DTA144VKA [ROHM]

Digital transistor (built-in resistors); 数字晶体管（内置电阻）


型号：	DTA144VKA
厂家：	ROHM
描述：	Digital transistor (built-in resistors) 数字晶体管（内置电阻）晶体小信号双极晶体管数字晶体管开关光电二极管
文件：	总1页 (文件大小：60K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

DTA144VUA / DTA144VKA / DTA144VSA

Transistors

Digital transistor (built-in resistors)

DTA144VUA / DTA144VKA / DTA144VSA

!Features

!External dimensions (Units : mm)

1) Built-in bias resistors enable the configuration of an

inverter circuit without connecting external input

resistors.

2) The bias resistors consist of thin-film resistors with

complete isolation to allow positive biasing of the input,

and parasitic effects are almost completely eliminated.

3) Only the on / off conditions need to be set for

operation, making device design easy.

DTA144VUA

1.25

2.1

(

)

(1) Emitter Source

(

)

(2) Base Gate

(3) Collector Drain

(

ROHM : UMT3

EIAJ : SC-70

0.1to0.4

Each lead has same dimensions

DTA144VKA

4) Higher mounting densities can be achieved.

1.6

2.8

!Equivalent circuit

(1) Emitter(Source)

(2) Base(Gate)

(3) Collector(Drain)

OUT

ROHM : SMT3

EIAJ : SC-59

0.3to0.6

Each lead has same dimensions

GND(+)

OUT

DTA144VSA

GND(+)

0.45

(1) Emitter

(2) Collector

(3) Base

0.45

2.5 0.5

ROHM : SPT

EIAJ : SC-72

(

) ( ) ( )

1 2 3

Taping specifications

!Packaging, marking and packaging specifications

!Absolute maximum ratings (Ta = 25°C)

Type

DTA144VUA

UMT3

156

DTA144VKA

SMT3

E56

DTA144VSA

Parameter

Symbol

Limits

Unit

Package

Marking

SPT

−

Supply voltage

Input voltage

−50

−40~+15

Packaging code

Basic ordering unit (pieces)

T106

3000

T146

3000

5000

−30

−10

Output current

C(Max.)

DTA144VUA / DTA144VKA

200

Power

dissipation

DTA144VSA

300

Junction temperature

Storage temperature

150

°C

Tstg

−55~+150

!Electrical characteristics (Ta = 25°C)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

I(off)

I(on)

−

−6

−

−1

−

−0.3

−0.16

−0.5

−

61.1

0.26

−

CC=−5V , I

=−0.3V , I

=−10mA , I

=−5V

CC=−50V , V

=−5mA , V =−5V

=−100µA

Input voltage

=−2mA

Output voltage

Input current

O(on)

−0.1

µA

−

kΩ

−

=−0.5mA

−

Output current

DC current gain

Input resistance

Resistance ratio

Transition frequency

O(off)

−

I=0V

32.9

0.17

−

0.21

250

−

2/R1

MHz

CE=−10V , IE=5mA , f=100MHz

∗

Transition frequency of the device.

∗

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