QS8M13 [ROHM]
4V Drive Nch + Pch MOSFET; 4V驱动N沟道+ P沟道MOSFET
| 型号： | QS8M13 |
| 厂家： | 
ROHM |
| 描述： | 4V Drive Nch + Pch MOSFET |
| 文件： | 总11页 (文件大小：1395K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Data Sheet
4V Drive Nch + Pch MOSFET
QS8M13
Structure
Dimensions (Unit : mm)
TSMT8
Silicon N-channel MOSFET/
Silicon P-channel MOSFET
(8) (7) (6) (5)
Features
1) Low on-resistance.
(1) (2) (3) (4)
2) High power package(TSMT8).
3) Low voltage drive(4V drive).
Abbreviated symbol : M13
Application
Switching
Inner circuit
(8)
(7)
(6)
(5)
Packaging specifications
Package
Taping
TCR
3000
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
∗2
∗2
Type
Code
Basic ordering unit (pieces)
∗1
∗1
QS8M13
(1)
(2)
(3)
(4)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
Absolute maximum ratings (Ta = 25C)
Parameter Symbol
Limits
Unit
Tr1 : N-ch Tr2 : P-ch
Drain-source voltage
VDSS
VGSS
ID
30
20
6
18
1.0
18
30
20
5
V
V
A
A
A
A
Gate-source voltage
Continuous
Pulsed
Drain current
*1
IDP
Is
18
1.0
18
Continuous
Pulsed
Source current
(Body Diode)
*1
*2
Isp
1.5
1.25
150
W / TOTAL
PD
Power dissipation
W / ELEMENT
Channel temperature
Tch
C
C
55 to 150
Range of storage temperature
*1 Pw10s, Duty cycle1%
Tstg
*2 Mounted on a ceramic board.
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© 2011 ROHM Co., Ltd. All rights reserved.
2011.05 - Rev.A
1/10
Data Sheet
QS8M13
ꢀ
Electrical characteristics (Ta = 25C)
<Tr1(Nch)>
Parameter
Symbol
IGSS
Min.
Typ.
-
Max.
Unit
A VGS=20V, VDS=0V
ID=1mA, VGS=0V
A VDS=30V, VGS=0V
Conditions
Gate-source leakage
-
30
-
10
Drain-source breakdown voltage V (BR)DSS
-
-
1
2.5
28
35
39
-
V
Zero gate voltage drain current
Gate threshold voltage
IDSS
-
VGS (th)
1.0
-
-
V
VDS=10V, ID=1mA
ID=6A, VGS=10V
ID=6A, VGS=4.5V
ID=6A, VGS=4.0V
VDS=10V, ID=6A
20
25
28
-
Static drain-source on-state
resistance
*
RDS (on)
m
S
-
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
l Yfs l*
Ciss
3.0
-
-
-
-
-
-
-
-
-
-
390
150
70
8
-
pF VDS=10V
pF VGS=0V
pF f=1MHz
ns ID=3A, VDD 15V
ns VGS=10V
ns RL=5
Coss
Crss
-
-
td(on)
-
*
tr
40
35
7
-
*
Turn-off delay time
Fall time
td(off)
-
*
tf *
Qg *
Qgs *
-
ns RG=10
nC ID=6A, VDD 15V
nC VGS=5V
nC
Total gate charge
Gate-source charge
Gate-drain charge
5.5
1.5
2.1
-
-
Qgd
-
*
*Pulsed
Body diode characteristics (Source-Drain) (Ta = 25C)
Parameter
Forward Voltage
Symbol
Min.
-
Typ.
-
Max.
1.2
Unit
V
Conditions
*
VSD
Is=6A, VGS=0V
*Pulsed
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© 2011 ROHM Co., Ltd. All rights reserved.
2/10
2011.05 - Rev.A
Data Sheet
QS8M13
ꢀ
Electrical characteristics (Ta = 25C)
<Tr2(Pch)>
Parameter
Symbol
IGSS
Min.
-
Typ.
-
Max.
Unit
A VGS=20V, VDS=0V
ID=1mA, VGS=0V
A VDS=30V, VGS=0V
Conditions
Gate-source leakage
10
Drain-source breakdown voltage V (BR)DSS
30
-
-
V
Zero gate voltage drain current
Gate threshold voltage
IDSS
-
1
VGS (th)
1.0
-
2.5
V
VDS=10V, ID=1mA
ID=5A, VGS=10V
ID=2.5A, VGS=4.5V
ID=2.5A, VGS=4.0V
VDS=10V, ID=5A
-
-
-
3
-
-
-
-
-
-
-
-
-
-
28
40
45
-
39
56
63
-
Static drain-source on-state
resistance
*
RDS (on)
m
S
*
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
l Yfs l
Ciss
1100
150
130
9
-
pF VDS=10V
pF VGS=0V
Coss
Crss
-
-
pF f=1MHz
td(on)
-
ns ID=2.5A, VDD 15V
ns VGS=10V
ns RL=6
*
tr
40
90
55
10
3.6
3.0
-
*
Turn-off delay time
Fall time
td(off)
-
*
tf *
Qg *
Qgs *
-
ns RG=10
Total gate charge
Gate-source charge
Gate-drain charge
-
nC ID=5A, VDD 15V
nC VGS=5V
nC
-
Qgd
-
*
*Pulsed
Body diode characteristics (Source-Drain) (Ta = 25C)
Parameter
Forward Voltage
Symbol
Min.
-
Typ.
-
Max.
Unit
V
Conditions
*
VSD
1.2
Is=5A, VGS=0V
*Pulsed
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© 2011 ROHM Co., Ltd. All rights reserved.
3/10
2011.05 - Rev.A
Data Sheet
QS8M13
ꢀ
Electrical characteristic curves (Ta=25C)
〈Tr.1(Nch)〉
Fig.2 Typical Output Characteristics (Ⅱ)
Fig.1 Typical Output Characteristics (Ⅰ)
6
6
5
4
3
2
1
0
Ta=25℃
Pulsed
Ta=25℃
Pulsed
VGS=10.0V
VGS=4.5V
VGS=4.0V
VGS=10.0V
VGS=4.5V
VGS=4.0V
5
4
3
2
1
0
VGS=2.5V
VGS=3.0V
VGS=2.8V
VGS=2.8V
VGS=2.5V
VGS=2.0V
VGS=2.0V
0
0.2
0.4
0.6
0.8
1
0
2
4
6
8
10
Drain-Source Voltage : VDS [V]
Drain-Source Voltage : VDS [V]
Fig.4 Static Drain-Source On-State Resistance vs. Drain Current
Fig.3 Static Drain-Source On-State Resistance vs. Drain Current
1000
1000
VGS=10V
pulsed
Ta=25℃
Pulsed
Ta= 125℃
Ta= 75°C
Ta= 25°C
Ta= - 25°C
100
10
1
100
10
1
VGS=4.0V
VGS=4.5V
VGS=10V
0.01
0.1
1
10
100
0.01
0.1
1
10
Drain Current : ID [A]
Drain Current : ID [A]
Fig.6 Static Drain-Source On-State Resistance vs. Drain Current
1000
Fig.5 Static Drain-Source On-State Resistance vs. Drain Current
1000
VGS=4V
pulsed
VGS=4.5V
pulsed
Ta= 125℃
Ta= 75°C
Ta= 25°C
Ta= - 25°C
Ta= 125℃
Ta= 75°C
Ta= 25°C
Ta= - 25°C
100
10
1
100
10
1
0.01
0.1
1
10
0.01
0.1
1
10
Drain Current : ID [A]
Drain Current : ID [A]
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© 2011 ROHM Co., Ltd. All rights reserved.
4/10
2011.05 - Rev.A
Data Sheet
QS8M13
ꢀ
Fig.8 Typical Transfer Characteristics
Fig.7 Forward Transfer Admittance vs. Drain Current
10
1
10
VDS=10V
pulsed
VDS=10V
pulsed
Ta= 125℃
Ta= 75°C
1
Ta= 25°C
Ta= - 25°C
Ta= 125℃
Ta= 75°C
Ta= 25°C
Ta= - 25°C
0.1
0.1
0.01
0.001
0.01
0.001
0.01
0.1
Drain Current : ID [A]
1
10
2.0
10
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Gate-Source Voltage : VGS [V]
Fig.10 Static Drain-Source On-State Resistance vs. Gate-Source Voltage
100
Fig.9 Source Current vs. Source-Drain Voltage
10
VGS=0V
pulsed
Ta=25℃
Pulsed
80
ID=3.0A
Ta= 125℃
Ta= 75°C
Ta= 25°C
Ta= - 25°C
1
ID=6.0A
60
40
20
0
0.1
0.01
0
2
4
6
8
10
0.0
0.5
1.0
1.5
Gate-Source Voltage : VGS [V]
Source-Drain Voltage : VSD [V]
Fig.11 Switching Characteristics
Fig.12 Dynamic Input Characteristics
1000
100
10
10
8
V
DD≒15V
Ta=25°C
VDD=15V
ID=6A
VGS=10V
RG=10Ω
Ta=25°C
Pulsed
Pulsed
tf
td(off)
6
4
2
td(on)
tr
1
0
0.01
0.1
1
0
2
4
6
8
10
Drain Current : ID [A]
Total Gate Charge : Qg [nC]
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© 2011 ROHM Co., Ltd. All rights reserved.
5/10
2011.05 - Rev.A
Data Sheet
QS8M13
ꢀ
Fig.13 Typical Capacitance vs. Drain-Source Voltage
Fig.14 Maximum Safe Operating Area
10000
1000
100
100
10
Ta=25°C
f=1MHz
VGS=0V
Operation in this area is limited by RDS(on)
(VGS = 10V)
PW = 100μs
Ciss
1
PW = 1ms
PW = 10ms
Coss
Crss
0.1
0.01
Ta=25°C
Single Pulse : 1Unit
Mounted on a ceramic board.
(30mm × 30mm × 0.8mm)
DC Operation
100
10
0.01
0.1
1
10
100
0.1
1
10
Drain-Source Voltage : VDS [ V ]
Drain-Source Voltage : VDS [V]
Fig.15 Normalized Transient Thermal Resistance v.s. Pulse Width
10
Ta=25°C
Single Pulse : 1Unit
1
0.1
0.01
Mounted on a ceramic board.
（30mm × 30mm × 0.8mm)
Rth(ch-a)=100°C/W
Rth(ch-a)(t)=r(t)×Rth(ch-a)
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse width : Pw (s)
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© 2011 ROHM Co., Ltd. All rights reserved.
6/10
2011.05 - Rev.A
Data Sheet
QS8M13
ꢀ
〈Tr.2(Pch)〉
Fig.1 Typical Output Characteristics (Ⅰ)
VGS=-10.0V
Fig.2 Typical Output Characteristics (Ⅱ)
5
4
3
2
1
0
5
4
3
2
1
0
Ta=25°C
VGS=-3.0V
VGS=-2.8V
Ta=25°C
Pulsed
Pulsed
VGS=-4.5V
VGS=-4.0V
VGS=-3.0V
VGS=-10.0V
VGS=-4.5V
VGS=-4.0V
VGS=-2.8V
VGS=-2.5V
VGS=-2.5V
0
0.2
0.4
0.6
0.8
1
0
2
4
6
8
10
Drain-Source Voltage : -VDS [V]
Drain-Source Voltage : -VDS [V]
Fig.4 Static Drain-Source On-State Resistance vs. Drain Current
Fig.3 Static Drain-Source On-State Resistance vs. Drain Current
1000
1000
100
10
VGS=-10V
pulsed
Ta=25°C
Pulsed
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= - 25°C
VGS=-4.0V
VGS=-4.5V
VGS=-10V
100
10
1
1
0.01
0.1
1
10
100
0.01
0.1
1
10
100
Drain Current : -ID [A]
Drain Current : -ID [A]
Fig.6 Static Drain-Source On-State Resistance vs. Drain Current
1000
Fig.5 Static Drain-Source On-State Resistance vs. Drain Current
1000
VGS=-4.5V
pulsed
VGS=-4V
pulsed
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= - 25°C
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= - 25°C
100
10
1
100
10
1
0.01
0.1
1
10
100
0.01
0.1
1
10
100
Drain Current : -ID [A]
Drain Current : -ID [A]
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© 2011 ROHM Co., Ltd. All rights reserved.
7/10
2011.05 - Rev.A
Data Sheet
QS8M13
ꢀ
Fig.7 Forward Transfer Admittance vs. Drain Current
Fig.8 Typical Transfer Characteristics
100
10
10
1
VDS=-10V
pulsed
VDS=-10V
pulsed
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= - 25°C
1
0.1
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= - 25°C
0.1
0.01
0.01
0.001
0.01
0.1
1
10
2.0
10
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Gate-Source Voltage : -VGS [V]
Drain Current : -ID [A]
Fig.9 Source Current vs. Source-Drain Voltage
Fig.10 Static Drain-Source On-State Resistance vs. Gate-Source Voltage
100
10
VGS=0V
pulsed
Ta=25°C
Pulsed
80
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= - 25°C
ID=-2.5A
1
ID=-5.0A
60
40
20
0
0.1
0.01
0
2
4
6
8
10
0.0
0.5
1.0
1.5
Gate-Source Voltage : -VGS [V]
Source-Drain Voltage : -VSD [V]
Fig.11 Switching Characteristics
Fig.12 Dynamic Input Characteristics
1000
100
10
10
8
V
DD≒-15V
Ta=25°C
VDD=-15V
ID=-5A
VGS=-10V
RG=10Ω
Ta=25°C
Pulsed
tf
Pulsed
td(off)
6
tr
4
td(on)
2
1
0
0.01
0.1
1
0
5
10
15
20
Drain Current : -ID [A]
Total Gate Charge : Qg [nC]
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© 2011 ROHM Co., Ltd. All rights reserved.
8/10
2011.05 - Rev.A
Data Sheet
QS8M13
ꢀ
Fig.13 Typical Capacitance vs. Drain-Source Voltage
Fig.14 Maximum Safe Operating Area
10000
1000
100
100
10
Operation in this area is limited by RDS(on)
Ta=25°C
f=1MHz
VGS=0V
(VGS = -10V)
PW = 100μs
Ciss
PW = 1ms
1
Coss
PW = 10ms
Crss
0.1
0.01
Ta=25°C
Single Pulse : 1Unit
Mounted on a ceramic board.
(30mm × 30mm × 0.8mm)
DC Operation
100
10
0.01
0.1
1
10
100
0.1
1
10
Drain-Source Voltage : -VDS [V]
Drain-Source Voltage : -VDS [ V ]
Fig.15 Normalized Transient Thermal Resistance v.s. Pulse Width
10
Ta=25°C
Single Pulse : 1Unit
1
0.1
0.01
Mounted on a ceramic board.
(30mm × 30mm × 0.8mm)
Rth(ch-a)=100°C/W
Rth(ch-a)(t)=r(t)×Rth(ch-a)
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse width : Pw (s)
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© 2011 ROHM Co., Ltd. All rights reserved.
9/10
2011.05 - Rev.A
Data Sheet
QS8M13
ꢀ
Measurement circuits
<Tr1(Nch)>
Pulse width
90%
VGS
ID
VDS
50%
10%
50%
V
GS
DS
R
L
V
10%
10%
90%
D.U.T.
V
DD
RG
90%
t
d(on)
td(off)
t
r
tf
t
on
toff
Fig.1-2ꢀSwitching Waveforms
Fig.1-1 Switching Time Measurement Circuit
V
G
V
GS
I
D
VDS
Q
g
RL
V
GS
D.U.T.
I
G(Const.)
Q
gs
Qgd
VDD
Charge
Fig.2-2 Gate Charge Waveform
Fig.2-1 Gate Charge Measurement Circuit
<Tr2(Pch)>
Pulse Width
V
GS
ID
V
GS
10%
50%
V
DS
50%
90%
RL
D.U.T.
10%
90%
10%
90%
RG
V
DD
V
DS td(on)
td(off)
t
r
tf
t
on
toff
Fig.1-2ꢀSwitching Waveforms
Fig.1-1 Switching Time Measurement Circuit
V
G
I
D
VDS
Q
g
V
GS
RL
V
GS
D.U.T.
I
G(Const.)
Q
gs
Qgd
VDD
Charge
Fig.2-1 Gate Charge Measurement Circuit
Fig.2-2 Gate Charge Waveform
Notice
This product might cause chip aging and breakdown under the large electrified environment. Please consider to design
ESD protection circuit.
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© 2011 ROHM Co., Ltd. All rights reserved.
10/10
2011.05 - Rev.A
Notice
N o t e s
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact us.
ROHM Customer Support System
http://www.rohm.com/contact/
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© 2011 ROHM Co., Ltd. All rights reserved.
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