EMG11 [ROHM]

Emitter common (dual digital transistors); 发射器通用(双数字晶体管)
EMG11
型号: EMG11
厂家: ROHM    ROHM
描述:

Emitter common (dual digital transistors)
发射器通用(双数字晶体管)

晶体 数字晶体管
文件: 总1页 (文件大小:58K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
EMG11 / UMG11N / FMG11A  
Transistors  
Emitter common (dual digital transistors)  
EMG11 / UMG11N / FMG11A  
!External dimensions (Units : mm)  
!Features  
1) Two DTA123Js chips in a EMT or UMT or SMT  
package.  
EMG11  
(
(
)
)
( )  
3
( )  
2
( )  
1
4
5
1.2  
1.6  
!Equivalent circuit  
Each lead has same dimensions  
EMG11 / UMG11N  
FMG11A  
ROHM : EMT5  
UMG11N  
(3)  
(2)  
(1)  
(3)  
(4)  
(5)  
R1  
R
1
R1  
R1  
R2  
R2  
R2  
R2  
(4)  
(5)/(6)  
(2)  
(1)  
1.25  
2.1  
!Package, marking, and packaging specifications  
Type  
EMG11  
EMT5  
G11  
UMG11N FMG11A  
0.1Min.  
Package  
UMT5  
G11  
TR  
SMT5  
G11  
Marking  
Each lead has same dimensions  
ROHM : UMT5  
EIAJ : SC-88A  
Code  
T2R  
T148  
3000  
Basic ordering unit (pieces)  
8000  
3000  
FMG11A  
!Absolute maximum ratings (Ta = 25°C)  
Parameter  
Symbol  
Limits  
Unit  
Supply voltage  
VCC  
50  
V
12  
5
1.6  
2.8  
Input voltage  
VIN  
V
Output current  
Power dissipation  
I
O
100  
mA  
150(TOTAL)  
300(TOTAL)  
1  
2  
Pd  
mW  
0.3Min.  
Storage temperature  
Tstg  
50~  
+150  
°C  
Each lead has same dimensions  
1 120mW per element must not be exceeded.  
2 200mW per element must not be exceeded.  
ROHM : SMT5  
EIAJ : SC-74A  
!Electrical characteristics (Ta = 25°C)  
Parameter  
Symbol  
Min.  
Typ.  
Max.  
0.5  
Conditions  
Unit  
V
I (off)  
1.1  
V
CC=5V, I  
=0.3V, I  
=5mA, I =0.25mA  
=5V  
CC=50V, V  
=10mA, V  
O
=100µA  
Input voltage  
V
VI (on)  
VO  
O
=5mA  
Output voltage  
Input current  
VO (on)  
0.1  
0.3  
3.6  
0.5  
V
mA  
µA  
kΩ  
MHz  
I
O
I
I
I
V
V
I
Output current  
DC current gain  
Input resistance  
I
O (off)  
I
=0V  
=5V  
G
I
80  
I
O
O
R1  
2.2  
250  
21  
Transition frequency  
f
T
17  
26  
V
CE=10V, I  
E
=−5mA, f=100MHz  
Resistance ratio  
R2  
/ R1  
Transition frequency of the device.  

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