DTA144GUAT106 [ROHM]

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, UMT3, 3 PIN;


型号：	DTA144GUAT106
厂家：	ROHM
描述：	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, UMT3, 3 PIN 开关光电二极管晶体管
文件：	总6页 (文件大小：1003K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

DTA144G series

PNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors)

Datasheet

llOutline

Parameter

Value

-50V

UMT3

SMT3

CEO

-100mA

ꢀ

47kΩ

DTA144GUA

DTA144GKA

SOT-346(SC-59)

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SOT-323(SC-70)

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llFeatures

1) Built-In Biasing Resistor

llInner circuit

2) Built-in bias resistors enable the configuration of

ꢀan inverter circuit without connecting external

ꢀinput resistors (see inner circuit) .

3) The bias resistors consist of thin-film resistors

ꢀwith complete isolation to allow negative biasing

ꢀof the input. They also have the advantage of

ꢀcompletely eliminating parasitic effects.

4) Complementary NPN Types: DTC144G series

5) Lead Free/RoHS Compliant.

B: BASE

C: COLLECTOR

E: EMITTER

llApplication

Switching circuit, Inverter circuit, Interface circuit,

Driver circuit

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llPackaging specifications

Basic

Package

size

Taping

code

Reel size Tape width

Part No.

Package

ordering

Marking

(mm)

unit.(pcs)

DTA144GUA

DTA144GKA

UMT3

SMT3

2021

2928

T106

T146

180

3000

K16

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www.rohm.com

1/5

20121023 - Rev.001

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DTA144G series

Datasheet

llAbsolute maximum ratings (T_a= 25°C)

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_C

Values

-50

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

-50

-5

Collector current

-100

200

DTA144GUA

DTA144GKA

P_D

Power dissipation

200

T_j

Junction temperature

150

℃

T_stg

Range of storage temperature

-55 to +150

llElectrical characteristics (T_a= 25°C)

Values

Parameter

Symbol

Conditions

Unit

Min.

-50

Typ.

Max.

Collector-base breakdown

voltage

BV_CBO

BV_CEO

I = -50μA

Collector-emitter breakdown

voltage

I = -1mA

-50

BV_EBO

I_CBO

I = -160μA

Emitter-base breakdown voltage

Collector cut-off current

-5

μA

= -50V

= -4V

-0.5

-130

-0.3

I_EBO

Emitter cut-off current

-65

Collector-emitter saturation voltage

V_CE(sat)I / I = -10mA / -0.5mA

h_FE

= -5V, I =-5mA

DC current gain

32.9

Emitter-base resistance

61.1

kΩ

= -10V, I = 5mA,

f_T

Transition frequency

250

MHz

f = 100MHz

*1 Each terminal mounted on a reference footprint

*2 Characteristics of built-in transistor

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www.rohm.com

2/5

20121023 - Rev.001

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DTA144G series

Datasheet

llElectrical characteristic curves (T =25°C)

Fig.1 Grounded emitter propagation characteristics

Fig.2 Grounded emitter output characteristics

Fig.3 DC Current gain vs. Collector Current

Fig.4 Collector-emitter saturation voltage vs.

Collector Current

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3/5

20121023 - Rev.001

DTA144G series

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Datasheet

llDimensions

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www.rohm.com

4/5

20121023 - Rev.001

DTA144G series

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Datasheet

llDimensions

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5/5

20121023 - Rev.001

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