DTC115THT2L [ROHM]
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SC-89, 3 PIN;
| 型号： | DTC115THT2L |
| 厂家： | 
ROHM |
| 描述： | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SC-89, 3 PIN |
| 文件： | 总2页 (文件大小：59K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DTC115TH / DTC115TUA / DTC115TKA / DTC115TSA
Transistors
Digital transistors (built in resistor)
DTC115TH / DTC115TUA / DT115TKA / DTC115TSA
!External dimensions (Units : mm)
!Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors.
2) The bias resistors consist of thin-film resistors with
complete isolation to allow negative biasing of the
input, and parasitic effects are almost completely
eliminated.
DTC115TH
1.6
0.85
(
)
1
(
)
2
(
)
3
(1) Emitter
(2) Base
(3) Collector
ROHM : EMT3H
EIAJ : SC-89
3) Only the on / off conditions need to be set for
operation, making device design easy.
4) Higher mounting densities can be achieved.
DTC115TUA
1.25
2.1
!Equivalent circuit
C
0.1to0.4
B
R1
E
Each lead has same dimensions
(1) Emitter
(2) Base
(3) Collector
ROHM : UMT3
EIAJ : SC-70
E : Emitter
C : Collector
B : Base
DTC115TKA
1.6
2.8
0.3to0.6
Each lead has same dimensions
(1) Emitter
(2) Base
(3) Collector
ROHM : SMT3
EIAJ : SC-59
DTC115TSA
4
2
0.45
0.45
2.5 0.5
5
2
( )
1
(
)
( )
3
Taping specifications
(1) Emitter
(2) Collector
(3) Base
ROHM : SPT
EIAJ : SC-72
DTC115TH / DTC115TUA / DTC115TKA / DTC115TSA
Transistors
!Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
50
Unit
V
Collector-base voltage
VCBO
VCEO
VEBO
Collector-emitter voltage
Emitter-base voltage
Collector current
50
V
5
V
I
C
100
mA
DTC115TH
150
200
Collector power
dissipation
mW
DTC115TUA / DTC115TKA
DTC115TSA
Pc
300
Junction temperature
Storage temperature
Tj
150
˚C
˚C
Tstg
−55~+150
!Packaging, marking, and packaging specifications
Part No.
DTC115TH
EMT3H
09
DTC115TUA
UMT3
09
DTC115TKA
SMT3
09
DTC115TSA
Package
Marking
SPT
-
Packaging code
T2L
T106
T146
TP
Basic ordering unit (pieces)
8000
3000
3000
5000
!Electrical characteristics (Ta=25°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
BVCBO
BVCEO
BVEBO
50
50
5
-
-
V
V
I
I
I
C
=
=
50µA
1mA
-
-
C
-
-
V
E
=
50µA
I
CBO
EBO
CE(sat)
FE
-
-
0.5
0.5
0.3
600
130
-
µA
µA
V
V
V
CB
EB
=
50V
Emitter cutoff current
I
-
-
=
4V
Collector-emitter saturation voltage
DC current transfer ratio
Input resistance
V
-
-
I
I
C/I
B
=
1mA/0.1mA
h
100
70
-
250
100
250
-
C=
1mA, VCE 5V
=
R1
kΩ
MHz
-
Transition frequency
f
T
V
CE
=
10V, I
E
=−5mA, f
=
100MHz
∗
Transition frequency of the device.
∗
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