IMD23T110 [ROHM]

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon, SMT6, SC-74, 6 PIN;
IMD23T110
型号: IMD23T110
厂家: ROHM    ROHM
描述:

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon, SMT6, SC-74, 6 PIN

开关 光电二极管 晶体管
文件: 总5页 (文件大小:80K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
IMD23  
Transistors  
General purpose  
(dual digital transistors)  
IMD23  
zExternal dimensions (Unit : mm)  
zFeatures  
1) Both the DTB113Z chip and DTC114E chip in a SMT  
package.  
IMD23  
2) Mounting possible with SMT3 automatic mounting  
machines.  
3) Transistor elements are independent, eliminating  
interference.  
1.6  
2.8  
4) Mounting cost and area can be cut in half.  
0.3to0.6  
Each lead has same dimensions  
ROHM : SMT6  
EIAJ : SC-74  
zStructure  
Epitaxial planar type  
Abbreviated symbol : D23  
NPN / PNP silicon transistor (Built-in resistor type)  
zEquivalent circuits  
(4)  
(5)  
(6)  
IMD23  
R2  
DTr1  
R1  
DTr2  
R1  
R2  
(3)  
(2)  
(1)  
DTr  
1
=(R  
1
/R  
2
=1k/10k)  
DTr2=(R  
1/R  
2=10k/10k)  
zAbsolute maximum ratings (Ta=25°C)  
DTr1  
Parameter  
Supply voltage  
Symbol  
Limits  
50  
Unit  
V
V
CC  
IN  
Input voltage  
V
V
10 to +5  
500  
Output current  
I
C
mA  
mW  
°C  
°C  
Power dissipation  
Junction temperature  
Storage temperature  
Pd  
Tj  
300(Total)  
150  
Tstg  
55 to +150  
200mW per element must not be a exceeded.  
1/4  
IMD23  
Transistors  
DTr2  
Limits  
Parameter  
Symbol  
Unit  
V
Supply voltage  
Input voltage  
V
CC  
IN  
50  
10 to +40  
50  
V
V
I
O
Output current  
mA  
I
C (Max.)  
100  
Power dissipation  
300 (TOTAL)  
150  
mW  
°C  
Pd  
Tj  
Junction temperature  
Storage temperature  
Tstg  
55 to +150  
°C  
200mW per element must not be exceeded.  
zElectrical characteristics (Ta=25°C)  
DTr  
1
Parameter  
Symbol Min.  
Typ. Max. Unit  
Conditions  
CC=5V, I =100µA  
=0.3V, I =20mA  
/I =50mA/2.5mA  
= 5V  
CC=50V, V  
V
I(off)  
3  
0.3  
V
V
O
Input voltage  
V
V
I(on)  
O
O
Output voltage  
Input current  
VO(on)  
0.3  
7.2  
0.5  
V
mA  
µA  
I
O I  
I
I
V
V
V
I
Output current  
DC current gain  
Input resistance  
Resistance ratio  
Transition frequency  
I
O(off)  
I=0V  
G
I
56  
0.7  
8
O
=5V, I  
O
=50mA  
R1  
1
1.3  
12  
kΩ  
R
2/R  
1
10  
200  
f
T
MHz  
V
CE=10V  
,
I
E
=50mA  
,
f=100MHz  
Transition frequency of the device  
DTr2  
Parameter  
Symbol Min.  
Typ.  
Max.  
Unit  
V
Conditions  
3
0.5  
V
CC  
=
5V, I  
O
=
100µA  
V
I (off)  
I (on)  
Input voltage  
VO  
=
0.3V, I  
10mA, I  
5V  
50V, V  
5V, I 5mA  
10V, I  
O
=10mA  
V
Output voltage  
Input current  
0.1  
0.3  
0.88  
0.5  
V
mA  
µA  
I
O
=
I
=0.5mA  
V
O (on)  
I
I
V
V
V
I
=
Output current  
DC current gain  
Transition frequency  
Input resistance  
Resistance ratio  
CC  
=
I
=0V  
I
O (off)  
G
I
30  
O
=
O
=
f
T
250  
10  
1
MHz  
kΩ  
VCE  
=
E
=
5mA, f  
=
100MHz  
R1  
7
13  
1.2  
R2/R1  
0.8  
Transition frequency of the device  
2/4  
IMD23  
Transistors  
zPackaging specifications  
Package  
Code  
Taping  
T110  
Basic ordering  
unit (pieces)  
3000  
Type  
IMD23  
zElectrical characteristic curves  
DTr (PNP)  
1
-100  
-10m  
-5m  
1k  
VO=0.3V  
VCC=  
5V  
VO=5V  
-50  
500  
-2m  
Ta=100 C  
25 C  
40 C  
-20  
-10  
-5  
200  
100  
50  
-1m  
-500µ  
Ta=100 C  
25 C  
-200µ  
-100µ  
-50µ  
Ta=40 C  
25 C  
40 C  
-2  
20  
10  
5
100 C  
-1  
-20µ  
-10µ  
-5µ  
-500m  
-200m  
-100m  
-500µ -1m -2m  
2
1
-2µ  
-1µ  
-5m -10m -20m -50m-100m-200m -500m  
0
-0.5  
-1.0  
-1.5  
-2.0  
-2.5  
-3.0  
-500µ -1m -2m  
-5m -10m -20m -50m-100m-200m -500m  
OUTPUT CURRENT : I  
O (A)  
OUTPUT CURRENT : I  
O (A)  
INPUT VOLTAGE : VI (off)  
(V)  
Fig.1 Input voltage vs. output current  
(ON characteristics)  
Fig.2 Output current vs. input voltage  
(OFF characteristics)  
Fig.3 DC current gain vs. output  
current  
-1  
lO/lI=20  
-500m  
Ta=100 C  
25 C  
40 C  
-200m  
-100m  
-50m  
-20m  
-10m  
-5m  
-2m  
-1m  
-500µ  
-1m -2m  
-5m -10m -20m -50m-100m-200m -500m  
OUTPUT CURRENT : I  
O (A)  
Fig.4 Output voltage vs. output  
current  
3/4  
IMD23  
Transistors  
DTr2 (NPN)  
10m  
5m  
100  
50  
1k  
V
O
=0.3V  
V
CC=5V  
VO=5V  
500  
Ta=100˚C  
25˚C  
40˚C  
2m  
1m  
Ta=100˚C  
25˚C  
40˚C  
20  
10  
200  
500µ  
100  
50  
Ta=40˚C  
5
200µ  
25˚C  
100  
µ
µ
100˚C  
2
20  
50  
1
10  
5
20  
µ
500m  
10µ  
µ
5
200m  
100m  
2
1
2
µ
1µ  
100µ 200µ  
500µ 1m  
2m  
5m 10m 20m 50m 100m  
0
0.5  
1
1.5  
2
2.5  
3
100µ 200µ 500µ1m 2m 5m 10m 20m 50m100m  
OUTPUT CURRENT : I  
O
(A)  
OUTPUT CURRENT : IO (A)  
INPUT VOLTAGE : VI (off) (V)  
Fig.5 Input voltage vs. output current  
(ON characteristics)  
Fig.7 DC current gain vs. output  
current  
Fig.6 Output current vs. input voltage  
(OFF characteristics)  
1
lO/lI=20  
500m  
Ta=100˚C  
25˚C  
200m  
40˚C  
100m  
50m  
20m  
10m  
5m  
2m  
1m  
100µ  
200µ  
500µ  
1m  
2m  
5m 10m 20m 50m 100m  
OUTPUT CURRENT : I (A)  
O
Fig.8 Output voltage vs. output  
current  
4/4  
Appendix  
Notes  
No technical content pages of this document may be reproduced in any form or transmitted by any  
means without prior permission of ROHM CO.,LTD.  
The contents described herein are subject to change without notice. The specifications for the  
product described in this document are for reference only. Upon actual use, therefore, please request  
that specifications to be separately delivered.  
Application circuit diagrams and circuit constants contained herein are shown as examples of standard  
use and operation. Please pay careful attention to the peripheral conditions when designing circuits  
and deciding upon circuit constants in the set.  
Any data, including, but not limited to application circuit diagrams information, described herein  
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM  
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any  
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of  
whatsoever nature in the event of any such infringement, or arising from or connected with or related  
to the use of such devices.  
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or  
otherwise dispose of the same, no express or implied right or license to practice or commercially  
exploit any intellectual property rights or other proprietary rights owned or controlled by  
ROHM CO., LTD. is granted to any such buyer.  
Products listed in this document are no antiradiation design.  
The products listed in this document are designed to be used with ordinary electronic equipment or devices  
(such as audio visual equipment, office-automation equipment, communications devices, electrical  
appliances and electronic toys).  
Should you intend to use these products with equipment or devices which require an extremely high level of  
reliability and the malfunction of with would directly endanger human life (such as medical instruments,  
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other  
safety devices), please be sure to consult with our sales representative in advance.  
About Export Control Order in Japan  
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control  
Order in Japan.  
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)  
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.  
Appendix1-Rev1.1  

相关型号:

IMD2A

General purpose (dual digital transistors)
ROHM

IMD2AFRAT108

Small Signal Bipolar Transistor
ROHM

IMD2AT108

General purpose (dual digital transistors)
ROHM

IMD2AT109

Small Signal Bipolar Transistor, 0.03A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
ROHM

IMD2AT110

General purpose (dual digital transistors)
ROHM

IMD3

TRANSISTOR | SO
ETC

IMD3A

General purpose (dual digital transistors)
ROHM

IMD3AFRAT108

Small Signal Bipolar Transistor,
ROHM

IMD3AT108

General purpose (Dual digital transistors)
RENESAS

IMD3AT109

Small Signal Bipolar Transistor, 0.05A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
ROHM

IMD3AT110

General purpose (dual digital transistors)
ROHM

IMD6

TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SO
ETC