IMD3AFRAT108 [ROHM]
Small Signal Bipolar Transistor,;
| 型号： | IMD3AFRAT108 |
| 厂家： | 
ROHM |
| 描述： | Small Signal Bipolar Transistor, |
| 文件： | 总9页 (文件大小：1406K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
EMD3FHA / UMD3NFHA / IMD3AFRA
Datasheet
NPN + PNP Complex Digital Transistors (Bias Resistor Built-in Transistors)
AEC-Q101 Qualified
<For DTr1(NPN)>
Parameter
lOutline
(6)
EMT6
UMT6
Value
50V
(5)
(6)
(4)
(5)
(4)
VCC
IC(MAX.)
R1
(1)
(1)
(2)
(2)
100mA
10kW
10kW
(3)
(3)
EMD3FHA
(SC-107C)
UMD3NFHA
SOT-353 (SC-88)
R2
SMT6
(4)
(5)
(6)
<For DTr2(PNP)>
Parameter
(3)
Value
-50V
-100mA
10kW
(2)
(1)
VCC
IC(MAX.)
R1
IMD3AFRA
SOT-457 (SC-74)
R2
10kW
lFeatures
lInner circuit
OUT
(6)
IN
(5)
GND
(4)
1) Both the DTC114E chip and DTA114E chip
in one package.
R1
2) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see inner circuit).
R2
DTr1
DTr2
R2
R1
3) The bias resistors consist of thin-film resistors
with complete isolation to allow negative biasing
of the input. They also have the advantage of
completely eliminating parasitic effects.
4) Only the on/off conditions need to be set for
operation, making the circuit design easy.
5) Lead Free/RoHS Compliant.
(1)
GND
(2)
IN
(3)
OUT
EMD3FHA / UMD3NFHA
OUT
(4)
IN
(5)
GND
(6)
R1
R2
DTr2
DTr1
R2
lApplication
R1
Inverter circuit, Interface circuit, Driver circuit
(3)
GND
(2)
IN
(1)
OUT
IMD3AFRA
lPackaging specifications
Package
size
(mm)
Basic
ordering
unit (pcs)
Taping
code
Reel size Tape width
Part No.
Package
Marking
(mm)
(mm)
EMD3FHA
EMT6
UMT6
SMT6
1616
2021
2928
T2R
TR
180
180
180
8
8
8
8,000
3,000
3,000
D3
D3
D3
UMD3NFHA
IMD3AFRA
T108
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
2013.07 - Rev.E
1/8
EMD3FHA / UMD3NFHA / IMD3AFRA
E
Data Sheet
lAbsolute maximum ratings (Ta = 25C)
Parameter
Symbol
VCC
VIN
DTr1(NPN)
50
DTr2(PNP)
Unit
V
Supply voltage
-50
-40 to +10
-50
Input voltage
V
-10 to +40
50
IO
Output current
mA
mA
mW
mW
°C
*1
Collector current
100
IC(MAX.)
-100
150 (Total)*3
300 (Total)*4
E
M
D
3F
H
A
/
UM
D
3
NFHA
*2
Power dissipation
PD
I
M
D
3
A
FRA
Tj
Junction temperature
150
Tstg
Range of storage temperature
°C
-55 to +150
lElectrical characteristics(Ta = 25°C) <For DTr1(NPN)>
Parameter
Symbol
VI(off)
VI(on)
VO(on)
II
Conditions
VCC = 5V, IO = 100mA
VO = 0.3V, IO = 10mA
IO / II = 10mA / 0.5mA
VI = 5V
Min.
Typ.
Max.
0.5
-
Unit
V
-
3.0
-
-
-
Input voltage
Output voltage
Input current
0.1
-
0.3
0.88
0.5
-
V
mA
mA
-
-
IO(off)
GI
VCC = 50V, VI = 0V
VO = 5V, IO = 5mA
-
Output current
DC current gain
Input resistance
Resistance ratio
-
-
30
7
-
R1
10
1
13
kW
-
R2/R1
-
0.8
1.2
VCE = 10V, IE = -5mA
f = 100MHz
*1
Transition frequency
-
250
-
MHz
fT
lElectrical characteristics(Ta = 25°C) <For DTr2(PNP)>
Parameter
Symbol
VI(off)
VI(on)
VO(on)
II
Conditions
VCC = -5V, IO = -100mA
VO = -0.3V, IO = -10mA
IO / II = -10mA / -0.5mA
VI = -5V
Min.
Typ.
Max.
-0.5
-
Unit
V
-
-3.0
-
-
Input voltage
-
Output voltage
Input current
V
mA
mA
-
-0.1
-0.3
-0.88
-0.5
-
-
-
-
IO(off)
GI
VCC = -50V, VI = 0V
VO = -5V, IO = -5mA
-
Output current
DC current gain
Input resistance
Resistance ratio
-
30
7
-
R1
10
1
13
kW
-
R2/R1
-
0.8
1.2
VCE = -10V, IE = 5mA
f = 100MHz
*1
Transition frequency
-
250
-
MHz
fT
*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference footprint
*3 120mW per element must not be exceeded.
*4 200mW per element must not be exceeded.
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
2013.07 - Rev.E
2/8
EMD3FHA / UMD3NFHA / IMD3AFRA
E
Data Sheet
lElectrical characteristic curves (Ta = 25°C) <For DTr1(NPN)>
Fig.2 Output current vs. input voltage
Fig.1 Input voltage vs. output current
(ON characteristics)
(OFF characteristics)
OUTPUT CURRENT : IO [A]
INPUT VOLTAGE : VI(off)[V]
Fig.4 DC current gain vs. output current
Fig.3 Output current vs. output voltage
I =
260mA
I
50
40
30
20
10
0
240mA
220mA
200mA
180mA
160mA
140mA
120mA
Ta=25ºC
100mA
0A
0
5
10
OUTPUT CURRENT : IO [A]
OUTPUT VOLTAGE : VO [V]
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
2013.07 - Rev.E
3/8
EMD3FHA / UMD3NFHA / IMD3AFRA
E
Data Sheet
lElectrical characteristic curves (Ta = 25°C) <For DTr1(NPN)>
Fig.5 Output voltage vs. output current
OUTPUT CURRENT : IO [A]
lElectrical characteristic curves (Ta = 25°C) <For DTr2(PNP)>
Fig.7 Output current vs. input voltage
Fig.6 Input voltage vs. output current
(ON characteristics)
(OFF characteristics)
OUTPUT CURRENT : IO [A]
INPUT VOLTAGE : VI(off)[V]
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
2013.07 - Rev.E
4/8
EMD3FHA / UMD3NFHA / IMD3AFRA
E
Data Sheet
lElectrical characteristic curves (Ta = 25°C) <For DTr2(PNP)>
Fig.9 DC current gain vs. output current
Fig.8 Output current vs. output voltage
-50
II=
Ta=25ºC
-300mA
-280mA
-260mA
-240mA
-40
-30
-20
-10
0
-220mA
-200mA
-180mA
-160mA
-140mA
-120mA
-100mA
0A
0
-5
OUTPUT VOLTAGE : VO [V]
-10
OUTPUT CURRENT : IO [A]
Fig.10 Output voltage vs. output current
OUTPUT CURRENT : IO [A]
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
2013.07 - Rev.E
5/8
EMD3FHA / UMD3NFHA / IMD3AFRA
E
Data Sheet
lDimensions (Unit : mm)
㻰
㻭
㼎
EMT6
㼏
㼤
㻿 㻭
㼑
㼥
㻿
㻿
㼎㻞
㼑
Pattern of terminal position areas
[Not a recommended pattern of soldering pads]
㻹㻵㻸㻵㻹㻱㼀㻱㻾㻿
㻹㻵㻺
㻵㻺㻯㻴㻱㻿
㻰㻵㻹
㻹㻭㼄
㻜㻚㻡㻡
㻜㻚㻝㻜
㻜㻚㻞㻣
㻜㻚㻝㻤
㻝㻚㻣㻜
㻝㻚㻟㻜
㻹㻵㻺
㻹㻭㼄
㻜㻚㻜㻞㻞
㻜㻚㻜㻜㻠
㻜㻚㻜㻝㻝
㻜㻚㻜㻜㻣
㻜㻚㻜㻢㻣
㻜㻚㻜㻡㻝
㻭
㻭㻝
㼎
㻜㻚㻠㻡
㻜㻚㻜㻜
㻜㻚㻝㻣
㻜㻚㻜㻤
㻝㻚㻡㻜
㻝㻚㻝㻜
㻜㻚㻜㻝㻤
㻜㻚㻜㻜㻜
㻜㻚㻜㻜㻣
㻜㻚㻜㻜㻟
㻜㻚㻜㻡㻥
㻜㻚㻜㻠㻟
㼏
㻰
㻱
㼑
㻜㻚㻡㻜
㻜㻚㻜㻞㻜
㻴
㻱
㻝㻚㻡㻜
㻜㻚㻝㻜
㻙
㻝㻚㻣㻜
㻜㻚㻟㻜
㻜㻚㻟㻡
㻜㻚㻝㻜
㻜㻚㻝㻜
㻜㻚㻜㻡㻥
㻜㻚㻜㻜㻠
㻜㻚㻜㻢㻣
㻜㻚㻜㻝㻞
㻜㻚㻜㻝㻠
㻜㻚㻜㻜㻠
㻜㻚㻜㻜㻠
㻸
㻸㼜
㼤
㻙
㻙
㻙
㻙
㼥
㻙
㻹㻵㻸㻵㻹㻱㼀㻱㻾㻿
㻵㻺㻯㻴㻱㻿
㻜㻚㻜㻠㻥
㻰㻵㻹
㻹㻵㻺
㻙
㻹㻭㼄
㻜㻚㻟㻣
㻹㻵㻺
㻙
㻹㻭㼄
㻜㻚㻜㻝㻡
㼎㻞
㼑㻝
㼘㻝
㻝㻚㻞㻡
㻙
㻜㻚㻠㻡
㻙
㻜㻚㻜㻝㻤
Dimension in mm / inches
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
2013.07 - Rev.E
6/8
EMD3FHA / UMD3NFHA / IMD3AFRA
E
Data Sheet
lDimensions (Unit : mm)
㻰
㻭
㼏
UMT6
㼑
㻽
㻭㻟
㼎
㼤
㻿 㻭
㼑
㼥
㻿
㻿
㼎㻞
Pattern of terminal position areas
[Not a recommended pattern of soldering pads]
㻹㻵㻸㻵㻹㻱㼀㻱㻾㻿
㻵㻺㻯㻴㻱㻿
㻰㻵㻹
㻹㻵㻺
㻜㻚㻤㻜
㻜㻚㻜㻜
㻹㻭㼄
㻝㻚㻜㻜
㻜㻚㻝㻜
㻹㻵㻺
㻜㻚㻜㻟㻝
㻜㻚㻜㻜㻜
㻹㻭㼄
㻜㻚㻜㻟㻥
㻜㻚㻜㻜㻠
㻭
㻭㻝
㻭㻟
㼎
㼏
㻰
㻜㻚㻞㻡
㻜㻚㻢㻡
㻜㻚㻜㻝㻜
㻜㻚㻜㻞㻢
㻜㻚㻝㻡
㻜㻚㻝㻜
㻝㻚㻥㻜
㻝㻚㻝㻡
㻜㻚㻟㻜
㻜㻚㻞㻜
㻞㻚㻝㻜
㻝㻚㻟㻡
㻜㻚㻜㻜㻢
㻜㻚㻜㻜㻠
㻜㻚㻜㻣㻡
㻜㻚㻜㻠㻡
㻜㻚㻜㻝㻞
㻜㻚㻜㻜㻤
㻜㻚㻜㻤㻟
㻜㻚㻜㻡㻟
㻱
㼑
㻴
㻱
㻞㻚㻜㻜
㻜㻚㻞㻜
㻜㻚㻞㻡
㻜㻚㻝㻜
㻙
㻞㻚㻞㻜
㻜㻚㻡㻜
㻜㻚㻡㻡
㻜㻚㻟㻜
㻜㻚㻝㻜
㻜㻚㻝㻜
㻜㻚㻜㻣㻥
㻜㻚㻜㻜㻤
㻜㻚㻜㻝㻜
㻜㻚㻜㻜㻠
㻙
㻜㻚㻜㻤㻣
㻜㻚㻜㻞㻜
㻜㻚㻜㻞㻞
㻜㻚㻜㻝㻞
㻜㻚㻜㻜㻠
㻜㻚㻜㻜㻠
㻸㻝
㻸㼜
㻽
㼤
㼥
㻙
㻙
㻹㻵㻸㻵㻹㻱㼀㻱㻾㻿
㻵㻺㻯㻴㻱㻿
㻜㻚㻜㻢㻝
㻰㻵㻹
㻹㻵㻺
㻙
㻹㻭㼄
㻜㻚㻠㻜
㻹㻵㻺
㻙
㻹㻭㼄
㻜㻚㻜㻝㻢
㼎㻞
㼑㻝
㼘㻝
㻝㻚㻡㻡
㻙
㻜㻚㻢㻡
㻙
㻜㻚㻜㻞㻢
Dimension in mm / inches
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
2013.07 - Rev.E
7/8
EMD3FHA / UMD3NFHA / IMD3AFRA
E
Data Sheet
lDimensions (Unit : mm)
㻰
㻭
㼑
SMT6
㼏
㻽
㻭㻟
㼎
㼤
㻿 㻭
㼑
㼥
㻿
㻿
㼎㻞
Pattern of terminal position areas
[Not a recommended pattern of soldering pads]
㻹㻵㻸㻵㻹㻱㼀㻱㻾㻿
㻵㻺㻯㻴㻱㻿
㻰㻵㻹
㻹㻵㻺
㻝㻚㻜㻜
㻜㻚㻜㻜
㻹㻭㼄
㻝㻚㻟㻜
㻜㻚㻝㻜
㻹㻵㻺
㻜㻚㻜㻟㻥
㻜㻚㻜㻜㻜
㻹㻭㼄
㻜㻚㻜㻡㻝
㻜㻚㻜㻜㻠
㻭
㻭㻝
㻭㻟
㼎
㻜㻚㻞㻡
㻜㻚㻥㻡
㻜㻚㻜㻝㻜
㻜㻚㻜㻟㻣
㻜㻚㻞㻡
㻜㻚㻜㻥
㻞㻚㻤㻜
㻝㻚㻡㻜
㻜㻚㻠㻜
㻜㻚㻞㻡
㻟㻚㻜㻜
㻝㻚㻤㻜
㻜㻚㻜㻝㻜
㻜㻚㻜㻜㻠
㻜㻚㻝㻝㻜
㻜㻚㻜㻡㻥
㻜㻚㻜㻝㻢
㻜㻚㻜㻝㻜
㻜㻚㻝㻝㻤
㻜㻚㻜㻣㻝
㼏
㻰
㻱
㼑
㻴
㻱
㻞㻚㻢㻜
㻜㻚㻟㻜
㻜㻚㻠㻜
㻜㻚㻞㻜
㻙
㻟㻚㻜㻜
㻜㻚㻢㻜
㻜㻚㻣㻜
㻜㻚㻟㻜
㻜㻚㻞㻜
㻜㻚㻝㻜
㻜㻚㻝㻜㻞
㻜㻚㻜㻝㻞
㻜㻚㻜㻝㻢
㻜㻚㻜㻜㻤
㻙
㻜㻚㻝㻝㻤
㻜㻚㻜㻞㻠
㻜㻚㻜㻞㻤
㻜㻚㻜㻝㻞
㻜㻚㻜㻜㻤
㻜㻚㻜㻜㻠
㻸㻝
㻸㼜
㻽
㼤
㼥
㻙
㻙
㻹㻵㻸㻵㻹㻱㼀㻱㻾㻿
㻹㻭㼄
㻜㻚㻢㻜
㻵㻺㻯㻴㻱㻿
㻜㻚㻜㻤㻟
㻰㻵㻹
㻹㻵㻺
㻹㻵㻺
㻙
㻹㻭㼄
㻜㻚㻜㻞㻠
㼎㻞
㼑㻝
㼘㻝
㻞㻚㻝㻜
㻙
㻜㻚㻥㻜
㻙
㻜㻚㻜㻟㻡
Dimension in mm / inches
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
2013.07 - Rev.E
8/8
Notice
N o t e s
1) The information contained herein is subject to change without notice.
2) Before you use our Products, please contact our sales representative and verify the latest specifica-
tions :
3) Although ROHM is continuously working to improve product reliability and quality, semicon-
ductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no
responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.
4) Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
5) The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any other
parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of
such technical information.
6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communi-
cation, consumer systems, gaming/entertainment sets) as well as the applications indicated in
this document.
7) The Products specified in this document are not designed to be radiation tolerant.
8) For use of our Products in applications requiring a high degree of reliability (as exemplified
below), please contact and consult with a ROHM representative : transportation equipment (i.e.
cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety
equipment, medical systems, servers, solar cells, and power transmission systems.
9) Do not use our Products in applications requiring extremely high reliability, such as aerospace
equipment, nuclear power control systems, and submarine repeaters.
10) ROHM shall have no responsibility for any damages or injury arising from non-compliance with
the recommended usage conditions and specifications contained herein.
11) ROHM has used reasonable care to ensur the accuracy of the information contained in this
document. However, ROHM does not warrants that such information is error-free, and ROHM
shall have no responsibility for any damages arising from any inaccuracy or misprint of such
information.
12) Please use the Products in accordance with any applicable environmental laws and regulations,
such as the RoHS Directive. For more details, including RoHS compatibility, please contact a
ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting
non-compliance with any applicable laws or regulations.
13) When providing our Products and technologies contained in this document to other countries,
you must abide by the procedures and provisions stipulated in all applicable export laws and
regulations, including without limitation the US Export Administration Regulations and the Foreign
Exchange and Foreign Trade Act.
14) This document, in part or in whole, may not be reprinted or reproduced without prior consent of
ROHM.
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact us.
ROHM Customer Support System
http://www.rohm.com/contact/
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
R1102
A
相关型号：
IMD3AT109
Small Signal Bipolar Transistor, 0.05A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
ROHM
IMD6AT108
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon, ROHS COMPLIANT, SMT6, SC-74, 6 PIN
ROHM
IMD6AT109
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon,
ROHM
IMD6AT148
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon, SC-74, 6 PIN
ROHM
IMD700A-Q064X128-AA
MOTIX™ 电机控制器 IMD700A 是英飞凌的完全可编程电机控制器，将XMC1404 微控制器与6EDL7141 三相栅极驱动器 IC集成在一个封装中，以支持使用 BLDC 或 PMSM 电机开发下一代电池供电产品。 集成精密电源和电流分流放大器后，许多外围电路不再需要，从而减少了 PCB 空间，提高了系统封装的可能性。
INFINEON
IMD701A-Q064X128-AA
MOTIX™ 电机控制器 IMD701A 是英飞凌的完全可编程电机控制器，将XMC1404 微控制器与6EDL7141 三相栅极驱动器 IC集成在一个封装中，以支持使用 BLDC 或 PMSM 电机开发下一代电池供电产品。 集成精密电源和电流分流放大器后，许多外围电路不再需要，从而减少了 PCB 空间，提高了系统封装的可能性。
INFINEON
IMD8AT108
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon, SC-74, 6 PIN
ROHM
©2020 ICPDF网 联系我们和版权申明