EMX5 [ROHM]

High transition frequency (dual transistors); 高转换频率(双晶体管)
EMX5
型号: EMX5
厂家: ROHM    ROHM
描述:

High transition frequency (dual transistors)
高转换频率(双晶体管)

晶体 晶体管
文件: 总2页 (文件大小:69K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
EMX5 / UMX5N / IMX5  
Transistors  
High transition frequency (dual transistors)  
EMX5 / UMX5N / IMX5  
!External dimensions (Units : mm)  
!Features  
1) Two 2SC3838K chips in a EMT or UMT or SMT package.  
2) High transition frequency. (fT=3.2GHz)  
3) Low output capacitance. (Cob=0.9pF)  
EMX6  
( )  
3
( )  
2
( )  
1
( )  
4
( )  
5
( )  
6
1.2  
1.6  
!Equivalent circuits  
EMX5 / UMX5N  
IMX5  
(3) (2)  
(1)  
(4) (5)  
(6)  
ROHM : EMT6  
UMX5N  
Each lead has same dimensions  
(4)  
(5)  
(6)  
(3)  
(2)  
(1)  
1.25  
2.1  
!Absolute maximum ratings (Ta=25°C)  
Parameter  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
Symbol  
Limits  
Unit  
V
VCBO  
VCEO  
VEBO  
20  
0.1Min.  
11  
V
3
V
ROHM : UMT6  
EIAJ : SC-88  
Each lead has same dimensions  
I
C
50  
mA  
EMX5 / UMX5N  
IMX5  
150(TOTAL)  
300(TOTAL)  
150  
1  
2  
Collector power  
dissipation  
Pc  
mW  
IMX5  
Junction temperature  
Storage temperature  
Tj  
°C  
°C  
Tstg  
55~+150  
1 120mW per element must not be exceeded.  
2 200mW per element must not be exceeded.  
1.6  
2.8  
!Package, marking, and packaging specifications  
Type  
EMX5  
EMT5  
X5  
UMX5N  
UMT6  
X5  
IMX5  
SMT6  
X5  
Package  
0.3Min.  
Marking  
Code  
T2R  
TR  
T108  
3000  
ROHM : SMT6  
EIAJ : SC-74  
Each lead has same dimensions  
Basic ordering unit (pieces)  
8000  
3000  
!Electrical characteristics (Ta=25°C)  
Parameter  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cutoff current  
Symbol  
Min.  
Typ.  
Max.  
Conditions  
Unit  
V
BVCBO  
BVCEO  
BVEBO  
20  
11  
3
I
I
I
C
=10µA  
V
C=1mA  
V
E
=10µA  
CB=10V  
EB=2V  
I
CBO  
EBO  
FE  
CE(sat)  
FE1 / FE2  
0.5  
0.5  
270  
0.5  
2
µA  
µA  
V
V
V
Emitter cutoff current  
I
DC current transfer ratio  
27  
0.5  
1.4  
h
CE/I  
C
=10V/5mA  
=10mA/5mA  
=10V/5mA  
V
I
C/I  
B
Collector-emitter saturation voltage  
V
h
h
1
V
CE/I  
CE/I  
C
hFE pairing  
Transition frequency  
f
T
3.2  
0.9  
1.55  
GHz  
pF  
V
V
C
=10V/10mA, f=200MHz  
Output capacitance  
Cob  
CB/f=10V/1MHz, I =0A  
E
Transition frequency of the device.  
Appendix  
Notes  
No technical content pages of this document may be reproduced in any form or transmitted by any  
means without prior permission of ROHM CO.,LTD.  
The contents described herein are subject to change without notice. The specifications for the  
product described in this document are for reference only. Upon actual use, therefore, please request  
that specifications to be separately delivered.  
Application circuit diagrams and circuit constants contained herein are shown as examples of standard  
use and operation. Please pay careful attention to the peripheral conditions when designing circuits  
and deciding upon circuit constants in the set.  
Any data, including, but not limited to application circuit diagrams information, described herein  
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM  
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any  
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of  
whatsoever nature in the event of any such infringement, or arising from or connected with or related  
to the use of such devices.  
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or  
otherwise dispose of the same, no express or implied right or license to practice or commercially  
exploit any intellectual property rights or other proprietary rights owned or controlled by  
ROHM CO., LTD. is granted to any such buyer.  
Products listed in this document use silicon as a basic material.  
Products listed in this document are no antiradiation design.  
The products listed in this document are designed to be used with ordinary electronic equipment or devices  
(such as audio visual equipment, office-automation equipment, communications devices, electrical  
appliances and electronic toys).  
Should you intend to use these products with equipment or devices which require an extremely high level of  
reliability and the malfunction of with would directly endanger human life (such as medical instruments,  
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other  
safety devices), please be sure to consult with our sales representative in advance.  
About Export Control Order in Japan  
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control  
Order in Japan.  
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)  
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.  
Appendix1-Rev1.0  

相关型号:

EMX51

2个2SCR522为一个封装。
ROHM

EMX51T2R

Small Signal Bipolar Transistor, 0.2A I(C), 20V V(BR)CEO, 2-Element, NPN, Silicon, ROHS COMPLIANT, EMT6, SC-107C, 6 PIN
ROHM

EMX52

2个2SCR523为一个封装。
ROHM

EMX52T2R

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, ROHS COMPLIANT, EMT6, SC-107C, 6 PIN
ROHM

EMX5_1

High transition frequency (dual transistors)
ROHM

EMX5_10

High transition frequency (dual transistors)
ROHM

EMXO-380

4 Pin DIP & SMD Evacuated Miniature Crystal Oscillator
VECTRON

EMY1

Emitter common (dual transistors)
ROHM

EMY1T2R

Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon, EMT5, 5 PIN
ROHM

EMY1_04

Emitter common (dual transistors)
ROHM

EMZ1

General purpose transistor (dual transistors)
ROHM

EMZ1

Silicon Epitaxial Planar
SECOS