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QS5Y1 [ROHM]

Midium Power Transistors (30V / 3A); 煤层炮功率晶体管（ 30V / 3A ）
QS5Y1
型号： QS5Y1
厂家： ROHM    ROHM
描述：

Midium Power Transistors (30V / 3A)
煤层炮功率晶体管（ 30V / 3A ）

晶体 晶体管
文件： 总8页 (文件大小：1130K)
中文：  中文翻译
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Data Sheet  
Midium Power Transistors (±30V / ±3A)  
QS5Y1  
Structure  
Dimensions (Unit : mm)  
PNP/NPN Silicon epitaxial planar transistor  
TSMT5  
Features  
1) Low saturation voltage, typically  
V
CE (sat) = -0.40V (Max.) (IC / IB= -1A / -50mA)  
VCE (sat) = 0.40V (Max.) (IC / IB= 1A / 50mA)  
2) High speed switching  
(1) Tr.1 Base  
(2) Emitter  
(3) Tr.2 Base  
(4) Tr.2 Collector  
(5) Tr.1 Collector  
Abbreviated symbol : Y01  
Applications  
Low Frequency Amplifier  
Driver  
Packaging specifications  
Inner circuit (Unit : mm)  
Package  
Code  
TSMT5  
TR  
(5)  
(4)  
Type  
Basic ordering unit (pieces) 3000  
Tr.1  
Tr.2  
(3)  
(1) Tr.1 Base  
(2) Emitter  
(3) Tr.2 Base  
(4) Tr.2 Collector  
(5) Tr.1 Collector  
Absolute maximum ratings (Ta = 25C)  
ꢀ<Tr.1>  
(2)  
(1)  
Parameter  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Symbol  
Limits  
-30  
-30  
-6  
Unit  
V
VCBO  
VCEO  
VEBO  
IC  
V
V
DC  
-3  
A
Collector current  
*1  
Pulsed  
ICP  
-6  
A
ꢀ<Tr.2>  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Limits  
Unit  
V
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
30  
30  
6
V
V
DC  
3
A
Collector current  
*1  
Pulsed  
ICP  
6
A
ꢀ<Tr.1 and Tr.2>  
Parameter  
Symbol  
Limits  
0.5  
Unit  
W/Total  
W/Total  
W/Element  
C  
*2  
PD  
*3  
Power dissipation  
PD  
1.25  
*3  
PD  
0.9  
Junction temperature  
Tj  
150  
Range of storage temperature  
Tstg  
-55 to 150  
C  
*1 Pw=10ms, Single Pulse  
*2 Mounted on a recommended land.  
*3 Mounted on a 25 x 25 x 0.8[mm] ceramic board.  
www.rohm.com  
2011.02 - Rev.A  
© 2011 ROHM Co., Ltd. All rights reserved.  
1/7  
QS5Y1  
Data Sheet  
Electrical characteristics (Ta=25°C)  
ꢀ<Tr.1>  
Parameter  
Symbol Min.  
Typ.  
Max.  
Unit  
V
Conditions  
IC= -1mA  
BVCEO  
BVCBO  
BVEBO  
ICBO  
Collector-emitter breakdown voltage  
Collector-base breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
Emitter cut-off current  
-30  
-30  
-6  
-
-
-
-
IC= -100μA  
IE= -100μA  
VCB= -30V  
-
V
-
-
V
-
-1  
A  
A  
mV  
-
IEBO  
VEB= -4V  
-
-
-200  
-
-1  
*1  
VCE(sat)  
IC=-1A, IB=-50mA  
Collector-emitter staturation voltage  
DC current gain  
-
-400  
500  
hFE  
VCE= -2V, IC= -500mA  
200  
VCE= -10V  
IE=100mA, f=100MHz  
*1  
fT  
Transition frequency  
-
-
300  
26  
-
-
MHz  
pF  
VCB= -10V, IE=0A  
f=1MHz  
Cob  
Collector output capacitance  
t
Turn-on time  
Storage time  
Fall time  
-
-
-
35  
210  
15  
-
-
-
ns  
ns  
ns  
on *2  
IC= -1.5A, IB1= -150mA,  
t
stg *2  
~_  
IB2=150mA, VCC -12V  
tf  
*2  
*1 Pulsed  
*2 See switching time test circuit  
ꢀ<Tr.2>  
Parameter  
Symbol Min.  
Typ.  
Max.  
Unit  
V
Conditions  
IC= 1mA  
BVCEO  
BVCBO  
BVEBO  
ICBO  
Collector-emitter breakdown voltage  
Collector-base breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
Emitter cut-off current  
30  
30  
6
-
-
-
IC= 100μA  
-
V
IE= 100μA  
-
-
V
VCB= 30V  
-
-
1
A  
A  
mV  
-
IEBO  
VEB= 4V  
-
-
200  
-
1
*1  
VCE(sat)  
hFE  
IC= 1A, IB= 50mA  
VCE= 2V, IC= 500mA  
Collector-emitter staturation voltage  
DC current gain  
-
400  
500  
200  
VCE= 10V  
IE=-100mA, f=100MHz  
*1  
fT  
Transition frequency  
-
-
270  
16  
-
-
MHz  
pF  
VCB= 10V, IE=0A  
f=1MHz  
Cob  
Collector output capacitance  
t
Turn-on time  
Storage time  
Fall time  
-
-
-
25  
300  
20  
-
-
-
ns  
ns  
ns  
on *2  
IC= 1.5A, IB1= 150mA,  
t
stg *2  
~_  
IB2=-150mA, VCC 12V  
tf  
*2  
*1 Pulsed  
*2 See switching time test circuit  
www.rohm.com  
© 2011 ROHM Co., Ltd. All rights reserved.  
2011.02 - Rev.A  
2/7  
Data Sheet  
QS5Y1  
ꢀ
Electrical characteristic curves (Ta=25C)  
〈Tr.1〉  
Fig.1 Typical Output Characteristics  
Fig.2 DC Current Gain vs. Collector Current (Ⅰ)  
-2.5mA  
-5.0mA  
1000  
100  
10  
-0.5  
-0.4  
-0.3  
-0.2  
-0.1  
0.0  
Ta=25℃  
-2.0mA  
-1.5mA  
VCE=-5V  
-2V  
-1.0mA  
IB=-0.5mA  
Ta=25℃  
0.0  
-0.5  
-1.0  
-1.5  
-2.0  
-1  
-10  
-100  
-1000  
-10000  
COLECTOR TO EMITTER VOLTAGE:VCE[V]  
COLLECTOR CURRENT :IC[mA]  
Fig.4 Collector-Emitter Saturation Voltage vs. Collector Current(Ⅰ)  
Fig.3 DC Current Gain vs. Collector Current(Ⅱ)  
1000  
100  
10  
-1  
VCE=-2V  
Ta=25°C  
Pulsed  
-0.1  
Ta=125°C  
75°C  
25°C  
-40°C  
IC/IB=50  
20  
-0.01  
10  
-0.001  
-1  
-10  
-100  
-1000  
-10000  
-1  
-10  
-100  
-1000  
-10000  
COLLECTOR CURRENT :IC[mA]  
COLLECTOR CURRENT :IC[mA]  
Fig.5 Collector-Emitter Saturation Voltage vs.Collector Current (Ⅱ)  
Fig.6 Ground Emitter Propagation Characteristics  
-1  
-10000  
-1000  
-100  
-10  
VCE=-2V  
IC/IB=20  
Pulsed  
Ta=125°C  
75°C  
25°C  
-40°C  
-0.1  
Ta=125°C  
75°C  
25°C  
-40°C  
-1  
-0.01  
0
-0.2  
-0.4  
-0.6  
-0.8  
-1  
-1.2  
-1.4  
-1  
-10  
-100  
-1000  
-10000  
BASE TO EMITTER VOLTAGE :VBE[V]  
COLLECTOR CURRENT :IC[mA]  
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© 2011 ROHM Co., Ltd. All rights reserved.  
3/7  
2011.02 - Rev.A  
Data Sheet  
QS5Y1  
ꢀ
Fig.7 Emitter input capacitance vs. Emitter-Base Voltage  
Collector output capacitance vs.Collector-Base Voltage  
Fig8. Gain Bandwidth Product vs. Emitter Current  
1000  
1000  
100  
10  
Ta=25°C  
f=1MHz  
IE=0A  
IC=0A  
Cib  
100  
10  
1
Cob  
Ta=25°C  
VCE=-10V  
Pulsed  
10  
100  
1000  
-0.1  
-1  
-10  
-100  
COLLECTOR - BASE VOLTAGE : VCB (V)  
EMITTER - BASE VOLTAGE : VEB (V)  
EMITTER CURRENT :IE[mA]  
Fig9. Safe Operating Area  
-10  
-1  
1ms  
10ms  
100ms  
-0.1  
DC  
(Mounted on a recommended land)  
-0.01  
Ta=25°C  
When one element operated  
Single non repetitive pulse  
-0.001  
-0.1  
-1  
-10  
-100  
COLLECTOR TO EMITTER VOLTAGE :VCE(V)  
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© 2011 ROHM Co., Ltd. All rights reserved.  
4/7  
2011.02 - Rev.A  
Data Sheet  
QS5Y1  
ꢀ
〈Tr.2〉  
Fig.1 Typical Output Characteristics  
2.5mA  
Fig.2 DC Current Gain vs. Collector Current ( I )  
5mA  
0.5  
1000  
100  
10  
Ta=25℃  
2mA  
1.5mA  
1.0mA  
0.4  
0.3  
0.2  
0.1  
0.0  
VCE=5V  
2V  
IB=0.5mA  
Ta=25℃  
1
10  
100  
1000  
10000  
0
0.5  
1
1.5  
2
COLLECTOR CURRENT : IC[mA]  
COLECTOR TO EMITTER VOLTAGE :VCE[V]  
Fig3. DC Current Gain vs. Collector Current ( II )  
Fig.4 Collector-Emitter Saturation Voltage vs. Collector Current ( I )  
1
1000  
100  
10  
VCE=2V  
Ta=25℃  
Pulsed  
0.1  
Ta=125°C  
75°C  
25°C  
-40°C  
0.01  
IC/IB=50  
20  
10  
0.001  
1
10  
100  
1000  
10000  
1
10  
100  
1000  
10000  
COLLECTOR CURRENT : IC[mA]  
COLLECTOR CURRENT : IC[mA]  
Fig.5 Collector-Emitter Saturation Voltage vs. Collector Current ( II )  
1
Fig.6 Ground Emitter Propagation Characteristics  
10000  
1000  
100  
10  
VCE=2V  
Ta=125°C  
75°C  
0.1  
25°C  
-40°C  
Ta=125°C  
75°C  
0.01  
25°C  
-40°C  
IC/IB=20  
Pulsed  
0.001  
1
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
1
10  
100  
1000  
10000  
COLLECTOR CURRENT : IC[mA]  
BASE TO EMITTER VOLTAGE : VBE[V]  
www.rohm.com  
© 2011 ROHM Co., Ltd. All rights reserved.  
5/7  
2011.02 - Rev.A  
Data Sheet  
QS5Y1  
ꢀ
Fig.7 Emitter Input Capacitance vs. Emitter-Base Voltage  
Collector Output Capacitance vs. Collector-Base Voltage  
Fig.8 Gain Bandwidth Product vs. Emitter Current  
1000  
1000  
100  
10  
Ta=25°C  
f=1MHz  
IE=0A  
Ta=25°C  
VCE=10V  
Pulsed  
Cib  
IC=0A  
100  
10  
1
Cob  
0.1  
1
10  
100  
-10  
-100  
-1000  
COLLECTOR - BASE VOLTAGE : VCB (V)  
EMITTER - BASE VOLTAGE : VEB (V)  
EMITTER CURRENT : IE[mA]  
Fig.9 Safe Operating Area  
10  
1
1ms  
10ms  
100ms  
0.1  
DC  
(Mounted on a recommended land)  
0.01  
0.001  
Ta=25°C  
When one element operated  
Single non repetitive pulse  
0.1  
1
10  
100  
COLLECTOR TO EMITTER VOLTAGE : VCE[V]  
www.rohm.com  
© 2011 ROHM Co., Ltd. All rights reserved.  
6/7  
2011.02 - Rev.A  
QS5Y1  
Data Sheet  
Switching time test circuit  
RL=8.2Ω  
ꢀ<Tr.1>  
IB1  
VIN  
Pw  
IC  
_
VCC -12V  
~
IB2  
_
~
Pw 50μs  
DUTY CYCLE≦1%  
IB2  
BASE CURRENT WAVEFORM  
IB1  
ton  
tstg  
tf  
COLLECTOR CURRENT WAVEFORM  
90%  
10%  
IC  
ꢀ<Tr.2>  
RL=8.2Ω  
V
IN  
B1  
I
C
I
VCC  
12V  
~_  
IB2  
Pw 50μs  
~_  
Pw  
DUTY CYCLE≦1%  
BASE CURRENT WAVEFORM  
B1  
I
IB2  
ton  
tstg  
tf  
COLLECTOR CURRENT WAVEFORM  
90%  
IC  
10%  
www.rohm.com  
© 2011 ROHM Co., Ltd. All rights reserved.  
2011.02 - Rev.A  
7/7  
Notice  
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ROHM Customer Support System  
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R1120A  

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