EMT18_10 [ROHM]
General purpose transistors(dual transistors); 通用晶体管（双晶体管）
| 型号： | EMT18_10 |
| 厂家： | 
ROHM |
| 描述： | General purpose transistors(dual transistors) |
| 文件： | 总4页 (文件大小：710K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
General purpose transistors(dual transistors)
EMT18 / UMT18N / IMT18
Features
Dimensions (Unit : mm)
1) Two 2SA2018 chips in a EMT package.
2) Mounting possible with EMT3 or UMT3 or SMT3
automatic mounting machines.
3) Transistor elements are independent, eliminating
interference.
EMT18
Each lead has same dimensions
Abbreviated symbol : T18
ROHM : EMT6
Structure
Epitaxial planar type
PNP silicon transistor
UMT18N
The following characteristics apply to both Tr1 and Tr2.
Each lead has same dimensions
Abbreviated symbol : T18
Inner circuit
ROHM : UMT6
EIAJ : SC-88
EMT18 / UMT18N
IMT18
IMT18
(3) (2) (1)
(4) (5) (6)
Tr1
Tr1
Tr2
Tr2
(4) (5) (6)
(3) (2) (1)
Each lead has same dimensions
Abbreviated symbol : T18
ROHM : SMT6
EIAJ : SC-74
JEDEC : SOT-457
Absolute maximum ratings (Ta=25C)
Symbol
VCBO
VCEO
VEBO
IC
Limits
−15
−12
−6
−500
1.0
Unit
V
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
V
V
mA
A
Collector current
∗1
ICP
EMT6
150 (TOTAL)∗2
Power dissipation
PC UMT6
SMT6
Tj
mW
300 (TOTAL)∗3
150
Junction temperature
Storage temperature
°C
°C
Tstg
−55 to +150
∗1 Single pulse P =1ms
W
∗2 120mW per element must not be exceeded.
∗3 200mW per element must not be exceeded.
www.rohm.com
2010.08 - Rev.C
1/3
c
○ 2010 ROHM Co., Ltd. All rights reserved.
EMT18 / UMT18N / IMT18
Data Sheet
Electrical characteristics (Ta=25C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Collector-base breakdown voltage
BVCBO −15
−
−
−
−
−
−
−
−
V
V
V
IC= −10μA
IC= −1mA
IE= −10μA
Collector-emitter breakdown voltage BVCEO −12
Emitter-base breakdown voltage
BVEBO
−6
−
Collector cutoff current
ICBO
−0.1 μA VCB= −15V
−0.1 μA VCB= −6V
Emitter cutoff current
IEBO
−
Collector-emitter saturation voltage VCE (sat)
−
−100 −250 mV IC / IB= −200mA / −10mA
DC current transfer ratio
Transition frequency
Output capacitance
hFE
fT
270
−
260
680
−
VCE= −2V, IC= −10mA
−
−
−
−
MHz VCE= −2V, IE=10mA, f=100MHz
pF VCB= −10V, IE=0A, f=1MHz
Cob
6.5
Packaging specifications and hFE
Package name
Taping
TR
Type
Code
T2R
T110
3000
−
Basic ordering unit (pieces)
8000
3000
−
EMT18
UMT18N
IMT18
−
−
−
−
Electrical characteristic curves
1000
1000
1000
500
VCE=2V
VCE=2V
IC / IB=20
500
500
200
200
100
50
200
100
50
Ta=125∞C
Ta=125∞C
Ta=25∞C
Ta= −40∞C
Ta=25∞C
100
Ta=125°C
Ta=25°C
Ta= −40°C
Ta= −40∞C
50
20
10
5
20
10
5
20
10
5
2
1
2
1
2
1
0
0.5
1.0
1.5
1
2
5
10 20
50 100 200 500 1000
1
2
5
10 20
50 100 200 500 1000
BASE TO EMITTER VOLTAGE : VBE (V)
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
Fig.1 Grounded Emitter Propagation
Characteristics
Fig.2 DC Current Gain vs.
Collector Current
Fig.3 Collector-Emitter Saturation
Voltage vs.
Collector Current (Ι)
www.rohm.com
2010.08 - Rev.C
2/3
c
○ 2010 ROHM Co., Ltd. All rights reserved.
EMT18 / UMT18N / IMT18
Data Sheet
10000
5000
1000
500
1000
IC / IB=20
VCE=2V
Ta=25∞C
Ta=25∞C
500
Ta= −40°C
Ta=25°C
Ta=125°C
2000
1000
500
200
100
50
200
100
50
IC / IB=50
IC / IB=20
200
100
50
20
10
5
20
IC / IB=10
10
5
20
2
1
2
1
101
2
5
10 20
50 100 200 500 1000
1
2
5
10 20
50 100 200 500 1000
1
2
5
10 20
50 100 200 500 1000
COLLECTOR CURRENT : IC (mA)
EMITTER CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
Fig.5 Base-Emitter Saturation
Voltage vs.Collecter Current
Fig.6 Gain Bandwidth Product vs.
Emitter Current
Fig.4 Collector-Emitter Saturation
Voltage vs.
Collector Current (ΙΙ)
1000
IE=0A
f=1MHz
Ta=25∞C
500
200
100
50
Cib
20
10
5
Cob
2
1
0.1 0.2 0.5
1
2
5
10 20
50 100
EMITTER TO BASE VOLTAGE : VEB (V)
Fig.7 Collector Output Capacitance vs.
Collector-Base Voltage
Emitter Input Capacitance vs.
Emitter-Base Voltage
www.rohm.com
2010.08 - Rev.C
3/3
c
○ 2010 ROHM Co., Ltd. All rights reserved.
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