enables the direct control of base terminal

by input voltage without external resistor.

(See Inner circuit)

VMT3

2) The bias resistors consist of thin-film resistors with complete

isolation to allow positive biasing of the input.

They also have the advantage of almost completely

eliminating parasitic effects.

Abbreviated symbol : 08

3) Only the on/off conditions need to be set for operation,

making the device design easy.

EMT3F

(3)

Structure

PNP epitaxial planar silicon transistor

(Resistor built-in type)

(1)

(2)

Abbreviated symbol : 08

UMT3F

2.0

0.9

0.32

Applications

(3)

Inverter, Interface, Driver

(1)

(2)

0.13

0.65 0.65

1.3

Abbreviated symbol : 08

Packaging specifications

ꢀꢀꢀInner circuit

Package

VMT3

Taping

T2L

EMT3F

Taping

UMT3F

Taping

R₁

Packaging Type

Code

Type

B : Base

Basic ordering

unit (pieces)

C : Collector

E : Emitter

8000

3000

DTA044ＴM

DTA044ＴEB

DTA044ＴUB

○

R₁=47kΩ

○

Absolute maximum (Ta=25C)

Limits(DTA044T□)

Parameter

Symbol

Unit

-50

-5

V_CBO

V_CEO

V_EBO

I_C(max)

P_D

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

mW *

C

Collector current

-60

Power dissipation *1

150

200

Junction temperature

Tｊ

150

Range of storage temperature

*1ꢀEach terminal mounted on a recommended land

Tstg

-55 to +150

C

www.rohm.com

2010.09 - Rev.A

1/2

Data Sheet

DTA044TM / DTA044TEB / DTA044TUB

ꢀ

Electrical characteristics (Ta=25C)

Parameter

Min.

-50

-5

Typ.

Test Conditions

I_C=50μA

Symbol

BV_CBO

Max.

Unit

Collector-base breakdown voltage

I_C=1ｍA

I_E=50μA

V_CB=-50V

Collector-emitter breakdown voltage BV_CEO

Emitter-base breakdown voltage

Collector cutoff current

BV_EBO

I_CBO

-500

-0.15

600

_EB=-4V

Emitter cutoff current

I_EBO

-0.07

I_C=-5mA / I_B=-0.5mA

V_CE=-10V / I_C=-5mA

DC current transfer ratio

ｈ_FE

Collector-emitter saturation voltage

V_CE(sat)

100

_CE=-10V / I_E=5mA

Transition frequency

Output capacitance

250

MHz

f=100MHｚ

32.9

Cob

61.1

kΩ

Electrical characteristics curves

-1

-0.1

1000

I_C/I_B=10

V_CE=-10.0V

Ta=125ºC

Ta=75ºC

Ta=25ºC

Ta=-40ºC

100

Ta=125ºC

Ta=75ºC

Ta=25ºC

Ta=-40ºC

-0.01

-0.001

-0.1

-1

-10

-100

-0.01

-0.1

-1

-10

COLLECTOR CURRENT : I_C(mA)

COLLECTOR CURRNET : I_C(mA)

Fig.1 DC Current Gain vs. Collector Current

Fig.2 Collector Saturation Voltage vs. Collector Current

www.rohm.com

2/2

2010.09 - Rev.A

Notice

N o t e s

No copying or reproduction of this document, in part or in whole, is permitted without the

consent of ROHM Co.,Ltd.

The content speciﬁed herein is subject to change for improvement without notice.

The content speciﬁed herein is for the purpose of introducing ROHM's products (hereinafter

"Products"). If you wish to use any such Product, please be sure to refer to the speciﬁcations,

which can be obtained from ROHM upon request.

Examples of application circuits, circuit constants and any other information contained herein

illustrate the standard usage and operations of the Products. The peripheral conditions must

be taken into account when designing circuits for mass production.

Great care was taken in ensuring the accuracy of the information speciﬁed in this document.

However, should you incur any damage arising from any inaccuracy or misprint of such

information, ROHM shall bear no responsibility for such damage.

The technical information speciﬁed herein is intended only to show the typical functions of and

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The Products speciﬁed in this document are intended to be used with general-use electronic

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R1010

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