FML10 [ROHM]

General purpose transistor (isolated transistor and diode); 通用晶体管(隔离的晶体管和二极管)
FML10
型号: FML10
厂家: ROHM    ROHM
描述:

General purpose transistor (isolated transistor and diode)
通用晶体管(隔离的晶体管和二极管)

晶体 二极管 晶体管
文件: 总5页 (文件大小:80K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
FML10  
Transistors  
General purpose transistor  
(isolated transistor and diode)  
FML10  
2SD2652 and a RB461F are housed independently in a UMT package.  
zExternal dimensions (Unit : mm)  
zApplications  
DC / DC converter  
Motor driver  
FML10  
zFeatures  
1.6  
2.8  
1) Tr1: Low VCE(sat)  
Di : Low VF  
2) Small package  
0.3Min.  
Each lead has same dimensions  
Abbreviated symbol : L10  
zStructure  
Silicon epitaxial planar transistor  
Schottky barrier diode  
ROHM : SMT5  
EIAJ : SC-74A  
zEquivalent circuit  
(3)  
(4)  
(5)  
Di2  
Tr1  
(2)  
(1)  
zPackaging specifications  
Type  
FML10  
Package  
Marking  
Code  
SMT5  
L10  
TR  
Basic ordering unit(pieces)  
3000  
Rev.B  
1/4  
FML10  
Transistors  
zAbsolute maximum ratings (Ta=25°C)  
Tr1  
Parameter  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Symbol  
Limits  
Unit  
V
VCBO  
VCEO  
VEBO  
15  
12  
V
6
V
I
C
1.5  
A
Collector current  
I
CP  
3
200  
A
Power dissipation  
P
C
mW  
°C  
°C  
Junction temperature  
Tj  
150  
Range of storage temperature Tstg  
40 to +125  
Single pulse, P =1ms  
W
Di2  
Parameter  
Symbol  
Limits  
Unit  
V
Reak reverse voltage  
VRM  
25  
Average rectified forward current  
I
F
700  
mA  
A
F
orward current surge peak (60H  
Z
, 1)  
I
FSM  
3
20  
Reverse voltage (DC)  
V
R
V
Junction temperature  
Tj  
125  
°C  
°C  
Range of storage temperature  
Tstg  
40 to +125  
zElectrical characteristics (Ta=25°C)  
Tr1  
Parameter  
Symbol Min. Typ. Max. Unit  
Conditions  
Collector-base breakdown voltage  
BVCBO  
15  
12  
6
V
V
I
I
I
C
=10µA  
=1mA  
Collector-emitter breakdown voltage BVCEO  
C
Emitter-base breakdown voltage  
Collector cutoff current  
BVEBO  
V
E
=10µA  
I
CBO  
EBO  
CE(sat)  
FE  
100  
100  
nA  
nA  
V
CB=15V  
Emitter cutoff current  
I
VEB=6V  
Collector-emitter saturation voltage  
DC current gain  
V
85 200 mV  
I
C
/I  
B
=500mA/25mA  
=2V/200mA  
CE=2V, I = −200mA, f=100MHz ∗  
CB=10V, I =0A, f=1MHz  
h
270  
680  
V
V
V
CE/I  
C
Transition frequency  
f
T
400  
12  
MHz  
pF  
E
Collector output capacitance  
Cob  
E
Pulsed  
Di2  
Parameter  
Forward voltage  
Reverse current  
Symbol  
Min.  
Typ.  
Max.  
490  
200  
Unit  
Conditions  
=700mA  
VR=20V  
V
F
mV  
IF  
I
R
µA  
Rev.B  
2/4  
FML10  
Transistors  
zElectrical characteristic curves  
Tr1  
1000  
10  
1
1
0.1  
IC/IB=20/1  
Pulsed  
Ta=25°C  
Ta=100°C  
V
CE=2V  
Ta= −40°C  
Ta=25°C  
Ta=100°C  
V
BE(sat)  
Ta=25°C  
Ta= −40°C  
Ta=100°C  
0.1  
100  
Ta=25°C  
Ta= −40°C  
I
C/I  
B
=50/1  
0.01  
0.001  
V
CE(sat)  
IC/IB  
=20/1  
0.01  
0.001  
IC/IB=10/1  
V
CE=2V  
Pulsed  
10  
0.001  
0.001  
0.01  
0.1  
1
10  
0.001  
0.01  
0.1  
1
10  
0.01  
0.1  
1
10  
COLLECTOR CURRENT : I  
C
(A)  
COLLECTOR CURRENT : IC (A)  
COLLECTOR CURRENT : I  
C
(A)  
Fig.1 DC current gain  
vs. collector current  
Fig.2 Collector-emitter saturation voltage  
base-emitter saturation voltage  
vs. collector current  
Fig.3 Collector-emitter saturation voltage  
vs. collector current  
10  
1
1000  
1000  
V
CE=2V  
IC=20 IB1=-20IB2  
Ta=25°C  
f=100MHz  
Pulsed  
tstg  
tr  
100  
tf  
Ta=100°C  
Ta=25°C  
tdon  
0.1  
0.01  
100  
10  
Ta= −40°C  
V
CE=2V  
Ta=25°C  
Pulsed  
10  
0.001  
1
0.001  
0
0.5  
1.0  
1.5  
0.001  
0.01  
0.1  
1
0.01  
0.1  
1  
(A)  
10  
EMITTER CURRENT : I  
E
COLLECTOR CURRENT : I  
C
(A)  
BASE TO EMITTER VOLTAGE : VBE (V)  
Fig.5 Gain bandwidth product  
vs. emitter current  
Fig.6 Switching time  
Fig.4 Grounded emitter propagation  
characteristics  
100  
IE=0A  
f=1MHz  
Cib  
Ta=25°C  
Cob  
10  
1
0.1  
1
10  
100  
EMITTER TO BASE VOLTAGE : VEB (V)  
COLLECTOR TO BASE VOLTAGE : VCB (V)  
Fig.7 Collector output capacitance  
vs. collector-base voltage  
Emitter input capacitance  
vs. emitter-base voltage  
Rev.B  
3/4  
FML10  
Transistors  
Di2  
10  
1000m  
100m  
10m  
1m  
1
100m  
10m  
Ta=125°C  
100µ  
10µ  
Ta=25°C  
1m  
1µ  
Ta= −25°C  
0.1m  
0.1µ  
0
0.1  
0.2  
0.3  
0.4  
0.5  
(V)  
0.6  
0
10  
20  
30  
40  
50  
60  
70  
FORWARD VOLTAGE : V  
F
REVERSE VOLTAGE : VR (V)  
Fig.9 Forward characteristics  
Fig.10 Reverse characteristics  
Rev.B  
4/4  
Appendix  
Notes  
No technical content pages of this document may be reproduced in any form or transmitted by any  
means without prior permission of ROHM CO.,LTD.  
The contents described herein are subject to change without notice. The specifications for the  
product described in this document are for reference only. Upon actual use, therefore, please request  
that specifications to be separately delivered.  
Application circuit diagrams and circuit constants contained herein are shown as examples of standard  
use and operation. Please pay careful attention to the peripheral conditions when designing circuits  
and deciding upon circuit constants in the set.  
Any data, including, but not limited to application circuit diagrams information, described herein  
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM  
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any  
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of  
whatsoever nature in the event of any such infringement, or arising from or connected with or related  
to the use of such devices.  
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or  
otherwise dispose of the same, no express or implied right or license to practice or commercially  
exploit any intellectual property rights or other proprietary rights owned or controlled by  
ROHM CO., LTD. is granted to any such buyer.  
Products listed in this document are no antiradiation design.  
The products listed in this document are designed to be used with ordinary electronic equipment or devices  
(such as audio visual equipment, office-automation equipment, communications devices, electrical  
appliances and electronic toys).  
Should you intend to use these products with equipment or devices which require an extremely high level of  
reliability and the malfunction of with would directly endanger human life (such as medical instruments,  
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other  
safety devices), please be sure to consult with our sales representative in advance.  
About Export Control Order in Japan  
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control  
Order in Japan.  
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)  
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.  
Appendix1-Rev1.1  

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