DTC014YUB [ROHM]
100mA/50V Digital transistors(with built-in resistors); 百毫安/ 50V数字晶体管（带内置式电阻器）
| 型号： | DTC014YUB |
| 厂家： | 
ROHM |
| 描述： | 100mA/50V Digital transistors(with built-in resistors) |
| 文件： | 总3页 (文件大小：288K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
100mA/50V Digital transistors(with built-in resistors)
DTC014YM / DTC014YEB / DTC014YUB
Features
Dimensions (Unit : mm)
1) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external input resistors.
(See equivalent circuit)
VMT3
2) The bias resistors consist of thin-film resistors with complete
isolation to allow negative biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
Abbreviated symbol : 44
EMT3F
3) Only the on/off conditions need to be set for operation,
making the device design easy.
(3)
(1)
(2)
Structure
NPN epitaxial planar silicon transistor
(Resistor built-in type)
Abbreviated symbol : 44
2.0
UMT3F
0.9
0.32
(3)
Applications
Inverter, Interface, Driver
(1)
(2)
0.13
0.65 0.65
1.3
Abbreviated symbol : 44
Packaging specifications and hFE
Equivalent circuit
Package
VMT3
Taping
T2L
EMT3F
Taping
TL
UMT3F
Taping
TL
OUT
GND
R
1
Packaging Type
Code
IN
Type
R
2
Basic ordering
unit (pieces)
8000
3000
3000
IN
OUT
DTC014YM
DTC014YEB
DTC014YUB
-
○
-
-
-
○
-
GND
-
○
R1=10k,R2=47k
Absolute maximum (Ta=25C)
Limits(DTC014Y□)
Parameter
Symbol
VCC
Unit
M
EB
50
40
-6
UB
Supply voltage
Input voltage
V
V
VIN
V
IC(max)
IO
Collector current *1
100
70
mA
mA
mW
C
C
Output current
PD
Power dissipation *2
150
200
Junction temperature
Tj
150
Range of storage temperature
*1ꢀCharacteristics of built-in transistor
*2 Each terminal mounted on a reference land
Tstg
-55 to +150
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©2011 ROHM Co., Ltd. All rights reserved.
2011.08 - Rev.A
1/2
Data Sheet
DTC014YM / DTC014YEB / DTC014YUB ꢀ
Electrical characteristics (Ta=25C)
Parameter
Min.
Typ.
Test Conditions
Symbol
VI(off)
VI(on)
VO(on)
II
Max.
0.5
-
Unit
V
V
CC=5V / IO=100uA
-
1.7
-
-
Input voltage
VO=0.3V / IO=5mA
IO=5mA / II=0.5mA
VI=5V
-
V
Output voltage
Input current
0.05
0.15
0.88
500
-
V
-
-
-
-
mA
nA
-
VCC=50V / VI=0V
VO=10V / IO=5mA
Output current
DC current gain
IO(off)
GI
-
80
V
CE=10V /IE=-5mA
Transition frequency *
fT
-
250
-
MHz
f=100MHz
Input resistance
R1
7
10
13
k
Resistance ratio
3.7
4.7
R2/R1
5.7
-
* Characteristics of built-in transistor
Electrical characteristics curves
100
10
VO=0.3V
VCC=5V
1
0.1
10
1
Ta=-40ºC
Ta=25ºC
Ta=75ºC
Ta=125ºC
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta=-40ºC
0.01
0.001
0.1
0.1
1
10
100
0
0.5
1
1.5
2
2.5
3
OUTPUT CURRENT : IO (mA)
INPUT VOLTAGE : VI(off) (V)
Fig.1 Input Voltage vs. Output Current
(ON characteristics)
Fig.2 Input Voltage vs. Output Current
(OFF characteristics)
1
1000
VO=10V
IO/II=10
0.1
100
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta=125ºC
0.01
10
Ta=-40ºC
Ta=75ºC
Ta=25ºC
Ta=-40ºC
0.001
1
0.1
1
10
100
0.1
1
10
100
OUTPUT CURRNET : IO (mA)
OUTPUT CURRENT : IO (mA)
Fig.3 DC Current Gain vs. Output Current
Fig.4 Output Voltage vs. Output Current
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© 2011 ROHM Co., Ltd. All rights reserved.
2/2
2011.08 - Rev.A
Notice
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© 2011 ROHM Co., Ltd. All rights reserved.
R1120
A
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