EMX5_10 [ROHM]

High transition frequency (dual transistors); 高转换频率（双晶体管）


型号：	EMX5_10
厂家：	ROHM
描述：	High transition frequency (dual transistors) 高转换频率（双晶体管）晶体晶体管
文件：	总3页 (文件大小：163K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

High transition frequency (dual transistors)

EMX5 / UMX5N / IMX5

Features

Dimensions (Unit : mm)

1) Two 2SC3838K chips in a EMT or UMT or SMT package.

2) High transition frequency. (f^T=3.2GHz)

EMX6

3) Low output capacitance. (Cob=0.9pF)

Inner circuits

EMX5 / UMX5N

IMX5

(3) (2)

(1)

(4) (5)

(6)

ROHM : EMT6

UMX5N

Each lead has same dimensions

Tr2

(4)

(5)

(6)

(3)

(2)

(1)

Absolute maximum ratings (Ta=25C)

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Symbol

Limits

Unit

VCBO

VCEO

VEBO

EMX5 / UMX5N

IMX5

150(TOTAL)

300(TOTAL)

150

∗1

∗2

Collector power

dissipation

ROHM : UMT6

EIAJ : SC-88

Each lead has same dimensions

Junction temperature

Storage temperature

°C

IMX5

Tstg

−55 to +150

∗1 120mW per element must not be exceeded.

∗2 200mW per element must not be exceeded.

Package, marking, and packaging specifications

Type

Package

EMX5

EMT6

UMX5N

UMT6

IMX5

SMT6

Marking

Code

T2R

T108

3000

Basic ordering unit (pieces)

8000

3000

ROHM : SMT6

EIAJ : SC-74

Each lead has same dimensions

This product might cause chip aging and breakdown under the large electrified environment.

Please consider to design ESD protection circuit.

www.rohm.com

2010.09 - Rev.C

1/2

EMX5 / UMX5N / IMX5

Data Sheet

Electrical characteristics (Ta=25C)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Symbol

Min.

Typ.

−

Max.

−

Conditions

Unit

BV^CBO

BVCEO

BVEBO

=10μA

=1mA

−

=10μA

CB=10V

EB=2V

CBO

EBO

CE(sat)

−

0.5

120

0.5

−

μA

−

Emitter cutoff current

DC current transfer ratio

−

CE/I

=10V/5mA

=10mA/5mA

CE/IE=10V/−10mA, f=500MHz

IC/IB

Collector-emitter saturation voltage

Transition frequency

1.4

−

3.2

0.9

GHz

∗

Output capacitance

1.55

Cob

CB/f=10V/1MHz, I =0A

∗Transition frequency of the device.

Electrical characteristics curves

5.0

500

Ta=25°C

CE=10V

500

Ta=25°C

CE=10V

Ta=25°C

200

100

2.0

1.0

200

100

0.5

Ic/I^B=10

0.2

0.1

Ic/IB=2

0.1 0.2

0.5

−0.1 −0.2

−0.5

−1 −2

−5

−10 −20

−50

0.1 0.2

0.5

10 20

COLLECTOR CURRENT : I (mA)

EMITTER CURRENT : I (mA)

COLLECTOR CURRENT : I

(mA)

Fig.1 DC current gain vs. collector current

Fig.3 Gain bandwidth product vs. emitter current

Fig.2 Collector-emitter saturation voltage

vs. collector current

5.0

Ta=25°C

CE=6V

Ta=25°C

=1MHz

=500MHz

VCE=10V

IE=0A

f=31.8MHz

2.0

1.0

Cob

Cre

0.5

5.0

0.2

0.1

2.0

1.0

0.1 0.2

0.5

10 20

0.1 0.2

0.5

10 20

0.1 0.2

0.5

10 20

COLLECTOR CURRENT : I

(mA)

COLLECTOR TO BASE VOLTAGE : VCB (V)

COLLECTOR CURRENT : I

(mA)

Fig.6 Noise factor vs. collector current characteristics

Fig.4 Capacitance vs. reverse bias voltage

Fig.5 Collector to base time constant

vs. collector current characteristics

www.rohm.com

2010.09 - Rev.C

2/2

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Examples of application circuits, circuit constants and any other information contained herein

illustrate the standard usage and operations of the Products. The peripheral conditions must

be taken into account when designing circuits for mass production.

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