QS8M51HZG [ROHM]
QS8M51HZG是非常适用于开关应用的MOSFET。是符合AEC-Q101标准的车载级高可靠性产品。;型号: | QS8M51HZG |
厂家: | ROHM |
描述: | QS8M51HZG是非常适用于开关应用的MOSFET。是符合AEC-Q101标准的车载级高可靠性产品。 开关 |
文件: | 总22页 (文件大小:2374K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
QS8M51HZG
Datasheet
ꢀꢀ100V Nch + Pch Small Signal MOSFET
ꢀꢀ
llOutline
ꢀ
Tr1:Nch Tr2:Pch
100V -100V
325mΩ 470mΩ
Symbol
VDSS
RDS(on)(Max.)
TSMT8
ꢀ
ID
±2A
±1.5A
ꢀ
PD
1.5W
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
llFeatures
1) Low on - resistance
llInner circuit
2) Small Surface Mount Package (TSMT8)
3) Pb-free lead plating ; RoHS compliant
4) AEC-Q101 Qualified
ckaging specifications
Embossed
Tape
Packing
llApplication
Reel size (mm)
180
8
Switching
Tape width (mm)
Type
Basic ordering unit (pcs)
Taping code
3000
TR
Marking
M51
llAbsolute maximum ratins (T = 25°C ,unless otherwise specified)
a
Value
Tr1:Nch Tr2:Pch
rameter
Drain - Source
Symbol
Unit
VDSS
ID
100
±2
-100
±1.5
±6
V
A
A
V
Continuoudrain urrent
Pused ain current
*1
IDP
±6
VGSS
Gate Source voltage
±20
±20
*2
PD
1.5
1.1
Pr dissipation
total
W
*3
PD
Tj
Junction temperature
150
℃
℃
Tstg
Operating junction and storage temperature range
-55 to +150
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© 2018 ROHMCo., Ltd. All rights reserved.
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1/19
20180827 - Rev.001
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QS8M51HZG
Datasheet
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llThermal resistance
Values
Parameter
Symbol
Unit
Min. Typ. Max.
*2
RthJA
-
-
-
-
83.3
113
Thermal resistance, junction - ambient
total
℃/W
*3
RthJA
llElectrical characteristics (Ta = 25°C)
Values
Parameter
Symbol Type
Conditions
= 0V, I = 1mA
Unit
V
Min. Typ. Max.
V
Tr1
100
-
-
-
GS
D
Drain - Source breakdown
voltage
V(BR)DSS
Tr2 V = 0V, I = -1mA
-100
-
GS
D
ΔV
I = 1mA, referenced to 25℃
ꢀ
(BR)DSSꢀ Tr1
ΔT
-
1.9
-
D
Breakdown voltage
temperature coefficient
mV/℃
μA
I = -1mA, referenced to 25℃
D
ꢀ
ꢀ
ꢀ
j ꢀ Tr2
-
-91.3
-
Tr1 V = 100V, V = 0V
-
1
DS
GS
Zero gate voltage
drain current
IDSS
Tr2 V = -100V, V
-
-1
±10
±10
2.5
-2.5
-
DS
GS
Tr1 V = ±20V,
-
-
-
GS
S
Gate - Source
leakage current
IGSS
μA
Tr2 V = ±20V, V = 0V
-
GS
DS
Tr1 V = 1I = 1mA
1.0
-
DS
D
Gate threshold
voltage
VGS(th)
ΔV
V
Tr2 V -10V, I = -1mA
-1.0
-
DS
D
I = 1m, referenced to 25℃
D
ꢀ
ꢀ Tr1
-
-3.6
3.0
GS(th)
Gate threshold voltage
temperature coefficient
mV/℃
ΔT
I -1mA, referenced to 25℃
D
ꢀ
ꢀ
ꢀ
ꢀ
T
-
-
j
V
= 10V, I = 2A
-
240 325
250 340
260 355
350 470
380 510
400 540
GS
D
r1 V = 4.5V, I = 2A
-
GS
GS
GS
D
V
V
= 4.0V, I = 2A
-
D
Static drain - source
on - state resistance
*4
RDS(on)
mΩ
= -10V, I = -1.5A
-
-
D
Tr2 V = -4.5V, I = -0.75A
GS
GS
D
V
= -4.0V, I = -0.75A
-
D
Tr1
Tr2
-
8.5
8.2
-
-
-
-
-
RG
Gate resistanc
f=1MHz, open drain
Ω
S
-
Tr1 V = 10V, I = 2A
1.9
1.5
DS
D
Fward ansfer
Admance
|Y |*4
fs
V
DS
= -10V, I = -1.5A
Tr2
-
D
*≤ 10μs, Duty cycle ≤ 1%
*2 Mounted on a ceramic board (30×30×0.8mm)
*3 Mounted on a FR4 (25×25×0.8mm)
*4 Pulsed
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© 2018 ROHMCo., Ltd. All rights reserved.
2/19
20180827 - Rev.001
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QS8M51HZG
Datasheet
llElectrical characteristics (Ta = 25°C)
<Tr1>
Values
Parameter
Symbol
Conditions
= 0V
Unit
Min.
Typ. Max.
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn - on delay time
Rise time
V
V
-
-
-
-
-
-
-
290
30
20
10
10
30
1
-
-
-
-
-
-
-
GS
= 25V
pF
ns
DS
f = 1MHz
*4
V
DD
⋍ 50V, V = 10V
GS
td(on)
tr*4
I = 1A
D
*4
td(off)
R = 50Ω
Turn - off delay time
Fall time
L
tf*4
R = 10Ω
G
<Tr2>
Values
Parameter
Symbol
Conditions
= 0V
Unit
pF
Min.
Typ. Max.
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn - on delay time
Rise time
V
V
-
-
-
-
-
-
-
950
45
20
10
15
60
10
-
-
-
-
-
-
-
GS
= -25V
DS
f = 1z
*4
V
DD
-5V, V = -10V
GS
td(on
= -075A
ns
*4
td(off)
R = 66Ω
Turn - off delay time
Fall time
L
tf*4
R = 10Ω
G
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www.rohm.com
© 2018 ROHMCo., Ltd. All rights reserved.
3/19
20180827 - Rev.001
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QS8M51HZG
Datasheet
llGate charge characteristics (Ta = 25°C)
<Tr1>
Values
Parameter
Symbol
Conditions
Unit
Min.
Typ. Max.
*4
Qg
Total gate charge
-
-
-
4.7
1.2
1.8
-
-
-
V
V
⋍ 50V, I = 2A
= 5V
DD
D
*4
Qgs
Gate - Source charge
Gate - Drain charge
nC
GS
*4
Qgd
<Tr2>
Valu
Parameter
Symbol
Conditions
Unit
nC
Min.
p. Max.
*4
Qg
Total gate charge
-
-
-
17.0
4.5
-
-
-
V
V
⋍ -50V, I = -1.5A
DD
D
*4
Qgs
Gate - Source charge
Gate - Drain charge
= -5V
GS
*4
Qgd
5.0
llBody diode electrical characteristics (Source-DraiTa 25°C)
<Tr1>
Values
Parameter
Symbol
Conditions
Unit
Min.
Typ. Max.
Continuous forward current
Pulse forward current
Forward voltage
-
-
-
-
-
-
1.0
6
T = 25℃
A
V
a
ISP
*4
VSD
V
GS
= 0V, I = 2A
1.2
S
<Tr2>
Values
Par
Symbol
IS
Conditions
Unit
Min.
Typ. Max.
Continus forward current
Pulse rward current
Frd voltage
-
-
-
-
-
-
-1.0
-6
T = 25℃
A
V
a
*1
ISP
*4
VSD
V
GS
= 0V, I = -0.75A
S
-1.2
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www.rohm.com
© 2018 ROHMCo., Ltd. All rights reserved.
4/19
20180827 - Rev.001
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QS8M51HZG
Datasheet
llElectrical characteristic curves <Tr1>
Fig.1 Power Dissipation Derating Curve
Fig.2 Maximum Safe Operating Area
Fig.3 Normalized Transient Therm
Fig.4 Single Pulse Maximum Power
ꢀꢀꢀꢀResistance vs. Pulsth
ꢀꢀꢀꢀdissipation
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www.rohm.com
© 2018 ROHMCo., Ltd. All rights reserved.
5/19
20180827 - Rev.001
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QS8M51HZG
Datasheet
llElectrical characteristic curves <Tr1>
Fig.5 Typical Output Characteristics(I)
Fig.6 Typical Output Characteristics(II)
Fig.7 Breakdown Voltage vs.
ꢀꢀꢀꢀꢀJunction Temperat
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www.rohm.com
© 2018 ROHMCo., Ltd. All rights reserved.
6/19
20180827 - Rev.001
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QS8M51HZG
Datasheet
llElectrical characteristic curves <Tr1>
Fig.8 Typical Transfer Characteristics
Fig.9 Gate Threshold Voltage vs.
ꢀꢀꢀꢀꢀJunction Temperature
Fig.10 Forward Transfer Admittanvs.
ꢀꢀꢀꢀꢀDrain Current
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www.rohm.com
© 2018 ROHMCo., Ltd. All rights reserved.
7/19
20180827 - Rev.001
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QS8M51HZG
Datasheet
llElectrical characteristic curves <Tr1>
Fig.11 Drain Current Derating Curve
Fig.12 Static Drain - Source On - State
ꢀꢀꢀResistance vs. Gate Source Voltage
Fig.13 Static Drain - Source On - e
ꢀꢀꢀResistance vs. Juncperature
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www.rohm.com
© 2018 ROHMCo., Ltd. All rights reserved.
8/19
20180827 - Rev.001
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QS8M51HZG
Datasheet
llElectrical characteristic curves <Tr1>
Fig.14 Static Drain - Source On - State
Fig.15 Static Drain - Source On - State
ꢀꢀꢀꢀꢀResistance vs. Drain Current (I)
ꢀꢀꢀꢀꢀResistance vs. Drain Current (II)
Fig.16 Static Drain - Source On - e
Fig.17 Static Drain - Source On - State
ꢀꢀꢀꢀꢀResistance vs. Drent (IlI)
ꢀꢀꢀꢀꢀResistance vs. Drain Current (IV)
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www.rohm.com
© 2018 ROHMCo., Ltd. All rights reserved.
9/19
20180827 - Rev.001
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QS8M51HZG
Datasheet
llElectrical characteristic curves <Tr1>
Fig.18 Typical Capacitance vs.
Fig.19 Switching Characteristics
ꢀꢀꢀꢀꢀꢀDrain - Source Voltage
Fig.20 Dynamic Input Characteris
Fig.21 Source Current vs.
ꢀꢀꢀꢀꢀꢀSource Drain Voltage
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www.rohm.com
© 2018 ROHMCo., Ltd. All rights reserved.
10/19
20180827 - Rev.001
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QS8M51HZG
Datasheet
llElectrical characteristic curves <Tr2>
Fig.1 Power Dissipation Derating Curve
Fig.2 Maximum Safe Operating Area
Fig.3 Normalized Transient Therm
Fig.4 Single Pulse Maximum Power
ꢀꢀꢀꢀꢀResistance vs. Puidth
ꢀꢀꢀꢀꢀdissipation
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www.rohm.com
© 2018 ROHMCo., Ltd. All rights reserved.
11/19
20180827 - Rev.001
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QS8M51HZG
Datasheet
llElectrical characteristic curves <Tr2>
Fig.5 Typical Output Characteristics(I)
Fig.6 Typical Output Characteristics(II)
Fig.7 Breakdown Voltage vs.
ꢀꢀꢀꢀꢀꢀJunction Temper
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www.rohm.com
© 2018 ROHMCo., Ltd. All rights reserved.
12/19
20180827 - Rev.001
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QS8M51HZG
Datasheet
llElectrical characteristic curves <Tr2>
Fig.8 Typical Transfer Characteristics
Fig.9 Gate Threshold Voltage vs.
ꢀꢀꢀꢀꢀJunction Temperature
Fig.10 Forward Transfer Admittanvs.
ꢀꢀꢀꢀꢀDrain Current
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www.rohm.com
© 2018 ROHMCo., Ltd. All rights reserved.
13/19
20180827 - Rev.001
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QS8M51HZG
Datasheet
llElectrical characteristic curves <Tr2>
Fig.11 Drain Current Derating Curve
Fig.12 Static Drain - Source On - State
ꢀꢀꢀResistance vs. Gate Source Voltage
Fig.13 Static Drain - Source On - e
ꢀꢀꢀResistance vs. Juncperature
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www.rohm.com
© 2018 ROHMCo., Ltd. All rights reserved.
14/19
20180827 - Rev.001
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QS8M51HZG
Datasheet
llElectrical characteristic curves <Tr2>
Fig.14 Static Drain - Source On - State
Fig.15 Static Drain - Source On - State
ꢀꢀꢀꢀꢀResistance vs. Drain Current (I)
ꢀꢀꢀꢀꢀResistance vs. Drain Current (II)
Fig.16 Static Drain - Source On - e
Fig.17 Static Drain - Source On - State
ꢀꢀꢀꢀꢀResistance vs. Drent (IlI)
ꢀꢀꢀꢀꢀResistance vs. Drain Current (IV)
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© 2018 ROHMCo., Ltd. All rights reserved.
15/19
20180827 - Rev.001
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QS8M51HZG
Datasheet
llElectrical characteristic curves <Tr2>
Fig.18 Typical Capacitance vs.
Fig.19 Switching Characteristics
ꢀꢀꢀꢀꢀꢀDrain - Source Voltage
Fig.20 Dynamic Input Characteris
Fig.21 Source Current vs.
ꢀꢀꢀꢀꢀꢀSource Drain Voltage
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© 2018 ROHMCo., Ltd. All rights reserved.
16/19
20180827 - Rev.001
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QS8M51HZG
Datasheet
llMeasurement circuits <Tr1>
Fig.1-1 Switching Time Measurement Circuit
Fig.1-2 Switching Waveforms
Fig.2-1 Gate Charge Measurement Circuit
Fig.2-2 Gate Charge Wavefo
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www.rohm.com
© 2018 ROHMCo., Ltd. All rights reserved.
17/19
20180827 - Rev.001
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QS8M51HZG
Datasheet
llMeasurement circuits <Tr2>
Fig.3-1 Switching Time Measurement Circuit
Fig.3-2 Switching Waveforms
Fig.4-1 Gate Charge Measurement Circuit
Fig.4-2 Gate Charge Waveform
llNotice
This product might cause chip breakdown under the large electrified environment.
Please consider to design ESD pion circuit.
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www.rohm.com
© 2018 ROHMCo., Ltd. All rights reserved.
18/19
20180827 - Rev.001
QS8M51HZG
ꢀ
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ꢀ ꢀ ꢀ ꢀ ꢀ
Datasheet
llDimensions
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www.rohm.com
© 2018 ROHMCo., Ltd. All rights reserved.
19/19
20180827 - Rev.001
Notice
Precaution on using ROHM Products
(Note 1)
1. If you intend to use our Products in devices requiring extremely high reliability (such as medical equipment
,
aircraft/spacecraft, nuclear power controllers, etc.) and whose malfunction or failure may cause loss of human life,
bodily injury or serious damage to property (“Specific Applications”), please consult with the ROHM sales
representative in advance. Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way
responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of any
ROHM’s Products for Specific Applications.
(Note1) Medical Equipment Classification of the Specific Applications
JAPAN
USA
EU
CHINA
CLASSⅢ
CLASSⅣ
CLASSⅡb
CLASSⅢ
CLASSⅢ
CLASSⅢ
2. ROHM designs and manufactures its Products subject to strict quality control system. Howesemiconductor
products can fail or malfunction at a certain rate. Please be sure to implement, at your own respoilits, adequate
safety measures including but not limited to fail-safe design against the physical injury, damo any property, which
a failure or malfunction of our Products may cause. The following are examples of safety msure
[a] Installation of protection circuits or other protective devices to improve system saety
[b] Installation of redundant circuits to reduce the impact of single or multiple circuilure
3. Our Products are not designed under any special or extraordinary environmennditions, as exemplified below.
Accordingly, ROHM shall not be in any way responsible or liable for any damanses or losses arising from the
use of any ROHM’s Products under any special or extraordinary environments onditions. If you intend to use our
Products under any special or extraordinary environments or conditiexelified below), your independent
verification and confirmation of product performance, reliability, ec, primust be necessary:
[a] Use of our Products in any types of liquid, including wateils, als, and organic solvents
[b] Use of our Products outdoors or in places where the Produare exposed to direct sunlight or dust
[c] Use of our Products in places where the Products arposto sea wind or corrosive gases, including Cl2,
H2S, NH3, SO2, and NO2
[d] Use of our Products in places where the Products xpsed to static electricity or electromagnetic waves
[e] Use of our Products in proximity to heat-producg coonents, plastic cords, or other flammable items
[f] Sealing or coating our Products with resin oothcoating materials
[g] Use of our Products without cleaning residue x (even if you use no-clean type fluxes, cleaning residue of
flux is recommended); or Washing our ducts by using water or water-soluble cleaning agents for cleaning
residue after soldering
[h] Use of the Products in places subjedecondensation
4. The Products are not subject to oof design.
5. Please verify and confirm characterisof the final or mounted products in using the Products.
6. In particular, if a transieoad (a large amount of load applied in a short period of time, such as pulse. is applied,
confirmation of performancharacteristics after on-board mounting is strongly recommended. Avoid applying power
exceeding normal rpow; exceeding the power rating under steady-state loading condition may negatively affect
product performand eliability.
7. De-rate PoDissipation depending on ambient temperature. When used in sealed area, confirm that it is the use in
the range s not exceed the maximum junction temperature.
8. Conthat peration temperature is within the specified range described in the product specification.
. RM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in
this cument.
ecauon for Mounting / Circuit board design
When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product
performance and reliability.
2. In principle, the reflow soldering method must be used on a surface-mount products, the flow soldering method must
be used on a through hole mount products. If the flow soldering method is preferred on a surface-mount products,
please consult with the ROHM representative in advance.
For details, please refer to ROHM Mounting specification
Notice-PAA-E
Rev.003
© 2015 ROHM Co., Ltd. All rights reserved.
Precautions Regarding Application Examples and External Circuits
1. If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the
characteristics of the Products and external components, including transient characteristics, as well as static
characteristics.
2. You agree that application notes, reference designs, and associated data and information contained in this document
are presented only as guidance for Products use. Therefore, in case you use such information, you are solely
responsible for it and you must exercise your own independent verification and judgment in the use of such information
contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses
incurred by you or third parties arising from the use of such information.
Precaution for Electrostatic
This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please troper
caution in your manufacturing process and storage so that voltage exceeding the Products maximum ratinill nbe
applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / der iron,
isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).
Precaution for Storage / Transportation
1. Product performance and soldered connections may deteriorate if the Products are stored in laces where:
[a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NSOnd NO2
[b] the temperature or humidity exceeds those recommended by ROHM
[c] the Products are exposed to direct sunshine or condensation
[d] the Products are exposed to high Electrostatic
2. Even under ROHM recommended storage condition, solderability of products ommended storage time period
may be degraded. It is strongly recommended to confirm solderability before usProducts of which storage time is
exceeding the recommended storage time period.
3. Store / transport cartons in the correct direction, which is indicaon ton with a symbol. Otherwise bent leads
may occur due to excessive stress applied when dropping of a carto
4. Use Products within the specified time after opening a humarrier bag. Baking is required before using Products of
which storage time is exceeding the recommended storage e piod.
Precaution for Product Label
A two-dimensional barcode printed on ROHM Products labfor ROHM’s internal use only.
Precaution for Disposition
When disposing Products please disposm perlusing an authorized industry waste company.
Precaution for Foreign Exchange an Trade act
Since concerned goods might be fallelisted items of export control prescribed by Foreign exchange and Foreign
trade act, please consult with ROHM in caof export.
Precaution Regarding Intelleual Property Rights
1. All information and data iding but not limited to application example contained in this document is for reference
only. ROHM does arrant that foregoing information or data will not infringe any intellectual property rights or any
other rights of and prty regarding such information or data.
2. ROHM shaot hany obligations where the claims, actions or demands arising from the combination of the
Products er articles such as components, circuits, systems or external equipment (including software).
3. No licensessly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any
thirties with respect to the Products or the information contained in this document. Provided, however, that ROHM
not sert its intellectual property rights or other rights against you or your customers to the extent necessary to
mfacture or sell products containing the Products, subject to the terms and conditions herein.
Other ecaution
1. his document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM.
2. The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written
consent of ROHM.
3. In no event shall you use in any way whatsoever the Products and the related technical information contained in the
Products or this document for any military purposes, including but not limited to, the development of mass-destruction
weapons.
4. The proper names of companies or products described in this document are trademarks or registered trademarks of
ROHM, its affiliated companies or third parties.
Notice-PAA-E
Rev.003
© 2015 ROHM Co., Ltd. All rights reserved.
Daattaasshheeeett
General Precaution
1. Before you use our Pro ducts, you are requested to care fully read this document and fully understand its contents.
ROHM shall not be in an y way responsible or liable for failure, malfunction or accident arising from the use of a ny
ROHM’s Products against warning, caution or note contained in this document.
2. All information contained in this docume nt is current as of the issuing date and subj ect to change without any prior
notice. Before purchasing or using ROHM’s Products, please confirm the la test information with a ROHM sale s
representative.
3. The information contained in this doc ument is provi ded on an “as is” basis and ROHM does not warrant tat all
information contained in this document is accurate an d/or error-free. ROHM shall not be in an y way responsior
liable for any damages, expenses or losses incurred by you or third parties resulting from inaccuracy or errors of
concerning such information.
Notice – WE
Rev.001
© 2015 ROHM Co., Ltd. All rights reserved.
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