FMW6 [ROHM]
High transition frequency (dual transistors); 高转换频率（双晶体管）
| 型号： | FMW6 |
| 厂家： | 
ROHM |
| 描述： | High transition frequency (dual transistors) |
| 文件： | 总2页 (文件大小：69K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
EMX4 / UMW6N / UMW10N / UMX4N /
FMW6 / FMW10 / IMX4
Transistors
High transition frequency (dual transistors)
EMX4 / UMW6N / UMW10N / UMX4N /
FMW6 / FMW10 / IMX4
!Features
1) Two 2SC3837K chips in a EMT or UMT or SMT package.
2) High transition frequency. (fT=1.5GHz)
3) Low output capacitance. (Cob=0.95pF)
!Equivalent circuit
EMX4 / UMX4N
IMX4
UMW6N
FMW6
UMW10
FMW10
(3) (2)
(1)
(4) (5)
(6)
(3) (2)
(1)
(3) (4)
(5)
(3)
(2)
(1)
(3)
(4)
(5)
(5)
(1)
(5)
(1)
(4)
(5)
(6)
(3)
(2)
(1)
(4)
(2)
(4)
(2)
!Absolute maximum ratings (Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Symbol
Limits
Unit
V
VCBO
VCEO
VEBO
30
18
V
3
V
Collector current
I
C
50
mA
EMX4 / UMW6N / UMW10N / UMX4N
Collector power
150(TOTAL)
300(TOTAL)
150
∗1
∗2
Pc
mW
dissipation
FMW6 / FMW10 / IMX4
Junction temperature
Storage temperature
Tj
°C
°C
Tstg
−55~
+150
∗1 120mW per element must not be exceeded.
∗2 200mW per element must not be exceeded.
!Electrical characteristics (Ta = 25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Symbol
Min.
Typ.
−
−
Max.
−
−
Conditions
Unit
V
BVCBO
BVCEO
BVEBO
30
18
3
I
I
I
C
=10µA
V
C=1mA
−
−
−
−
V
E
=10µA
CB=10V
EB=2V
I
CBO
EBO
FE
CE(sat)
FE1 / FE2
−
−
0.5
0.5
270
0.5
2
µA
µA
−
V
V
V
Emitter cutoff current
I
DC current transfer ratio
27
−
0.5
600
−
−
−
h
CE/I
C
=10V/10mA
=20mA/4mA
V
I
C/I
B
Collector-emitter saturation voltage
V
h
h
−
1
V
CE/I
C
=10V/10mA
=10V/10mA, f=200MHz
=0A
hFE pairing
Transition frequency
f
T
1500
0.95
−
1.6
∗
MHz
pF
V
V
CE/I
C
Output capacitance
Cob
CB/f=10V/1MHz, I
E
∗Transition frequency of the device.
EMX4 / UMW6N / UMW10N / UMX4N /
FMW6 / FMW10 / IMX4
Transistors
!Package, marking, and packaging specifications
Type
EMX4
EMT6
X4
UMW6N UMW10N UMX4N
FMW6
SMT5
W6
FMW10
SMT6
W10
IMX4
SMT6
X4
Package
UMT5
W6
UMT6
W10
TR
UMT6
X4
Marking
Code
T2R
TR
TR
T148
3000
T148
T108
3000
Basic ordering unit (pieces)
8000
3000
3000
3000
3000
!External dimensions (Units : mm)
EMX4
UMW6N
( )
3
( )
2
( )
1
( )
4
( )
5
( )
6
1.25
2.1
1.2
1.6
0.1Min.
ROHM : EMT6
Each lead has same dimensions
ROHM : UMT5
EIAJ : SC-88A
Each lead has same dimensions
FMW6
UMW10N / UMX4N
1.25
2.1
1.6
2.8
0.1Min.
0.3to0.6
ROHM : UMT6
EIAJ : SC-88
Each lead has same dimensions
ROHM : SMT5
EIAJ : SC-74A
Each lead has same dimensions
FMW10 / IMX4
1.6
2.8
0.3to0.6
ROHM : SMT6
EIAJ : SC-74
Each lead has same dimensions
相关型号：
FMW6T149
RF Small Signal Bipolar Transistor, 0.05A I(C), 2-Element, Silicon, NPN, MINIMOLD, FMT, 5 PIN
ROHM
FMW73N20GSC
Power Field-Effect Transistor, 73A I(D), 200V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN
FUJI
FMW73N20GSC-K1
Power Field-Effect Transistor, 73A I(D), 200V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN
FUJI
FMW7T149
RF Small Signal Bipolar Transistor, 0.05A I(C), 2-Element, Silicon, NPN, MINIMOLD, FMT, 5 PIN
ROHM
FMW9T148
RF Small Signal Bipolar Transistor, 0.05A I(C), 2-Element, Silicon, NPN, MINIMOLD, FMT, 5 PIN
ROHM
FMW9T149
RF Small Signal Bipolar Transistor, 0.05A I(C), 2-Element, Silicon, NPN, MINIMOLD, FMT, 5 PIN
ROHM
©2020 ICPDF网 联系我们和版权申明