EMF17T2R [ROHM]
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon, EMT6, 6 PIN;
| 型号： | EMF17T2R |
| 厂家： | 
ROHM |
| 描述： | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon, EMT6, 6 PIN 开关 光电二极管 晶体管 |
| 文件： | 总5页 (文件大小：80K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
EMF17 / UMF17N
Transistors
Power management (dual transistors)
EMF17 / UMF17N
2SA1774 and DTC123EE are housed independently in a EMT or UMT package.
zExternal dimensions (Unit : mm)
zApplication
Power management circuit
EMF17
( )
3
( )
2
( )
1
( )
4
( )
5
( )
6
zFeatures
1.2
1.6
1) Power switching circuit in a single package.
2) Mounting cost and area can be cut in half.
Each lead has same dimensions
ROHM : EMT6 Abbreviated symbol : F17
UMF17N
zStructure
Silicon epitaxial planar transistor
zEquivalent circuits
1.25
2.1
(3)
(2) (1)
DTr2
Tr1
0.1Min.
R1
Each lead has same dimensions
R2
ROHM : UMT6
EIAJ : SC-88
Abbreviated symbol :F17
(4)
(5)
(6)
R
1
=2.2kΩ
=2.2kΩ
R2
zPackage, marking, and packaging specifications
EMF17
EMT6
F17
Type
Package
UMF17N
UMT6
F17
Marking
Code
T2R
TR
Basic ordering unit(pieces)
8000
3000
Rev.A
1/4
EMF17 / UMF17N
Transistors
zAbsolute maximum ratings (Ta=25°C)
Tr1
Limits
−60
Parameter
Symbol
Unit
V
VCBO
VCEO
VEBO
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
−50
V
−6
V
I
C
−150
mA
mW
°C
°C
Collector current
∗
Collector power dissipation
P
C
150 (TOTAL)
150
Tj
Junction temperature
Storage temperature
Tstg
−55 to +150
∗ 120mW per element must not be exceeded.
DTr2
Parameter
Supply voltage
Symbol
Limits
50
Unit
V
VCC
Input voltage
Collector current
V
IN
−10 to +20
100
100
150(TOTAL)
150
V
∗1
∗2
I
C
mA
mA
mW
°C
I
O
Output current
Power dissipation
P
Tj
Tstg
C
Junction temperature
Range of storage temperature
∗1 Characteristics of built-in transistor.
−55 to +150
°C
∗2 Each terminal mounted on a recommended land.
zElectrical characteristics (Ta=25°C)
Tr1
Parameter
Symbol Min.
Typ.
−
Max.
−
Unit
V
Conditions
BVCBO
BVCEO
BVEBO
−60
−50
−6
−
I
I
I
C
C
E
= −50µA
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
−
−
V
= −1mA
= −50µA
CB = −60V
EB = −6V
−
−
V
I
CBO
EBO
CE(sat)
FE
−
−0.1
−0.1
−0.5
390
−
µA
µA
V
V
V
I
−
−
V
−
−
I
C/I
B
= −50mA/−5mA
= −1mA
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
h
180
−
−
−
V
V
V
CE = −6V, I
C
f
T
140
4
MHz
pF
CE = −12V, I
CB = −12V, I
E
= 2mA, f = 100MHz
= 0A, f = 1MHz
Cob
−
5
E
Output capacitance
DTr2
Parameter
Symbol
Min.
Typ.
Max.
Unit
V
Conditions
V
V
I(off)
−
3.0
−
−
−
−
−
100
−
−
−
250
2.2
1.0
0.5
−
300
3.8
0.5
−
V
V
V
V
V
V
V
CC=5V, I
O
=100µA
=20mA
Input voltage
I(on)
V
O
=0.3V, I
O
Output voltage
V
O(on)
mV
mA
µA
−
MHz
kΩ
−
O
=10mA, I
I
=0.5mA
Input current
I
I
I
=5V
CC=50V, V
=5V, I
CE=10V, I
Output current
I
O(off)
I
=0V
DC current gain
G
I
20
O
O
=20mA
Transition frequency
Input resistance
Resistance ratio
∗ Characteristics of built-in transistor.
f
T
−
1.54
0.8
−
2.86
E
=−5mA, f=100MHz
∗
R1
−
−
R
2/R1
1.2
Rev.A
2/4
EMF17 / UMF17N
Transistors
zElectrical characteristic curves
Tr1
-35.0
-10
-8
-100
-80
-50
V
CE = −6V
Ta = 25°C
Ta = 25°C
Ta = 100°C
25°C
-31.5
-28.0
-24.5
-21.0
-17.5
-14.0
-10.5
-7.0
-20
-10
-500
-450
-400
-350
-300
−40°C
-5
-250
-200
-6
-4
-2
-60
-40
-20
-2
-1
-150
-100
-0.5
-50µA
-3.5µA
-0.2
-0.1
I
B
= 0
-2.0
IB = 0
0
-0.4
-0.8
-1.2
-1.6
0
-1
-2
-3
-4
-5
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6
BASE TO EMITTER VOLTAGE : VBE (V)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.2 Grounded emitter output
Fig.3 Grounded emitter output
Fig.1 Grounded emitter propagation
characteristics
characteristics ( Ι )
characteristics ( ΙΙ )
500
500
-1
Ta = 100°C
V
CE = -5V
-3V
Ta = 25°C
Ta = 25°C
25°C
-1V
-0.5
-40°C
200
100
50
200
100
-0.2
-0.1
I
C/I
B
= 50
20
10
50
-0.05
V
CE = -6V
-0.2 -0.5 -1 -2
COLLECTOR CURRENT :
-5 -10 -20 -50 -100
-0.2
-0.5 -1
-2
-5 -10 -20
-50 -100
-0.2 -0.5 -1 -2
-5 -10 -20
-50 -100
COLLECTOR CURRENT : I (mA)
C
IC (mA)
COLLECTOR CURRENT :
IC (mA)
Fig.5 DC current gain vs. collector
Fig.6 Collector-emitter saturation
voltage vs. collector current ( Ι )
Fig.4 DC current gain vs. collector
current ( ΙΙ )
current ( Ι )
1000
-1
20
10
Ta = 25°C
CE = -12V
lC/lB = 10
Ta = 25°C
V
f
I
I
= 1MHz
E
= 0A
= 0A
500
-0.5
C
200
100
-0.2
-0.1
5
2
Ta = 100°C
25°C
-40°C
-0.05
50
0.5
1
2
5
10
20
50 100
-0.5
-1
-2
-5
-10
-20
-0.2 -0.5 -1
-2
-5 -10 -20
-50 -100
EMITTER CURRENT : I
E
(mA)
COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE : VEB (V)
COLLECTOR CURRENT : I
C
(mA)
Fig.8 Gain bandwidth product vs.
emitter current
Fig.9 Collector output capacitance vs.
collector-base voltage
Fig.7 Collector-emitter saturation
voltage vs. collector current ( ΙΙ )
Emitter input capacitance vs.
emitter-base voltage
Rev.A
3/4
EMF17 / UMF17N
Transistors
DTr2
100
10m
5m
1k
V
CC=5V
VO=0.3V
V
O
=5V
500
50
2m
Ta=100°C
25°C
−40°C
20
10
200
100
1m
500µ
Ta=100°C
25°C
−40°C
Ta=−40°C
25°C
100°C
200µ
50
5
100µ
50µ
20
10
5
2
1
20µ
10µ
5µ
500m
200m
100m
2
1
2µ
1µ
0
0.5
1.0
1.5
2.0
2.5
3.0
100µ 200µ
500µ 1m
2m
5m 10m 20m
50m 100m
100µ 200µ
500µ 1m
2m
5m 10m 20m
50m 100m
OUTPUT CURRENT : I (A)
O
INPUT VOLTAGE : VI(off) (V)
OUTPUT CURRENT : I (A)
O
Fig.10 Output current vs. input voltage
(OFF characteristics)
Fig.9 Input voltage vs. output current
(ON characteristics)
Fig.11 DC current gain vs. output
current
1
lO
/lI
=20
500m
200m
100m
50m
Ta=100°C
25°C
−40°C
20m
10m
5m
2m
1m
100µ 200µ
500µ 1m
2m
5m 10m 20m
50m 100m
OUTPUT CURRENT : I (A)
O
Fig.12 Output voltage vs. output
current
Rev.A
4/4
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
相关型号：
EMF19T2R
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, EMT6, 6 PIN
ROHM
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