ML5241 [ROHM]

电池电压检测断线检测警报输出睡眠功能省时测试模式;
ML5241
型号: ML5241
厂家: ROHM    ROHM
描述:

电池电压检测断线检测警报输出睡眠功能省时测试模式

电池 测试
文件: 总14页 (文件大小:880K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
FEDL5241-02  
1 December, 2020  
ML5241  
5 series Cell Li-ion Rechargeable Battery Protection IC  
General Description  
The ML5241 is a protection IC for the 3- to 5-cell Li-ion rechargeable battery pack. It detects individual  
cell overvoltage and battery cell open-wire, and alerts by alarm output signal. And the ML5241 has a SLEEP  
pin to reduce and minimize current consumption.  
Features  
3 to 5 cell high precision overvoltage detection function  
Overvoltage detection threshold and detection accuracy : 4.225V±25mV (0 °C to 60 °C)  
Overvoltage detection delay time  
: 2 sec(typ)  
Open-wire detection function  
Open-wire detection voltage  
Open-wire detection sink current  
Open-wire detection delay time  
: 0.6V(typ)  
: 100nA(typ)  
: 3.2sec(typ)  
Sleep function  
Set the SLEEP pin Hand stop all functions for low power consumption.  
3 types of alarm output  
Selected from CMOS / Nch open drain / Pch open drain  
Setting number of connected battery cells : defined with part-number  
5 cells = ML5241-001, 4 cells =ML5241-001A, 3 cells=ML5241-001B  
Low current consumption  
Operating  
: 1A(typ), 2A(max(0°C to 60°C)  
Sleep mode  
: 0.1A(typ), 0.4A(max) (-20°C to 85°C)  
Power supply voltage  
: +5V to +25V  
Operating temperature  
Package  
: -20°C to +85°C  
: 10 pin WSON  
FEDL5241-02  
ML5241  
Block Diagram  
VDD  
V5  
2
SLEEP  
OV  
detector  
V4  
V3  
V2  
V1  
/ALARM  
OW  
detector  
GND  
Pin Configuration (top view)  
N.C.  
1
2
3
4
SLEEP  
10  
9
VDD  
/ALARM  
V5  
V4  
8 GND  
7 V1  
6 V2  
V3 5  
2/14  
FEDL5241-02  
ML5241  
Pin Description  
Pin No.  
Pin  
I/O  
Description  
Power supply input pin.  
2
3
4
5
VDD  
V5  
I
I
I
Battery cell 5 high voltage input pin  
V4  
Battery cell 5 low voltage input and Battery cell 4 high voltage input pin.  
V3  
Battery cell 4 low voltage input and Battery cell 3 high voltage input pin.  
Battery cell 3 low voltage input and Battery cell 2 high voltage input pin.  
Should be connected to GND for the 3 cell series connected battery pack  
application.  
6
V2  
I
Battery cell 2 low voltage input and Battery cell 1 high voltage input pin.  
Should be connected to GND for the 3 or 4 cell series connected battery pack  
application.  
7
8
V1  
I
Ground pin.  
GND  
Alarm signal output pin.  
If CMOS output : Output level is Llevel(GND level) if overvoltage/  
open-wire is detected, else Hlevel (VDD power supply level).  
If Nch open drain output : Output level is Llevel(GND level) if overvoltage/  
open-wire is detected, else Hi-Zlevel.  
9
/ALARM  
O
If Pch open drain outputOutput level is Hlevel (VDD power supply level) if  
overvoltage/open-wire is detected, else Hi-Zlevel.  
Sleep control input pin. For setting the sleep status, input Hi-Z level, else input  
GND level. In sleep status, pulled-up with 500kΩ(typ) resisitor. In operating  
status, pulled up with 0.1μA(typ) constant current.  
10  
1
SLEEP  
N.C.  
I
No connect. Leave them electrically unconnected.  
Absolute Maximum Ratings  
GND= 0 V, Ta = 25 °C)  
Item  
Symbol  
VDD  
Condition  
Applied to VDD pin  
Rating  
Unit  
V
Supply Voltage  
Input Voltage  
Output Voltage  
Short-circuit  
output current  
Power dissipation  
Storage  
0.3 to +33  
VIN  
Applied to V5 to V1 and SLEEP pins  
Applied to /ALARM pin  
0.3 to VDD+0.3  
0.3 to VDD+0.3  
V
VOUT  
V
IOS  
PD  
Applied to /ALARM pin  
10  
690  
mA  
mW  
°C  
TSTG  
55 to +150  
temperature  
Recommended Operating Conditions  
GND= 0 V)  
Item  
Supply Voltage  
Operating temperature  
Symbol  
VDD  
TOP  
Condition  
Range  
5 to 25  
-20 to +85  
Unit  
V
°C  
3/14  
FEDL5241-02  
ML5241  
Electrical Characteristics  
DC Characteristics  
VDD=5 to 25VGND=0 VTa=-20 to +85°C  
Item  
Symbol  
Condition  
Each cell voltage =  
3.6V  
Min.  
Typ.  
Max.  
Unit  
V5 to V1 pins  
Input leakage current  
IVCL  
-1  
1
A  
SLEEP pin = H”  
/ALARM pin  
Houtput voltage  
/ALARM pin  
Loutput voltage  
/ALARM pin  
IOHA  
VOLA  
IOLKA  
VIH2  
VIL2  
IIH2  
IOH = -100A  
VDD-0.2  
VDD  
0.2  
V
V
IOL = 100A  
0
-2  
Output state is Hi-Z  
2
A  
Output leakage current  
SLEEP pin  
0.8×VDD  
0
VDD  
"H" input voltage  
SLEEP pin  
"L" input voltage  
SLEEP pin "H" input  
current  
VIH = VDD  
0.2×VDD  
2
µA  
nA  
SLEEP pin "L" input  
current  
IIL2  
VDD = 18V, VIL = GND  
300  
200  
100  
500  
20  
SLEEP pin  
Pull-up resistor  
RSLP  
1000  
kΩ  
Supply Current Characteristics  
VDD=5 to 25VGND=0 VTa=-20 to +85°C  
Item  
Symbol  
IDD  
Condition  
Each cell voltage=3.6V  
No output load  
Min.  
Typ.  
Max.  
Unit  
1
2
µA  
Ta=0 to 60°C  
Current consumption  
in normal operation  
Each cell voltage=3.6V  
No output load  
IDDT  
1
3
µA  
µA  
Ta=20 to 85°C  
Each cell voltage=3.6V  
No output load  
Current consumption  
in sleep mode  
IDDS  
0.1  
0.4  
Ta=20 to 85°C  
(Note) VDD pin current consumption. V5 to V1 pin input current, /ALARM pin output current is not included.  
4/14  
FEDL5241-02  
ML5241  
Code 001: Detection Threshold ChracteristicsTa=0°C to 60°C)  
VDD=18VGND=0 VTa=0 to 60°C  
Item  
Symbol  
VOV  
Condition  
Min.  
Typ.  
Max.  
Unit  
Overvoltage detection  
threshold  
4.200  
4.225  
4.250  
V
Overvoltage release  
threshold  
VOVR  
VOW  
IOW  
3.975  
0.5  
4.025  
0.6  
4.075  
0.7  
V
V
Open-wire detection /  
release threshold  
Open-wire detection sink  
current  
50  
150  
300  
nA  
Quick test mode  
transition/release  
VDD-V5 pin voltage  
difference  
VTST  
Ta=25°C  
3
10  
V
Code 001: Detection delay time characteristticsTa=0°C to 60°C)  
VDD=18VGND=0 VTa=0 to 60°C  
Item  
Symbol  
tOV  
Condition  
Min.  
300)  
Typ.  
Max.  
Unit  
Overvoltage/open-wire  
detection cycle  
Overvoltage detection  
delay time  
400  
500  
ms  
Defined with  
detection cycle  
tDOV  
5
8
6
9
cycle  
cycle  
Open-wire  
detection/release delay  
time  
Defined with  
detection cycle  
tDOW  
Quick test mode  
Overvoltage/open-wire  
detection cycle  
Quick test mode  
Overvoltage detection  
delay time,  
tOVW  
Ta=25°C  
75  
100  
125  
1
ms  
Defined with  
detection cycle  
tDOVW  
time  
open-wire  
detection/release delay  
time  
5/14  
FEDL5241-02  
ML5241  
Functional Description  
Selecting the number of battery cells  
Number of battery cells is determined by part number.  
5-cells=ML5241-001, 4-cells=ML5241-001A, 3-cells=ML5241-001B  
/ALARM output pin  
/ALARM pin output status for overvoltage/open-wire detected state.  
/ALARM pin output status  
CMOS  
Nch open drain  
Code 001  
Pch open drain  
Overvoltage/open-wire  
Llevel  
Hlevel  
Llevel  
Hlevel  
detected state  
Undetected state  
Hi-Zlevel  
Hi-Zlevel  
Handling VDD pin and V1 to V5 pins  
Since the VDD pin is the power supply input, put a noise elimination RC filter in front of the VDD input  
for stabilization. The resistor value of this noise filter should be adjusted so that the voltage drop across the  
resistor is smaller than 0.3 V.  
The V1 to V5 pins are the monitor pins for individual cell voltages. Put a noise elimination RC filter in  
front of each battery cell to prevent false detection.  
Unused pin Treatment  
The followtin table shows how to handle unused pins  
Unused pins  
V1 , V2  
Recommended treatment  
Connected to GND pin  
Connected to GND pin  
SLEEP  
Power-on/Power-off sequence  
Battery cells can be connected in any order, but it is recommend that the lowest voltage cell is connected  
first, and then connection continues from lower to higher voltage cells, and the highest voltage cell is  
connected last. There are no restrictions on the power supply voltage rise time at power-on, and power-off  
sequence or power supply voltage fall time at power-off.  
It may transition to the open-wire or overvoltage detection state if it takes long time to connect all cells.  
6/14  
FEDL5241-02  
ML5241  
Overvoltage detection function  
After power-on, overvoltage detection is started with cycle of 400ms(typ) (overvoltage detection cycle  
tOV ). When any one or more battery cell voltages reach or exceed the overvoltage detection threshold VOV  
for series six times, it detects overvoltage state. And if /ALARM pin output type is CMOS output,  
/ALARM pin output changes from Hlevel to Llevel.  
If the state in which cell voltage of all cell is lower than overvoltage detection threshold VOV is detected  
for series two times, detection delay time counting is initialized.  
After the overvoltage detection, if the cell voltage of all cell is lower than overvoltage relase threshold  
VOVR , and if /ALARM pin output type is CMOS output, /ALARM pin output changes from Llevel to H”  
level.  
VOV  
Cell monitor pin voltage  
VOVR  
difference (Vn+1-Vn)  
tOV tOV tOV  
tOV tOV tOV tOV  
tOV tOV  
tOV  
tOV tOV tOV  
tDOV  
VDD  
VDD  
/ALARM  
Status  
0V  
Detection delay  
counting  
Overvoltage is  
detected  
Overvoltage is not  
detected  
Overvoltage is  
not detected  
VOV  
Cell monitor pin voltage  
VOVR  
difference (Vn+1-Vn)  
tOV tOV tOV  
tOV tOV tOV tOV  
tOV tOV  
tOV  
tOV tOV tOV  
tDOV  
VDD  
VDD  
/ALARM  
Status  
0V  
Detection delay  
counting  
Overvoltage is  
detected  
Overvoltage is not  
detected  
Overvoltage is  
not detected  
VOV  
Cell monitor pin voltage  
VOVR  
difference (Vn+1-Vn)  
tOV tOV tOV tOV tOV tOV  
tOV tOV tOV tOV tOV tOV tOV  
tDOV  
VDD  
VDD  
/ALARM  
Status  
0V  
Overvoltage is not  
detected  
Detection delay  
counting  
Overvoltage is  
detected  
Detection delay  
counting  
Initialize Detection  
delay counting  
Overvoltage is  
not detected  
7/14  
FEDL5241-02  
ML5241  
Open-wire detection function  
After power-on, open-wire detection is started with cycle of 400ms(typ) (open-wire detection cycle tOW ).  
When any one or more battery cell voltages reach or below the open-wire detection threshold VOW for series  
nine times. It detects open-weire state. And if /ALARM output type is CMOS output, /ALARM pin output  
changes from “H” level to “L” level.  
If the state in which voltage of all cell is higher than open-wire detection threshold VOW is detected for  
once, detection delay time counting is initialized.  
After the open-wire detection, if the state in which cell voltage of all cell is higher than open-wire  
detection threshold VOW is detected for series nine times, and if /ALARM output type is CMOS output,  
/ALARM pin output changes from Llevel to Hlevel.  
If the state in which cell voltage of one or more cell is lower than open-wire detection threshold VOW is  
detected for once, detection delay time counting is initialized.  
Cell monitor pin voltage  
VOW  
difference (Vn+1-Vn)  
tOW tOW  
tDOW  
tOW  
tOW  
tOW tOW tOW  
tDOW  
tOW tOW tOW  
VDD  
VDD  
/ALARM  
Status  
0V  
Open-wire is not  
Open-wire is detected  
detected  
Open-wire is not  
detected  
Sleep function  
Set the SLEEP pin input Hlevel and all function is stopped, and ML5241 is in the low power  
consumtion sleep mode.  
In the sleep mode, the SLEEP pin is pulled up with 500kΩ(typ) resistor and the /ALARM pin is in the  
same state as overvoltage/open-wire detection shown below..  
/ALARM pin outpout in sleep mode  
CMOS  
Nch open drain  
Pch open drain  
Code 001  
Llevel  
Llevel  
Hlevel  
If the SLEEP pin is set Llevel, the ML5241 powe-ups and its state changes from sleep mode to  
normal operation, and overvoltage and open-wire detection are started. In the normal operation state, 500k  
Ω(typ) pull-up resistor is disconnected and pulled up with 100nA(typ) current source.  
8/14  
FEDL5241-02  
ML5241  
Quick test mode  
In the Quick test mode, overvoltage/open-wire detection cycle time is set 100ms(typ), overvoltage  
detectin delay time and openwire detection/release delay time are set equal or shorter than one detection  
cycle.  
If the voltage of VDD pin is more than 10V higher than V5 pin, the state change into this quick test mode.  
For recovering from quick test mode to normal mode, set the voltage of VDD pin lower than “the voltage  
of V5 + 3V”.  
This test mode can decrease the test time after board mounting.  
VDD  
VDD  
VTST  
V5  
V5  
Status Monitoring state  
Quick test mode  
Monitoring state  
9/14  
FEDL5241-02  
ML5241  
Redefinition of overvoltage Detection/Release threshold Range and Step  
The overvoltage detection/release thresholds can be redefined as shown in the following table.  
Since some combinations are unavailable, contact us for details  
Detection voltage  
Overvoltage detection voltage  
Overvoltage release voltage  
Setting range  
4.0V to 4.4V  
3.8V to 4.2V  
Step voltage  
25mV  
25mV  
Redefinition of overvoltage Detection Delay time and open-wire Detection/Relase Delay  
Time Range  
The overvoltrage detection delay time and open-wire detection/release delay time can be redefined as  
shown in the following table.  
Delay time  
Settable time (detection cycle time)  
Unit  
1
to  
2
1
to  
2
3
to  
4
3
to  
4
5
to  
6
5
to  
6
7
to  
8
7
to  
8
9
11  
to  
12  
11  
to  
13  
to  
4
13  
to  
14  
Overvoltage detection delay  
time  
to  
10  
9
To  
10  
cycle  
Open-wire detection/release  
cycle  
delay time  
12  
Delay time  
Settable time (detection cycle=400ms)  
Unit  
sec  
0.4  
to  
1.2  
to  
2.0  
to  
2.8  
to  
3.6  
to  
4.4  
to  
5.2  
to  
5.6  
5.2  
to  
Overvoltage detection delay  
time  
0.8  
0.4  
to  
1.6  
1.2  
to  
2.4  
2.0  
to  
3.2  
2.8  
to  
4.0  
3.6  
to  
4.8  
4.4  
to  
Open-wire detection/release  
sec  
delay time  
0.8  
1.6  
2.4  
3.2  
4.0  
4.8  
5.6  
10/14  
FEDL5241-02  
ML5241  
Application Circuit Example (5-cell system)  
PACK(+)  
RVDD  
VDD  
CVDD  
V5  
SLEEP  
RCELL  
RCELL  
RCELL  
CCELL  
V4  
V3  
CCELL  
CCELL  
From Controller  
V2  
V1  
RCELL  
RCELL  
CCELL  
CCELL  
To Controller  
/ALARM  
GND  
PACK(-)  
Recommended values for External Components  
Recommended  
Component  
Value  
RVDD  
CVDD  
RCELL  
CCELL  
1kΩ  
4.7F  
1kΩ  
0.1F  
11/14  
FEDL5241-02  
ML5241  
Package Dimensions  
Caution regarding surface mount type packages  
Surface mount type packages are susceptible to heat applied in solder reflow and moisture absorbed during  
storage. Please contact your local ROHM sales representative for recommended mounting conditions (reflow  
sequence, temperature and cycles) and storage environment.  
12/14  
FEDL5241-02  
ML5241  
Revision History  
Page  
Before  
Document No.  
Issue date  
Revision Description  
After  
rvision  
revision  
FEDL5241-01  
FEDL5241-02  
2019.07.23  
2020.12.01  
14  
Initial release.  
Changed Company name  
14  
Changed Notes”  
13/14  
FEDL5241-02  
ML5241  
Notes  
1) The information contained herein is subject to change without notice.  
2) When using LAPIS Technology Products, refer to the latest product information (data sheets, user’s manuals,  
application notes, etc.), and ensure that usage conditions (absolute maximum ratings, recommended operating  
conditions, etc.) are within the ranges specified. LAPIS Technology disclaims any and all liability for any  
malfunctions, failure or accident arising out of or in connection with the use of LAPIS Technology Products  
outside of such usage conditions specified ranges, or without observing precautions. Even if it is used within  
such usage conditions specified ranges, semiconductors can break down and malfunction due to various factors.  
Therefore, in order to prevent personal injury, fire or the other damage from break down or malfunction of  
LAPIS Technology Products, please take safety at your own risk measures such as complying with the derating  
characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe  
procedures. You are responsible for evaluating the safety of the final products or systems manufactured by you.  
3) Descriptions of circuits, software and other related information in this document are provided only to illustrate  
the standard operation of semiconductor products and application examples. You are fully responsible for the  
incorporation or any other use of the circuits, software, and information in the design of your product or system.  
And the peripheral conditions must be taken into account when designing circuits for mass production. LAPIS  
Technology disclaims any and all liability for any losses and damages incurred by you or third parties arising  
from the use of these circuits, software, and other related information.  
4) No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of  
LAPIS Technology or any third party with respect to LAPIS Technology Products or the information contained  
in this document (including but not limited to, the Product data, drawings, charts, programs, algorithms, and  
application examplesetc.). Therefore LAPIS Technology shall have no responsibility whatsoever for any  
dispute, concerning such rights owned by third parties, arising out of the use of such technical information.  
5) The Products are intended for use in general electronic equipment (AV/OA devices, communication, consumer  
systems, gaming/entertainment sets, etc.) as well as the applications indicated in this document. For use of our  
Products in applications requiring a high degree of reliability (as exemplified below), please be sure to contact a  
LAPIS Technology representative and must obtain written agreement: transportation equipment (cars, ships,  
trains, etc.), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical  
systems, servers, solar cells, and power transmission systems, etc. LAPIS Technology disclaims any and all  
liability for any losses and damages incurred by you or third parties arising by using the Product for purposes  
not intended by us. Do not use our Products in applications requiring extremely high reliability, such as  
aerospace equipment, nuclear power control systems, and submarine repeaters, etc.  
6) The Products specified in this document are not designed to be radiation tolerant.  
7) LAPIS Technology has used reasonable care to ensure the accuracy of the information contained in this  
document. However, LAPIS Technology does not warrant that such information is error-free and LAPIS  
Technology shall have no responsibility for any damages arising from any inaccuracy or misprint of such  
information.  
8) Please use the Products in accordance with any applicable environmental laws and regulations, such as the  
RoHS Directive. LAPIS Technology shall have no responsibility for any damages or losses resulting  
non-compliance with any applicable laws or regulations.  
9) When providing our Products and technologies contained in this document to other countries, you must abide  
by the procedures and provisions stipulated in all applicable export laws and regulations, including without  
limitation the US Export Administration Regulations and the Foreign Exchange and Foreign Trade Act..  
10) Please contact a ROHM sales office if you have any questions regarding the information contained in this  
document or LAPIS Technology's Products.  
11) This document, in part or in whole, may not be reprinted or reproduced without prior consent of LAPIS  
Technology.  
(Note) “LAPIS Technology” as used in this document means LAPIS Technology Co., Ltd.  
Copyright 2020 LAPIS Technology Co., Ltd.  
2-4-8 Shinyokohama, Kouhoku-ku, Yokohama 222-8575, Japan  
https://www.lapis-tech.com/en/  
14/14  

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