EMX4_1 [ROHM]

High transition frequency (dual transistors); 高转换频率(双晶体管)
EMX4_1
型号: EMX4_1
厂家: ROHM    ROHM
描述:

High transition frequency (dual transistors)
高转换频率(双晶体管)

晶体 晶体管
文件: 总4页 (文件大小:108K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
EMX4 / UMX4N / IMX4  
Transistors  
High transition frequency (dual transistors)  
EMX4 / UMX4N / IMX4  
zDimensions (Unit : mm)  
zFeatures  
1) Two 2SC3837K chips in a EMT or UMT or SMT package.  
2) High transition frequency. (fT=1.5GHz)  
3) Low output capacitance. (Cob=0.9pF)  
EMX4  
zEquivalent circuits  
EMX4 / UMX4N  
IMX4  
(3) (2)  
(1)  
(4) (5)  
(6)  
ROHM  
:
EMT6  
Each lead has same dimensions  
UMX4N  
(4)  
(5)  
(6)  
(3)  
(2)  
(1)  
zAbsolute maximum ratings (Ta=25°C)  
Parameter  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
Symbol  
Limits  
Unit  
V
ROHM  
:
UMT6  
Each lead has same dimensions  
EIAJ  
: SC-88  
VCBO  
VCEO  
VEBO  
30  
20  
3
V
IMX4  
V
I
C
50  
mA  
EMX4 / UMX4N  
IMX4  
150(TOTAL)  
300(TOTAL)  
150  
1  
2  
Collector power  
dissipation  
Pc  
mW  
Junction temperature  
Storage temperature  
Tj  
°C  
°C  
Tstg  
55 to +150  
1 120mW per element must not be exceeded.  
2 200mW per element must not be exceeded.  
ROHM  
EIAJ  
:
SMT6  
Each lead has same dimensions  
:
SC-74  
zPackage, marking, and packaging specifications  
Type  
EMX4  
EMT6  
X4  
UMX4N  
UMT6  
X4  
IMX4  
SMT6  
X4  
Package  
Marking  
Code  
T2R  
TR  
T108  
3000  
Basic ordering unit (pieces)  
8000  
3000  
zElectrical characteristics (Ta=25°C)  
Parameter  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cutoff current  
Symbol  
Min.  
30  
20  
3
Typ.  
Max.  
Conditions  
Unit  
V
BVCBO  
I
C
=10µA  
=1mA  
BVCEO  
BVEBO  
V
I
I
C
V
E
=10µA  
CB=15V  
EB=2V  
I
CBO  
EBO  
FE  
CE(sat)  
0.5  
0.5  
180  
0.5  
1.6  
13  
µA  
µA  
V
V
V
Emitter cutoff current  
I
DC current transfer ratio  
56  
h
CE/I  
/I =20mA/4mA  
CE/I =10V/ 10mA, f=200MHz  
CB/f=10V/1MHz, I =0A  
C
=10V/10mA  
V
IC B  
Collector-emitter saturation voltage  
Transition frequency  
V
f
T
600  
1500  
0.95  
6
MHz  
pF  
ps  
dB  
V
V
E
Output capacitance  
Cob  
rbb' Cc  
NF  
E
Collector-base time constant  
VCB  
=10V, I  
C
=10mA , f=31.8MHz  
=2mA , f=200MHz , Rg=50Ω  
Noise factor  
4.5  
V
CE=12V, I  
C
Transition frequency of the device.  
This product might cause chip aging and breakdown under the large electrified environment.  
Please consider to design ESD protection circuit.  
Rev.C  
1/3  
EMX4 / UMX4N / IMX4  
Transistors  
zElectrical characteristic curves  
500  
5.0  
500  
Ta=25°C  
Ta=25°C  
Ta=25°C  
/I =5  
VCE=10V  
f=1MHz  
I
C B  
I =0A  
E
200  
100  
2.0  
1.0  
200  
100  
Cob  
50  
0.5  
50  
Cre  
20  
10  
0.2  
0.1  
20  
10  
0.1 0.2  
0.5  
1
2
5
10 20  
50  
0.1 0.2  
0.5  
1
2
5
10 20  
50  
0.1 0.2  
0.5  
1
2
5
10 20  
50  
COLLECTOR CURRENT : I  
C
(mA)  
COLLECTOR TO BASE VOLTAGE : VCB (V)  
COLLECTOR CURRENT : IC (mA)  
Fig.1 DC current gain vs. collector current  
Fig.3 Capacitance vs. reverse bias voltage  
Fig.2 Collector-emitter saturation voltage  
vs. collector current  
50  
5000  
Ta=25°C  
Ta=25°C  
V
CE=10V  
25  
20  
15  
V
CE=10V  
I
C=10mA  
20  
10  
2000  
1000  
5
500  
10  
5
2
200  
100  
Ta=25°C  
V
CE=10V  
f=31.8MHz  
10 20  
1
0
0.1 0.2  
0.5  
1 2  
5  
10 20  
50  
0.1 0.2  
0.5  
1
2
5
50  
0.1  
0.2  
0.5  
1
2
5
10  
EMITTER CURRENT : I  
E
(mA)  
COLLECTOR CURRENT : I  
C
(mA)  
FREQUENCY : f (GHz)  
Fig.4 Gain bandwidth product vs. emitter current  
Fig.5 Collector to base time constance  
vs. collector current  
Fig.6 Insertion gain vs. frequency  
30  
25  
Ta=25°C  
Ta=25°C  
Ta=25°C  
IC=2mA  
V
CE=12V  
VCE=12V  
f=200MHz  
f=200MHz  
f=200MHz  
25  
20  
20  
15  
10  
20  
10  
0
15  
10  
5
0
5
0
0
2
4
6
8
10  
12  
0.5  
1
2
5
10  
20  
50  
0.1 0.2  
0.5  
1
2
5
10 20  
50  
COLLECTOR CURRENT : Ic (mA)  
COLLECTOR TO EMITTER VOLTAGE : VCE (V)  
COLLECTOR CURRENT : IC (mA)  
Fig.7 Insertion gain vs. collector current  
Fig.8 Insertion gain vs. collector voltage  
Fig.9 Noise factor vs. collector current  
Rev.C  
2/3  
EMX4 / UMX4N / IMX4  
Transistors  
30  
25  
20  
Ta=25°C  
I =2mA  
C
f=200MHz  
15  
10  
5
0
0
2
4
6
8
10  
12  
COLLECTOR TO EMITTER VOLTAGE : VCE (V)  
Fig.10 Noise factor vs. collector voltage  
Rev.C  
3/3  
Appendix  
Notes  
No technical content pages of this document may be reproduced in any form or transmitted by any  
means without prior permission of ROHM CO.,LTD.  
The contents described herein are subject to change without notice. The specifications for the  
product described in this document are for reference only. Upon actual use, therefore, please request  
that specifications to be separately delivered.  
Application circuit diagrams and circuit constants contained herein are shown as examples of standard  
use and operation. Please pay careful attention to the peripheral conditions when designing circuits  
and deciding upon circuit constants in the set.  
Any data, including, but not limited to application circuit diagrams information, described herein  
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM  
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any  
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of  
whatsoever nature in the event of any such infringement, or arising from or connected with or related  
to the use of such devices.  
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or  
otherwise dispose of the same, no express or implied right or license to practice or commercially  
exploit any intellectual property rights or other proprietary rights owned or controlled by  
ROHM CO., LTD. is granted to any such buyer.  
Products listed in this document are no antiradiation design.  
The products listed in this document are designed to be used with ordinary electronic equipment or devices  
(such as audio visual equipment, office-automation equipment, communications devices, electrical  
appliances and electronic toys).  
Should you intend to use these products with equipment or devices which require an extremely high level  
of reliability and the malfunction of which would directly endanger human life (such as medical  
instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers  
and other safety devices), please be sure to consult with our sales representative in advance.  
It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance  
of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow  
for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in  
order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM  
cannot be held responsible for any damages arising from the use of the products under conditions out of the  
range of the specifications or due to non-compliance with the NOTES specified in this catalog.  
Thank you for your accessing to ROHM product informations.  
More detail product informations and catalogs are available, please contact your nearest sales office.  
THE AMERICAS / EUROPE / ASIA / JAPAN  
ROHM Customer Support System  
Contact us : webmaster@ rohm.co.jp  
www.rohm.com  
TEL : +81-75-311-2121  
FAX : +81-75-315-0172  
Copyright © 2008 ROHM CO.,LTD.  
21 Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan  
Appendix1-Rev2.0  

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