FMA11AT148 [ROHM]
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, SMT5, SC-74A, 5 PIN;
| 型号： | FMA11AT148 |
| 厂家： | 
ROHM |
| 描述： | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, SMT5, SC-74A, 5 PIN 开关 光电二极管 晶体管 |
| 文件： | 总3页 (文件大小：51K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
EMA11 / UMA11N / FMA11A
Transistors
Emitter common (dual digital transistors)
EMA11 / UMA11N / FMA11A
zExternal dimensions (Unit : mm)
zFeatures
1) Two DTA143Z chips in a EMT or UMT or SMT
package.
EMA11
( )
3
( )
2
( )
1
(
(
)
)
4
2) Mounting cost and area can be cut in half.
5
1.2
1.6
zStructure
All terminals have same dimensions
Epitaxial planar type
PNP silicon transistor
(Built-in resistor type)
ROHM : EMT5
UMA11N
Abbreviated symbol: A11
The following characteristics apply to both DTr1 and DTr2.
1.25
2.1
zEquivalent circuit
EMA11 / UMA11N
(3) (2)
FMA11A
(3)
0.1Min.
All terminals have same dimensions
(1)
(4)
(5)
ROHM : UMT5
EIAJ : SC-88A
R
1
R1
R
1
R1
R2
R2
R
2
R2
Abbreviated symbol: A11
DTr
2
DTr
1
DTr
2
DTr1
FMA11A
(4)
(6)
(2)
(1)
R
1
=4.7kΩ
=47kΩ
R
1
=4.7kΩ
=47kΩ
R2
R2
1.6
2.8
zPackaging specifications
Package
Code
Taping
TR
0.3to0.6
T2R
T148
3000
−
All terminals have same dimensions
8000
3000
−
Type
Basic ordering unit (pieces)
ROHM : SMT5
EIAJ : SC-74A
Abbreviated symbol: A11
EMA11
UMA11N
FMA11A
−
−
−
−
1/3
EMA11 / UMA11N / FMA11A
Transistors
zAbsolute maximum ratings (Ta = 25°C)
Limits
−50
Unit
V
Parameter
Supply voltage
Symbol
V
CC
−30
Input voltage
VIN
V
5
I
O
−100
Output current
mA
−100
I
C (Max.)
1
EMA11 / UMA11N
FMA11A
150 (TOTAL)
300 (TOTAL)
150
Power
dissipation
Pd
mW
2
Junction temperature
Storage temperature
Tj
°C
°C
Tstg
−55 to +150
1 120mW per element must not be exceeded.
2 200mW per element must not be exceeded.
zElectrical characteristics (Ta = 25°C)
Parameter
Symbol Min.
Typ.
−
Max.
−0.5
−
Unit
V
Conditions
V
V
I (off)
I (on)
−
−1.3
−
V
CC=−5V, I
=−0.3V, I
/I =−5mA/−0.25mA
=−5V
CC=−50V, V
=−5V, I =−10mA
CE=10mA, I
O
=−100µA
Input voltage
−
VO
O
=−5mA
Output voltage
V
O (on)
−0.1
−
−0.3
−1.8
−0.5
−
V
mA
µA
−
IO I
Input current
I
I
−
V
V
V
V
I
Output current
I
O (off)
−
−
I=0V
DC current gain
Transition frequency
Input resistance
Resistance ratio
Transition frequency of the device
G
I
80
−
−
O
O
f
T
250
4.7
10
−
MHz
kΩ
−
E
=−5mA, f=100MHz
R
1
3.29
8
6.11
12
−
−
R2/R
1
zElectrical characteristic curves
−100
1k
−10m
V
O
=−0.3V
VO=−5V
VCC=−5V
−5m
−2m
500
−50
Ta=100°C
25°C
−40°C
−20
−10
200
−1m
−500µ
100
50
Ta=100°C
25°C
−40°C
−200µ
−5
−2
Ta=−40°C
25°C
−100µ
−50µ
20
100°C
10
5
−1
−20µ
−10µ
−5µ
−500m
2
1
−200m
−100m
−2µ
−1µ
0
−100µ−200µ −500µ −1m −2m
−5m −10m −20m −50m −100m
−100µ−200µ −500µ−1m −2m −5m −10m −20m −50m−100m
−0.5
−1
−1.5
−2
−2.5
−3
OUTPUT CURRENT : I
O
(A)
OUTPUT CURRENT : IO (A)
INPUT VOLTAGE : VI (off) (V)
Fig.1 Input voltage vs. output current
(ON characteristics)
Fig.2 Output current vs. input voltage
(OFF characteristics)
Fig.3 DC current gain vs. output
current
2/3
EMA11 / UMA11N / FMA11A
Transistors
−1
lO/lI=20
−500m
Ta=100°C
25°C
−40°C
−200m
−100m
−50m
−20m
−10m
−5m
−2m
−1m
−100µ
−1m
−10m
−200µ −500µ
−2m −5m
−20m −50m
−100m
OUTPUT CURRENT : IO (A)
Fig.4 Output voltage vs. output
current
3/3
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