ES6U42T2R [ROHM]

Small Signal Field-Effect Transistor, 1A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, WEMT6, 6 PIN;
ES6U42T2R
型号: ES6U42T2R
厂家: ROHM    ROHM
描述:

Small Signal Field-Effect Transistor, 1A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, WEMT6, 6 PIN

开关 光电二极管 晶体管
文件: 总14页 (文件大小:2027K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
ES6U42  
ꢀꢀPch -20V -1A Small Signal MOSFET + Schottky Barrier Diode  
Datasheet  
ꢀꢀ  
llOutline  
SOT-563T  
VDSS  
-20V  
390mΩ  
±1.0A  
0.8W  
RDS(on)(Max.)  
WEMT6  
ID  
PD  
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llFeatures  
llInner circuit  
1) Pch MOSFET and schottky barrier diode are  
ꢀꢀput in WEMT6 package.  
2) High-speed switching and Low on-  
ꢀꢀresistance.  
3) Low voltage drive(2.5V drive)  
4) Built in Low V schottky barrier diode.  
F
llPackaging specifications  
Embossed  
Tape  
Packing  
llApplication  
Reel size (mm)  
180  
8
Switching  
Tape width (mm)  
Type  
Basic ordering unit (pcs)  
Taping code  
8000  
T2R  
U42  
Marking  
llAbsolutaximum ratins (T 25°C ,unless otherwise specified)  
< MOS>  
Parameter  
Symbol  
VDSS  
VGSS  
ID  
Value  
-20  
Unit  
rain - Source voltage  
V
Gate - Source voltage  
±12  
±1.0  
±4.0  
-0.4  
-4.0  
0.7  
V
Continuous drain current  
Pulsed drain current  
A
*1  
IDP  
A
I
Continuous source current (body diode)  
Pulsed source current (body diode)  
Power dissipation  
A
S
*1  
I
A
W/element  
SP  
*2  
PD  
Tj  
Junction temperature  
150  
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www.rohm.com  
© 2016 ROHMCo., Ltd. All rights reserved.  
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20160829 - Rev.001  
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ES6U42  
Datasheet  
llAbsolute maximum ratings (Ta = 25°C)  
< Diode >  
Parameter  
Repetitive peak reverse voltage  
Reverse voltage  
Symbol  
VRM  
VR  
Value  
25  
Unit  
V
20  
V
IF  
Forward current  
0.5  
2.0  
5  
150  
A
*3  
IFSM  
Forward current surge peak  
Power dissipation  
A
*2  
PD  
W/element  
Tj  
Junction temperature  
< MOSFET + Diode >  
Parameter  
Power dissipation  
Symbl  
lue  
0.8  
Unit  
W/total  
*2  
PD  
Tstg  
Operating junction and storage temperature rang
-5 to +150  
llElectrical characteristics (Ta = 25°C
< MOSFET >  
Values  
Parameter  
Symbol  
IGSS  
Conditions  
= ±12V, V = 0V  
Unit  
Min.  
-
Typ. Max.  
V
V
Gate - Source lecurrent  
-
±10  
μA  
V
GS  
DS  
Drain - Source breadown  
voltage  
BR)DSS  
= 0V, I = -1mA  
-20  
-
-
-
GS  
D
Zero goltage  
drin cnt  
IDSS  
V
DS  
= -20V, V = 0V  
-
-1  
μA  
V
GS  
VGS(th)  
V
DS  
V
GS  
V
GS  
V
GS  
= -10V, I = -1mA  
ate threshold voltage  
-0.7  
-
-2.0  
390  
430  
800  
D
= -4.5V, I = -1A  
-
-
-
280  
310  
570  
D
Static drain - source  
on - state resistance  
*4  
RDS(on)  
= -4.0V, I = -1A  
mΩ  
S
D
= -2.5V, I = -0.5A  
D
Forward Transfer  
Admittance  
|Y |*4  
V
DS  
= -10V, I = -0.5A  
0.7  
-
-
fs  
D
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ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
www.rohm.com  
© 2016 ROHMCo., Ltd. All rights reserved.  
2/12  
20160829 - Rev.001  
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ES6U42  
Datasheet  
llElectrical characteristics (Ta = 25°C)  
< MOSFET >  
Values  
Parameter  
Input capacitance  
Symbol  
Conditions  
= 0V  
Unit  
pF  
Min.  
Typ.  
150  
20  
20  
Max.  
Ciss  
Coss  
Crss  
V
V
-
-
-
-
-
-
-
-
-
-
-
-
GS  
= -10V  
Output capacitance  
Reverse transfer capacitance  
Turn - on delay time  
Rise time  
DS  
f = 1MHz  
*4  
td(on)  
V
-15V, V = -4.5V  
DD GS  
tr*4  
I = -0.5A  
8
D
ns  
*4  
td(off)  
R = 30Ω  
Turn - off delay time  
Fall time  
25  
10  
L
tf*4  
R = 10Ω  
G
llGate charge characteristics (Ta = 25°C)  
< MOSFET >  
Values  
Typ.  
2.1  
Parameter  
Total gate charge  
Sol  
Citions  
Unit  
nC  
Min.  
Max.  
*4  
Qg  
-
-
-
-
-
-
V
-15V, I = -1A  
D
D
*4  
Qgs  
Gate - Source charge  
Gate - Drain cha
0.5  
= -4.5V  
GS  
*4  
Q
0.5  
llBodde electrical characteristics (Source-Drain) (Ta = 25°C)  
MSFET >  
Values  
Typ.  
-
Parameter  
Symbol  
Conditions  
Unit  
V
Min.  
-
Max.  
-1.2  
*4  
VSD  
Forward voltage  
V
GS  
= 0V, I = -1.0A  
S
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www.rohm.com  
© 2016 ROHMCo., Ltd. All rights reserved.  
3/12  
20160829 - Rev.001  
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ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
ES6U42  
Datasheet  
llElectrical characteristics (Ta = 25°C)  
< Diode >  
Values  
Parameter  
Symbol  
Conditions  
Unit  
Min.  
Typ.  
Max.  
0.36  
0.
100  
I = 0.1A  
-
-
-
-
-
-
V
V
F
VF  
IR  
Forward voltage  
I = 0.5A  
F
V = 20V  
Reverse current  
μA  
R
*1 Pw0μs, Duty cycle1%  
*2 Mounted on a ceramic board (30×30×0.8mm)  
*3 60Hz1cycle  
*4 Pulsed  
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www.rohm.com  
© 2016 ROHMCo., Ltd. All rights reserved.  
4/12  
20160829 - Rev.001  
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ES6U42  
Datasheet  
llElectrical characteristic curves <MOSFET>  
Fig.1 Typical Output Characteristics(I)  
Fig.2 Typical Output Characteristics(II)  
Fig.3 Breakdown Voltage vs
ig.Typical Transfer Characteristics  
ꢀꢀꢀꢀꢀJunction Temperatu
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© 2016 ROHMCo., Ltd. All rights reserved.  
20160829 - Rev.001  
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ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
ES6U42  
Datasheet  
llElectrical characteristic curves <MOSFET>  
Fig.5 Gate Threshold Voltage vs.  
ꢀꢀꢀꢀꢀJunction Temperature  
Fig.6 Forward Transfer Admittance  
vs. Drain Current  
Fig.7 Drain Current Derating Crv
Fig.Static Drain - Source On - State  
ꢀꢀResistance vs. Gate Source Voltage  
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6/12  
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© 2016 ROHMCo., Ltd. All rights reserved.  
20160829 - Rev.001  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
ES6U42  
Datasheet  
llElectrical characteristic curves <MOSFET>  
Fig.9 Static Drain - Source On - State  
Fig.10 Static Drain - Source On - State  
ꢀꢀResistance vs. Junction Temperature  
ꢀꢀꢀꢀResistance vs. Drain Current (I)  
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www.rohm.com  
© 2016 ROHMCo., Ltd. All rights reserved.  
7/12  
20160829 - Rev.001  
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ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
ES6U42  
Datasheet  
llElectrical characteristic curves <MOSFET>  
Fig.11 Static Drain - Source On - State  
Fig.12 Static Drain - Source On - State  
ꢀꢀꢀꢀꢀResistance vs. Drain Current (II)  
ꢀꢀꢀꢀꢀResistance vs. Drain Current (IlI)  
Fig.13 Static Drain - Source On Stte  
ꢀꢀꢀꢀꢀResistance vs. Drain rret (IV)  
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8/12  
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© 2016 ROHMCo., Ltd. All rights reserved.  
20160829 - Rev.001  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
ES6U42  
Datasheet  
llElectrical characteristic curves <MOSFET>  
Fig.14 Typical Capacitance vs.  
Fig.15 Switching Characteristics  
ꢀꢀꢀꢀꢀꢀDrain - Source Voltage  
Fig.16 Dynamic Input Charactestis  
Fig.17 Source Current vs.  
ꢀꢀꢀꢀꢀꢀSource Drain Voltage  
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20160829 - Rev.001  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
ES6U42  
Datasheet  
llElectrical characteristic curves <Di>  
Fig.18 Reverse Current vs.  
Fig.19 Forward Current vs.  
ꢀꢀꢀꢀꢀReverse Voltage  
ꢀꢀꢀꢀꢀForward Voltage  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
www.rohm.com  
© 2015 ROHMCo., Ltd. All rights reserved.  
10/12  
20160829 - Rev.001  
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ES6U42  
Datasheet  
llMeasurement circuits  
Fig. 1-1 SWITCHING TIME MEASUREMENT CIRCUIT  
Fig. 1-2 SWITCHING WAVEFORMS  
Fig. 2-1 GATE CHARGE MEASUREMENT CIRCUIT  
Fig. 2-2 GATE CHARGE WVEFORM  
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llNotice  
1.  
SBD has a large reverse leak current compto other type of diode. Therefore, it would  
raise a junction tempratre, and increase a reverse power loss. Further rise of inside  
temperature wocause a thermaruway. This built-in SBD has low V characteristics  
F
and theree, hiher leak current. ease consider enough the surrounding temperature,  
generatheof MOSFET d the reverse current.  
2.  
Tproduct might auship aging and breakdown under the large electrified environment.  
Pleae consider to dsign ESD protection circuit.  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
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© 2016 ROHMCo., Ltd. All rights reserved.  
11/12  
20160829 - Rev.001  
ES6U42  
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ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
Datasheet  
llDimensions  
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12/12  
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20160829 - Rev.001  
Notice  
Precaution on using ROHM Products  
1. Our Products are designed and manufactured for application in ordinary electronic equipments (such as AV equipment,  
OA equipment, telecommunication equipment, home electronic appliances, amusement equipment, etc.). If you  
intend to use our Products in devices requiring extremely high reliability (such as medical equipment (Note 1), transport  
equipment, traffic equipment, aircraft/spacecraft, nuclear power controllers, fuel controllers, car equipment including car  
accessories, safety devices, etc.) and whose malfunction or failure may cause loss of human life, bodily injury or  
serious damage to property (Specific Applications), please consult with the ROHM sales representative in advance.  
Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way responsible or able for any  
damages, expenses or losses incurred by you or third parties arising from the use of any ROHMs Products or Specific  
Applications.  
(Note1) Medical Equipment Classification of the Specific Applications  
JAPAN  
USA  
EU  
CHINA  
CLASS  
CLASSⅣ  
CLASSb  
CLASSⅢ  
CLASSⅢ  
CLASSⅢ  
2. ROHM designs and manufactures its Products subject to strict quality contsystem. However, semiconductor  
products can fail or malfunction at a certain rate. Please be sure to implemenyour own responsibilities, adequate  
safety measures including but not limited to fail-safe design against the pical ury, damage to any property, which  
a failure or malfunction of our Products may cause. The following are exaof safety measures:  
[a] Installation of protection circuits or other protective devices to imsystem safety  
[b] Installation of redundant circuits to reduce the impact of singr multiple circuit faiure  
3. Our Products are designed and manufactured for use under stdard conditions d not under any special or  
extraordinary environments or conditions, as exemplifielow. Accordingly, OHM shall not be in any way  
responsible or liable for any damages, expenses or losses isig from the usof aROHM’s Products under any  
special or extraordinary environments or conditionsf you intend to uProducts under any special or  
extraordinary environments or conditions (as exemfied elow), youindeeverification and confirmation of  
product performance, reliability, etc, prior to use, st necessary:  
[a] Use of our Products in any types of liquid, iluding water, oils, chemals, and organic solvents  
[b] Use of our Products outdoors or in pcwhere the Producae xposed to direct sunlight or dust  
[c] Use of our Products in places whthe Products are exposed to sea wind or corrosive gases, including Cl2,  
H2S, NH3, SO2, and NO2  
[d] Use of our Products in places whethe Products are oed to static electricity or electromagnetic waves  
[e] Use of our Products in proto heat-prodmponents, plastic cords, or other flammable items  
[f] Sealing or coating our Prowith resin or ing materials  
[g] Use of our Products without cleaning residue o(even if you use no-clean type fluxes, cleaning residue of  
flux is recommende; or Washing our Products by using water or water-soluble cleaning agents for cleaning  
residue after soldering  
[h] Use of the Pcts in places subjecdw condensation  
4. The Producnot subject to radiation-proof design.  
5. Please verify aconfirm chacteris f the final or mounted products in using the Products.  
6. In pular, if a transienad arge amount of load applied in a short period of time, such as pulse. is applied,  
confirman of performance haracteristics after on-board mounting is strongly recommended. Avoid applying power  
ding normal rated powerexceeding the power rating under steady-state loading condition may negatively affect  
ct performance and reliability.  
De-rate Power Dissipation depending on ambient temperature. When used in sealed area, confirm that it is the use in  
the range that does not exceed the maximum junction temperature.  
8. Confirm that operation temperature is within the specified range described in the product specification.  
9. ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in  
this document.  
Precaution for Mounting / Circuit board design  
1. When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product  
performance and reliability.  
2. In principle, the reflow soldering method must be used on a surface-mount products, the flow soldering method must  
be used on a through hole mount products. If the flow soldering method is preferred on a surface-mount products,  
please consult with the ROHM representative in advance.  
For details, please refer to ROHM Mounting specification  
Notice-PGA-E  
Rev.003  
© 2015 ROHM Co., Ltd. All rights reserved.  
Precautions Regarding Application Examples and External Circuits  
1. If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the  
characteristics of the Products and external components, including transient characteristics, as well as static  
characteristics.  
2. You agree that application notes, reference designs, and associated data and information contained in this document  
are presented only as guidance for Products use. Therefore, in case you use such information, you are solely  
responsible for it and you must exercise your own independent verification and judgment in the use of such information  
contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses  
incurred by you or third parties arising from the use of such information.  
Precaution for Electrostatic  
This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. e take proper  
caution in your manufacturing process and storage so that voltage exceeding the Products mimung will not be  
applied to Products. Please take special care under dry condition (e.g. Grounding of human body uipment / solder iron,  
isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control
Precaution for Storage / Transportation  
1. Product performance and soldered connections may deteriorate if the Products are stn the places where:  
[a] the Products are exposed to sea winds or corrosive gases, including Cl2S, NH3, SO2, and NO2  
[b] the temperature or humidity exceeds those recommended by ROHM  
[c] the Products are exposed to direct sunshine or condensation  
[d] the Products are exposed to high Electrostatic  
2. Even under ROHM recommended storage condition, solderability oducts out of recommened storage time period  
may be degraded. It is strongly recommended to confirm solderlity fore using Products owhich storage time is  
exceeding the recommended storage time period.  
3. Store / transport cartons in the correct direction, which is icaed on a carton with symbol. Otherwise bent leads  
may occur due to excessive stress applied when droppof a carton.  
4. Use Products within the specified time after openia midity barrier bagaking irequired before using Products of  
which storage time is exceeding the recommended orage time period
Precaution for Product Label  
A two-dimensional barcode printed on ROHrodcts label is for Ms internal use only.  
Precaution for Disposition  
When disposing Products please dispoem properly uuthorized industry waste company.  
Precaution for Foreign Exchane ad Foreign Trade act  
Since concerned goods mbe fallen under listed ems of export control prescribed by Foreign exchange and Foreign  
trade act, please consult ROHM in case of eo
Precaution Regantellectual Propey Rights  
1. All informationd data including not limited to application example contained in this document is for reference  
only. ROHM donot warrant at fgoing information or data will not infringe any intellectual property rights or any  
otherhts of any third party reing such information or data.  
2. ROHM ll not have any bligations where the claims, actions or demands arising from the combination of the  
cts with other articles suh as components, circuits, systems or external equipment (including software).  
. cense, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any  
third parties with respect to the Products or the information contained in this document. Provided, however, that ROHM  
will not assert its intellectual property rights or other rights against you or your customers to the extent necessary to  
manufacture or sell products containing the Products, subject to the terms and conditions herein.  
Other Precaution  
1. This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM.  
2. The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written  
consent of ROHM.  
3. In no event shall you use in any way whatsoever the Products and the related technical information contained in the  
Products or this document for any military purposes, including but not limited to, the development of mass-destruction  
weapons.  
4. The proper names of companies or products described in this document are trademarks or registered trademarks of  
ROHM, its affiliated companies or third parties.  
Notice-PGA-E  
Rev.003  
© 2015 ROHM Co., Ltd. All rights reserved.  

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